CN114744084A - Preparation method of quantum dot film, quantum dot film and display device - Google Patents
Preparation method of quantum dot film, quantum dot film and display device Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
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- 238000005538 encapsulation Methods 0.000 claims abstract description 19
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- 238000005224 laser annealing Methods 0.000 claims description 5
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- H01L33/005—Processes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
The application provides a preparation method of a quantum dot film, the quantum dot film and a display device, comprising the following steps: providing a first substrate, and preparing a base layer on the first substrate; preparing a plurality of quantum dot units on a substrate layer; peeling each quantum dot unit from the substrate layer; providing a color film substrate, wherein a plurality of light emitting areas are arranged on the color film substrate, and each quantum dot unit is transferred into the corresponding light emitting area; and preparing an encapsulation layer. According to the method, the plurality of quantum dot units are prepared on the base layer, and are transferred to the plurality of light emitting areas of the color film substrate. Compared with a photoresist mode, the quantum dot has high utilization rate, and the phenomenon that the quantum dot is developed to cause a large amount of waste is avoided; compared with an ink-jet printing mode, the preparation of the quantum dot film is not influenced by the size and the precision of a printer. Therefore, the quantum dot film prepared by the preparation method of the quantum dot film has low cost and unlimited size; the display device using the quantum dot film has low production cost.
Description
Technical Field
The application belongs to the technical field of display, and particularly relates to a preparation method of a quantum dot film, the quantum dot film and a display device.
Background
The quantum dot display gradually becomes the mainstream direction of the next generation of novel display innovation technology due to the advantages of high color saturation, performance advantages and the like.
At present, the full color of the display device is mainly realized by a combination of a blue-emitting Diode (LED) and a patterned quantum dot layer. The quantum dot layer is mainly prepared by a photoresist mode or an ink-jet printing mode. However, in the photoresist method, more than 80% of the quantum dots are developed, which causes a great amount of waste of the quantum dots and high cost; in the inkjet printing method, the requirements for preparing a quantum dot layer with high resolution and large size cannot be satisfied due to the influence of the size and precision of the printer.
Disclosure of Invention
An object of the embodiments of the present application is to provide a method for preparing a quantum dot film, and a display device, so as to solve the problems existing in the related art: the quantum dot layer has high preparation cost and limited size.
In order to achieve the above purpose, the embodiment of the present application adopts the following technical solutions:
in one aspect, a method for preparing a quantum dot film is provided, which includes:
providing a first substrate, and preparing a base layer on the first substrate;
preparing a plurality of quantum dot units on the base layer;
peeling each quantum dot unit from the base layer;
providing a color film substrate, wherein a plurality of light emitting areas are arranged on the color film substrate, and each quantum dot unit stripped from the substrate layer is transferred into the corresponding light emitting area;
preparing an encapsulation layer to encapsulate a plurality of the quantum dot units.
In one embodiment, the preparing a plurality of quantum dot units on the base layer comprises:
preparing a quantum dot layer on the substrate layer;
and photoetching the quantum dot layer to obtain a plurality of quantum dot units.
According to the structure, the quantum dot layer is divided into the plurality of quantum dot units through the photoetching process, so that each quantum dot unit can be conveniently transferred subsequently, waste is reduced, and cost is reduced.
In one embodiment, in the peeling each of the quantum dot units from the base layer: and laser annealing the side of the first substrate, which is far away from the base layer, so that each quantum dot unit is stripped from the base layer.
The structure can improve the peeling efficiency between each quantum dot unit and the substrate layer through laser annealing, and can also improve the quality of each quantum dot unit.
In one embodiment, the plurality of quantum dot units comprise a plurality of red quantum dots and a plurality of green quantum dots, the plurality of light-emitting areas comprise a plurality of red light-emitting areas, a plurality of green light-emitting areas and a plurality of blue light-emitting areas, the plurality of red quantum dots are respectively installed in the plurality of red light-emitting areas, and the plurality of green quantum dots are respectively installed in the plurality of green light-emitting areas.
According to the structure, the red light emitting areas can be used for positioning and installing the red quantum dots, and the green light emitting areas can be used for positioning and installing the green quantum dots.
In one embodiment, the color film substrate comprises a bottom plate and a plurality of black matrix layers which are arranged on the bottom plate at intervals, each red light emitting region is formed by spacing between two corresponding adjacent black matrix layers, each green light emitting region is formed by spacing between two corresponding adjacent black matrix layers, and each blue light emitting region is formed by spacing between two corresponding adjacent black matrix layers;
the color film substrate further comprises red light filter layers arranged in the red light emitting areas, green light filter layers arranged in the green light emitting areas and blue light filter layers arranged in the blue light emitting areas, each red quantum dot is arranged on the corresponding red light filter layer, and each green quantum dot is arranged on the corresponding green light filter layer.
In the structure, red light can pass through the red light filter layer and other color light can be blocked; the green light filter layer can allow green light to pass and block other colored light; the blue light filter layer can allow the blue light to pass and block other color light.
In one embodiment, in the step of transferring each quantum dot unit peeled off from the base layer into the corresponding light emitting region: and respectively transferring each red quantum dot to the corresponding red light filter layer, and transferring each green quantum dot to the corresponding green light filter layer.
According to the structure, the red quantum dots are transferred to the corresponding red light filter layer, and the green quantum dots are transferred to the corresponding green light filter layer, so that the traditional photoresist mode can be replaced, and a large amount of waste of the quantum dots is reduced.
In one embodiment, the encapsulation layer comprises a bottom layer that covers the plurality of quantum dot units.
This structure can guarantee through the bottom that a plurality of quantum dot units are not corroded by water oxygen to realize the protection to a plurality of quantum dot units, also can realize the fixed to a plurality of quantum dot units.
In one embodiment, the encapsulation layer further comprises a middle layer mounted on the bottom layer and a top layer mounted on the middle layer, the bottom layer and the top layer are inorganic material layers, the middle layer is an organic material layer, and the hardness of the middle layer is less than that of the top layer.
According to the structure, the packaging layer is arranged into the bottom layer, the middle layer and the top layer, so that the packaging effect of the quantum dot units can be further improved.
In another aspect, a quantum dot film is provided, which is prepared by the method for preparing a quantum dot film provided in any of the above embodiments.
In another aspect, a display device is provided, which includes a second substrate, a plurality of blue light emitting units mounted on the second substrate at intervals, and the quantum dot film, where the plurality of blue light emitting units are respectively disposed opposite to the plurality of light emitting areas.
The preparation method of the quantum dot film, the quantum dot film and the display device provided by the embodiment of the application have the following beneficial effects: according to the method, the plurality of quantum dot units are prepared on the base layer, and are transferred to the plurality of light emitting areas of the color film substrate. Compared with a photoresist mode, the quantum dot utilization rate is high, and the phenomenon that the quantum dot is developed to cause a large amount of waste is avoided; compared with an ink-jet printing mode, the preparation of the quantum dot film is not influenced by the size and the precision of a printer. Therefore, the quantum dot film prepared by the preparation method of the quantum dot film has low cost and unlimited size; the display device using the quantum dot film has low production cost.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for the embodiments or exemplary technical descriptions will be briefly introduced below, it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings may be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for preparing a quantum dot film according to an embodiment of the present disclosure;
fig. 2 is a schematic flow chart illustrating a process of preparing a plurality of quantum dot units on a substrate layer according to an embodiment of the present disclosure;
FIG. 3 is a schematic structural diagram illustrating a base layer formed on a first substrate according to an embodiment of the present disclosure;
FIG. 4 is a schematic structural diagram of an embodiment of the present application after a quantum dot layer is formed on a substrate layer;
FIG. 5 is a schematic structural diagram of a quantum dot layer that is subjected to photolithography to form a plurality of quantum dot units according to an embodiment of the present disclosure;
FIG. 6 is a schematic structural diagram of a quantum dot unit moved by a stamp in the embodiment of the present application;
fig. 7 is a schematic structural diagram of a color film substrate provided in the embodiment of the present application;
fig. 8 is a schematic structural diagram illustrating that quantum dot units are placed in corresponding light-emitting areas on a color film substrate by a stamp according to the embodiment of the present application;
fig. 9 is a schematic structural diagram illustrating that a plurality of quantum dot units are mounted on a color film substrate according to an embodiment of the present application;
fig. 10 is a schematic structural diagram of a color film substrate with an encapsulation layer according to an embodiment of the present disclosure;
fig. 11 is a schematic structural diagram of an encapsulation layer according to an embodiment of the present application;
fig. 12 is a schematic structural diagram illustrating a connection of a plurality of blue light emitting units, a second substrate and a filling layer provided in an embodiment of the present application;
fig. 13 is a schematic structural diagram of a display device according to an embodiment of the present application.
Wherein, in the drawings, the reference numerals are mainly as follows:
1. a first substrate; 2. a base layer;
3. a quantum dot layer; 31. a quantum dot unit; 311. red quantum dots; 312. green quantum dots;
4. a color film substrate; 41. a red light emitting region; 42. a green light emitting region; 43. a blue light emitting region; 44. a base plate; 441. a glass plate; 442. a protective layer; 45. a black matrix layer; 46. a red light filter layer; 47. a green light filter layer; 48. a blue light filter layer;
5. a packaging layer; 51. a bottom layer; 52. an intermediate layer; 53. a top layer;
6. a second substrate; 7. a blue light emitting unit; 8. a filling layer; 9. a stamp is provided.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application clearer, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise. The meaning of "a number" is one or more unless specifically limited otherwise.
In the description of the present application, it is to be understood that the terms "center", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present application and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present application.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrases "in one embodiment" or "in some embodiments" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
Referring to fig. 1 and fig. 2, a method for manufacturing a quantum dot film according to an embodiment of the present disclosure will now be described. The preparation method of the quantum dot film comprises the following steps:
s1, providing a first substrate 1, and preparing a base layer 2 on the first substrate 1. Specifically, as shown in fig. 3, the base layer 2 may be formed on the first substrate 1 by coating, and the base layer 2 may cover the top surface of the first substrate 1. Here, the top surface of the first substrate 1 may be understood as the upper surface of the first substrate 1 with the position shown in fig. 3 as a reference direction. Among them, the first substrate 1 may be made of a glass material so as to be transparent to light.
S2, preparing a plurality of quantum dot units 31 on the substrate layer 2. Specifically, as shown in fig. 2, the step S2 may include the following two steps:
s21, preparing a quantum dot layer 3 on the substrate layer 2;
s22, performing photolithography on the quantum dot layer 3 to obtain a plurality of quantum dot units 31.
First, as shown in fig. 4, the quantum dot layer 3 may be formed on the substrate layer 2 by coating, and the quantum dot layer 3 may cover the top surface of the substrate layer 2. The top side of the base layer 2 is understood here to be the upper side of the base layer 2, i.e. the side of the base layer 2 facing away from the first substrate 1.
Secondly, the photolithography process includes an exposure process, a development process and a baking process, and is sequentially performed according to the sequence of exposure, development and baking. As shown in fig. 5, the quantum dot layer 3 may be processed by a photolithography process to obtain a plurality of quantum dot units 31, and the plurality of quantum dot units 31 may be uniformly distributed on the substrate layer 2 in multiple rows and multiple columns, that is, in each displacement quantum dot unit 31: the distance between two adjacent quantum dot units 31 is equal; in each column of quantum dot units 31: the spacing between two adjacent quantum dot units 31 is also equal; moreover, the distances between two adjacent quantum dot units 31 in each row and two adjacent quantum dot units 31 in each column are also equal, and the size of each quantum dot unit 31 is also consistent, so that the subsequent transfer of each quantum dot unit 31 is facilitated, and the position accuracy of each quantum dot unit 31 is ensured.
S3, the quantum dot units 31 are separated from the base layer 2. Specifically, the side of the first substrate 1 facing away from the base layer 2 is subjected to laser annealing, so that each quantum dot unit 31 is peeled off from the base layer 2. The side of the first substrate 1 facing away from the base layer 2 may be understood as a bottom surface disposed opposite to the top surface of the first substrate 1, i.e. a lower surface disposed opposite to the upper surface of the first substrate 1. This structure can improve the peeling efficiency between each quantum dot unit 31 and the underlying layer 2 by laser annealing, and can also improve the quality of each quantum dot unit 31.
S4, providing a color filter substrate 4, wherein the color filter substrate 4 is provided with a plurality of light emitting areas, and each quantum dot unit 31 is transferred to a corresponding light emitting area. Specifically, the plurality of quantum dot units 31 include a plurality of red quantum dots 311 and a plurality of green quantum dots 312, and the preparation processes of the plurality of red quantum dots 311 and the plurality of green quantum dots 312 are the same, which is now exemplified by the preparation process of the plurality of red quantum dots 311. As shown in fig. 3 to 5, first, a base layer 2 is prepared on a first substrate 1; secondly, preparing a red quantum dot layer on the substrate layer 2; finally, the red quantum dot layer is processed by photolithography to obtain a plurality of red quantum dots 311. Similarly, the red quantum dot layer is replaced by the green quantum dot layer, and the green quantum dots 312 can be prepared by the same preparation method.
As shown in fig. 7 and 9, the plurality of light emitting regions may include a plurality of red light emitting regions 41, a plurality of green light emitting regions 42, and a plurality of blue light emitting regions 43, a plurality of red quantum dots 311 are respectively installed in the plurality of red light emitting regions 41, and a plurality of green quantum dots 312 are respectively installed in the plurality of green light emitting regions 42. Specifically, the color filter substrate 4 includes a base plate 44 and a plurality of black matrix layers 45 mounted on the base plate 44 at intervals, each red light-emitting region 41 is formed by spacing two corresponding adjacent black matrix layers 45, each green light-emitting region 42 is formed by spacing two corresponding adjacent black matrix layers 45, and each blue light-emitting region 43 is formed by spacing two corresponding adjacent black matrix layers 45. Wherein the pitch between two adjacent black matrix layers 45 is the same. The base plate 44 may include a glass plate 441 and a protective layer 442 mounted on the glass plate 441, and a plurality of black matrix layers 45 are mounted on the protective layer 442 at intervals.
Illustratively, with the four black matrix layers 45 arranged side by side to surround the resultant area as a pixel display unit area and fig. 7 as a reference position, the four black matrix layers 45 are numbered in order from left to right and are denoted as a first black matrix layer, a second black matrix layer, a third black matrix layer, and a fourth black matrix layer. The spacing region between the first black matrix layer and the second black matrix layer is defined as a red light emitting region 41, the spacing region between the second black matrix layer and the third black matrix layer is defined as a green light emitting region 42, and the spacing region between the third black matrix layer and the fourth black matrix layer is defined as a blue light emitting region 43. When there are a plurality of pixel display unit regions, the same reasoning can be performed on the plurality of light emitting regions according to the above example, and the description thereof is omitted.
As shown in fig. 7 and 9, the color filter substrate 4 further includes a red filter layer 46 installed in each red light-emitting region 41, a green filter layer 47 installed in each green light-emitting region 42, and a blue filter layer 48 installed in each blue light-emitting region 43, each red quantum dot 311 is installed on the corresponding red filter layer 46, and each green quantum dot 312 is installed on the corresponding green filter layer 47. Specifically, the depth of the space region formed between two adjacent black matrix layers 45 may be equal to the thickness of the blue light filter layer 48, that is, the blue light filter layer 48 may completely fill the space region, and the top surface of the blue light filter layer 48 may be flush with the top surface of the black matrix layer 45. The thickness of each red filter layer 46 may be equal to the thickness of each green filter layer 47, and the thickness of each red filter layer 46 is smaller than the depth of the spacing region, so that an installation space may be reserved for installation of the red quantum dots 311 and the green quantum dots 312.
As shown in fig. 6 to 8, each quantum dot unit 31 is transferred into a corresponding light emitting region, and is embodied as: the quantum dot unit 31 is drawn by the stamp 9, and then the quantum dot unit 31 is moved to above the corresponding light emitting region, and the quantum dot unit 31 is placed in the light emitting region. The transfer of red quantum dots 311 is now exemplified. The stamp 9 sucks the red quantum dots 311 on the substrate layer 2, and the number of the red quantum dots 311 sucked by the stamp 9 at one time may be one or more, which is not limited herein. Subsequently, the stamp 9 moves the red quantum dot 311 to the position above the corresponding red light emitting region 41, that is, above the corresponding red filter layer 46; finally, the stamp 9 releases the red quantum dots 311, and the red quantum dots 311 are installed in the corresponding red light emitting regions 41, that is, on the corresponding red filter layer 46. By repeating the above operations, each red quantum dot 311 can be transferred to the corresponding red filter layer 46. Similarly, the green quantum dots 312 can be transferred to the corresponding green filter layer 47 by repeating the above operations.
In one embodiment, stamp 9 may be a stamp with shape memory polymer. The bottom surface of the stamp 9 for adsorbing the quantum dot unit 31 may be provided with a convex pattern, so that the convex pattern can be matched with the pattern on the quantum dot unit 31 to improve the picking and transferring effects on the quantum dot unit 31.
Referring to fig. 7 and 9, the sum of the thickness of each red quantum dot 311 and the thickness of the corresponding red filter layer 46 is equal to the depth of the corresponding red light emitting region 41, i.e., the top surface of each red quantum dot 311 can be flush with the top surface of the black matrix layer 45. Similarly, the sum of the thickness of each green quantum dot 312 and the thickness of the corresponding green filter layer 47 is equal to the depth of the corresponding green light emitting region 42, i.e., the top surface of each green quantum dot 312 may be flush with the top surface of the black matrix layer 45.
S5, preparing an encapsulation layer 5 to encapsulate the plurality of quantum dot units 31. As shown in fig. 10, by providing the encapsulation layer 5, it is ensured that the plurality of quantum dot units 31 are not corroded by water and oxygen, so as to protect the plurality of quantum dot units 31; furthermore, the encapsulation layer 5 may also realize the fixation of the plurality of quantum dot units 31.
Specifically, the encapsulation layer 5 may be a single-layer structure, or a multi-layer structure, which is not limited herein. The embodiment of the present application provides two structures of the encapsulation layer 5 as examples, which are specifically as follows:
in one embodiment, as shown in fig. 10, the encapsulation layer 5 may include a plurality of quantum dot units 31 covered thereonThe bottom layer 51 may be evaporated on the plurality of quantum dot units 31 by a VCD (vacuum dry) method. Wherein, the bottom layer 51 can be made of inorganic material such as SiNx, SiO2SiNx and SiO2The mixed structure of (3) is not limited to the only one.
In another embodiment, as shown in fig. 11, the encapsulation layer 5 may further include a middle layer 52 mounted on the bottom layer 51 and a top layer 53 mounted on the middle layer 52, the middle layer 52 having a hardness less than the hardness of the top layer 53. In particular, the intermediate layer 52 may be made of an organic material, such as polypropylene, etc., having a certain flexibility. The top layer 53 may be of the same construction as the bottom layer 51 and may be made of the inorganic materials described above. The middle layer 52 may be coated on the top surface of the bottom layer 51, and the top layer 53 may be evaporated on the top surface of the middle layer 52 by VCD. This structure can further improve the encapsulation effect on the plurality of quantum dot units 31 by providing the encapsulation layer 5 as the bottom layer 51, the intermediate layer 52, and the top layer 53. Moreover, the intermediate layer 52 made of an organic material has a certain flexibility, so that the overall flexibility of the encapsulation layer 5 is improved, and the buffer protection of the plurality of quantum dot units 31 can be effectively realized.
Referring to fig. 10, an embodiment of the present application further provides a quantum dot film, where the quantum dot film is prepared by the method for preparing a quantum dot film provided in any of the above embodiments. The quantum dot film prepared by the preparation method of the quantum dot film has the advantages of low preparation cost, unlimited size and wide application.
Referring to fig. 12 and 13, an embodiment of the present application further provides a display device, which includes a second substrate 6, a plurality of blue light emitting units 7 mounted on the second substrate 6 at intervals, and the quantum dot film, where the plurality of blue light emitting units 7 are respectively disposed opposite to the plurality of light emitting regions. Specifically, the number of the plurality of blue light emitting units 7 may be kept in agreement with the number of the plurality of light emitting areas. After the preparation of the quantum dot film is finished, the quantum dot film is turned over by 180 degrees and then is combined with the second substrate 6 with the plurality of blue light emitting units 7; or, the second substrate 6 with the plurality of blue light emitting units 7 is turned over by 180 degrees and then paired with the quantum dot film.
When the blue light emitted by each blue light emitting unit 7 passes through the package layer 5 and enters the corresponding red light emitting region 41, the blue light can excite the corresponding red quantum dot 311 and generate red light, and the red light filter layer 46 can allow the red light to pass through and block the un-excited blue light or other stray light. Similarly, when the blue light emitted by each blue light emitting unit 7 passes through the encapsulation layer 5 and is emitted into the corresponding green light emitting region 42, the blue light can excite the corresponding green quantum dot 312 and generate green light, and the green light filter layer 47 can allow the green light to pass through and block the green light that is not excited or other stray light. When the blue light emitted from each blue light emitting unit 7 passes through the encapsulation layer 5 and is emitted into the corresponding blue light emitting region 43, the blue light filter layer 48 can allow the blue light to pass through and block other stray light.
In one embodiment, referring to fig. 12, a filling layer 8 is disposed between two adjacent blue light emitting units 7, and the filling layer 8 can improve the mounting stability of each blue light emitting unit 7 on the second substrate 6.
In the quantum dot film manufacturing method, the quantum dot film and the display device provided in the embodiment of the present application, the plurality of quantum dot units 31 are manufactured on the base layer 2, and the plurality of quantum dot units 31 are transferred to the plurality of light emitting regions of the color film substrate 4. Compared with a photoresist mode, the quantum dot has high utilization rate, and the phenomenon that the quantum dot is developed to cause a large amount of waste is avoided; compared with an ink-jet printing mode, the preparation of the quantum dot film is not influenced by the size and the precision of a printer. Therefore, the quantum dot film prepared by the preparation method of the quantum dot film has low cost and unlimited size; the display device using the quantum dot film has low production cost.
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. A preparation method of a quantum dot film is characterized by comprising the following steps:
providing a first substrate, and preparing a base layer on the first substrate;
preparing a plurality of quantum dot units on the base layer;
peeling off each quantum dot unit from the base layer;
providing a color film substrate, wherein a plurality of light emitting areas are arranged on the color film substrate, and each quantum dot unit stripped from the substrate layer is transferred into the corresponding light emitting area;
preparing an encapsulation layer to encapsulate a plurality of the quantum dot units.
2. The method of preparing a quantum dot film according to claim 1, wherein the preparing a plurality of quantum dot units on the base layer comprises:
preparing a quantum dot layer on the substrate layer;
and photoetching the quantum dot layer to obtain a plurality of quantum dot units.
3. The method of claim 1, wherein in the peeling each quantum dot unit from the base layer: and laser annealing the side of the first substrate, which is far away from the base layer, so that each quantum dot unit is stripped from the base layer.
4. The method of preparing a quantum dot film according to claim 1, wherein: the quantum dot units comprise a plurality of red quantum dots and a plurality of green quantum dots, the light-emitting areas comprise a plurality of red light-emitting areas, a plurality of green light-emitting areas and a plurality of blue light-emitting areas, the red quantum dots are respectively arranged in the red light-emitting areas, and the green quantum dots are respectively arranged in the green light-emitting areas.
5. The method of preparing a quantum dot film according to claim 4, wherein: the color film substrate comprises a bottom plate and a plurality of black matrix layers which are arranged on the bottom plate at intervals, each red light emitting area is formed by spacing between two corresponding adjacent black matrix layers, each green light emitting area is formed by spacing between two corresponding adjacent black matrix layers, and each blue light emitting area is formed by spacing between two corresponding adjacent black matrix layers;
the color film substrate further comprises red light filter layers arranged in the red light emitting areas, green light filter layers arranged in the green light emitting areas and blue light filter layers arranged in the blue light emitting areas, each red quantum dot is arranged on the corresponding red light filter layer, and each green quantum dot is arranged on the corresponding green light filter layer.
6. The method for manufacturing a quantum dot film according to claim 5, wherein in the step of transferring each of the quantum dot units peeled off from the base layer into the corresponding light emitting region: and respectively transferring each red quantum dot to the corresponding red light filter layer, and transferring each green quantum dot to the corresponding green light filter layer.
7. The method of any one of claims 1 to 6, wherein: the packaging layer comprises a bottom layer covering the plurality of quantum dot units.
8. The method of preparing a quantum dot film according to claim 7, wherein: the packaging layer further comprises a middle layer and a top layer, the middle layer is mounted on the bottom layer, the top layer is mounted on the middle layer, the bottom layer and the top layer are inorganic material layers, the middle layer is an organic material layer, and the hardness of the middle layer is smaller than that of the top layer.
9. A quantum dot film, comprising: the quantum dot film according to any one of claims 1 to 8.
10. A display device, characterized in that: the quantum dot film comprises a second substrate, a plurality of blue light emitting units and the quantum dot film, wherein the plurality of blue light emitting units are arranged on the second substrate at intervals, and the quantum dot film is as claimed in claim 9.
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Application publication date: 20220712 |