CN114744058B - 一种二硒化钨太阳能电池 - Google Patents
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Abstract
本发明属于新能源光伏器件技术领域，涉及一种太阳能电池，特别是一种以二硒化钨为导电层的栅控太阳能电池。该二硒化钨太阳能电池包括基底、二硒化钨、顶栅介质层、顶栅电极、源电极和漏电极，二硒化钨位于顶栅介质层和基底之间，源电极和漏电极位于二硒化钨两端。该二硒化钨光伏电池基底由单晶硅层和二氧化硅层构成，采用有明显厚度差的六方氮化硼作为顶栅介质层，以透明石墨烯作为顶栅电极。本发明所采用的静电掺杂技术较现有静电掺杂技术更简单方便；采用静电掺杂所形成的同质结可以使结型光伏电池引入更少缺陷态，提高电池性能；利用二硒化钨作为导电层，其二维状态下的高柔性使得可穿戴柔性太阳能电池成为可能，有利于改善环境与能源问题。
Description
技术领域
本发明属于新能源光伏器件技术领域，涉及一种基于二维材料的太阳能电池，尤其涉及一种以二硒化钨为导电层的栅极控制太阳能电池以及静电掺杂同质结产生光伏效应的创新方法。
背景技术
近年来，全球人口的急剧增长和现代工业的快速扩张加速了能源的消耗。据估计，超过 80% 的能源来自石油、煤和天然气等化石燃料。太阳能、风能、水电、生物质能、生物燃料和地热能等可再生能源因为其可持续性、低污染、大储量等特点，已被用于替代传统化石燃料。与其他清洁和可再生能源相比，太阳能因其丰富储量成为迄今为止最有前途的能源。
现有的太阳能电池种类繁多，主要的有硅太阳能电池、钙钛矿太阳能电池和染料敏化太阳能电池等。非晶硅太阳能电池工作原理基于半导体的光伏效应，电池吸收太阳光产生光生电子-空穴对，电子、空穴在内建电场的作用下分别漂移到两侧积累形成光生电动势，在外电路接通时产生光电流。其原材料和制造工艺成本低，适于大批量生产，弱光响应好，但寿命短，稳定性差，光电转化效率低。钙钛矿太阳能电池利用电池中的钙钛矿层吸收光子产生电子-空穴对，挣脱束缚的自由电子从钙钛矿层传输到等电子传输层后被FTO导电玻璃收集，空穴从钙钛矿层传输到空穴传输层后被金属电极收集，通过连接FTO和金属电极的电路产生光电流。其具有高转换效率、能进行可柔性制备，但电池稳定性差，吸收层中含有可溶性重金属Pb，且现有方法难以实现大面积、连续的钙钛矿薄膜的沉积。染料敏化太阳能电池模拟自然界中的“光合作用”，通过光照激发染料分子向外电路提供电子，再通过电池内部的电解质将染料分子还原再生，氧化态的电解质接受电极上的电子后被还原从而实现循环。它的制备成本低、工艺技术相对简单，无毒无污染，但光电转化效率相对于一般太阳能电池而言较低，电池稳定性较差。研发性价比高、稳定性强、对环境污染小的太阳能电池显得十分重要。
过渡金属二硫属化物因其强的光-物质相互作用特性、可见/近红外光谱范围内的可调带隙和相对较高的迁移率在光伏器件领域备受关注。二维状态下的过渡金属二硫化物的高柔性为柔性太阳能电池提供了新可能。基于MoS2、WSe2等过渡金属二硫化物设计的结型太阳能电池与其他多结太阳能电池相比，展示出了更高的光电转换效率和更低的成本。构建异质结太阳能电池，异质结的搭建会有晶格失配，产生位错等缺陷，从而捕获载流子，使得导电能力下降。单个过渡金属二硫化物掺杂得到同质结可以很好地避免搭建异质结所引入的缺陷态，且同质结连续的能带弯曲有利于载流子分离以及电荷转移。典型的同质结掺杂多为化学掺杂，过渡掺杂会引入大量的复合中心，促进载流子复合，从而减少载流子寿命，使太阳能电池性能下降。
二硒化钨作为过渡金属二硫化物中的一种，具有极低的热传导率和较高的光吸收率等优越性能。以前的研究采用了局部静电掺杂的方法首次开发出了基于二硒化钨制的二极管，根据实验显示，这种材料可被用于超薄的软性太阳能电池。该二极管结构如图1所示，包括基底材料1、左栅电极2、右栅电极3、栅介质材料4、二硒化钨5、源电极6和漏电极7。该二极管采用沟道宽度为460 nm的横向双栅结构，基底由单晶Si层和SiO2层构成，采用Si3N4作为栅介质材料，采用Pd/Au作为源电极，Ti/Au作为漏电极。该文献中的二硒化钨是通过机械剥离法得到的。沟道的获得通过标准电子束光刻，短沟道的制作成本高，获得更小尺寸沟道操作难度大，难以满足工业技术需求。
发明内容
本发明的目的就是要克服现有技术的缺点，得到一种以二硒化钨为导电层的栅极调控太阳能电池，所提供的二硒化钨太阳能电池极具成为柔性太阳能电池的潜力，相较于现有的太阳能电池，具有更长的寿命、更高的稳定性；比现有二硒化钨太阳能电池操作更简便、成本更低，具有更高的研发性价比。
本发明提供的二硒化钨太阳能电池，如图2所示，包括基底材料1、二硒化钨2、顶栅介质材料3、顶栅电极4、源电极5和漏电极6，二硒化钨导电层2位于基底材料1表面，源电极5和漏电极6位于二硒化钨2两端；该太阳能电池还包括顶栅介质材料3和顶栅电极4，顶栅介质材料3位于二硒化钨2上方并覆盖二硒化钨2、源电极5和漏电极6，顶栅电极4位于顶栅介质材料上方作为顶部。
本发明采用的技术手段是，对现有的局部栅极控制的二硒化钨太阳能电池，采用具有厚度差的栅介质层和透明顶栅电极，以取代含沟道的局部栅极。恰当地选择栅压的方向和大小，能使同一块二硒化钨产生不同类型的掺杂，形成p-n结。所以，本发明采用的含厚度差的栅介质层将起到绝缘和同时产生不同类型掺杂的双重作用。
本发明采用的顶栅介质材料为透明六方氮化硼，顶栅电极为透明石墨烯，使得顶栅电极和顶栅介质材料尽可能小地对光照射造成阻碍，增加二硒化钨导电层对光的吸收量。
实施本发明使现有的二硒化钨太阳能电池的制备过程更简便，使成本下降，由于制作沟道需要使用到光刻机进行光刻，而本发明采用的方法回避了纳米级别沟道的制作，能简化器件制备步骤，极大降低制作的成本。
将以上综合起来，本发明提供了一种以二硒化钨为导电层材料的栅控太阳能电池；该太阳能电池是对现有的局部栅极控制的二硒化钨太阳能电池，采用具有厚度差的栅介质层和透明顶栅电极，以取代含沟道的局部栅极，通过调节栅压来形成p-n结。实施本发明使得二硒化钨太阳能电池的制备过程更简便，成本更低；能对现有的太阳能电池在寿命、稳定性、经济性和可柔性等发面进行提升改进。
附图说明
附图仅用于示出具体实施例的目的，而并不认为是对本发明的限制，在整个附图中，相同的参考符号表示相同的部件。
图1为现有的局部栅极控制的二硒化钨太阳能电池结构示意图。其中1是基底材料，2是左栅电极，3是右栅电极，4是栅介质材料，5是二硒化钨，6是源电极，7是漏电极。
图2为本发明提供的二硒化钨太阳能电池的结构示意图。其中1为基底材料，2是硒化钨，3是顶栅介质材料，4是顶栅电极，5是源电极，6是漏电极。
具体实施方式
下面结合附图来具体描述本发明的优选实施例，其中，附图构成本发明一部分，并与本发明的实施例一起用于阐释本发明的原理，并非用于限定本发明的范围。
实施例1
器件结构如前所述，其中二硒化钨2厚度为15 nm，顶栅介质材料3采用薄区厚度为5 nm、厚区厚度为100 nm（厚度差95 nm）的h-BN，顶栅电极4采用厚度为5 nm的透明石墨烯。在栅极偏压为-3 V时，开路电压值Voc为0.39V，短路电流Isc为0.1 nA。
Claims (4)
1.一种二硒化钨太阳能电池，包括基底材料（1）、二硒化钨（2）、顶栅介质材料（3）、顶栅电极（4）、源电极（5）和漏电极（6），二硒化钨导电层（2）位于基底材料（1）表面，源电极（5）和漏电极（6）位于二硒化钨（2）两端；其特征在于，太阳能电池还包括顶栅介质材料（3）和顶栅电极（4），顶栅介质材料（3）位于二硒化钨（2）上方并覆盖二硒化钨（2）、源电极（5）和漏电极（6），顶栅电极（4）位于顶栅介质材料上方作为顶部；且所述顶栅介质材料（3）为透明绝缘材料，同一介质材料存在明显厚度差异，厚度差异区域将整个二硒化钨（2）完全覆盖，采用介电常数大于3，厚度范围5-200nm，厚薄区域的厚度相差50-200nm的六方氮化硼。
2.根据权利要求1所述的二硒化钨太阳能电池，其特征在于，所述的基底（1）为具有300nm厚SiO2层的Si片。
3.根据权利要求1所述的二硒化钨太阳能电池，其特征在于，二硒化钨（2）采用厚度5-50nm的单晶WSe2。
4.根据权利要求1所述的二硒化钨太阳能电池，其特征在于，顶栅电极（4）为透明导电材料，在竖直方向上将二硒化钨（2）覆盖，顶栅电极（4）和二硒化钨（2）通过顶栅介质材料（3）隔开，采用厚度范围为0.3-10nm的石墨烯。
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| WO2018185257A1 (en) * | 2017-04-05 | 2018-10-11 | The Provost, Fellows, Scholars And Other Members Of Board Of Trinity College Dublin | A multi-layer device and method of making same |
| CN109817757A (zh) * | 2019-01-18 | 2019-05-28 | 中国空间技术研究院 | 一种二硒化钨薄片/氧化锌纳米带结型场效应晶体管光电探测器及其制备方法 |
| CN111245416A (zh) * | 2020-01-17 | 2020-06-05 | 北京科技大学 | 一种二维水平同质结、自驱动逻辑光电开关及其制备方法 |
| WO2020130935A1 (en) * | 2018-12-19 | 2020-06-25 | National University Of Singapore | A semiconductor device and a method of manufacturing a semiconductor device |
| CN113782633A (zh) * | 2021-09-15 | 2021-12-10 | 湘潭大学 | 一种新型二维同质结及其制备方法 |
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| WO2018025188A1 (en) * | 2016-08-01 | 2018-02-08 | King Abdullah University Of Science And Technology | Solar cells and methods of making solar cells |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2018185257A1 (en) * | 2017-04-05 | 2018-10-11 | The Provost, Fellows, Scholars And Other Members Of Board Of Trinity College Dublin | A multi-layer device and method of making same |
| WO2020130935A1 (en) * | 2018-12-19 | 2020-06-25 | National University Of Singapore | A semiconductor device and a method of manufacturing a semiconductor device |
| CN109817757A (zh) * | 2019-01-18 | 2019-05-28 | 中国空间技术研究院 | 一种二硒化钨薄片/氧化锌纳米带结型场效应晶体管光电探测器及其制备方法 |
| CN111245416A (zh) * | 2020-01-17 | 2020-06-05 | 北京科技大学 | 一种二维水平同质结、自驱动逻辑光电开关及其制备方法 |
| CN113782633A (zh) * | 2021-09-15 | 2021-12-10 | 湘潭大学 | 一种新型二维同质结及其制备方法 |
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