CN114743923A - Wafer bearing disc and semiconductor process equipment - Google Patents
Wafer bearing disc and semiconductor process equipment Download PDFInfo
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- CN114743923A CN114743923A CN202210492267.1A CN202210492267A CN114743923A CN 114743923 A CN114743923 A CN 114743923A CN 202210492267 A CN202210492267 A CN 202210492267A CN 114743923 A CN114743923 A CN 114743923A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a wafer bearing disc which comprises a wafer tray, a lifting assembly, a bearing ring and a plurality of fingers, wherein the wafer tray is used for bearing a wafer, the bearing ring is arranged around the wafer tray, the fingers are arranged on the bearing ring and provided with a supporting part and a limiting part fixedly arranged on the supporting part, the lifting assembly is used for driving the bearing ring to drive the plurality of fingers to lift up or driving the bearing ring to drive the plurality of fingers to descend, the limiting part is provided with a guide inclined plane facing to the inner side, the diameter of a reference circle limited by the inner side of the plurality of limiting parts is larger than that of the reference circle limited by the inner side of the plurality of supporting parts, and the plurality of limiting parts are used for guiding and limiting the wafer. In the invention, the supporting parts of the fingers of the wafer bearing disc are fixedly provided with the limiting parts, and the limiting parts can guide and limit the wafer from the periphery of the wafer, so that the uniformity of wafer heating is ensured, and the safety of a semiconductor process is improved. The invention also provides semiconductor process equipment.
Description
Technical Field
The invention relates to the field of semiconductor process equipment, in particular to a wafer bearing disc and semiconductor process equipment comprising the same.
Background
The Physical Vapor Deposition (PVD) process is a process of vaporizing the surface of a material source into gaseous atoms or molecules or partially ionizing the gaseous atoms or molecules into ions by a Physical method under a vacuum condition, and depositing a film with a specific function on the surface of a substrate by a low-pressure gas or plasma process. Fig. 1 is a schematic structural diagram of a conventional metal magnetron sputtering apparatus, and a process transmission path thereof is as follows: a Wafer (Wafer) is taken out of a Wafer storage box (foup) on a Wafer loader-unloader (Load Port)1, and the Wafer (Wafer) passes through an Equipment Front End Module (EFEM) 2 and a Load lock Module (Load lock)3, is conveyed into a degassing (degassing) cavity 4 for degassing, is conveyed to a 6-treatment Process chamber (Process Module, PM) for deposition of a metal film, and is conveyed back to the Wafer storage box.
The degassing chamber 4 is used for heating the wafer to a certain temperature, and removing water vapor and other volatile impurities adsorbed on the surface of the wafer. The wafer enters the Degas chamber and is placed on a heated susceptor. Because the heater is difficult to reach absolute balance and the friction coefficients of different types of wafers are different, the wafers are easy to slide in the process, so that the heating is not uniform, and further, the water vapor and volatile impurities in partial regions are not completely removed. Severe slipping can even lead to sheet transfer failure with the risk of debris.
Therefore, how to avoid wafer slipping is an urgent technical problem to be solved in the art.
Disclosure of Invention
The invention aims to provide a wafer bearing disc and semiconductor process equipment comprising the same, wherein the wafer bearing disc can prevent wafers from sliding in the transportation or process, ensure the uniformity of wafer heating and improve the safety of a semiconductor process.
In order to achieve the above object, as an aspect of the present invention, a wafer tray is provided, the wafer tray includes a wafer tray, a lifting assembly, a carrier ring, and a plurality of fingers, the wafer tray is configured to carry a wafer, the carrier ring is disposed around the wafer tray, the plurality of fingers are disposed on the carrier ring and spaced apart from each other along a circumferential direction of the carrier ring, the fingers have supporting portions and limiting portions fixedly disposed on the supporting portions, the lifting assembly is configured to drive the carrier ring to move the plurality of fingers to lift up, so that the supporting portions of the plurality of fingers lift up the wafer on the wafer tray, or drive the carrier ring to move the plurality of fingers to lower, so as to place the wafer on the wafer tray, the limiting portions have guiding inclined surfaces facing inward, and a diameter of a reference circle defined by an inner side of the plurality of limiting portions is greater than a diameter of a reference circle defined by an inner side of the plurality of supporting portions And the limiting parts are used for guiding and limiting the wafer.
Optionally, the direction inclined plane includes first direction section, second direction section and the third direction section that from top to bottom distributes in proper order, the second direction section be the plane and with the horizontal plane between the contained angle be 110-120, first direction section with the third direction section is the curved surface, just first direction section transitional coupling be in the top surface of spacing portion with between the second direction section, third direction section transitional coupling be in the medial surface of spacing portion with between the second direction section.
Optionally, a temperature measurement fixing hole is formed in the limiting portion, a first temperature measurement sensor is arranged in the temperature measurement fixing hole, and the first temperature measurement sensor is used for detecting the actual temperature of the surface of the wafer in a non-contact manner.
Optionally, the first temperature measurement sensor includes a housing, a rotating mechanism and an infrared sensor, the housing is fixedly disposed in the temperature measurement fixing hole, the rotating mechanism is fixedly disposed in the housing, the infrared sensor is rotatably disposed in the housing through the rotating mechanism, and the rotating mechanism is configured to drive the infrared sensor to freely rotate in the housing, so as to change a temperature measurement position of the infrared sensor on the surface of the wafer.
Optionally, rotary mechanism including hold shell and drive division, infrared sensor set up in hold in the shell, it corresponds to hold the shell temperature measurement opening has in temperature measurement fixed orifices open-ended one side, infrared sensor is used for passing through the temperature measurement opening is right the wafer carries out the temperature measurement, it deviates from to hold the shell temperature measurement open-ended one side is passed through drive division with the inner wall fixed connection of shell, just hold all the other sides of shell pass through the elasticity telescopic link with the inner wall swing joint of shell, drive division is used for the drive hold the shell and drive infrared sensor for the shell free rotation.
Optionally, a second temperature sensor is disposed on the top of the support portion, and the second temperature sensor is configured to detect an actual temperature of the wafer at a position corresponding to the second temperature sensor in a contact manner.
Optionally, a wire hole is formed inside the finger, a cable is arranged in the wire hole, and the first temperature measuring sensor and the second temperature measuring sensor both output the detected actual temperature through the cable in the wire hole.
As a second aspect of the present invention, there is provided a semiconductor processing apparatus, comprising a process chamber and a wafer carrying tray disposed inside the process chamber, wherein the wafer carrying tray is the wafer carrying tray described above.
Optionally, the semiconductor processing equipment further comprises a control module and a heater, the heater is used for heating the wafer carried on the wafer carrying tray, and the control module is used for adjusting the heating temperature of the heater according to the actual temperature detected by the first temperature measurement sensor and/or the second temperature measurement sensor so as to keep the temperature of the wafer at a preset temperature.
Optionally, the control module is located outside the process chamber, a wiring hole is formed inside the finger, a cable is arranged in the wiring hole, and the first temperature measuring sensor and the second temperature measuring sensor are both connected with the control module through the cable in the wiring hole; the cable is sleeved with a corrugated pipe, one end of the corrugated pipe is connected with the first temperature measuring sensor or the second temperature measuring sensor in a sealing mode, and the other end of the corrugated pipe is connected with the wall of the process cavity in a sealing mode.
In the wafer bearing disc and the semiconductor process equipment provided by the invention, the wafer bearing disc comprises a plurality of fingers arranged around the wafer tray, the plurality of fingers can support the wafer together through the supporting part after being lifted, so that the function of an ejector pin is realized, the loading and unloading of the wafer are realized, in addition, the supporting part is also fixedly provided with the limiting part, and the limiting part can limit the wafer from the periphery of the wafer, so that the wafer is prevented from sliding in the transportation or process, the wafer heating uniformity can be further ensured, the fragment risk is reduced, and the safety of the semiconductor process is improved; and the limiting parts are provided with guide inclined planes which incline inwards, so that when the wafer is about to contact the supporting part but is not completely positioned in the central position, the wafer can slide down to a plurality of limiting parts by means of the guide inclined planes with inclination angles, automatic calibration and centering of the wafer are realized, and the stability of the position of the wafer is further ensured.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural diagram of a conventional metal magnetron sputtering apparatus;
FIG. 2 is a schematic view of a wafer carrier plate according to an embodiment of the present invention in a process chamber of a semiconductor processing apparatus;
FIG. 3 is a side view of a wafer carrier platter according to an embodiment of the present invention;
FIG. 4 is a schematic view of a finger structure of a wafer carrier according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a portion of a finger in a wafer carrier according to an embodiment of the present invention;
FIG. 6 is a cross-sectional view of the structure of FIG. 5;
fig. 7 is a schematic partial structure diagram of semiconductor processing equipment according to an embodiment of the present invention.
Description of the reference numerals:
100: wafer tray 200: finger(s)
210: the support portion 220: limiting part
221: the guide slope 230: connecting part
300: first temperature measurement sensor 310: outer casing
320: a rotating mechanism 330: infrared sensor
400: the second temperature measurement sensor 500: cable with a flexible connection
600: the bearing ring 10: wafer
20: process chamber
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are given by way of illustration and explanation only, not limitation.
In order to solve the above technical problems, as an aspect of the present invention, a wafer susceptor is provided, as shown in fig. 2 and 3, the wafer susceptor includes a wafer tray 100, a lifting assembly, a carrier ring 600 and a plurality of fingers 200, the wafer tray 100 is used for carrying a wafer 10, the carrier ring 600 is disposed around the wafer tray 100, and the plurality of fingers 200 are disposed on the carrier ring 600 and spaced apart from each other along a circumferential direction of the carrier ring 600. As shown in fig. 4, the fingers 200 have supporting portions 210 and position-limiting portions 220 fixedly disposed on the supporting portions 210, the lifting assembly is configured to drive the carrier ring 600 to drive the plurality of fingers 200 to lift up, so that the supporting portions 210 of the plurality of fingers 200 lift up the wafer 10 on the wafer tray 100, or drive the carrier ring 600 to drive the plurality of fingers 200 to lower down, so as to place the wafer 10 on the wafer tray 100, the position-limiting portions have guiding inclined planes facing inward (i.e., inclined toward one side of the center of the wafer 10), a diameter of a reference circle defined by inner sides of the plurality of position-limiting portions 220 (i.e., a horizontal circle passing through the inner sides of the plurality of position-limiting portions 220) is larger than a diameter of a reference circle defined by inner sides of the plurality of supporting portions 210 (i.e., a horizontal circle passing through the inner sides of the plurality of supporting portions 210), and the plurality of position-limiting portions 220 are configured to guide and position-limit the wafer 10.
Alternatively, the wafer carrier plate may be used in a degas chamber, i.e., the wafer 10 is heated to sublimate impurities from the surface of the wafer 10 into a gaseous state for removal. It should be noted that the inside of the plurality of supporting portions 210 should define a pitch circle diameter smaller than the diameter of the wafer 10 to be processed, so as to prevent the wafer 10 from falling between the plurality of supporting portions 210, and the inside of the plurality of limiting portions 220 should define a pitch circle diameter larger than the diameter of the wafer 10 to be processed, (preferably, the diameter is 2mm (millimeters) larger than the wafer), so as to ensure that the wafer 10 can normally fall on the plurality of supporting portions 210.
In the invention, the wafer bearing disc comprises a plurality of fingers 200 arranged around the wafer tray 100, the plurality of fingers 200 can support the wafer 10 together through the supporting part 210 after being lifted, so that the function of an ejector pin is achieved, the loading and unloading of the wafer 10 are realized, in addition, the supporting part 210 is also fixedly provided with a limiting part 220, and the limiting part 220 can limit the wafer 10 from the periphery of the wafer 10, so that the wafer 10 is prevented from sliding in the transportation or technological process, the stability of the position of the wafer 10 is improved, the heating uniformity of the wafer 10 can be further ensured, the risk of fragments is reduced, and the safety of the semiconductor technology is improved; moreover, the limiting parts 220 are provided with guide slopes 221 inclined inward, so that when the wafer is about to contact the supporting part 210 but is not completely located at the center position, the wafer can slide down to between the limiting parts 220 by means of the guide slopes 221 with inclination angles, automatic alignment and centering of the wafer are realized, and the position stability of the wafer 10 is further ensured.
As an alternative embodiment of the present invention, as shown in fig. 2 and 3, the finger 200 further includes a connecting portion 230 fixedly connected to the supporting portion 210, and the plurality of fingers 200 are fixedly connected to the carrier ring 600 through the connecting portion 230.
As an alternative embodiment of the present invention, as shown in fig. 4, the guiding inclined plane 221 includes a first guiding section 221a, a second guiding section 221b and a third guiding section 221c, which are sequentially distributed from top to bottom, the second guiding section 221b is a plane and has an included angle of 110 ° to 120 ° with a horizontal plane, the first guiding section 221a and the third guiding section 221c are curved surfaces, the first guiding section 221a is transitionally connected between the top surface 223 of the limiting portion 220 and the second guiding section 221b, and the third guiding section 221c is transitionally connected between the inner side surface 222 of the limiting portion and the second guiding section 221b, so as to prevent the wafer 10 from being scratched by sharp edges and corner structures on the limiting portion 220, and ensure the structural integrity of the wafer 10.
In an alternative embodiment of the present invention, the finger 200 and the carrying ring 600 are made of stainless steel.
The inventors of the present invention have discovered that different types of wafers 10 may require different heating temperatures for the degas process, that lower temperatures may result in incomplete removal of water vapor and other impurities, and that higher temperatures may affect the properties (e.g., resistivity) of the surface material of the wafer, thereby requiring strict control of the wafer temperature during the degas process, however, in the prior art, real-time monitoring of the wafer 10 surface temperature during the degas process is generally not possible.
In order to solve the above problem, as a preferred embodiment of the present invention, as shown in fig. 5 and 6, a temperature measurement fixing hole is formed in the stopper portion 220, a first temperature measurement sensor 300 is disposed in the temperature measurement fixing hole, and the first temperature measurement sensor 300 is used for detecting the actual temperature of the surface of the wafer 10 in a non-contact manner.
Specifically, the first temperature measurement sensor 300 may determine the actual temperature of the corresponding position on the surface of the wafer 10 based on the infrared temperature measurement principle according to the thermal radiation energy emitted from the corresponding position on the surface of the wafer 10. In the embodiment of the present invention, the limiting portion 220 of the finger 200 is formed with a temperature measurement fixing hole, the temperature measurement fixing hole is provided with the first temperature measurement sensor 300, and the first temperature measurement sensor 300 can detect the actual temperature of the surface of the wafer 10 in a non-contact manner, so that the heating temperature can be adjusted in real time according to the detection result of the first temperature measurement sensor 300 in the degassing process, the temperature of the wafer 10 is controlled to be the required value, and the product yield is further ensured.
In order to expand the range of the detection area of the first temperature sensor 300 for the temperature of the surface of the wafer, as shown in fig. 5 and fig. 6, as a preferred embodiment of the present invention, the first temperature sensor 300 includes a housing 310, a rotating mechanism 320, and an infrared sensor 330, the housing 310 is fixedly disposed in the temperature measurement fixing hole, the rotating mechanism 320 is fixedly disposed in the housing 310, the infrared sensor 330 is rotatably disposed in the housing 310 through the rotating mechanism 320, and the rotating mechanism 320 is used for driving the infrared sensor 330 to freely rotate in the housing 310 so as to change the temperature measurement position of the infrared sensor 330 on the surface of the wafer 10.
In the embodiment of the present invention, the first temperature sensor 300 includes a housing 310, a rotating mechanism 320 and an infrared sensor 330, and the rotating mechanism 320 can drive the infrared sensor 330 inside the housing 310 to rotate, so as to change the direction of the infrared sensor 330 receiving thermal radiation energy, thereby changing the current detection area of the first temperature sensor 300 on the surface of the wafer 10, further implementing real-time monitoring of the temperature of each position on the surface of the wafer 10, and expanding the variation range of the temperature detection area of the first temperature sensor 300.
As an optional embodiment of the present invention, the rotating mechanism 320 includes a receiving shell and a driving portion, the infrared sensor 330 is disposed in the receiving shell, one side of the receiving shell corresponding to the opening of the temperature measurement fixing hole (i.e., the left side in fig. 6) has a temperature measurement opening, the infrared sensor 330 is configured to measure the temperature of the wafer 10 through the temperature measurement opening, one side of the receiving shell away from the temperature measurement opening (i.e., the right side in fig. 6) is fixedly connected to the inner wall of the housing 310 through the driving portion, the remaining side surfaces of the receiving shell (i.e., the upper and lower sides in fig. 6 and the front and rear sides perpendicular to the paper surface) are movably connected to the inner wall of the housing through an elastic telescopic rod, and the driving portion is configured to drive the receiving shell to drive the infrared sensor 330 to rotate freely relative to the housing 310.
In the embodiment of the present invention, the driving portion can drive the accommodating case to drive the infrared sensor 330 to rotate freely around the driving portion relative to the outer case 310, so that the orientation of the infrared sensor 330 can be freely adjusted, and further, the position of the first temperature sensor 300 for detecting the temperature of the surface of the wafer 10 can be changed. Moreover, the four side surfaces of the accommodating shell surrounding the temperature measurement opening are respectively movably connected with the inner wall of the shell 310 through an elastic telescopic rod, so that the orientation stability of the first temperature measurement sensor 300 can be effectively ensured, and the stability of a temperature detection result is further ensured.
It should be noted that one side of the housing 310 corresponding to the opening of the temperature measurement fixing hole is a transparent structure, so as to avoid blocking the optical path for measuring the temperature of the infrared sensor 330. In order to prevent the infrared sensor 330 from contacting the gas environment in the semiconductor process, it is preferable that a side of the housing 310 corresponding to the opening of the temperature measurement fixing hole has a transparent window structure to isolate the rotating mechanism 320 and the infrared sensor 330 from the external environment of the temperature measurement fixing hole. It is further preferable that a side of the accommodating case of the rotating mechanism 320 corresponding to the opening of the thermometric fixing hole also has a transparent window structure, further preventing the infrared sensor 330 from contacting with the external air.
As a preferred embodiment of the present invention, as shown in fig. 4, a second temperature sensor 400 is disposed on the top of the supporting portion 210, and the second temperature sensor 400 is used for detecting the actual temperature of the wafer 10 corresponding to the second temperature sensor 400 by means of contact.
In the embodiment of the present invention, the second temperature sensor 400 is disposed on the top of the supporting portion 210, so that the first temperature sensor 300 and the second temperature sensor 400 can divide the temperature monitoring task into two parts. Specifically, in the degassing process, the lifting assembly may drive the plurality of fingers 200 to lift to the second temperature sensor 400 at the top of the supporting portion 210 to just contact the wafer 10, as shown in fig. 7, the heating wire of the heater built in the wafer tray 100 is generally divided into an inner loop and an outer loop, and in order to ensure the sufficiency and stability of the process, it is required to ensure that both the inner loop temperature and the outer loop temperature are consistent with the set temperature.
Therefore, in the embodiment of the present invention, the first temperature sensor 300 and the second temperature sensor 400 can respectively monitor the temperature of the central region and the edge region of the wafer 10, that is, the second temperature sensor 400 contacts with the corresponding position of the wafer 10 and detects the temperature of the outer ring (edge region) of the wafer, and the first temperature sensor 300 rotates to receive the infrared radiation energy emitted from the inner ring (central region) of the wafer and converges the energy onto the photosensitive surface of the infrared sensor 330, so as to convert the infrared radiation energy into corresponding electrical signals, thereby implementing the temperature detection of the inner ring (central region) of the wafer. Finally, a control module of a process chamber (such as a degassing chamber) amplifies and converts the signals into temperature data of the inner ring of the wafer. Finally, the process chamber can adjust the heating temperature of the heater according to the comparison result between the collected temperature data and the set temperature until the temperature of the sensor is consistent with the set temperature, and the temperature is kept at the set temperature, so that the fluctuation of the temperature in the degassing process is prevented, and the complete degassing is ensured.
As an alternative embodiment of the present invention, the second temperature sensor 400 is fixedly connected to the supporting portion 210 by a high temperature resistant screw.
As an alternative embodiment of the present invention, as shown in fig. 4, a wiring hole is formed inside the finger 200, a cable 500 is disposed in the wiring hole, and both the first temperature sensor 300 and the second temperature sensor 400 output the detected actual temperature through the cable 500 in the wiring hole (i.e., are connected to a control module of the semiconductor process equipment through the cable 500).
As a preferred embodiment of the present invention, the control module is located outside a process chamber of the semiconductor process equipment, the cable 500 is sleeved with a corrugated tube, one end of the corrugated tube is hermetically connected to the corresponding temperature sensor (i.e., the first temperature sensor 300 or the second temperature sensor 400), and the other end of the corrugated tube is hermetically connected to a wall of the process chamber to maintain the airtightness of the process chamber.
Optionally, the contact position of the second temperature sensor 400 and the support portion 210 and the connection position of the first temperature sensor 300 and the bellows are hermetically connected by a high temperature resistant sealing ring (e.g., an O-ring).
As a second aspect of the present invention, a semiconductor processing apparatus is provided, which includes a process chamber 20 and a wafer carrier disposed inside the process chamber 20, wherein the wafer carrier is provided in an embodiment of the present invention.
Optionally, the process chamber is a degas chamber, i.e., a chamber for heating the wafer 10 to sublimate impurities on the surface of the wafer 10 into a gaseous state for removing the impurities.
As a preferred embodiment of the present invention, as shown in fig. 5 and 6, a temperature measurement fixing hole is formed on the limiting portion 220, a first temperature measurement sensor 300 is disposed in the temperature measurement fixing hole, and the first temperature measurement sensor 300 is used for detecting the actual temperature of the surface of the wafer 10 in a non-contact manner; the second temperature sensor 400 is disposed on the top of the supporting portion 210, and the second temperature sensor 400 is used for detecting the actual temperature of the wafer 10 corresponding to the second temperature sensor 400 in a contact manner;
the semiconductor processing equipment further comprises a control module and a heater, wherein the heater is used for heating the wafer 10 carried on the wafer carrying disc, and the control module is used for adjusting the heating temperature of the heater according to the actual temperature detected by the first temperature measurement sensor 300 and/or the second temperature measurement sensor 400 so as to keep the temperature of the wafer 10 at the preset temperature.
In the embodiment of the invention, the first temperature sensor 300 can detect the actual temperature of the inner ring of the wafer 10 in real time, the second temperature sensor 400 can detect the actual temperature of the outer ring of the wafer 10 in real time, and the control module can adjust the heating temperature in real time in the degassing process according to the actual temperature detected by the first temperature sensor 300 and/or the second temperature sensor 400, so that the temperature of the wafer 10 is controlled at the preset temperature, and the product yield is further ensured.
As a preferred embodiment of the present invention, the control module is located outside the process chamber 20, a wiring hole is formed inside the finger 200, a cable 500 is arranged in the wiring hole, and the temperature sensors on the finger 200 are all connected with the control module through the cable 500 in the wiring hole; the cable 500 is sleeved with a corrugated pipe, one end of the corrugated pipe is hermetically connected with the corresponding temperature measuring sensor, and the other end of the corrugated pipe is hermetically connected with the wall of the process chamber so as to keep the air tightness of the process chamber.
Optionally, the contact position of the second temperature sensor 400 and the support portion 210 and the connection position of the first temperature sensor 300 and the bellows are both connected by a high temperature resistant sealing ring in a sealing manner.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and scope of the invention, and such modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A wafer bearing disc is characterized by comprising a wafer tray, a lifting component, a bearing ring and a plurality of fingers, wherein the wafer tray is used for bearing a wafer, the bearing ring is arranged around the wafer tray, the fingers are arranged on the bearing ring and are arranged at intervals along the circumferential direction of the bearing ring, the fingers are provided with supporting parts and limiting parts fixedly arranged on the supporting parts, the lifting component is used for driving the bearing ring to drive the plurality of fingers to lift up, so that the supporting parts of the plurality of fingers lift up the wafer on the wafer tray, or driving the bearing ring to drive the plurality of fingers to descend so as to place the wafer on the wafer tray, the limiting parts are provided with guide inclined planes facing towards the inner sides, the diameter of a reference circle defined by the inner sides of the limiting parts is larger than that of the inner sides of the supporting parts, the plurality of limiting parts are used for guiding and limiting the wafer.
2. The wafer carrier tray of claim 1, wherein the guiding slope comprises a first guiding section, a second guiding section and a third guiding section which are sequentially distributed from top to bottom, the second guiding section is a plane and has an included angle of 110-120 degrees with a horizontal plane, the first guiding section and the third guiding section are curved surfaces, the first guiding section is in transition connection between the top surface of the limiting portion and the second guiding section, and the third guiding section is in transition connection between the inner side surface of the limiting portion and the second guiding section.
3. The wafer carrier tray of claim 1, wherein a temperature measurement fixing hole is formed on the limiting portion, and a first temperature measurement sensor is disposed in the temperature measurement fixing hole and used for detecting the actual temperature of the surface of the wafer in a non-contact manner.
4. The wafer carrier tray of claim 3, wherein the first temperature measurement sensor comprises a housing, a rotating mechanism and an infrared sensor, the housing is fixedly disposed in the temperature measurement fixing hole, the rotating mechanism is fixedly disposed in the housing, the infrared sensor is rotatably disposed in the housing via the rotating mechanism, and the rotating mechanism is configured to drive the infrared sensor to rotate freely in the housing, so as to change the temperature measurement position of the infrared sensor on the surface of the wafer.
5. The wafer carrier tray of claim 4, wherein the rotating mechanism comprises a receiving shell and a driving portion, the infrared sensor is disposed in the receiving shell, a temperature measurement opening is formed in one side of the receiving shell corresponding to the temperature measurement fixing hole opening, the infrared sensor is used for measuring the temperature of the wafer through the temperature measurement opening, one side of the receiving shell departing from the temperature measurement opening is fixedly connected with the inner wall of the housing through the driving portion, the other sides of the receiving shell are movably connected with the inner wall of the housing through elastic telescopic rods, and the driving portion is used for driving the receiving shell to drive the infrared sensor to freely rotate relative to the housing.
6. The wafer carrier tray of any one of claims 3 to 5, wherein a second temperature sensor is disposed on the top of the supporting portion, and the second temperature sensor is used for detecting an actual temperature of the wafer at a position corresponding to the second temperature sensor in a contact manner.
7. The wafer carrier tray of claim 6, wherein a wire hole is formed inside the finger, a cable is disposed in the wire hole, and the first temperature sensor and the second temperature sensor output the detected actual temperature through the cable in the wire hole.
8. Semiconductor processing equipment comprising a process chamber and a wafer carrier plate arranged inside the process chamber, characterized in that the wafer carrier plate is as claimed in any one of claims 1 to 7.
9. The semiconductor processing apparatus of claim 8, wherein the wafer carrier tray is as claimed in any one of claims 3 to 6, the apparatus further comprising a control module and a heater, the heater being configured to heat the wafer carried on the wafer carrier tray, the control module being configured to adjust a heating temperature of the heater according to the actual temperature detected by the first temperature sensor and/or the second temperature sensor to maintain the temperature of the wafer at a predetermined temperature.
10. The semiconductor processing equipment according to claim 9, wherein the control module is located outside the process chamber, a wiring hole is formed inside the finger, a cable is arranged in the wiring hole, and the first temperature sensor and the second temperature sensor are both connected with the control module through the cable in the wiring hole; the cable is sleeved with a corrugated pipe, one end of the corrugated pipe is in sealing connection with the first temperature measuring sensor or the second temperature measuring sensor, and the other end of the corrugated pipe is in sealing connection with the wall of the process cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210492267.1A CN114743923A (en) | 2022-05-07 | 2022-05-07 | Wafer bearing disc and semiconductor process equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210492267.1A CN114743923A (en) | 2022-05-07 | 2022-05-07 | Wafer bearing disc and semiconductor process equipment |
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| CN114743923A true CN114743923A (en) | 2022-07-12 |
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| CN202210492267.1A Pending CN114743923A (en) | 2022-05-07 | 2022-05-07 | Wafer bearing disc and semiconductor process equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024112616A1 (en) * | 2022-11-22 | 2024-05-30 | Lam Research Corporation | Post-placement wafer-centering systems for semiconductor processing tools |
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- 2022-05-07 CN CN202210492267.1A patent/CN114743923A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024112616A1 (en) * | 2022-11-22 | 2024-05-30 | Lam Research Corporation | Post-placement wafer-centering systems for semiconductor processing tools |
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