CN114740642A - 一种基于单晶铌酸锂薄膜的偏振滤波型相位调制器 - Google Patents
一种基于单晶铌酸锂薄膜的偏振滤波型相位调制器 Download PDFInfo
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Abstract
本发明公开了一种基于单晶铌酸锂薄膜的偏振滤波型相位调制器,可应用于光通信、光计算、微波光子技术等,属于集成光学领域。本发明器件结构主要是铌酸锂薄膜(LNOI)上沉积氮化硅构成加载条型直波导、直波导上前端做金属银覆层构成具有偏振滤波功能的波导结构,以及在波导后端两侧设置相位控制电极结构。本发明的结构设计可同时实现偏振滤波和相位调制,使整个结构更为紧凑、高效,更有利于实现光路集成。
Description
技术领域:
本发明属于集成光学领域,涉及一种基于铌酸锂薄膜(LNOI)的偏振滤波型相位控制器,可应用于光通信、光计算、微波光子技术等。
背景技术
铌酸锂(LN)作为一种新型材料具有诸多优良的光学特性,包括电光系数大、非线性光学效应、宽光学透明窗口、温度稳定性好,热光系数低等,因此,在过去的十几年中,铌酸锂在集成光学领域得到迅速发展。新发展的新型单晶铌酸锂薄膜,很大程度上保留了铌酸锂的固有优势,整体结构厚度在微米量级,其中铌酸锂薄膜的厚度仅在亚微米量级,加之铌酸锂折射率(n≈2.1)与二氧化硅折射率(n≈1.4)差高达0.7,故利用LNOI结构制作的波导对光的束缚能力很强,可以将光模场限定在很小范围内,从而可以实现器件的小型化和集成化。光波导是集成光学中的基础光学元件,是光信号传输的通道,也是多种复杂光学器件的主要结构之一。铌酸锂薄膜的波导结构主要有铌酸锂脊型波导和加载条脊型波导两种类型。以单晶铌酸锂薄膜为基底,通过刻蚀和沉积等方法在LN的表面形成脊型结构,可以有效地束缚光(Δn≈0.7)形成较小的光模场(模场大小约为1μm2)。这种脊型波导作为一种新型的光波导,由于其高的折射率差使其相比传统体材料铌酸锂波导拥有了小的弯曲半径,更小的波导截面,更短的器件长度以及在调制领域更低的调制电压和更高的调制带宽。加载条型波导是LNOI上光波导的一种重要类型。它通过在LNOI表面覆盖一层加载条材料来实现对光的限制作用。加载条型波导可以实现铌酸锂与其他材料的异质集成,将两种材料的优良特性结合起来。
由于铌酸锂-氮化硅波导材料波导层和包层间的高折射率差,光场可以很好的束缚在波导内传输,从而使得器件的尺寸极大缩小。由于存在较高的折射率差导致双折射效应也较大,光子器件不得不面对偏振相关问题,即光器件性能受入射偏振态的影响,存在偏振模色散和偏振相关损耗等问题。所以解决器件的偏振相关性是光器件的一项重要挑战。可见,解决光器件的偏振相关性的方案之一便是使用偏振无关的光器件,即偏振态对性能无影响的光器件,以降低器件的性能损耗。
传统的偏振器件与调制器件是分离的,这无异于增大整个系统的长度和传输损耗,并且目前的偏振器通常利用浅蚀刻波导或亚波长光栅波导来实现偏振选择的功能,然而这种偏振器普遍尺寸大,结构复杂。
发明内容
为了解决传统的相位调制器件与偏振滤波器件分离的问题,本发明提出将偏振滤波与相位调制功能相结合的偏振滤波型相位调制器。本发明采用的具体方案为:在光波导表面做一个金属覆盖层构,当电磁波在光波导管中传输时,会形成管壁电流,该管壁电流形成的磁场对入射电磁波的磁场有抑制作用,从而只允许电场通过。因此,金属覆层的光波导型起偏器能吸收TM模,而让TE模通过,进而实现偏振滤波。而后在光波导两侧设置相位调制电极,实现相位调制。
具体技术方案如下:
包括光波导(8)和相位控制电极(3),所述的光波导(8)由光波导层(1)制成,光波导层(1)由下至上包括LNOI铌酸锂薄膜以及二氧化硅保护层(4),其中,所述的LNOI铌酸锂薄膜由下至上包括二氧化硅缓冲层(7)和铌酸锂层(6),
所述相位调制器集成在同一芯片上,具有滤波和相位调制的功能;
对光波导层(1)进行了改进,改进之处在于,所述的铌酸锂层(6)采用X切Y传型铌酸锂,并在所述铌酸锂层(6)上面采用沉积氮化硅形成氮化硅加载条层(5);
在光波导(8)的前端上层增加滤波金属银覆层(2)对光波进行滤波;然后在光波导(8)后端两侧设置相位控制器电极(3)进行相位调制。
氮化硅厚度为350nm,之后继续沉积500nm的二氧化硅以实现对氮化硅层的保护。
滤波金属银覆层(2)厚度为14nm。
整个器件长度1cm;所述光波导(8)的波导宽度为1.7μm;所述两个相位控制器电极(3)的电极间距为8μm、半波电压为2.7V。
本发明的有益效果为:(1)本发明波导结构为薄膜铌酸锂与氮化硅异构,使得相位调制器器具有低损耗、高调制效率、高集成度等优点,具有潜在经济与应用价值,能够在光探测和光通信领域中得到广泛的应用;(2)本发明为偏振滤波型相位调制器,即可以根据需求对光场同时进行偏振滤波和相位的调控,避免了器件分离,实现器件的功能性集成。
附图说明
图1为本发明基于铌酸锂薄膜(LNOI)的偏振滤波型相位调制器结构示意图;
图2为本发明基于铌酸锂薄膜(LNOI)的偏振滤波型相位调制器剖面结构示意图;
图中1.光波导层,2.滤波金属银覆层,3.相位控制器电极,4.二氧化硅保护层、5.氮化硅加载条层、6.铌酸锂层、7.二氧化硅缓冲层、8.光波导。
具体实施方式
下面结合附图和具体实施例对本发明作进一步说明,但本发明不限于此实施例。
本实施例的一种基于铌酸锂薄膜(LNOI)的偏振滤波型相位调制器结构示意图如图1所示。包括光波导层1,金属银覆层2,相位控制电极3。
所述LNOI薄膜由铌酸锂层6与SiO2缓冲层7构成,铌酸锂层6采用X切Y传型铌酸锂,在铌酸锂层6上面采用等离子体电化学沉积技术沉积350nm厚的氮化硅,之后通过电感耦合等离子体设备进行刻蚀形成单模波导,沉积氮化硅形成铌酸锂异构单模波导,构成所述光波导8,该光波导8的上层继续沉积500nm的二氧化硅保护层5对光波导进行保护,之后在光波导的前端通过磁控溅射镀上银覆层对输入光波进行滤波,最后在光波导的后端两侧设置相位控制电极,对经过滤波后的波导进行相位调制。
光场输入波导8进入经过金属银覆层3,光波导8前端表面做一个金属银覆层2结构,当电磁波在光波导8中传输时,会形成管壁电流,该管壁电流形成的磁场对入射电磁波的磁场有抑制作用,从而只允许电场通过。因此,能吸收TM模,而让TE模通过,进而实现偏振滤波。经过偏振滤波后的光波进入波导后端的相位控制区域,在行波电极的作用下折射率发生改变,从而改变波导中光波的相位,即可完成对光的偏振滤波和相位调制。
本发明的制作工艺简单,所述铌酸锂层6采用X切Y传型,所述光波导8利用等离子体增强型化学气相沉积(PECVD)技术在铌酸锂层6上沉积350nm厚的氮化硅,之后通过电感耦合等离子体ICP刻蚀形成波导。
综上所述,本发明提出了基于铌酸锂薄膜(LNOI)的偏振滤波型相位调制器,能够很好地实现对光的偏振滤波和相位调制,由于铌酸锂-氮化硅构成的加载条波导结构的波导层和包层间的高折射率差,光场可以很好的束缚在波导内传输,从而使得器件的尺寸极大缩小,兼顾了铌酸锂的电光调制效率高、传播损耗低以及加工工艺成熟、与现阶段成熟的CMOS工艺兼容可行的优势,同时实现了滤波器与强度调制器的功能性片上集成,避免了器件分离,具有潜在的经济与应用价值,有望在集成光学领域得到广泛应用。
Claims (4)
1.一种基于单晶铌酸锂薄膜的偏振滤波型相位调制器,包括光波导(8)和相位控制电极(3),所述的光波导(8)由光波导层(1)制成,光波导层(1)由下至上包括LNOI铌酸锂薄膜以及二氧化硅保护层(4),其中,所述的LNOI铌酸锂薄膜由下至上包括二氧化硅缓冲层(7)和铌酸锂层(6),其特征在于:
所述相位调制器集成在同一芯片上,具有滤波和相位调制的功能;
对光波导层(1)进行了改进,改进之处在于,所述的铌酸锂层(6)采用X切Y传型铌酸锂,并在所述铌酸锂层(6)上面采用沉积氮化硅形成氮化硅加载条层(5);
在光波导(8)的前端上层增加滤波金属银覆层(2)对光波进行滤波;然后在光波导(8)后端两侧设置相位控制器电极(3)进行相位调制。
2.如权利要求1所述的一种基于单晶铌酸锂薄膜的偏振滤波型相位调制器,其特征在于:氮化硅厚度为350nm,之后继续沉积500nm的二氧化硅以实现对氮化硅层的保护。
3.如权利要求1所述的一种基于单晶铌酸锂薄膜的偏振滤波型相位调制器,其特征在于:滤波金属银覆层(2)厚度为14nm。
4.如权利要求1所述的一种基于单晶铌酸锂薄膜的偏振滤波型相位调制器,其特征在于:整个器件长度1cm;所述光波导(8)的波导宽度为1.7μm;所述两个相位控制器电极(3)的电极间距为8μm、半波电压为2.7V。
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CN116299857B (zh) * | 2023-02-09 | 2024-05-07 | 江苏浦丹光电技术有限公司 | 一种铌酸锂薄膜光波导及其制备方法 |
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