CN114740314A - Method for detecting aging degree of silicone rubber and application thereof - Google Patents
Method for detecting aging degree of silicone rubber and application thereof Download PDFInfo
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- 230000032683 aging Effects 0.000 title claims abstract description 95
- 229920002379 silicone rubber Polymers 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000004945 silicone rubber Substances 0.000 title claims abstract description 37
- 238000010521 absorption reaction Methods 0.000 claims abstract description 64
- 238000001514 detection method Methods 0.000 claims abstract description 36
- 238000002329 infrared spectrum Methods 0.000 claims abstract description 35
- 238000001228 spectrum Methods 0.000 claims abstract description 23
- 238000003878 thermal aging Methods 0.000 claims abstract description 6
- 239000002131 composite material Substances 0.000 claims description 20
- 239000012212 insulator Substances 0.000 claims description 16
- 238000001035 drying Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 230000003595 spectral effect Effects 0.000 claims description 6
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 abstract 1
- 239000000523 sample Substances 0.000 description 98
- 230000005855 radiation Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910003849 O-Si Inorganic materials 0.000 description 1
- 229910003872 O—Si Inorganic materials 0.000 description 1
- OGFYGJDCQZJOFN-UHFFFAOYSA-N [O].[Si].[Si] Chemical compound [O].[Si].[Si] OGFYGJDCQZJOFN-UHFFFAOYSA-N 0.000 description 1
- PNXKRHWROOZWSO-UHFFFAOYSA-N [Si].[Ru] Chemical compound [Si].[Ru] PNXKRHWROOZWSO-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004643 material aging Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1218—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing using optical methods; using charged particle, e.g. electron, beams or X-rays
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/60—Investigating resistance of materials, e.g. refractory materials, to rapid heat changes
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
- G01R31/1245—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of line insulators or spacers, e.g. ceramic overhead line cap insulators; of insulators in HV bushings
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Abstract
The invention provides a method for detecting the aging degree of silicone rubber. The detection method comprises the following steps: carrying out accelerated thermal aging treatment on the high-temperature vulcanized silicone rubber standard sample; detecting the infrared spectrum of a silicon-oxygen-silicon bond and the absorption coefficient information of a terahertz time-domain spectrum in the standard sample at intervals during thermal accelerated aging, and drawing a curve of the infrared spectrum absorption peak area of the standard sample and the change of the absorption coefficient at the terahertz 1.25THz position along with the aging time; detecting an infrared spectrum and a terahertz time-domain spectrum absorption coefficient of a sample to be detected, and acquiring an infrared spectrum absorption peak area of a silicon-oxygen-silicon bond in the sample to be detected and an absorption coefficient of the terahertz time-domain spectrum; and comparing the aging degree information with the infrared spectrum absorption peak area in the standard sample and the curve of the absorption coefficient at the terahertz 1.25THz position along with the aging time change to obtain the aging degree information of the sample to be detected. The detection method can obtain the aging degree of the sample to be detected in situ and has no damage to the sample to be detected.
Description
Technical Field
The invention belongs to the technical field of silicone rubber aging detection, and particularly relates to a method for detecting the aging degree of silicone rubber and application thereof.
Background
In the use process of power equipment, material aging can occur, such as aging of silicone rubber such as a composite insulator, the air permeability and water permeability of the aged composite insulator are enhanced, and media such as moisture, acid and the like easily enter the composite insulator, so that the core rod is degraded, and the composite insulator is abnormally broken in severe cases to cause safety accidents. Therefore, it is necessary to perform aging detection of the composite insulator of the power equipment. However, the current detection method is mainly destructive detection, and the detection can be performed only when the power equipment stops working, which not only damages the power equipment, but also affects the normal operation of the power equipment.
Disclosure of Invention
The invention provides a method for detecting the aging degree of silicone rubber, aiming at the problems that the power equipment is damaged and the normal of the power equipment is influenced in the aging detection process of a composite insulator of the power equipment at present.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for detecting the aging degree of silicone rubber comprises the following steps:
carrying out accelerated thermal aging treatment on the standard sample; the standard sample is high-temperature vulcanized silicone rubber;
in the heating and aging treatment process, detecting infrared spectrum information of silicon-oxygen-silicon bonds and absorption coefficient information of terahertz time-domain spectroscopy in the standard sample at intervals;
according to the obtained infrared spectrum information and the absorption coefficient information of the terahertz time-domain spectrum, drawing a curve of the infrared spectrum absorption peak area of the standard sample changing along with the aging time and a curve of the absorption coefficient at the terahertz position of 1.25THz changing along with the aging time;
detecting an infrared spectrum and a terahertz time-domain spectrum absorption coefficient of a sample to be detected, and acquiring an infrared spectrum absorption peak area of a silicon-oxygen-silicon bond in the sample to be detected and an absorption coefficient of the terahertz time-domain spectrum;
and comparing the information obtained from the sample to be detected with a curve of infrared spectrum absorption peak area in the standard sample changing along with aging time and a curve of absorption coefficient at the terahertz position of 1.25THz changing along with aging time to obtain the aging degree information of the sample to be detected.
Preferably, the accelerated ageing treatment comprises the steps of:
and standing the standard sample at a constant temperature of 200-250 ℃.
Preferably, the time interval for detecting the infrared spectrum information of the silicon-oxygen-silicon bond and the absorption coefficient information of the terahertz time-domain spectrum in the standard sample is 0.5 to 10 days.
Preferably, the standard sample is high-temperature vulcanized silicone rubber for the composite flange.
Preferably, before the standard sample is subjected to the accelerated aging treatment, the method further comprises a step of drying the standard sample.
Preferably, the temperature of the drying treatment is 50 ℃ to 100 ℃.
Preferably, the drying treatment time is 10 to 20 days.
Preferably, the thickness of the standard sample is 0.5mm to 2.0 mm.
Preferably, the sample to be tested and the standard sample are made of the same material before thermal accelerated aging.
Correspondingly, the method for detecting the aging degree of the silicone rubber is applied to the aging degree detection of the composite insulator of the power equipment.
The invention has the beneficial effects that:
compared with the prior art, the method for detecting the aging degree of the ruthenium silicon rubber provided by the invention has the advantages that the infrared spectrum information of silicon-oxygen-silicon bonds in different aging degrees and the absorption coefficient information of the terahertz time-domain spectrum in the standard sample are obtained by accelerating aging of the standard sample, the curve of the infrared spectrum absorption peak area of the standard sample changing along with aging time and the curve of the absorption coefficient at the terahertz 1.25THz changing along with aging time are drawn according to the obtained information, the samples to be detected are subjected to custom detection on the terahertz time-domain spectrum and the terahertz time-domain spectrum, and are compared with the two curves of the standard sample to obtain the aging degree information of the samples to be detected, on one hand, the samples to be detected can be directly detected on the samples to be detected without taking the samples to be detected from parts or equipment attached to the samples to be detected, so that the samples to be detected are not damaged, the normal work of a sample or equipment to which the sample to be detected is attached is not influenced; on the other hand, the detection process is simple and efficient, and the aging degree of the sample to be detected can be accurately obtained. When the detection method is used for detecting the composite edge of the power equipment, the normal work of the power equipment is not influenced, and the power equipment is not damaged.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic flow chart of a method for detecting the degree of aging of silicone rubber provided by an embodiment of the present invention;
FIG. 2 is a simplified schematic diagram of a detection system used in the method for detecting the degree of aging of silicone rubber provided by the embodiment of the present invention;
FIG. 3 is the IR spectrum information of the standard sample obtained by the method for detecting the degree of aging of silicone rubber provided in example 1 of the present invention;
fig. 4 is terahertz time-domain spectral absorption coefficient information of a standard sample obtained by the method for detecting the degree of aging of silicone rubber provided in embodiment 1 of the present invention;
fig. 5 is a curve of infrared spectrum absorption peak area of a standard sample with aging time and a curve of absorption coefficient at terahertz of 1.25THz with aging time obtained by the method for detecting the degree of aging of silicone rubber provided in embodiment 1 of the present invention;
reference numerals:
10. a detection system;
11. a terahertz radiation module; 111. a femtosecond laser; 112. a beam splitter; 113. a time delay device; 114. a terahertz transmitter; 115. a computer-assisted device;
12. a terahertz detection module; 121. a terahertz detector;
13. a sample carrying module; 131. a sample carrying platform; 132. a switch;
20. and (4) sampling.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, an embodiment of the invention provides a method for detecting a degree of aging of silicone rubber. Specifically, the detection method comprises the following steps:
step S01, carrying out accelerated heat aging treatment on the standard sample; the standard is high temperature vulcanized silicone rubber.
In step S01, in some embodiments, the standard is a high temperature vulcanized silicone rubber for composite rims. In some embodiments, before the standard sample is subjected to the accelerated thermal aging treatment, the method further comprises the step of washing and drying the standard sample to remove impurities, moisture and the like remaining in the standard sample from affecting the accelerated thermal aging of the standard sample. In some embodiments, the standard is subjected to a washing treatment using deionized water, ethanol, or the like. In some embodiments, the washed standard sample is placed in an environment with the temperature of 50-100 ℃ for 10-20 days, so as to effectively eliminate the influence on the accuracy of the aging data of the standard sample. In some embodiments, the thickness of the standard sample is 0.5 mm-2.0 mm, and in this thickness range, accurate aging degree data of the standard sample can be obtained, so that the problem that the reliability of the detection result is influenced due to the fact that the standard sample is too thin and scorched or the standard sample is too thick and the aging degree of each part is uneven can be avoided.
In some embodiments, when the standard sample is subjected to heat aging, the dried standard sample is placed in a constant temperature condition of 200-250 ℃ for standing treatment. The constant temperature condition for accelerated thermal aging is preferably 205 ℃ to 215 ℃.
And step S02, detecting infrared spectrum information of silicon-oxygen-silicon bonds and absorption coefficient information of terahertz time-domain spectroscopy in the standard sample at intervals in the heating and aging treatment process.
In step S02, infrared spectral information of silicon-oxygen-silicon (Si-O-Si) bonds and absorption coefficients of terahertz time-domain spectroscopy in the standard sample are detected every 0.5 to 10 days. Preferably every 24 hours. The absorption coefficient of the terahertz time-domain spectrum is detected while infrared spectrum information is detected every time. Of course, in some embodiments, the detection of infrared spectral information is not synchronized with the absorption coefficient of the terahertz time-domain spectrum. In some embodiments, the detection of infrared spectral information employs a fourier infrared spectrometer (FTIR). In some embodiments, the detection of the terahertz time-domain spectral information is performed in accordance with the detection system 10 shown in fig. 2.
Specifically, the detection system 10 includes a terahertz radiation module 11, a terahertz detection module 12, and a sample carrying module 13. The terahertz radiation module 11 is configured to emit femtosecond laser pulses, and divide the femtosecond laser pulses into pump light and probe light, and therefore, the terahertz radiation module 11 includes a femtosecond laser 111, a beam splitter 112, a time delay device 113, a terahertz emitter 114, and a computer-aided device 115, where the femtosecond laser 111 emits the femtosecond laser pulses, and the femtosecond laser pulses are divided into the pump light and the probe light after passing through the beam splitter 112, and the pump light is transmitted to the terahertz emitter 114 after passing through the time delay device 113, and is transmitted to the sample carrying module 13 via the terahertz emitter 114; and the detection light is transmitted to the terahertz detection module 12. The terahertz detection module 12 includes a terahertz detector 121, and the sample bearing module 113 includes a sample bearing platform 131 and a switch 132, where the sample bearing platform 131 is configured to bear the sample 20, so that light emitted by the terahertz emitter 114 irradiates, light penetrating the sample 20 is reflected, converged with the detection light, detected and collected by the terahertz detector 121, and transmitted to the computer-assisted device 115, so as to obtain absorption coefficient information of the terahertz time-domain spectrum of the sample.
And step S03, drawing a curve of the infrared spectrum absorption peak area of the standard sample changing along with aging time and a curve of the absorption coefficient at the terahertz position of 1.25THz changing along with aging time according to the obtained infrared spectrum information and the absorption coefficient information of the terahertz time-domain spectrum.
In step S03, for convenience of comparison, a curve of infrared spectrum absorption peak area with aging time and a curve of absorption coefficient at terahertz of 1.25THz with aging time may be plotted in the same graph.
And S04, detecting the infrared spectrum and the absorption coefficient of the terahertz time-domain spectrum of the sample to be detected, and acquiring the infrared spectrum absorption peak area of the silicon-oxygen-silicon bond in the sample to be detected and the absorption coefficient of the terahertz time-domain spectrum.
And step S05, comparing the information obtained from the sample to be tested with a curve of infrared spectrum absorption peak area in the standard sample changing along with aging time and a curve of absorption coefficient at the terahertz position of 1.25THz changing along with aging time to obtain the aging degree information of the sample to be tested.
In step S05, the sample to be tested and the standard sample are made of the same material before the thermal accelerated aging. In the embodiment of the invention, the sample to be detected and the standard sample are made of the same material before thermal accelerated aging, which means that the sample to be detected is made of the same material before use by a user, namely when the sample to be detected leaves a factory, and when the sample to be detected is assembled with a part or equipment attached to the sample to be detected for use, the sample to be detected inevitably has aging or deterioration of different degrees, so that in the process of detecting the sample to be detected, the chemical components of the sample to be detected are inevitably different from those of the standard sample, which is allowed, and the standard sample and the sample to be detected are made of the same material before processing and forming, and both are suitable for being detected by the detection method of the invention to judge the aging degree. In some embodiments, the sample to be detected can be a composite insulator attached to the power equipment, and when the composite insulator is detected, the composite insulator does not need to be taken down from the power equipment, so that the power equipment can normally operate without being influenced by a detection process.
In order to more effectively explain the technical scheme of the invention, the following is further explained by specific examples.
Example 1
A method for detecting the aging degree of silicone rubber comprises the following steps:
(1) taking newly purchased high-temperature vulcanized silicone rubber (HTV) for the composite insulator as a standard sample, wherein the thickness of the standard sample is 1mm, the diameter of the standard sample is 10mm, cleaning the standard sample by using deionized water, and then standing the standard sample in an environment at 90 ℃ for 15 days to dry the standard sample; and (3) placing the dried standard sample in a constant-temperature air-blast drying oven, setting the constant temperature to be 210 ℃, and aging for 80 days. A plurality of groups of standard samples are arranged, and when each standard sample is aged, the central shaft of each standard sample is placed along the horizontal direction, so that uneven thermal accelerated aging of each part in the standard sample is avoided; and the adjacent standard samples are spaced to avoid uneven thermal accelerated aging caused by mutual adhesion.
(2) Detecting the characteristic peak of Si-O-Si bonds of the standard sample by using a Fourier infrared spectrometer on the 0 th day, the 1 st day, the 2 nd day, the 3 rd day, the 4 th day, the 5th day, the 6 th day, the 7 th day, the 10 th day, the 20 th day, the 30 th day and the 40 th day, wherein the detection result is shown in figure 3; on days 0, 1, 2, 3, 4, 5, 6, 7, 10, 20, 30, 40, 60, and 80, the characteristic peak of the Si — O-Si bond was detected by the detection system 10 by the terahertz time-domain spectroscopy absorption coefficient detection, and the detection results are shown in fig. 4.
As can be seen from FIG. 3, the Si-O-Si backbone, the comparative sample Si-O-Si (1006 cm)-1) The absorption peak height of (2) shows that the longer the thermal-oxidative aging time is, the more the Si-O-Si absorption peak rises in the silicone rubber sample.
As can be seen from fig. 4, in the vicinity of 0.81, 1.25, and 1.51THz, there are more distinct absorption peaks, and the intensity of the absorption peak in the vicinity of 1.25THz is the highest. (3) And (3) according to the information obtained in the step (2), drawing a curve of the infrared spectrum absorption peak area of the standard sample along with the aging time and a curve of the absorption coefficient at the terahertz position of 1.25THz along with the aging time, wherein the result is shown in figure 5.
It can be seen from fig. 5 that the largest characteristic absorption peak is present at 1.25THz, which also has a good positive correlation with aging. Therefore, 1.25THz can be used as a characteristic peak for detecting the degree of aging of silicone rubber, and the peak value thereof also becomes smaller as the degree of aging increases.
(4) The method comprises the steps that a 500kV double-V-string composite insulator of a working power device is used as a sample to be detected, infrared spectrum and terahertz time-domain spectrum absorption coefficients of the composite insulator in the power device are detected, and the infrared spectrum absorption peak area of a silicon-oxygen-silicon bond in the sample to be detected and the absorption coefficient of the terahertz time-domain spectrum are obtained, wherein the infrared spectrum absorption peak area is 11.5; the absorption coefficient of the terahertz time-domain spectrum is 44.6.
(5) And (5) comparing the information of the sample to be detected obtained in the step (4) with the curve of the infrared spectrum absorption peak area in the standard sample changing along with the aging time and the curve of the absorption coefficient at the terahertz position of 1.25THz changing along with the aging time in the step (3) to obtain the aging degree information of the sample to be detected. By combining the data in fig. 5 and the data in the step (4), it can be seen that the aging degree of the composite insulator of the 500kV double-V string composite insulator of the power equipment is low.
Therefore, the method for detecting the aging degree of the silicone rubber can obtain the aging degree of the sample to be detected in the working state of the sample to be detected, the normal work of the sample to be detected is not affected, and the sample to be detected cannot be damaged.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The method for detecting the aging degree of the silicone rubber is characterized by comprising the following steps:
carrying out accelerated thermal aging treatment on the standard sample; the standard sample is high-temperature vulcanized silicone rubber;
in the heating and aging treatment process, detecting infrared spectrum information of silicon-oxygen-silicon bonds and absorption coefficient information of terahertz time-domain spectroscopy in the standard sample at intervals;
according to the obtained infrared spectrum information and the absorption coefficient information of the terahertz time-domain spectrum, drawing a curve of the infrared spectrum absorption peak area of the standard sample changing along with aging time and a curve of the absorption coefficient at the terahertz 1.25THz changing along with aging time;
detecting an infrared spectrum and a terahertz time-domain spectrum absorption coefficient of a sample to be detected, and acquiring an infrared spectrum absorption peak area of a silicon-oxygen-silicon bond in the sample to be detected and an absorption coefficient of the terahertz time-domain spectrum;
and comparing the information obtained from the sample to be detected with a curve of infrared spectrum absorption peak area in the standard sample changing along with aging time and a curve of absorption coefficient at the terahertz position of 1.25THz changing along with aging time to obtain the aging degree information of the sample to be detected.
2. The method for detecting the degree of aging of silicone rubber according to claim 1, wherein the accelerated aging process comprises the steps of:
and standing the standard sample at a constant temperature of 200-250 ℃.
3. The method for detecting the aging degree of silicone rubber according to claim 1, wherein the time interval between detection of the infrared spectral information of the silicon-oxygen-silicon bond in the standard sample and detection of the absorption coefficient information of the terahertz time-domain spectrum is 0.5 to 10 days.
4. The method for detecting the degree of aging of silicone rubber according to any of claims 1 to 3, wherein the standard sample is a high-temperature vulcanized silicone rubber for a composite rim.
5. The method for detecting the degree of aging of silicone rubber according to any of claims 1 to 3, further comprising a step of subjecting the standard sample to a drying treatment before subjecting the standard sample to the accelerated aging treatment.
6. The method for detecting the degree of aging of silicone rubber according to claim 5, wherein the temperature of the drying treatment is 50 ℃ to 100 ℃.
7. The method for detecting the degree of aging of silicone rubber according to claim 6, wherein the time of the drying treatment is 10 to 20 days.
8. The method for measuring the degree of aging of silicone rubber according to any of claims 1 to 3, wherein the thickness of the standard sample is 0.5mm to 2.0 mm.
9. The method for detecting the aging degree of silicone rubber according to any one of claims 1 to 3, wherein the sample to be tested and the standard sample are made of the same material before thermal accelerated aging.
10. Use of the method for detecting the degree of aging of silicone rubber according to any one of claims 1 to 9 in the detection of the degree of aging of a composite insulator of an electrical device.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116626272A (en) * | 2023-04-25 | 2023-08-22 | 苏州恒则成智能科技有限公司 | Rubber testing system and method |
| CN117368620A (en) * | 2023-12-04 | 2024-01-09 | 清华大学深圳国际研究生院 | Composite insulator aging experimental device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116626272A (en) * | 2023-04-25 | 2023-08-22 | 苏州恒则成智能科技有限公司 | Rubber testing system and method |
| CN116626272B (en) * | 2023-04-25 | 2024-04-02 | 苏州恒则成智能科技有限公司 | Rubber testing system and method |
| CN117368620A (en) * | 2023-12-04 | 2024-01-09 | 清华大学深圳国际研究生院 | Composite insulator aging experimental device |
| CN117368620B (en) * | 2023-12-04 | 2024-04-12 | 清华大学深圳国际研究生院 | Composite insulator aging experimental device |
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