CN114737248B - High-temperature annealing method for growing ferrite single crystal thick film based on liquid phase epitaxy method - Google Patents
High-temperature annealing method for growing ferrite single crystal thick film based on liquid phase epitaxy method Download PDFInfo
- Publication number
- CN114737248B CN114737248B CN202210282043.8A CN202210282043A CN114737248B CN 114737248 B CN114737248 B CN 114737248B CN 202210282043 A CN202210282043 A CN 202210282043A CN 114737248 B CN114737248 B CN 114737248B
- Authority
- CN
- China
- Prior art keywords
- thick film
- single crystal
- temperature
- liquid phase
- crystal thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
Abstract
The invention discloses a high-temperature annealing method for growing a ferrite single crystal thick film based on a liquid phase epitaxy method, belonging to the technical field of magnetic functional materials, comprising the following steps: preparing a hundred-micron ferrite single crystal thick film by using GGG or SGGG as a substrate and adopting a liquid phase epitaxy method, performing step-type temperature rise and fall annealing treatment under the mixed atmosphere of inert gas and oxygen, and then performing acid boiling and cleaning to obtain a ferrite single crystal thick film with smooth and flat surface; the thickness of the monocrystalline film annealed by the method is thick, the dielectric loss, the ferromagnetic resonance line width and the optical loss are reduced, and the accumulated stress is released, so that the quality of the monocrystalline film is obviously improved.
Description
Technical Field
The invention relates to the technical field of ferrite single crystal thick films, in particular to a high-temperature annealing method of a ferrite single crystal thick film.
Background
The microwave ferrite is the only practical gyromagnetic medium material in the microwave frequency band (100 MHz-100 GHz) at present, and is divided into three major categories of garnet type, spinel type and magnetoplumbite type, and products such as pellets, films, rings and the like are used for devices such as circulators, isolators, oscillators, filters and the like. With the development of miniaturization, integration and light weight of ferrite devices, microwave ferrite films are becoming important points of research on chip-type devices. According to different crystallization states, the microwave ferrite film can be divided into a plurality of single crystal films and single crystal films, and compared with a polycrystalline film, the ferrite single crystal film has lower ferromagnetic resonance line width and higher Q value, and is a core material of devices such as a filter, a limiter, an isolator and the like. Ferrite single crystal film preparation methods include Pulsed Laser Deposition (PLD), molecular Beam Epitaxy (MBE), and Liquid Phase Epitaxy (LPE). The PLD and the MBE can be used for preparing nano-scale films, the practical application value is not high in the field of microwave devices, and the LPE is a mainstream technical means for preparing hundred-micron single-crystal thick films with controllable thickness, large size and low defects in a batched mode at home and abroad.
The application performance of the LPE method for growing ferrite single crystal films is affected by various factors, and magnetic moment, loss and crystal processability are mainly concerned in the field of microwave application. Wherein the magnetic moment is determined by the crystal growth stage and the loss and workability can be optimized by intermediate processes after the completion of the crystal growth. The loss is to a certain extent made of Fe 2+ Content effects, due to (see: he Huahui, su Jun. Microwave and magneto-optical): (1) Subject 4 + Or 2 + Metal ions (e.g. Pb 4+ 、Pt 4+ ) Effect of incorporation and oxygen vacancy formation, part of Fe 3+ Will be converted into Fe 2+ The optical loss of the monocrystalline film is not reduced; (2) Fe (Fe) 2+ The occurrence of (2) causes Fe 2+ 、Fe 3+ Electron transfer occurs between the two, resulting in an increase in dielectric loss of the single crystal film; (3) Although Fe is 2+ The content is small but Fe 2+ The preferential distribution in the octahedral sites will lead to a larger magnetic anisotropy, i.e. to linewidth anisotropy, an increase in the ferromagnetic resonance linewidth (Δh). The processability of the single crystal film is mainly influenced by the internal stress of the single crystal film, particularly the single crystal thick film for microwaves, when the single crystal thick film is grown to a certain thickness, the excessive stress accumulation is extremely easy to cause crystal cracking, deformation and microstructure change, and even the movement state of the magnetic moment of the crystal is changed, so that the processability and the quality of the single crystal film are adversely affected.
To solve the above problems, an annealing process is often used to treat the epitaxial film to improve the quality of the film and to release the stress, and related arts can see chinese patents CN102969241, CN108389718B, CN101311374A, CN101148753a, etc. Therein, publication No. CN108389718B discloses a magnetic double-layer garnet material having both an in-plane and an out-of-plane easy magnetization direction and a method for preparing the same, which prepares a Yttrium Iron Garnet (YIG) thin film substrate by a liquid phase epitaxy method, and then grows (TmBi) on the YIG substrate by a magnetron sputtering method 3 (FeGa) 5 O 12 Finally, annealing the film in air at 800 ℃ for 2 hours to obtain the magnetic double-layer garnet material, wherein the aim of annealing is mainly to solve the problem of polycrystal (TmBi) of magnetron sputtering epitaxy 3 (FeGa) 5 O 12 Film cracking problems. Chinese patent application No. CN201710163858.3 discloses a method for preparing submicron crack-free ferrite thick film by using a step annealing technique, which adopts magnetron sputtering method to deposit ferrite thin film on single crystal substrate, and improves microstructure and crystallization degree of the polycrystalline thin film by annealing.
However, there is currently no report on the single crystal thick film annealing process, mainly because: the thin film prepared by magnetron sputtering and other methods is mostly polycrystalline or amorphous, the crystallization degree can be improved by simple temperature-rising annealing, but for a single crystal thick film, the whole crystal is combined with a substrate by covalent bonds, the annealing process is a means for controlling lattice vibration, further releasing stress and adjusting the internal chemical state of the material, and the difficulty and the process control precision are high.
Disclosure of Invention
The invention aims to provide a high-temperature annealing method for growing a ferrite single crystal thick film based on a liquid phase epitaxy method, which controls Fe through annealing 2+ The concentration in the crystal reduces the loss of the single crystal thick film in microwave application, reduces the stress in the crystal and inhibits the cracking problem of the single crystal thick film.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
a high-temperature annealing method for growing ferrite single crystal thick films based on a liquid phase epitaxy method comprises the following steps:
(1) Cleaning and drying the GGG or SGGG substrate for standby;
(2) Placing the standby substrate in the step (1) into a liquid phase epitaxial furnace, preheating, and then carrying out epitaxial growth of a single crystal thick film;
(3) Annealing the single crystal thick film obtained in the step (2);
(4) And (3) cleaning the annealed single-crystal thick film in the step (3) to finish the process.
As a preferable technical solution, in the step (1), the method for cleaning and drying the substrate is as follows: the substrate is clamped, then placed in a mixed solvent for cleaning, then activated by mixed acid, then washed clean by deionized water, and finally dried by an air gun.
Preferably, the epitaxial film is a garnet single crystal film.
As a preferred technical scheme, the epitaxial growth conditions of step (2) are: the growth temperature range is 900-865 ℃, the cooling rate is 0.1-2 ℃/min, the rotating speed is 150r/min, the growth time is 0.5-72h, and the thickness of the thick film is 100-300 mu m.
In the preferred technical scheme, in the step (3), the annealing treatment method is a step-type lifting heat treatment.
As a further preferable technical scheme, the step-type lifting heat treatment method comprises the following steps: introducing mixed gas of inert gas and oxygen with the volume ratio of 1:1-1:4 into the annealing cavity in advance, wherein the air flow is 20-40ml/min, and then executing a step-type temperature raising and reducing program: heating to 400 ℃ at 2-4 ℃/min, preserving heat for 2-4h, heating to 750-950 ℃ at 0.5-1.5 ℃/min, preserving heat for 12-48h for annealing, cooling to 600-700 ℃ at 0.25-1 ℃/min, preserving heat for 10-36h, powering off, keeping ventilation, naturally cooling to room temperature, and stopping ventilation.
As a further preferable technical scheme, the volume ratio of the inert gas to the oxygen is 1:4, the air flow is 30ml/min, and the heat treatment process is divided into three sections: the annealing process comprises a heating stage, an annealing stage and a cooling stage, wherein the heating stage is heated to 400 ℃ at 4 ℃/min and is kept for 2 hours, and then heated to 800 ℃ at 0.8 ℃/min, the annealing stage is kept for 24 hours at 800 ℃, and the cooling stage is heated to 650 ℃ at 0.25 ℃/min and is kept for 24 hours.
As a preferable technical scheme, the method of the step (4) is as follows: placing the thick film on a nitric acid-acetic acid mixed acid solution, heating and boiling the thick film for 2 to 6 hours at the temperature of between 90 and 110 ℃, and then washing the surface of the thick film by using deionized water and absolute ethyl alcohol in sequence to finish the process.
As a further preferable technical scheme, the volume ratio of nitric acid to acetic acid is 1:3 when in acid cooking, the hot cooking temperature is 100 ℃, and the hot cooking time is 3 hours.
The invention provides a method for annealing ferrite single crystal thick film with stepped temperature rise and drop and temperature rise and drop rate needing accurate control under the mixed atmosphere of inert gas and oxygen, through which the Fe of the single crystal thick film can be controlled 2+ The concentration reduces electromagnetic loss while maintaining the gyromagnetic characteristic of the ferrite thick film, and simultaneously realizes effective release of internal stress of the crystal, avoids cracking of the thick film and improves the crystal processability and yield.
The invention has the advantages that: the ferrite single crystal thick film treated by the method has reduced dielectric loss, optical loss and ferromagnetic resonance line width, the surface is specular, no crack is generated, and the quality of the thick film is obviously improved.
Drawings
FIG. 1 is an appearance diagram and a destructive physical analysis thickness test diagram of example 17 of the present invention;
FIG. 2 is a graph showing the light transmittance test of example 17 of the present invention;
FIG. 3 is an XPS test pattern of example 17 of the present invention;
FIG. 4 is an XPS test pattern of comparative examples 1-4, in which: (a) is comparative example 1; (b) is comparative example 2; (c) is comparative example 3; (d) comparative example 4;
FIG. 5 is a single crystal thick film XRD contrast pattern for example 17 of the invention versus comparative example 1, wherein: a. YIG obtained in example 17; b. YIG obtained in comparative example 1; c. GGG.
Detailed Description
The invention will be further described with reference to the accompanying drawings.
Examples 1 to 17:
a high temperature annealing method of ferrite single crystal thick film comprises the following steps:
(1) Clamping a GGG substrate, then placing the GGG substrate in a mixed solvent of chloroform and normal ethane with the volume ratio of 3:1 for cleaning, then using phosphoric acid for activation, then using deionized water for cleaning, and finally using an air gun for blow-drying water stains for standby;
(2) Placing the cleaned GGG substrate into a liquid phase epitaxial furnace, preheating, setting the growth interval to 900-865 ℃, cooling at a speed of 0.5 ℃/min, rotating at a speed of 150r/min, and growing for 5 hours, and carrying out epitaxial growth on a YIG single crystal thick film, wherein the thickness of the obtained thick film is 100 mu m through destructive physical analysis;
(3) Placing the prepared ferrite single crystal thick film in an annealing furnace, introducing inert gas and oxygen mixed gas with the volume ratio of A into the annealing cavity, wherein the gas flow is B ml/min, and then executing a step-type temperature raising and lowering procedure: the temperature rising stage firstly rises to 400 ℃ at 4 ℃/min and keeps the temperature for 2 hours, then rises to C ℃ at 0.8 ℃/min, keeps the temperature for Dh, and falls to 650 ℃ at E ℃/min and keeps the temperature for 24 hours, and finally, the power and the gas are cut off and naturally cooled to the room temperature;
(4) And (3) placing the annealed thick film in a nitric acid-acetic acid mixed acid solution with the volume ratio of 1:3, boiling for 3 hours at 100 ℃, and then washing the surface of the thick film by using deionized water and absolute ethyl alcohol in sequence to obtain the YIG single crystal thick film.
The annealing conditions of the above examples were determined by orthogonal test to determine the optimal technical scheme, see table 1:
TABLE 1 examples 1-16 orthogonal test arrangement table
The line width Δh is tested by using a ferromagnetic resonance method to evaluate the electromagnetic performance of the YIG film, and the test result is shown in table 2, so as to obtain an optimal technical scheme A4B3C2D2E4, i.e. example 17, i.e. the process conditions of example 17 are as follows: ar: o (O) 2 (v/v), 1:1; air flow rate, 30 ml.min -1 The method comprises the steps of carrying out a first treatment on the surface of the Annealing temperature, 800 ℃; heat preservation time for 24 hours; cooling rate of 0.25 ℃ min -1 。
The appearance of the single crystal thick film prepared in example 17 and the destructive physical analysis thickness test chart are shown in fig. 1, the light transmittance test chart is shown in fig. 2, and the XPS test chart is shown in fig. 3.
Table 2 table of experimental results analysis of examples 1 to 16
Example 1 this comparative example was compared with the previous example 17, the step (3) was omitted, i.e., after epitaxial growth, directly subjected to mixed acid boiling and then washing.
Comparative example 2
In this comparative example, compared with the aforementioned example 17, in the step (3), the annealing atmosphere was air, and the remainder was the same as in example 17.
Comparative example 3
In this comparative example, compared with the above-mentioned example 17, in the step (3), the gradient temperature annealing was not performed, and the temperature was directly raised to 800℃and kept at that temperature for 24 hours, and then the temperature was naturally cooled to room temperature, and the rest was the same as in example 17.
Comparative example 4
In this comparative example, in comparison with the aforementioned example 17, the acid-boiling treatment was not performed in the step (4) and the rest was the same as in example 17.
The YIG single crystal thick films obtained in the foregoing examples 17 and comparative examples 1 to 4 were tested for their ferromagnetic resonance line width, dielectric loss, and optical transmittance by a ferromagnetic resonance method, a high-frequency resonance method, and a spectrophotometer, respectively, and the test results are shown in Table 3. XPS test was performed on the YIG thick film obtained in the previous example 17 and the YIG thick films of comparative examples 1-4, and peak spectrum areas were calculated by Fe2p3/2 spectral line peak-splitting fitting, which shows that Fe in the YIG thick film is obtained by the stepwise elevated temperature annealing treatment of the present invention 2+ The ion content is reasonable, as shown in figures 3 and 4.
Table 3 test results for example 17 and comparative example
XRD was performed on the YIG thick film prepared in example 17 and the YIG thick film prepared in comparative example 1, and the test results were as shown in FIG. 5, and the microstructure of the ferrite single crystal thick film obtained in example 17 according to the present invention was adjusted so that the lattice constant was comparable to that of the substrate.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the particular embodiments disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Claims (7)
1. The high-temperature annealing method for growing the ferrite single crystal thick film based on the liquid phase epitaxy method is characterized by comprising the following steps of:
(1) Cleaning and drying a gadolinium gallium garnet or calcium magnesium zirconium doped gadolinium gallium garnet substrate for standby;
(2) Placing the standby substrate in the step (1) into a liquid phase epitaxial furnace, preheating, and then carrying out epitaxial growth of a single crystal thick film;
(3) Annealing the single crystal thick film obtained in the step (2), wherein the annealing method is a step-type lifting heat treatment method, and the step-type lifting heat treatment method is as follows: introducing mixed gas of inert gas and oxygen with the volume ratio of 1:1-1:4 into the annealing cavity in advance, wherein the air flow is 10-40ml/min, and then executing a step-type temperature raising and reducing program: heating to 400 ℃ at 2-4 ℃/min, preserving heat for 2-4h, heating to 750-950 ℃ at 0.5-1.5 ℃/min, preserving heat for 12-48h for annealing, cooling to 600-700 ℃ at 0.25-1 ℃/min, preserving heat for 10-36h, and finally naturally cooling to room temperature after power and gas interruption;
(4) And (3) cleaning the annealed single-crystal thick film in the step (3) to finish the process.
2. The high temperature annealing method for growing ferrite single crystal thick films based on liquid phase epitaxy as claimed in claim 1, wherein in step (1), the method of cleaning and drying the substrate is as follows: the substrate is clamped, then placed in a mixed solvent for cleaning, then activated by mixed acid, then washed clean by deionized water, and finally dried by an air gun.
3. The high temperature annealing method for growing a ferrite single crystal thick film based on a liquid phase epitaxy method according to claim 1, wherein said epitaxial film is a garnet single crystal film.
4. The high temperature annealing method for growing a ferrite single crystal thick film based on a liquid phase epitaxy method according to claim 1, wherein the epitaxy growth conditions of step (2) are: the growth temperature range is 900-865 ℃, the cooling rate is 0.1-2 ℃/min, the rotating speed is 150r/min, the growth time is 0.5-72h, and the thickness of the thick film is 100-300 mu m.
5. The high temperature annealing method for growing ferrite single crystal thick film based on liquid phase epitaxy method according to claim 1, wherein in the step (3), the volume ratio of inert gas to oxygen is 1:4, the air flow is 30ml/min, and the heat treatment process is divided into three sections: the temperature raising stage is carried out at a speed of 4 ℃/min to a temperature of 400 ℃ and is kept at the temperature for 2 hours, and then is carried out at a speed of 0.8 ℃/min to a temperature of 800 ℃ and is kept at the temperature of 800 ℃ for 24 hours, and the temperature lowering stage is carried out at a speed of 0.25 ℃/min to a temperature of 650 ℃ and is kept at the temperature for 24 hours.
6. The high temperature annealing method for growing a ferrite single crystal thick film based on a liquid phase epitaxy method according to claim 1, wherein the method of step (4) is as follows: and (3) placing the thick film into a nitric acid-acetic acid mixed acid solution, heating and boiling the thick film for 2 to 6 hours at a temperature of between 90 and 110 ℃, and then washing the surface of the thick film by using deionized water and absolute ethyl alcohol in sequence to finish the process.
7. The high temperature annealing method for growing a ferrite single crystal thick film based on a liquid phase epitaxy method according to claim 6, wherein the volume ratio of nitric acid to acetic acid is 1:3 when the ferrite single crystal thick film is boiled with acid, the boiling temperature is 100 ℃, and the boiling time is 3 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210282043.8A CN114737248B (en) | 2022-03-22 | 2022-03-22 | High-temperature annealing method for growing ferrite single crystal thick film based on liquid phase epitaxy method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210282043.8A CN114737248B (en) | 2022-03-22 | 2022-03-22 | High-temperature annealing method for growing ferrite single crystal thick film based on liquid phase epitaxy method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114737248A CN114737248A (en) | 2022-07-12 |
| CN114737248B true CN114737248B (en) | 2023-06-02 |
Family
ID=82276729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210282043.8A Active CN114737248B (en) | 2022-03-22 | 2022-03-22 | High-temperature annealing method for growing ferrite single crystal thick film based on liquid phase epitaxy method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114737248B (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2904668B2 (en) * | 1993-02-10 | 1999-06-14 | 信越化学工業株式会社 | Garnet magnetic oxide single crystal for magnetostatic wave device, method for producing the same, and magnetostatic wave device |
| CN105887201B (en) * | 2016-05-31 | 2018-06-19 | 电子科技大学 | A kind of intermittent liquid-phase epitaxial growth method of monocrystalline garnets thick film |
| CN107022749A (en) * | 2017-03-20 | 2017-08-08 | 杭州电子科技大学 | A kind of method that utilization substep annealing technology prepares submicron order flawless ferrite film |
| CN111910252A (en) * | 2020-07-17 | 2020-11-10 | 中国电子科技集团公司第九研究所 | Large-size doped YIG single crystal thin film material and preparation method thereof |
-
2022
- 2022-03-22 CN CN202210282043.8A patent/CN114737248B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN114737248A (en) | 2022-07-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101148753A (en) | Yttrium-iron garnet thin film material and preparation method thereof | |
| CN105331942B (en) | Yttrium-iron garnet thin film material and preparation method thereof | |
| CN107146761B (en) | Preparation method of yttrium iron garnet/bismuth heterogeneous film with giant magneto-optical effect | |
| CN114737248B (en) | High-temperature annealing method for growing ferrite single crystal thick film based on liquid phase epitaxy method | |
| CN104831359A (en) | Submicron-scale low-loss single-crystal yttrium-iron-garnet film liquid-phase epitaxy preparation method | |
| CN114657631A (en) | Preparation method of bismuth-substituted rare earth iron garnet single crystal thick film | |
| WO2008091297A2 (en) | Method of manufacturing thick-film, low microwave loss, self-biased barium-hexaferrite having perpendicular magnetic anisotropy | |
| CN107022749A (en) | A kind of method that utilization substep annealing technology prepares submicron order flawless ferrite film | |
| TW543092B (en) | Heat-treating method of silicon wafer | |
| CN109183146B (en) | Method for eliminating surface defects of single crystal diamond seed crystal by utilizing inductive coupling plasma technology | |
| CN114318536B (en) | Bismuth-doped rare earth iron garnet single crystal film, preparation method thereof and optical device | |
| JP2007008759A (en) | Bismuth-substituted magnetic garnet film and its production method | |
| EP3666935A1 (en) | High-purity silicon carbide single crystal substrate and preparation method therefor | |
| CN113463196B (en) | Super-thick garnet single crystal film prepared by liquid phase epitaxy method and preparation method thereof | |
| CN115094511B (en) | Method for homoepitaxial growth of garnet type ferrite single crystal thick film | |
| CN110172734B (en) | Cubic phase doped cerium ferrite magneto-optical material and preparation method and application thereof | |
| CN103714942B (en) | A kind of automatic biasing heterogeneous body microwave ferromagnetic thin film material and preparation method thereof | |
| CN110846629A (en) | YIG film material-based microwave absorber and preparation method thereof | |
| CN112216507A (en) | Preparation method and application of unsupported high-performance ferrite magnetic film | |
| CN117684256A (en) | Method for solving cracking problem of ferrite single crystal film material prepared by heteroepitaxial method | |
| CN114686983B (en) | Preparation method of garnet-phase doped magneto-optical and nonlinear optical material | |
| RU2791730C1 (en) | Method for obtaining single-crystal films of yttrium iron garnet with zero mismatch between the parameters of the crystal lattice of the film and substrate | |
| CN111733450B (en) | Method for improving thickness uniformity of large-size garnet single crystal film by liquid phase epitaxy and single crystal film prepared by method | |
| CN115323494A (en) | Rare earth doped yttrium iron garnet single crystal film, preparation method and application thereof | |
| CN116575120B (en) | Novel high-power magneto-optical crystal and growth method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |