CN114725251A - Quantum dot solution injection method, light color conversion structure and light emitting chip - Google Patents
Quantum dot solution injection method, light color conversion structure and light emitting chip Download PDFInfo
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- 238000002347 injection Methods 0.000 title claims abstract description 29
- 239000007924 injection Substances 0.000 title claims abstract description 29
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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Abstract
The invention discloses a quantum dot solution injection method, which comprises the steps of firstly carrying out pretreatment operation on a porous structure, removing water vapor of the porous structure and cleaning stains on the surface and/or in holes of the porous structure, so that the quantum dot solution can better permeate into the holes, then arranging the quantum dot solution on the surface of the porous structure, which is exposed out of the holes, and vacuumizing to ensure that the environment of the porous structure is a vacuum environment. Meanwhile, the invention also provides a light color conversion structure and a light emitting chip which adopt the injection method to inject the quantum dot solution.
Description
Technical Field
The invention relates to the technical field of display, in particular to a quantum dot solution injection method, a light color conversion structure and a light emitting chip.
Background
Quantum Dot (QD) materials have the characteristics of high color purity, adjustable luminescent color, high fluorescence quantum yield and the like due to excellent photoelectric characteristics, and at present, display application of quantum dot materials is mainly based on the color conversion characteristics of the QD materials.
Currently, one of the ways to achieve red (green) emission using blue light as excitation source is: removing the sapphire substrate of the original blue LED by a Laser Lift Off (LLO) technology, and then bonding the sapphire substrate with quantum dots with the original blue LED from which the sapphire substrate is removed to convert the blue light into red (green) light; the second way is that: in the process of manufacturing the red (green) light LED, a hole is formed on an epitaxial layer for manufacturing the blue light LED, and the quantum dots are filled into the hole to realize red (green) light emitting.
To realize the light color conversion function, quantum dots are required to be filled into the holes of the sapphire substrate/LED epitaxial layer. In the prior art, a quantum dot solution containing quantum dots is generally injected into holes in a natural leveling mode such as dot, coating and ink-jet printing, the injection efficiency of the quantum dot solution is low, and the quantum dot solution in the holes is not sufficiently injected, so that the phenomena of nonuniform color conversion, blue light leakage and the like are caused.
Disclosure of Invention
The invention aims to provide a quantum dot solution injection method, a light color conversion structure and a light emitting chip, which can fully inject quantum dot solution into a hole.
In order to achieve the above object, the present invention provides a quantum dot solution injection method, including:
providing a quantum dot solution containing quantum dots and a porous structure having pores for filling the quantum dot solution;
pre-treating the porous structure, the pre-treating comprising: drying the porous structure, and/or cleaning stains on the surface of the porous structure and/or in the holes;
arranging quantum dot solution on the surface of the porous structure exposed out of the holes, and vacuumizing to enable the environment of the porous structure to be a vacuum environment so that the quantum dot solution can be conveniently infiltrated into the holes;
keeping vacuum for a preset time;
and curing the quantum dot solution infiltrated into the holes.
In some embodiments, the drying the porous structure comprises: and baking the porous structure at a first temperature for a first time period in a vacuum environment, and drying the water vapor in the porous structure.
In some embodiments, said cleaning stains on the surface of said porous structure and/or within said pores comprises: and placing the porous structure in a plasma environment for a second time period, and cleaning stains on the surface of the porous structure and in the holes by using the plasma.
In some embodiments, the disposing a quantum dot solution on the surface of the porous structure exposing the pores comprises: and adding a quantum dot solution to a local area of the surface of the porous structure exposed out of the hole, and then diffusing and spreading the quantum dot solution of the local area to the surface of the porous structure exposed out of the hole through a spin coating process.
In some embodiments, the disposing a quantum dot solution on the surface of the porous structure exposed from the pores, and the evacuating the porous structure to make the porous structure in a vacuum environment includes: arranging quantum dot solution on the surface of the porous structure, which is exposed out of the holes, vacuumizing to enable the environment of the porous structure to be in a first vacuum degree, and keeping the first vacuum degree for a third time; or vacuumizing to enable the environment of the porous structure to be in a second vacuum degree, then arranging quantum dot solution on the surface of the porous structure, which is exposed out of the holes, and keeping the environment of the porous structure in the second vacuum degree for a fourth time.
In some embodiments, the disposing a quantum dot solution on the surface of the porous structure exposed from the pores, and the evacuating the porous structure to make the porous structure in a vacuum environment includes: arranging quantum dot solution on the surface of the porous structure exposed out of the holes; vacuumizing to enable the environment of the porous structure to be at a third vacuum degree, and keeping the third vacuum degree for a fifth time; releasing the vacuum; and repeating the operations of vacuumizing and releasing the vacuum.
In some embodiments, the curing the quantum dot solution infiltrated into the pores comprises: and baking the porous structure at the second temperature for a sixth time period in a vacuum environment, and drying the solvent of the quantum dot solution in the porous structure.
In some embodiments, after the curing the quantum dot solution infiltrated into the hole, further comprising: and cleaning the quantum dot solution remained on the surface of the porous structure by using a cleaning agent.
In order to achieve the above object, the present invention further provides a light color conversion structure disposed on a light emitting surface of a light emitting chip to convert light emitted from the light emitting chip into a target light color, wherein the light color conversion structure adopts the quantum dot solution injection method as described above to inject the quantum dot solution.
In order to achieve the above object, the present invention further provides a light emitting chip, wherein the light emitting chip is injected with the quantum dot solution by the quantum dot solution injection method, the porous structure includes a growth substrate and an epitaxial layer grown on the growth substrate, and the epitaxial layer has the holes.
Compared with the prior art, the method has the advantages that firstly, the porous structure is pretreated, water vapor of the porous structure is removed, stains on the surface and/or in the holes of the porous structure are cleaned, the quantum dot solution can better permeate into the holes, then, the quantum dot solution is arranged on the surface of the porous structure with the exposed holes, the environment where the porous structure is located is a vacuum environment through vacuumizing, gas in the holes can be pumped out through vacuumizing, the quantum dot solution can conveniently permeate into the holes, the quantum dot solution can be fully injected into each hole, light leakage is avoided, a good color conversion effect is obtained, and meanwhile, gas in the quantum dot solution can be pumped out while vacuumizing is conducted, and a light color conversion structure with better performance is obtained.
Drawings
FIG. 1 is a top view of a porous structure according to one embodiment of the present invention;
FIG. 2 is a side view of a porous structure according to one embodiment of the present invention;
FIG. 3 is a schematic diagram of a quantum dot solution injection process according to an embodiment of the present invention;
FIG. 4 is a top view of a porous structure after being infused with a quantum dot solution in accordance with one embodiment of the present invention;
FIG. 5 is a side view of a porous structure after being infused with a quantum dot solution in accordance with one embodiment of the present invention;
fig. 6 is a schematic diagram of a quantum dot solution injection process according to another embodiment of the present invention;
fig. 7 is a side view of a porous structure after being impregnated with a quantum dot solution according to another embodiment of the present invention.
Detailed Description
In order to explain the contents, structural features, objects and effects of the present invention in detail, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "inside", "outside", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, and thus, are not to be construed as limiting the scope of the present invention.
The technical scheme of the embodiment of the invention is explained in detail below with reference to the attached drawings:
example one
The present embodiment provides a quantum dot solution injection method, which is used for quantum dot injection in a light color conversion structure to realize conversion of light emitted by an LED chip into a target light color, for example, a blue LED chip is adopted, and a light color conversion structure is disposed on a light emitting surface of the blue LED chip to realize emission of red light, green light, and the like by the blue LED chip.
Referring to fig. 1 to 5, the quantum dot solution injection method provided in the present embodiment includes the following steps S1 to S7.
S1, providing a quantum dot solution containing quantum dots and a porous structure 2 having pores 1 for filling the quantum dot solution.
As shown in fig. 1 and 2, the porous structure 2 may be a sheet structure having a plurality of holes 1, such as a sapphire substrate having a plurality of holes, and after quantum dot solution is injected into the holes 1 of the porous structure 2, the porous structure 2 may be disposed on a light emitting surface of an LED chip to convert light emitted by the LED chip into target light color, for example, blue light emitted by the LED chip is converted into red light, and quantum dots are quantum dots which can be converted into red light after being excited by the blue light.
S2, baking the porous structure 2 in a vacuum environment at a first temperature for a first time, and drying the water vapor in the porous structure 2. And the baking ensures that no residual water vapor exists in the holes 1. Because the size of the hole 1 is extremely small, usually several hundred nanometers to several micrometers, if gas exists in the hole 1, the quantum dot solution can be prevented from being injected into the hole 1, so that the quantum dot solution is not injected sufficiently, the gas in the hole 1 can be pumped away by baking the porous structure 2 in a vacuum environment, and the quantum dot solution can be favorably permeated into the hole 1 in the subsequent step.
Wherein the first temperature can be 80-90 ℃ and the first time period can be 15-30 minutes, so as to ensure that the water vapor in the porous structure 2 can be dried without damaging the porous structure 2.
S3, placing the porous structure 2 in a plasma environment for a second time, and cleaning stains on the surface of the porous structure 2 and in the holes 1 through the plasma, so that the quantum dot solution can better penetrate into the holes 1 in the subsequent steps.
Wherein, the plasma can be generated by argon and oxygen, and the volume ratio of the argon to the oxygen can be Ar to O2> 7:3, when a relatively inert material is used for the porous structure 2, e.g. gallium nitride, Ar/O2The surface of the porous structure 2 may be subjected toAnd (4) activating. In some embodiments, the plasma may also be generated by argon and hydrogen. The second period of time may be 5-15 minutes, and in some embodiments, may be specifically 6-7 minutes if only to achieve stain cleaning, and may be further increased, for example 12 minutes, if surface activation of the porous structure 2 is also to be achieved.
S4, disposing the quantum dot solution 3 on the surface of the porous structure 2 exposed from the pores 1, taking the angle shown in fig. 2 as an example, the surface of the porous structure 2 exposed from the pores 1 is the upper surface of the porous structure 2.
In this embodiment, the quantum dot solution 3 is added to a local region of the surface of the porous structure 2 where the pores 1 are exposed, for example, the quantum dot solution 3 is dropped at an intermediate position of the surface, as shown in fig. 3 (b); then, the porous structure 2 is placed in a spin coater 4, as shown in fig. 3 (c), the quantum dot solution 3 in a local area is uniformly spread on the surface of the porous structure 2 exposed by the pores 1 by a spin coating process, and the distribution of the quantum dot solution 3 on the surface of the porous structure 2 after the spin coating process is shown in fig. 3 (d).
S5, placing the porous structure 2 into the vacuum chamber 5, as shown in fig. 3 (d), vacuumizing to a first vacuum degree, and maintaining the first vacuum degree for a third time period. In a vacuum environment, the gas in the hole 1 is pumped away, and the quantum dot solution 3 is more likely to permeate into the hole 1, and meanwhile, the gas in the quantum dot solution can also be pumped away, so that a light color conversion structure with better performance is obtained, and the porous structure 2 after the quantum dot solution 3 is injected is shown in fig. 4 and 5.
Wherein, the first vacuum degree can be less than-100 kPa, the-100 kPa is common low vacuum, the quantum dot solution 3 can be promoted to be injected into the hole 1 when the first vacuum degree is less than-100 kPa, and the injection effect of the quantum dot solution 3 is better when the first vacuum degree is less than-100 kPa. The third time period may be 5-15 minutes, specifically, until the holes 1 can be sufficiently injected into the quantum dot solution.
And S6, baking the porous structure 2 in a vacuum environment at the second temperature for a sixth time, and drying the solvent of the quantum dot solution in the porous structure 2.
The second temperature can be 80-90 ℃, and the quantum dot failure caused by too high temperature can be avoided while the solvent of the quantum dot solution is dried. The sixth time period can be 15-30 minutes, so that the situation that the solvent of the quantum dot solution is not completely volatilized when the baking time is too short is avoided, and the quantum dot is not failed due to too long baking time is ensured.
S7, washing the quantum dot solution remained on the surface of the porous structure 2 with a detergent, such as toluene or octane.
In addition, in some embodiments, after step S7, a protection layer covering the holes 1 may be further formed on the exposed surfaces of the holes 1 of the porous structure 2, for example, an aluminum oxide protection layer is deposited by ald (atomic layer deposition) to protect the quantum dots in the holes 1.
Example two
Referring to fig. 6, unlike the first embodiment, in this embodiment, the sequence of the vacuum pumping and the quantum dot solution arrangement on the surface of the porous structure 2 is changed, and the steps S01 to S03 are replaced with the steps S4 and S5, and the following steps S01, S02 and S03 are sequentially performed:
s01, the porous structure 2 is placed in the vacuum chamber 5, and as shown in fig. 6 (b), vacuum is applied to a second degree of vacuum.
S02, quantum dot solution 3 is disposed on the surface of porous structure 2 exposed from pores 1.
And S03, keeping the second vacuum degree for a fourth time to fully inject the hole 1 into the quantum dot solution 3.
In this embodiment, the quantum dot solution 3 is dropped on the local area of the surface of the porous structure 2 exposed to the pores 1, and then the quantum dot solution 3 in the local area is uniformly spread on the surface of the porous structure 2 exposed to the pores 1 by the spin coating process, and the distribution of the quantum dot solution 3 on the surface of the porous structure 2 after the spin coating process is shown in fig. 6 (d). The fourth time period is likewise 5 to 15 minutes. The second vacuum is also less than-100 kPa.
As in the first embodiment, the specific injection process of the quantum dot solution may refer to the description in the first embodiment, and will not be described herein again.
EXAMPLE III
Unlike the first embodiment, in this embodiment, the above step S5 is replaced with the following steps S51 to S56:
s51, placing the porous structure 2 into a vacuum cavity, vacuumizing to a third vacuum degree, and keeping the third vacuum degree for a fifth time.
And S52, releasing the vacuum.
And S53, vacuumizing again to a fourth vacuum degree, and keeping the fourth vacuum degree for a seventh time.
And S54, releasing the vacuum.
And S55, vacuumizing again to the fifth vacuum degree, and keeping the fifth vacuum degree for the eighth time.
And S56, releasing the vacuum.
Wherein the third vacuum, the fourth vacuum, and the fifth vacuum may be the same, e.g., less than-100 kPa; the fifth, seventh, and eighth time periods may be the same, e.g., 4 minutes, 5 minutes. After releasing the vacuum, the gas in the vacuum cavity can give the quantum dot solution to the effort in hole 1, helps the quantum dot solution to permeate hole 1, and under the vacuum state, can take out the gas in hole 1 and the quantum dot solution, through many times evacuation with release the vacuum, the injection effect of quantum dot solution is better, efficiency is higher.
In this embodiment, the vacuum pumping/evacuating is performed three times, and in some embodiments, the vacuum pumping/evacuating may also be performed three or more times, that is, after step S56, the vacuum pumping and evacuating operations may also be performed again.
As in the first embodiment, the specific injection process of the quantum dot solution may refer to the description in the first embodiment, and will not be described herein again.
Example four
The quantum dot solution injection method provided in this embodiment is used as a part of a manufacturing process of a light emitting chip, and is used for filling quantum dots in the light emitting chip, so that the light emitting chip can emit target light color by using the quantum dots, and thus, a red LED chip can be manufactured on the basis of, for example, a gallium nitride epitaxial layer.
Different from the first, second and third embodiments, in this embodiment, the porous structure 2 includes a growth substrate 21 and a part of the epitaxial layer grown on the growth substrate 21 to fabricate the light emitting chip, and the part of the epitaxial layer has the holes 1, as shown in fig. 7. The quantum dot solution is injected into the holes 1 of part of the epitaxial layer, and then other composition structures of the light-emitting chip are further manufactured, so that the light-emitting chip capable of emitting the target light color is obtained.
The growth substrate 21 may be a sapphire substrate or the like, a part of the epitaxial layers include a buffer layer 22, an intrinsic semiconductor layer 23, an N-type epitaxial layer 24, a light emitting layer 25 and a P-type epitaxial layer 26, holes 1 are formed in the P-type epitaxial layer 26, the light emitting layer 25 and even the N-type epitaxial layer 24, quantum dot solution is injected into the holes 1, and then a P-type electrode 27 and an N-type electrode 28 are further fabricated, as shown in fig. 7, to form a complete light emitting chip. The light emitting chip in the figure is exemplified by a front-mounted structure, and in an actual application process, the light emitting chip can also be a light emitting chip with a flip-chip structure and a vertical structure.
In the same manner as in the first, second, and third embodiments, the specific injection process of the quantum dot solution may refer to the description in the first embodiment, and will not be described herein again.
In summary, the invention firstly performs a pretreatment operation on the porous structure 2, removes water vapor of the porous structure 2, cleans stains on the surface of the porous structure 2 and in the holes 1, and makes the quantum dot solution better permeate into the holes 1, then arranges the quantum dot solution on the surface of the porous structure 2 exposed out of the holes 1, and vacuumizes to make the environment of the porous structure 2 a vacuum environment, and can extract gas in the holes 1 through vacuumization, so that the quantum dot solution 3 permeates into the holes 1, and each hole 1 can be fully injected with the quantum dot solution, thereby avoiding light leakage and obtaining a good color conversion effect.
The above disclosure is only a preferred embodiment of the present invention, and should not be taken as limiting the scope of the invention, so that the appended claims are intended to cover all such modifications and changes as fall within the true spirit of the invention.
Claims (10)
1. A quantum dot solution injection method is characterized by comprising the following steps:
providing a quantum dot solution containing quantum dots and a porous structure having pores for filling the quantum dot solution;
pre-treating the porous structure, the pre-treating comprising: drying the porous structure, and/or cleaning stains on the surface of the porous structure and/or in the holes;
arranging quantum dot solution on the surface of the porous structure exposed out of the holes, and vacuumizing to enable the environment of the porous structure to be a vacuum environment so that the quantum dot solution can be conveniently infiltrated into the holes;
keeping vacuum for a preset time;
and curing the quantum dot solution infiltrated into the holes.
2. The quantum dot solution injection method according to claim 1, wherein the drying the porous structure comprises:
and baking the porous structure at a first temperature for a first time period in a vacuum environment, and drying the water vapor in the porous structure.
3. The quantum dot solution injection method according to claim 1, wherein the cleaning of the stains on the surface of the porous structure and/or within the pores comprises:
and placing the porous structure in a plasma environment for a second time period, and cleaning stains on the surface of the porous structure and in the holes by using the plasma.
4. The quantum dot solution injection method according to claim 1, wherein the disposing a quantum dot solution on the surface of the porous structure where the pores are exposed comprises:
and adding a quantum dot solution to a local area of the surface of the porous structure, which is exposed out of the hole, and then spreading the quantum dot solution of the local area to the surface of the porous structure, which is exposed out of the hole, by a spin coating process.
5. The method of claim 1, wherein the disposing the quantum dot solution on the surface of the porous structure exposed by the pores, and the evacuating the porous structure to form a vacuum environment comprises:
arranging quantum dot solution on the surface of the porous structure, which is exposed out of the holes, vacuumizing to enable the environment of the porous structure to be in a first vacuum degree, and keeping the first vacuum degree for a third time; or the like, or, alternatively,
and vacuumizing to enable the environment of the porous structure to be in a second vacuum degree, then arranging quantum dot solution on the surface of the porous structure, which is exposed out of the holes, and keeping the environment of the porous structure in the second vacuum degree for a fourth time.
6. The method of claim 1, wherein the disposing the quantum dot solution on the surface of the porous structure exposed by the pores, and the evacuating the porous structure to form a vacuum environment comprises:
arranging quantum dot solution on the surface of the porous structure exposed out of the holes;
vacuumizing to enable the environment of the porous structure to be at a third vacuum degree, and keeping the third vacuum degree for a fifth time;
releasing vacuum;
and repeating the operations of vacuumizing and releasing the vacuum.
7. The quantum dot solution injection method of claim 1, wherein the curing the quantum dot solution infiltrated into the pores comprises:
and baking the porous structure for a sixth time at the second temperature in a vacuum environment, and drying the solvent of the quantum dot solution in the porous structure.
8. The quantum dot solution injection method according to claim 1, further comprising, after the curing the quantum dot solution infiltrated into the pores:
and cleaning the quantum dot solution remained on the surface of the porous structure by using a cleaning agent.
9. A light color conversion structure, configured to be disposed on a light emitting surface of a light emitting chip to convert light emitted from the light emitting chip into a target light color, wherein the light color conversion structure is injected with a quantum dot solution according to any one of claims 1 to 8 by using the quantum dot solution injection method.
10. A light emitting chip, wherein the light emitting chip is injected with a quantum dot solution by the quantum dot solution injection method according to any one of claims 1 to 8, and the porous structure comprises a growth substrate and an epitaxial layer grown on the growth substrate, wherein the epitaxial layer has the holes.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006051576A (en) * | 2004-08-12 | 2006-02-23 | National Institute For Materials Science | Solid particle filling method and nano-structure fabricated by the filling method |
| WO2017197392A1 (en) * | 2016-05-13 | 2017-11-16 | Osram Sylvania Inc. | Wavelength converters including a porous matrix, lighting devices including the same, and methods of forming the same |
| CN107565007A (en) * | 2017-09-19 | 2018-01-09 | 南昌航空大学 | A kind of stable white light LED preparation method |
| CN108774511A (en) * | 2018-05-31 | 2018-11-09 | 兰州大学 | The preparation of full-inorganic perovskite quantum dot/mesoporous MOF-5 composite luminescent materials and application in the led |
| CN109705853A (en) * | 2019-03-01 | 2019-05-03 | 惠科股份有限公司 | Quantum dot layer and preparation method thereof |
| JP2020025941A (en) * | 2018-08-17 | 2020-02-20 | 地方独立行政法人東京都立産業技術研究センター | Photocatalyst and method of manufacturing the same |
| CN111081853A (en) * | 2020-01-07 | 2020-04-28 | 纳晶科技股份有限公司 | LED assembly, quantum dot LED luminous element, quantum dot LED packaging structure and display device |
| CN112768587A (en) * | 2021-01-20 | 2021-05-07 | 中国科学院长春光学精密机械与物理研究所 | Quantum dot color conversion layer and preparation method thereof |
| CN114058367A (en) * | 2021-12-17 | 2022-02-18 | 兰州大学 | Perovskite quantum dot and mesoporous silica composite luminescent material and preparation thereof |
-
2022
- 2022-03-04 CN CN202210214114.0A patent/CN114725251A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006051576A (en) * | 2004-08-12 | 2006-02-23 | National Institute For Materials Science | Solid particle filling method and nano-structure fabricated by the filling method |
| WO2017197392A1 (en) * | 2016-05-13 | 2017-11-16 | Osram Sylvania Inc. | Wavelength converters including a porous matrix, lighting devices including the same, and methods of forming the same |
| CN107565007A (en) * | 2017-09-19 | 2018-01-09 | 南昌航空大学 | A kind of stable white light LED preparation method |
| CN108774511A (en) * | 2018-05-31 | 2018-11-09 | 兰州大学 | The preparation of full-inorganic perovskite quantum dot/mesoporous MOF-5 composite luminescent materials and application in the led |
| JP2020025941A (en) * | 2018-08-17 | 2020-02-20 | 地方独立行政法人東京都立産業技術研究センター | Photocatalyst and method of manufacturing the same |
| CN109705853A (en) * | 2019-03-01 | 2019-05-03 | 惠科股份有限公司 | Quantum dot layer and preparation method thereof |
| CN111081853A (en) * | 2020-01-07 | 2020-04-28 | 纳晶科技股份有限公司 | LED assembly, quantum dot LED luminous element, quantum dot LED packaging structure and display device |
| CN112768587A (en) * | 2021-01-20 | 2021-05-07 | 中国科学院长春光学精密机械与物理研究所 | Quantum dot color conversion layer and preparation method thereof |
| CN114058367A (en) * | 2021-12-17 | 2022-02-18 | 兰州大学 | Perovskite quantum dot and mesoporous silica composite luminescent material and preparation thereof |
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