CN114725241A - Photoelectric packaging structure and preparation method thereof - Google Patents
Photoelectric packaging structure and preparation method thereof Download PDFInfo
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- CN114725241A CN114725241A CN202210354739.7A CN202210354739A CN114725241A CN 114725241 A CN114725241 A CN 114725241A CN 202210354739 A CN202210354739 A CN 202210354739A CN 114725241 A CN114725241 A CN 114725241A
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- 238000001746 injection moulding Methods 0.000 claims abstract description 97
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 239000000463 material Substances 0.000 claims abstract description 78
- 238000002347 injection Methods 0.000 claims abstract description 67
- 239000007924 injection Substances 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims description 25
- 230000005693 optoelectronics Effects 0.000 claims description 24
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0239—Combinations of electrical or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a photoelectric packaging structure and a preparation method thereof. The photoelectric packaging structure comprises: a base including a first injection port and a second injection port extending through the base; the light emitting chip and the light receiving chip are jointed on the substrate, wherein the first injection molding opening is completely positioned under the light emitting chip, and the second injection molding opening is completely positioned under the light receiving chip; a transparent cover plate bonded on the light emitting chip and the light receiving chip to form an overhead space between the transparent cover plate and the substrate, wherein the transparent cover plate comprises an opening arranged between the light emitting chip and the light receiving chip, and the opening is communicated with the overhead space; and a black resin material filling the overhead space and the opening. To achieve light shielding between the light emitting and light receiving chips while achieving thermal balance between the two chips.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to a photoelectric packaging structure and a preparation method thereof.
Background
The photoelectric detection device is used for detecting an object by utilizing a photoelectric conversion effect, and comprises a light emitting chip for emitting light and reflecting the light when encountering the object on one hand, and a light receiving chip for receiving the reflected light and converting an optical signal into an electric signal to realize the optical detection of the object on the other hand.
In current photoelectric detection device, it often carries out integrated package with transmitting chip and light receiving chip, and transmitting chip and light receiving chip's distance is nearer, and transmitting chip's emergent light can direct irradiation to light receiving chip, and like this, light receiving chip's noise is great, when the detection environment that requires is surveyed to the high accuracy in the face, can cause the signal of surveying unstable.
In order to solve the above problems, the existing package is often directly provided with a partition board or a fence for optical isolation, and such a package structure is complex and high in cost, and temperature difference can be generated between the light emitting chip and the light receiving chip due to isolation, which is not favorable for the reliability of the package structure.
Disclosure of Invention
One of the objectives of the present invention is to overcome the defects in the prior art, and to provide a method for manufacturing an optoelectronic package structure, which optimizes the process steps and realizes fast heat dissipation balance.
In order to achieve the above purpose, the invention provides the following technical scheme:
the preparation method of the photoelectric packaging structure is characterized by comprising the following steps:
s1, providing a substrate, wherein the substrate comprises a first injection molding opening and a second injection molding opening which penetrate through the substrate;
s2, bonding a light emitting chip and a light receiving chip on the substrate, wherein the first injection molding opening is completely positioned right below the light emitting chip, and the second injection molding opening is completely positioned right below the light receiving chip;
s3, adhering a transparent cover plate on the light emitting chip and the light receiving chip to form an overhead space between the transparent cover plate and the substrate, wherein the transparent cover plate comprises an opening arranged between the light emitting chip and the light receiving chip, and the opening is communicated with the overhead space;
s4, filling black resin materials into the overhead space through the first injection molding port and the second injection molding port, wherein the black resin materials fill the overhead space and the opening.
Specifically, the black resin material includes a matrix resin, a black dye, and an inorganic filler including heat-dissipating inorganic particles.
Specifically, step S4 specifically includes: providing an injection mold, wherein the injection mold comprises a notch, and the bottom of the notch is provided with a first through hole and a second through hole which are communicated with an injection molding device; embedding the structure obtained in the step S3 in the notch, so that the first through hole is communicated with the first injection molding opening, the second through hole is communicated with the second injection molding opening, and the side surface of the overhead space is sealed by the side wall of the notch; injecting glue to the first injection molding opening and the second injection molding opening through the first through hole and the second through hole simultaneously to form a black resin material for filling the overhead space and the opening.
Specifically, an adhesive layer is adhered below the transparent cover plate, and the transparent cover plate is adhered to the light emitting chip and the light receiving chip through the adhesive layer.
According to the above preparation method, the present invention also provides a photoelectric packaging structure, comprising:
a base including a first injection port and a second injection port extending through the base;
the light emitting chip and the light receiving chip are jointed on the substrate, wherein the first injection molding opening is completely positioned under the light emitting chip, and the second injection molding opening is completely positioned under the light receiving chip;
a transparent cover plate bonded on the light emitting chip and the light receiving chip to form an overhead space between the transparent cover plate and the substrate, wherein the transparent cover plate comprises an opening arranged between the light emitting chip and the light receiving chip, and the opening is communicated with the overhead space;
and a black resin material filling the overhead space and the opening.
In another embodiment, the present invention further provides another method for manufacturing an optoelectronic package structure, which includes the following steps:
s1, providing a substrate, wherein the substrate comprises a first injection molding opening and a second injection molding opening which penetrate through the substrate;
s2, bonding a light emitting chip and a light receiving chip on the substrate, wherein the first injection molding opening is completely positioned right below the light emitting chip, and the second injection molding opening is completely positioned right below the light receiving chip;
s3, simultaneously applying a black resin material to the substrate through the first injection molding port and the second injection molding port, the black resin material covering at least a part of the side surfaces of the light emitting chip and the light receiving chip and forming a raised portion between the light emitting chip and the light receiving chip, the raised portion having a height greater than that of the light emitting chip and the light receiving chip;
s4, covering a transparent resin layer on the light emitting chip and the light receiving chip and the black resin material.
Specifically, the black resin material includes a matrix resin, a black dye, and an inorganic filler including heat-dissipating inorganic particles.
Specifically, step S3 specifically includes: providing an injection mold, wherein the injection mold comprises a notch, and the bottom of the notch is provided with a first through hole and a second through hole which are communicated with an injection molding device; embedding the structure obtained in the step S2 into the notch, so that the first through hole is communicated with the first injection molding opening, and the second through hole is communicated with the second injection molding opening; injecting glue to the first injection molding opening and the second injection molding opening through the first through hole and the second through hole simultaneously so as to apply black resin materials.
Specifically, when viewed from above, the first injection molding opening is deviated from the center of the light emitting chip and is close to the light receiving chip; the second injection molding opening is deviated from the center of the light receiving chip and close to the light emitting chip.
According to the above preparation method, the present invention also provides a photoelectric packaging structure, comprising:
a base including a first injection port and a second injection port extending through the base;
the light emitting chip and the light receiving chip are jointed on the substrate, wherein the first injection molding opening is completely positioned under the light emitting chip, and the second injection molding opening is completely positioned under the light receiving chip;
the black resin material is arranged on the substrate, at least covers partial side surfaces of the light emitting chip and the light receiving chip, a raised part is formed between the light emitting chip and the light receiving chip, and the height of the raised part is greater than that of the light emitting chip and the light receiving chip;
and a transparent resin layer covering the light emitting chip and the light receiving chip and the black resin material.
Compared with the prior art, the invention has the following beneficial effects:
in the method for manufacturing the optoelectronic package structure according to an embodiment of the present invention, a transparent cover plate having an opening is covered on the light emitting and receiving chip in advance, and a black resin material is filled through an injection molding opening in the substrate, and particularly, the opening of the transparent cover plate is filled with the black resin material to achieve light shielding of the light emitting and receiving chip.
Another embodiment of the present invention provides a method for manufacturing an optoelectronic package structure, wherein the filling of the black resin material is performed by two injection molding ports in the substrate, which are offset from the center of the chip, to obtain the black resin material with a middle bump, and particularly, the height of the black resin material is greater than that of the light emitting and receiving chip to achieve the light shielding of the light emitting and receiving chip
Further, the injection molding opening of the substrate in the embodiment of the invention is formed in advance, and the bonding step of the light emitting chip and the light receiving chip is performed before, so that the black resin material can be fully contacted with the back surfaces of the light emitting chip and the light receiving chip, the quick heat conduction of the black resin material and the light emitting chip and the light receiving chip is realized, and the internal heat balance is ensured.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a cross-sectional view (a) and a top view (B) of an optoelectronic package structure according to a first embodiment of the present invention;
fig. 2-5 are schematic flow charts illustrating a method for fabricating a photoelectric packaging structure according to a first embodiment of the present invention;
FIG. 6 is a cross-sectional view (A) and a top view (B) of an optoelectronic package structure in accordance with a second embodiment of the present invention;
fig. 7-10 are schematic flow charts illustrating a method for fabricating a photoelectric packaging structure according to a second embodiment of the present invention.
Description of reference numerals:
100/200, a substrate; 101/201, a first injection molding opening; 102/202, a second injection molding opening; 103/203, a light emitting chip; 104/204, first solder balls; 105/205, a light receiving chip; 106/206, second solder balls; 107. cover plate glass; 108. an adhesive layer; 109. an opening; 110/207, black resin material; 111/211, injection molding; 112/212, a first via; 113/213, a second via; 208. a raised portion; 209. a transparent resin layer.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
First embodiment
The embodiment provides an optoelectronic package structure, specifically including: a base including a first injection port and a second injection port extending through the base; the light emitting chip and the light receiving chip are jointed on the substrate, wherein the first injection molding opening is completely positioned under the light emitting chip, and the second injection molding opening is completely positioned under the light receiving chip; a transparent cover plate bonded on the light emitting chip and the light receiving chip to form an overhead space between the transparent cover plate and the substrate, wherein the transparent cover plate comprises an opening arranged between the light emitting chip and the light receiving chip, and the opening is communicated with the overhead space; and a black resin material filling the overhead space and the opening.
Referring to fig. 1, fig. 1 (a) is a cross-sectional view of the optoelectronic package structure, and (B) is a top view of the optoelectronic package structure. The substrate 100 may be a rigid support material having a wiring layer (not shown), among other things. The substrate 100 may be a glass substrate, a ceramic substrate, a semiconductor substrate, a PCB circuit board, or the like.
Specifically, the substrate 100 is pre-formed with injection molding gates, i.e., includes a first injection molding gate 101 and a second injection molding gate 102. The first injection port 101 and the second injection port 102 are openings penetrating the substrate 100. In this embodiment, the first nozzle 101 may include a plurality of discontinuous openings or one elongated opening as shown in fig. 1 (B), and similarly, the second nozzle 102 may have a shape corresponding to the shape of the first nozzle 101 and may be symmetrically disposed.
A light-emitting chip 103 and a light-receiving chip 105 are bonded on the substrate 100, wherein the light-emitting chip 103 is bonded on the substrate 100 through a plurality of first solder balls 104, and the light-receiving chip 105 is bonded on the substrate 100 through a plurality of second solder balls 106. In particular, the light emitting chip 103 spans over the first injection port 101 and completely covers the first injection port 101, and the first solder balls 104 may surround the first injection port 101, so as to ensure the electrical insulation of the first solder balls 104 and ensure the back surface of the light emitting chip 103 is completely filled with the subsequent black resin material 110, thereby ensuring the thermal bonding property. Similarly, the light receiving chip 105 spans the second injection port 102 and completely covers the second injection port 102, and the second solder balls 106 can surround the second injection port 102, so as to ensure electrical insulation of the second solder balls 106 and ensure that the back surface of the light receiving chip 105 is completely filled with the subsequent black resin material 110, thereby ensuring thermal bonding.
The light emitting chip 103 may be a light emitting diode chip, such as a silicon-based diode or a gallium nitride-based diode, or may be a laser, which is generally a high power device and has high heat generation efficiency; the light receiving chip 105 may be a photodiode or an image sensor, which has a relatively large power, but the emission efficiency between the light receiving chip and the light emitting chip varies according to the operating state, which results in a relatively large thermal difference between the two chips.
The light emitting chip 103 and the light receiving chip 105 may have different heights, but the top surfaces of the light emitting chip 103 and the light receiving chip 105 may be flush with each other by the first solder balls 104 and the second solder balls 106 having different heights. In this way, the transparent cover plate 107 is adhered to the light emitting chip 103 and the light receiving chip 105 through the adhesive layer 108, and the transparent cover plate 107 has the same size as the substrate 100. The transparent cover plate 107 may be glass, a transparent resin material, or the like, and the adhesive layer 108 is formed on the lower surface of the transparent cover plate 107 in advance and then is bonded onto the light emitting chip 103 and the light receiving chip 105.
The transparent cover 107 has an opening 109 therein, and the opening 109 may be two elongated openings, as shown in fig. 1 (B), and the opening 109 is located between the light emitting chip 103 and the light receiving chip 105. Of course, the opening 109 may be more elongated openings, and the length of the opening 109 is greater than the maximum width of the light emitting chip 103 and the light receiving chip 105 to achieve maximum optical isolation.
A cured black resin material 110 is disposed between the transparent cover plate 107 and the substrate 100. The black resin material 110 wraps the first solder balls 104 and the second solder balls 106, and wraps the sides and the back of the light emitting chip 103 and the light receiving chip 105. The black resin material includes a matrix resin, a black dye, and an inorganic filler including heat-dissipating inorganic particles, such as, optionally, silicon nitride, alumina, or silicon carbide particles. The matrix resin may be a light-curable resin or a heat-curable resin.
The black resin material 110 may be formed by injection molding the first injection port 101 and the second injection port 102 at the same time, and fills the first injection port 101 and the second injection port 102 and the opening 109 of the glass cover plate 107. The portion of the opening 109 filled with the black resin material 110 is higher than the light emitting chip 103 and the light receiving chip 105, so that optical isolation between the light emitting chip 103 and the light receiving chip 105 is achieved.
The structure of the present embodiment performs injection of the black resin material 110 through the first injection port 101 and the second injection port 102, and the opening 109 of the transparent cover plate 107 serves as an air outlet hole, and is designed specifically as a subsequent optical isolation structure.
The preparation method of the photoelectric packaging structure of the embodiment comprises the following steps:
s1, providing a substrate, wherein the substrate comprises a first injection molding opening and a second injection molding opening which penetrate through the substrate;
s2, bonding a light emitting chip and a light receiving chip on the substrate, wherein the first injection molding opening is completely positioned right below the light emitting chip, and the second injection molding opening is completely positioned right below the light receiving chip;
s3, adhering a transparent cover plate on the light emitting chip and the light receiving chip to form an overhead space between the transparent cover plate and the substrate, wherein the transparent cover plate comprises an opening arranged between the light emitting chip and the light receiving chip, and the opening is communicated with the overhead space;
s4, filling black resin materials into the overhead space through the first injection molding port and the second injection molding port, wherein the black resin materials fill the overhead space and the opening.
S1, referring to fig. 2, the substrate 100 is provided, the substrate 100 comprising a preformed opening comprising a first injection gate 101 and a second injection gate 102 extending through the substrate 100. The first injection port 101 and the second injection port 102 may be formed by an etching process, a laser drilling process, or the like, and the opening size is approximately about 2 mm.
S2, bonding a light emitting chip 103 on the substrate 100 through a plurality of first solder balls 104, wherein the plurality of first solder balls 104 surround the first molding opening 101, and the light emitting chip 103 completely covers the first molding opening 101; accordingly, the light receiving chip 105 is bonded to the substrate 100 by a plurality of second solder balls 106, the plurality of second solder balls 106 surround the second molding opening 102, and the light receiving chip 105 completely covers the second molding opening 102. The first solder balls 104 and the second solder balls 106 are formed by a ball-mounting process, and are cured and bonded by a reflow process.
S3, see fig. 3, a transparent cover plate 107, which may be a glass plate, for example, is provided with an adhesive layer 108. The transparent cover plate 107 is bonded to the front surfaces of the light emitting chip 103 and the light receiving chip 105 by the adhesive layer 108, thereby preventing the front surfaces from being masked by a subsequent black resin material. An overhead space is formed between the transparent cover plate 107 and the substrate 100, and an opening 109 is included in the transparent cover plate 107 and disposed between the light emitting chip 103 and the light receiving chip 105, and the opening 109 communicates with the overhead space.
S4, referring to fig. 4, providing an injection mold 111, where the injection mold 111 includes a recess, and a bottom of the recess has a first through hole 112 and a second through hole 113 communicating with an injection device; embedding the structure obtained in the step S3 in the notch, so that the first through hole 112 is communicated with the first injection molding opening 101, the second through hole 113 is communicated with the second injection molding opening 102, and the side surface of the overhead space is sealed by the side wall of the notch; the first injection port 101 and the second injection port 102 are simultaneously injected with glue through the first through hole 112 and the second through hole 113 to form a black resin material 110 (see fig. 5 in particular) filling the overhead space and the opening 109.
Specifically, the black resin material 110 fills the opening 109 of the transparent cover plate 107 to achieve light shielding of the light emitting chip 103 and the light receiving chip 105. A portion of the black resin material 110 overflowing from the opening 109 of the transparent cover plate 107 may be scraped off by a doctor blade.
In the method for manufacturing the optoelectronic package structure provided in this embodiment, a transparent cover plate having an opening is covered on the light emitting and receiving chip in advance, and a black resin material is filled through an injection molding opening in the substrate, and in particular, the black resin material fills the opening of the transparent cover plate to achieve light shielding of the light emitting and receiving chip.
Second embodiment
The embodiment provides an optoelectronic package structure, specifically including: a base including a first injection port and a second injection port extending through the base; the light emitting chip and the light receiving chip are jointed on the substrate, wherein the first injection molding opening is completely positioned under the light emitting chip, and the second injection molding opening is completely positioned under the light receiving chip; the black resin material is arranged on the substrate, at least covers partial side surfaces of the light emitting chip and the light receiving chip, a raised part is formed between the light emitting chip and the light receiving chip, and the height of the raised part is greater than that of the light emitting chip and the light receiving chip; and a transparent resin layer covering the light emitting chip and the light receiving chip and the black resin material.
Referring specifically to fig. 6, fig. 6 (a) is a cross-sectional view of the optoelectronic package structure, and (B) is a top view of the optoelectronic package structure. The substrate 200 may be made of the same material as the substrate 100 of the first embodiment, and has a first injection port 201 and a second injection port 202 which are similar to each other.
A light-emitting chip 203 and a light-receiving chip 205 are bonded on the substrate 200, wherein the light-emitting chip 203 is bonded on the substrate 200 through a plurality of first solder balls 204, and the light-receiving chip 205 is bonded on the substrate 200 through a plurality of second solder balls 206. In particular, the light emitting chip 203 spans over the first molding opening 201 and completely covers the first molding opening 201, and the plurality of first solder balls 204 may surround the first molding opening 201, so as to ensure the electrical insulation of the plurality of first solder balls 204, and ensure that the back surface of the light emitting chip 203 is completely filled with the subsequent black resin material 210, thereby ensuring the thermal bonding property. Similarly, the light receiving chip 205 spans over the second molding opening 202 and completely covers the second molding opening 202, and the plurality of second solder balls 206 may surround the second molding opening 202, so as to ensure electrical insulation of the plurality of second solder balls 206, and ensure that the back surface of the light receiving chip 205 is completely filled with the subsequent black resin material 210, thereby ensuring thermal adhesion.
Specifically, in this embodiment, the central axis of the light-emitting chip 203 and the light-receiving chip 205 is C, the central axis of the light-emitting chip 203 is C1, and the central axis of the light-receiving chip 205 is C2. Correspondingly, the central axis of the first injection port 201 is C3, the central axis of the second injection port 202 is C4, wherein the distance between CC1 is greater than the distance between CC3, and the distance between CC2 is greater than the distance between CC 4. That is, in a top view, the first injection molding opening 201 is offset from the center of the light emitting chip 203 and close to the light receiving chip 205; the second injection port 202 is offset from the center of the light receiving chip 205 and close to the light emitting chip 203.
The light emitting chip 203 may be a light emitting diode chip, such as a silicon-based diode or a gallium nitride-based diode, or may be a laser, which is generally a high power device and has high heat generation efficiency; the light receiving chip 205 may be a photodiode or an image sensor, which has a relatively large power, but the emission efficiency with the light emitting chip 203 varies according to the operating condition, resulting in a relatively large thermal difference between the two chips.
A cured black resin material 207 is disposed on the substrate 200. The black resin material 207 wraps the first solder balls 104 and the second solder balls 106, and also wraps the back surfaces of the light emitting chip 203 and the light receiving chip 205, and a part of the side surfaces of the light emitting chip 203 and the light receiving chip 205. The black resin material 207 includes a matrix resin, a black dye, and an inorganic filler including heat-dissipating inorganic particles, such as, optionally, silicon nitride, alumina, or silicon carbide particles. The matrix resin may be a light-curable resin or a heat-curable resin.
Since the distance of CC1 is greater than the distance of CC3 and the distance of CC2 is greater than the distance of CC4, when the black resin material 110 is simultaneously injection-molded through the first injection-molding port 101 and the second injection-molding port 102, a ridge portion 208 may be formed between the light-emitting chip 203 and the light-receiving chip 205 due to the stacking effect of injection molding, the height of the ridge portion 208 being greater than the height of the light-emitting chip 203 and the light-receiving chip 205, thereby achieving light shielding.
The ridge portion 208 may be extended in the length direction of the light emitting chip 203 and the light receiving chip 205, wherein the black resin material 207 has a smaller thermal expansion coefficient and a higher thermal conductivity than the subsequent transparent resin layer 209, whereby heat dissipation may be achieved and the strength of the substrate 200 may be enhanced.
A transparent resin layer 209 is covered over the black resin material 207, and the transparent resin layer 209 covers the front surfaces of the light emitting chip 203 and the light receiving chip 205 to ensure sealing of the upper layers. The transparent resin layer 209 may be formed using a conventional transparent epoxy material, which is sealed by thermosetting setting.
The preparation method of the photoelectric packaging structure of the embodiment comprises the following steps:
s1, providing a substrate, wherein the substrate comprises a first injection molding opening and a second injection molding opening which penetrate through the substrate;
s2, a light emitting chip and a light receiving chip are jointed on the substrate, wherein the first injection molding opening is completely positioned under the light emitting chip, and the second injection molding opening is completely positioned under the light receiving chip;
s3, simultaneously applying a black resin material to the substrate through the first injection molding port and the second injection molding port, the black resin material covering at least a part of the side surfaces of the light emitting chip and the light receiving chip and forming a raised portion between the light emitting chip and the light receiving chip, the raised portion having a height greater than that of the light emitting chip and the light receiving chip;
s4, covering a transparent resin layer on the light emitting chip and the light receiving chip and the black resin material.
S1, referring to fig. 7, providing the substrate 200 as described above, the substrate 200 comprising a preformed opening comprising a first injection port 201 and a second injection port 202 extending through the substrate 200. The first injection port 201 and the second injection port 202 may be formed by an etching process, a laser drilling process, or the like, and the opening size is approximately about 2 mm.
S2, bonding a light emitting chip 203 on the substrate 200 through a plurality of first solder balls 204, the plurality of first solder balls 204 surrounding the first injection molding opening 201, and the light emitting chip 203 completely covering the first injection molding opening 201; accordingly, the light-receiving chip 205 is bonded to the substrate 200 through a plurality of second solder balls 206, the plurality of second solder balls 206 surround the second molding opening 202, and the light-receiving chip 205 completely covers the second molding opening 202. The first solder balls 204 and the second solder balls 206 are formed by a ball-mounting process, and are cured and bonded by a reflow process.
Referring again to fig. 6, in this embodiment, the central axis of the light-emitting chip 203 and the light-receiving chip 205 is C, while the central axis of the light-emitting chip 203 is C1 and the central axis of the light-receiving chip 205 is C2. Correspondingly, the central axis of the first injection port 201 is C3, the central axis of the second injection port 202 is C4, wherein the distance between CC1 is greater than the distance between CC3, and the distance between CC2 is greater than the distance between CC 4. That is, in a top view, the first injection molding opening 201 is offset from the center of the light emitting chip 203 and close to the light receiving chip 205; the second injection port 202 is offset from the center of the light receiving chip 205 and close to the light emitting chip 203.
S3, referring to fig. 7, providing an injection mold 211, wherein the injection mold 211 comprises a recess, and the bottom of the recess is provided with a first through hole 212 and a second through hole 213 for communicating with an injection device; inserting the structure obtained in step S2 into the notch, so that the first through hole 212 is communicated with the first injection port 201, the second through hole 213 is communicated with the second injection port 202, and the side surface of the overhead space is sealed by the side wall of the notch; glue is injected into the first injection port 201 and the second injection port 202 through the first through hole 212 and the second through hole 213 at the same time to form a black resin material 207 (see fig. 9 in particular).
Since the first injection port 201 is offset from the center of the light emitting chip 203 and the second injection port 202 is offset from the center of the light receiving chip 205, the black resin material between the light emitting chip 203 and the light receiving chip 205 is accumulated to form a ridge portion 208, as shown in fig. 9. Specifically, the black resin material 207 is attached to the back surfaces of the light emitting chip 203 and the light receiving chip 205 in a sealing manner, and covers at least a part of the side surfaces of the light emitting chip 203 and the light receiving chip 205.
S4, referring to fig. 10, a transparent resin layer 209 is coated on the light emitting chip 203 and the light receiving chip 205 and the black resin material 207. The transparent resin layer 209 is formed by injection molding or lamination, and is subjected to a setting process through a thermosetting process. At least a part of the cross section along the cross section parallel to the substrate 200 includes a black resin material 207 and a transparent resin layer 209. Wherein the transparent resin layer 209 has a thermal expansion coefficient larger than that of the black resin material 207.
This embodiment provides a method for manufacturing an optoelectronic package structure, in which a black resin material is filled using two injection molding ports in a substrate that are offset from the center with respect to a chip to obtain a black resin material having an intermediate ridge portion, and in particular, the height of the black resin material is greater than the height of a light emitting and receiving chip to achieve light shielding of the light emitting and receiving chip
Further, the injection molding opening of the substrate in the embodiment of the invention is formed in advance, and the bonding step of the light emitting chip and the light receiving chip is performed before, so that the black resin material can be fully contacted with the back surfaces of the light emitting chip and the light receiving chip, the quick heat conduction of the black resin material and the light emitting chip and the light receiving chip is realized, and the internal heat balance is ensured.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. The preparation method of the photoelectric packaging structure is characterized by comprising the following steps:
s1, providing a substrate, wherein the substrate comprises a first injection molding opening and a second injection molding opening which penetrate through the substrate;
s2, bonding a light emitting chip and a light receiving chip on the substrate, wherein the first injection molding opening is completely positioned right below the light emitting chip, and the second injection molding opening is completely positioned right below the light receiving chip;
s3, adhering a transparent cover plate on the light emitting chip and the light receiving chip to form an overhead space between the transparent cover plate and the substrate, wherein the transparent cover plate comprises an opening arranged between the light emitting chip and the light receiving chip, and the opening is communicated with the overhead space;
s4, filling black resin materials into the overhead space through the first injection molding port and the second injection molding port, wherein the black resin materials fill the overhead space and the opening.
2. The method for manufacturing an optoelectronic package structure according to claim 1,
the black resin material includes a matrix resin, a black dye, and an inorganic filler including heat-dissipating inorganic particles.
3. The method for manufacturing an optoelectronic package structure according to claim 1,
step S4 specifically includes: providing an injection mold, wherein the injection mold comprises a notch, and the bottom of the notch is provided with a first through hole and a second through hole which are communicated with an injection molding device; embedding the structure obtained in the step S3 in the notch, so that the first through hole is communicated with the first injection molding opening, the second through hole is communicated with the second injection molding opening, and the side surface of the overhead space is sealed by the side wall of the notch; injecting glue to the first injection molding opening and the second injection molding opening through the first through hole and the second through hole simultaneously to form a black resin material for filling the overhead space and the opening.
4. The method for manufacturing an optoelectronic package structure according to claim 1,
an adhesive layer is adhered below the transparent cover plate, and the transparent cover plate is adhered to the light emitting chip and the light receiving chip through the adhesive layer.
5. An optoelectronic package structure formed by the method of making an optoelectronic package structure according to any one of claims 1-4, comprising:
a base including a first injection port and a second injection port extending through the base;
the light emitting chip and the light receiving chip are jointed on the substrate, wherein the first injection molding opening is completely positioned under the light emitting chip, and the second injection molding opening is completely positioned under the light receiving chip;
a transparent cover plate bonded on the light emitting chip and the light receiving chip to form an overhead space between the transparent cover plate and the substrate, wherein the transparent cover plate comprises an opening arranged between the light emitting chip and the light receiving chip, and the opening is communicated with the overhead space;
and a black resin material filling the overhead space and the opening.
6. The preparation method of the photoelectric packaging structure is characterized by comprising the following steps:
s1, providing a substrate, wherein the substrate comprises a first injection molding port and a second injection molding port which penetrate through the substrate;
s2, bonding a light emitting chip and a light receiving chip on the substrate, wherein the first injection molding opening is completely positioned right below the light emitting chip, and the second injection molding opening is completely positioned right below the light receiving chip;
s3, simultaneously applying a black resin material to the substrate through the first injection molding port and the second injection molding port, the black resin material covering at least a part of the side surfaces of the light emitting chip and the light receiving chip and forming a raised portion between the light emitting chip and the light receiving chip, the raised portion having a height greater than that of the light emitting chip and the light receiving chip;
s4, covering a transparent resin layer on the light emitting chip and the light receiving chip and the black resin material.
7. The method for manufacturing an optoelectronic package structure according to claim 6,
the black resin material includes a matrix resin, a black dye, and an inorganic filler including heat-dissipating inorganic particles.
8. The method for manufacturing an optoelectronic package structure according to claim 6,
step S3 specifically includes: providing an injection mold, wherein the injection mold comprises a notch, and the bottom of the notch is provided with a first through hole and a second through hole which are communicated with an injection molding device; embedding the structure obtained in the step S2 into the notch, so that the first through hole is communicated with the first injection molding opening, and the second through hole is communicated with the second injection molding opening; injecting glue to the first injection molding opening and the second injection molding opening through the first through hole and the second through hole simultaneously so as to apply black resin materials.
9. The method for manufacturing an optoelectronic package structure according to claim 6,
when viewed from top, the first injection molding opening is deviated from the center of the light emitting chip and is close to the light receiving chip; the second injection molding opening is deviated from the center of the light receiving chip and close to the light emitting chip.
10. An optoelectronic package structure formed by the method of making an optoelectronic package structure according to any one of claims 6 to 9, comprising:
a base including a first injection port and a second injection port extending through the base;
the light emitting chip and the light receiving chip are jointed on the substrate, wherein the first injection molding opening is completely positioned under the light emitting chip, and the second injection molding opening is completely positioned under the light receiving chip;
the black resin material is arranged on the substrate, at least covers partial side surfaces of the light emitting chip and the light receiving chip, a raised part is formed between the light emitting chip and the light receiving chip, and the height of the raised part is greater than that of the light emitting chip and the light receiving chip;
and a transparent resin layer covering the light emitting chip and the light receiving chip and the black resin material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210354739.7A CN114725241A (en) | 2022-04-06 | 2022-04-06 | Photoelectric packaging structure and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210354739.7A CN114725241A (en) | 2022-04-06 | 2022-04-06 | Photoelectric packaging structure and preparation method thereof |
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| Publication Number | Publication Date |
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| CN114725241A true CN114725241A (en) | 2022-07-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210354739.7A Withdrawn CN114725241A (en) | 2022-04-06 | 2022-04-06 | Photoelectric packaging structure and preparation method thereof |
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| Country | Link |
|---|---|
| CN (1) | CN114725241A (en) |
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2022
- 2022-04-06 CN CN202210354739.7A patent/CN114725241A/en not_active Withdrawn
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Application publication date: 20220708 |