CN114724934A - Bonding method and bonding structure of semiconductor material - Google Patents
Bonding method and bonding structure of semiconductor material Download PDFInfo
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- CN114724934A CN114724934A CN202110011626.2A CN202110011626A CN114724934A CN 114724934 A CN114724934 A CN 114724934A CN 202110011626 A CN202110011626 A CN 202110011626A CN 114724934 A CN114724934 A CN 114724934A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 290
- 239000000463 material Substances 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 99
- 229910052710 silicon Inorganic materials 0.000 claims description 99
- 239000010703 silicon Substances 0.000 claims description 99
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 13
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 26
- 238000009825 accumulation Methods 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 14
- 238000010891 electric arc Methods 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 17
- 238000011109 contamination Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 238000012805 post-processing Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention provides a bonding method and a bonding structure of semiconductor materials, wherein a mixed surface of a semiconductor medium and an insulating medium is formed on at least one piece of semiconductor material, so that a bonding interface comprises a contact region of the semiconductor medium and the semiconductor medium, a contact region of the semiconductor medium and the insulating medium and/or a contact region of the insulating medium and the insulating medium. The contact area of the semiconductor medium and the semiconductor medium is used for charge transfer, so that the problems of electric arc effect, product failure, machine pollution and the like caused by charge accumulation are avoided; the contact area of the semiconductor medium and the insulating medium and/or the contact area of the insulating medium and the insulating medium are/is used for realizing stronger bonding strength at a lower temperature, reducing bonding defects, ensuring the performance of a device and improving the reliability of a product.
Description
Technical Field
The invention relates to a bonding method and a bonding structure of semiconductor materials.
Background
In order to meet the demand for further miniaturization and multi-functionalization of electronic products, the integrated circuit manufacturing technology is rapidly developed, and the bonding process between semiconductor materials is increasingly used in the manufacturing process.
Fig. 1-3 illustrate three main bonding modes between conventional semiconductor materials (silicon wafers as an example).
As shown in fig. 1, after the planarization process is performed on each of the first wafer 110 and the second wafer 120, the first wafer and the second wafer are directly bonded to each other to form a bonding interface where silicon contacts silicon;
as shown in fig. 2, an insulating dielectric film 130 such as silicon oxide, silicon nitride or silicon carbonitride is deposited on the surface of the second wafer 120, and then bonded to the first wafer 110 (preferably, the surface to be bonded may be pretreated before the bonding step), so as to form a bonding interface where silicon contacts the insulating dielectric;
as shown in fig. 3, insulating dielectric films 140 and 130 are formed on the surfaces of the first wafer 110 and the second wafer 120, respectively, and then bonded to each other (preferably, the surfaces to be bonded may be pretreated before the bonding step), so as to form a bonding interface where the insulating dielectric and the insulating dielectric are in contact.
Among them, the bonding method shown in FIG. 1 has the disadvantages of weak bonding strength and high requirement on the heat treatment temperature after bonding (>950 ℃), affects device performance, and is prone to bonding defects such as bubbles and voids. The bonding mode shown in fig. 2 and 3 can be carried out at a lower temperature (<A stronger bonding strength (400 ℃) can be achieved>2J/m2) And because of the absorption effect of the insulating medium such as silicide on gas, bonding defects such as bubbles and cavities are reduced, but because of the isolation effect of the insulating medium of a bonding interface, charges generated in the subsequent process cannot be transferred and eliminated, the charges are accumulated on the surface of the substrate, an arc effect may be caused, or the problems of product failure, machine pollution and the like caused by defects are caused.
Disclosure of Invention
The invention aims to provide a bonding method and a bonding structure of a semiconductor material, which can avoid the problems of electric arc effect, product failure, machine pollution and the like caused by charge accumulation; but also can realize stronger bonding strength at lower temperature, reduce bonding defects, ensure the performance of devices and improve the reliability of products.
Based on the above consideration, one aspect of the present invention provides a method for bonding semiconductor materials, comprising: providing two pieces of semiconductor materials, and forming a mixed surface of a semiconductor medium and an insulating medium on the surface of at least one piece of semiconductor material; the two pieces of semiconductor material are bonded to each other such that the bonding interface comprises both the contact region of the semiconductor medium and the contact region of the semiconductor medium and the insulating medium and/or the contact region of the insulating medium and the insulating medium.
Preferably, the step of forming a mixed surface of a semiconductor medium and an insulating medium comprises:
and etching the semiconductor medium of the semiconductor material to form a groove, and filling the groove with an insulating medium to form the mixed surface.
Preferably, the step of forming a mixed surface of a semiconductor medium and an insulating medium comprises:
and depositing an insulating medium on the semiconductor material, etching the insulating medium to form a groove, and filling the groove with the semiconductor medium to form the mixed surface.
Preferably, the semiconductor medium comprises any one or a combination of silicon, germanium, silicon carbide, gallium arsenide or indium gallium arsenide.
Preferably, the semiconductor medium comprises any one or a combination of a single crystal semiconductor or a polycrystalline semiconductor.
Preferably, the semiconductor medium made of silicon material comprises any one or a combination of pure silicon or doped silicon.
Preferably, the insulating medium comprises any one or a combination of silicon oxide, silicon nitride, silicon carbonitride, silicon oxynitride and silicon oxycarbide.
Preferably, the thickness of the insulating medium is greater than 3 nm.
Preferably, the temperature of the bonding step and the post-treatment is less than 450 ℃.
Another aspect of the present invention provides a bonded structure of semiconductor materials, comprising two sheets of semiconductor materials bonded to each other, wherein at least one sheet of semiconductor material has a mixed surface of a semiconductor medium and an insulating medium; the bonding interface comprises both the contact region of the semiconductor medium and the contact region of the semiconductor medium and the insulating medium and/or the contact region of the insulating medium and the insulating medium.
Preferably, the semiconductor medium comprises any one or a combination of silicon, germanium, silicon carbide, gallium arsenide or indium gallium arsenide.
Preferably, the semiconductor medium comprises any one or a combination of a single crystal semiconductor or a polycrystalline semiconductor.
Preferably, the semiconductor medium made of silicon material comprises any one or a combination of pure silicon or doped silicon.
Preferably, the insulating medium comprises any one or a combination of silicon oxide, silicon nitride, silicon carbonitride, silicon oxynitride and silicon oxycarbide.
Preferably, the thickness of the insulating medium is greater than 3 nm.
According to the bonding method and the bonding structure of the semiconductor material, the mixed surface of the semiconductor medium and the insulating medium is formed on at least one piece of semiconductor material, so that the bonding interface comprises a contact region of the semiconductor medium and the semiconductor medium, a contact region of the semiconductor medium and the insulating medium and/or a contact region of the insulating medium and the insulating medium. The contact area of the semiconductor medium and the semiconductor medium is used for charge transfer, so that the problems of electric arc effect, product failure, machine pollution and the like caused by charge accumulation are avoided; the contact area of the semiconductor medium and the insulating medium and/or the contact area of the insulating medium and the insulating medium are/is used for realizing stronger bonding strength at a lower temperature, reducing bonding defects, ensuring the performance of a device and improving the reliability of a product.
Drawings
Other features, objects and advantages of the present invention will become more apparent from the following detailed description of non-limiting embodiments thereof, which proceeds with reference to the accompanying drawings.
FIGS. 1-3 are schematic diagrams of a prior art method of bonding semiconductor materials;
FIG. 4 is a flow chart of a method of bonding semiconductor materials of the present invention;
fig. 5 is a schematic view of a bonding method of semiconductor materials according to a first embodiment of the present invention;
fig. 6 is a schematic view of a bonding method of a semiconductor material according to a second embodiment of the present invention;
fig. 7 is a schematic view of a bonding method of semiconductor materials according to a third embodiment of the present invention;
FIG. 8 is a schematic top view of a portion of the area A of FIG. 7;
fig. 9 is a schematic view of a bonding method of a semiconductor material according to a fourth embodiment of the present invention;
fig. 10 is a schematic view of a bonding method of a semiconductor material according to a fifth embodiment of the present invention;
fig. 11 is a schematic view of a bonding method of semiconductor materials according to a sixth embodiment of the present invention;
FIG. 12 is a partial top view of the area B of FIG. 11;
fig. 13 is a schematic view of a bonding method of a semiconductor material according to a seventh embodiment of the present invention;
fig. 14 is a schematic view of a bonding method of a semiconductor material according to an eighth embodiment of the present invention.
In the drawings, like or similar reference numbers indicate like or similar devices (modules) or steps throughout the different views.
Detailed Description
In order to solve the problems in the prior art, the present invention provides a bonding method and a bonding structure for semiconductor materials, by forming a mixed surface of a semiconductor medium and an insulating medium on at least one piece of semiconductor material, a bonding interface includes both a contact region of the semiconductor medium and a contact region of the semiconductor medium and the insulating medium and/or a contact region of the insulating medium and the insulating medium. The contact area of the semiconductor medium and the semiconductor medium is used for charge transfer, so that the problems of electric arc effect, product failure, machine pollution and the like caused by charge accumulation are avoided; the contact area of the semiconductor medium and the insulating medium and/or the contact area of the insulating medium and the insulating medium are/is used for realizing stronger bonding strength at a lower temperature, reducing bonding defects, ensuring the performance of a device and improving the reliability of a product.
In the following detailed description of the preferred embodiments, reference is made to the accompanying drawings which form a part hereof. The accompanying drawings illustrate, by way of example, specific embodiments in which the invention may be practiced. The illustrated embodiments are not intended to be exhaustive of all embodiments according to the invention. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.
The present invention will be described in detail with reference to specific examples.
Fig. 4 shows a method for bonding a semiconductor material of the present invention, comprising: firstly, two pieces of semiconductor material are provided; then, forming a mixed surface of a semiconductor medium and an insulating medium on the surface of at least one piece of semiconductor material, specifically, etching the semiconductor medium of the semiconductor material to form a groove, filling the groove with the insulating medium, forming the mixed surface through surface planarization treatment, or depositing the insulating medium on the semiconductor material, etching the insulating medium to form a groove, stopping the groove on the semiconductor material, filling the groove with the semiconductor medium, and forming the mixed surface through surface planarization treatment; finally, the two pieces of semiconductor material are bonded to one another such that the bonding interface comprises both the contact region of the semiconductor medium and the contact region of the semiconductor medium and the insulating medium and/or the contact region of the insulating medium and the insulating medium.
Therefore, the contact area of the semiconductor medium and the semiconductor medium is used for charge transfer, so that the problems of electric arc effect, product failure, machine pollution and the like caused by charge accumulation are avoided; the contact area of the semiconductor medium and the insulating medium and/or the contact area of the insulating medium and the insulating medium are used for realizing stronger bonding strength at lower temperature (preferably, the temperature of the bonding step and the post-treatment is less than 450 ℃), reducing bonding defects, ensuring the performance of a device and improving the reliability of a product.
Fig. 5 is a schematic diagram illustrating a bonding method of a semiconductor material according to a first embodiment of the present invention.
Two pieces of semiconductor material 210, 220 (e.g., two silicon wafers) made of semiconductor medium are provided, and a mixed surface of the semiconductor medium 220 and the insulating medium 230 is formed on the surface of one piece of semiconductor material 220. Specifically, a hard mask layer and a photoresist layer may be sequentially deposited on the semiconductor material 220, a groove is formed in the semiconductor medium 220 of the semiconductor material 220 by means of photolithography and etching, the groove is filled with an insulating medium 230, and then surface planarization before bonding is performed by using wet etching, dry etching, chemical mechanical polishing, or a combination thereof, and then the surface planarization is stopped at the mixed surface.
The two semiconductor materials 210 and 220 are bonded with each other, so that a bonding interface comprises a contact area of the semiconductor medium 210 and the semiconductor medium 220, which can be used for charge transfer and avoids the problems of electric arc effect, product failure, machine pollution and the like caused by charge accumulation, and a contact area of the semiconductor medium 210 and the insulating medium 230, which can be used for realizing stronger bonding strength at a lower temperature (preferably, the temperature of a bonding step and post-treatment is less than 450 ℃), reducing bonding defects, ensuring device performance and improving product reliability.
Those skilled in the art will appreciate that the semiconductor media 210, 220 may comprise any one or combination of silicon, germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, and may also comprise any one or combination of single crystal semiconductors or polycrystalline semiconductors. Taking a semiconductor medium made of silicon as an example, the semiconductor medium can include any one or a combination of pure silicon or doped silicon.
Preferably, the insulating medium 230 may include any one or a combination of silicon oxide, silicon nitride, silicon carbonitride, silicon oxynitride and silicon oxycarbide, and the thickness of the insulating medium 230 is greater than 3nm to ensure sufficient bonding strength and fewer bonding defects.
Fig. 6 is a schematic view showing a bonding method of a semiconductor material according to a second embodiment of the present invention.
Two pieces of semiconductor material 210, 220 (e.g., two silicon wafers) made of semiconductor medium are provided, and a mixed surface of semiconductor medium 250 and insulating medium 230 is formed on the surface of one piece of semiconductor material 220. Specifically, an insulating dielectric layer 230 and a photoresist layer may be sequentially deposited on the semiconductor material 220, a groove may be formed in the insulating dielectric layer 230 by photolithography and etching (the etching passes through the insulating dielectric layer 230 and stops in the semiconductor material 220 to ensure that the semiconductor medium 250 filled subsequently directly contacts the semiconductor material 220 to form a conductive path), the groove is filled with the semiconductor medium 250, and then the surface planarization before bonding is performed by wet etching, dry etching, chemical mechanical polishing, or a combination thereof, and stops on the mixed surface.
The two semiconductor materials 210 and 220 are bonded with each other, so that a bonding interface comprises a contact area of the semiconductor medium 210 and the semiconductor medium 250, which can be used for charge transfer and avoids the problems of electric arc effect, product failure, machine pollution and the like caused by charge accumulation, and a contact area of the semiconductor medium 210 and the insulating medium 230, which can be used for realizing stronger bonding strength at a lower temperature (preferably, the temperature of a bonding step and post-treatment is less than 450 ℃), reducing bonding defects, ensuring device performance and improving product reliability.
Those skilled in the art will appreciate that the semiconductor media 210, 220, 250 may include any one or combination of silicon, germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, and may also include any one or combination of single crystal semiconductors or polycrystalline semiconductors. Taking a semiconductor medium made of silicon as an example, the semiconductor medium can include any one or a combination of pure silicon or doped silicon.
Preferably, the insulating medium 230 may include any one or a combination of silicon oxide, silicon nitride, silicon carbonitride, silicon oxynitride and silicon oxycarbide, and the thickness of the insulating medium 230 is greater than 3nm to ensure sufficient bonding strength and fewer bonding defects.
Fig. 7 and 8 are schematic diagrams illustrating a bonding method of a semiconductor material according to a third embodiment of the present invention.
Two pieces of semiconductor material 210 and 220 (for example, two silicon wafers) made of semiconductor medium are provided, a mixed surface of the semiconductor medium 210 and the insulating medium 240 is formed on the surface of the semiconductor material 210, and a mixed surface of the semiconductor medium 220 and the insulating medium 230 is formed on the surface of the semiconductor material 220 by the method of the first embodiment.
Referring to the partial top view of fig. 8, the two semiconductor materials 210 and 220 are bonded to each other in a manner that the semiconductor medium 210 is opposite to the semiconductor medium 220 and the insulating medium 240 is opposite to the insulating medium 230, so as to form a symmetrical hybrid bonding interface, where the bonding interface includes both the contact area between the semiconductor medium 210 and the semiconductor medium 220, which can be used for charge transfer and avoid the problems of arc effect, product failure, machine contamination, etc. caused by charge accumulation, and the contact area between the insulating medium 240 and the insulating medium 230, which can be used for realizing stronger bonding strength at a lower temperature (preferably, the temperature of the bonding step and the post-treatment is less than 450 ℃), reducing bonding defects, ensuring device performance, and improving product reliability.
Those skilled in the art will appreciate that the semiconductor media 210, 220 may include any one or combination of silicon, germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, and may also include any one or combination of single crystal semiconductors or polycrystalline semiconductors. The semiconductor medium made of silicon is taken as an example, and can comprise any one or a combination of pure silicon or doped silicon.
Preferably, the insulating medium 230, 240 may include any one or a combination of silicon oxide, silicon nitride, silicon carbonitride, silicon oxynitride, and silicon oxycarbide, and the thickness of the insulating medium 230, 240 is greater than 3nm to ensure sufficient bonding strength and fewer bonding defects.
Fig. 9 is a schematic view showing a bonding method of a semiconductor material according to a fourth embodiment of the present invention.
Two pieces of semiconductor material 210 and 220 (for example, two silicon wafers) made of semiconductor medium are provided, a mixed surface of semiconductor medium 260 and insulating medium 240 is formed on the surface of semiconductor material 210, and a mixed surface of semiconductor medium 250 and insulating medium 230 is formed on the surface of semiconductor material 220 by the method of the second embodiment.
Similarly, the two semiconductor materials 210 and 220 are bonded with each other in a manner that the semiconductor medium 260 is opposite to the semiconductor medium 250, and the insulating medium 240 is opposite to the insulating medium 230, so as to form a symmetrical hybrid bonding interface, wherein the bonding interface comprises a contact region of the semiconductor medium 260 and the semiconductor medium 250, which can be used for charge transfer and avoid problems of electric arc effect, product failure, machine pollution and the like caused by charge accumulation, and a contact region of the insulating medium 240 and the insulating medium 230, which can be used for realizing stronger bonding strength at a lower temperature (preferably, the temperature of a bonding step and post-processing is less than 450 ℃), reducing bonding defects, ensuring device performance and improving product reliability.
Those skilled in the art will appreciate that the semiconductor media 210, 220, 250, 260 may include any one or combination of silicon, germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, and may also include any one or combination of single crystal semiconductors or polycrystalline semiconductors. Taking a semiconductor medium made of silicon as an example, the semiconductor medium can include any one or a combination of pure silicon or doped silicon.
Preferably, the insulating medium 230, 240 may include any one or a combination of silicon oxide, silicon nitride, silicon carbonitride, silicon oxynitride, and silicon oxycarbide, and the thickness of the insulating medium 230, 240 is greater than 3nm to ensure sufficient bonding strength and fewer bonding defects.
Fig. 10 is a schematic view showing a bonding method of a semiconductor material according to a fifth embodiment of the present invention.
Two pieces of semiconductor materials 210 and 220 (for example, two silicon wafers) composed of a semiconductor medium are provided, a mixed surface of the semiconductor medium 210 and the insulating medium 240 is formed on the surface of the semiconductor material 210 by the method of the first embodiment, and a mixed surface of the semiconductor medium 250 and the insulating medium 230 is formed on the surface of the semiconductor material 220 by the method of the second embodiment.
Similarly, the two semiconductor materials 210 and 220 are bonded with each other in a manner that the semiconductor medium 210 is opposite to the semiconductor medium 250 and the insulating medium 240 is opposite to the insulating medium 230, so as to form a symmetrical hybrid bonding interface, wherein the bonding interface comprises a contact region of the semiconductor medium 210 and the semiconductor medium 250, which can be used for charge transfer and avoid problems of electric arc effect, product failure, machine pollution and the like caused by charge accumulation, and a contact region of the insulating medium 240 and the insulating medium 230, which can be used for realizing stronger bonding strength at a lower temperature (preferably, the temperature of a bonding step and post-processing is less than 450 ℃), reducing bonding defects, ensuring device performance and improving product reliability.
Those skilled in the art will appreciate that the semiconductor media 210, 220, 250 may include any one or combination of silicon, germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, and may also include any one or combination of single crystal semiconductors or polycrystalline semiconductors. Taking a semiconductor medium made of silicon as an example, the semiconductor medium can include any one or a combination of pure silicon or doped silicon.
Preferably, the insulating medium 230, 240 may include any one or a combination of silicon oxide, silicon nitride, silicon carbonitride, silicon oxynitride, and silicon oxycarbide, and the thickness of the insulating medium 230, 240 is greater than 3nm to ensure sufficient bonding strength and fewer bonding defects.
Fig. 11 and 12 are schematic diagrams illustrating a bonding method of semiconductor materials according to a sixth embodiment of the present invention.
Two pieces of semiconductor material 210 and 220 (for example, two silicon wafers) made of semiconductor medium are provided, a mixed surface of the semiconductor medium 210 and the insulating medium 240 is formed on the surface of the semiconductor material 210, and a mixed surface of the semiconductor medium 220 and the insulating medium 230 is formed on the surface of the semiconductor material 220 by the method of the first embodiment.
Referring to the partial top view of fig. 12, the two semiconductor materials 210 and 220 are bonded to each other in a manner that the semiconductor medium 210 is opposite to the insulating medium 230 and the semiconductor medium 220 is opposite to the insulating medium 240, so as to form a complementary hybrid bonding interface, where the bonding interface includes both the contact area between the semiconductor medium 210 and the semiconductor medium 220, which can be used for charge transfer and avoid the problems of arcing, product failure, and machine contamination due to charge accumulation, and the contact area between the semiconductor medium 210 and the insulating medium 230 and between the semiconductor medium 220 and the insulating medium 240, which can be used for achieving stronger bonding strength at a lower temperature (preferably, the temperature of the bonding step and the post-processing is less than 450 ℃), reducing bonding defects, ensuring device performance, and improving product reliability.
Those skilled in the art will appreciate that the semiconductor media 210, 220 may include any one or combination of silicon, germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, and may also include any one or combination of single crystal semiconductors or polycrystalline semiconductors. The semiconductor medium made of silicon is taken as an example, and can comprise any one or a combination of pure silicon or doped silicon.
Preferably, the insulating medium 230, 240 may include any one or a combination of silicon oxide, silicon nitride, silicon carbonitride, silicon oxynitride, and silicon oxycarbide, and the thickness of the insulating medium 230, 240 is greater than 3nm to ensure sufficient bonding strength and fewer bonding defects.
Fig. 13 is a schematic view showing a bonding method of a semiconductor material according to a seventh embodiment of the present invention.
Two pieces of semiconductor material 210 and 220 (for example, two silicon wafers) made of semiconductor medium are provided, a mixed surface of the semiconductor medium 260 and the insulating medium 240 is formed on the surface of the semiconductor material 210, and a mixed surface of the semiconductor medium 250 and the insulating medium 230 is formed on the surface of the semiconductor material 220 by the method of the second embodiment.
Similarly, the two semiconductor materials 210 and 220 are bonded to each other in a manner that the semiconductor medium 260 is opposite to the insulating medium 230, and the semiconductor medium 250 is opposite to the insulating medium 240, so as to form a complementary hybrid bonding interface, where the bonding interface includes both the contact area between the semiconductor medium 260 and the semiconductor medium 250, which can be used for charge transfer and avoid the problems of arcing, product failure, machine contamination, etc. caused by charge accumulation, and the contact area between the semiconductor medium 260 and the insulating medium 230, and between the semiconductor medium 250 and the insulating medium 240, which can be used for realizing stronger bonding strength at a lower temperature (preferably, the temperature of the bonding step and the post-treatment is less than 450 ℃), reducing bonding defects, ensuring device performance, and improving product reliability.
Those skilled in the art will appreciate that the semiconductor media 210, 220, 250, 260 may include any one or combination of silicon, germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, and may also include any one or combination of single crystal semiconductors or polycrystalline semiconductors. The semiconductor medium made of silicon is taken as an example, and can comprise any one or a combination of pure silicon or doped silicon.
Preferably, the insulating medium 230, 240 may include any one or a combination of silicon oxide, silicon nitride, silicon carbonitride, silicon oxynitride, and silicon oxycarbide, and the thickness of the insulating medium 230, 240 is greater than 3nm to ensure sufficient bonding strength and fewer bonding defects.
Fig. 14 is a schematic view showing a bonding method of a semiconductor material according to an eighth embodiment of the present invention.
Two pieces of semiconductor materials 210 and 220 (for example, two silicon wafers) composed of a semiconductor medium are provided, a mixed surface of the semiconductor medium 210 and the insulating medium 240 is formed on the surface of the semiconductor material 210 by the method of the first embodiment, and a mixed surface of the semiconductor medium 250 and the insulating medium 230 is formed on the surface of the semiconductor material 220 by the method of the second embodiment.
Similarly, the two semiconductor materials 210 and 220 are bonded to each other in a manner that the semiconductor medium 210 is opposite to the insulating medium 230 and the semiconductor medium 250 is opposite to the insulating medium 240, so as to form a complementary hybrid bonding interface, where the bonding interface includes both the contact area between the semiconductor medium 210 and the semiconductor medium 250, which can be used for charge transfer and avoid the problems of arcing, product failure, machine contamination, etc. caused by charge accumulation, and the contact area between the semiconductor medium 210 and the insulating medium 230 and between the semiconductor medium 250 and the insulating medium 240, which can be used for realizing stronger bonding strength at a lower temperature (preferably, the temperature of the bonding step and the post-treatment is less than 450 ℃), reducing bonding defects, ensuring device performance, and improving product reliability.
Those skilled in the art will appreciate that the semiconductor media 210, 220, 250 may include any one or combination of silicon, germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, and may also include any one or combination of single crystal semiconductors or polycrystalline semiconductors. The semiconductor medium made of silicon is taken as an example, and can comprise any one or a combination of pure silicon or doped silicon.
Preferably, the insulating medium 230, 240 may include any one or a combination of silicon oxide, silicon nitride, silicon carbonitride, silicon oxynitride, and silicon oxycarbide, and the thickness of the insulating medium 230, 240 is greater than 3nm to ensure sufficient bonding strength and fewer bonding defects.
Furthermore, in other embodiments not shown, it can be understood by those skilled in the art that different combinations of bonding interfaces can be formed by adjusting the shapes, sizes and proportions of the semiconductor medium and the insulating medium in the mixed surface of at least one piece of semiconductor material, so long as the bonding interface includes both the contact area of the semiconductor medium and the contact area of the semiconductor medium and the insulating medium and/or the contact area of the insulating medium and the insulating medium, which can be used for achieving the purpose of the present invention.
Another aspect of the present invention provides a bonded structure of semiconductor materials, comprising two sheets of semiconductor materials bonded to each other, wherein at least one of the sheets of semiconductor materials has a mixed surface of a semiconductor medium and an insulating medium; the bonding interface comprises both the contact region of the semiconductor medium and the contact region of the semiconductor medium and the insulating medium and/or the contact region of the insulating medium and the insulating medium.
Preferably, the semiconductor medium may include any one or a combination of silicon, germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, and may also include any one or a combination of single crystal semiconductors or polycrystalline semiconductors. The semiconductor medium made of silicon is taken as an example, and can comprise any one or a combination of pure silicon or doped silicon.
Preferably, the insulating medium may include any one or a combination of silicon oxide, silicon nitride and silicon carbonitride, and the thickness of the insulating medium is greater than 3nm to ensure sufficient bonding strength and fewer bonding defects.
In summary, according to the bonding method and the bonding structure of the semiconductor material of the present invention, the mixed surface of the semiconductor medium and the insulating medium is formed on at least one piece of semiconductor material, so that the bonding interface includes both the contact region of the semiconductor medium and the contact region of the semiconductor medium and the insulating medium and/or the contact region of the insulating medium and the insulating medium. The contact area of the semiconductor medium and the semiconductor medium is used for charge transfer, so that the problems of electric arc effect, product failure, machine pollution and the like caused by charge accumulation are avoided; the contact area of the semiconductor medium and the insulating medium and/or the contact area of the insulating medium and the insulating medium are/is used for realizing stronger bonding strength at a lower temperature, reducing bonding defects, ensuring the performance of a device and improving the reliability of a product.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive. Furthermore, it will be obvious that the word "comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. Several elements recited in the apparatus claims may also be implemented by one element. The terms first, second, etc. are used to denote names, but not any particular order.
Claims (15)
1. A method of bonding semiconductor materials, comprising:
providing two pieces of semiconductor materials, and forming a mixed surface of a semiconductor medium and an insulating medium on the surface of at least one piece of semiconductor material;
the two pieces of semiconductor material are bonded to each other such that the bonding interface comprises both the contact region of the semiconductor medium and the contact region of the semiconductor medium and the insulating medium and/or the contact region of the insulating medium and the insulating medium.
2. The method of bonding semiconductor materials according to claim 1, wherein the step of forming a mixed surface of a semiconductor medium and an insulating medium comprises:
and etching the semiconductor medium of the semiconductor material to form a groove, and filling the groove with an insulating medium to form the mixed surface.
3. The method for bonding semiconductor materials according to claim 1, wherein the step of forming the mixed surface of the semiconductor medium and the insulating medium comprises:
and depositing an insulating medium on the semiconductor material, etching the insulating medium to form a groove, and filling the groove with the semiconductor medium to form the mixed surface.
4. The method for bonding semiconductor materials according to claim 1, wherein the semiconductor medium comprises any one or a combination of silicon, germanium, silicon carbide, gallium arsenide, or indium gallium arsenide.
5. The method for bonding semiconductor materials according to claim 4, wherein the semiconductor medium comprises any one or a combination of a single crystal semiconductor or a polycrystalline semiconductor.
6. The method for bonding semiconductor materials according to claim 4, wherein the semiconductor medium made of silicon comprises any one or a combination of pure silicon and doped silicon.
7. The method for bonding a semiconductor material according to claim 1, wherein the insulating medium comprises any one or a combination of silicon oxide, silicon nitride, silicon carbonitride, silicon oxynitride, and silicon oxycarbide.
8. The method for bonding semiconductor materials according to claim 1, wherein the insulating medium has a thickness of more than 3 nm.
9. The method for bonding semiconductor materials according to claim 1, wherein the temperature of the bonding step and the post-treatment is less than 450 ℃.
10. A bonded structure of semiconductor material, characterized in that,
comprising two sheets of semiconductor material bonded to each other, wherein at least one sheet of semiconductor material has a mixed surface of a semiconductor medium and an insulating medium;
the bonding interface comprises both the contact region of the semiconductor medium and the contact region of the semiconductor medium and the insulating medium and/or the contact region of the insulating medium and the insulating medium.
11. The bonded structure of semiconductor material of claim 10, wherein the semiconductor medium comprises any one or combination of silicon, germanium, silicon carbide, gallium arsenide, or indium gallium arsenide.
12. The bonded structure of semiconductor material of claim 11, wherein the semiconductor medium comprises any one or a combination of a single crystal semiconductor or a polycrystalline semiconductor.
13. The bonded structure of semiconductor materials of claim 11, wherein the semiconductor medium of silicon material comprises any one or a combination of pure silicon or doped silicon.
14. The bonded structure of semiconductor materials of claim 10, wherein the insulating dielectric comprises any one or a combination of silicon oxide, silicon nitride, silicon carbonitride, silicon oxynitride, silicon oxycarbide.
15. The bonded structure of semiconductor materials of claim 10, wherein the insulating dielectric has a thickness greater than 3 nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040150067A1 (en) * | 2002-11-12 | 2004-08-05 | Bruno Ghyselen | Semiconductor structure and methods for fabricating same |
| WO2020117336A1 (en) * | 2018-12-06 | 2020-06-11 | Invensas Corporation | Capacitive coupling in a direct-bonded interface for microelectronic devices |
| CN215069994U (en) * | 2021-01-06 | 2021-12-07 | 格科微电子（上海）有限公司 | Bonding structure of semiconductor material |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040150067A1 (en) * | 2002-11-12 | 2004-08-05 | Bruno Ghyselen | Semiconductor structure and methods for fabricating same |
| WO2020117336A1 (en) * | 2018-12-06 | 2020-06-11 | Invensas Corporation | Capacitive coupling in a direct-bonded interface for microelectronic devices |
| CN215069994U (en) * | 2021-01-06 | 2021-12-07 | 格科微电子（上海）有限公司 | Bonding structure of semiconductor material |
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