CN114724910A - Ribbon ion beam implantation system - Google Patents
Ribbon ion beam implantation system Download PDFInfo
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- CN114724910A CN114724910A CN202210650058.5A CN202210650058A CN114724910A CN 114724910 A CN114724910 A CN 114724910A CN 202210650058 A CN202210650058 A CN 202210650058A CN 114724910 A CN114724910 A CN 114724910A
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- Prior art keywords
- ion beam
- ion
- component
- diffusion
- ribbon
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- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 210
- 238000002513 implantation Methods 0.000 title claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 49
- 238000000926 separation method Methods 0.000 claims description 16
- 238000001914 filtration Methods 0.000 claims description 5
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 description 19
- 239000000758 substrate Substances 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/21—Means for adjusting the focus
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
The invention provides a ribbon ion beam injection system, which comprises an ion beam generating component, an ion beam separating component, an ion beam converging component, an ion beam diffusing component and an ion beam adjusting component, wherein the ribbon ion beam injection system adopts a separating slit to separate ribbon ion beams into mutually independent ion beams, adopts a spiral coil to respectively converge the separated ion beams, adopts a diffusing lens to respectively diffuse the converged ion beams, adopts a Faraday cup to detect the current density distribution of the ion beams, adopts a controller to adjust the operating states of the ion beam converging component and the ion beam adjusting component according to the current density distribution condition of the ion beams, can separate the ion beams with wide belt into a plurality of areas which are approximately distributed in a point shape, then modulates the ion beams in each small area, and finally polymerizes all parts of the modulated ion beams to form the wide belt ion beams with high-uniformity current distribution, the modulation difficulty of the broadband beam ion beam is favorably reduced.
Description
Technical Field
The present invention relates to ion implantation equipment, and more particularly, to a ribbon ion beam implantation system.
Background
Currently, a treatment method of performing ion implantation using an ion implantation apparatus for a glass substrate or a semiconductor substrate used for a flat display device using a liquid crystal or an organic LED is widely used. In particular, in order to effectively and accurately implant ions into a large substrate, it is required to use a ribbon-shaped ion beam in which the width of the ion beam irradiated over the substrate is wide and the distribution of current density is controlled to a desired distribution. By using a ribbon-shaped ion beam having a beam width larger than the substrate width, a region in the substrate width direction can be processed at one time, and at this time, by moving the substrate in a direction perpendicular to the substrate width, ion implantation can be performed at one time on the entire substrate, thereby improving efficiency. However, since the width of the ribbon ion beam is too wide, it is difficult to achieve a highly uniform current density distribution in the substrate width direction by modulation, and ion implantation is not uniform on the substrate. Accordingly, there is a need for a structurally optimized ion beam implantation system that overcomes the above-mentioned deficiencies.
Disclosure of Invention
It is an object of the present invention to provide a ribbon ion beam implantation system that facilitates modulation of an ion beam.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a ribbon ion beam implantation system, comprising:
an ion beam generating assembly for generating a ribbon-shaped ion beam;
the ion beam filtering component is matched with the ion beam generating component and used for separating the ion beams generated by the ion beam generating component to form a plurality of mutually separated ion beams;
the ion beam converging component is matched with the ion beam separating component, and the ion beam converging component converges the separated ion beams respectively;
the ion beam diffusion component is matched with the ion beam converging component, and the ion beam adjusting component diffuses the converged ion beams so that adjacent ion beams are mutually overlapped;
and the ion beam adjusting component is matched with the ion beam diffusion component, and the operating state of the ion beam diffusion component is adjusted by the ion beam adjusting component.
The ion beam generation component is composed of a single ion source or a plurality of ion sources;
when the ion beam generation assembly is composed of a plurality of ion sources, the ion sources are sequentially arranged along the width direction of the ion beam.
The ion beam extraction assembly includes:
the ion source comprises a group of separating slits, each separating slit corresponds to the position of the ion source and is sequentially arranged along the width direction of the ion beam, the ion beam penetrates through the separating slits to form mutually separated ion beams, the separating slits are used for filtering out ions with overlarge incident direction difference, and the speed direction difference of the ions coming out of each separating slit is ensured to be not large.
The ion beam converging assembly includes:
the spiral coils are provided with a group and correspond to the ion beam separation component, each spiral coil extends along the movement direction of the ion beam and is sequentially arranged along the width direction of the ion beam, and the separated ion beams are respectively converged by the spiral coils.
The spiral coils are mutually connected in series and are respectively and independently connected with a power supply, the spiral coils generate a uniform magnetic field after being electrified, and the ion beam advances spirally under the action of the uniform magnetic field and finally converges at the outlet end of the spiral coils.
The length of the spiral coil is smaller than the integral multiple of the one-time convergence length of the ion beam, so that the convergence point of the ion beam is positioned outside the outlet end of the spiral coil.
The ion beam diffusing assembly includes:
and the diffusion lenses are provided with a group and correspond to the positions of the ion beam convergence components, and respectively diffuse the converged ion beams.
The diffusion lens includes:
a diffusion slit which is formed by a non-magnetic component provided with a slender hole, corresponds to the position of a convergent point of the ion beam and only allows ions with specific mass and charges to pass through;
a diffusion yoke mounted on the diffusion slit;
and the diffusion electromagnet is arranged on the diffusion slit and corresponds to the position of the diffusion magnetic yoke, and the bending angle of the ion beam is adjusted by the diffusion magnet so as to adjust the current density distribution of the ion beam.
Each diffusion electromagnet is independently connected with a power supply.
The ion beam conditioning assembly comprises:
the Faraday cups are provided with a group, each Faraday cup corresponds to the position of the ion beam diffusion component and is sequentially arranged along the width direction of the ion beam, the Faraday cups detect the current density distribution of the ion beam and transmit the detection data to the measuring and measuring device, and in one embodiment of the invention, the Faraday cups are arranged behind the substrate and correspond to the positions of the diffusion lenses;
and the controller is electrically connected with the Faraday cup through the measuring device and is electrically connected with the ion beam converging component and the ion beam adjusting component, and the controller is used for adjusting the running states of the ion beam converging component and the ion beam adjusting component according to the current density distribution condition of the ion beam.
The invention has the advantages that:
the ribbon ion beam injection system adopts a separation slit to separate ribbon ion beams into mutually independent ion beams, filters ions with overlarge difference in incident direction, adopts a spiral coil to respectively converge the separated ion beams, adopts a diffusion lens to respectively diffuse the converged ion beams, injects the formed ribbon ion beams into a substrate, adopts a Faraday cup to detect the current density distribution of the ion beams, adopts a controller to adjust the running states of an ion beam convergence component and an ion beam adjusting component according to the current density distribution condition of the ion beams, can separate the ion beams with a wide belt into a plurality of areas which are distributed close to a point, modulates the ion beams in each small area, and finally polymerizes all the modulated ion beams to form the wide belt ion beams with high-uniformity current distribution, the modulation difficulty of the broadband beam ion beam is favorably reduced.
Drawings
Fig. 1 is a schematic diagram of a ribbon ion beam implantation system in accordance with the present invention;
fig. 2 is a schematic structural view of the lens unit.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 and 2, the ribbon ion beam implantation system of the present invention includes an ion beam generating assembly, an ion beam splitting assembly, the ion beam converging component is matched with the ion beam generating component, the ion beam generated by the ion beam generating component is separated by the ion beam filtering component to form a plurality of ion beams which are separated from each other, the ion beam converging component is matched with the ion beam separating component, the ion beams after separation are respectively converged by the ion beam converging component, the ion beam diffusing component is matched with the ion beam converging component, the converged ion beams are diffused by the ion beam adjusting component to enable adjacent ion beams to be overlapped with each other, and the ion beam adjusting component is matched with the ion beam diffusing component to adjust the running state of the ion beam diffusing component. The ion beam generating assembly is composed of a single ion source or a plurality of ion sources, and in this embodiment, the ion beam generating assembly is composed of a plurality of ion sources 100, each of which is arranged in sequence in the width direction of the ion beam. The ion beam separation component comprises separation slits 200, a group of separation slits are arranged, each separation slit corresponds to an ion source respectively in position and is sequentially arranged along the width direction of the ion beam, the ion beam penetrates through the separation slits to form mutually separated ion beams, the separation slits are used for filtering ions with overlarge incident direction difference, and the speed direction difference of the ions coming out of each separation slit is ensured to be not large. The ion beam convergence assembly comprises a spiral coil 300, the spiral coil is provided with a group and corresponds to the ion beam separation assembly in position, each spiral coil extends along the movement direction of the ion beam and is arranged in sequence along the width direction of the spiral coil, the separated ion beams are converged by the spiral coils respectively, in the embodiment, each spiral coil is placed at the outlet of the separation slit respectively, the ion beams coming out from the separation slit can enter the spiral coil immediately, and the change of the incident direction is small. The spiral coils are mutually connected in series and are respectively and independently connected with a power supply, the spiral coils generate a uniform magnetic field after being electrified, and the ion beam spirally advances under the action of the uniform magnetic field and finally converges at the outlet end of the spiral coils. The length of the spiral coil is smaller than the integral multiple of the one-time convergence length of the ion beam, so that the convergence point of the ion beam is positioned outside the outlet end of the spiral coil. The ion beam diffusion assembly includes a group of diffusion lenses 400, and the group of diffusion lenses corresponds to the position of the ion beam convergence assembly, and the converged ion beams are diffused by the diffusion lenses, in this embodiment, each diffusion lens is located outside the outlet end of the spiral coil and corresponds to the position of the convergence point of the ion beams. Specifically, as shown in fig. 2, the diffusion lens includes a diffusion slit 410, a diffusion yoke 420, and a diffusion electromagnet 430, the diffusion slit is formed of a nonmagnetic member having an elongated hole, corresponds to a convergence point of the ion beam, and allows only ions having a specific mass and a specific charge to pass therethrough, the diffusion yoke is mounted on the diffusion slit, the diffusion electromagnet is mounted on the diffusion slit, corresponds to a position of the diffusion yoke, and adjusts a bending angle of the ion beam by the diffusion magnet, thereby adjusting a current density distribution of the ion beam. Each diffusion electromagnet is independently connected with a power supply. The beam conditioning assembly includes a set of faraday cups 510, each corresponding to a respective ion beam diffuser assembly, and are arranged in sequence along the width direction of the ion beam, the current density distribution of the ion beam is detected by the Faraday cup, and the detection data is transmitted to the measuring device, in the present embodiment, the faraday cup is installed at the rear of the substrate and corresponds to the position of the diffusion lens, the controller is electrically connected to the faraday cup through the measuring device 530, and is electrically connected with the ion beam converging component and the ion beam adjusting component, the controller adjusts the running state of the ion beam converging component and the ion beam adjusting component according to the current density distribution condition of the ion beam, in this embodiment, the controller is connected to the power supply of the spiral coil and the power supply of the diffusion electromagnet, respectively, so as to control the operation states of the spiral coil and the diffusion electromagnet. The ribbon ion beam injection system adopts a separation slit to separate ribbon ion beams into mutually independent ion beams, filters ions with overlarge difference in incident direction, adopts a spiral coil to respectively converge the separated ion beams, adopts a diffusion lens to respectively diffuse the converged ion beams, injects the formed ribbon ion beams into a substrate, adopts a Faraday cup to detect the current density distribution of the ion beams, adopts a controller to adjust the running states of an ion beam convergence component and an ion beam adjusting component according to the current density distribution condition of the ion beams, can separate the ion beams with a wide belt into a plurality of areas which are distributed close to a point, modulates the ion beams in each small area, and finally polymerizes all the modulated ion beams to form the wide belt ion beams with high-uniformity current distribution, the modulation difficulty of the broadband beam ion beam is favorably reduced.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "left", "right", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings, or orientations or positional relationships that the products of the present invention are usually placed in when used, or orientations or positional relationships that are usually understood by those skilled in the art, and are used only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the equipment or the elements that are referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance. In the description of the present invention, it is also to be noted that, unless otherwise explicitly stated or limited, the terms "disposed" and "connected" are to be interpreted broadly, and for example, "connected" may be a fixed connection, a detachable connection, or an integral connection; can be mechanically or electrically connected; the connection may be direct or indirect via an intermediate medium, and may be a communication between the two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Claims (10)
1. A ribbon ion beam implantation system, comprising:
an ion beam generating assembly for generating a ribbon-shaped ion beam;
the ion beam filtering component is matched with the ion beam generating component and used for separating the ion beams generated by the ion beam generating component to form a plurality of mutually separated ion beams;
the ion beam converging component is matched with the ion beam separating component, and the ion beam converging component converges the separated ion beams respectively;
the ion beam diffusion component is matched with the ion beam convergence component, and the ion beam adjustment component diffuses the converged ion beams to enable adjacent ion beams to be mutually overlapped;
and the ion beam adjusting component is matched with the ion beam diffusion component, and the operating state of the ion beam diffusion component is adjusted by the ion beam adjusting component.
2. The ribbon ion beam implantation system of claim 1, wherein:
the ion beam generation component is composed of a single ion source or a plurality of ion sources;
when the ion beam generation assembly is composed of a plurality of ion sources, the ion sources are sequentially arranged along the width direction of the ion beam.
3. The ribbon ion beam implantation system of claim 1, wherein the ion beam splitting assembly comprises:
and the separation slits are provided with a group, correspond to the ion source respectively in position and are sequentially arranged along the width direction of the ion beam.
4. The ribbon ion beam implantation system of claim 1, wherein the ion beam convergence assembly comprises:
and the spiral coils are provided with a group and correspond to the ion beam separation assembly in position, and each spiral coil extends along the ion beam movement direction and is sequentially arranged along the width direction of the spiral coil.
5. The ribbon ion beam implantation system of claim 4, wherein:
the spiral coils are connected in series and are respectively and independently connected with a power supply.
6. The ribbon ion beam implantation system of claim 4, wherein:
the length of the spiral coil is smaller than the integral multiple of the one-time convergence length of the ion beam.
7. The ribbon ion beam implantation system of claim 1, wherein the ion beam flood assembly comprises:
and the diffusion lens is provided with a group and corresponds to the position of the ion beam converging component.
8. The ribbon ion beam implantation system of claim 7, wherein the diffuser lens comprises:
the diffusion slit is formed by a non-magnetic component provided with a slender hole and corresponds to the position of a convergence point of the ion beam;
a diffusion yoke mounted on the diffusion slit;
and the diffusion electromagnet is arranged on the diffusion slit and corresponds to the diffusion magnetic yoke in position.
9. The ribbon ion beam implantation system of claim 8, wherein:
each diffusion electromagnet is independently connected with a power supply.
10. The ribbon ion beam implantation system of claim 1, wherein the ion beam adjustment assembly comprises:
the Faraday cups are provided with a group, and each Faraday cup corresponds to the position of the ion beam diffusion component and is sequentially arranged along the width direction of the ion beam;
and the controller is electrically connected with the Faraday cup through the measuring device and is electrically connected with the ion beam converging assembly and the ion beam adjusting assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210650058.5A CN114724910A (en) | 2022-06-10 | 2022-06-10 | Ribbon ion beam implantation system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210650058.5A CN114724910A (en) | 2022-06-10 | 2022-06-10 | Ribbon ion beam implantation system |
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| CN114724910A true CN114724910A (en) | 2022-07-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210650058.5A Withdrawn CN114724910A (en) | 2022-06-10 | 2022-06-10 | Ribbon ion beam implantation system |
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| CN (1) | CN114724910A (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997030466A1 (en) * | 1996-02-16 | 1997-08-21 | Eaton Corporation | Large area uniform ion beam formation |
| US5866909A (en) * | 1995-02-18 | 1999-02-02 | Aea Technology Plc | Generator of ribbon-shaped ion beam |
| CN1329338A (en) * | 1999-11-12 | 2002-01-02 | 日新电机株式会社 | Method for controlling electrostatic lens and ion implantation device |
| JP2006139996A (en) * | 2004-11-11 | 2006-06-01 | Mitsui Eng & Shipbuild Co Ltd | Ion implanter and ion beam formation method |
| US20070176123A1 (en) * | 2006-01-31 | 2007-08-02 | Axcelis Technologies, Inc. | Ion implanter having a superconducting magnet |
| CN101322217A (en) * | 2005-11-15 | 2008-12-10 | 瓦里安半导体设备公司 | Technique for shaping a ribbon-shaped ion beam |
| TW200915463A (en) * | 2007-09-21 | 2009-04-01 | Varian Semiconductor Equipment | Techniques for optical ion beam metrology |
| CN101467227A (en) * | 2006-06-09 | 2009-06-24 | 瓦里安半导体设备公司 | Ion beam current uniformity monitor, ion implanter and related method |
| CN101606217A (en) * | 2007-03-29 | 2009-12-16 | 三井造船株式会社 | Ion implantation apparatus |
| CN114709122A (en) * | 2022-04-12 | 2022-07-05 | 浙江中科尚弘离子装备工程有限公司 | Ion implantation device and adjustment method |
-
2022
- 2022-06-10 CN CN202210650058.5A patent/CN114724910A/en not_active Withdrawn
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5866909A (en) * | 1995-02-18 | 1999-02-02 | Aea Technology Plc | Generator of ribbon-shaped ion beam |
| WO1997030466A1 (en) * | 1996-02-16 | 1997-08-21 | Eaton Corporation | Large area uniform ion beam formation |
| CN1329338A (en) * | 1999-11-12 | 2002-01-02 | 日新电机株式会社 | Method for controlling electrostatic lens and ion implantation device |
| JP2006139996A (en) * | 2004-11-11 | 2006-06-01 | Mitsui Eng & Shipbuild Co Ltd | Ion implanter and ion beam formation method |
| CN101322217A (en) * | 2005-11-15 | 2008-12-10 | 瓦里安半导体设备公司 | Technique for shaping a ribbon-shaped ion beam |
| US20070176123A1 (en) * | 2006-01-31 | 2007-08-02 | Axcelis Technologies, Inc. | Ion implanter having a superconducting magnet |
| CN101467227A (en) * | 2006-06-09 | 2009-06-24 | 瓦里安半导体设备公司 | Ion beam current uniformity monitor, ion implanter and related method |
| CN101606217A (en) * | 2007-03-29 | 2009-12-16 | 三井造船株式会社 | Ion implantation apparatus |
| TW200915463A (en) * | 2007-09-21 | 2009-04-01 | Varian Semiconductor Equipment | Techniques for optical ion beam metrology |
| CN114709122A (en) * | 2022-04-12 | 2022-07-05 | 浙江中科尚弘离子装备工程有限公司 | Ion implantation device and adjustment method |
Non-Patent Citations (1)
| Title |
|---|
| 刘洪祥等: "宽束离子源的均匀性分析", 《光电工程》 * |
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Application publication date: 20220708 |