CN114709122A - Ion implantation device and adjustment method - Google Patents
Ion implantation device and adjustment method Download PDFInfo
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- CN114709122A CN114709122A CN202210380033.8A CN202210380033A CN114709122A CN 114709122 A CN114709122 A CN 114709122A CN 202210380033 A CN202210380033 A CN 202210380033A CN 114709122 A CN114709122 A CN 114709122A
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 196
- 238000009792 diffusion process Methods 0.000 claims abstract description 100
- 238000001914 filtration Methods 0.000 claims abstract description 7
- 238000009826 distribution Methods 0.000 claims description 83
- 238000003860 storage Methods 0.000 claims description 19
- 230000001105 regulatory effect Effects 0.000 claims description 17
- 238000000926 separation method Methods 0.000 claims description 14
- 230000000712 assembly Effects 0.000 claims description 2
- 238000000429 assembly Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 20
- 238000005259 measurement Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
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Abstract
The invention provides an ion implantation device and an adjusting method, the device comprises an ion beam generating component, an ion beam separating component, an ion beam converging component, an ion beam diffusing component, a converging adjusting component, a diffusing adjusting component and an adjusting control component, wherein an ion beam filtering component is matched with the ion beam generating component to separate ion beams generated by the ion beam generating component, the ion beam converging component is matched with the ion beam separating component to converge the separated ion beams respectively, the ion beam diffusing component is matched with the ion beam converging component to diffuse the converged ion beams, the converging adjusting component is matched with the ion beam converging component to adjust the operating state of the ion beam converging component, the diffusing adjusting component is matched with the ion beam diffusing component to adjust the operating state of the ion beam diffusing component, and the adjusting control component is matched with the converging adjusting component and the diffusing adjusting component, and controlling the adjusting processes of the convergence adjusting assembly and the diffusion adjusting assembly.
Description
Technical Field
The present disclosure relates to ion implantation devices, and particularly to an ion implantation apparatus and method.
Background
A glass substrate or a semiconductor substrate used for a flat display device of an organic LED is generally doped by ion implantation. For a large substrate, if a conventional narrow-beam-width ion implanter is used for implantation, the implantation needs to be performed repeatedly, and the implantation time is extremely long, which is not beneficial to industrialization. In the case of a wide-band beam ion implanter, the width of the irradiated ion beam is greater than that of the substrate, and the ion implantation can be performed by one scan. However, the ion beam is required to have a highly uniform current density distribution under the condition of a large bandwidth, and a method for directly modulating the wide-band ion beam is mostly adopted at present, and although the method is simple, the control effect is poor, and the wide-band ion beam with high uniformity is difficult to realize. Therefore, there is a need for an ion implantation apparatus with optimized structure to overcome the above-mentioned drawbacks.
Disclosure of Invention
The invention aims to provide an ion implantation device and method, which are used for adjusting the current density distribution condition of an ion beam.
The technical scheme adopted by the invention for solving the technical problem is as follows:
an ion implantation apparatus, comprising:
an ion beam generating assembly for generating a ribbon-shaped ion beam;
the ion beam filtering component is matched with the ion beam generating component and used for separating the ion beams generated by the ion beam generating component to form a plurality of mutually separated ion beams;
the ion beam converging component is matched with the ion beam separating component, and the ion beam converging component converges the separated ion beams respectively;
the ion beam diffusion component is matched with the ion beam convergence component, and the ion beam adjustment component diffuses the converged ion beams to enable adjacent ion beams to be mutually overlapped;
the convergence adjusting component is matched with the ion beam convergence component, and the convergence adjusting component is used for adjusting the running state of the ion beam convergence component;
the diffusion regulating component is matched with the ion beam diffusion component, and the diffusion regulating component is used for regulating the running state of the ion beam diffusion component;
and the adjusting control assembly is matched with the convergence adjusting assembly and the diffusion adjusting assembly, and the adjusting control assembly controls the adjusting processes of the convergence adjusting assembly and the diffusion adjusting assembly.
The ion beam generation component is composed of a single ion source or a plurality of ion sources;
when the ion beam generation assembly is composed of a plurality of ion sources, the ion sources are sequentially arranged along the width direction of the ion beam.
The ion beam extraction assembly includes:
the ion source comprises a group of separating slits, each separating slit corresponds to the position of the ion source and is sequentially arranged along the width direction of the ion beam, the ion beam penetrates through the separating slits to form mutually separated ion beams, the separating slits are used for filtering out ions with overlarge incident direction difference, and the speed direction difference of the ions coming out of each separating slit is ensured to be not large.
The ion beam converging assembly includes:
the spiral coils are provided with a group of spiral coils, correspond to the ion beam separation component in position, extend along the movement direction of the ion beams respectively, are sequentially arranged along the width direction of the ion beams, and converge the separated ion beams respectively through the spiral coils;
the length of the spiral coil is smaller than the integral multiple of the one-time convergence length of the ion beam, so that the convergence point of the ion beam is positioned outside the outlet end of the spiral coil.
The ion beam diffusing assembly includes:
the diffusion lenses are provided with a group and correspond to the positions of the ion beam convergence components, and respectively diffuse the converged ion beams, and in one embodiment of the invention, each diffusion lens is respectively positioned outside the outlet end of the spiral coil and corresponds to the position of a convergence point of the ion beams;
wherein the diffusion lens includes:
a diffusion slit which is formed by a non-magnetic component provided with a slender hole, corresponds to the position of a convergent point of the ion beam and only allows ions with specific mass and charges to pass through;
a diffusion yoke mounted on the diffusion slit;
and the diffusion electromagnets are arranged on the diffusion slit and correspond to the diffusion magnet yokes in position, each diffusion electromagnet is independently connected with an adjustable diffusion power supply, and the diffusion magnets are used for adjusting the bending angle of the ion beam so as to adjust the current density distribution of the ion beam.
The convergence adjusting assembly includes:
the adjusting motors are respectively arranged on the guide support and are matched with the spiral coil, and the adjusting motors drive the spiral coil to move so as to adjust the distance between the spiral coil and the ion beam separation assembly;
the motor controller is electrically connected with each adjusting motor and can control the running state of the adjusting motor;
the convergence power supplies are provided with a group of adjustable power supplies respectively, and each convergence power supply is electrically connected with the spiral coil respectively to supply power to the spiral coil, adjust the running state of the spiral coil and further adjust the convergence state of the ion beams.
The diffusion regulating assembly includes:
and the diffusion power supplies are respectively an adjustable power supply, are respectively electrically connected with the diffusion electromagnet, supply power to the diffusion electromagnet, adjust the running state of the diffusion electromagnet and further adjust the diffusion state of the ion beam.
The regulation control subassembly includes:
the Faraday cups correspond to the positions of the ion beam diffusion assemblies respectively and are sequentially arranged along the width direction of the ion beam, and the current density distribution of the ion beam is detected by the Faraday cups;
the measuring module is electrically connected with the Faraday cups through the input and output module, and calculates the current density data detected by each Faraday cup to obtain total current density distribution data;
the central processing module is electrically connected with the measuring module and the storage module and compares current density distribution data preset in the storage module with current density distribution data obtained by the measuring module, and the central processing module is also electrically connected with the motor controller, the convergent power supply and the diffuse power supply through the input and output module and controls the running states of the motor controller, the convergent power supply and the diffuse power supply.
An ion implantation adjusting method is performed by the ion implantation device, and comprises the following steps:
the current density distribution obtained by the measuring module suddenly increases in a certain area, the total value of the whole current density is increased, but the whole current density distribution profile of the area is kept consistent with that of other areas, at the moment, the central processing module sends out an adjusting signal to the diffusion power supply at the corresponding position of the suddenly increased area, the voltage of the diffusion power supply is reduced, the current density distribution of the ion beam is reduced, the Faraday cups detect the current density distribution of the ion beam again, the measuring module calculates the current density data detected by each Faraday cup to obtain the total current density distribution data, the central processing module adjusts the diffusion power supply again according to the current density distribution data, and the operation is repeated for many times, so that the measured current density distribution is kept consistent with the current density distribution data preset in the storage module;
the current density distribution obtained by the measuring module drops suddenly in a certain area, at the moment, the central processing module sends an adjusting signal to a convergent power supply at a corresponding position of the drop-sudden area, the voltage of a spiral coil at the position is changed, so that the convergence point of the ion beam at the outlet end of the spiral coil moves towards the direction of the diffusion lens, the current density of the drop-sudden area is increased, the Faraday cups detect the current density distribution of the ion beam again, the measuring module calculates the current density data detected by each Faraday cup to obtain total current density distribution data, the central processing module adjusts the convergent power supply according to the current density distribution data again, and the operation is repeated for many times, so that the measured current density distribution is consistent with the current density distribution data preset in the storage module;
the current density distribution obtained by the measuring module is suddenly increased in a certain area and suddenly reduced in an adjacent area, at the moment, the central processing module sends an adjusting signal to the motor controller to enable the adjusting motor at the corresponding position to operate to drive the corresponding spiral coil to move, so that the current densities of the suddenly increased area and the suddenly reduced area are changed, the Faraday cups detect the current density distribution of the ion beams again, the measuring module calculates the current density data detected by each Faraday cup to obtain total current density distribution data, the central processing module controls the adjusting motor through the motor controller again according to the current density distribution data to enable the spiral coil to move, and the operation is repeated for many times, so that the measured current density distribution is consistent with the current density distribution data preset in the storage module.
The invention has the advantages that:
the ion implantation device adopts a separation slit to separate a ribbon ion beam into mutually independent ion beams, filters ions with overlarge difference in incident direction, adopts a spiral coil to respectively converge the separated ion beams, adopts a diffusion lens to respectively diffuse the converged ion beams, performs implantation operation on a substrate by the formed ribbon ion beam, also adopts a Faraday cup to detect the current density distribution of the ion beam, adopts a controller to adjust the operation states of an ion beam convergence component and an ion beam adjusting component according to the current density distribution condition of the ion beam, can separate the ion beam with a wide belt into a plurality of areas which are close to point-shaped distribution through the above operation, modulates the ion beam in each small area, and finally polymerizes all parts of the modulated ion beams to form the wide belt ion beam with high-uniformity current distribution, meanwhile, the central processing module is electrically connected with the measuring module and the storage module, compares current density distribution data preset in the storage module with current density distribution data obtained by the measuring module, is also electrically connected with the motor controller, the convergence power supply and the diffusion power supply through the input-output module, controls the running states of the motor controller, the convergence power supply and the diffusion power supply, is favorable for reducing the modulation difficulty of the broad-band beam, and improves the ion implantation precision.
Drawings
Fig. 1 is a schematic structural diagram of an ion implantation apparatus according to the present invention;
FIG. 2 is a schematic view of a diffuser lens configuration;
FIG. 3 is a graph of one of the ion implantation adjustment states, in which the solid line represents current density data detected by each Faraday cup and the dotted line represents current density data obtained by the measurement module;
FIG. 4 illustrates a second state of ion implantation conditioning;
fig. 5 shows the third adjustment state of ion implantation.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, the ion implantation apparatus of the present invention includes an ion beam generating assembly, an ion beam separating assembly, an ion beam converging assembly, an ion beam diverging assembly, a converging adjusting assembly, a diverging adjusting assembly, and an adjusting control assembly, wherein the ion beam generating assembly generates a ribbon-shaped ion beam, the ion beam filtering assembly cooperates with the ion beam generating assembly, the ion beam filtering assembly separates the ion beam generated by the ion beam generating assembly to form a plurality of ion beams separated from each other, the ion beam converging assembly cooperates with the ion beam separating assembly, the ion beam converging assembly converges the separated ion beams respectively, the ion beam diverging assembly cooperates with the ion beam converging assembly, the ion beam adjusting assembly diverges the converged ion beam to overlap adjacent ion beams, the converging adjusting assembly cooperates with the ion beam converging assembly, and the converging adjusting assembly adjusts the operating state of the ion beam converging assembly, the diffusion regulating component is matched with the ion beam diffusion component, the operation state of the ion beam diffusion component is regulated by the diffusion regulating component, the regulating control component is matched with the convergence regulating component and the diffusion regulating component, and the regulating process of the convergence regulating component and the diffusion regulating component is controlled by the regulating control component.
The ion beam generation component is composed of a single ion source or a plurality of ion sources; in this embodiment, the ion beam generating assembly is composed of a plurality of ion sources 100, each of which is arranged in sequence along the width direction of the ion beam.
The ion beam separation component comprises separation slits 200, a group of separation slits are arranged, each separation slit corresponds to an ion source respectively in position and is sequentially arranged along the width direction of the ion beam, the ion beam penetrates through the separation slits to form mutually separated ion beams, the separation slits are used for filtering ions with overlarge incident direction difference, and the speed direction difference of the ions coming out of each separation slit is ensured to be not large.
The ion beam converging component comprises a spiral coil 300, the spiral coils are provided with a group and correspond to the ion beam separating component in position, each spiral coil extends along the movement direction of the ion beam and is sequentially arranged along the width direction of the ion beam, and the separated ion beams are converged by the spiral coils respectively; the length of the spiral coil is smaller than the integral multiple of the one-time convergence length of the ion beam, so that the convergence point of the ion beam is positioned outside the outlet end of the spiral coil.
The ion beam diffusion assembly comprises a group of diffusion lenses 400, the group of diffusion lenses corresponds to the position of the ion beam convergence assembly, and the converged ion beams are respectively diffused by the diffusion lenses;
specifically, as shown in fig. 2, the diffusion lens includes a diffusion slit 410, a diffusion yoke 420 and diffusion electromagnets 430, the diffusion slit is formed by a non-magnetic member having an elongated hole and corresponds to a convergence point of the ion beam, only ions having a specific mass and charges pass through the diffusion slit, the diffusion yoke is mounted on the diffusion slit, the diffusion electromagnets are mounted on the diffusion slit and correspond to the diffusion yoke, each diffusion electromagnet is independently connected to an adjustable diffusion power source, and the diffusion electromagnets adjust a bending angle of the ion beam to adjust a current density distribution of the ion beam.
The convergence adjusting assembly comprises an adjusting motor 510, a motor controller 520 and a convergence power source 530, the adjusting motor is provided with a group, each adjusting motor is respectively installed on the guide support and matched with the spiral coil, the spiral coil is driven by the adjusting motor to move, the distance between the spiral coil and the ion beam separation assembly is adjusted, the motor controller is electrically connected with each adjusting motor, the operation state of each adjusting motor can be controlled, the convergence power source is provided with a group and is respectively an adjustable power source, each convergence power source is respectively electrically connected with the spiral coil, power is supplied to the spiral coil, the operation state of the spiral coil is adjusted, and further the convergence state of the ion beams is adjusted.
The diffusion adjusting assembly comprises a diffusion power supply 600, the diffusion power supplies are provided with a group of adjustable power supplies respectively, and each diffusion power supply is electrically connected with a diffusion electromagnet respectively, supplies power to the diffusion electromagnet, adjusts the running state of the diffusion electromagnet and further adjusts the diffusion state of the ion beam.
The adjustment control assembly includes faraday cups 710, a measurement module 720, a central processing module 730, and a storage module 740, each faraday cup corresponding to a position of the ion beam diffuser assembly, the central processing module is electrically connected with the measuring module and the storage module, and the central processing module is also electrically connected with the motor controller, the convergent power supply and the diffusion power supply through the input and output module to control the running states of the motor controller, the convergent power supply and the diffusion power supply.
The ion implantation adjusting method provided by the invention is carried out by adopting the ion implantation device, and comprises the following steps:
as shown in fig. 3, the current density distribution obtained by the measurement module suddenly increases in a certain area, and the total value of the overall current density increases, but the overall current density distribution profile of the area keeps consistent with other areas, at this time, the central processing module sends out an adjustment signal to the diffusion power supply at the corresponding position of the suddenly increased area, the voltage of the diffusion power supply is reduced, so that the current density of the suddenly increased area is reduced, the faraday cups detect the current density distribution of the ion beam again, the measurement module calculates the current density data detected by each faraday cup to obtain the total current density distribution data, the central processing module adjusts the diffusion power supply again according to the current density distribution data, and the process is repeated for multiple times, so that the measured current density distribution keeps consistent with the current density distribution data preset in the storage module;
as shown in fig. 4, the current density distribution obtained by the measurement module drops suddenly in a certain area, at this time, the central processing module sends an adjustment signal to the convergent power supply at the corresponding position of the drop-sudden area, so that the voltage of the spiral coil at the position changes, the ion beam moves towards the direction of the diffusion lens at the convergent point at the outlet end of the spiral coil, so that the current density of the drop-sudden area increases, the faraday cups detect the current density distribution of the ion beam again, the measurement module calculates the current density data detected by each faraday cup to obtain total current density distribution data, the central processing module adjusts the convergent power supply again according to the current density distribution data, and the process is repeated for many times, so that the measured current density distribution keeps consistent with the current density distribution data preset in the storage module;
as shown in fig. 5, the current density distribution obtained by the measurement module suddenly increases in a certain area and suddenly decreases in an adjacent area, at this time, the central processing module sends an adjustment signal to the motor controller to operate the adjustment motor at the corresponding position to drive the corresponding spiral coil to move, so that the current densities of the sudden increase area and the sudden decrease area change, the faraday cup detects the current density distribution of the ion beam again, the measurement module calculates the current density data detected by each faraday cup to obtain total current density distribution data, the central processing module controls the adjustment motor through the motor controller again according to the current density distribution data to move the spiral coil, and the steps are repeated for many times, so that the measured current density distribution is consistent with the current density distribution data preset in the storage module.
The ion implantation device adopts a separation slit to separate a ribbon ion beam into mutually independent ion beams, filters ions with overlarge difference in incident direction, adopts a spiral coil to respectively converge the separated ion beams, adopts a diffusion lens to respectively diffuse the converged ion beams, performs implantation operation on a substrate by the formed ribbon ion beam, also adopts a Faraday cup to detect the current density distribution of the ion beam, adopts a controller to adjust the operation states of an ion beam convergence component and an ion beam adjusting component according to the current density distribution condition of the ion beam, can separate the ion beam with a wide belt into a plurality of areas which are close to point-shaped distribution through the above operation, modulates the ion beam in each small area, and finally polymerizes all parts of the modulated ion beams to form the wide belt ion beam with high-uniformity current distribution, meanwhile, the central processing module is electrically connected with the measuring module and the storage module, compares current density distribution data preset in the storage module with current density distribution data obtained by the measuring module, is also electrically connected with the motor controller, the convergence power supply and the diffusion power supply through the input-output module, controls the running states of the motor controller, the convergence power supply and the diffusion power supply, is favorable for reducing the modulation difficulty of the broad-band beam, and improves the ion implantation precision.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "left", "right", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings, or orientations or positional relationships that the products of the present invention are usually placed in when used, or orientations or positional relationships that are usually understood by those skilled in the art, and are used only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the equipment or the elements that are referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance. In the description of the present invention, it is also to be noted that, unless otherwise explicitly stated or limited, the terms "disposed" and "connected" are to be interpreted broadly, and for example, "connected" may be a fixed connection, a detachable connection, or an integral connection; can be mechanically or electrically connected; the connection may be direct or indirect via an intermediate medium, and may be a communication between the two elements. The specific meanings of the above terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.
Claims (9)
1. An ion implantation apparatus, comprising:
an ion beam generating assembly for generating a ribbon-shaped ion beam;
the ion beam filtering component is matched with the ion beam generating component and used for separating the ion beams generated by the ion beam generating component to form a plurality of mutually separated ion beams;
the ion beam converging component is matched with the ion beam separating component, and the ion beam converging component converges the separated ion beams respectively;
the ion beam diffusion component is matched with the ion beam convergence component, and the ion beam adjustment component diffuses the converged ion beams to enable adjacent ion beams to be mutually overlapped;
the convergence adjusting component is matched with the ion beam convergence component, and adjusts the running state of the ion beam convergence component;
the diffusion regulating component is matched with the ion beam diffusion component, and the diffusion regulating component is used for regulating the running state of the ion beam diffusion component;
and the adjusting control assembly is matched with the convergence adjusting assembly and the diffusion adjusting assembly, and the adjusting control assembly controls the adjusting process of the convergence adjusting assembly and the diffusion adjusting assembly.
2. The ion implantation apparatus of claim 1, wherein the ion beam generation assembly comprises a single ion source or a plurality of ion sources;
when the ion beam generation assembly is composed of a plurality of ion sources, the ion sources are sequentially arranged along the width direction of the ion beam.
3. An ion implantation apparatus as defined in claim 1, wherein the ion beam splitting assembly comprises:
and the separation slits are provided with a group, correspond to the ion source respectively in position and are sequentially arranged along the width direction of the ion beam.
4. An ion implantation apparatus as defined in claim 1, wherein the ion beam focusing assembly comprises:
the spiral coils are provided with a group and correspond to the positions of the ion beam separation components, and each spiral coil extends along the movement direction of the ion beams and is sequentially arranged along the width direction of the ion beam;
the length of the spiral coil is smaller than the integral multiple of the one-time convergence length of the ion beam.
5. An ion implantation apparatus as defined in claim 1, wherein the ion beam diffusing assembly comprises:
the diffusion lenses are provided with a group and correspond to the ion beam convergence assembly in position, and each diffusion lens is positioned outside the outlet end of the spiral coil and corresponds to the convergence point of the ion beams;
wherein the diffusion lens includes:
the diffusion slit is formed by a non-magnetic component provided with a slender hole and corresponds to the position of a convergence point of the ion beam;
a diffusion yoke mounted on the diffusion slit;
and the diffusion electromagnet is arranged on the diffusion slit and corresponds to the diffusion magnetic yoke in position.
6. An ion implantation apparatus as defined in claim 4, wherein the convergence adjusting part comprises:
the adjusting motors are provided with a group, and each adjusting motor is respectively arranged on the guide bracket and matched with the spiral coil;
the motor controller is electrically connected with each adjusting motor and can control the running state of the adjusting motor;
and the convergence power supplies are provided with a group of adjustable power supplies respectively, and are respectively electrically connected with the spiral coils.
7. An ion implantation apparatus as defined in claim 5, wherein the diffusion regulating assembly comprises:
and the diffusion power supplies are provided with one group and are respectively adjustable power supplies, and each diffusion power supply is electrically connected with the diffusion electromagnet.
8. An ion implantation apparatus as defined in claim 6 or 7, wherein the adjustment control module comprises:
the Faraday cups correspond to the positions of the ion beam diffusion assemblies respectively and are sequentially arranged along the width direction of the ion beam, and the current density distribution of the ion beam is detected by the Faraday cups;
the measuring module is electrically connected with the Faraday cups through the input and output module, and calculates the current density data detected by each Faraday cup to obtain total current density distribution data;
the central processing module is electrically connected with the measuring module and the storage module and compares current density distribution data preset in the storage module with current density distribution data obtained by the measuring module, and the central processing module is also electrically connected with the motor controller, the convergent power supply and the diffuse power supply through the input and output module and controls the running states of the motor controller, the convergent power supply and the diffuse power supply.
9. An ion implantation adjusting method performed by the ion implantation apparatus according to claim 8, comprising:
the current density distribution obtained by the measuring module suddenly increases in a certain area, the total value of the whole current density is increased, but the whole current density distribution profile of the area is kept consistent with that of other areas, at the moment, the central processing module sends out an adjusting signal to the diffusion power supply at the corresponding position of the suddenly increased area, the voltage of the diffusion power supply is reduced, the current density distribution of the ion beam is reduced, the Faraday cups detect the current density distribution of the ion beam again, the measuring module calculates the current density data detected by each Faraday cup to obtain the total current density distribution data, the central processing module adjusts the diffusion power supply again according to the current density distribution data, and the operation is repeated for many times, so that the measured current density distribution is kept consistent with the current density distribution data preset in the storage module;
the current density distribution obtained by the measuring module drops suddenly in a certain area, at the moment, the central processing module sends an adjusting signal to a convergent power supply at a corresponding position of the drop-sudden area, the voltage of a spiral coil at the position is changed, so that the convergence point of the ion beam at the outlet end of the spiral coil moves towards the direction of the diffusion lens, the current density of the drop-sudden area is increased, the Faraday cups detect the current density distribution of the ion beam again, the measuring module calculates the current density data detected by each Faraday cup to obtain total current density distribution data, the central processing module adjusts the convergent power supply according to the current density distribution data again, and the operation is repeated for many times, so that the measured current density distribution is consistent with the current density distribution data preset in the storage module;
the current density distribution obtained by the measuring module is suddenly increased in a certain area and suddenly reduced in an adjacent area, at the moment, the central processing module sends an adjusting signal to the motor controller to enable the adjusting motor at the corresponding position to operate to drive the corresponding spiral coil to move, so that the current densities of the suddenly increased area and the suddenly reduced area are changed, the Faraday cups detect the current density distribution of the ion beams again, the measuring module calculates the current density data detected by each Faraday cup to obtain total current density distribution data, the central processing module controls the adjusting motor through the motor controller again according to the current density distribution data to enable the spiral coil to move, and the operation is repeated for many times, so that the measured current density distribution is consistent with the current density distribution data preset in the storage module.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114724910A (en) * | 2022-06-10 | 2022-07-08 | 浙江中科尚弘离子装备工程有限公司 | Ribbon ion beam implantation system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114724910A (en) * | 2022-06-10 | 2022-07-08 | 浙江中科尚弘离子装备工程有限公司 | Ribbon ion beam implantation system |
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