CN114709122A - An ion implantation device and adjustment method - Google Patents

Abstract

The invention provides an ion implantation device and an adjusting method, the device comprises an ion beam generating component, an ion beam separating component, an ion beam converging component, an ion beam diffusing component, a converging adjusting component, a diffusing adjusting component and an adjusting control component, wherein an ion beam filtering component is matched with the ion beam generating component to separate ion beams generated by the ion beam generating component, the ion beam converging component is matched with the ion beam separating component to converge the separated ion beams respectively, the ion beam diffusing component is matched with the ion beam converging component to diffuse the converged ion beams, the converging adjusting component is matched with the ion beam converging component to adjust the operating state of the ion beam converging component, the diffusing adjusting component is matched with the ion beam diffusing component to adjust the operating state of the ion beam diffusing component, and the adjusting control component is matched with the converging adjusting component and the diffusing adjusting component, and controlling the adjusting processes of the convergence adjusting assembly and the diffusion adjusting assembly.

Description

An ion implantation device and adjustment method

technical field

The present invention relates to ion implantation equipment, in particular to an ion implantation device and method.

Background technique

The glass substrate or semiconductor substrate used in the flat display device of the organic LED is usually doped by ion implantation. For large substrates, if a conventional narrow beam width ion implanter is used for implantation, multiple round-trip implants are required, and the required implantation time is extremely long, which is not conducive to industrialization. In the broadband beam ion implanter, that is, the width of the irradiated ion beam is larger than the width of the substrate, at this time, the ion implantation can be completed by one scan. However, this requires the ion beam to have a highly uniform current density distribution in the case of a large bandwidth. At present, the method of directly modulating the broadband beam ion beam is mostly used. Although this method is simple, the control effect is poor, and it is difficult to achieve high uniformity. wide ion belt beam. Therefore, it is necessary to optimize the structure of this ion implantation device to overcome the above-mentioned defects.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide an ion implantation device and method, so as to adjust the current density distribution of the ion beam.

The technical scheme adopted by the present invention for solving its technical problem is:

An ion implantation device, comprising:

The ion beam generating assembly generates a ribbon ion beam from the ion beam generating assembly;

an ion beam separation component, the ion beam filter component cooperates with the ion beam generation component, and the ion beam filter component separates the ion beam generated by the ion beam generation component to form a plurality of mutually separated ion beams;

an ion beam converging assembly, the ion beam converging assembly cooperates with the ion beam separating assembly, and the ion beam converging assembly separates the separated ion beams;

an ion beam diffusing assembly, the ion beam diffusing assembly cooperates with the ion beam converging assembly, and the ion beam adjusting assembly diffuses the converged ion beams so that adjacent ion beams overlap each other;

a convergence adjustment component, the convergence adjustment component cooperates with the ion beam convergence component, and the convergence adjustment component adjusts the operation state of the ion beam convergence component;

a diffusion adjustment assembly, the diffusion adjustment assembly cooperates with the ion beam diffusion assembly, and the diffusion adjustment assembly adjusts the operating state of the ion beam diffusion assembly;

An adjustment control assembly, the adjustment control assembly cooperates with the convergence adjustment assembly and the diffusion adjustment assembly, and the adjustment control assembly controls the adjustment process of the convergence adjustment assembly and the diffusion adjustment assembly.

The ion beam generating assembly is composed of a single ion source or multiple ion sources;

When the ion beam generating assembly is composed of a plurality of ion sources, each ion source is sequentially arranged along the width direction of the ion beam.

The ion beam separation assembly includes:

The separation slit is provided with a group of separation slits, each separation slit corresponds to the position of the ion source, and is arranged in sequence along the width direction of the ion beam, and the ion beam passes through the separation slit to form mutually separated ions The function of the separation slit is to filter out the ions whose incident directions are too different to ensure that the ion velocity directions from each separation slit are not much different.

The ion beam focusing assembly includes:

The helical coils are provided with one set and correspond to the positions of the ion beam separation components. Each helical coil extends along the moving direction of the ion beam and is sequentially arranged along its width direction. Convergence separately, in an embodiment of the present invention, each helical coil is placed at the exit of the separation slit, to ensure that the ion beam from the separation slit can enter the helical coil immediately, and the incident direction changes little, the helical coil After power-on, a uniform magnetic field is generated, and the ion beam spirals forward under the action of the uniform magnetic field, and finally converges at the exit end of the spiral coil;

The length of the helical coil is less than an integral multiple of the length of the ion beam converging once, so that the converging point of the ion beam is located outside the exit end of the helical coil.

The ion beam diffuser assembly includes:

A diffusing lens is provided with a set of diffusing lenses corresponding to the positions of the ion beam converging components. The condensed ion beams are diffused by the diffusing lenses. In an embodiment of the present invention, each diffusing lens is located at the exit of the helical coil. outside the end, and corresponds to the position of the convergence point of the ion beam;

Among them, the diffuser lens includes:

a diffusion slit, which is composed of a non-magnetic member with an elongated hole, and corresponds to the position of the convergence point of the ion beam, and only allows ions of specific mass and charge to pass through;

a diffusion yoke, the diffusion yoke is mounted on the diffusion slit;

The diffusion electromagnet is installed on the diffusion slit and corresponds to the position of the diffusion yoke. Each diffusion electromagnet is independently connected to an adjustable diffusion power supply, and the bending angle of the ion beam is adjusted by the diffusion magnet, thereby adjusting the ion beam. The current density distribution of the beam.

Convergence conditioning components include:

Adjusting motor, the adjusting motor is provided with a group, each adjusting motor is respectively installed on the guide bracket, and cooperates with the helical coil, the adjusting motor drives the helical coil to move, and adjusts the distance between the helical coil and the ion beam separation component;

A motor controller, which is electrically connected with each regulating motor and can control the running state of the regulating motor;

Converging power sources, which are provided with a set of adjustable power sources respectively, each converging power source is electrically connected to the helical coil, supplies power to the helical coil, adjusts the operating state of the helical coil, and then adjusts the converging state of the ion beam.

Diffusion adjustment components include:

The diffusion power supply is provided with a group of adjustable power supplies. Each diffusion power supply is electrically connected to the diffusion electromagnet, and supplies power to the diffusion electromagnet to adjust the operating state of the diffusion electromagnet, thereby adjusting the diffusion of the ion beam. state.

Modulation control components include:

Faraday cup, each Faraday cup of the Faraday cup corresponds to the position of the ion beam diffusion assembly, and is arranged in sequence along the width direction of the ion beam, and the current density distribution of the ion beam is detected by the Faraday cup;

A measurement module, the measurement module is electrically connected to the Faraday cup through the input and output module, and the measurement module calculates the current density data detected by each Faraday cup to obtain the total current density distribution data;

The central processing module and the storage module, the central processing module is electrically connected with the measurement module and the storage module, and the preset current density distribution data in the storage module is compared with the current density distribution data obtained by the measurement module, and the central processing module also passes The input and output module is electrically connected with the motor controller, the convergent power supply and the diffused power supply, and controls the running states of the motor controller, the converged power supply and the diffused power supply.

An ion implantation adjustment method, using the above-mentioned ion implantation device, comprising:

The current density distribution obtained by the measurement module suddenly increases in a certain area, and the total current density increases, but the overall current density distribution profile in this area remains consistent with other areas. At this time, the central processing module moves to the corresponding position of the sudden increase area. The diffusion power supply sends out an adjustment signal, reduces its voltage, and reduces the current density in the sudden increase area. The Faraday cup detects the current density distribution of the ion beam again, and the measurement module calculates the current density data detected by each Faraday cup. , obtain the total current density distribution data, the central processing module adjusts the diffusion power supply again according to the current density distribution data, and repeats this for many times, so that the measured current density distribution and the preset current density distribution data in the storage module are kept consistent;

The current density distribution obtained by the measurement module suddenly drops in a certain area. At this time, the central processing module sends an adjustment signal to the convergent power supply at the corresponding position of the sudden drop area, so that the voltage of the spiral coil at this position changes, so that the ion beam is at the outlet of the spiral coil. The convergence point at the end moves to the direction of the diffuser lens, which increases the current density in the sudden drop area. The Faraday cup detects the current density distribution of the ion beam again, and the measurement module calculates the current density data detected by each Faraday cup to obtain The total current density distribution data is obtained, and the central processing module adjusts the convergent power supply again according to the current density distribution data, and this is repeated many times, so that the measured current density distribution is consistent with the preset current density distribution data in the storage module;

The current density distribution obtained by the measurement module suddenly increases in a certain area and suddenly drops in the adjacent area. At this time, the central processing module sends an adjustment signal to the motor controller to make the adjustment motor in the corresponding position run and drive the corresponding spiral coil to move. , to change the current density in the sudden increase area and the sudden drop area. The Faraday cup detects the current density distribution of the ion beam again, and the measurement module calculates the current density data detected by each Faraday cup to obtain the total current density. Distribution data, the central processing module controls the motor controller through the motor controller again according to the current density distribution data to move the helical coil, and this is repeated many times, so that the measured current density distribution matches the preset current density distribution in the storage module. Data remains consistent.

The advantages of the present invention are:

The ion implantation device uses separation slits to separate the ribbon ion beams to form mutually independent ion beams, filters out ions whose incident directions are too different, and uses helical coils to separate the separated ion beams. The resulting ion beams are diffused respectively, and the formed ribbon ion beams are implanted into the substrate, and the Faraday cup is used to detect the current density distribution of the ion beams. Through the above operations, the ion beam of the broadband beam can be separated into a plurality of regions close to the point-like distribution, and then the ion beam is modulated in each small region, and finally the modulated ion beam can be adjusted. Each part of the ion beam is aggregated to form a broadband beam ion beam with high uniformity current distribution. At the same time, the central processing module is electrically connected to the measurement module and the storage module, and the preset current density distribution data in the storage module is compared with the measurement module. The current density distribution data are compared, and the central processing module is also electrically connected to the motor controller, the convergent power supply and the diffusion power supply through the input and output modules to control the operating states of the motor controller, the converged power supply and the diffusion power supply, which is beneficial to reduce the broadband beam ion The modulation difficulty of the beam is improved, and the ion implantation accuracy is improved.

Description of drawings

1 is a schematic structural diagram of an ion implantation device proposed by the present invention;

FIG. 2 is a schematic structural diagram of a diffuser lens;

Figure 3 is one of the ion implantation adjustment states, the solid line in the figure is the current density data detected by each Faraday cup, and the dotted line is the current density data obtained by the measurement module;

FIG. 4 is the second ion implantation adjustment state;

FIG. 5 is the third state of ion implantation adjustment.

Detailed ways

In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be described clearly and completely below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, embodiments of the present invention. The components of the embodiments of the invention generally described and illustrated in the drawings herein may be arranged and designed in a variety of different configurations. Thus, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

As shown in FIG. 1 , the ion implantation device proposed by the present invention includes an ion beam generation assembly, an ion beam separation assembly, an ion beam convergence assembly, an ion beam diffusion assembly, a convergence adjustment assembly, a diffusion adjustment assembly and an adjustment control assembly, and an ion beam generation assembly. A ribbon-shaped ion beam is generated, the ion beam filter component cooperates with the ion beam generation component, and the ion beam filter component separates the ion beam generated by the ion beam generation component to form a number of mutually separated ion beams, and the ion beam convergence component is separated from the ion beam. The components cooperate, and the separated ion beams are converged by the ion beam converging component. The ion beam diffusing component cooperates with the ion beam converging component, and the ion beam adjusting component diffuses the converged ion beams so that adjacent ion beams intersect each other. Stacked, the convergence adjustment assembly cooperates with the ion beam convergence assembly, the convergence adjustment assembly adjusts the operating state of the ion beam convergence assembly, the diffusion adjustment assembly cooperates with the ion beam diffusion assembly, and the diffusion adjustment assembly adjusts the operating state of the ion beam diffusion assembly. Adjustment, the adjustment control assembly cooperates with the convergence adjustment assembly and the diffusion adjustment assembly, and the adjustment control assembly controls the adjustment process of the convergence adjustment assembly and the diffusion adjustment assembly.

The ion beam generating assembly is composed of a single ion source or multiple ion sources; in this embodiment, the ion beam generating assembly is composed of a plurality of ion sources 100 , and the ion sources are sequentially arranged along the width direction of the ion beam.

The ion beam separation assembly includes separation slits 200, and a set of separation slits is provided. Each separation slit corresponds to the position of the ion source and is arranged in sequence along the width direction of the ion beam. The ion beam passes through the separation slits. The ion beams separated from each other are formed, and the function of the separation slit is to filter out the ions whose incident directions are too different, so as to ensure that the ion velocity directions from each separation slit are not much different.

The ion beam converging assembly includes helical coils 300. There are one set of helical coils, which correspond to the positions of the ion beam separation assembly. The subsequent ion beams are respectively converged. In this embodiment, each helical coil is placed at the exit of the separation slit to ensure that the ion beam from the separation slit can enter the helical coil immediately, and the incident direction does not change much. After the helical coil is energized, a uniform magnetic field is generated, and the ion beam spirals forward under the action of the uniform magnetic field, and finally converges at the exit end of the helical coil; The point is outside the exit end of the helical coil.

The ion beam diffusing assembly includes a diffusing lens 400. The diffusing lens is provided with a group and corresponds to the position of the ion beam converging assembly. The condensed ion beam is diffused by the diffusing lens. In an embodiment of the present invention, the diffusing lenses are respectively It is located outside the exit end of the helical coil, and corresponds to the position of the convergence point of the ion beam;

Specifically, as shown in FIG. 2, the diffusing lens includes a diffusing slit 410, a diffusing yoke 420 and a diffusing electromagnet 430. The diffusing slit is composed of a non-magnetic member provided with an elongated hole, and corresponds to the position of the convergence point of the ion beam, Only ions of specific mass and charge pass through, the diffusion yoke is installed on the diffusion slit, the diffusion electromagnet is installed on the diffusion slit, and corresponds to the position of the diffusion yoke, each diffusion electromagnet is independently connected to the adjustable diffusion The power supply adjusts the bending angle of the ion beam by the diffusion magnet, thereby adjusting the current density distribution of the ion beam.

The convergence adjustment assembly includes an adjustment motor 510, a motor controller 520 and a convergence power supply 530. There is a set of adjustment motors. Each adjustment motor is installed on the guide bracket and cooperates with the helical coil. The adjustment motor drives the helical coil to move. The distance between it and the ion beam separation component is adjusted, the motor controller is electrically connected with each adjustment motor, and can control the running state of the adjustment motor. The helical coil is electrically connected to supply power to the helical coil to adjust the operating state of the helical coil, thereby adjusting the convergence state of the ion beam.

The diffusion adjustment component includes a diffusion power supply 600. There is a set of diffusion power supplies, which are respectively adjustable power supplies. Each diffusion power supply is electrically connected to the diffusion electromagnet, and supplies power to the diffusion electromagnet to adjust the operating state of the diffusion electromagnet, and then adjust the operation state of the diffusion electromagnet. The diffusion state of the ion beam.

The adjustment control assembly includes a Faraday cup 710, a measurement module 720, a central processing module 730 and a storage module 740. Each Faraday cup corresponds to the position of the ion beam diffusion assembly, and is arranged in sequence along the width direction of the ion beam. The cup detects the current density distribution of the ion beam. The measurement module is electrically connected to the Faraday cup through the input and output module. The measurement module calculates the current density data detected by each Faraday cup to obtain the total current density distribution data. The processing module is electrically connected with the measurement module and the storage module, and compares the preset current density distribution data in the storage module with the current density distribution data obtained by the measurement module, and the central processing module also communicates with the motor controller, The convergent power supply and the diffused power supply are electrically connected to control the running states of the motor controller, the converged power supply and the diffused power supply.

The ion implantation adjustment method proposed by the present invention adopts the above-mentioned ion implantation device, including:

As shown in Figure 3, the current density distribution obtained by the measurement module suddenly increases in a certain area, and the total current density increases, but the overall current density distribution profile in this area remains consistent with other areas. The diffusion power supply at the corresponding position of the increase area sends out an adjustment signal to reduce its voltage to reduce the current density in the sudden increase area. The Faraday cup detects the current density distribution of the ion beam again, and the measurement module measures the current detected by each Faraday cup The density data is calculated to obtain the total current density distribution data. The central processing module adjusts the diffusion power supply again according to the current density distribution data. This is repeated many times, so that the measured current density distribution matches the preset current in the storage module. The density distribution data remains consistent;

As shown in Figure 4, the current density distribution obtained by the measurement module suddenly drops in a certain area. At this time, the central processing module sends an adjustment signal to the convergent power supply at the corresponding position of the sudden drop area, so that the voltage of the spiral coil at this position changes, so that the ion beam The convergence point at the exit end of the helical coil moves to the direction of the diffuser lens, which increases the current density in the sudden drop area. The Faraday cup detects the current density distribution of the ion beam again, and the measurement module measures the current density data detected by each Faraday cup. Calculation is performed to obtain the total current density distribution data, and the central processing module adjusts the convergent power supply again according to the current density distribution data, and this is repeated many times, so that the measured current density distribution is the same as the preset current density distribution in the storage module. data remains consistent;

As shown in Figure 5, the current density distribution obtained by the measurement module suddenly increases in a certain area and suddenly drops in the adjacent area. At this time, the central processing module sends an adjustment signal to the motor controller to make the adjustment motor at the corresponding position run, driving the corresponding The helical coil moves to change the current density in the sudden increase area and the sudden drop area. The Faraday cup detects the current density distribution of the ion beam again, and the measurement module calculates the current density data detected by each Faraday cup to obtain a total. According to the current density distribution data, the central processing module controls the regulating motor through the motor controller again according to the current density distribution data, so that the spiral coil moves. The current density distribution data remains consistent.

The ion implantation device uses separation slits to separate the ribbon ion beams to form mutually independent ion beams, filters out ions whose incident directions are too different, and uses helical coils to separate the separated ion beams. The resulting ion beams are diffused respectively, and the formed ribbon ion beams are implanted into the substrate, and the Faraday cup is used to detect the current density distribution of the ion beams. Through the above operations, the ion beam of the broadband beam can be separated into a plurality of regions close to the point-like distribution, and then the ion beam is modulated in each small region, and finally the modulated ion beam can be adjusted. Each part of the ion beam is aggregated to form a broadband beam ion beam with high uniformity current distribution. At the same time, the central processing module is electrically connected to the measurement module and the storage module, and the preset current density distribution data in the storage module is compared with the measurement module. The current density distribution data are compared, and the central processing module is also electrically connected to the motor controller, the convergent power supply and the diffusion power supply through the input and output modules to control the operating states of the motor controller, the converged power supply and the diffusion power supply, which is beneficial to reduce the broadband beam ion The modulation difficulty of the beam is improved, and the ion implantation accuracy is improved.

In the description of the present invention, it should be noted that the orientations or positional relationships indicated by the terms "upper", "lower", "inner", "outer", "left", "right", etc. are based on those shown in the accompanying drawings. The orientation or positional relationship, or the orientation or positional relationship that the product of the invention is usually placed in use, or the orientation or positional relationship that is commonly understood by those skilled in the art, are only for the convenience of describing the present invention and simplifying the description, rather than indicating or It is implied that the device or element referred to must have a particular orientation, be constructed and operate in a particular orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first", "second", etc. are only used to differentiate the description and should not be construed to indicate or imply relative importance. In the description of the present invention, it should also be noted that, unless otherwise expressly specified and limited, terms such as "arrangement" and "connection" should be understood in a broad sense, for example, "connection" may be a fixed connection or a Detachable connection, or integral connection; it can be mechanical connection or electrical connection; it can be direct connection or indirect connection through an intermediate medium, and it can be internal communication between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

Claims (9)

1. An ion implantation apparatus, comprising:

an ion beam generating assembly for generating a ribbon-shaped ion beam;

the ion beam filtering component is matched with the ion beam generating component and used for separating the ion beams generated by the ion beam generating component to form a plurality of mutually separated ion beams;

the ion beam converging component is matched with the ion beam separating component, and the ion beam converging component converges the separated ion beams respectively;

the ion beam diffusion component is matched with the ion beam convergence component, and the ion beam adjustment component diffuses the converged ion beams to enable adjacent ion beams to be mutually overlapped;

the convergence adjusting component is matched with the ion beam convergence component, and adjusts the running state of the ion beam convergence component;

the diffusion regulating component is matched with the ion beam diffusion component, and the diffusion regulating component is used for regulating the running state of the ion beam diffusion component;

and the adjusting control assembly is matched with the convergence adjusting assembly and the diffusion adjusting assembly, and the adjusting control assembly controls the adjusting process of the convergence adjusting assembly and the diffusion adjusting assembly.

2. The ion implantation apparatus of claim 1, wherein the ion beam generation assembly comprises a single ion source or a plurality of ion sources;

when the ion beam generation assembly is composed of a plurality of ion sources, the ion sources are sequentially arranged along the width direction of the ion beam.

3. An ion implantation apparatus as defined in claim 1, wherein the ion beam splitting assembly comprises:

and the separation slits are provided with a group, correspond to the ion source respectively in position and are sequentially arranged along the width direction of the ion beam.

4. An ion implantation apparatus as defined in claim 1, wherein the ion beam focusing assembly comprises:

the spiral coils are provided with a group and correspond to the positions of the ion beam separation components, and each spiral coil extends along the movement direction of the ion beams and is sequentially arranged along the width direction of the ion beam;

the length of the spiral coil is smaller than the integral multiple of the one-time convergence length of the ion beam.

5. An ion implantation apparatus as defined in claim 1, wherein the ion beam diffusing assembly comprises:

the diffusion lenses are provided with a group and correspond to the ion beam convergence assembly in position, and each diffusion lens is positioned outside the outlet end of the spiral coil and corresponds to the convergence point of the ion beams;

wherein the diffusion lens includes:

the diffusion slit is formed by a non-magnetic component provided with a slender hole and corresponds to the position of a convergence point of the ion beam;

a diffusion yoke mounted on the diffusion slit;

and the diffusion electromagnet is arranged on the diffusion slit and corresponds to the diffusion magnetic yoke in position.

6. An ion implantation apparatus as defined in claim 4, wherein the convergence adjusting part comprises:

the adjusting motors are provided with a group, and each adjusting motor is respectively arranged on the guide bracket and matched with the spiral coil;

the motor controller is electrically connected with each adjusting motor and can control the running state of the adjusting motor;

and the convergence power supplies are provided with a group of adjustable power supplies respectively, and are respectively electrically connected with the spiral coils.

7. An ion implantation apparatus as defined in claim 5, wherein the diffusion regulating assembly comprises:

and the diffusion power supplies are provided with one group and are respectively adjustable power supplies, and each diffusion power supply is electrically connected with the diffusion electromagnet.

8. An ion implantation apparatus as defined in claim 6 or 7, wherein the adjustment control module comprises:

the Faraday cups correspond to the positions of the ion beam diffusion assemblies respectively and are sequentially arranged along the width direction of the ion beam, and the current density distribution of the ion beam is detected by the Faraday cups;

the measuring module is electrically connected with the Faraday cups through the input and output module, and calculates the current density data detected by each Faraday cup to obtain total current density distribution data;

the central processing module is electrically connected with the measuring module and the storage module and compares current density distribution data preset in the storage module with current density distribution data obtained by the measuring module, and the central processing module is also electrically connected with the motor controller, the convergent power supply and the diffuse power supply through the input and output module and controls the running states of the motor controller, the convergent power supply and the diffuse power supply.

9. An ion implantation adjusting method performed by the ion implantation apparatus according to claim 8, comprising:

the current density distribution obtained by the measuring module suddenly increases in a certain area, the total value of the whole current density is increased, but the whole current density distribution profile of the area is kept consistent with that of other areas, at the moment, the central processing module sends out an adjusting signal to the diffusion power supply at the corresponding position of the suddenly increased area, the voltage of the diffusion power supply is reduced, the current density distribution of the ion beam is reduced, the Faraday cups detect the current density distribution of the ion beam again, the measuring module calculates the current density data detected by each Faraday cup to obtain the total current density distribution data, the central processing module adjusts the diffusion power supply again according to the current density distribution data, and the operation is repeated for many times, so that the measured current density distribution is kept consistent with the current density distribution data preset in the storage module;

the current density distribution obtained by the measuring module drops suddenly in a certain area, at the moment, the central processing module sends an adjusting signal to a convergent power supply at a corresponding position of the drop-sudden area, the voltage of a spiral coil at the position is changed, so that the convergence point of the ion beam at the outlet end of the spiral coil moves towards the direction of the diffusion lens, the current density of the drop-sudden area is increased, the Faraday cups detect the current density distribution of the ion beam again, the measuring module calculates the current density data detected by each Faraday cup to obtain total current density distribution data, the central processing module adjusts the convergent power supply according to the current density distribution data again, and the operation is repeated for many times, so that the measured current density distribution is consistent with the current density distribution data preset in the storage module;

the current density distribution obtained by the measuring module is suddenly increased in a certain area and suddenly reduced in an adjacent area, at the moment, the central processing module sends an adjusting signal to the motor controller to enable the adjusting motor at the corresponding position to operate to drive the corresponding spiral coil to move, so that the current densities of the suddenly increased area and the suddenly reduced area are changed, the Faraday cups detect the current density distribution of the ion beams again, the measuring module calculates the current density data detected by each Faraday cup to obtain total current density distribution data, the central processing module controls the adjusting motor through the motor controller again according to the current density distribution data to enable the spiral coil to move, and the operation is repeated for many times, so that the measured current density distribution is consistent with the current density distribution data preset in the storage module.

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