CN114710135B - Double-sided filter, preparation method, radio frequency module and electronic equipment - Google Patents
Double-sided filter, preparation method, radio frequency module and electronic equipment Download PDFInfo
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- CN114710135B CN114710135B CN202210311965.7A CN202210311965A CN114710135B CN 114710135 B CN114710135 B CN 114710135B CN 202210311965 A CN202210311965 A CN 202210311965A CN 114710135 B CN114710135 B CN 114710135B
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- 238000002360 preparation method Methods 0.000 title abstract description 7
- 238000010897 surface acoustic wave method Methods 0.000 claims abstract description 252
- 239000000758 substrate Substances 0.000 claims description 60
- 239000000853 adhesive Substances 0.000 claims description 11
- 230000001070 adhesive effect Effects 0.000 claims description 11
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 description 13
- 230000010354 integration Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010862 gear shaping Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/644—Coupled resonator filters having two acoustic tracks
- H03H9/6456—Coupled resonator filters having two acoustic tracks being electrically coupled
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a double-sided filter, a preparation method, a radio frequency module and electronic equipment. The double-sided filter includes: a first surface acoustic wave filter and a second surface acoustic wave filter; the front surface of the first surface acoustic wave filter is provided with a first surface acoustic wave chip; the second surface acoustic wave filter is positioned above the first surface acoustic wave filter through the bonding supporting structure, the second surface acoustic wave chip is arranged on the front surface of the second surface acoustic wave filter, and the front surface of the first surface acoustic wave filter is opposite to the front surface of the second surface acoustic wave filter; the first surface acoustic wave filter, the second surface acoustic wave filter and the bonding support structure enclose a common cavity structure, and the first surface acoustic wave chip and the second surface acoustic wave chip are both positioned in the common cavity structure. The technical scheme provided by the embodiment of the invention realizes the double-sided filter with small transverse size.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a double-sided filter, a preparation method, a radio frequency module and electronic equipment.
Background
In recent years, along with the progress of research and technology, the surface acoustic wave filter has been developed in a long way in terms of miniaturization, high operating frequency, large bandwidth, integration, high withstand power, and the like.
At present, a plurality of surface acoustic wave filters are generally tiled on the surface of a substrate to realize the filtering function, and the filter with the structure has the defect that the transverse size of the device is too large.
Disclosure of Invention
The invention provides a double-sided filter, a preparation method, a radio frequency module and electronic equipment, which are used for reducing the transverse size of a filter formed by a plurality of surface acoustic wave filters.
According to an aspect of the present invention, there is provided a duplex filter including: a first surface acoustic wave filter and a second surface acoustic wave filter;
The front surface of the first surface acoustic wave filter is provided with a first surface acoustic wave chip;
The second surface acoustic wave filter is positioned above the first surface acoustic wave filter through a bonding supporting structure, a second surface acoustic wave chip is arranged on the front surface of the second surface acoustic wave filter, and the front surface of the first surface acoustic wave filter is opposite to the front surface of the second surface acoustic wave filter;
The first surface acoustic wave filter, the second surface acoustic wave filter and the bonding support structure enclose a common cavity structure, and the first surface acoustic wave chip and the second surface acoustic wave chip are both positioned in the common cavity structure.
Optionally, the first surface acoustic wave filter further includes a first substrate and a first functional circuit, where the first functional circuit and the first surface acoustic wave chip are located on a first surface of the first substrate, and the first functional circuit is electrically connected with the first surface acoustic wave chip;
the second surface acoustic wave filter further comprises a second substrate and a second functional circuit, the second functional circuit and the second surface acoustic wave chip are located on the first surface of the second substrate, and the second functional circuit is electrically connected with the second surface acoustic wave chip.
Optionally, the first substrate is provided with a first via hole, the first surface acoustic wave filter further includes a first conductive connection structure, the first conductive connection structure is located in the first via hole, and the first conductive connection structure is electrically connected with the first functional circuit;
the second substrate is provided with a second via hole; the second surface acoustic wave filter further comprises a second conductive connection structure, the second conductive connection structure is located in the second via hole, and the second conductive connection structure is electrically connected with the second functional circuit.
Optionally, the bonding support structure is located between the first functional line and the first surface acoustic wave chip;
The bonding support structure is located between the second functional circuit and the second surface acoustic wave chip.
Optionally, the adhesive support structure comprises an organic adhesive layer or a bonding layer.
Optionally, the device further comprises a third conductive connection structure and a fourth conductive connection structure;
The third conductive connection structure is positioned on the second surface of the first substrate, the third conductive connection structure is electrically connected with the first conductive connection structure, and the second surface of the first substrate and the first surface of the first substrate are oppositely arranged;
the fourth conductive connection structure is located on the second surface of the second substrate, the fourth conductive connection structure is electrically connected with the second conductive connection structure, and the second surface of the second substrate and the first surface of the second substrate are oppositely arranged.
Optionally, the third conductive connection structure includes a pad or a solder ball;
And/or, the fourth conductive connection structure comprises a bonding pad or a solder ball; the fourth conductive connection structure and the third conductive connection structure are the same or different.
According to another aspect of the present invention, there is provided a method for manufacturing a duplex filter, including:
Providing a first surface acoustic wave filter and a second surface acoustic wave filter, wherein the front surface of the first surface acoustic wave filter is provided with a first surface acoustic wave chip, and the front surface of the second surface acoustic wave filter is provided with a second surface acoustic wave chip;
Forming a bonding support structure on the front surface of the first surface acoustic wave filter or the front surface of the second surface acoustic wave filter;
The second surface acoustic wave filter is arranged on the first surface acoustic wave filter through the bonding supporting structure, and the front face of the first surface acoustic wave filter is opposite to the front face of the second surface acoustic wave filter, wherein the first surface acoustic wave filter, the second surface acoustic wave filter and the bonding supporting structure enclose a shared cavity structure, and the first surface acoustic wave chip and the second surface acoustic wave chip are both located in the shared cavity structure.
According to another aspect of the present invention, there is provided a radio frequency module, comprising: the radio frequency module comprises the double-sided filter according to any embodiment of the invention.
According to another aspect of the present invention, there is provided an electronic apparatus including: the radio frequency module of any embodiment of the present invention.
The filter provided in this embodiment is a double-sided filter, and the second surface acoustic wave filter is located above the first surface acoustic wave filter through the bonding support structure, so that the lateral dimension of the filter is reduced compared with the filter structure in which the first surface acoustic wave filter and the second surface acoustic wave filter are located on the same substrate surface. And the first surface acoustic wave filter, the second surface acoustic wave filter and the bonding supporting structure enclose a shared cavity structure, and the first surface acoustic wave chip and the second surface acoustic wave chip are both positioned in the shared cavity structure, namely, the shared cavity structure is used for reflecting the surface acoustic wave back to the first surface acoustic wave chip and simultaneously reflecting the surface acoustic wave back to the second surface acoustic wave chip, so that the quality factors of the first surface acoustic wave chip and the second surface acoustic wave chip are improved, and the energy loss is reduced.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a duplex filter according to an embodiment of the present invention;
FIG. 2 is a flow chart of a method for fabricating a dual-sided filter according to an embodiment of the present invention;
fig. 3 to fig. 6 are corresponding schematic structural diagrams of steps of a method for manufacturing a double-sided filter according to an embodiment of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The embodiment of the invention provides a double-sided filter. Fig. 1 is a schematic structural diagram of a dual-sided filter according to an embodiment of the present invention. Referring to fig. 1, the double-sided filter includes: a first surface acoustic wave filter 100 and a second surface acoustic wave filter 200; the front surface 100a of the first surface acoustic wave filter 100 is provided with a first surface acoustic wave chip 101; the second surface acoustic wave filter 200 is located above the first surface acoustic wave filter 100 by the adhesive support structure 300, the front surface 200a of the second surface acoustic wave filter 200 is provided with a second surface acoustic wave chip 201, and the front surface 100a of the first surface acoustic wave filter 100 is disposed opposite to the front surface 200a of the second surface acoustic wave filter 200; the first surface acoustic wave filter 100, the second surface acoustic wave filter 200, and the adhesive support structure 300 enclose a common cavity structure 400, and the first surface acoustic wave chip 101 and the second surface acoustic wave chip 201 are both located within the common cavity structure 400.
In the present embodiment, the surface acoustic wave chip of the front surface 100a of the first surface acoustic wave filter 100 is referred to as a first surface acoustic wave chip 101, and the surface acoustic wave chip of the front surface 200a of the second surface acoustic wave filter 200 is referred to as a second surface acoustic wave chip 201. The surface acoustic wave chip includes a piezoelectric material substrate and an interdigital transducer (IDT) located on a surface of the piezoelectric material substrate. The working principle of the surface acoustic wave chip is as follows: one end of the interdigital transducer on the surface of the piezoelectric material substrate converts an input electric signal into an acoustic signal through an inverse piezoelectric effect, the acoustic signal propagates along the surface of the piezoelectric material substrate, and the other end of the interdigital transducer converts the acoustic signal into an electric signal for output. The whole surface acoustic wave chip has the following functions: the filtering function is realized by filtering out the acoustic signals in a specific frequency range in the process of propagating the acoustic signals on the surface of the piezoelectric material substrate, and the interdigital transducer is utilized to complete the conversion of the acoustic signals and the electrical signals.
The surface acoustic wave chip is similar to a sensor, and when various different frequency bands enter the interdigital transducer, the interdigital transducer can vibrate similar to the sensor, so that the effect of filtering out unnecessary wave bands is achieved. The part of the interdigital transducer needs to vibrate during operation, so that other materials cannot be covered on the surface of the interdigital transducer to influence the vibration frequency of the interdigital transducer. The saw chip needs to be located within the cavity structure. The cavity structure is used for reflecting the surface acoustic wave to the surface acoustic wave chip, so that the quality factor of the surface acoustic wave chip is improved, and the energy loss is reduced. The interdigital transducer is specifically a gear shaping line.
The filter provided in this embodiment is a double-sided filter, the second surface acoustic wave filter 200 is located on the first surface acoustic wave filter 100 through the bonding support structure 300, and compared with a filter structure in which the first surface acoustic wave filter 100 and the second surface acoustic wave filter 200 are located on the same substrate surface, the lateral dimension of the filter is reduced, and the longitudinal integration level of the filter is improved. And the first surface acoustic wave filter 100, the second surface acoustic wave filter 200 and the bonding support structure 300 enclose a common cavity structure 400, and the first surface acoustic wave chip 101 and the second surface acoustic wave chip 201 are both located in the common cavity structure 400, that is, the common cavity structure 400 is used for reflecting the surface acoustic wave back to the first surface acoustic wave chip 101 and simultaneously reflecting the surface acoustic wave back to the second surface acoustic wave chip 201, so that the quality factors of the first surface acoustic wave chip 101 and the second surface acoustic wave chip 201 are improved, the energy loss is reduced, the number of cavity structures is reduced, and the cost of the filter is reduced.
The number of double-sided filters of the first surface acoustic wave filter 100, the adhesive support structure 300, and the second surface acoustic wave filter 200 may be set according to actual requirements. In other embodiments, the number of the first surface acoustic wave chips 101 on the front surface of the first surface acoustic wave filter 100 and the number of the second surface acoustic wave chips 201 on the front surface of the second surface acoustic wave filter 200 are not limited.
Optionally, referring to fig. 1, the first surface acoustic wave filter 100 further includes a first substrate 102 and a first functional line 103, the first functional line 103 and the first surface acoustic wave chip 101 are located on a first surface of the first substrate 102, and the first functional line 103 is electrically connected to the first surface acoustic wave chip 101. The second surface acoustic wave filter 200 further includes a second substrate 202 and a second functional wiring 203, the second functional wiring 203 and the second surface acoustic wave chip 201 are located on the first surface of the second substrate 202, and the second functional wiring 203 is electrically connected to the second surface acoustic wave chip 201.
By way of example, the first substrate 102 and the second substrate 202 may be wafers. The first functional wiring 103 and the second functional wiring 203 may be, for example, wiring made of metallic copper.
Specifically, the first functional line 103 is used to draw out an electrical signal of the first surface acoustic wave chip 101. The second functional line 203 is used for extracting an electrical signal of the second surface acoustic wave chip 201.
Optionally, referring to fig. 1, the first substrate 102 is provided with a first via 104, the first via 104 exposes the first functional line 103, the first saw filter 100 further includes a first conductive connection structure 105, the first conductive connection structure 105 is located in the first via 104, and the first conductive connection structure 105 is electrically connected to the first functional line 103; the second substrate 202 is provided with a second via hole 204, and the second via hole 204 exposes the second functional circuit 203; the second saw filter 200 further includes a second conductive connection structure 205, the second conductive connection structure 205 is located in the second via 204, and the second conductive connection structure 205 is electrically connected to the second functional circuit 203.
The shapes of the first via 104 and the second via 204 may include any one of a trapezoid via, a rectangular via, or a cylindrical via.
Specifically, the first conductive connection structure 105 is electrically connected to the first functional circuit 103, so that the first conductive connection structure 105 directs the electrical signal of the first surface acoustic wave chip 101 to the back surface of the first surface acoustic wave filter 100, so as to facilitate electrical connection with other devices.
The second conductive connection structure 205 is electrically connected to the second functional circuit 203, so that the second conductive connection structure 205 directs the electrical signal of the second surface acoustic wave chip 201 to the back surface of the second surface acoustic wave filter 200, so as to facilitate electrical connection with other devices.
Optionally, referring to fig. 1, the bonding support structure 300 is located between the first surface acoustic wave chip 101 and the first functional circuit 103, and the bonding support structure 300 is located between the second surface acoustic wave chip 201 and the second functional circuit 203, so that the first functional circuit 103 and the second functional circuit 203 are located outside the common cavity structure 400, and the first surface acoustic wave chip 101 and the second surface acoustic wave chip 201 are both located in the common cavity structure 400, that is, the common cavity structure 400 is used for reflecting the surface acoustic wave back to the first surface acoustic wave chip 101, and meanwhile, the surface acoustic wave can be reflected back to the second surface acoustic wave chip 201, so that on one hand, the quality factors of the first surface acoustic wave chip 101 and the second surface acoustic wave chip 201 are improved, energy loss is reduced, and on the other hand, the number of the cavity structures is reduced, and the cost of the filter is reduced.
Optionally, referring to fig. 1, the adhesive support structure 300 includes an organic adhesive layer or bonding layer.
The organic adhesive layer or the bonding layer can achieve the effect of positioning the second saw filter 200 over the first saw filter 100 through the adhesive support structure 300. The organic adhesive layer may be, for example, double-sided adhesive tape.
Optionally, referring to fig. 1, a third conductive connection structure 106 and a fourth conductive connection structure 206 are further included; the third conductive connection structure 106 is located on the second surface of the first substrate 102, the third conductive connection structure 106 is electrically connected with the first conductive connection structure 105, and the second surface of the first substrate 102 and the first surface of the first substrate 102 are opposite to each other; the fourth conductive connection structure 206 is located on the second surface of the second substrate 202, and the fourth conductive connection structure 206 is electrically connected to the second conductive connection structure 205, where the second surface of the second substrate 202 is opposite to the first surface of the second substrate 202.
Specifically, the third conductive connection structure 106 is used to realize electrical connection between the first saw filter 100 and other devices. If the third conductive connection structure 106 is electrically connected to other devices through a wire bonding method. The third conductive connection structure 106 may be a pad and electrically connected to other devices by wire bonding. The third conductive connection structure 106 may also be a solder ball.
The fourth conductive connection structure 206 is used to realize electrical connection between the second saw filter 200 and other devices. The fourth conductive connection structure 206 may be a pad and electrically connected to other devices by wire bonding. The fourth conductive connection structure 206 may also be a solder ball.
Optionally, the fourth conductive connection structure 206 and the third conductive connection structure 106 are the same or different.
The embodiment of the invention also provides a preparation method of the double-sided filter. Fig. 2 is a flowchart of a method for manufacturing a double-sided filter according to an embodiment of the present invention. Fig. 3 to fig. 6 are corresponding schematic structural diagrams of steps of a method for manufacturing a double-sided filter according to an embodiment of the present invention. Referring to fig. 2, the method for manufacturing the double-sided filter includes the steps of:
S110, a first surface acoustic wave filter and a second surface acoustic wave filter are provided, wherein the front surface of the first surface acoustic wave filter is provided with a first surface acoustic wave chip, and the front surface of the second surface acoustic wave filter is provided with a second surface acoustic wave chip.
Referring to fig. 3, a first surface acoustic wave filter 100 is provided. The front surface 100a of the first surface acoustic wave filter 100 is provided with a first surface acoustic wave chip 101. Referring to fig. 4, a second surface acoustic wave filter 200 is provided. The front surface 200a of the second surface acoustic wave filter 200 is provided with a second surface acoustic wave chip 201.
And S120, forming an adhesive support structure on the front surface of the first surface acoustic wave filter or the front surface of the second surface acoustic wave filter.
Illustratively, referring to fig. 5, the front face 100a of the first surface acoustic wave filter 100 forms an adhesive support structure 300. Referring to fig. 6, only the adhesive support structure 300 between the first surface acoustic wave chip 101 and the first functional wiring 103 remains through the patterning process.
S130, the second surface acoustic wave filter is arranged on the first surface acoustic wave filter through the bonding supporting structure, the front face of the first surface acoustic wave filter is opposite to the front face of the second surface acoustic wave filter, the first surface acoustic wave filter, the second surface acoustic wave filter and the bonding supporting structure enclose a shared cavity structure, and the first surface acoustic wave chip and the second surface acoustic wave chip are both located in the shared cavity structure.
Referring to fig. 1, the second surface acoustic wave filter 200 is located above the first surface acoustic wave filter 100 through the bonding support structure 300, and the bonding support structure 300 performs a supporting function, and simultaneously bonds and fixes the second surface acoustic wave filter 200 and the first surface acoustic wave filter 100, so as to form a common cavity structure 400 surrounded by the first surface acoustic wave filter 100, the second surface acoustic wave filter 200 and the bonding support structure 300.
The preparation method provided by the embodiment prepares a double-sided filter, the second surface acoustic wave filter 200 is located on the first surface acoustic wave filter 100 through the bonding support structure 300, and compared with a filter structure that the first surface acoustic wave filter 100 and the second surface acoustic wave filter 200 are located on the surface of the same substrate, the transverse size of the filter is reduced, and the longitudinal integration level of the filter is improved. And the first surface acoustic wave filter 100, the second surface acoustic wave filter 200 and the bonding support structure 300 enclose a common cavity structure 400, and the first surface acoustic wave chip 101 and the second surface acoustic wave chip 201 are both located in the common cavity structure 400, that is, the common cavity structure 400 is used for reflecting the surface acoustic wave back to the first surface acoustic wave chip 101 and simultaneously reflecting the surface acoustic wave back to the second surface acoustic wave chip 201, so that the quality factors of the first surface acoustic wave chip 101 and the second surface acoustic wave chip 201 are improved, the energy loss is reduced, the number of cavity structures is reduced, and the cost of the filter is reduced.
The embodiment of the invention also provides a radio frequency module. The radio frequency module comprises the double-sided filter in any of the above embodiments. The duplex filter in any of the above embodiments may form a duplex filter or a multiplex filter required by the rf module.
The radio frequency module of the embodiment comprises the double-sided filter, so that the transverse size of the radio frequency module is reduced, the longitudinal integration level of the radio frequency module is improved, and the cost of the radio frequency module is reduced. Specifically, the second surface acoustic wave filter 200 in the double-sided filter is located above the first surface acoustic wave filter 100 through the bonding support structure 300, and compared with a filter structure in which the first surface acoustic wave filter 100 and the second surface acoustic wave filter 200 are located on the same substrate surface, the transverse size of the filter is reduced, and the longitudinal integration level of the filter and the radio frequency module is improved. And the first surface acoustic wave filter 100, the second surface acoustic wave filter 200 and the bonding support structure 300 enclose a common cavity structure 400, and the first surface acoustic wave chip 101 and the second surface acoustic wave chip 201 are both located in the common cavity structure 400, that is, the common cavity structure 400 is used for reflecting the surface acoustic wave back to the first surface acoustic wave chip 101 and simultaneously reflecting the surface acoustic wave back to the second surface acoustic wave chip 201, so that on one hand, the quality factors of the first surface acoustic wave chip 101 and the second surface acoustic wave chip 201 are improved, the energy loss is reduced, and on the other hand, the number of cavity structures is reduced, and the cost of the filter and the radio frequency module is reduced.
The embodiment of the invention also provides electronic equipment, which comprises the radio frequency module set in any of the above embodiments.
The electronic equipment can be a mobile phone, a computer, an unmanned aerial vehicle and the like. Because the electronic equipment comprises the radio frequency module in any of the embodiments, the radio frequency module has smaller transverse dimension and high longitudinal integration level, on one hand, space can be provided for other devices in the electronic equipment, such as a power supply module, and on the other hand, the cost of the electronic equipment is reduced.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present invention may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present invention are achieved, and the present invention is not limited herein.
The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (6)
1. A double-sided filter, comprising: a first surface acoustic wave filter and a second surface acoustic wave filter;
The front surface of the first surface acoustic wave filter is provided with a first surface acoustic wave chip;
The second surface acoustic wave filter is positioned above the first surface acoustic wave filter through a bonding supporting structure, a second surface acoustic wave chip is arranged on the front surface of the second surface acoustic wave filter, and the front surface of the first surface acoustic wave filter is opposite to the front surface of the second surface acoustic wave filter;
the first surface acoustic wave filter, the second surface acoustic wave filter and the bonding support structure enclose a shared cavity structure, and the first surface acoustic wave chip and the second surface acoustic wave chip are both positioned in the shared cavity structure;
The first surface acoustic wave filter further comprises a first substrate and a first functional circuit, wherein the first functional circuit and the first surface acoustic wave chip are positioned on the first surface of the first substrate, and the first functional circuit is electrically connected with the first surface acoustic wave chip;
the second surface acoustic wave filter further comprises a second substrate and a second functional circuit, wherein the second functional circuit and the second surface acoustic wave chip are positioned on the first surface of the second substrate, and the second functional circuit is electrically connected with the second surface acoustic wave chip;
The bonding support structure is positioned between the first surface acoustic wave chip and the first functional circuit, and the bonding support structure is positioned between the second surface acoustic wave chip and the second functional circuit;
the double-sided filter further comprises a third conductive connection structure and a fourth conductive connection structure;
The third conductive connection structure is positioned on the second surface of the first substrate, and the second surface of the first substrate and the first surface of the first substrate are oppositely arranged;
the fourth conductive connection structure is positioned on the second surface of the second substrate, and the second surface of the second substrate and the first surface of the second substrate are oppositely arranged;
The adhesive support structure comprises an organic adhesive layer or a bonding layer;
The first substrate is provided with a first via hole, the first surface acoustic wave filter further comprises a first conductive connection structure, the first conductive connection structure is located in the first via hole, and the first conductive connection structure is electrically connected with the first functional circuit;
the second substrate is provided with a second via hole; the second surface acoustic wave filter further comprises a second conductive connection structure, wherein the second conductive connection structure is positioned in the second via hole and is electrically connected with the second functional circuit;
The first functional circuit is used for leading out an electric signal of the first surface acoustic wave chip; the second functional circuit is used for leading out the electric signal of the second surface acoustic wave chip.
2. The duplex filter of claim 1, wherein the duplex filter is configured to provide the duplex filter,
The third conductive connection structure is electrically connected with the first conductive connection structure;
The fourth conductive connection structure is electrically connected with the second conductive connection structure.
3. The dual-sided filter of claim 2, wherein the third conductive connection structure comprises a pad or a solder ball;
And/or, the fourth conductive connection structure comprises a bonding pad or a solder ball; the fourth conductive connection structure and the third conductive connection structure are the same or different.
4. A method of manufacturing a double-sided filter, comprising:
Providing a first surface acoustic wave filter and a second surface acoustic wave filter, wherein the front surface of the first surface acoustic wave filter is provided with a first surface acoustic wave chip, and the front surface of the second surface acoustic wave filter is provided with a second surface acoustic wave chip;
Forming a bonding support structure on the front surface of the first surface acoustic wave filter or the front surface of the second surface acoustic wave filter;
The second surface acoustic wave filter is arranged above the first surface acoustic wave filter through the bonding support structure, the front face of the first surface acoustic wave filter is opposite to the front face of the second surface acoustic wave filter, the first surface acoustic wave filter, the second surface acoustic wave filter and the bonding support structure enclose a shared cavity structure, and the first surface acoustic wave chip and the second surface acoustic wave chip are both positioned in the shared cavity structure;
The first surface acoustic wave filter further comprises a first substrate and a first functional circuit, wherein the first functional circuit and the first surface acoustic wave chip are positioned on the first surface of the first substrate, and the first functional circuit is electrically connected with the first surface acoustic wave chip;
the second surface acoustic wave filter further comprises a second substrate and a second functional circuit, wherein the second functional circuit and the second surface acoustic wave chip are positioned on the first surface of the second substrate, and the second functional circuit is electrically connected with the second surface acoustic wave chip;
The bonding support structure is positioned between the first surface acoustic wave chip and the first functional circuit, and the bonding support structure is positioned between the second surface acoustic wave chip and the second functional circuit;
disposing a third conductive connection structure on a second surface of the first substrate, the second surface of the first substrate being disposed opposite to the first surface of the first substrate;
Disposing a fourth conductive connection structure on a second surface of the second substrate, the second surface of the second substrate being disposed opposite to the first surface of the second substrate;
The adhesive support structure comprises an organic adhesive layer or a bonding layer;
The first substrate is provided with a first via hole, the first surface acoustic wave filter further comprises a first conductive connection structure, the first conductive connection structure is located in the first via hole, and the first conductive connection structure is electrically connected with the first functional circuit;
the second substrate is provided with a second via hole; the second surface acoustic wave filter further comprises a second conductive connection structure, wherein the second conductive connection structure is positioned in the second via hole and is electrically connected with the second functional circuit;
The first functional circuit is used for leading out an electric signal of the first surface acoustic wave chip; the second functional circuit is used for leading out the electric signal of the second surface acoustic wave chip.
5. A radio frequency module, comprising: the radio frequency module comprises the duplex filter of any of claims 1-3.
6. An electronic device, comprising: the radio frequency module of claim 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210311965.7A CN114710135B (en) | 2022-03-28 | 2022-03-28 | Double-sided filter, preparation method, radio frequency module and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210311965.7A CN114710135B (en) | 2022-03-28 | 2022-03-28 | Double-sided filter, preparation method, radio frequency module and electronic equipment |
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