CN114710007A - Intelligent power module - Google Patents

Intelligent power module Download PDF

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Publication number
CN114710007A
CN114710007A CN202210504788.4A CN202210504788A CN114710007A CN 114710007 A CN114710007 A CN 114710007A CN 202210504788 A CN202210504788 A CN 202210504788A CN 114710007 A CN114710007 A CN 114710007A
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CN
China
Prior art keywords
side output
control circuit
electrically connected
low
channel
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Pending
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CN202210504788.4A
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Chinese (zh)
Inventor
冯宇翔
左安超
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Guangdong Huixin Semiconductor Co Ltd
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Guangdong Huixin Semiconductor Co Ltd
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Application filed by Guangdong Huixin Semiconductor Co Ltd filed Critical Guangdong Huixin Semiconductor Co Ltd
Priority to CN202210504788.4A priority Critical patent/CN114710007A/en
Publication of CN114710007A publication Critical patent/CN114710007A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/14—Arrangements for reducing ripples from dc input or output
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters

Abstract

The invention discloses an intelligent power module, which comprises a three-channel high-side driving circuit, a three-channel low-side driving circuit, a current sampling circuit, a high-side output control circuit and a low-side output control circuit, wherein the three-channel high-side driving circuit is connected with the three-channel low-side driving circuit; the high-side output control circuit is electrically connected with the three-channel high-side driving circuit and is provided with a first three-channel high-side output end and a second three-channel high-side output end; the low-side output control circuit is electrically connected with the three-channel low-side output driving circuit and is provided with a first three-channel low-side output end and a second three-channel low-side output end; the current sampling circuit is respectively electrically connected with the high-side output control circuit and the low-side output control circuit. The invention can avoid the situation that the intelligent power module uses the insulated gate bipolar transistor as a switch device to increase the power consumption ratio of the intelligent power module under the condition of low current, thereby achieving the purpose of saving energy.

Description

Intelligent power module
Technical Field
The invention relates to the technical field of power modules, in particular to an intelligent power module.
Background
The intelligent power module is a power driving module combining electronic and integrated circuit technologies, and mainly integrates a power switch device and a high-voltage driving circuit together so as to be applied to variable frequency motor servo driving or household appliance variable frequency control.
The traditional intelligent power module is mainly controlled by taking an insulated gate bipolar transistor as an inverter device (a switching device), when the intelligent power module is applied, working current can change according to the change of an application scene, and when the intelligent power module works under the condition of low current, if the insulated gate bipolar transistor with high power is still used as the inverter device, the power consumption of the intelligent power module can be increased, and energy waste is caused.
Disclosure of Invention
The invention aims to provide a novel intelligent power module, which aims to solve the problem that the existing intelligent power module adopts an insulated gate bipolar transistor as an inverter, and the power consumption of the intelligent power module is increased under the condition of low current, so that energy is wasted.
In order to solve the above problems, the present invention provides an intelligent power module, including: the three-channel high-side driving circuit, the three-channel low-side driving circuit, the current sampling circuit, the high-side output control circuit and the low-side output control circuit are connected in series; the high-side output control circuit is electrically connected with the three-channel high-side driving circuit and is provided with a first three-channel high-side output end and a second three-channel high-side output end; the low-side output control circuit is electrically connected with the three-channel low-side output driving circuit, and the low-side output control circuit is provided with a first three-channel low-side output end and a second three-channel low-side output end; the current sampling circuit is respectively and electrically connected with the high-side output control circuit and the low-side output control circuit and is used for detecting the current value of an input power supply and respectively outputting corresponding level signals to the high-side output control circuit and the low-side output control circuit according to the current value;
each of the first three-channel high-side output end and the first three-channel low-side output end is electrically connected with a field effect transistor serving as a switching device, and each of the second three-channel high-side output end and the second three-channel low-side output end is electrically connected with an insulated gate bipolar transistor serving as a switching device; the high-side output control circuit controls the output levels of the first three-channel high-side output end and the second three-channel high-side output end respectively according to the level signals, and the low-side output control circuit controls the output levels of the first three-channel low-side output end and the second three-channel low-side output end respectively according to the level signals.
Preferably, the high-side output control circuit comprises a semiconductor field effect transistor, a first not gate unit, a first nor gate unit and a first and gate unit; the semiconductor field effect transistor is electrically connected with the sampling circuit, the first NOR gate unit is electrically connected with the three-channel high-side driving circuit and the first NOR gate respectively, the first NOR gate unit is electrically connected with the semiconductor field effect transistor, and the first AND gate unit is electrically connected with the first NOR gate unit, the semiconductor field effect transistor and the three-channel high-side driving circuit respectively.
Preferably, the low-side output control circuit includes a second not gate unit, a second nor gate unit, and a second and gate unit; the second nor gate unit is electrically connected with the three-channel low-side driving circuit and the second nor gate respectively, the second nor gate unit is electrically connected with the current sampling circuit, and the second and gate unit is electrically connected with the second nor gate unit, the three-channel low-side driving circuit and the current sampling circuit respectively.
Preferably, the current sampling circuit comprises a first resistor, a second resistor and a comparator; the first resistor and the second resistor are arranged in series, the other end of the first resistor is electrically connected with an input power supply, the other end of the second resistor is grounded, a negative electrode pin of the comparator is electrically connected between the first resistor and the second resistor, and an output pin of the comparator is electrically connected with the high-side output control circuit and the low-side output control circuit respectively.
Preferably, the three-channel high-side driving circuit includes a bootstrap circuit, the bootstrap circuit includes a bootstrap resistor, a first bootstrap diode, a second bootstrap diode, and a third bootstrap diode, a first end of the bootstrap resistor is electrically connected to the input power supply, and anodes of the first bootstrap diode, the second bootstrap diode, and the third bootstrap diode are electrically connected to the bootstrap resistor.
Preferably, the power supply further comprises a fault logic control circuit, a first end of which is electrically connected to the input power supply, and a second end of the fault logic control circuit is electrically connected to the three-channel high-side driver circuit and the three-channel low-side output driver circuit, respectively, and is configured to receive fault signals of the high-side output control circuit and the low-side output control circuit and control corresponding circuits according to the fault signals.
Preferably, an undervoltage detection circuit and a first filter are connected in series between the fault logic control circuit and the input power supply, the other end of the undervoltage detection circuit is electrically connected with the first end of the fault logic control circuit, and the other end of the first filter is electrically connected with the input power supply.
Preferably, a level shift circuit and a second filter are further connected in series to a third end of the fault logic control circuit, and the other end of the level shift circuit is electrically connected to the third end of the fault logic control circuit.
Compared with the prior art, the invention can detect the current value of the input power supply through the current sampling circuit by additionally arranging the current sampling circuit, the high-side output control circuit and the low-side output control circuit, then corresponding level signals are output to the high-side output control circuit and the low-side output control circuit, so that the output levels of the first three-channel high-side output end, the first three-channel low-side output end, the second three-channel high-side output end and the second three-channel low-side output end are controlled through the level signals, the field effect tube is used as a switching device under the condition of low current, under the condition of large current, the insulated gate bipolar transistor is used as a switch device, so that the condition that the power consumption of the insulated gate bipolar transistor is increased when the insulated gate bipolar transistor works as the switch device under the condition of small current is avoided, and the purpose of saving energy is achieved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is an electrical schematic diagram of an intelligent power module according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a connection between an intelligent power module and a switching device according to an embodiment of the present invention;
fig. 3 is an electrical schematic diagram of a high-side output control circuit in an intelligent power module according to an embodiment of the present invention;
fig. 4 is an electrical schematic diagram of a low-side output control circuit in an intelligent power module according to an embodiment of the present invention;
fig. 5 is an electrical schematic diagram of a current sampling circuit in an intelligent power module according to an embodiment of the present invention;
fig. 6 is an electrical schematic diagram of a conventional intelligent control module.
100, an intelligent power module; 101. a three-channel high-side drive circuit; 102. a three-channel low-side driver circuit; 103. a current sampling circuit; 104. a high-side output control circuit; 105. a low side output control circuit; 106. a fault logic control circuit; 107. an undervoltage detection circuit; 108. a first filter; 109 a level conversion circuit; 110. a second filter;
301. a semiconductor field effect transistor; 302. 303 and 304 are first not gates; 305. 307 and 309 are first nor gates; 306. 308 and 310 are first AND gates;
401. 402 and 403 are second not gates; 404. 406 and 408 are second nor gate units; 405. 407 and 409 are second and gate units;
501. a first resistor; 502. a second resistor; 503. a comparator;
602. a first bootstrap diode; 603. a second bootstrap diode; 604. a third bootstrap diode; 605. a bootstrap resistance; 606. 609, 612, 615, 618 and 621 are field effect transistors; 607. 610, 613, 616, 619, and 622 are insulated gate bipolar transistors; 608. 611, 614, 617, 620 and 623 are fast recovery diodes.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides an intelligent power module 100, which is shown in fig. 1 to 5 and includes a three-channel high-side driver circuit 101, a three-channel low-side driver circuit 102, a current sampling circuit 103, a high-side output control circuit 104, and a low-side output control circuit 105; the high-side output control circuit 104 is electrically connected with the three-channel high-side drive circuit 101, and the high-side output control circuit 104 is provided with a first three-channel high-side output end and a second three-channel high-side output end; the low-side output control circuit 105 is electrically connected with the three-channel low-side output driving circuit, and the low-side output control circuit 105 is provided with a first three-channel low-side output end and a second three-channel low-side output end; the current sampling circuit 103 is electrically connected to the high-side output control circuit 104 and the low-side output control circuit 105, respectively, and detects a current value of the input power supply and outputs a corresponding level signal to the high-side output control circuit 104 and the low-side output control circuit 105, respectively, according to the current value.
Specifically, each of the first three-channel high-side output end and the first three-channel low-side output end is electrically connected with a field effect transistor serving as a switching device, and each of the second three-channel high-side output end and the second three-channel low-side output end is electrically connected with an insulated gate bipolar transistor serving as a switching device; the high-side output control circuit 104 controls the output levels of the first three-channel high-side output end and the second three-channel high-side output end respectively according to the level signals, and the low-side output control circuit 105 controls the output levels of the first three-channel low-side output end and the second three-channel low-side output end respectively according to the level signals.
In this embodiment, the three-channel high-side driving circuit 101 includes a bootstrap circuit, the bootstrap circuit includes a bootstrap resistor 605, a first bootstrap diode 602, a second bootstrap diode 603, and a third bootstrap diode 604, a first end of the bootstrap resistor 605 is electrically connected to the input power supply, and anodes of the first bootstrap diode 602, the second bootstrap diode 603, and the third bootstrap diode 604 are electrically connected to the bootstrap resistor 605.
In this embodiment, the high-side output control circuit 104 includes a semiconductor field effect transistor 301, a first not gate unit, a first nor gate unit, and a first and gate unit; the semiconductor field effect transistor 301 is electrically connected with the sampling circuit 103, the first nor gate unit is electrically connected with the three-channel high-side driving circuit 101 and the first nor gate unit respectively, the first nor gate unit is electrically connected with the semiconductor field effect transistor 301, and the first and gate unit is electrically connected with the first nor gate unit, the semiconductor field effect transistor 301 and the three-channel high-side driving circuit 101 respectively.
Wherein the first not gate unit comprises first not gates 302, 303, 304; the first nor gate unit includes first nor gates 305, 307, 309 and serves as a first three-channel high-side output terminal; the first and gate unit comprises a first and gate 306, 308, 310 and serves as a second three-channel high-side output.
In this embodiment, the low-side output control circuit 105 includes a second not gate unit, a second nor gate unit, and a second and gate unit; the second nor gate unit is electrically connected with the three-channel low-side driving circuit 102 and the second nor gate respectively, the second nor gate unit is electrically connected with the current sampling circuit 103, and the second and gate unit is electrically connected with the second nor gate unit, the three-channel low-side driving circuit 102 and the current sampling circuit 103 respectively.
Wherein the second not gate unit comprises second not gates 401, 402, 403; the second nor gate unit comprises second nor gates 404, 406, 408 and serves as a third channel low side output; the second and gate unit comprises a second and gate 405, 407, 409 and serves as a second three channel low side output.
In this embodiment, the current sampling circuit 103 includes a first resistor 501, a second resistor 502, and a comparator 503; the first resistor 501 and the second resistor 502 are arranged in series, the other end of the first resistor 501 is electrically connected with an input power supply, the other end of the second resistor 502 is grounded, a negative electrode pin of the comparator 503 is electrically connected between the first resistor 501 and the second resistor 502, and an output pin of the comparator 503 is electrically connected with the high-side output control circuit 104 and the low-side output control circuit 105 respectively.
In this embodiment, the power supply further includes a fault logic control circuit 106 having a first end electrically connected to the input power supply, and a second end of the fault logic control circuit 106 is electrically connected to the three-channel high-side driver circuit 101 and the three-channel low-side output driver circuit, respectively, and is configured to receive fault signals of the high-side output control circuit 104 and the low-side output control circuit 105 and control corresponding circuits according to the fault signals.
In this embodiment, an undervoltage detection circuit 107 and a first filter 108 are connected in series between the fault logic control circuit 106 and the input power supply, the other end of the undervoltage detection circuit 107 is electrically connected to a first end of the fault logic control circuit 106, and the other end of the first filter 108 is electrically connected to the input power supply.
In this embodiment, the third terminal of the fault logic control circuit 106 is further connected in series with a level shift circuit 109 and a second filter 110, and the other terminal of the level shift circuit 109 is electrically connected to the third terminal of the fault logic control circuit 106.
In this embodiment, as shown in fig. 1, HIN1, HIN2, and HIN3 are signal input ends of the three-channel high-side driving circuit 101; VB1, VB2, VB3 are floating power supply terminals of the three-channel high-side driver circuit 101; VS1, VS2, VS3 are floating grounds of the three-channel high-side driver circuit 101; HO1, HO2, HO3 are signal outputs of the three-channel high-side driver circuit 101; VCC is the power supply for the three-channel low-side driver circuit 102, also the input power supply; LIN1, LIN2, LIN3 are signal inputs of the three-channel low-side driver circuit 102; LO1, LO2, LO3 are signal outputs of the three-channel low-side driver circuit 102; the ITRIP is a current detection circuit terminal, and when the current is detected to be larger than a preset value, the inputs of the HIN1, the HIN2, the HIN3, the LIN1, the LIN2 and the LIN3 are controlled to be invalid, and FAULT signals are output through an error reporting circuit FAULT. The IOUT is a signal output end or a signal output line of the current sampling circuit; h01-1, H02-1 and H03-1 are output ends at the high side of a first three channel, HO1-2, HO2-2 and HO3-2 are output ends at the high side of a second three channel, namely the output ends at the high side of the first three channel and the output ends at the high side of the second three channel are respectively provided with three output ends; l01-1, L02-1, LO3-1 are the first three-channel low-side output, and L01-2, L02-2, LO3-2 are the second three-channel low-side output.
As shown in fig. 2, 606, 609, 612, 615, 618 and 621 are field effect transistors (MOS, field effect transistor), and are electrically connected to the first three-channel high-side output terminal H01-1, H02-1, H03-1 and the first three-channel low-side output terminal L01-1, L02-1, and LO3-1 in a one-to-one correspondence; 607. 610, 613, 616, 619 and 622 are insulated gate bipolar transistors (RC-IGBT tubes and RCIGBT tubes) which are respectively and electrically connected with the second three-channel high-side output ends HO1-2, HO2-2 and HO3-2 and the second three-channel low-side output ends L01-2, L02-2 and LO3-2 in a one-to-one correspondence mode. 608. 611, 614, 617, 620 and 623 are fast recovery diodes electrically connected between the fets 606, 609, 612, 615, 618, 621 and the igbts 607, 610, 613, 616, 619, 622, respectively. VDD is the supply voltage.
In this embodiment, the true output values of the high-side output control circuit 104 in the intelligent power module 100 are shown in table one:
table one, circuit output truth table
IOUT HO1 H01-1 HO1-2 HO2 H02-1 HO2-2 HO3 H03-1 HO3-2
1 1 0 1 1 0 1 1 0 1
1 0 0 0 0 0 0 0 0 0
0 1 1 0 1 1 0 1 1 0
0 0 0 0 0 0 0 0 0 0
In this embodiment, the true output values of the low-side output control circuit 105 in the intelligent power module 100 are shown in table two:
table two, circuit output truth table
IOUT LO1 L01-1 LO1-2 LO2 L02-1 LO2-2 LO3 L03-1 LO3-2
1 1 0 1 1 0 1 1 0 1
1 0 0 0 0 0 0 0 0 0
0 1 1 0 1 1 0 1 1 0
0 0 0 0 0 0 0 0 0 0
The operation principle of the smart power module 100 in this embodiment is as follows: when the input voltage of the current detection circuit terminal ITRIP is greater than or equal to the preset voltage, the output pin of the comparator 503 outputs a high level; when the input voltage of the current detection circuit terminal ITRIP is less than the preset voltage, the output pin of the comparator 503 outputs a low level; the preset voltage is an output voltage after a voltage division circuit is formed by a first resistor 501 and a second resistor 502 which are arranged in series.
Based on the above principle, when the sampled current value of the current sampling circuit 103 is greater than or equal to the preset current value, the output end thereof outputs a high level signal to the high-side output control circuit 104 and the low-side output control circuit 105, at this time, the second three-channel high-side output end and the second three-channel low-side output end correspondingly output a high level, and the first three-channel high-side output end and the first three-channel low-side output end correspondingly output a low level, so as to control the corresponding field effect transistor and the corresponding insulated gate bipolar transistor, and use the insulated gate bipolar transistor as a switching device (inverter device); when the sampling current value of the current sampling circuit 103 is smaller than the preset current value, the output end of the current sampling circuit outputs low level signals to the high-side output control circuit 104 and the low-side output control circuit 105 respectively, at this time, the first three-channel high-side output end and the first three-channel low-side output end correspondingly output high levels, and the second three-channel high-side output end and the second three-channel low-side output end correspondingly output low levels, so that the corresponding field effect transistor and the corresponding insulated gate bipolar transistor are controlled, the field effect transistor is used as a switching device, and the purpose of saving energy is achieved.
Fig. 6 is an electrical schematic diagram of a conventional smart power module, which does not include the current sampling circuit 103, the high-side output control circuit 104, and the low-side output control circuit 105, and therefore, only has a single control line, and only a single igbt can be used as a switching device for control during control, which results in that even when the smart power module operates at a low current, only a high-power igbt can be used as the switching device, and the power consumption ratio of the smart power module is increased.
Certainly, the intelligent power module 100 in this embodiment is further provided with circuits, components and the like necessary for the conventional intelligent power module in addition to the above circuits to form a complete intelligent power module, for example, the power module 100 in this embodiment may further be provided with an over-current or/and over-voltage protection circuit, an over-temperature protection circuit, other resistors, diodes, triodes and the like, and accordingly, other circuits, components and the like in the conventional intelligent power module may be adapted to the intelligent power module 100 in this embodiment.
Compared with the prior art, the present embodiment, by additionally providing the current sampling circuit 103, the high-side output control circuit 104 and the low-side output control circuit 105, can detect the current value of the input power through the current sampling circuit 103, and then output corresponding level signals to the high-side output control circuit 104 and the low-side output control circuit 105, so as to control the output levels of the first three-channel high-side output terminal, the first three-channel low-side output terminal, the second three-channel high-side output terminal and the second three-channel low-side output terminal through the level signals, so as to implement that the field-effect transistor is used as a switching device under the condition of small current, the insulated gate bipolar transistor is used as a switching device under the condition of large current, and further avoid the condition that the power consumption ratio of the insulated gate bipolar transistor is used as a switching device under the condition of small current to increase itself, the purpose of saving energy is achieved.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims (8)

1. An intelligent power module is characterized by comprising a three-channel high-side driving circuit, a three-channel low-side driving circuit, a current sampling circuit, a high-side output control circuit and a low-side output control circuit; the high-side output control circuit is electrically connected with the three-channel high-side driving circuit and is provided with a first three-channel high-side output end and a second three-channel high-side output end; the low-side output control circuit is electrically connected with the three-channel low-side output driving circuit, and the low-side output control circuit is provided with a first three-channel low-side output end and a second three-channel low-side output end; the current sampling circuit is respectively and electrically connected with the high-side output control circuit and the low-side output control circuit and is used for detecting the current value of an input power supply and respectively outputting corresponding level signals to the high-side output control circuit and the low-side output control circuit according to the current value;
each of the first three-channel high-side output end and the first three-channel low-side output end is electrically connected with a field effect transistor serving as a switching device, and each of the second three-channel high-side output end and the second three-channel low-side output end is electrically connected with an insulated gate bipolar transistor serving as a switching device; the high-side output control circuit controls the output levels of the first three-channel high-side output end and the second three-channel high-side output end respectively according to the level signals, and the low-side output control circuit controls the output levels of the first three-channel low-side output end and the second three-channel low-side output end respectively according to the level signals.
2. The intelligent power module as recited in claim 1, wherein the high-side output control circuit comprises a semiconductor field effect transistor, a first not gate unit, a first nor gate unit, and a first and gate unit; the semiconductor field effect transistor is electrically connected with the sampling circuit, the first NOR gate unit is electrically connected with the three-channel high-side driving circuit and the first NOR gate respectively, the first NOR gate unit is electrically connected with the semiconductor field effect transistor, and the first AND gate unit is electrically connected with the first NOR gate unit, the semiconductor field effect transistor and the three-channel high-side driving circuit respectively.
3. The smart power module of claim 1 wherein said low side output control circuit comprises a second not gate unit, a second nor gate unit, and a second and gate unit; the second nor gate unit is electrically connected with the three-channel low-side driving circuit and the second nor gate respectively, the second nor gate unit is electrically connected with the current sampling circuit, and the second and gate unit is electrically connected with the second nor gate unit, the three-channel low-side driving circuit and the current sampling circuit respectively.
4. The smart power module of claim 1 wherein said current sampling circuit comprises a first resistor, a second resistor, and a comparator; the first resistor and the second resistor are arranged in series, the other end of the first resistor is electrically connected with an input power supply, the other end of the second resistor is grounded, a negative electrode pin of the comparator is electrically connected between the first resistor and the second resistor, and an output pin of the comparator is electrically connected with the high-side output control circuit and the low-side output control circuit respectively.
5. The intelligent power module as claimed in claim 1, wherein the three-channel high-side driver circuit comprises a bootstrap circuit, the bootstrap circuit comprises a bootstrap resistor, a first bootstrap diode, a second bootstrap diode and a third bootstrap diode, a first end of the bootstrap resistor is electrically connected to the input power supply, and anodes of the first bootstrap diode, the second bootstrap diode and the third bootstrap diode are electrically connected to the bootstrap resistor.
6. The intelligent power module as recited in claim 1, further comprising a fault logic control circuit having a first end electrically connected to the input power source, and a second end electrically connected to the three-channel high-side driver circuit and the three-channel low-side driver circuit, respectively, for receiving fault signals of the high-side output control circuit and the low-side output control circuit and controlling the corresponding circuits according to the fault signals.
7. The intelligent power module as claimed in claim 6, wherein a brown-out detection circuit and a first filter are connected in series between the fault logic control circuit and the input power supply, another end of the brown-out detection circuit is electrically connected to the first end of the fault logic control circuit, and another end of the first filter is electrically connected to the input power supply.
8. The intelligent power module as claimed in claim 6 or 7, wherein the third terminal of the fault logic control circuit is further provided with a level shift circuit and a second filter in series, and the other end of the level shift circuit is electrically connected with the third terminal of the fault logic control circuit.
CN202210504788.4A 2022-05-10 2022-05-10 Intelligent power module Pending CN114710007A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210504788.4A CN114710007A (en) 2022-05-10 2022-05-10 Intelligent power module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210504788.4A CN114710007A (en) 2022-05-10 2022-05-10 Intelligent power module

Publications (1)

Publication Number Publication Date
CN114710007A true CN114710007A (en) 2022-07-05

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Application Number Title Priority Date Filing Date
CN202210504788.4A Pending CN114710007A (en) 2022-05-10 2022-05-10 Intelligent power module

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