CN114709341B - Scribing method of solar cell, solar cell and photokinetic energy module - Google Patents
Scribing method of solar cell, solar cell and photokinetic energy module Download PDFInfo
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- CN114709341B CN114709341B CN202210631211.XA CN202210631211A CN114709341B CN 114709341 B CN114709341 B CN 114709341B CN 202210631211 A CN202210631211 A CN 202210631211A CN 114709341 B CN114709341 B CN 114709341B
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Abstract
The invention discloses a solar cell scribing method, a solar cell and a photodynamic energy module, and relates to the technical field of solar cells. By using a novel cell scribing method, the usable area on a small substrate is as large as possible, and a small photokinetic energy module can still provide high voltage, so that ambient weak light is absorbed to charge electronic equipment. The method specifically comprises the following steps: carrying out first P1 scribing on the negative electrode layer on the substrate, dividing the negative electrode layer into a plurality of modules to be connected in series, wherein the former module is provided with a notch, and the latter module connected in series is provided with a bulge matched with the notch in shape; scribing lines for the second time through P2 on all the layers sequentially arranged on the negative electrode modules to expose the subsequent negative electrode module, wherein the position of P2 is only positioned in the convex part of the subsequent negative electrode module; and carrying out third P3 scribing on the positive electrode layer arranged at the top of the hole transport layer, and scribing positive electrode modules in one-to-one positive correspondence with the negative electrode modules on the positive electrode layer.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a solar cell scribing method, a solar cell and a photokinetic energy module.
Background
With the coming of the internet of things era, the intelligent hardware is more and more tightly combined with the society, however, most of the intelligent hardware is limited by the capacity of the energy storage battery, and serious inconvenience is brought due to insufficient endurance. The indoor weak light is used for generating power to supply power to the low-power consumption equipment battery, and the method is regarded as an important means capable of efficiently prolonging the endurance. The current indoor photovoltaic technology is mainly an amorphous silicon cell, but the efficiency is low. The novel indoor photovoltaic technology route and the novel structural design are very important for improving the application effect of indoor photovoltaic.
The process of manufacturing the thin film solar cell unit generally comprises a series of processes of substrate selection, transparent bottom electrode manufacturing, surface treatment, liquid phase coating film manufacturing, top electrode manufacturing, edge cleaning etching, inspection testing, packaging and the like.
The front side of the photovoltaic module is provided with an output positive electrode and an output negative electrode, and a plurality of small battery units are connected in series or in parallel between the output positive electrode and the output negative electrode. The connection region between the small battery units in the existing photovoltaic module generally adopts an edge complete connection mode, the area of the connection region is large, the effective light receiving area is reduced, and the efficiency loss is increased. How to reduce the area of the connection region of the cell and increase the effective light receiving area becomes a technical problem to be solved urgently.
Disclosure of Invention
The invention mainly aims to provide a solar cell scribing method, a solar cell and a photokinetic energy module, aiming at reducing the area of a connecting region between cell pieces and increasing the effective light receiving area.
In order to achieve the above object, the present invention provides a method for scribing a solar cell, comprising the following steps:
carrying out first P1 scribing on a negative electrode conducting layer on a substrate, dividing the negative electrode conducting layer into a plurality of negative electrode conducting modules to be connected in series in sequence, wherein a notch is arranged on the former negative electrode conducting module, a bulge which is matched with the notch in shape and partially extends into the notch is arranged on the latter negative electrode conducting module connected in series, a negative electrode connecting line position is reserved on the first negative electrode conducting module, and a first isolating block which is completely disconnected with the last negative electrode conducting module and is opposite to the positive electrode connecting line position is cut on the last negative electrode conducting module;
carrying out secondary P2 scribing on an electron transport layer, an absorption layer and a hole transport layer which are sequentially arranged on the negative electrode conductive module to expose the latter negative electrode conductive module, wherein the orthographic projection of the position of the secondary scribing is only positioned in the convex part of the latter negative electrode conductive module;
and carrying out third P3 scribing on the positive electrode conducting layer arranged at the top of the hole transport layer, and scribing positive electrode conducting modules in one-to-one positive correspondence with the negative electrode conducting modules on the positive electrode conducting layer, wherein each positive electrode conducting module further comprises a positive electrode conducting layer part corresponding to the bulge on the next negative electrode conducting module.
In an embodiment of the present application, during the third scribing operation of P3, the height of the scribing line is less than the height from the positive electrode conductive layer to the electron transport layer.
In an embodiment of the present application, the manufacturing steps of the negative electrode connection position are:
after the first scribing of P1 is completed, a barrier plate for blocking an electron transport layer, an absorption layer, a hole transport layer and a positive conductive layer on the first negative conductive module is partially covered on the first negative conductive module.
In an embodiment of the present application, the manufacturing step of the negative electrode connecting position is:
and after the third time of scribing the P3 line, cutting a second isolation block which is completely disconnected with the positive conductive module on the positive conductive module corresponding to the first negative conductive module, and scribing a P4 line on the second isolation block for the fourth time, wherein the fourth time of scribing the P4 line sequentially penetrates through the second isolation block, the hole transmission layer, the absorption layer and the electron transmission layer to expose the negative conductive module below the second isolation block, the area of the negative connection line is smaller than that of the second isolation block, and the boundary of the negative connection line is not intersected with the boundary of the second isolation block.
In an embodiment of the present application, the positive terminal is located directly above the first spacer, the area of the positive terminal is smaller than the area of the first spacer, and the boundary of the positive terminal does not intersect the boundary of the first spacer.
In an embodiment of the present application, after the scribing line P1 is completed for the first time, cutting along the edge of the negative electrode conducting layer to form an effective negative electrode working area inside the negative electrode conducting layer; and after the P3 scribing line is completed for the third time, cutting along the edge of the positive conductive layer to form an effective positive working area, wherein the area of the effective positive working area is larger than that of the effective negative working area, and the boundary of the effective positive working area does not intersect with that of the effective negative working area.
The application also discloses a solar cell which is manufactured by adopting the scribing method of the solar cell.
In an embodiment of the present application, the solar cell includes at least one of a quantum dot solar cell, a perovskite thin film solar cell, an organic thin film solar cell, a copper indium gallium selenide solar cell, a cadmium telluride solar cell, and an amorphous silicon solar cell.
The application also discloses a light kinetic energy module, including as above arbitrary one solar cell, solar cell is last to be equipped with and to peg graft on the mobile device and will the public head of the electric quantity output that solar cell produced.
In an embodiment of the present application, the solar cell is further provided with a female terminal capable of being connected in series with the male terminals of other solar cells.
Adopt above-mentioned technical scheme, through carrying out the first P1 scribing line to the negative pole conducting layer, make and have the breach on the preceding negative pole conductive module when the first P1 scribing line, have the arch on the last negative pole conductive module, mutually support between arch and the breach, make the preceding positive pole conductive module can connect in the negative pole conductive module of the next cell unit through this bellying part, thereby realize establishing ties between last cell unit and the next cell unit, because it is connected through bellying part, need not to adopt the mode of edge complete connection to connect, make the area in connection region reduce, effectual photic area increases, the generating efficiency of cell unit has been improved.
Drawings
The invention is described in detail below with reference to specific embodiments and the attached drawing figures, wherein:
fig. 1 is a schematic circuit diagram of a first scribe line of the present invention.
Fig. 2 is a schematic circuit diagram of a second scribing line based on fig. 1.
Fig. 3 is a schematic circuit diagram of a third scribed line and a fourth scribed line based on fig. 2.
Fig. 4 is a structural diagram of a photovoltaic module including 20 small battery cells connected in series.
Fig. 5 is an I-V plot of the photodynamic energy module of fig. 4 under 200LUX room light.
Fig. 6 is an I-V plot of fig. 4 under standard sunlight.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the following specific examples are only for illustrating the present invention and are not to be construed as limiting the present invention.
As shown in fig. 1 to 6, in order to achieve the above object, the present invention provides a method for scribing a solar cell 100, comprising the following steps:
carrying out a first P1 scribing line 10 on a negative electrode conducting layer on a substrate, dividing the negative electrode conducting layer into a plurality of negative electrode conducting modules to be connected in series in sequence, wherein a notch 30 is arranged on the former negative electrode conducting module, a bulge 20 which is matched with the notch 30 in shape and partially extends into the notch 30 is arranged on the latter negative electrode conducting module connected in series, a negative electrode connecting line 90 is reserved on the first negative electrode conducting module, and a first isolating block which is completely disconnected with the last negative electrode conducting module and is opposite to a positive electrode connecting line 60 is cut on the last negative electrode conducting module;
carrying out secondary P2 scribing on the electron transport layer, the absorption layer and the hole transport layer which are sequentially arranged on the negative electrode conductive module to expose the subsequent negative electrode conductive module, wherein the orthographic projection of the position of the secondary P2 scribing line 40 is only positioned in the bulge 20 part of the subsequent negative electrode conductive module;
and carrying out third P3 scribing on the positive conductive layer arranged at the top of the hole transport layer to scribe positive conductive modules corresponding to the negative conductive modules one by one, wherein the positive conductive module further comprises a positive conductive layer part corresponding to the protrusion 20 on the latter negative conductive module.
Specifically, the scribing method for the solar cell 100 includes three scribing lines, namely a first scribing line 10 scribed by P1, a second scribing line 40 scribed by P2, and a third scribing line 50 scribed by P3. The scribing line in the application adopts a laser scribing mode to scribe lines.
The solar cell 100 device includes a substrate layer, a negative electrode conductive layer, an electron transport layer, an absorption layer, a hole transport layer, and a positive electrode conductive layer, which are sequentially disposed.
When manufacturing a battery, the substrate with the negative electrode conductive layer is first cleaned in the order of cleaning agent, ultrapure water, acetone, and isopropyl alcohol for at least 5 minutes, respectively, the substrate layer is taken out and dried, and then treated with a plasma cleaner or an ultraviolet sampling cleaner for at least 5 minutes.
Then, a line 10 is scribed on the negative electrode conducting layer on the substrate for the first time by P1, the negative electrode conducting layer is divided into a plurality of mutually independent negative electrode conducting modules by means of laser line scribing, the plurality of negative electrode conducting modules are sequentially connected in series, wherein a notch 30 is correspondingly cut on the former negative electrode conducting module, a protrusion 20 is correspondingly cut on the latter negative electrode conducting module connected in series with the former negative electrode conducting module, the shape of the protrusion 20 is the same as that of the notch 30, and the protrusion 20 partially extends into the notch 30 and is not in contact with the notch 30. Thereby ensuring the independence of each negative electrode conductive module. The first negative electrode conductive module is the foremost negative electrode conductive module to be connected in series in sequence, and a negative electrode wiring position 90 is reserved on the first negative electrode conductive module. The first isolation block which is completely disconnected with the last negative electrode conductive module is cut on the last negative electrode conductive module, the first isolation block is opposite to the positive electrode wiring position 60, and the negative electrode conductive layer, the electron transmission layer, the absorption layer, the hole transmission layer and the positive electrode conductive layer are all evaporated and thin in thickness, so that when the positive electrode is welded, the positive electrode wiring position 60 which is caused by the welding process penetrates through the negative electrode, a short circuit can be caused, and therefore the first isolation block is arranged on the last negative electrode conductive module, and the short circuit in the welding process can be effectively avoided.
After the line 10 is scribed for the first time P1, an electron transport layer, an absorber layer, and a hole transport layer are sequentially coated on the negative conductive layer. After the electron transport layer, the absorber layer, and the hole transport layer are covered, a second P2 scribe line 40 is made on the electron transport layer, the absorber layer, and the hole transport layer.
The line 40 is scribed at the second P2 to expose a portion of the negative conductive modules, and when a positive conductive layer is subsequently deposited on top of the hole transport layer, the positive conductive layer is connected to the negative conductive modules along the path of the line 40 scribed at the second P2, thereby connecting the positive conductive layer to the different negative conductive modules in series.
The second P2 scribe line 40 is used to penetrate the electron transport layer, the absorber layer, and the hole transport layer, and the orthographic projection of the position of the second P2 scribe line 40 is located within the raised 20 portion of the negative conductive module. It is known that the narrower the connecting line, the higher the corresponding resistance, and the wider the connecting line, the lower the resistance. In order to reduce the resistance when the positive electrode conductive layer is connected with the negative electrode conductive module, when the second scribing of P2 is carried out, the area of the second scribing is close to the area of the protrusion 20 to the maximum extent, but the area of the second scribing is always kept smaller than the area of the protrusion 20.
After the second scribing of line 40 by P2 is completed, a positive conductive layer is electroplated over the hole transport layer, where the positive conductive layer overlies the top of the hole transport layer and is in partial communication with the negative conductive layer along the path of the second scribing of line P2. And then carrying out P3 scribing on the positive electrode conducting layer for the third time, and dividing the positive electrode conducting layer into positive electrode conducting modules which are equal to and correspond to the negative electrode conducting modules in number.
When the third P3 scribing is carried out on the positive conducting layer, the positive conducting layer is divided into the positive conducting modules, when the third P3 scribing is carried out, scribing is carried out partially according to the first P1 scribing track, so that the divided positive conducting modules and the divided negative conducting modules are in one-to-one positive correspondence, and when the third P3 scribing passes through the part of the bulge 20 on the next negative conducting module, the third P3 scribing also divides the positive conducting module corresponding to the bulge 20 on the next negative conducting module into the previous positive conducting module. At this time, the positive conductive module is divided into a pair of independent positive conductive modules which correspond to the negative conductive modules one by one.
After the three-time scribing is completed, the previous positive electrode conductive module is connected to the next negative electrode conductive module, and the previous battery unit and the next battery unit are connected in series.
By adopting the technical scheme, the line 10 is carved by carrying out P1 for the first time on the negative electrode conducting layer, the notch 30 is arranged on the previous negative electrode conducting module when the line 10 is carved by P1 for the first time, the bulge 20 is arranged on the next negative electrode conducting module, and the bulge 20 is matched with the notch 30, so that the previous positive electrode conducting module can be partially connected with the negative electrode conducting module of the next battery unit through the bulge 20, thereby realizing the series connection between the previous battery unit and the next battery unit, because the previous battery unit is connected through the bulge 20, the connection is carried out without adopting a mode of edge complete connection, the area of a connecting region is reduced, the effective light receiving area is increased, and the power generation efficiency of the battery unit is improved.
In an embodiment of the present application, the scribing line 50 operated for the third time P3 has a height smaller than the height from the positive conductive layer to the electron transport layer.
Specifically, when the third P3 scribing line 50 is operated, the height of the scribing line is smaller than the height from the positive electrode conductive layer to the electron transport layer, so as to ensure that the third scribing line does not break through to the negative electrode conductive layer, thereby avoiding short circuit between the small battery cells. A small cell unit in the present application refers to a power generation assembly including a positive electrode conductive module, a hole transport layer, an absorption layer, an electron transport layer, and a negative electrode conductive module.
By adopting the technical scheme, the stability of each small battery unit during working is improved, and the safety of each small battery unit is improved.
In an embodiment of the present application, the manufacturing steps of the negative terminal 90 are:
after the line 10 is scribed for the first time by P1, a blocking plate for blocking an electron transport layer, an absorption layer, a hole transport layer and a positive conductive layer on the first negative conductive module is partially covered on the first negative conductive module.
Specifically, the negative terminal 90 is manufactured by the following steps:
after the first P1 scribing is completed, a blocking plate is covered on the first negative conductive module, and the area of the blocking plate is smaller than that of the first negative conductive module. And then, an electron transport layer, an absorption layer, a hole transport layer and a positive electrode conductive layer are evaporated on the negative electrode conductive layer. After the evaporation is completed, the barrier plate is removed, and the negative conductive module is exposed as the negative terminal 90. The condition that can the short circuit appears when effectual having avoided laser to carve.
By adopting the technical scheme, the structure is simple and the implementation is convenient.
In an embodiment of the present application, the negative terminal 90 is manufactured by the following steps:
after the third scribing line 50 of P3 is completed, a second isolation block 80 completely disconnected from the positive conductive module is cut on the positive conductive module corresponding to the first negative conductive module, and a fourth scribing line P4 is performed on the second isolation block 80, the fourth scribing line P4 sequentially penetrates through the second isolation block 80, the hole transport layer, the absorption layer and the electron transport layer to expose the negative conductive module located below the second isolation block 80, wherein the area of the negative wiring line 90 is smaller than that of the second isolation block 80, and the boundary of the negative wiring line 90 does not intersect with the boundary of the second isolation block 80.
Specifically, after the third scribing line 50 of P3 is completed, the second spacer 80 completely disconnected from the positive conductive module corresponding to the first negative conductive module is cut out from the positive conductive module. Since the second isolation block 80 is in an open relationship with the positive conductive module, no conduction occurs between the two when current flows through the two.
At this time, a fourth P4 scribing is performed on the second isolation block 80, the fourth P4 scribing sequentially penetrates through the second isolation block 80, the hole transport layer, the absorption layer and the electron transport layer so as to expose the negative electrode conductive module located below the hole transport layer, the absorption layer and the electron transport layer, and at this time, the negative electrode connection position 90 cannot be short-circuited even when the metal at the top of the second isolation block 80 is connected with the negative electrode conductive module in the laser scribing process.
By adopting the technical scheme, the stable connection of the negative electrode connecting wire position is ensured, the short circuit is avoided, and meanwhile, the structure is simple and convenient to implement.
In an embodiment of the present application, the positive terminal 60 is located directly above the first spacer, the area of the positive terminal 60 is smaller than the area of the first spacer and the boundary of the positive terminal 60 does not intersect the boundary of the first spacer.
Specifically, the positive terminal 60 is located directly above the first spacer, and since the first spacer is disconnected from the negative conductive module, a current does not pass through the first spacer, and thus, when a positive electrode is welded to the positive conductive module, the positive conductive module is not short-circuited even if the positive conductive module is connected to the second spacer 80.
By adopting the technical scheme, the structure is simple and the implementation is convenient.
In an embodiment of the present application, after completing the scribing line 10 of the first time P1, cutting along the edge of the negative electrode conductive layer to form an effective negative electrode working area inside the negative electrode conductive layer; and after the third time of scribing a line 50 by P3, cutting along the edge of the positive conductive layer to form an effective positive working area, wherein the area of the effective positive working area is larger than that of the effective negative working area, and the boundary of the effective positive working area does not intersect with that of the effective negative working area.
Specifically, after the line 10 is scribed at the first time P1, the line is cut along the edge of the negative electrode conductive layer in a manner that:
when the negative electrode conductive module is a square, the negative electrode conductive module is translated for a preset distance along the frame of the square in a phase manner, a concentric small square is formed in the negative electrode conductive module, the small square is a negative electrode effective working area at the moment, and the negative electrode conductive module outside the small square is a cleaned frame.
When the negative electrode conductive module is circular, the negative electrode conductive module is moved inwards along the circular frame for a preset distance, a concentric small circle is formed in the negative electrode conductive module, the small circle is a negative electrode effective working area at the moment, and the negative electrode conductive module outside the small circle is a cleaned frame.
And after the third P3 scribing line 50 is completed, cutting along the edge of the positive conductive layer to form an effective positive working area, wherein the principle of the effective positive working area is the same as the distance of the scribing line of the effective negative working area, the area of the effective positive working area is larger than that of the effective negative working area, and the boundary of the effective positive working area does not intersect with that of the effective negative working area.
By adopting the technical scheme, the edge of the manufactured solar cell 100 is subjected to edge cleaning operation, so that the short circuit of the solar cell 100 is avoided, and the solar cell is simple in structure and convenient to implement.
The application also discloses a solar cell 100 which is manufactured by adopting the scribing method of the solar cell 100.
In an embodiment of the present application, the solar cell 100 includes at least one of a quantum dot solar cell, a perovskite thin film solar cell, an organic thin film solar cell, a copper indium gallium selenide solar cell, a cadmium telluride solar cell, and an amorphous silicon solar cell.
Specifically, when the solar cell 100 is a quantum dot solar cell, the method includes the following steps:
evaporating and plating a negative electrode conducting layer on the substrate;
forming an electron transmission layer on the cathode conducting layer by spin coating a ZnO quantum solution through a spin coater, wherein the rotation speed of the spin coater is 1500-2000rpm and the spin coating is 30s, the concentration of the ZnO quantum solution is 30-50mg/ml, and the solvent is methanol and chloroform with the ratio of 1: 1;
PbI using PbS quantum dots on electron transport layer 2 The liquid phase ligand exchange solution is spin-coated in one step to form an absorption layer, wherein PbS quantum dots PbI 2 The concentration of the liquid phase ligand exchange solution is 200-240mg/ml, the rotating speed of the spin coater is 1000-2000rpm, and the spin coating is carried out for 30 s; or spin-coating a layer of PbS quantum dot film on the electron transport layer, wherein the concentration of PbS quantum dot is 40-50mg/ml, the solvent is octane or n-hexane, the rotation speed of a spin coater is 2000-3000rpm and spin-coating is carried out for 30s, then covering TBAI ligand solution, the rotation speed of the spin coater is 2000-3000rpm and spin-coating is carried out for 30s, then washing unreacted ligand by using methanol, repeating for at least 6 times to form an absorption layer with the required thickness, wherein the concentration of TBAI solution is 8-12mg/ml, and the solvent is methanol;
a hole transmission layer is manufactured on the absorption layer by using a PbS quantum dot-benzoic acid liquid phase ligand exchange solution through one-step spin coating, the concentration of the PbS quantum dot-benzoic acid liquid phase ligand exchange solution is 20mg/ml, the rotation speed of a spin coater is 2000-2500rpm, and the PbS quantum dot-benzoic acid liquid phase ligand exchange solution is spin coated for 30 s; or spin-coating a layer of PbS quantum dot film, wherein the concentration of PbS quantum dots is 40-50mg/ml, the solvent is octane or n-hexane, the rotation speed of a spin coater is 2000-3000rpm and spin-coating for 30s, then covering EDT ligand solution, the rotation speed of the spin coater is 2000-2500rpm and spin-coating for 30s, then cleaning unreacted ligand by using acetonitrile, and repeating for at least 1 time to form a hole transmission layer with the required thickness, wherein the concentration of the EDT ligand solution is 0.01-0.02%, and the solvent is acetonitrile;
and finally, evaporating Au with the thickness of 100nm on the top of the hole transport layer in a high vacuum environment to form a positive electrode conducting layer, and scribing the prepared quantum dot solar cell 100 by adopting the scribing method of the solar cell 100.
In the present application, ZnO means zinc oxide; rpm means revolutions per minute; s represents seconds; PbI 2 Lead iodide; PbS refers to lead sulfide; the EDT ligand solution is 1, 2-ethanedithiol; the TBAI solution is: tetra-n-butylammonium iodide.
When the solar cell 100 is a perovskite thin film solar cell, the method comprises the following steps:
evaporating and plating a negative electrode conducting layer on the substrate;
mixing 5ml of ethanol, 0.11ml of HCl, 125ml of deionized water and 375ml of titanium ethoxide to prepare sol-gel titanium dioxide, filling nitrogen into a reagent bottle, stirring the solution for 48 hours, spin-coating the sol-gel titanium dioxide on a negative electrode conducting layer by a spin coater with the rotating speed of 3000rpm, and annealing at 115 ℃ and 450 ℃ for 30min respectively to form an electron transport layer, wherein the spin coating time of the spin coater is 30 s;
CsPbI is coated on the electron transport layer by a spin coater 3 The quantum dot solution was spin coated at 1000-2000rpm for 30s, and then CsPbI was covered with a solution of lead nitrate or sodium acetate in methyl acetate 3 Ligand exchange is carried out after 1-5s of the surface of the quantum dot film, then methyl acetate is used for cleaning, at least three times are carried out to obtain a film with the required thickness, finally ethyl acetate solution dissolved with cesium iodide is used for covering the surface of the film for 5-10s, methyl acetate is used for cleaning, and then an absorption layer is formed on the electron transport layer, wherein CsPbI 3 The concentration of the quantum dots is 70-90 mg/ml, and the solvent is octane;
mixing 72.3 mg of Spiro-OMeTAD, 1ml of chlorobenzene, 28.8ml of TBP and 17.5ml of Li-TFSI stock solution on the absorption layer to prepare a solution, and spin-coating the solution for 30s at 3000-4000rpm by a spin coater to form a hole transport layer, wherein the concentration of the Li-TFSI stock solution is 520 mg/ml, and the solvent is acetonitrile;
finally, under the vacuum annular condition, a molybdenum oxide layer with the thickness of 10-15nm and Al with the thickness of 150-200nm are evaporated on the hole transport layer to form a positive electrode conductive layer, and the perovskite thin-film solar cell 100 is scribed by adopting any scribing method of the solar cell 100.
Specifically, the method comprises the following steps: HCL means hydrogen chloride; CsPbI 3 The quantum dot solution is lead cesium triiodide; Spiro-OMeTAD refers to solid state electrolytes; TBP means tributyl phosphate; Li-TFSI refers to lithium ion battery electrolyte; al means aluminum.
The battery can generate power under the environment of weak light, so that the battery made of the material can realize weak light power generation, and the application range of the battery is improved.
The application also discloses a photo-kinetic energy module, which comprises the solar cell 100, wherein the solar cell 100 is provided with a male head 130 which can be plugged on mobile equipment and outputs the electric quantity generated by the solar cell 100.
Specifically, the photovoltaic module includes a solar cell 100 and a male connector 130 connected to the solar cell 100, and the male connector 130 can be plugged into a mobile device and supplies power to the mobile device.
In an embodiment of the present application, the solar cell 100 is further provided with a female terminal 120 that can be connected in series with the male terminal 130 of another solar cell 100.
Specifically, the solar cell 100 is further provided with a female terminal 120 which can be connected in series with the male terminal 130 of another solar cell 100, and the male terminal 130 and the female terminal 120 on the solar cell 100 are respectively disposed on two opposite sides of the solar cell 100, or may be disposed on two adjacent sides of the solar cell 100.
By adopting the technical scheme, the application range of the photokinetic energy module is widened, and the photokinetic energy module is simple in structure and convenient to implement.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A scribing method of a solar cell is characterized by comprising the following steps:
carrying out first P1 scribing on a negative electrode conducting layer on a substrate, dividing the negative electrode conducting layer into a plurality of negative electrode conducting modules to be sequentially connected in series, wherein a notch is arranged on the former negative electrode conducting module, a bulge which is matched with the notch in shape and partially extends into the notch is arranged on the latter negative electrode conducting module connected in series, a negative electrode connecting line position is reserved on the first negative electrode conducting module, and a first isolating block which is completely disconnected with the former negative electrode conducting module and is opposite to the positive electrode connecting line position is cut on the last negative electrode conducting module;
carrying out second P2 scribing on an electron transport layer, an absorption layer and a hole transport layer which are sequentially arranged on the negative electrode conductive module to expose the latter negative electrode conductive module, wherein the orthographic projection of the position of the second scribing is only positioned in the convex part of the latter negative electrode conductive module;
and carrying out third P3 scribing on the positive electrode conducting layer arranged at the top of the hole transport layer, and scribing positive electrode conducting modules in one-to-one positive correspondence with the negative electrode conducting modules on the positive electrode conducting layer, wherein each positive electrode conducting module further comprises a positive electrode conducting layer part corresponding to the bulge on the next negative electrode conducting module.
2. The method for scribing a solar cell according to claim 1, wherein the scribing line has a height smaller than a height from the positive conductive layer to the electron transport layer in the third scribing operation of P3.
3. The method for scribing a solar cell as in claim 1, wherein the step of fabricating the negative electrode wiring site comprises:
after the first scribing of P1 is completed, a barrier plate for blocking an electron transport layer, an absorption layer, a hole transport layer and a positive conductive layer on the first negative conductive module is partially covered on the first negative conductive module.
4. The method for scribing a solar cell as in claim 1, wherein the step of fabricating the negative electrode wiring site comprises:
and after the third time of scribing the P3 line, cutting a second isolation block which is completely disconnected with the positive conductive module on the positive conductive module corresponding to the first negative conductive module, and scribing a P4 line on the second isolation block for the fourth time, wherein the fourth time of scribing the P4 line sequentially penetrates through the second isolation block, the hole transmission layer, the absorption layer and the electron transmission layer to expose the negative conductive module below the second isolation block, the area of the negative connection line is smaller than that of the second isolation block, and the boundary of the negative connection line is not intersected with the boundary of the second isolation block.
5. The method of scribing a solar cell of claim 1, wherein a positive wire is located directly above the first spacer block, the positive wire has an area smaller than the area of the first spacer block and a boundary of the positive wire does not intersect the boundary of the first spacer block.
6. The method of scribing a solar cell as in claim 1, further comprising cutting along the edge of the negative conductive layer after completing the first scribing line of P1 to form an effective negative working area inside the negative conductive layer; and after the P3 scribing line is completed for the third time, cutting along the edge of the positive conductive layer to form an effective positive working area, wherein the area of the effective positive working area is larger than that of the effective negative working area, and the boundary of the effective positive working area does not intersect with that of the effective negative working area.
7. A solar cell manufactured by the scribing method of the solar cell according to any one of claims 1 to 6.
8. The solar cell of claim 7, wherein the solar cell comprises at least one of a quantum dot solar cell, a perovskite thin film solar cell, an organic thin film solar cell, a copper indium gallium selenide solar cell, a cadmium telluride solar cell, an amorphous silicon solar cell.
9. A photokinetic energy module, comprising the solar cell of any one of claims 7 to 8, wherein the solar cell is provided with a male plug which can be plugged into a mobile device and outputs the electric quantity generated by the solar cell.
10. The photovoltaic module of claim 9, wherein the solar cell further comprises a female terminal for connecting with a male terminal of another solar cell in series.
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