CN114709288B - A kind of solar cell and diffusion method thereof - Google Patents

A kind of solar cell and diffusion method thereof Download PDF

Info

Publication number
CN114709288B
CN114709288B CN202210359763.XA CN202210359763A CN114709288B CN 114709288 B CN114709288 B CN 114709288B CN 202210359763 A CN202210359763 A CN 202210359763A CN 114709288 B CN114709288 B CN 114709288B
Authority
CN
China
Prior art keywords
treatment
oxygen
source
solar cell
oxidation treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202210359763.XA
Other languages
Chinese (zh)
Other versions
CN114709288A (en
Inventor
白雪飞
黄智�
石鑫鑫
陈帅
马海云
张书界
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tongwei Solar Meishan Co Ltd
Original Assignee
Tongwei Solar Meishan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tongwei Solar Meishan Co Ltd filed Critical Tongwei Solar Meishan Co Ltd
Priority to CN202210359763.XA priority Critical patent/CN114709288B/en
Publication of CN114709288A publication Critical patent/CN114709288A/en
Application granted granted Critical
Publication of CN114709288B publication Critical patent/CN114709288B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The application provides a solar cell and a diffusion method thereof, and belongs to the technical field of photovoltaics. A solar cell and a diffusion method thereof, comprising: and sequentially performing first pre-oxidation treatment, first power supply treatment, second pre-oxidation treatment, second power supply treatment and third power supply treatment on the silicon wafer. The oxygen inflow amount of the first pre-oxidation treatment and the second pre-oxidation treatment is increased. The temperature of the first time of the source treatment, the second time of the source treatment and the third time of the source treatment and the nitrogen carrying phosphorus oxychloride are gradually increased. According to the diffusion method of the solar cell, the shallow junction can be prepared through the cooperation of the two pre-oxidation treatments and the three power supply treatments, meanwhile, the doping non-uniformity is improved, and the blue light response of the solar cell can be improved by the shallow junction, so that the photoelectric conversion efficiency of the solar cell is improved.

Description

Solar cell and diffusion method thereof
Technical Field
The application relates to the technical field of photovoltaics, in particular to a solar cell and a diffusion method thereof.
Background
The environmental pollution caused by non-renewable energy consumption is serious, and the development of renewable clean energy of photovoltaics is accelerated. At present, the solar battery is widely regarded as renewable energy sources, conforms to the trend of global photovoltaic development, and is important in cost reduction and synergy. The efficiency of the crystalline silicon solar cell is improved, and the production process of the cell slice is more required to be improved from the crystalline silicon raw material.
In the preparation process of the single crystal PERC solar cell, a selective emitter manufactured by diffusion is the core. The diffusion forms a P-N junction, and the junction depth and the surface concentration of the P-N junction directly influence the photoelectric conversion efficiency of the solar cell.
At present, the common diffusion process realizes phosphorus source doping through the steps of pre-deposition, high-temperature junction pushing, temperature reduction, impurity absorption, source post-supplementing and the like. The P-N junction after diffusion mainly causes uneven distribution of phosphorus sources on the surface of a silicon wafer and uneven doping, poor uniformity and other problems due to uneven distribution of air flow and over-dense arrangement of silicon wafers during diffusion, so that the efficiency of a battery piece is poor, the conventional large-size monocrystalline silicon wafer is generally provided with two-step through sources in the diffusion process, the diffusion time is longer, the manufactured P-N junction is deeper, the uniformity of sheet resistance in a single sheet is poor, and the surface recombination is larger.
Disclosure of Invention
The application provides a solar cell and a diffusion method thereof, which can prepare shallow junctions and improve the technical problem of uneven doping.
Embodiments of the present application are implemented as follows:
in a first aspect, an example of the present application provides a solar cell and a diffusion method thereof, including: and sequentially performing first pre-oxidation treatment, first power supply treatment, second pre-oxidation treatment, second power supply treatment and third power supply treatment on the silicon wafer.
The first pre-oxidation treatment and the second pre-oxidation treatment are both carried out under the condition of introducing oxygen, the oxygen introducing amount of the first pre-oxidation treatment is 500-600 sccm, and the oxygen introducing amount of the second pre-oxidation treatment is 800-1000 sccm.
The first time of the source treatment, the second time of the source treatment and the third time of the source treatment are all carried out under the conditions of oxygen and nitrogen carrying phosphorus oxychloride, the temperature of the first time of the source treatment is 790-795 ℃, the nitrogen inlet amount of the first time of the source treatment is 800-900 sccm, the temperature of the second time of the source treatment is 800-805 ℃, the nitrogen inlet amount of the second time of the source treatment is 1000-1100 sccm, the temperature of the third time of the source treatment is 810-815 ℃, and the nitrogen inlet amount of the third time of the source treatment is 1500-2000 sccm.
In the technical scheme, the diffusion method of the solar cell can prepare the shallow junction through the cooperation of the two pre-oxidation treatments and the three power supply treatments, and meanwhile, the doping non-uniformity is improved, and the shallow junction can improve the blue light response of the solar cell so as to improve the photoelectric conversion efficiency of the solar cell.
In the diffusion method of the solar cell, the oxygen inlet amount of the second pre-oxidation treatment is larger than that of the first pre-oxidation treatment, so that an oxide layer of a semiconductor substrate is formed, a shallow junction is formed, the surface concentration is reduced, the impurity concentration in the oxide layer of the semiconductor substrate is uniformly distributed, and the phosphorus source doping in the shallow junction is also further uniformly distributed.
In the diffusion method of the solar cell, the temperature of the first time of the through source treatment, the temperature of the second time of the through source treatment and the temperature of the third time of the through source treatment are sequentially increased, the nitrogen inlet amount of the first time of the through source treatment, the nitrogen inlet amount of the second time of the through source treatment and the nitrogen inlet amount of the third time of the through source treatment are sequentially increased, the high-concentration diffusion is carried out on the surface layer of the silicon wafer in a short time, so that a phosphorus-silicon glass layer with high doping concentration is formed on the surface of the silicon wafer only, and phosphorus atoms are uniformly distributed to push a system knot through high Wen Tongyang, thereby remarkably improving the diffusion uniformity and forming N + -N-P structure, reducing surface concentration.
With reference to the first aspect, in a first possible example of the first aspect of the present application, the first pre-oxidation treatment includes heat preservation at 780-785 ℃ and oxygen ventilation for 2-3 min.
With reference to the first aspect, in a second possible example of the first aspect of the present application, the first-pass source treatment includes heat-preservation for 2 to 3min at 790 to 795 ℃ under the condition of introducing oxygen and nitrogen carrying phosphorus oxychloride.
Optionally, the oxygen gas is introduced into the reactor at an amount of 500-600 sccm in the first source introduction treatment.
With reference to the first aspect, in a third possible example of the first aspect of the present application, the second pre-oxidation treatment includes heat preservation at 800-805 ℃ and oxygen ventilation for 2-3 min.
With reference to the first aspect, in a fourth possible example of the first aspect of the present application, the second-pass source treatment includes heat preservation for 2 to 3min at 800 to 805 ℃ under the condition of introducing oxygen and nitrogen carrying phosphorus oxychloride.
Optionally, the oxygen gas is introduced into the reactor at 700-800 sccm in the second time of source introduction treatment.
With reference to the first aspect, in a fifth possible example of the first aspect of the present application, the third-pass source treatment includes heat preservation for 2 to 2.5min at 810 to 815 ℃ under the condition of introducing oxygen and nitrogen carrying phosphorus oxychloride.
Optionally, the oxygen gas inlet amount in the third time of the source passing treatment is 100-1200 sccm.
With reference to the first aspect, in a sixth possible example of the first aspect of the present application, after the third-pass source treatment is completed, the temperature is raised to 845 to 850 ℃, and then high-temperature oxidation treatment is performed at this temperature.
Optionally, the oxygen gas is introduced into the high-temperature oxidation treatment at 400-500 sccm.
Optionally, the high temperature oxidation treatment time is 4-4.5 min.
Optionally, after the high-temperature oxidation treatment is completed, stopping introducing oxygen, and continuing to keep the temperature at 845-850 ℃ for 5-6 min.
With reference to the first aspect, in a seventh possible example of the first aspect of the present application, after the heat preservation is performed at 845-850 ℃ for 5-6 min, the temperature is reduced to 780-795 ℃, and then the post-source treatment is performed, wherein the post-source treatment comprises heat preservation at 790-795 ℃ and under the condition of introducing oxygen and nitrogen carrying phosphorus oxychloride for 12-13 min.
Optionally, the oxygen gas inlet amount in the post-source treatment is 800-900 sccm.
Optionally, the nitrogen gas is introduced into the post-source treatment at 1400-1500 sccm.
Optionally, after finishing the post-source treatment, performing post-oxidation treatment, wherein the post-oxidation treatment comprises heat preservation for 5-5.5 min at 780-785 ℃ under the condition of introducing oxygen.
Optionally, the oxygen gas in the post-oxidation treatment is introduced in an amount of 3000-3500 sccm.
In the above example, the post-oxidation step is performed under an oxygen-enriched condition, so that a layer of high-quality silicon-silicon dioxide interface with lower surface state density can be generated on the surface of the diffused silicon wafer, thereby effectively reducing surface recombination and further improving minority carrier lifetime and short-wave response.
With reference to the first aspect, in an eighth possible example of the first aspect of the present application, the above-mentioned first pre-oxidation treatment, first-pass source treatment, second pre-oxidation treatment, second-pass source treatment, and third-pass source treatment are all performed at a pressure of 60 to 80Pa.
In a second aspect, the present example provides a solar cell manufactured according to the above-described diffusion method of a solar cell.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a diffusion method of a solar cell of the present application;
fig. 2 is an ECV graph of the solar cell manufactured in example 1 and comparative example 1 according to the present application.
Detailed Description
Embodiments of the present application will be described in detail below with reference to examples, but it will be understood by those skilled in the art that the following examples are only for illustrating the present application and should not be construed as limiting the scope of the present application. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
The following specifically describes a solar cell and a diffusion method thereof according to an embodiment of the present application:
the application provides a diffusion method of a solar cell, fig. 1 is a flow chart of the diffusion method of the solar cell, and the diffusion method comprises the following steps: and sequentially performing first pre-oxidation treatment, first power supply treatment, second pre-oxidation treatment, second power supply treatment and third power supply treatment on the silicon wafer.
Wherein the silicon wafer is a silicon wafer with a textured surface.
The texturing process comprises the step of texturing the silicon wafer by alkali to form a textured surface with a pyramid-like structure with a light trapping effect on the surface of the silicon wafer.
Before the first pre-oxidation treatment, vertically placing the silicon wafer with the textured silicon surface into a quartz boat clamping groove, moving the silicon wafer into a low-pressure diffusion furnace tube by depending on a silicon carbide paddle, and heating to 780-785 ℃.
In one embodiment of the application, after the wafer is moved into the low pressure diffuser tube, the temperature is raised to 782 ℃. In other embodiments of the application, after the wafer is moved into the low pressure diffuser tube, it is warmed to 780 ℃, 781 ℃, 783 ℃, 784 ℃, or 785 ℃.
The pressure in the low-pressure diffusion furnace tube is 60-80 Pa.
In one embodiment of the application, the pressure in the low pressure diffuser tube is 60Pa. In other embodiments of the application, the pressure in the low pressure diffusion furnace tube may also be 65Pa, 70Pa, 75Pa, or 80Pa.
Optionally, when the silicon wafer with the textured silicon surface is vertically placed in the quartz boat clamping groove, a back-to-back manner is adopted, that is, the back surface of the silicon wafer is abutted against the back surface.
The first pre-oxidation treatment comprises the steps of introducing oxygen into a low-pressure diffusion furnace for 2-3 min at the temperature of 780-785 ℃.
The oxygen inlet amount in the first pre-oxidation treatment is 500-600 sccm.
In one embodiment of the present application, the oxygen aeration rate in the first pre-oxidation treatment is 550sccm. In other embodiments of the present application, the oxygen aeration rate in the first pre-oxidation treatment is 500sccm, 510sccm, 520sccm, 530sccm, 540sccm, 560sccm, 570sccm, 580sccm, 590sccm, or 600sccm.
The first surface pre-oxidation treatment is performed in advance before diffusion to form a thinner oxide layer, so that the speed of a phosphorus source reaching a silicon substrate is slowed down, the junction depth is reduced, and the surface concentration is reduced.
Heating to 790-795 ℃ and carrying out primary power-on treatment. The first source-passing treatment comprises the steps of introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into a low-pressure diffusion furnace for 2-3 min at the temperature of 790-795 ℃.
In one embodiment of the present application, the first power-on treatment is performed after the temperature is raised to 792 ℃. In other embodiments of the application, the first energizing treatment is performed after heating to 790 ℃, 791 ℃, 793 ℃, 794 ℃ or 795 ℃.
The oxygen inlet amount in the first time of the source treatment is 500-600 sccm.
In one embodiment of the present application, the oxygen aeration rate in the first aeration treatment is 550sccm. In other embodiments of the present application, the oxygen gas is introduced at 500sccm, 510sccm, 520sccm, 530sccm, 540sccm, 560sccm, 570sccm, 580sccm, 590sccm, or 600sccm in the first pass source treatment.
The carrying amount of phosphorus oxychloride in the nitrogen is 7-10wt%.
The nitrogen gas carrying phosphorus oxychloride in the first source treatment has the inlet amount of 800-900 sccm.
In one embodiment of the application, the nitrogen gas carrying phosphorus oxychloride in the first source passing treatment has a nitrogen gas inlet of 850sccm. In other embodiments of the present application, the nitrogen gas carrying phosphorus oxychloride in the first pass source treatment is at 800sccm, 810sccm, 820sccm, 830sccm, 840sccm, 860sccm, 870sccm, 880sccm, 890sccm or 900sccm.
The first pass source process can pre-deposit a shallow diffusion layer with smaller concentration.
Heating to 800-805 deg.c and pre-oxidizing for the second time. The second pre-oxidation treatment comprises the step of introducing oxygen into a low-pressure diffusion furnace for 2-3 min at the temperature of 800-805 ℃.
In one embodiment of the application, a second pre-oxidation treatment is performed after the temperature is raised to 802 ℃. In other embodiments of the application, the second pre-oxidation treatment is performed after the temperature is raised to 800 ℃, 801 ℃, 803 ℃, 804 ℃, or 805 ℃.
The oxygen inlet amount in the second pre-oxidation treatment is 800-1000 sccm.
In one embodiment of the present application, the oxygen aeration rate in the second pre-oxidation treatment is 900sccm. In other embodiments of the present application, the oxygen gas is introduced at 800sccm, 810sccm, 820sccm, 830sccm, 840sccm, 850sccm, 860sccm, 870sccm, 880sccm, 890sccm, 910sccm, 920sccm, 930sccm, 940sccm, 950sccm, 960sccm, 970sccm, 980sccm, 990sccm or 1000sccm in the second pre-oxidation treatment.
The second pre-oxidation treatment forms an oxide layer with the thickness of 1-2 nm through the oxygen with higher flow rate, on one hand, the inactive phosphorus source (PCl) formed by the first through-source treatment is reacted 5 )，PCl 5 Will corrode the silicon substrate; on the other hand, the effect of the subsequent high-concentration phosphorus source on the surface concentration is further slowed down.
The second time of source passing treatment comprises that the mixed gas of oxygen and nitrogen carrying phosphorus oxychloride is introduced into a low-pressure diffusion furnace for 2-3 min at the temperature of 800-805 ℃.
The oxygen inlet amount in the second time of the source treatment is 700-800 sccm.
In one embodiment of the present application, the oxygen aeration rate in the second aeration treatment is 750sccm. In other embodiments of the present application, the oxygen gas is introduced at 700sccm, 710sccm, 720sccm, 730sccm, 740sccm, 760sccm, 770sccm, 780sccm, 790sccm, or 800sccm in the second pass source treatment.
The nitrogen gas carrying phosphorus oxychloride in the second pass source treatment has the inlet amount of 1000-1100 sccm.
In one embodiment of the application, the nitrogen carrying phosphorus oxychloride in the second pass source treatment has a nitrogen inlet of 1050sccm. In other embodiments of the present application, the nitrogen gas carrying phosphorus oxychloride in the second pass source treatment is introduced at a rate of 1000sccm, 1010sccm, 1020sccm, 1030sccm, 1040sccm, 1060sccm, 1070sccm, 1080sccm, 1090sccm or 1100sccm.
The second pass source treatment is the doping of the phosphorus source with higher temperature, the reaction is more active, and the generation of impurities such as an inactive phosphorus source can be reduced.
Heating to 810-815 deg.c and the third power-on treatment. The third time of source passing treatment comprises that the mixed gas of oxygen and nitrogen carrying phosphorus oxychloride is introduced into a low-pressure diffusion furnace for 2 to 2.5min at the temperature of 810 to 815 ℃.
In one embodiment of the present application, the third pass source treatment is performed after the temperature is raised to 812 ℃. In other embodiments of the application, the third pass source treatment is performed after heating to 810 ℃, 811 ℃, 813 ℃, 814 ℃ or 815 ℃.
The nitrogen gas inlet amount of the oxygen in the third time of the source treatment is 1000-1200 sccm.
In one embodiment of the present application, the oxygen aeration rate in the third aeration treatment is 1100sccm. In other embodiments of the present application, the oxygen gas is introduced at 1000sccm, 1010sccm, 1020sccm, 1030sccm, 1040sccm, 1050sccm, 1060sccm, 1070sccm, 1080sccm, 1090sccm, 1110sccm, 1120sccm, 1130sccm, 1140sccm, 1150sccm, 1160sccm, 1170sccm, 1180sccm, 1190sccm, or 1200sccm in the second pass source treatment.
The nitrogen gas carrying phosphorus oxychloride in the third pass source treatment has the inlet amount of 1500-2000 sccm.
In one embodiment of the application, the nitrogen gas carrying phosphorus oxychloride in the third pass source treatment has a nitrogen gas inlet amount of 1750sccm. In other embodiments of the present application, the nitrogen gas carrying phosphorus oxychloride in the third pass source treatment is introduced at a rate of 1500sccm, 1550sccm, 1600sccm, 1650sccm, 1700sccm, 1800sccm, 1850sccm, 1900sccm, 1950sccm or 2000sccm.
The third pass source treatment is high-concentration phosphorus source doping, and can be matched with the first pass source treatment and the second pass source treatment, the concentration is from low to high, a concentration gradient is formed, the phosphorus sources are uniformly distributed, and the uniformity of phosphorus simple substances is improved.
After the third power-on treatment is completed, the temperature is raised to 845-850 ℃ for 5-5.5 min, and high-temperature oxidation treatment is carried out. The high-temperature oxidation treatment comprises the step of introducing oxygen into a low-pressure diffusion furnace for 4-4.5 min at the temperature of 845-850 ℃.
In one embodiment of the present application, the elevated temperature is raised to 847 ℃ and then subjected to a high temperature oxidation treatment. In other embodiments of the application, the elevated temperature is at 845 ℃, 846 ℃, 848 ℃, 849 ℃, or 850 ℃ followed by a high temperature oxidation treatment.
The oxygen inlet amount in the high-temperature oxidation treatment is 500-600 sccm.
In one embodiment of the present application, the oxygen aeration rate in the high temperature oxidation treatment is 550sccm. In other embodiments of the present application, the oxygen aeration rate in the high temperature oxidation treatment is 500sccm, 510sccm, 520sccm, 530sccm, 540sccm, 560sccm, 570sccm, 580sccm, 590sccm, or 600sccm.
And forming a phosphosilicate glass layer after the first-time source passing treatment, the second-time source passing treatment and the third-time source passing treatment, introducing oxygen in the high-temperature oxidation treatment, reacting with an inactive phosphorus source, reducing partial areas with uneven phosphorus source distribution, and further improving uniformity.
After the high-temperature oxidation treatment is finished, stopping introducing oxygen, and continuously preserving the temperature at 845-850 ℃ for 5-6 min.
The diffusion method of the solar cell shortens the duration of the height Wen Bu on the basis of the existing method, and the push junction is shallower.
After the heat preservation is completed, the temperature is reduced to 790-795 ℃ for 15-16 min for impurity removal.
In one embodiment of the application, the temperature is reduced to 792 ℃ for impurity removal. In other embodiments of the application, the temperature is reduced to 790 ℃, 791 ℃, 793 ℃, 794 ℃ or 795 ℃ for impurity removal.
And (5) after cooling and impurity separation are completed, performing post-source-passing treatment. The post-source treatment comprises the step of introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into a low-pressure diffusion furnace for 12-13 min at the temperature of 790-795 ℃.
The oxygen gas is introduced into the reactor at a rate of 800-900 sccm.
In one embodiment of the present application, the oxygen gas is introduced into the post-feed treatment at 850sccm. In other embodiments of the present application, the oxygen is introduced at 800sccm, 810sccm, 820sccm, 830sccm, 840sccm, 860sccm, 870sccm, 880sccm, 890sccm or 900sccm in the post-pass source treatment.
The nitrogen gas carrying phosphorus oxychloride in the post-source treatment has the inlet amount of 1400-1500 sccm.
In one embodiment of the application, the nitrogen gas carrying phosphorus oxychloride in the post-source treatment is introduced at 1450sccm. In other embodiments of the present application, the nitrogen gas carrying phosphorus oxychloride in the post-source treatment is introduced at 1400sccm, 1410sccm, 1420sccm, 1430sccm, 1440sccm, 1460sccm, 1470sccm, 1480sccm, 1490sccm or 1500sccm.
Cooling to 780-785 ℃ and performing post-oxidation treatment. The post-oxidation treatment comprises the step of introducing oxygen into a low-pressure diffusion furnace for 5-5.5 min at the temperature of 780-785 ℃.
In one embodiment of the application, the post-oxidation treatment is performed after the temperature is reduced to 782 ℃. In other embodiments of the application, the post-oxidation treatment is performed after cooling to 780 ℃, 781 ℃, 783 ℃, 784 ℃, or 785 ℃.
The oxygen inlet amount in the post-oxidation treatment is 3000-3500 sccm.
In one embodiment of the present application, the oxygen aeration rate in the post-oxidation treatment was 3250sccm. In other embodiments of the application, the oxygen aeration rate in the post-oxidation treatment is 3000sccm, 3050sccm, 3100sccm, 3150sccm, 3200sccm, 3300sccm, 3350sccm, 3400sccm, 3450sccm, or 3500sccm.
The post oxidation treatment is to generate a layer of silicon-silicon dioxide interface with high quality and lower surface state density on the surface of the diffused silicon wafer under the oxygen-enriched condition, so that the surface recombination can be effectively reduced, and the minority carrier lifetime is prolonged.
Cooling and taking out the boat after finishing the post-oxidation treatment.
And (3) sequentially carrying out laser SE doping, chain oxygen removal, PSG removal, alkali polishing, annealing oxidation, back coating, forward coating, laser grooving, screen printing and sintering on the silicon wafer subjected to the diffusion method, and then sorting and testing the efficiency of the finished battery piece.
According to the diffusion method of the solar cell, the shallow junction can be prepared through the cooperation of the two pre-oxidation treatments and the three power supply treatments, meanwhile, the doping non-uniformity is improved, and the blue light response of the solar cell can be improved by the shallow junction, so that the photoelectric conversion efficiency of the solar cell is improved. The diffusion method of the solar cell is simple in process and low in cost.
In the diffusion method of the solar cell, the oxygen inlet amount of the second pre-oxidation treatment is larger than that of the first pre-oxidation treatment, so that an oxide layer of a semiconductor substrate is formed, a shallow junction is formed, the surface concentration is reduced, the impurity concentration in the oxide layer of the semiconductor substrate is uniformly distributed, and the phosphorus source doping in the shallow junction is also further uniformly distributed.
In the diffusion method of the solar cell, the temperature of the first time of the through source treatment, the temperature of the second time of the through source treatment and the temperature of the third time of the through source treatment are sequentially increased, the nitrogen inlet amount of the first time of the through source treatment, the nitrogen inlet amount of the second time of the through source treatment and the nitrogen inlet amount of the third time of the through source treatment are sequentially increased, the high-concentration diffusion is carried out on the surface layer of the silicon wafer in a short time, so that a phosphorus-silicon glass layer with high doping concentration is formed on the surface of the silicon wafer only, and phosphorus atoms are uniformly distributed to push a system knot through high Wen Tongyang, thereby remarkably improving the diffusion uniformity and forming N + -N-P structure, reducing surface concentration. The post oxidation step is carried out under the oxygen-enriched condition, so that a layer of high-quality silicon-silicon dioxide interface with lower surface state density can be generated on the surface of the diffused silicon wafer, thereby effectively reducing surface recombination and further improving minority carrier lifetime and short-wave response.
The application also provides a solar cell which is manufactured according to the diffusion method of the solar cell.
A solar cell and a diffusion method thereof according to the present application are described in further detail below with reference to examples.
Example 1
The embodiment of the application provides a solar cell and a diffusion method thereof, which comprises the following steps:
s1, pretreatment
And (3) selecting 210 mm-diameter P-type monocrystalline silicon wafers, performing alkali texturing to form a texture similar to a pyramid structure on the surfaces of the silicon wafers, preparing surface textured silicon, vertically inserting the surface textured silicon wafers back to back into a quartz boat clamping groove, moving the silicon wafers into a low-pressure diffusion furnace tube by depending on a silicon carbide paddle, and wherein the pressure in the low-pressure diffusion furnace tube is 60Pa.
S2, first pre-oxidation treatment
And heating to 780 ℃, and introducing oxygen into the low-pressure diffusion furnace for 3min, wherein the oxygen inlet amount is 600sccm.
S3, first-time source processing
And heating to 790 ℃, and introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into the low-pressure diffusion furnace for 5min, wherein the oxygen introducing amount is 600sccm, and the nitrogen introducing amount carrying phosphorus oxychloride is 800sccm.
S4, a second pre-oxidation treatment
And heating to 800 ℃, and introducing oxygen into the low-pressure diffusion furnace for 2min, wherein the oxygen inlet amount is 1000sccm.
S5, second-time source connection processing
At 800 ℃, introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into a low-pressure diffusion furnace for 2min, wherein the oxygen introducing amount is 800sccm, and the nitrogen introducing amount carrying phosphorus oxychloride is 1100sccm.
S6, third-time source processing
And heating to 810 ℃, and introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into the low-pressure diffusion furnace for 2min, wherein the oxygen introducing amount is 1000sccm, and the nitrogen carrying phosphorus oxychloride introducing amount is 2000sccm.
S7, high-temperature oxidation treatment
Heating to 850 ℃ for 5min, and introducing oxygen into the low-pressure diffusion furnace for 4min, wherein the oxygen inlet amount is 600sccm.
S8, heat preservation
Stopping introducing oxygen, and maintaining the temperature at 850 ℃ for 5min.
S9, cooling and impurity removing
Cooling to 790 ℃ for 16 min.
S10, post-power processing
At 790 ℃, the mixed gas of oxygen and nitrogen carrying phosphorus oxychloride is introduced into the low-pressure diffusion furnace for 13min, the oxygen introduction amount is 800sccm, and the nitrogen carrying phosphorus oxychloride introduction amount is 1400sccm.
S11, post-oxidation treatment
Cooling to 780 ℃, introducing oxygen into the low-pressure diffusion furnace for 5min, wherein the oxygen inlet amount is 3500sccm, and then cooling to leave the boat.
S12, post-treatment
And (3) sequentially carrying out laser SE doping, chain oxygen removal, PSG removal, alkali polishing, annealing oxidation, back coating, forward coating, laser grooving, screen printing and sintering on the silicon wafer subjected to the diffusion method, and then sorting and testing the efficiency of the finished battery piece.
Example 2
The embodiment of the application provides a solar cell and a diffusion method thereof, which comprises the following steps:
s1, pretreatment
And (3) selecting 210 mm-diameter P-type monocrystalline silicon wafers, performing alkali texturing to form a texture similar to a pyramid structure on the surfaces of the silicon wafers, preparing surface textured silicon, vertically inserting the surface textured silicon wafers back to back into a quartz boat clamping groove, moving the silicon wafers into a low-pressure diffusion furnace tube by depending on a silicon carbide paddle, and wherein the pressure in the low-pressure diffusion furnace tube is 80Pa.
S2, first pre-oxidation treatment
And heating to 780 ℃, and introducing oxygen into the low-pressure diffusion furnace for 3min, wherein the oxygen inlet amount is 500sccm.
S3, first-time source processing
And heating to 790 ℃, and introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into the low-pressure diffusion furnace for 3min, wherein the oxygen introducing amount is 500sccm, and the nitrogen introducing amount carrying phosphorus oxychloride is 800sccm.
S4, a second pre-oxidation treatment
And heating to 800 ℃, and introducing oxygen into the low-pressure diffusion furnace for 3min, wherein the oxygen inlet amount is 800sccm.
S5, second-time source connection processing
At 800 ℃, introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into a low-pressure diffusion furnace for 3min, wherein the oxygen introducing amount is 700sccm, and the nitrogen introducing amount carrying phosphorus oxychloride is 1000sccm.
S6, third-time source processing
And heating to 810 ℃, and introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into the low-pressure diffusion furnace for 2.5min, wherein the oxygen introducing amount is 1000sccm, and the nitrogen introducing amount carrying phosphorus oxychloride is 1500sccm.
S7, high-temperature oxidation treatment
Heating to 845 ℃ for 5min, and introducing oxygen into the low-pressure diffusion furnace for 4.5min, wherein the oxygen inlet amount is 500sccm.
S8, heat preservation
Oxygen was stopped and incubated at 845℃for 6min.
S9, cooling and impurity removing
Cooling to 790 ℃ for 16 min.
S10, post-power processing
At 790 ℃, the mixed gas of oxygen and nitrogen carrying phosphorus oxychloride is introduced into the low-pressure diffusion furnace for 13min, the oxygen introduction amount is 800sccm, and the nitrogen carrying phosphorus oxychloride introduction amount is 1400sccm.
S11, post-oxidation treatment
Cooling to 780 ℃, introducing oxygen into the low-pressure diffusion furnace for 5.5min, wherein the oxygen inlet amount is 3000sccm, and then cooling to leave the boat.
S12, post-treatment
And (3) sequentially carrying out laser SE doping, chain oxygen removal, PSG removal, alkali polishing, annealing oxidation, back coating, forward coating, laser grooving, screen printing and sintering on the silicon wafer subjected to the diffusion method, and then sorting and testing the efficiency of the finished battery piece.
Example 3
The embodiment of the application provides a solar cell and a diffusion method thereof, which comprises the following steps:
s1, pretreatment
And (3) selecting 210 mm-diameter P-type monocrystalline silicon wafers, performing alkali texturing to form a texture similar to a pyramid structure on the surfaces of the silicon wafers, preparing surface textured silicon, vertically inserting the surface textured silicon wafers back to back into a quartz boat clamping groove, moving the silicon wafers into a low-pressure diffusion furnace tube by depending on a silicon carbide paddle, and wherein the pressure in the low-pressure diffusion furnace tube is 70Pa.
S2, first pre-oxidation treatment
And heating to 785 ℃, and introducing oxygen into the low-pressure diffusion furnace for 2min, wherein the oxygen inlet amount is 600sccm.
S3, first-time source processing
And heating to 795 ℃, and introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into the low-pressure diffusion furnace for 2min, wherein the oxygen introducing amount is 600sccm, and the nitrogen introducing amount carrying phosphorus oxychloride is 900sccm.
S4, a second pre-oxidation treatment
And heating to 805 ℃, and introducing oxygen into the low-pressure diffusion furnace for 2min, wherein the oxygen inlet amount is 1000sccm.
S5, second-time source connection processing
At the temperature of 805 ℃, the mixed gas of oxygen and nitrogen carrying phosphorus oxychloride is introduced into the low-pressure diffusion furnace for 2min, the oxygen introduction amount is 800sccm, and the nitrogen carrying phosphorus oxychloride introduction amount is 1100sccm.
S6, third-time source processing
And heating to 815 ℃, and introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into the low-pressure diffusion furnace for 2min, wherein the oxygen introducing amount is 1200sccm, and the nitrogen carrying phosphorus oxychloride introducing amount is 2000sccm.
S7, high-temperature oxidation treatment
Heating to 850 ℃ for 4min, and introducing oxygen into the low-pressure diffusion furnace for 4min, wherein the oxygen inlet amount is 600sccm.
S8, heat preservation
Stopping introducing oxygen, and maintaining the temperature at 850 ℃ for 5min.
S9, cooling and impurity removing
Cooling to 795 ℃ for 15 min.
S10, post-power processing
At the temperature of 795 ℃, introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into a low-pressure diffusion furnace for 12min, wherein the oxygen introducing amount is 900sccm, and the nitrogen carrying phosphorus oxychloride introducing amount is 1500sccm.
S11, post-oxidation treatment
Cooling to 785 ℃, introducing oxygen into the low-pressure diffusion furnace for 5min, wherein the oxygen inlet amount is 3500sccm, and then cooling to leave the boat.
S12, post-treatment
And (3) sequentially carrying out laser SE doping, chain oxygen removal, PSG removal, alkali polishing, annealing oxidation, back coating, forward coating, laser grooving, screen printing and sintering on the silicon wafer subjected to the diffusion method, and then sorting and testing the efficiency of the finished battery piece.
Comparative example 1
The comparative example of the present application provides a solar cell and a diffusion method thereof, which includes the steps of:
s1, pretreatment
And (3) selecting 210 mm-diameter P-type monocrystalline silicon wafers, performing alkali texturing to form a texture similar to a pyramid structure on the surfaces of the silicon wafers, preparing surface textured silicon, vertically inserting the surface textured silicon wafers back to back into a quartz boat clamping groove, moving the silicon wafers into a low-pressure diffusion furnace tube by depending on a silicon carbide paddle, and wherein the pressure in the low-pressure diffusion furnace tube is 60Pa.
S2, pre-oxidation treatment
And heating to 795 ℃, and introducing oxygen into the low-pressure diffusion furnace for 4min, wherein the oxygen inlet amount is 660sccm and the oxygen inlet amount is 1045sccm.
S3, first-time source processing
At 795 ℃, introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into a low-pressure diffusion furnace for 5min, wherein the oxygen introducing amount is 660sccm, and the nitrogen carrying phosphorus oxychloride introducing amount is 1250sccm.
S4, second-time source processing
And heating to 800 ℃, and introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into the low-pressure diffusion furnace for 2min, wherein the oxygen inlet amount is 660sccm, and the nitrogen inlet amount carrying phosphorus oxychloride is 1250sccm.
S5, high-temperature oxidation treatment
Heating to 845 ℃ for 5min, and introducing oxygen into the low-pressure diffusion furnace for 4min, wherein the oxygen inlet amount is 600sccm.
S6, heat preservation
Oxygen was stopped and incubated at 845℃for 6min.
S7, cooling and impurity removing
The temperature is reduced to 780 ℃ during the use for 16 min.
S8, post-power processing
At 770 ℃, the mixed gas of oxygen and nitrogen carrying phosphorus oxychloride is introduced into the low-pressure diffusion furnace for 13min, wherein the introduced amount of the oxygen is 800sccm, and the introduced amount of the nitrogen carrying phosphorus oxychloride is 1400sccm.
S9, post-oxidation treatment
Oxygen was introduced into the low pressure diffusion furnace for 3min at an oxygen introduction rate of 1500sccm, and then cooled off the boat.
S10, post-treatment
And (3) sequentially carrying out laser SE doping, chain oxygen removal, PSG removal, alkali polishing, annealing oxidation, back coating, forward coating, laser grooving, screen printing and sintering on the silicon wafer subjected to the diffusion method, and then sorting and testing the efficiency of the finished battery piece.
Comparative example 2
The comparative example of the present application provides a solar cell and a diffusion method thereof, which includes the steps of:
s1, pretreatment
And (3) selecting 210 mm-diameter P-type monocrystalline silicon wafers, performing alkali texturing to form a texture similar to a pyramid structure on the surfaces of the silicon wafers, preparing surface textured silicon, vertically inserting the surface textured silicon wafers back to back into a quartz boat clamping groove, moving the silicon wafers into a low-pressure diffusion furnace tube by depending on a silicon carbide paddle, and wherein the pressure in the low-pressure diffusion furnace tube is 60Pa.
S2, first pre-oxidation treatment
And heating to 780 ℃, and introducing oxygen into the low-pressure diffusion furnace for 3min, wherein the oxygen inlet amount is 600sccm.
S3, first-time source processing
And heating to 790 ℃, and introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into the low-pressure diffusion furnace for 5min, wherein the oxygen introducing amount is 600sccm, and the nitrogen introducing amount carrying phosphorus oxychloride is 800sccm.
S4, second-time source processing
And heating to 800 ℃, and introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into the low-pressure diffusion furnace for 2min, wherein the oxygen inlet amount is 800sccm, and the nitrogen inlet amount carrying phosphorus oxychloride is 1100sccm.
S5, third-time source processing
And heating to 810 ℃, and introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into the low-pressure diffusion furnace for 2min, wherein the oxygen introducing amount is 1000sccm, and the nitrogen carrying phosphorus oxychloride introducing amount is 2000sccm.
S6, high-temperature oxidation treatment
Heating to 850 ℃ for 5min, and introducing oxygen into the low-pressure diffusion furnace for 4min, wherein the oxygen inlet amount is 600sccm.
S7, heat preservation
Stopping introducing oxygen, and maintaining the temperature at 850 ℃ for 5min.
S8, cooling and impurity removing
Cooling to 790 ℃ for 16 min.
S9, post-power processing
At 790 ℃, the mixed gas of oxygen and nitrogen carrying phosphorus oxychloride is introduced into the low-pressure diffusion furnace for 13min, the oxygen introduction amount is 800sccm, and the nitrogen carrying phosphorus oxychloride introduction amount is 1400sccm.
S10, post-oxidation treatment
Cooling to 780 ℃, introducing oxygen into the low-pressure diffusion furnace for 5min, wherein the oxygen inlet amount is 3500sccm, and then cooling to leave the boat.
S11, post-treatment
And (3) sequentially carrying out laser SE doping, chain oxygen removal, PSG removal, alkali polishing, annealing oxidation, back coating, forward coating, laser grooving, screen printing and sintering on the silicon wafer subjected to the diffusion method, and then sorting and testing the efficiency of the finished battery piece.
Comparative example 3
The comparative example of the present application provides a solar cell and a diffusion method thereof, which includes the steps of:
s1, pretreatment
And (3) selecting 210 mm-diameter P-type monocrystalline silicon wafers, performing alkali texturing to form a texture similar to a pyramid structure on the surfaces of the silicon wafers, preparing surface textured silicon, vertically inserting the surface textured silicon wafers back to back into a quartz boat clamping groove, moving the silicon wafers into a low-pressure diffusion furnace tube by depending on a silicon carbide paddle, and wherein the pressure in the low-pressure diffusion furnace tube is 60Pa.
S2, first pre-oxidation treatment
And heating to 780 ℃, and introducing oxygen into the low-pressure diffusion furnace for 3min, wherein the oxygen inlet amount is 600sccm.
S3, first-time source processing
And heating to 790 ℃, and introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into the low-pressure diffusion furnace for 5min, wherein the oxygen introducing amount is 600sccm, and the nitrogen introducing amount carrying phosphorus oxychloride is 800sccm.
S4, a second pre-oxidation treatment
And heating to 800 ℃, and introducing oxygen into the low-pressure diffusion furnace for 2min, wherein the oxygen inlet amount is 600sccm.
S5, second-time source connection processing
At 800 ℃, introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into a low-pressure diffusion furnace for 2min, wherein the oxygen introducing amount is 800sccm, and the nitrogen introducing amount carrying phosphorus oxychloride is 1100sccm.
S6, third-time source processing
And heating to 810 ℃, and introducing mixed gas of oxygen and nitrogen carrying phosphorus oxychloride into the low-pressure diffusion furnace for 2min, wherein the oxygen introducing amount is 1000sccm, and the nitrogen carrying phosphorus oxychloride introducing amount is 2000sccm.
S7, high-temperature oxidation treatment
Heating to 850 ℃ for 5min, and introducing oxygen into the low-pressure diffusion furnace for 4min, wherein the oxygen inlet amount is 600sccm.
S8, heat preservation
Stopping introducing oxygen, and maintaining the temperature at 850 ℃ for 5min.
S9, cooling and impurity removing
Cooling to 790 ℃ for 16 min.
S10, post-power processing
At 790 ℃, the mixed gas of oxygen and nitrogen carrying phosphorus oxychloride is introduced into the low-pressure diffusion furnace for 13min, the oxygen introduction amount is 800sccm, and the nitrogen carrying phosphorus oxychloride introduction amount is 1400sccm.
S11, post-oxidation treatment
Cooling to 780 ℃, introducing oxygen into the low-pressure diffusion furnace for 5min, wherein the oxygen inlet amount is 3500sccm, and then cooling to leave the boat.
S12, post-treatment
And (3) sequentially carrying out laser SE doping, chain oxygen removal, PSG removal, alkali polishing, annealing oxidation, back coating, forward coating, laser grooving, screen printing and sintering on the silicon wafer subjected to the diffusion method, and then sorting and testing the efficiency of the finished battery piece.
Test example 1
The solar cell sheets prepared in example 1 and comparative examples 1 to 3 were each measured for sheet resistance and ECV curve, the sheet resistance is shown in table 1, and the ECV curve is shown in fig. 2.
Table 1 sheet resistance of solar cell sheets produced in example 1 and comparative examples 1 to 3
As is clear from table 1, the non-uniformity of the sheet resistance of the solar cell manufactured by the diffusion method of the solar cell of the present application was significantly reduced as is evident from the comparison of example 1 and comparative example 1.
As can be seen from the comparison between example 1 and comparative example 2, comparative example 2 does not have the second pre-oxidation treatment, and the non-uniformity of the sheet resistance of the solar cell manufactured by the diffusion method of the solar cell of comparative example 2 is significantly improved as compared to example 1.
As is clear from the comparison between example 1 and comparative example 3, the second pre-oxidation treatment and the first pre-oxidation treatment in comparative example 3 have the same oxidation introduction amount, and the non-uniformity of the sheet resistance of the solar cell manufactured by the diffusion method of the solar cell of comparative example 3 is significantly improved as compared with example 1.
As is clear from FIG. 2, the junction depth of the solar cell manufactured by the diffusion method of the solar cell of the present application is significantly reduced, and the junction depth is 0.20 to 0.25. Mu.m.
Test example 2
The solar cell sheets obtained in example 1 and comparative examples 1 to 3 were taken out, respectively, and the properties thereof were measured as shown in table 2.
Table 2 properties of solar cell sheets produced in example 1 and comparative examples 1 to 3
Project Ncell Uoc Isc FF Rser Rsh IRev2
Example 1 23.065 0.6923 18.296 80.30 0.00156 436.89 0.08977
Comparative example 1 23.021 0.6905 18.284 80.40 0.00151 419.65 0.09114
Comparative example 2 23.011 0.6915 18.291 80.22 0.00149 444.23 0.08989
Comparative example 3 22.982 0.6910 18.256 80.33 0.00151 423.45 0.0889
As can be seen from table 2, the comparison of example 1 and comparative example 1 shows that the open circuit voltage, short circuit current and photoelectric conversion efficiency of the solar cell manufactured by the diffusion method of the solar cell of the present application are significantly improved.
The above description is only of specific embodiments of the application and is not intended to limit the application, but various modifications and variations can be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (20)

1.一种太阳能电池的扩散方法，其特征在于，所述太阳能电池的扩散方法包括：对硅片依次进行第一次预氧化处理、第一次通源处理、第二次预氧化处理、第二次通源处理和第三次通源处理；1. A diffusion method for a solar cell, characterized in that, the diffusion method for a solar cell comprises: carrying out the first pre-oxidation treatment, the first power source treatment, the second pre-oxidation treatment, and the second pre-oxidation treatment on the silicon wafer successively. Secondary source treatment and third source treatment; 所述第一次预氧化处理和所述第二次预氧化处理均在通入氧气的条件下进行，所述第一次预氧化处理的氧气通入量为500~600sccm，所述第二次预氧化处理的氧气通入量为800~1000sccm；Both the first pre-oxidation treatment and the second pre-oxidation treatment are carried out under the condition of feeding oxygen, the oxygen flow rate of the first pre-oxidation treatment is 500~600 sccm, and the second time Oxygen intake for pre-oxidation treatment is 800~1000sccm; 所述第一次通源处理、所述第二次通源处理和所述第三次通源处理均在氧气和通入携带三氯氧磷的氮气的条件下进行，所述第一次通源处理的温度为790~795℃，所述第一次通源处理的氮气通入量为800~900sccm，所述第二次通源处理的温度为800~805℃，所述第二次通源处理的氮气通入量为1000~1100sccm，所述第三次通源处理的温度为810~815℃，所述第三次通源处理的氮气通入量为1500~2000sccm。The first source treatment, the second source treatment and the third source treatment are all carried out under the conditions of oxygen and nitrogen gas carrying phosphorus oxychloride. The temperature of the source treatment is 790~795°C, the nitrogen flow rate of the first source treatment is 800~900sccm, the temperature of the second source treatment is 800~805°C, the second pass The amount of nitrogen gas in the source treatment is 1000-1100 sccm, the temperature of the third source-through treatment is 810-815°C, and the nitrogen gas flow in the third source-through treatment is 1500-2000 sccm. 2.根据权利要求1所述的太阳能电池的扩散方法，其特征在于，所述第一次预氧化处理包括在780~785℃和通入氧气的条件下保温2~3min。2 . The method for diffusing solar cells according to claim 1 , wherein the first pre-oxidation treatment includes keeping the temperature at 780-785° C. for 2-3 minutes under the condition of feeding oxygen. 3 . 3.根据权利要求1所述的太阳能电池的扩散方法，其特征在于，所述第一次通源处理包括在790~795℃和通入氧气、携带三氯氧磷的氮气的条件下保温2~3min。3. The diffusion method of solar cells according to claim 1, characterized in that, the first-time source treatment includes heat preservation at 790-795°C and the conditions of introducing oxygen and nitrogen carrying phosphorus oxychloride for 2 ~3min. 4.根据权利要求3所述的太阳能电池的扩散方法，其特征在于，所述第一次通源处理中氧气通入量为500~600sccm。4 . The method for diffusing solar cells according to claim 3 , wherein the amount of oxygen introduced in the first source treatment is 500-600 sccm. 5.根据权利要求1所述的太阳能电池的扩散方法，其特征在于，所述第二次预氧化处理包括在800~805℃和通入氧气的条件下保温2~3min。5 . The solar cell diffusion method according to claim 1 , wherein the second pre-oxidation treatment includes keeping the temperature for 2-3 minutes at 800-805° C. and feeding oxygen. 6 . 6.根据权利要求1所述的太阳能电池的扩散方法，其特征在于，所述第二次通源处理包括在800~805℃和通入氧气、携带三氯氧磷的氮气的条件下保温2~3min。6. The diffusion method of solar cells according to claim 1, characterized in that, the second source-through treatment includes keeping warm for 2 hours under the conditions of 800-805°C and the introduction of oxygen and nitrogen carrying phosphorus oxychloride. ~3min. 7.根据权利要求6所述的太阳能电池的扩散方法，其特征在于，所述第二次通源处理中氧气通入量为700~800sccm。7 . The method for diffusing solar cells according to claim 6 , wherein the amount of oxygen introduced in the second source-through treatment is 700-800 sccm. 7 . 8.根据权利要求1所述的太阳能电池的扩散方法，其特征在于，所述第三次通源处理包括在810~815℃和通入氧气、携带三氯氧磷的氮气的条件下保温2~2.5min。8. The diffusion method of solar cells according to claim 1, characterized in that, the third power-on treatment includes keeping warm for 2 hours under the conditions of 810-815°C and introducing oxygen and nitrogen carrying phosphorus oxychloride. ~2.5min. 9.根据权利要求8所述的太阳能电池的扩散方法，其特征在于，所述第三次通源处理中氧气通入量为100~1200sccm。9 . The method for diffusing solar cells according to claim 8 , wherein the amount of oxygen introduced in the third source treatment is 100-1200 sccm. 10.根据权利要求1所述的太阳能电池的扩散方法，其特征在于，完成所述第三次通源处理后，升温至845~850℃，然后在此温度下进行高温氧化处理。10 . The solar cell diffusion method according to claim 1 , wherein after the third power-on treatment is completed, the temperature is raised to 845-850° C., and then a high-temperature oxidation treatment is performed at this temperature. 11 . 11.根据权利要求10所述的太阳能电池的扩散方法，其特征在于，所述高温氧化处理中氧气通入量为400~500sccm。11 . The method for diffusing solar cells according to claim 10 , wherein the amount of oxygen introduced in the high temperature oxidation treatment is 400-500 sccm. 12.根据权利要求10所述的太阳能电池的扩散方法，其特征在于，所述高温氧化处理的时间为4~4.5min。12 . The solar cell diffusion method according to claim 10 , wherein the high temperature oxidation treatment takes 4 to 4.5 minutes. 13 . 13.根据权利要求10所述的太阳能电池的扩散方法，其特征在于，完成所述高温氧化处理后，停止通入氧气，并继续在845~850℃下保温5~6min。13 . The solar cell diffusion method according to claim 10 , characterized in that, after the high temperature oxidation treatment is completed, the introduction of oxygen is stopped, and the temperature is kept at 845-850° C. for 5-6 minutes. 14 . 14.根据权利要求10所述的太阳能电池的扩散方法，其特征在于，在845~850℃下保温5~6min后，降温至780~795℃，然后进行后通源处理，所述后通源处理包括在790~795℃和通入氧气、携带三氯氧磷的氮气的条件下保温12~13min。14. The solar cell diffusion method according to claim 10, characterized in that, after holding the heat for 5-6 minutes at 845-850°C, the temperature is lowered to 780-795°C, and then a post-power-on treatment is performed, the post-power-on treatment The treatment includes holding at 790~795°C for 12~13 minutes under the condition of feeding oxygen and nitrogen carrying phosphorus oxychloride. 15.根据权利要求14所述的太阳能电池的扩散方法，其特征在于，所述后通源处理中氧气通入量为800~900sccm。15 . The solar cell diffusion method according to claim 14 , wherein the amount of oxygen introduced in the post-source treatment is 800-900 sccm. 16.根据权利要求14所述的太阳能电池的扩散方法，其特征在于，所述后通源处理中氮气通入量为1400~1500sccm。16 . The method for diffusing solar cells according to claim 14 , wherein the amount of nitrogen gas introduced in the post-source treatment is 1400-1500 sccm. 17.根据权利要求14所述的太阳能电池的扩散方法，其特征在于，完成所述后通源处理后，进行后氧化处理，所述后氧化处理包括在780~785℃和通入氧气的条件下保温5~5.5min。17. The solar cell diffusion method according to claim 14, characterized in that, after the post-source treatment is completed, a post-oxidation treatment is performed, and the post-oxidation treatment includes the conditions of 780-785°C and the introduction of oxygen Keep warm for 5~5.5min. 18.根据权利要求17所述的太阳能电池的扩散方法，其特征在于，所述后氧化处理中的氧气通入量为3000~3500sccm。18 . The method for diffusing solar cells according to claim 17 , wherein the amount of oxygen introduced in the post-oxidation treatment is 3000-3500 sccm. 19.根据权利要求1~9任一项所述的太阳能电池的扩散方法，其特征在于，所述第一次预氧化处理、所述第一次通源处理、所述第二次预氧化处理、所述第二次通源处理和所述第三次通源处理均在60~80Pa的压力下进行。19. The method for diffusing solar cells according to any one of claims 1 to 9, wherein the first pre-oxidation treatment, the first power supply treatment, and the second pre-oxidation treatment . Both the second source-connection treatment and the third source-connection treatment are carried out under a pressure of 60-80Pa. 20.一种太阳能电池，其特征在于，所述太阳能电池根据权利要求1~19任一项所述的太阳能电池的扩散方法制得。20. A solar cell, characterized in that, the solar cell is produced according to the diffusion method of a solar cell according to any one of claims 1-19.
CN202210359763.XA 2022-04-06 2022-04-06 A kind of solar cell and diffusion method thereof Active CN114709288B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210359763.XA CN114709288B (en) 2022-04-06 2022-04-06 A kind of solar cell and diffusion method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210359763.XA CN114709288B (en) 2022-04-06 2022-04-06 A kind of solar cell and diffusion method thereof

Publications (2)

Publication Number Publication Date
CN114709288A CN114709288A (en) 2022-07-05
CN114709288B true CN114709288B (en) 2023-08-22

Family

ID=82171745

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210359763.XA Active CN114709288B (en) 2022-04-06 2022-04-06 A kind of solar cell and diffusion method thereof

Country Status (1)

Country Link
CN (1) CN114709288B (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150822A (en) * 1998-11-11 2000-05-30 Nec Corp Manufacture of semiconductor device
CN102593264A (en) * 2012-03-28 2012-07-18 泰通(泰州)工业有限公司 Diffusion process for improving solar battery efficiency
CN102723266A (en) * 2012-06-19 2012-10-10 江苏泓源光电科技有限公司 Solar battery diffusion method
CN103094419A (en) * 2013-01-24 2013-05-08 山东力诺太阳能电力股份有限公司 Preparation method of high-efficiency solar cell
CN104716232A (en) * 2015-03-13 2015-06-17 中节能太阳能科技（镇江）有限公司 Solar cell emitter doping distribution method
CN107871660A (en) * 2017-11-07 2018-04-03 山西潞安太阳能科技有限责任公司 A kind of crystal silicon solar energy battery emitter stage phosphorus doping control method
CN112768346A (en) * 2020-12-28 2021-05-07 横店集团东磁股份有限公司 Diffusion process method of selective emitter solar cell

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150822A (en) * 1998-11-11 2000-05-30 Nec Corp Manufacture of semiconductor device
CN102593264A (en) * 2012-03-28 2012-07-18 泰通(泰州)工业有限公司 Diffusion process for improving solar battery efficiency
CN102723266A (en) * 2012-06-19 2012-10-10 江苏泓源光电科技有限公司 Solar battery diffusion method
CN103094419A (en) * 2013-01-24 2013-05-08 山东力诺太阳能电力股份有限公司 Preparation method of high-efficiency solar cell
CN104716232A (en) * 2015-03-13 2015-06-17 中节能太阳能科技（镇江）有限公司 Solar cell emitter doping distribution method
CN107871660A (en) * 2017-11-07 2018-04-03 山西潞安太阳能科技有限责任公司 A kind of crystal silicon solar energy battery emitter stage phosphorus doping control method
CN112768346A (en) * 2020-12-28 2021-05-07 横店集团东磁股份有限公司 Diffusion process method of selective emitter solar cell

Also Published As

Publication number Publication date
CN114709288A (en) 2022-07-05

Similar Documents

Publication Publication Date Title
CN110164759B (en) A Regional Layered Deposition Diffusion Process
CN110459642B (en) Passivated contact battery and preparation method thereof
CN113571602B (en) Secondary diffusion selective emitter and preparation method and application thereof
CN109545673B (en) Oxygen-free diffusion method for crystalline silicon solar cell
CN116288251B (en) Tubular variable-temperature boron diffusion deposition process
CN102315310A (en) Diffusion process in solar panel preparation
CN113437182A (en) Diffusion process and preparation method of solar cell and silicon wafer
CN113193082A (en) Preparation method of TOPCon solar cell
CN103227245B (en) A kind of P type quasi-monocrystalline silicon too can the manufacture method of positive electricity pond PN junction
CN108470798B (en) An oxygen-containing diffusion method for crystalline silicon cells
CN104319308B (en) Method for improving diffusion uniformity of crystalline silicon solar cell
CN114709288B (en) A kind of solar cell and diffusion method thereof
CN102544238A (en) Multi-diffusion manufacturing method for polycrystalline silicon wafer
CN115274915B (en) PN junction preparation method of solar cell
CN120813108A (en) Stepped temperature circulation-propelled boron diffusion process and application thereof
CN105244412B (en) A kind of passivating method of N-type crystal silicon battery boron emitter stage
CN102315309B (en) Solar panel preparing method
CN104752564A (en) Novel diffusion process capable of increasing polysilicon open-circuit voltage
CN113948374A (en) Manufacturing method of boron diffusion SE structure of N-type battery
CN119677210A (en) A method for preparing a solar cell
CN117810296A (en) TOPCon battery high uniformity boron diffusion method
CN112652678B (en) Polycrystalline variable-temperature deposition diffusion method and application thereof
CN117080274A (en) Preparation method of solar cell film and preparation method of N-type TOPCON cell
CN110943141A (en) Silicon wafer diffusion method, solar cell and preparation method thereof
CN121419374A (en) A method for fabricating shallow junctions in photovoltaic cell manufacturing processes

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant