CN114709038A - Piezoresistor matrix chip, high-energy surge protector valve plate and manufacturing method thereof - Google Patents
Piezoresistor matrix chip, high-energy surge protector valve plate and manufacturing method thereof Download PDFInfo
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- CN114709038A CN114709038A CN202210440445.6A CN202210440445A CN114709038A CN 114709038 A CN114709038 A CN 114709038A CN 202210440445 A CN202210440445 A CN 202210440445A CN 114709038 A CN114709038 A CN 114709038A
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- 230000001012 protector Effects 0.000 title claims abstract description 36
- 239000011159 matrix material Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000919 ceramic Substances 0.000 claims abstract description 46
- 239000011521 glass Substances 0.000 claims abstract description 37
- 239000000843 powder Substances 0.000 claims abstract description 36
- 239000002390 adhesive tape Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000000576 coating method Methods 0.000 claims abstract description 33
- 230000007797 corrosion Effects 0.000 claims abstract description 33
- 238000005260 corrosion Methods 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000003822 epoxy resin Substances 0.000 claims abstract description 15
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 15
- 238000003466 welding Methods 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000005496 tempering Methods 0.000 claims abstract description 13
- 230000001680 brushing effect Effects 0.000 claims abstract description 7
- 229910052573 porcelain Inorganic materials 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 19
- 229910052709 silver Inorganic materials 0.000 claims description 19
- 239000004332 silver Substances 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 18
- 239000011267 electrode slurry Substances 0.000 claims description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 12
- 230000010287 polarization Effects 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 8
- 238000005476 soldering Methods 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 239000006255 coating slurry Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
- H01C17/283—Precursor compositions therefor, e.g. pastes, inks, glass frits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/102—Varistor boundary, e.g. surface layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/12—Overvoltage protection resistors
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
Abstract
A piezoresistor matrix chip, a high-energy surge protector valve plate and a manufacturing method thereof comprise a piezoresistor matrix chip, metal electrode plates which are arranged on two end surfaces of the piezoresistor matrix chip and are tightly connected with the piezoresistor matrix chip, and an epoxy resin encapsulating layer outside the piezoresistor matrix chip; the piezoresistor substrate chip is characterized in that insulating coatings are respectively arranged on the outer edge free edges and the side faces of two end faces of a piezoresistor ceramic body, corrosion pits are arranged at the positions, without the insulating coatings, of the two end faces of the piezoresistor ceramic body, and metal surface electrode layers are arranged above the corrosion pits; the varistor ceramic body is manufactured by sticking a glass powder raw adhesive tape on a varistor ceramic body, tempering at high temperature, etching, electrically polarizing the surface, brushing tin, welding and encapsulating by epoxy resin; the invention adopts the piezoresistor etching technology, effectively increases the binding force between the metal surface electrode and the piezoresistor porcelain body, and thus can effectively improve the through-current capacity, the energy tolerance and the power frequency tolerance of the valve plate.
Description
Technical Field
The invention relates to the technical field of piezoresistor manufacturing, in particular to a piezoresistor base body chip, a high-energy surge protector valve plate and a manufacturing method thereof.
Background
The surge protector is connected between a power supply and application equipment or at the forefront end of a power supply loop in the equipment, when abnormal overvoltage does not occur in a power supply system, the surge protector does not act, once a circuit is invaded by external overvoltage pulse, a core nonlinear element surge protector valve plate in the surge protector acts instantly and immediately, and the peak value of the invaded overvoltage pulse is limited within a certain level so as to protect a circuit load element connected in parallel behind the surge protector. The valve plate of the surge protector is one of the most important core elements of the surge protector, and the basic performance requirements of the valve plate are that the valve plate has larger lightning surge energy tolerance, lower residual voltage ratio and stability under power frequency tolerance. In order to meet better performance requirements, engineers develop a series of formulas and manufacturing methods from the intrinsic property of products and the formula and structure of porcelain bodies, and constantly optimize the structural design of surge protector valve plates. For example, a high-performance surge protector valve plate and a manufacturing method thereof (patent application number is CN202011582599.6), a safety surge protector valve plate material and a preparation method thereof (patent number is CN104177082B), an environment self-adaptive surge protector packaging module (patent number is CN112635141A), a piezoresistor edge coating slurry material and a preparation method thereof (patent number is CN104599797B), a high-energy SPD valve plate ceramic coating material and a coating method thereof (patent number is CN106396743B), and a high-performance safety SPD lightning protection valve plate (patent number is CN 204178839U). These patent applications have all improved the electrical property or the security performance of surge protector valve block to a certain extent, but all have had a shortcoming, often because the welding cohesion of surface electrode is not enough, in the heavy current test process, the product itself does not reach intrinsic limit, and the welding appears and drops inefficacy phenomenon, consequently, from the primary design and the technological optimization of product, promote the performance of product and constantly satisfy growing market demand, the space of many technological breakthroughs in addition.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a piezoresistor base body chip, a high-energy surge protector valve plate and a manufacturing method thereof.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
a piezoresistor substrate chip comprises a piezoresistor ceramic body 1, wherein insulation coatings 2A are arranged on the free edges and the side surfaces of the outer edges of two end surfaces of the piezoresistor ceramic body 1; corrosion pits 1A are arranged on the two end faces of the piezoresistor porcelain body 1 and the positions where the insulating coatings 2A are not arranged, and a metal surface electrode layer 3 is arranged above the corrosion pits 1A.
The high-energy surge protector valve plate based on the piezoresistor matrix chip comprises the piezoresistor matrix chip, metal electrode plates 4 tightly arranged on two end faces of the piezoresistor matrix chip, and an epoxy resin encapsulating layer 6 encapsulated outside the piezoresistor matrix chip.
The metal electrode plate 4 is provided with leading-out electrodes 4B and 4C which are respectively and tightly connected with the metal surface electrode layer 3 through a soldering tin layer 5, and the leading-out directions of the two leading- out electrodes 4B and 4C are the same and respectively extend out of the epoxy resin encapsulating layer 6.
And the metal electrode plate 4 is also provided with a vent hole 4A.
Based on the manufacturing method of the high-energy surge protector valve plate, the specific steps are as follows:
1. pasting a glass powder raw adhesive tape: sticking and completely coating the glass powder raw adhesive tape 2 on the outer edge free edges on the two end surfaces of the piezoresistor ceramic body 1 and the side surface of the piezoresistor ceramic body 1;
2. tempering: putting the piezoresistor ceramic body coated with the glass powder raw adhesive tape 2 in the step 1 into a furnace, tempering at 450-700 ℃, preserving heat for 0.2-2 hours, cooling with the furnace, taking out, softening the glass powder raw adhesive tape 2, and completely attaching the coating surface of the glass powder raw adhesive tape to form an insulating coating 2A, thus obtaining the piezoresistor protective substrate;
3. etching: immersing the piezoresistor protective substrate in the step 2 into a hydrofluoric acid solution with the weight percentage of 2-5% for corrosion for 3-20 seconds, immediately taking out, washing the corroded piezoresistor protective substrate by using deionized water, and etching areas without insulation coatings on two end faces of the piezoresistor ceramic body to form corrosion pits 1A;
4. surface electric polarization: printing silver electrode paste on the corrosion pits 1A formed in the step 3 through a screen printing mode, and enabling the silver electrode paste to completely cover the whole corrosion pits 1A on the two end faces of the piezoresistor ceramic body; then drying the silver electrode slurry at the temperature of 60-300 ℃, preserving heat for 0.2-2 hours at the temperature of 480-650 ℃, and performing surface electric polarization to form a surface electrode 3, thus obtaining a piezoresistor matrix chip;
5. brushing tin and welding: screen printing tin paste layers on the surface electrodes at the two ends of the piezoresistor matrix chip prepared in the step (4), and drying and reflow-welding to obtain a piezoresistor matrix chip module with the electrodes at the two ends;
6. and (3) encapsulating: and (5) encapsulating and curing the piezoresistor matrix chip module with the electrodes at the two ends in the step (5) by using an epoxy resin encapsulating layer 6 to obtain the high-energy surge protector valve plate.
The invention has the following advantages:
1. the invention adopts a piezoresistor etching technology, ZnO crystal grains on the surface layers of the two ends of the piezoresistor are etched, most importantly, a Bi-rich phase network structure is formed after etching and is uniformly distributed on the surface layers, the Bi-rich phase network structure is better adhered to surface electrode slurry, and better bonding force is formed between an electrode and a porcelain body in the silver burning process, so that the electrode welding force is greatly improved, and the electrode welding pulling force on the surfaces of the two ends of a surge protector valve plate is greatly improved, so that the through-current capacity, the energy tolerance capability and the power frequency tolerance capability of the surge protector can be further improved.
2. The invention has simple structure, convenient processing and high production efficiency, and is suitable for large-scale industrial production.
Drawings
Fig. 1 is a structural view of a varistor ceramic body in embodiment 1 of the present invention.
FIG. 2 is a structural view of a varistor ceramic body after the glass frit green tape was attached in example 1 of the present invention.
FIG. 3 is a structural view of a varistor protective substrate in example 1 of the present invention.
Fig. 4 is a structural view of the varistor protective substrate after etching in example 1 of the present invention.
Fig. 5 is a structural view of a varistor base chip in example 1 of the present invention.
Fig. 6 is a block diagram of a varistor base chip module with both end electrodes in example 1 of the present invention.
Fig. 7 is a structural diagram of a valve sheet of a high-energy surge protector in embodiment 1 of the present invention.
In the figure: the chip comprises a piezoresistor ceramic body 1, a corrosion pit 1A, a glass powder raw adhesive tape 2, an insulating coating 2A, a metal surface electrode layer 3, a metal electrode plate 4, a vent hole 4A, leading- out electrodes 4B and 4C, a soldering tin layer 5 and an epoxy resin encapsulating layer 6.
Detailed Description
The present invention will be further described with reference to the following examples. It should be noted that, according to the technical solution of the present invention, several variations and modifications can be made without departing from the claims of the present invention, and all of them belong to the protection scope of the present invention.
Referring to fig. 1-5, a piezoresistor substrate chip comprises a piezoresistor ceramic body 1, wherein insulation coatings 2A are respectively arranged on the outer edge free edges and the side surfaces of two end surfaces of the piezoresistor ceramic body 1; corrosion pits 1A are arranged on the two end faces of the piezoresistor porcelain body 1 and the positions where the insulating coatings 2A are not arranged, and a metal surface electrode layer 3 is arranged above the corrosion pits 1A.
As shown in fig. 1 to 7, the high-energy surge protector valve plate based on the varistor substrate chip comprises a varistor substrate chip, metal electrode plates 4 tightly arranged on two end faces of the varistor substrate chip, and an epoxy resin encapsulating layer 6 encapsulating the varistor substrate chip.
The metal electrode plate 4 is provided with leading-out electrodes 4B and 4C which are respectively and tightly connected with the metal surface electrode layer 3 through a soldering tin layer 5, and the leading-out directions of the two leading- out electrodes 4B and 4C are the same and respectively extend out of the epoxy resin encapsulating layer 6; the metal electrode plate 4 is also provided with a vent hole 4A, so that the soldering tin layer 5 is ensured to have no bubbles in the soldering tin process, and the two end faces of the piezoresistor substrate chip can be tightly connected with the metal electrode plate 4.
Example one
The embodiment is based on the manufacturing method of the high-energy surge protector valve plate, and the method comprises the following specific steps:
1. pasting a glass powder raw adhesive tape: sticking and completely coating the glass powder raw adhesive tape 2 on the outer edge free edges on the two end surfaces of the piezoresistor ceramic body 1 and the side surface of the piezoresistor ceramic body 1;
2. tempering: putting the piezoresistor ceramic body coated with the glass powder raw adhesive tape in the step 1 into a furnace, tempering at 500 ℃, preserving heat for 0.5 hour, cooling along with the furnace, taking out, softening the glass powder raw adhesive tape 2, and completely adhering to the coating surface to form an insulating coating 2A, thereby obtaining a piezoresistor protective substrate;
3. etching: immersing the piezoresistor protective substrate in the step 2 into a hydrofluoric acid solution with the weight percentage of 2.5% for corrosion for 3 seconds, quickly taking out, immediately and quickly washing the corroded piezoresistor protective substrate by using deionized water, wherein corrosion pits 1A with the depth of 15-25 microns are formed in regions without insulation coatings on two end faces of the piezoresistor ceramic body;
4. surface electric polarization: printing silver electrode slurry on the corrosion pits 1A formed in the step 3 in a screen printing manner, and enabling the silver electrode slurry to completely cover the whole corrosion pits 1A on the two end faces of the piezoresistor ceramic body; then drying the silver electrode slurry at 200 ℃, preserving the heat at 590 ℃ for 40 minutes, and performing surface electric polarization to form a surface electrode 3 to obtain a piezoresistor substrate chip;
5. brushing tin and welding: screen printing tin paste layers on the surface electrodes at the two ends of the piezoresistor matrix chip prepared in the step (4), and drying and reflow-welding to obtain a piezoresistor matrix chip module with the electrodes at the two ends;
6. and (3) encapsulating: and (5) encapsulating the piezoresistor matrix chip module with the two end electrodes in the step (5) by using epoxy resin, and curing at 190 ℃ for 2 hours to obtain the high-energy surge protector valve plate.
Example two
The embodiment is based on the manufacturing method of the high-energy surge protector valve plate, and the method comprises the following specific steps:
1. pasting a glass powder raw adhesive tape: sticking a glass powder raw adhesive tape and completely coating the glass powder raw adhesive tape on the outer edge free edges on the two end surfaces of the piezoresistor ceramic body and the side surface of the piezoresistor ceramic body;
2. tempering: putting the piezoresistor ceramic body coated with the glass powder raw adhesive tape in the step 1 into a furnace for tempering at 480 ℃, preserving the heat for 1 hour, cooling the furnace and taking out the piezoresistor ceramic body, softening the glass powder raw adhesive tape and then completely adhering the glass powder raw adhesive tape to the coating surface of the piezoresistor ceramic body to form an insulating coating, thus obtaining a piezoresistor protective substrate;
3. etching: immersing the piezoresistor protective substrate in the step 2 into a hydrofluoric acid solution with the weight percentage of 2% for corrosion for 15 seconds, quickly taking out, immediately and quickly washing the corroded piezoresistor protective substrate by using deionized water, wherein corrosion pits with the depth of 30-40 microns are formed in regions without insulating coatings on two end faces of the piezoresistor ceramic body;
4. surface electric polarization: printing silver electrode slurry on the corrosion pits formed in the step 3 by screen printing, and enabling the silver electrode slurry to completely cover the whole corrosion pits on the two end surfaces of the piezoresistor ceramic body; then drying the silver electrode slurry at 250 ℃, preserving the heat at 650 ℃ for 20 minutes, and performing surface electric polarization to form a surface electrode to obtain a piezoresistor matrix chip;
5. brushing tin and welding: screen printing a tin paste layer on the surface electrodes at the two ends of the piezoresistor matrix chip prepared in the step (4), drying and reflow-welding to obtain a piezoresistor matrix chip module with electrodes at the two ends;
6. and (3) encapsulating: and (5) encapsulating the piezoresistor matrix chip module with the two end electrodes in the step (5) by epoxy resin, and curing at 190 ℃ for 2 hours to obtain the high-energy surge protector valve plate.
EXAMPLE III
The embodiment is based on the manufacturing method of the high-energy surge protector valve plate, and the method comprises the following specific steps:
1. pasting a glass powder raw adhesive tape: sticking a glass powder raw adhesive tape and completely coating the glass powder raw adhesive tape on the outer edge free edges on the two end surfaces of the piezoresistor ceramic body and the side surface of the piezoresistor ceramic body;
2. tempering: putting the piezoresistor ceramic body coated with the glass powder raw adhesive tape in the step 1 into a furnace for tempering at 550 ℃, preserving the heat for 30 minutes, cooling the glass powder raw adhesive tape along with the furnace, taking out the glass powder raw adhesive tape, softening the glass powder raw adhesive tape, and completely attaching the coated surface of the glass powder raw adhesive tape to form an insulating coating to obtain a piezoresistor protective substrate;
3. etching: immersing the piezoresistor protective substrate in the step 2 into a hydrofluoric acid solution with the weight percentage of 5% for corrosion for 3 seconds, quickly taking out, immediately and quickly washing the corroded piezoresistor protective substrate by using deionized water, wherein corrosion pits with the depth of 25-35 microns are formed in regions without insulation coatings on two end faces of the piezoresistor ceramic body;
4. surface electric polarization: printing silver electrode slurry on the corrosion pits formed in the step 3 by screen printing, and enabling the silver electrode slurry to completely cover the whole corrosion pits on the two end surfaces of the piezoresistor ceramic body; then drying the silver electrode slurry at 150 ℃, preserving the heat at 550 ℃ for 70 minutes, and performing surface electric polarization to form a surface electrode to obtain a piezoresistor matrix chip;
5. brushing tin and welding: screen printing tin paste layers on the surface electrodes at the two ends of the piezoresistor matrix chip prepared in the step (4), and drying and reflow-welding to obtain a piezoresistor matrix chip module with the electrodes at the two ends;
6. and (3) encapsulation: and (5) encapsulating the piezoresistor matrix chip module with the two end electrodes in the step (5) by using epoxy resin, and curing at 190 ℃ for 2 hours to obtain the high-energy surge protector valve plate.
In order to detect the performance of the invention, compared with the existing product through testing, the basic performance is not changed, meanwhile, the bonding force between the metal surface electrode and the piezoresistor ceramic body is increased by more than 80%, the through-flow capacity and the energy tolerance of the valve plate are increased by more than 20%, the power frequency tolerance is increased by more than 20%, and the test results are as follows:
Claims (5)
1. a piezoresistor substrate chip is characterized by comprising a piezoresistor ceramic body (1), wherein insulation coatings (2A) are arranged on the free edges and the side surfaces of the outer edges of two end surfaces of the piezoresistor ceramic body (1); corrosion pits (1A) are arranged on two end faces of the piezoresistor porcelain body (1) and positions where the insulating coatings (2A) are not arranged, and metal surface electrode layers (3) are arranged above the corrosion pits (1A).
2. The valve plate of the surge protector with high energy based on the varistor substrate chip as claimed in claim 1, wherein the valve plate comprises the varistor substrate chip, metal electrode plates (4) tightly arranged on two end faces of the varistor substrate chip, and an epoxy resin encapsulating layer (6) encapsulating the varistor substrate chip.
3. The valve plate of the high-energy surge protector as claimed in claim 2, wherein the metal electrode plate (4) is provided with lead-out electrodes (4B, 4C) which are respectively and tightly connected with the metal surface electrode layer (3) through a soldering tin layer (5), and the lead-out directions of the two lead-out electrodes (4B, 4C) are the same and respectively extend out of the epoxy resin encapsulating layer (6); and the metal electrode plate (4) is also provided with a vent hole (4A).
4. The manufacturing method of the high-energy surge protector valve plate based on the claim 2 or 3 is characterized by comprising the following specific steps:
(1) pasting a glass powder raw tape: sticking the glass powder raw adhesive tape (2) and completely coating the glass powder raw adhesive tape on the outer edge free edges on the two end surfaces of the piezoresistor ceramic body (1) and the side surfaces of the piezoresistor ceramic body (1);
(2) tempering: putting the piezoresistor ceramic body coated with the glass powder raw adhesive tape (2) in the step 1 into a furnace, tempering at 450-700 ℃, preserving heat for 0.2-2 hours, cooling along with the furnace, taking out, softening the glass powder raw adhesive tape (2), and completely attaching the coating surface of the glass powder raw adhesive tape to form an insulating coating (2A), thereby obtaining a piezoresistor protective substrate;
(3) etching: immersing the piezoresistor protective substrate in the step 2 into a hydrofluoric acid solution with the weight percentage of 2-5% for corrosion for 3-20 seconds, immediately taking out, washing the corroded piezoresistor protective substrate by using deionized water, and etching areas without insulation coatings on two end faces of the piezoresistor ceramic body to form corrosion pits (1A);
(4) surface electric polarization: printing silver electrode slurry on the corrosion pits (1A) formed in the step 3 by silk-screen printing, and enabling the silver electrode slurry to completely cover the whole corrosion pits (1A) on the two end surfaces of the piezoresistor ceramic body; then drying the silver electrode slurry at the temperature of 60-300 ℃, preserving heat for 0.2-2 hours at the temperature of 480-650 ℃, and performing surface electric polarization to form a surface electrode (3) so as to obtain a piezoresistor matrix chip;
(5) brushing tin and soldering: screen printing tin paste layers on the surface electrodes at the two ends of the piezoresistor matrix chip prepared in the step (4), and drying and reflow-welding to obtain a piezoresistor matrix chip module with the electrodes at the two ends;
(6) encapsulation: and (5) encapsulating and curing the piezoresistor matrix chip module with the electrodes at the two ends in the step (5) by using an epoxy resin encapsulating layer (6) to obtain the high-energy surge protector valve plate.
5. The manufacturing method of the high-energy surge protector valve plate according to claim 4, comprising the following specific steps:
(1) pasting a glass powder raw tape: sticking a glass powder raw adhesive tape and completely coating the glass powder raw adhesive tape on the outer edge free edges on the two end surfaces of the piezoresistor ceramic body and the side surface of the piezoresistor ceramic body;
(2) tempering: putting the piezoresistor ceramic body coated with the glass powder raw adhesive tape in the step 1 into a furnace, tempering at 550 ℃, preserving heat for 30 minutes, cooling along with the furnace, taking out, softening the glass powder raw adhesive tape, and completely adhering to the coating surface to form an insulating coating to obtain a piezoresistor protective substrate;
(3) etching: immersing the piezoresistor protective substrate in the step 2 into a hydrofluoric acid solution with the weight percentage of 5% for corrosion for 3 seconds, quickly taking out, immediately and quickly washing the corroded piezoresistor protective substrate by using deionized water, wherein corrosion pits with the depth of 25-35 microns are formed in regions without insulation coatings on two end faces of the piezoresistor ceramic body;
(4) surface electric polarization: printing silver electrode slurry on the corrosion pits formed in the step 3 by screen printing, and enabling the silver electrode slurry to completely cover the whole corrosion pits on the two end surfaces of the piezoresistor ceramic body; then drying the silver electrode slurry at 150 ℃, preserving the heat at 550 ℃ for 70 minutes, and performing surface electric polarization to form a surface electrode to obtain a piezoresistor matrix chip;
(5) brushing tin and soldering: screen printing a tin paste layer on the surface electrodes at the two ends of the piezoresistor matrix chip prepared in the step (4), drying and reflow-welding to obtain a piezoresistor matrix chip module with electrodes at the two ends;
(6) encapsulation: and (5) encapsulating the piezoresistor matrix chip module with the two end electrodes in the step (5) by using epoxy resin, and curing at 190 ℃ for 2 hours to obtain the high-energy surge protector valve plate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210440445.6A CN114709038A (en) | 2022-04-25 | 2022-04-25 | Piezoresistor matrix chip, high-energy surge protector valve plate and manufacturing method thereof |
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| CN202210440445.6A CN114709038A (en) | 2022-04-25 | 2022-04-25 | Piezoresistor matrix chip, high-energy surge protector valve plate and manufacturing method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10163009A (en) * | 1996-11-29 | 1998-06-19 | Taiyo Yuden Co Ltd | Manufacture of non-linear resistor dependent on voltage |
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