CN114703460A - Preparation method of rare earth element doped hafnium-based binary oxide film - Google Patents
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- 229910052761 rare earth metal Inorganic materials 0.000 title claims abstract description 37
- 229910052735 hafnium Inorganic materials 0.000 title claims abstract description 27
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 42
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 26
- 239000001301 oxygen Substances 0.000 claims abstract description 26
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000004544 sputter deposition Methods 0.000 claims abstract description 22
- 230000005669 field effect Effects 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 229910052786 argon Inorganic materials 0.000 claims abstract description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 7
- 229910002056 binary alloy Inorganic materials 0.000 claims abstract description 6
- 238000005516 engineering process Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 230000001276 controlling effect Effects 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 2
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 2
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 2
- 150000002910 rare earth metals Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- 239000013077 target material Substances 0.000 abstract description 6
- 238000012864 cross contamination Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- VZVQQBDFMNEUHK-UHFFFAOYSA-N [La].[Hf] Chemical compound [La].[Hf] VZVQQBDFMNEUHK-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 229910001029 Hf alloy Inorganic materials 0.000 description 3
- 229910000858 La alloy Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001325 element alloy Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Abstract
The invention belongs to the field of electronic information materials and components, and particularly relates to a preparation method and application of a rare earth element doped hafnium-based binary oxide film. By utilizing the characteristic that the rare earth element has stronger oxygen bonding capability, the following effects are achieved: when less oxygen is introduced, the oxide rich in rare earth elements is preferentially formed; when the oxygen supply is sufficient, the Hf content in the film rises. The method is based on a single-target radio frequency magnetron sputtering technology, adopts a binary alloy target containing rare earth elements and hafnium (Hf) elements, accurately regulates and controls the element proportion between the rare earth elements and the Hf in the binary oxide film by controlling the flow ratio of argon and oxygen in sputtering atmosphere, does not need to be additionally provided with other target materials, and has the advantages of simple preparation process, high control precision, low cost and avoidance of the risk of multi-target cross contamination. In addition, the hafnium-based binary oxide thin film prepared by the method is applied to a graphene field effect transistor.
Description
Technical Field
The invention belongs to the field of electronic information materials and components, and particularly relates to a preparation method of a hafnium-based binary oxide film doped with rare earth elements.
Background
The improvement of the integration level of the field effect transistor enables the characteristic size to be reduced by times, thereby bringing about the problems of increased gate leakage current, reduced reliability of the device and the like. To this endResearchers have actively studied high performance high k oxide dielectric materials in recent years to replace conventional silicon dioxide (SiO)2) And is used as a gate dielectric in a field effect transistor. Wherein hafnium oxide (HfO)2) The high dielectric constant (k is 25) and the large conduction band difference (1.4eV) between the silicon substrate are the most promising substitutes for the traditional SiO2The novel high-k material of (1). However, HfO2The thin film has a high defect density and strong carrier scattering, and is liable to cause deterioration of device performance such as mobility reduction and threshold voltage drift.
It has been found that the rare earth element is doped into HfO2The hafnium-based binary oxide film is formed, so that the oxygen vacancy in the material is reduced, the defect density is reduced, and the Fermi pinning effect is inhibited, thereby further improving the performance of the device. However, rare earth elements are generally hygroscopic, so that excessive incorporation of rare earth elements makes the oxide thin film susceptible to deliquescence, thereby increasing the surface roughness of the thin film, introducing more interface defects, and ultimately deteriorating device performance. Therefore, how to accurately regulate and control the element ratio between the rare earth element and the Hf is very important for preparing the high-performance hafnium-based binary oxide film.
Prior art techniques are in the preparation of hafnium-based binary oxide films (e.g., HfSiO)4HfTaO, HfAlO and HfGdO), a dual-target magnetron sputtering co-deposition method is often adopted, i.e., the element ratio between the rare earth element and Hf in the binary oxide film is regulated and controlled by controlling the sputtering power (radio frequency mode) or the current (direct current mode) of different target positions. It is conventional practice to use two metal targets or two metal oxide ceramic targets, or one metal oxide ceramic target and one metal target. Because the element content of the target material is fixed, the dual-target cooperation is usually needed to prepare the binary oxide films with different rare earth element/Hf element ratios, the process is complicated, the control precision is limited, the cost is high, and the risk of cross contamination exists among multiple targets.
Disclosure of Invention
The invention aims to provide a preparation method of a rare earth element doped hafnium-based binary oxide film, which simplifies the preparation process of the binary oxide film and realizes efficient and accurate regulation and control of the element ratio between the rare earth element and Hf in the film.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for preparing a rare earth element doped hafnium-based binary oxide film takes a monocrystalline silicon wafer as a substrate and comprises two steps of substrate cleaning and film deposition, wherein the substrate cleaning is a conventional operation well known by persons skilled in the art and is not described herein any more, and the film deposition step is as follows: based on single-target radio frequency magnetron sputtering technology, a binary alloy target containing rare earth elements and hafnium (Hf) is adopted, and the flow ratio (Ar: O) of argon and oxygen in sputtering atmosphere is controlled2) The element proportion between the rare earth element and Hf in the binary oxide film is regulated and controlled, so that the application requirement of the high-performance gate dielectric is met.
Further, the sputtering incident power is 80W-120W, and the sputtering time duration at room temperature is 3 h.
Furthermore, in the sputtering process, the normal direction of the target surface of the binary alloy single target is parallel to the normal direction of the monocrystalline silicon piece.
Furthermore, during the radio frequency magnetron sputtering, the air pressure of the sputtering vacuum chamber is lower than 10-5Pa。
Further, the substrate is a p-type monocrystalline silicon wafer with a crystal phase of 100.
Further, the rare earth element is any one of lanthanum, gadolinium, lutetium, holmium and the like.
Further, in the sputtering process, the argon flow is fixed at 24sccm, and the oxygen flow is changed within the range of 3sccm to 10sccm, so that the La/Hf element proportion in the hafnium-based binary oxide film is randomly regulated and controlled within the range of 2:1 to 3: 1.
The invention also provides an application of the HfLaO film prepared by the technical scheme in a graphene field effect transistor.
The invention provides a preparation method of a rare earth element doped hafnium-based binary oxide film, which utilizes the characteristic that the rare earth element has stronger oxygen bonding capacity to achieve the following effects: when less oxygen is introduced, the oxide rich in rare earth elements is preferentially formed; when the oxygen supply is sufficient, the Hf content in the film rises. The method is based on a single-target radio frequency magnetron sputtering technology, adopts a binary alloy target containing rare earth elements and hafnium (Hf), accurately regulates and controls the element proportion between the rare earth elements and the Hf in the binary oxide film by controlling the flow ratio of argon to oxygen in sputtering atmosphere without additionally preparing other target materials, and has the advantages of simple preparation process, high control precision, low cost and avoidance of the risk of multi-target cross contamination. In addition, the hafnium-based binary oxide film prepared by the method can be applied to a graphene field effect transistor, and the performance of a device can be improved.
Drawings
FIG. 1 is an EDS chart of a sample of a hafnium lanthanum binary oxide thin film of example 4;
FIG. 2 is an AFM image of a sample of the hafnium lanthanum binary oxide thin film of example 4;
FIG. 3 is a schematic structural diagram of an embodiment of a hafnium lanthanum binary oxide thin film graphene field effect transistor;
FIG. 4 is a flow chart illustrating the fabrication of an embodiment hafnium lanthanum binary oxide thin film graphene field effect transistor;
FIG. 5 shows a full back gate graphene field effect transistor and 300nm SiO using HfLaO film as the dielectric in the group of samples of example a2A transfer characteristic curve diagram of a full back gate graphene field effect transistor;
reference numerals:
1. a substrate layer; 2. a dielectric layer; 3. a graphene active region; 4. a source electrode; 5. and a drain electrode.
Detailed Description
The technical solution of the present invention is further described below with reference to the following embodiments and the accompanying drawings.
The invention provides a preparation method of a rare earth element doped hafnium-based binary oxide film, in the embodiment, the rare earth element is specifically lanthanum element, Hf/La alloy single target is adopted for sputtering, and the flow ratio (Ar: O) of argon and oxygen in the sputtering process is controlled2) To regulate and control the La/Hf element ratio in the obtained binary oxide filmFor example, the polyoxide thin film can be successfully prepared under the condition of limited experimental equipment conditions (only a single target site). Specifically, the method comprises the following steps:
a method for preparing a rare earth element doped hafnium-based binary oxide film selects a p-type heavily-doped monocrystalline silicon piece as a substrate, the crystalline phase of the monocrystalline silicon piece is (100), an experiment comprises the steps of cleaning the substrate and depositing a film, the cleaning of the substrate is conventional operation well known by a person skilled in the art, and details are not described herein, the step of depositing the film adopts a radio frequency magnetron sputtering technology, and a Hf/La (40% Hf) alloy single target is adopted as a target material. The normal direction of the target surface of the Hf/La alloy single target is parallel to the normal direction of the monocrystalline silicon wafer during sputtering, and the vacuum degree of the sputtering vacuum chamber is higher than 10-5Pa. The sputtering incident power ranged from 80W to 120W, and was fixed at 120W in this example. Taking the mixed atmosphere of argon and oxygen as reaction atmosphere, wherein the flow of introduced argon is fixed at 24sccm, and the flow of introduced oxygen is 3 sccm-10 sccm; sputtering and depositing for 3h at room temperature by controlling the ratio of argon to oxygen (Ar: O) in the atmosphere2) Obtaining the HfLaO film with the Hf/La element proportion meeting the application requirement.
According to the above steps, the ratio of argon to oxygen in the introduced atmosphere is controlled, the flow rates of the introduced oxygen are set to 3sccm, 4sccm, 6sccm and 10sccm, respectively, so as to prepare 4 groups of samples, which are numbered abcd in sequence, and the EDS scan of a representative sample in the 4 groups of samples is shown in fig. 1, and the corresponding surface topography is shown in fig. 2. Based on the test results, the experimental conditions and film properties were compared in summary as shown in table 1.
Table 14 element ratios of the samples
From the contents shown in table 1, as the oxygen flow rate increases, the element ratio of La to Hf in the deposited film gradually increases from 3:1 is reduced to 2:1, which illustrates that the oxygen flow can directly affect the stoichiometry of the deposited film. The main reasons for this change in ratio are two: one is the concept of "saturated vapor pressure" in metal vapor deposition, which is defined as the vapor pressure at which a solid or liquid is placed in a closed container and evaporates at any temperature, the evaporated vapor forming vapor pressure, and at a certain temperature, the number of molecules evaporated per unit time is equal to the number of molecules condensed on the walls and returned to the evaporated material. The vapor pressure directly affects the evaporation rate, and the vapor pressure of different substances varies with the difference in physicochemical properties. Although the Hf/La alloy target used in this embodiment is a sputtering coating, the temperature of the target material increases during the sputtering process, that is, the evaporation process still exists in this embodiment, wherein the different saturation vapor pressures of the metal Hf and the metal La cause the deposition rates of the element Hf and the element La to be different, resulting in the element ratio in the thin film being different from that in the target material. Secondly, the content of the oxide of Hf and La deposited on the substrate by reactive sputtering is different because the sputtered Hf particles and La particles have different 'oxophilic forces'. The La element has the characteristics of oxygen absorption, moisture absorption and deliquescence, the oxygen absorption capacity is higher than that of the Hf element, when the oxygen flow is small, ionized oxygen atoms are preferentially sputtered out to be absorbed by the La atoms, and the proportion of the La element in the deposited film is far higher than that of the Hf element; as the oxygen flow rate is gradually increased, the amount of La atoms sputtered does not increase, and the excess oxygen combines with Hf atoms, so that the ratio of La to Hf in the deposited film gradually decreases.
Based on the HfLaO thin film prepared in the above embodiments, the present embodiment also provides an application of the HfLaO thin film in a graphene field effect transistor. FIG. 3 is a schematic cross-sectional view of an embodiment of a hafnium lanthanum binary oxide thin film graphene field effect transistor; as shown in fig. 3, the transistor includes a substrate layer 1, a dielectric layer 2, a graphene active layer 3, a source electrode 4 and a drain electrode 5; the substrate layer 1 is provided with a dielectric layer 2, and the dielectric layer 2 is divided into a source electrode area, an active area and a drain electrode area; the graphene active layer 3 is manufactured in an active region of the dielectric layer 2, an active electrode 4 is arranged between a source electrode region of the dielectric layer 2 and the graphene active layer 3, and a drain electrode 5 is arranged between a drain electrode region of the dielectric layer 2 and the graphene active layer 3. The whole manufacturing process flow is shown in fig. 4, and is different from the conventional graphene field effect transistor in that: the substrate layer 1 is made of p-type heavily doped (100) monocrystalline silicon and is used as a substrate material and a gate electrode; the HfLaO film obtained by the preparation method is selected as the dielectric layer 2.
FIG. 5 shows a full back gate graphene field effect transistor using HfLaO thin film sample of group A as the dielectric and 300nm SiO2Transfer characteristic curve of a fully back-gated graphene field effect transistor as a dielectric. As can be seen from fig. 5, after the HfLaO thin film is selected as the dielectric layer, the dirac point (the turning point in the curve) of the graphene field effect transistor is changed from 46V to 1.8V, which is already very close to the intrinsic dirac point (0V) of graphene. Compared with 300nm SiO2The performance of the full back gate graphene field effect transistor of the medium is greatly improved. Therefore, the rare earth element doped hafnium-based binary oxide film prepared by the invention is applied to the graphene field effect transistor, and when the rare earth element doped hafnium-based binary oxide film is applied to the graphene field effect transistor, on one hand, the problem that a high-k medium is difficult to deposit on graphene is avoided, on the other hand, a new high-k gate medium material is provided for the graphene field effect transistor, and compared with the traditional SiO2The performance of the graphene field effect transistor of the gate dielectric is obviously improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (8)
1. A preparation method of a rare earth element doped hafnium-based binary oxide film mainly comprises two steps of substrate cleaning and film deposition, and is characterized in that: the film deposition step is based on a single-target radio frequency magnetron sputtering technology, a binary alloy target containing rare earth elements and hafnium is adopted, and the element proportion between the rare earth elements and the Hf in the binary oxide film is regulated and controlled by controlling the flow ratio of argon to oxygen in sputtering atmosphere, so that the application requirement of the high-performance gate medium is met.
2. The method according to claim 1, wherein the method comprises the steps of: the sputtering power is 80W-120W, and the sputtering time is 3h at room temperature.
3. The method according to claim 1, wherein the method comprises the steps of: and during sputtering, the normal direction of the target surface of the binary alloy target is parallel to the normal direction of the substrate.
4. The method according to claim 1, wherein the method comprises the steps of: during sputtering, the pressure in the vacuum chamber is lower than 10-5Pa。
5. The method of claim 1, wherein the hafnium-based binary oxide thin film doped with a rare earth element is prepared by: the substrate is a p-type monocrystalline silicon wafer with a crystalline phase of 100.
6. The method according to claim 1, wherein the method comprises the steps of: the rare earth element is any one of lanthanum, gadolinium, lutetium, holmium and the like.
7. The method of claim 6, wherein the hafnium-based binary oxide thin film doped with a rare earth element is prepared by: the argon flow is fixed at 24sccm, and the oxygen flow is changed within the range of 3sccm to 10sccm, so that the La/Hf element proportion in the binary oxide film is randomly regulated and controlled within the range of 2:1 to 3: 1.
8. The use of the rare earth element-doped hafnium-based binary oxide thin film prepared by the method according to any one of claims 1 to 7 in a graphene field effect transistor.
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| CN104716191A (en) * | 2015-03-24 | 2015-06-17 | 中国科学院上海微系统与信息技术研究所 | Double-gate and double-pole graphene field effect transistor and manufacturing method thereof |
| CN110534579A (en) * | 2019-09-05 | 2019-12-03 | 电子科技大学 | A kind of graphene-based heterojunction field effect transistor, preparation method and its integrated circuit |
| CN113078112A (en) * | 2021-03-29 | 2021-07-06 | 电子科技大学 | Preparation method of oxide-based depletion type load inverter |
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