CN114696780A - Single crystal acoustic wave resonator, filter, and electronic device - Google Patents
Single crystal acoustic wave resonator, filter, and electronic device Download PDFInfo
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- CN114696780A CN114696780A CN202110586180.6A CN202110586180A CN114696780A CN 114696780 A CN114696780 A CN 114696780A CN 202110586180 A CN202110586180 A CN 202110586180A CN 114696780 A CN114696780 A CN 114696780A
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to a bulk acoustic wave resonator comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a single crystal piezoelectric layer disposed between the bottom electrode and the top electrode, wherein: a support structure is arranged between the lower surface of the piezoelectric layer and the upper surface of the substrate, and the piezoelectric layer and the substrate are arranged in a substantially parallel manner; the non-electrode connection ends of the top and bottom electrodes each have an acute angle structure including a parallel surface parallel to the corresponding surface of the piezoelectric layer, and a slope extending obliquely from the parallel surface away from the piezoelectric layer and forming an acute angle with the parallel surface. The invention also relates to a filter and an electronic device.
Description
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and in particular, to a single crystal acoustic wave resonator, a filter having the resonator, and an electronic device.
Background
Electronic devices have been widely used as basic elements of electronic equipment, and their application range includes mobile phones, automobiles, home electric appliances, and the like. In addition, technologies such as artificial intelligence, internet of things, 5G communication and the like, which will change the world in the future, still need to rely on electronic devices as a foundation.
Film Bulk Acoustic resonators (Film Bulk Acoustic resonators, FBARs for short, also called Bulk Acoustic resonators, BAW) as important members of piezoelectric devices are playing an important role in the field of communications, especially FBAR filters have increasingly large market share in the field of radio frequency filters, FBARs have excellent characteristics of small size, high resonant frequency, high quality factor, large power capacity, good roll-off effect and the like, are gradually replacing traditional Surface Acoustic Wave (SAW) filters and ceramic filters, play a great role in the field of radio frequency of wireless communications, and have the advantage of high sensitivity which can also be applied to the sensing fields of biology, physics, medicine and the like.
The structural main body of the film bulk acoustic resonator is a sandwich structure consisting of a bottom electrode, a piezoelectric film or a piezoelectric layer and a top electrode, namely a layer of piezoelectric material is sandwiched between two metal electrode layers. By inputting a sinusoidal signal between the two electrodes, the FBAR converts the input electrical signal into mechanical resonance using the inverse piezoelectric effect, and converts the mechanical resonance into an electrical signal for output using the piezoelectric effect.
In the traditional bulk acoustic wave resonator, in order to ensure the higher growth quality of the subsequent piezoelectric film, the gradient of the contact part of the edge of the bottom electrode and the piezoelectric film is very slow.
Fig. 1 is a conventional resonator structure, in which 10 is a substrate, 20 is a cavity-type acoustic mirror, 30 is a bottom electrode, 40 is a piezoelectric thin film layer or piezoelectric layer, and 50 is a top electrode. α and β refer to angles formed by the non-electrode connecting ends of the bottom and top electrodes, respectively, with respect to the corresponding surfaces of the piezoelectric layer. For the bottom electrode, the edge of the electrode is taken as a starting point, a line is drawn facing the center direction of the electrode, and the line is rotated clockwise to the edge section of the electrode by taking the edge point of the electrode as a supporting point to form a bottom electrode angle alpha, wherein the angle is usually more than 150 degrees and even reaches 170 degrees. For the top electrode, the line in the same direction is rotated in the counterclockwise direction to the cross section of the electrode edge with the electrode edge as the supporting point to form a top electrode angle β, which is usually between 20 ° and 90 °. The angle difference between the top electrode and the bottom electrode is large, even reaches 150 degrees, and even under the state of small angle deviation, the difference is close to 60 degrees. The asymmetry of the angle deviations of alpha and beta enhances the parasitic modes of the resonator, reducing the Q value of the resonator.
Disclosure of Invention
The present invention has been made to mitigate or solve at least one of the above-mentioned problems in the prior art.
According to an aspect of an embodiment of the present invention, there is provided a bulk acoustic wave resonator including:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode; and
a single crystal piezoelectric layer disposed between the bottom electrode and the top electrode,
wherein:
a support structure is arranged between the lower surface of the piezoelectric layer and the upper surface of the substrate, and the piezoelectric layer and the substrate are arranged in a substantially parallel manner;
the non-electrode connection ends of the top and bottom electrodes each have an acute angle structure including a parallel surface parallel to the corresponding surface of the piezoelectric layer, and a slope extending obliquely from the parallel surface away from the piezoelectric layer and forming an acute angle with the parallel surface.
Embodiments of the present invention also relate to a filter comprising the bulk acoustic wave resonator described above.
Embodiments of the invention also relate to an electronic device comprising a filter as described above or a resonator as described above.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout, and in which:
FIG. 1 is a schematic cross-sectional view of a prior art bulk acoustic wave resonator;
2A-2B are schematic cross-sectional views of bulk acoustic wave resonators according to various exemplary embodiments of the present invention, wherein the electrodes are flat electrodes;
3A-3D are schematic cross-sectional views of bulk acoustic wave resonators according to various exemplary embodiments of the present invention in which the electrodes on one side of the piezoelectric layer are flat electrodes and the non-electrode connecting ends of the electrodes on the other side are provided with bridge structures;
4A-4D are schematic cross-sectional views of bulk acoustic wave resonators according to various exemplary embodiments of the present invention in which the electrodes on one side of the piezoelectric layer are flat electrodes and the non-electrode connecting ends of the electrodes on the other side are provided with a suspended wing structure;
fig. 5A-5C are schematic cross-sectional views of bulk acoustic wave resonators with electrodes on one side of the piezoelectric layer provided with suspended wing structures or bridge structures and electrodes on the other side provided with bridge structures or suspended wing structures according to different exemplary embodiments of the present invention; and
fig. 6A to 6D are schematic cross-sectional views of a bulk acoustic wave resonator according to different exemplary embodiments of the present invention, in which a non-electrode connection end of an electrode on one side of a piezoelectric layer is provided with a suspended wing structure, and a non-electrode connection end of an electrode on the other side is provided with a suspended wing structure, which is arranged in central symmetry.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention. Some, but not all embodiments of the invention are described. All other embodiments that can be derived by one of ordinary skill in the art from the embodiments given herein are intended to be within the scope of the present invention.
The invention provides a structure of a bulk acoustic wave resonator, wherein the top electrode and the bottom electrode of the resonator have smaller angle deviation and are even equal and symmetrical, which is beneficial to weakening the parasitic mode of the resonator, improving the Q value of the resonator and optimizing the performance of the resonator.
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
The reference numerals in the drawings of the present invention are exemplarily illustrated as follows:
10: the substrate is made of silicon, silicon carbide, sapphire, silicon dioxide or other silicon-based materials.
20: the acoustic mirror can be a cavity, and a Bragg reflection layer and other equivalent forms can also be adopted. The embodiment of the invention shown uses a cavity.
25: the material of the supporting layer can be aluminum nitride, silicon carbide, polycrystalline silicon, monocrystalline silicon, silicon dioxide, amorphous silicon, doped silicon dioxide and the like, or the thermal conductivity coefficient of the material of the supporting layer is not less than 0.2W/cm-K.
30: the bottom electrode is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or their composite or their alloy.
40: a single crystal piezoelectric layer, which may be made of single crystal aluminum nitride, single crystal gallium nitride, single crystal lithium niobate, single crystal lead zirconate titanate, single crystal potassium niobate, single crystal quartz film, or single crystal lithium tantalate, and may further include an atomic ratio of rare earth element-doped materials of the above materials, for example, doped aluminum nitride, which contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), and the like.
50: the top electrode is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or their composite or their alloy. The material of the top electrode may be the same as or different from the material of the bottom electrode.
60: an insulating layer serving as an electrical insulator, such as one of silicon dioxide, silicon nitride, silicon carbide, and sapphire, or a material of the insulating layer has a thermal conductivity of not less than 0.2W/cm · K.
The bulk acoustic wave resonators shown in fig. 2A-6D are bulk acoustic wave resonators developed based on POI wafers, in which a variety of different electrode structure forms are shown, including flat electrodes, electrodes containing acoustic interference structures such as suspended wing structures and/or bridge structures, and the like.
As shown, the bulk acoustic wave resonator includes a substrate 10, a support layer or structure 25, a cavity-type acoustic mirror 20, a bottom electrode 30, a piezoelectric single crystal thin film layer or single crystal piezoelectric layer 40, and a top electrode 50. The top and/or bottom electrodes may have a dimension in the horizontal direction that is larger than the cavity (i.e., the non-electrode connecting end of the electrode extends outside the cavity boundary in the horizontal direction) or smaller than the cavity (i.e., the non-electrode connecting end of the electrode is inside the cavity boundary in the horizontal direction), and when the bottom electrode has a dimension larger than the cavity, the edge portion of the non-electrode connecting end of the bottom electrode extends into the support layer or support structure.
In the bulk acoustic wave resonators shown in fig. 2A to 6D, the non-electrode connecting ends of the top electrode 50 and the bottom electrode 30 each have an acute-angled structure including a parallel surface parallel to the corresponding surface of the piezoelectric layer 40, and a slope extending obliquely from the parallel surface away from the piezoelectric layer 40 and forming an acute angle with the parallel surface. For example, referring to fig. 2A, for angle α, the parallel plane is the upper surface of piezoelectric layer 40 or a horizontal plane parallel to the upper surface of piezoelectric layer 40, and the slope plane is a slope plane defining an acute angle α with the parallel plane; for angle β, the parallel plane is the lower surface of piezoelectric layer 40 or a horizontal plane parallel to the lower surface of piezoelectric layer 40, and the slope plane is a slope plane defining an acute angle β with the parallel plane. The above description of angles α and β also applies to angles α and β in other embodiments of the invention.
Since the non-electrode connection ends of the top electrode 50 and the bottom electrode 30 have the acute angle structures, compared with the structure in fig. 1, the angle deviation of the top electrode and the bottom electrode at the non-electrode connection ends can be significantly reduced, which is beneficial to reducing the parasitic mode of the resonator and improving the Q value of the resonator.
In the present invention, the end of the non-electrode connecting end of the top electrode and the bottom electrode of the resonator has an acute angle structure, and the angles are acute angles. The resonator structure can be derived from POI wafer fabrication, wherein the piezoelectric thin film is a piezoelectric single crystal thin film of lithium niobate, lithium tantalate, quartz, or the like. On one hand, the end parts of the non-electrode connecting ends of the top electrode and the bottom electrode are acute angles, further, the difference of the acute angles of the end parts of the non-electrode connecting ends of the top electrode and the bottom electrode (namely the difference between alpha and beta) is less than 70 degrees, further less than 30 degrees, and the electrode non-connecting ends can be mirror-symmetrical and equal in angle about the horizontal bisector of the piezoelectric layer; the electrode edge of the non-connecting end of the electrode is of an approximate mirror symmetry structure, so that the parasitics of the resonator are weakened, the Q value of the resonator is improved, and the performance of the resonator is optimized; on the other hand, the piezoelectric film on the resonator based on the POI wafer is in a straight structure, so that the negative influence of uneven stress between the bent surface and the straight surface of the piezoelectric film on the reliability of the resonator and the filter is effectively eliminated, and the performances of the resonator such as the Q value and the like are also improved.
In one embodiment of the present invention, the acute angles α and β of the non-electrode connecting ends of top electrode 50 and bottom electrode 30 may both be less than 85 degrees, and further, both less than 30 degrees.
Fig. 2A-2B are schematic cross-sectional views of bulk acoustic wave resonators according to various exemplary embodiments of the present invention, wherein the electrodes are flat electrodes.
In fig. 2A, the non-electrode connection ends of the top electrode 50 and the bottom electrode 30 are each located inside the boundary of the acoustic mirror cavity, and accordingly, the non-electrode connection end of the bottom electrode 30 is spaced apart from the support layer 25 in the horizontal direction, while in fig. 2B, the non-electrode connection ends of the bottom electrode 30 are each covered by the support layer. The structure shown in fig. 2A is better in electrode symmetry than the structure shown in fig. 2B. The structure shown in fig. 2B is compared to the structure shown in fig. 2A, since the bottom electrode 30 extends to the supporting layer, this can increase the structural stability of the resonator, and at the same time, the thermal conductivity of the resonator is improved, thereby improving the power capacity. Specifically, the electrode material generally has good thermal conductivity, and the heat generated by the resonator is mainly transferred to the supporting layer 25 through the bottom electrode 30 and then transferred to the substrate 10 for dissipation, and when the heat transfer efficiency is high, the power capacity that the resonator can bear is also high.
Fig. 3A-3D are schematic cross-sectional views of bulk acoustic wave resonators according to various exemplary embodiments of the present invention in which the electrodes on one side of the piezoelectric layer are flat electrodes and the non-electrode connecting ends of the electrodes on the other side are provided with a bridge structure.
In fig. 3A-3D, the bridge electrode edge (i.e., acute angle configuration) angle and the straight electrode edge (i.e., acute angle configuration) angle are both acute angles, and the difference between the angles is less than 70 °, and further less than 30 °, the limiting solution is that the non-connecting edges of the electrodes are mirror symmetric and equal in angle. In addition, an effective area of the electrode is limited between the two bridge structures, and under the condition that the working area of the resonator is not changed, the bridged electrode reduces the leakage of transverse waves and improves the Q value of the resonator; on the other hand, the length or the area of the electrode is increased, so that the electrode is in contact with or close to the supporting layer, the heat dissipation of the resonator is facilitated, and the power capacity of the resonator is improved.
In fig. 3A, it can be seen that the non-electrode connection end of the bottom electrode 30 is provided with a bridge structure, while the top electrode 50 is a flat electrode. In fig. 3A, the edges of the non-electrode connection ends of the top electrode 50 are all located inside the acoustic mirror cavity of the resonator in the horizontal direction row, and the outside of the bridge structure of the bottom electrode 30 is covered by the support layer 25. In fig. 3A, the end edge of the non-electrode connection end of the top electrode 50 is between the inner edge and the outer edge of the bridge structure of the bottom electrode 30 in the horizontal direction.
In fig. 3B, it can be seen that the non-electrode connection end of the bottom electrode 30 is provided with a bridge structure, while the top electrode 50 is a flat electrode. Fig. 3B differs from fig. 3A in that in fig. 3B, the outer side of the bridge structure of the bottom electrode 30 is not covered by the support layer 25, but is spaced apart from the support layer 25 in the horizontal direction.
In fig. 3C, it can be seen that the non-electrode connection end of the top electrode 50 is provided with a bridge structure, while the bottom electrode 30 is a flat electrode. In fig. 3C, the non-electrode connection end of the bottom electrode 30 is covered by the support layer 25. In fig. 3C, the end edge of the non-electrode connection end of the bottom electrode 30 is between the inner edge and the outer edge of the bridge structure of the top electrode 50 in the horizontal direction.
In fig. 3D, it can be seen that the non-connected end of the top electrode 50 is provided with a bridge structure, while the bottom electrode 30 is a flat electrode. Fig. 3D differs from fig. 3C in that in fig. 3D, the non-electrode connection end of the bottom electrode 30 is not covered by the support layer 25, but is spaced apart from the support layer 25 in the horizontal direction.
Fig. 4A-4D are schematic cross-sectional views of bulk acoustic wave resonators according to various exemplary embodiments of the present invention in which the electrode on one side of the piezoelectric layer is a flat electrode and the non-electrode connecting end of the electrode on the other side is provided with a suspended wing structure. Specifically, in fig. 4A-4D, one of the top electrode 50 or the bottom electrode 30 is a flat structure and the non-electrode connection end of the other is provided with a cantilevered wing structure. In addition, the part of the electrode in the effective area is limited between the two suspension wing structures, and the suspension wing structure can reduce the transverse wave leakage and improve the Q value of the resonator under the condition of ensuring that the working area of the resonator is not changed.
In fig. 4A, it can be seen that the non-electrode connection end of the bottom electrode 30 is provided with a cantilevered wing structure, while the top electrode 50 is a flat electrode. In fig. 4A, the edges of the non-electrode connection ends of the top electrode 50 are all inside the acoustic mirror cavity of the resonator in the horizontal direction row, and the suspended wing structure of the bottom electrode 30 is horizontally spaced apart from the support layer 25. In fig. 4A, the end edge of the non-electrode connection end of the top electrode 50 is located inside the boundary of the acoustic mirror in the horizontal direction.
In fig. 4B, it can be seen that the non-electrode connecting end of the bottom electrode 30 is provided with a cantilevered configuration, while the top electrode 50 is a flat electrode. Fig. 4B differs from fig. 4A in that, in fig. 4B, the end edge of the non-electrode connection end of the top electrode 50 is outside the boundary of the acoustic mirror in the horizontal direction.
In fig. 4C, it can be seen that the non-electrode connecting end of the top electrode 50 is provided with a cantilevered wing structure, while the bottom electrode 30 is a flat electrode. In fig. 4C, the non-electrode connection end of the bottom electrode 30 is covered by the support layer 25.
In fig. 4D, it can be seen that the non-connected end of the top electrode 50 is provided with a cantilevered wing structure, while the bottom electrode 30 is a flat electrode. Fig. 4D differs from fig. 4C in that in fig. 4D, the non-electrode connection terminals of the bottom electrodes 30 are not covered by the support layer 25, but are spaced apart from the support layer 25 in the horizontal direction.
Fig. 5A-5C are schematic cross-sectional views of bulk acoustic wave resonators with electrodes on one side of the piezoelectric layer provided with a suspended wing structure or bridge structure and electrodes on the other side provided with a bridge structure or suspended wing structure according to different exemplary embodiments of the present invention.
In fig. 5A-5C, one of the non-electrode connection ends of the top or bottom electrode is provided with a bridge structure and the other is provided with a cantilever structure. The inner overlapping area of the bridge structure or the cantilevered structure of the electrodes defines the working area of the resonator. In addition, the overlap area between the two cantilevered structures and the bridge structure defines the active area of the electrode. By utilizing the electrode synergistic effect of the bridge structure and the suspension wing structure, under the condition of ensuring that the working area of the resonator is not changed, on one hand, the transverse wave leakage is reduced, and the Q value of the resonator is improved; on the other hand, when the length or the area of the electrode provided with the bridge structure is larger, the electrode extends into the supporting layer or is close to the supporting layer, so that the heat dissipation of the resonator is facilitated, and the power capacity of the resonator is improved.
In fig. 5A, it can be seen that the non-electrode connection end of the bottom electrode 30 is provided with a bridge structure, while the non-electrode connection end of the top electrode 50 is provided with a suspended wing structure. In fig. 5A, the outer side of the bridge structure of the non-electrode connection end of the bottom electrode 30 is covered by the support layer 25.
In fig. 5B, it can be seen that the non-electrode connecting end of the top electrode 50 is provided with a bridge structure, while the non-electrode connecting end of the bottom electrode 30 is provided with a suspended wing structure. In fig. 5B, the outer side of the suspended wing structure of the bottom electrode 30 is not covered by the support layer 25, but is spaced apart from the support layer 25 in the horizontal direction. In fig. 5B, the inner side of the suspended wing structure of the non-electrode connection end of the bottom electrode 30 is between the inner side and the outer side of the bridge structure of the top electrode in the horizontal direction.
In fig. 5C, it can be seen that the non-electrode connection end of the bottom electrode 30 is provided with a cantilevered wing structure, while the non-electrode connection end of the top electrode 50 is also provided with a cantilevered wing structure.
Fig. 6A to 6D are schematic cross-sectional views of bulk acoustic wave resonators according to different exemplary embodiments of the present invention, in which non-electrode connection ends of electrodes on one side of a piezoelectric layer are provided with a suspended wing structure, and non-electrode connection ends of electrodes on the other side are provided with a suspended wing structure, which is arranged in central symmetry.
In the invention, the suspension wing structure is in a projection of a centroid, the center of which is the effective area of the resonator, in central symmetry on a horizontal bisection plane of the piezoelectric layer.
The resonators shown in fig. 6A-6D show the electrode connection terminals and the non-electrode connection terminals; wherein, because the electrode connecting end and the non-electrode connecting end are simultaneously processed and formed, the angle of the whole electrode edge can be basically consistent. The non-connecting end of the electrode is provided with a suspension wing structure. At the electrode connection end, the influence of the electrode connection end on the performance of the resonator is reduced through the bridge structure, so that the Q value is improved.
In fig. 6A, the non-electrode connecting ends of the bottom electrode 30 and the top electrode 50 are each provided with a suspended wing structure.
In fig. 6B, unlike the one shown in fig. 6A, the connection end of the top electrode in fig. 6B is also provided with a bridge structure. In fig. 6B, the inner side of the suspended wing structure of the non-electrode connection end of the bottom electrode 30 is between the inner side and the outer side of the bridge structure of the top electrode 50 in the horizontal direction.
In fig. 6C, unlike the one shown in fig. 6A, the connection end of the bottom electrode in fig. 6C is also provided with a bridge structure. In fig. 6C, the inner side of the suspended wing structure of the non-electrode connection end of the top electrode 50 is between the inner side and the outer side of the bridge structure of the bottom electrode 30 in the horizontal direction.
In fig. 6D, unlike the one shown in fig. 6A, the connection end of the bottom electrode and the bottom electrode in fig. 6D is further provided with a bridge structure. In fig. 6D, the inner side of the suspended wing structure of the non-electrode connection end of the top electrode 50 is horizontally between the inner side and the outer side of the bridge structure of the bottom electrode 30, and the inner side of the suspended wing structure of the non-electrode connection end of the bottom electrode 30 is horizontally between the inner side and the outer side of the bridge structure of the top electrode 50.
In a specific embodiment of the present invention, the substrate 10 is a silicon substrate, the support layer 25 is a silicon nitride layer, the piezoelectric layer 40 is a lithium niobate single crystal piezoelectric layer, and the top electrode 50 and the bottom electrode 30 are molybdenum electrodes. By combining the materials, better heat dissipation effect can be obtained.
As shown in the drawings of the present invention, the acoustic mirror 20 is an acoustic mirror cavity. In the drawing, the acoustic mirror cavity is shaped recessed into the support layer 25, and the lower boundary of the acoustic mirror cavity is defined by the support layer 25. The invention is not limited thereto and the lower boundary of the acoustic mirror cavity may also be defined by the substrate 10.
In the illustrated embodiment, the acoustic interference structures, such as the cantilevered structures, the bridge structures, and the protruding/recessed structures, may be combined at the top electrode and/or the bottom electrode, and such combinations based on the acute angle structures of the present invention are also within the scope of the present invention.
It is to be noted that, in the present invention, unless otherwise explicitly indicated, all numerical ranges may include endpoints, and also include medians of all numerical ranges, which are within the scope of the present invention.
In the present invention, the upper and lower are with respect to the bottom surface of the base of the resonator, and with respect to one component, the side thereof close to the bottom surface is the lower side, and the side thereof far from the bottom surface is the upper side.
In the present invention, the inner and outer are in the lateral direction or the radial direction with respect to the center of the effective area (i.e., the effective area center) of the resonator (the overlapping area of the piezoelectric layer, the top electrode, the bottom electrode, and the acoustic mirror in the thickness direction of the resonator constitutes the effective area), the side or end of a member close to the effective area center is the inner side or the inner end, and the side or end of the member away from the effective area center is the outer side or the outer end. For a reference position, being inside of the position means being between the position and the center of the effective area in the lateral or radial direction, and being outside of the position means being further away from the center of the effective area than the position in the lateral or radial direction.
As can be appreciated by those skilled in the art, the bulk acoustic wave resonator according to the present invention may be used to form a filter or an electronic device.
Based on the above, the invention provides the following technical scheme:
1. a bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode; and
a single crystal piezoelectric layer disposed between the bottom electrode and the top electrode,
wherein:
a support structure is arranged between the lower surface of the piezoelectric layer and the upper surface of the substrate, and the piezoelectric layer and the substrate are arranged in a substantially parallel manner;
the non-electrode connection ends of the top and bottom electrodes each have an acute angle structure including a parallel surface parallel to the corresponding surface of the piezoelectric layer, and a slope extending obliquely from the parallel surface away from the piezoelectric layer and forming an acute angle with the parallel surface.
2. The resonator of claim 1, wherein:
the non-electrode connecting end of the bottom electrode is embedded in the supporting layer, and the bottom electrode embedded in the supporting layer is respectively contacted with the piezoelectric layer and the supporting layer surface in the vertical direction parallel to the thickness direction of the resonator.
3. The resonator of claim 1, wherein:
the non-electrode connection end of the bottom electrode is spaced apart from the support layer in the horizontal direction.
4. The resonator of claim 1, wherein:
the acute angle is less than 85 degrees.
5. The resonator of claim 4, wherein:
the acute angle is less than 30 degrees.
6. The resonator of claim 1, wherein:
the non-electrode connecting ends of the top electrode and the bottom electrode are all the same in acute angle with an acute angle structure.
7. The resonator of claim 1, wherein:
the piezoelectric layer is made of single crystal aluminum nitride, single crystal gallium nitride, single crystal lithium niobate, single crystal potassium niobate, single crystal quartz film or single crystal lithium tantalate; and/or
The material of the support structure is selected from one of aluminum nitride, silicon carbide, polycrystalline silicon, monocrystalline silicon, silicon dioxide, amorphous silicon and doped silicon dioxide, or the thermal conductivity coefficient of the material of the support structure is not less than 0.2W/cm-K.
8. The resonator of claim 1, wherein:
the top electrode and/or the bottom electrode are flat electrodes; or
One of the top electrode and the bottom electrode is a straight electrode, the non-electrode connecting end of the other of the top electrode and the bottom electrode is provided with a bridge structure, the outer part of the bridge structure is provided with the acute angle structure, or the electrode connecting end of the other of the top electrode and the bottom electrode is provided with a bridge structure;
one of the top electrode and the bottom electrode is a straight electrode, the non-electrode connecting end of the other of the top electrode and the bottom electrode is provided with a suspension wing structure, and the outer side part of the suspension wing structure is provided with the acute angle structure;
the non-electrode connecting end of the top electrode and the bottom electrode is provided with a bridge structure, and the outer part of the bridge structure is provided with the acute angle structure; or
The non-electrode connecting end of the top electrode and the bottom electrode is provided with a suspension wing structure, and the outer part of the suspension wing structure is provided with the acute angle structure; or
The non-electrode connecting end of one of the top electrode and the bottom electrode is provided with a suspension wing structure, the outer side part of the suspension wing structure is provided with the acute angle structure, the non-electrode connecting end of the other one of the top electrode and the bottom electrode is provided with a bridge structure, and the outer side part of the bridge structure is provided with the acute angle structure; or
And the non-electrode connecting end of the top electrode and/or the bottom electrode is/are provided with a convex and/or concave structure, and the outer part of the convex and/or concave structure is/are provided with the acute angle structure.
9. The resonator of claim 1, wherein:
the acoustic mirror is an acoustic mirror cavity.
10. The resonator of claim 9, wherein:
the acoustic mirror cavity is shaped to be recessed into the support layer, and a lower boundary of the acoustic mirror cavity is defined by the support layer; or
The lower boundary of the acoustic mirror cavity is defined by the substrate.
11. The resonator of any of claims 1-10, wherein:
at least a part of the non-electrode connecting ends of the top and bottom electrodes in the circumferential direction is arranged vertically symmetrically with respect to a horizontal bisector of the piezoelectric layer perpendicular to the thickness direction of the piezoelectric layer.
12. The resonator of any of claims 1-10, wherein:
at least a part of the non-electrode connecting ends of the top and bottom electrodes in the circumferential direction is symmetrical with respect to the center of the effective area of the resonator.
13. The resonator of claim 12, wherein:
the electrode connection ends of the top and bottom electrodes are symmetrical with respect to the center of the active area of the resonator.
14. The resonator of any one of claims 1-13, wherein:
the superposition area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator forms the effective area of the resonator;
outside the active area, at least a portion of an upper surface of the piezoelectric layer is provided with an insulating layer.
15. The resonator of claim 14, wherein:
the insulating layer is at least arranged between the lower surface of the top electrode and the upper surface of the piezoelectric layer in an area corresponding to the part of the top electrode outside the effective area;
the material of the insulating layer is selected from one of silicon dioxide, silicon nitride, silicon carbide and sapphire, or the thermal conductivity coefficient of the material of the insulating layer is not less than 0.2W/cm K.
16. The resonator of any one of claims 1-13, wherein:
the difference between the acute angles of the acute angle structures of the non-electrode connection ends of the top and bottom electrodes is within 70 degrees.
17. The resonator of claim 16, wherein:
the difference between the acute angles of the acute angle structures of the non-electrode connection ends of the top and bottom electrodes is within 30 degrees.
18. A filter comprising a bulk acoustic wave resonator according to any one of claims 1-17.
19. An electronic device comprising the filter of 18 or the bulk acoustic wave resonator of any one of claims 1-17.
The electronic device comprises but is not limited to intermediate products such as a radio frequency front end and a filtering amplification module, and terminal products such as a mobile phone, WIFI and an unmanned aerial vehicle.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (19)
1. A bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode; and
a single crystal piezoelectric layer disposed between the bottom electrode and the top electrode,
wherein:
a support structure is arranged between the lower surface of the piezoelectric layer and the upper surface of the substrate, and the piezoelectric layer and the substrate are arranged in a substantially parallel manner;
the non-electrode connection ends of the top and bottom electrodes each have an acute angle structure including a parallel surface parallel to the corresponding surface of the piezoelectric layer, and a slope extending obliquely from the parallel surface away from the piezoelectric layer and forming an acute angle with the parallel surface.
2. The resonator of claim 1, wherein:
the non-electrode connecting end of the bottom electrode is embedded in the supporting layer, and the bottom electrode embedded in the supporting layer is respectively contacted with the piezoelectric layer and the supporting layer surface in the vertical direction parallel to the thickness direction of the resonator.
3. The resonator of claim 1, wherein:
the non-electrode connection end of the bottom electrode is spaced apart from the support layer in the horizontal direction.
4. The resonator of claim 1, wherein:
the acute angle is less than 85 degrees.
5. The resonator of claim 4, wherein:
the acute angle is less than 30 degrees.
6. The resonator of claim 1, wherein:
the non-electrode connecting ends of the top electrode and the bottom electrode are all the same in acute angle with an acute angle structure.
7. The resonator of claim 1, wherein:
the piezoelectric layer is made of single crystal aluminum nitride, single crystal gallium nitride, single crystal lithium niobate, single crystal potassium niobate, single crystal quartz film or single crystal lithium tantalate; and/or
The material of the supporting structure is selected from one of aluminum nitride, silicon carbide, polycrystalline silicon, monocrystalline silicon, silicon dioxide, amorphous silicon and doped silicon dioxide, or the thermal conductivity coefficient of the material of the supporting structure is not less than 0.2W/cm K.
8. The resonator of claim 1, wherein:
the top electrode and/or the bottom electrode are flat electrodes; or
One of the top electrode and the bottom electrode is a straight electrode, the non-electrode connecting end of the other of the top electrode and the bottom electrode is provided with a bridge structure, the outer part of the bridge structure is provided with the acute angle structure, or the electrode connecting end of the other of the top electrode and the bottom electrode is provided with a bridge structure;
one of the top electrode and the bottom electrode is a straight electrode, the non-electrode connecting end of the other of the top electrode and the bottom electrode is provided with a suspension wing structure, and the outer side part of the suspension wing structure is provided with the acute angle structure;
the non-electrode connecting end of the top electrode and the bottom electrode is provided with a bridge structure, and the outer part of the bridge structure is provided with the acute angle structure; or
The non-electrode connecting end of the top electrode and the bottom electrode is provided with a suspension wing structure, and the outer part of the suspension wing structure is provided with the acute angle structure; or
The non-electrode connecting end of one of the top electrode and the bottom electrode is provided with a suspension wing structure, the outer side part of the suspension wing structure is provided with the acute angle structure, the non-electrode connecting end of the other one of the top electrode and the bottom electrode is provided with a bridge structure, and the outer side part of the bridge structure is provided with the acute angle structure; or
And the non-electrode connecting end of the top electrode and/or the bottom electrode is/are provided with a convex and/or concave structure, and the outer part of the convex and/or concave structure is/are provided with the acute angle structure.
9. The resonator of claim 1, wherein:
the acoustic mirror is an acoustic mirror cavity.
10. The resonator of claim 9, wherein:
the acoustic mirror cavity is shaped to be recessed into the support layer, and a lower boundary of the acoustic mirror cavity is defined by the support layer; or
A lower boundary of the acoustic mirror cavity is defined by the substrate.
11. The resonator of any of claims 1-10, wherein:
at least a part of the non-electrode connecting ends of the top and bottom electrodes in the circumferential direction is arranged vertically symmetrically with respect to a horizontal bisector of the piezoelectric layer perpendicular to the thickness direction of the piezoelectric layer.
12. The resonator of any of claims 1-10, wherein:
at least a part of the non-electrode connection ends of the top and bottom electrodes in the circumferential direction is symmetrical with respect to the center of the effective area of the resonator.
13. The resonator of claim 12, wherein:
the electrode connection ends of the top and bottom electrodes are symmetrical with respect to the center of the active area of the resonator.
14. The resonator of any of claims 1-13, wherein:
the superposition area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator forms the effective area of the resonator;
outside the active area, at least a portion of an upper surface of the piezoelectric layer is provided with an insulating layer.
15. The resonator of claim 14, wherein:
the insulating layer is at least arranged between the lower surface of the top electrode and the upper surface of the piezoelectric layer in an area corresponding to the part of the top electrode outside the effective area;
the material of the insulating layer is selected from one of silicon dioxide, silicon nitride, silicon carbide and sapphire, or the thermal conductivity coefficient of the material of the insulating layer is not less than 0.2W/cm K.
16. The resonator of any of claims 1-13, wherein:
the difference between the acute angles of the acute angle structures of the non-electrode connection ends of the top and bottom electrodes is within 70 degrees.
17. The resonator of claim 16, wherein:
the difference between the acute angles of the acute angle structures of the non-electrode connection ends of the top and bottom electrodes is within 30 degrees.
18. A filter comprising the bulk acoustic wave resonator according to any one of claims 1-17.
19. An electronic device comprising a filter according to claim 18, or a bulk acoustic wave resonator according to any of claims 1-17.
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