CN114696774A - Single crystal acoustic wave resonator, filter, and electronic device - Google Patents
Single crystal acoustic wave resonator, filter, and electronic device Download PDFInfo
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to a bulk acoustic wave resonator comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a single crystal piezoelectric layer disposed between the bottom electrode and the top electrode, wherein: a support structure is arranged between the lower surface of the piezoelectric layer and the upper surface of the substrate, and the piezoelectric layer and the substrate are arranged in a substantially parallel manner; the bottom electrode and/or the top electrode are/is a gap electrode, the gap electrode is provided with at least one gap layer, and the gap layer and the top surface and the bottom surface of the gap electrode have a distance in the thickness direction of the gap electrode; and the support structure comprises a recess in which the bottom electrode is disposed. The invention also relates to a filter and an electronic device.
Description
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and in particular, to a single crystal acoustic wave resonator, a filter having the same, and an electronic device.
Background
Electronic devices have been widely used as basic elements of electronic equipment, and their application range includes mobile phones, automobiles, home electric appliances, and the like. In addition, technologies such as artificial intelligence, internet of things, 5G communication and the like which will change the world in the future still need to rely on electronic devices as a foundation.
Film Bulk Acoustic Resonator (FBAR, also called Bulk Acoustic Resonator, BAW for short) is playing an important role in the communication field as an important member of piezoelectric devices, especially FBAR filters have increasingly large market share in the field of radio frequency filters, FBARs have excellent characteristics of small size, high resonance frequency, high quality factor, large power capacity, good roll-off effect and the like, the filters gradually replace traditional Surface Acoustic Wave (SAW) filters and ceramic filters, play a great role in the radio frequency field of wireless communication, and the advantage of high sensitivity can also be applied to the sensing fields of biology, physics, medicine and the like.
The structural main body of the film bulk acoustic resonator is a sandwich structure consisting of a bottom electrode, a piezoelectric film or a piezoelectric layer and a top electrode, namely a layer of piezoelectric material is sandwiched between two metal electrode layers. By inputting a sinusoidal signal between the two electrodes, the FBAR converts the input electrical signal into mechanical resonance using the inverse piezoelectric effect, and converts the mechanical resonance into an electrical signal for output using the piezoelectric effect.
In a traditional film bulk acoustic resonator, a piezoelectric layer is generally deposited on a structured bottom electrode by adopting a semiconductor film deposition process (such as a sputtering process), and the piezoelectric film is not a straight structure and has larger stress; in addition, the piezoelectric film obtained by deposition is in a polycrystalline crystal structure, wherein the crystal structure at the bent part is greatly different from that at the straight part, so that the electromechanical coupling and the uniformity of the heat transfer performance of the piezoelectric film are influenced; in order to obtain a piezoelectric film with relatively good performance, very strict requirements are put on the appearance structure of the bottom electrode, for example, the edge of the electrode has a slope as gentle as possible, and the angle is usually between 10 and 20 degrees, which causes great difficulty in processing; it is also nearly impossible to fabricate interfering structures (e.g., wings, bridges, etc.) on the bottom electrode to improve the performance of the resonator. These factors limit the performance of conventional bulk acoustic wave resonators based on the process of growing piezoelectric thin films.
In addition, the rapid development of communication technology requires that the working frequency of the filter is continuously increased, and the high working frequency means that the film thickness, especially the film thickness of the electrode, is further reduced; however, the main adverse effect of the reduction of the thickness of the electrode film is the reduction of the Q value of the resonator caused by the increase of the electrical loss, especially the reduction of the Q value at the series resonance point and the vicinity of the frequency thereof; accordingly, the performance of the high operating frequency bulk acoustic wave filter also deteriorates significantly as the Q value of the bulk acoustic wave resonator decreases.
Disclosure of Invention
The present invention has been made to mitigate or solve at least one of the above-mentioned problems in the prior art.
According to an aspect of an embodiment of the present invention, there is provided a bulk acoustic wave resonator including:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode; and
a single crystal piezoelectric layer disposed between the bottom electrode and the top electrode,
wherein:
a support structure is arranged between the lower surface of the piezoelectric layer and the upper surface of the substrate, and the piezoelectric layer and the substrate are arranged in a substantially parallel manner;
the bottom electrode and/or the top electrode are gap electrodes, each gap electrode is provided with at least one gap layer, and the gap layers are spaced from the top surface and the bottom surface of each gap electrode in the thickness direction of each gap electrode; and is
The support structure includes a recess in which the bottom electrode is disposed.
Embodiments of the present invention also relate to a filter comprising the bulk acoustic wave resonator described above.
Embodiments of the invention also relate to an electronic device comprising a filter as described above or a resonator as described above.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout, and in which:
fig. 1A to 1C are a schematic top view, a schematic cross-sectional view along the line AA 'in fig. 1A, and a schematic cross-sectional view along the line BB' in fig. 1A, respectively, of a bulk acoustic wave resonator according to a first exemplary embodiment of the present invention;
2A-2C are schematic top views, schematic cross-sectional views along line AA 'in FIG. 2A, and schematic cross-sectional views along line BB' in FIG. 2A of a bulk acoustic wave resonator according to a second exemplary embodiment of the present invention;
fig. 3A-3C are schematic top views, schematic cross-sectional views along line AA 'in fig. 3A, and schematic cross-sectional views along line BB' in fig. 3A of a bulk acoustic wave resonator according to a third exemplary embodiment of the present invention;
fig. 4A-4C are schematic top views, schematic cross-sectional views along the line AA 'in fig. 4A, and schematic cross-sectional views along the line BB' in fig. 4A of a bulk acoustic wave resonator according to a fourth exemplary embodiment of the present invention;
fig. 5A-5C are schematic top views, schematic cross-sectional views along line AA 'in fig. 5A, and schematic cross-sectional views along line BB' in fig. 5A of a bulk acoustic wave resonator according to a fifth exemplary embodiment of the present invention;
fig. 6A-6C are schematic top views, schematic cross-sectional views along line AA 'in fig. 6A, and schematic cross-sectional views along line BB' in fig. 6A of a bulk acoustic wave resonator according to a sixth exemplary embodiment of the present invention;
fig. 7A to 7C are schematic top views, schematic cross-sectional views along line AA 'in fig. 7A, and schematic cross-sectional views along line BB' in fig. 7A of a bulk acoustic wave resonator according to a seventh exemplary embodiment of the present invention;
fig. 8A-8C are schematic top views, schematic cross-sectional views along line AA 'in fig. 8A, and schematic cross-sectional views along line BB' in fig. 8A of a bulk acoustic wave resonator according to an eighth exemplary embodiment of the present invention;
fig. 9A to 9C are a schematic top view, a schematic cross-sectional view along line AA 'in fig. 9A, and a schematic cross-sectional view along line BB' in fig. 9A of a bulk acoustic wave resonator according to a ninth exemplary embodiment of the present invention;
fig. 10A to 10C are a schematic top view, a schematic cross-sectional view along line AA 'in fig. 10A, and a schematic cross-sectional view along line BB' in fig. 10A of a bulk acoustic wave resonator according to a tenth exemplary embodiment of the present invention, in which an insulating layer is shown.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention. Some, but not all embodiments of the invention are described. All other embodiments, which can be derived from the embodiments of the present invention by a person skilled in the art, are within the scope of the present invention.
The present invention proposes a bulk acoustic wave resonator structure fabricated via a POI (single crystal piezoelectric layer on Insulator) substrate. The POI substrate includes an auxiliary substrate, a single crystal piezoelectric layer, and an insulating layer disposed between the single crystal piezoelectric layer and the auxiliary substrate. The bottom electrode and/or the top electrode of the bulk acoustic wave resonator according to the present invention is a gap electrode or a hollow electrode, the gap electrode has a gap layer provided between a first electrode layer and a second electrode layer, and the first electrode layer and the second electrode layer are electrically connected to each other, which results in an improvement in the electrical conductivity of the entire gap electrode. By providing the gap electrode, the electrical and acoustic properties of the resonator can be improved.
In addition, compared with the traditional resonator, the bulk acoustic wave resonator manufactured by the POI substrate has the advantages that the electrode structures on the two sides of the piezoelectric layer do not influence the intrinsic performance of the piezoelectric layer, so that the electrode structure design is favorable for diversification of the electrode structure, and the comprehensive performance of the resonator is favorably improved.
Embodiments of the present invention will be specifically described below with reference to fig. 1A to 1C through fig. 9A to 9C.
The reference numerals in the drawings of the present invention are exemplarily illustrated as follows:
100: the substrate is made of silicon, silicon carbide, sapphire, silicon dioxide or other silicon-based materials.
110: and the supporting layer or the supporting structure can be made of aluminum nitride, silicon nitride, polycrystalline silicon, silicon dioxide, amorphous silicon, boron-doped silicon dioxide, other silicon-based materials and the like.
112: a cavity.
120: a single crystal piezoelectric layer, which may be made of single crystal aluminum nitride, single crystal gallium nitride, single crystal lithium niobate, single crystal lead zirconate titanate, single crystal potassium niobate, single crystal quartz film, or single crystal lithium tantalate, and may further include an atomic ratio of rare earth element-doped materials of the above materials, for example, doped aluminum nitride, which contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), and the like.
122: a release hole for releasing the sacrificial layer material in the acoustic mirror cavity.
130: the bottom electrode is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or their composite or their alloy.
1301: the first bottom electrode layer is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or an alloy thereof.
1302: the second bottom electrode layer is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or an alloy thereof. The second bottom electrode layer and the first bottom electrode layer may be made of the same material or different materials.
1305: the gap layer in the bottom electrode can be a gap layer, or a vacuum layer, or a gap layer filled with other gaseous media.
140: the top electrode is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or their composite or their alloy. The material of the top electrode may be the same as or different from the material of the bottom electrode.
1401: the first top electrode layer is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or an alloy thereof. The first bottom electrode layer and the first top electrode layer may be referred to as a first electrode layer.
1402: the second top electrode layer is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or an alloy thereof. The second top electrode layer and the first top electrode layer may be made of the same material or different materials. The second bottom electrode layer and the second top electrode layer may be referred to as a second electrode layer.
1403: the space defined by the cantilevered structure.
1404: a cantilevered wing structure.
1405: the gap layer in the top electrode can be a gap layer, or a vacuum layer, or a gap layer filled with other gaseous media.
150: and an insulating layer serving as an electrical insulator, such as one of silicon dioxide, silicon nitride, silicon carbide, and sapphire, or a material of the insulating layer has a thermal conductivity of not less than 0.2W/cm · K.
The electrode material is generally good in thermal conductivity, and the heat generated by the resonator is mainly transferred to the support layer 110 through the bottom electrode 130 and then transferred to the substrate 100 to be dissipated. When the heat transfer efficiency is high, the power capacity that the resonator can withstand is also high. Thus, in the present invention, the heat conduction is optimized by arranging the positions of the top and bottom electrodes.
Fig. 1A to 1C are a schematic top view, a schematic cross-sectional view along line AA 'in fig. 1A, and a schematic cross-sectional view along line BB' in fig. 1A, respectively, of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
As shown in fig. 1A-1C, the piezoelectric layer 120 is a single crystal piezoelectric layer, the support layer 110 is disposed between the lower surface of the piezoelectric layer 120 and the upper surface of the base 100, and the piezoelectric layer 120 is disposed substantially parallel to the base 100. Further, as shown, the support layer includes a recess in which the bottom electrode is disposed.
As shown in fig. 1A to 1C, the top electrode is an interstitial electrode including a first top electrode layer 1401 and a second top electrode layer 1402, and an interstitial layer 1405 disposed between the two electrode layers; the bottom electrode is also a gap electrode comprising a first bottom electrode layer 1301 and a second bottom electrode layer 1302 and a gap layer 1305 arranged between the two electrode layers. In fig. 1A-1C, a first bottom electrode layer 1301 and a first top electrode layer 1401 are in surface contact with the lower and upper surfaces of the piezoelectric layer, respectively.
Although in the illustrated embodiment, there is only one gap layer per gap electrode, a plurality of gap layers stacked in the thickness direction of the resonator may be provided.
When the resonator shown in fig. 1A-1C works, an alternating electric field is applied to the piezoelectric layer 120 through the electrodes, and since the acoustoelectric energy is coupled and transformed, a current flows through the electrodes, and since the top electrode and the bottom electrode of the present embodiment both have a double-layer electrode parallel structure, the electrical loss of the resonator can be effectively reduced.
When excited by the alternating electric field, the piezoelectric layer generates acoustic waves, and when the acoustic waves propagate in both the up and down directions to the interface between the first electrode layer 1301/1401 and the interstitial layer 1305/1405 located in the top and bottom electrodes, the acoustic wave energy is reflected back to the piezoelectric layer 120 (because the acoustic impedance mismatch between air and the electrodes is very large) and does not enter the second electrode layer 1302/1402.
The electrode structure including the air gap layer in the present invention can significantly reduce the electrical loss of the resonator (which is represented by an increase in Q value at and near the series resonant frequency), and the air gap has an acoustic isolation effect on the second electrode layer 1302/1402 of the top electrode and the bottom electrode, so as to substantially avoid negative effects (such as changes in resonant frequency and electromechanical coupling coefficient) on the resonator performance caused by the second electrode layer 1302/1402.
The height of the interstitial layer, which in one embodiment of the invention is at a height above the typical amplitude of the resonator (about 10nm), may be chosen to be greater than
This facilitates the decoupling of the acoustic energy of the second electrode layer 1302/1402 from the resonant cavity (in this embodiment, the composite structure of the first bottom electrode layer 1301, the piezoelectric layer 120, and the first top electrode layer 1401) during high power operation of the resonator.
Fig. 2A-2C are schematic top views, schematic cross-sectional views along line AA 'in fig. 2A, and schematic cross-sectional views along line BB' in fig. 2A, respectively, of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, in which the top electrode is an interstitial electrode and the bottom electrode 130 is not an interstitial electrode. Fig. 3A-3C are schematic top views, schematic cross-sectional views along line AA 'in fig. 3A, and schematic cross-sectional views along line BB' in fig. 3A, respectively, of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, in which the bottom electrode is a gap electrode and the top electrode 140 is not a gap electrode.
As can be appreciated, the benefits and advantages of using a gap electrode as described in connection with fig. 1A-1C apply to the structures shown in fig. 2A-2C and 3A-3C, as long as a gap electrode is provided.
In the above embodiment, the support layer 110 is provided with a recess in which the bottom electrode is provided, and in the case where the bottom electrode is a gap electrode, the upper and lower sides of the second bottom electrode layer 1302 are the gap layer 1305 and the cavity which is a part of the recess, respectively. However, it is also possible to provide no cavity, such an embodiment being shown in fig. 4A-4C.
Fig. 4A-4C are schematic top views, schematic cross-sectional views along line AA 'in fig. 4A, and schematic cross-sectional views along line BB' in fig. 4A, respectively, of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein both the top and bottom electrodes are gap electrodes. As can be appreciated, in fig. 4A-4C, the top electrode may also not be a gap electrode.
As shown in fig. 4B, the second bottom electrode layer 1302 covers the bottom of the recess, in other words, no cavity is present on the lower side of the second bottom electrode layer 1302. At this time, the void layer 1305 itself in the bottom electrode functions as an acoustic mirror of the resonator, and an overlapping region of the top electrode (the first top electrode layer in the case of the void electrode), the first bottom electrode layer 1301, the piezoelectric layer 120, and the void layer 1305 in the thickness direction of the resonator constitutes an effective region of the resonator.
Fig. 5A-5C are schematic top views, schematic cross-sectional views along line AA 'in fig. 5A, and schematic cross-sectional views along line BB' in fig. 5A, respectively, of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein both the top and bottom electrodes are gap electrodes. As can be appreciated, in fig. 5A-5C, only one of the top and bottom electrodes may be a gap electrode.
In fig. 5A to 5C, compared to the structure shown in fig. 1A to 1C, there is a difference in that in fig. 5A to 5C, the electrode connection ends of the top electrode and the bottom electrode are provided with the bridge structure, and the non-electrode connection ends are provided with the flap structure. As can be appreciated, only one electrode may be provided with a bridge structure and a cantilever structure.
At the edge connection point of the first electrode layer 1301/1401 and the second electrode layer 1302/1402, acoustic waves can propagate from the first electrode layer 1301/1401 to the second electrode layer 1302/1402, resulting in partial deterioration of the resonator performance. By providing the suspended wing structure at the non-connection end of the electrode and the bridge structure at the connection end of the electrode, the second electrode layer 1302/1402 can be isolated from the acoustic coupling layer to improve the acoustic performance of the resonator including the Q-value.
Fig. 6A-6C are schematic top views, cross-sectional schematic views along line AA 'in fig. 6A, and cross-sectional schematic views along line BB' in fig. 6A, respectively, of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein the top and bottom electrodes are both interstitial electrodes. As can be appreciated, in fig. 6A-6C, the bottom electrode may not be a gap electrode, but may also take the configuration shown in fig. 4A-4C.
In fig. 6A to 6C, compared with the structure shown in fig. 1A to 1C, there is a difference in that in fig. 6A to 6C, the non-electrode connecting end of the top electrode is provided with a suspended wing structure. The provision of the cantilevered wing structure facilitates isolating the second electrode layer 1402 from the acoustic coupling layer to improve the acoustic performance of the resonator including the Q-value.
Fig. 7A-7C are schematic top views, schematic cross-sectional views along line AA 'in fig. 7A, and schematic cross-sectional views along line BB' in fig. 7A, respectively, of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein both the top and bottom electrodes are gap electrodes. As can be appreciated, in fig. 7A-7C, the bottom electrode may not be a gap electrode, but may also adopt the structure shown in fig. 4A-4C.
In fig. 7A to 7C, compared with the structure shown in fig. 6A to 6C, there is a difference in that in fig. 7A to 7C, the electrode connection end of the top electrode is further provided with a bridge structure. The bridge structure and the suspension wing structure are provided to isolate the second electrode layer 1402 from the acoustic coupling layer, so as to improve the acoustic performance of the resonator including the Q value.
Fig. 8A-8C are schematic top views, schematic cross-sectional views along line AA 'in fig. 8A, and schematic cross-sectional views along line BB' in fig. 8A, respectively, of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, in which both the top and bottom electrodes are gap electrodes.
In fig. 8A to 8C, compared with the structure shown in fig. 1A to 1C, the difference is that in fig. 8A to 8C, the non-electrode connecting end of the bottom electrode is also provided with a suspended wing structure. The provision of the suspended wing structure facilitates isolation of the second electrode layer 1302/1402 from the acoustic coupling layer to improve the acoustic performance of the resonator including the Q-value.
Fig. 9A-9C are schematic top views, cross-sectional schematic views along line AA 'in fig. 9A, and cross-sectional schematic views along line BB' in fig. 9A, respectively, of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein the top and bottom electrodes are both interstitial electrodes.
In fig. 9A-9C, the difference compared to the structure shown in fig. 8A-8C is that in fig. 9A-9C, the bottom of the support layer is flat. When the bottom electrode is an electrode having an interference structure such as a cantilever or a bridge structure, the deposited sacrificial layer material is polished flat before the support layer material is deposited, and the bottom surface of the cavity 112 is flat after the sacrificial layer material is released, as shown in fig. 9B. If not ground flat, a stepped bottom surface of the cavity 112 as shown in FIGS. 5B and 8B will result.
In the present invention, the symmetry of the electrodes on both the top and bottom sides of the piezoelectric layer can also be considered.
In one embodiment, both the bottom and top electrodes are gap electrodes, and the first top electrode layer 1401 and the first bottom electrode layer 1301 are the same thickness.
In a further alternative embodiment, the bottom and top electrodes are both gap electrodes, the first top electrode layer 1401 and the first bottom electrode layer 1301 have the same thickness, and the second top electrode layer 1402 and the second bottom electrode layer 1302 have the same thickness.
In an alternative embodiment, the bottom and top electrodes are both gap electrodes, arranged centrally symmetrically with respect to each other in a cross-section parallel to the thickness direction of the resonator and simultaneously through the electrode connections of the top and bottom electrodes, see for example fig. 1B, 4B, 5B, 8B, 9B.
In an alternative embodiment of the invention, the thickness of the first electrode layer is smaller than the thickness of the second electrode layer in the gap electrode, which not only corresponds to high operating frequency requirements (small thickness of the first electrode layer), but also contributes to improved conductivity of the electrode (large thickness of the second electrode layer).
Further, for example, in the embodiment shown in fig. 1A to 1C, the non-electrode connection ends of the bottom electrodes are embedded in the support layer 110, and the bottom electrodes embedded in the support layer are in surface contact with the piezoelectric layer 120 and the support layer 110, respectively, in the up-down direction parallel to the thickness direction of the resonator. With the structure of fig. 1A-1C, heat generated from the resonator can be efficiently transferred to the supporting layer 110 and the substrate 100, so as to improve the power capacity of the resonator.
In the present invention, a bulk acoustic wave resonator is fabricated based on a POI substrate. In the transfer processing process of the resonator, the insulating layer can better protect the single crystal piezoelectric film (namely the single crystal piezoelectric layer), so that the damage to the single crystal piezoelectric film in the subsequent process of removing the auxiliary substrate can be reduced or even avoided, the surface damage to the piezoelectric film is reduced or even avoided, and the bulk acoustic wave resonator with excellent performance is obtained. In addition, the existence of the insulating layer is also beneficial to diversification of an auxiliary substrate removing scheme, and the device processing technology is simplified.
Fig. 10A-10C are schematic top views, schematic cross-sectional views along line AA 'in fig. 10A, and schematic cross-sectional views along line BB' in fig. 10A of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, showing that at least a portion of the upper surface of the piezoelectric layer is provided with an insulating layer 150 (which is a portion of the insulating layer of POI). As shown in fig. 10A-10C, in a more specific embodiment, an insulating layer 150 is disposed at least between the top electrode 140 and the piezoelectric layer 120 in an area corresponding to a portion of the top electrode 140 outside the active area.
In order to facilitate heat conduction, the material of the insulating layer 150 is selected from one of silicon dioxide, silicon nitride, silicon carbide and sapphire, or the thermal conductivity of the material of the insulating layer is not less than 0.2W/cm-K.
In the present invention, for example, referring to fig. 1A to 1C and the like, when the top electrode or the bottom electrode is a gap electrode, the gap electrode includes a first electrode layer and a second electrode layer which are stacked in the thickness direction of the resonator and connected in parallel to each other, and further, the lower surface and the upper surface of the piezoelectric layer 120, and the first electrode layer and the second electrode layer have portions which are both parallel to each other in the active region of the resonator.
In the present invention, the effective region of the resonator means a region constituted by an overlapping region of the piezoelectric layer, the top electrode, the bottom electrode, and the acoustic mirror in the thickness direction of the resonator.
In a further embodiment, the top and bottom electrodes are both gap electrodes, and the portions of the top and bottom electrodes within the active area are symmetrically arranged about the active area center of the resonator. Here, the effective area center of the resonator means: a centroid of the effective area in a plan view of the effective area and a point on a bisector of the piezoelectric layer in a thickness direction of the piezoelectric layer. The resonator structure arrangement with the top electrode and the bottom electrode being symmetrical is beneficial to weakening the parasitic mode of the resonator, improving the Q value of the resonator and optimizing the performance of the resonator.
It is to be noted that, in the present invention, each numerical range, except when explicitly indicated as not including the end points, can be either the end points or the median of each numerical range, and all fall within the scope of the present invention.
In the present invention, the upper and lower are with respect to the bottom surface of the base of the resonator, and with respect to one component, the side thereof close to the bottom surface is the lower side, and the side thereof far from the bottom surface is the upper side.
In the present invention, the inner and outer are in the lateral direction or the radial direction with respect to the center of the effective area of the resonator, and one side or one end of one member close to the center of the effective area is the inner side or the inner end, and one side or one end of the member away from the center of the effective area is the outer side or the outer end. For a reference position, being inside of the position means being between the position and the center of the effective area in the lateral or radial direction, and being outside of the position means being further away from the center of the effective area than the position in the lateral or radial direction.
As can be appreciated by those skilled in the art, the bulk acoustic wave resonator according to the present invention may be used to form a filter or an electronic device.
Based on the above, the invention provides the following technical scheme:
1. a bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode; and
a single crystal piezoelectric layer disposed between the bottom electrode and the top electrode,
wherein:
a support structure is arranged between the lower surface of the piezoelectric layer and the upper surface of the substrate, and the piezoelectric layer and the substrate are arranged in a substantially parallel manner;
the bottom electrode and/or the top electrode are/is a gap electrode, the gap electrode is provided with at least one gap layer, and the gap layer and the top surface and the bottom surface of the gap electrode have a distance in the thickness direction of the gap electrode; and is
The support structure includes a recess in which the bottom electrode is disposed.
2. The resonator of claim 1, wherein:
the gap electrode has a gap layer.
3. The resonator of claim 2, wherein:
the gap electrode includes a first electrode layer and a second electrode layer which are stacked in the thickness direction of the resonator and connected in parallel with each other, the gap layer is provided between the first electrode layer and the second electrode layer, and the first electrode layer is in surface contact with the piezoelectric layer.
4. The resonator of claim 3, wherein:
the bottom electrode and the top electrode are both gap electrodes; and is provided with
The thicknesses of the first electrode layers on the upper side and the lower side of the piezoelectric layer are the same.
5. The resonator of claim 4, wherein:
the thicknesses of the second electrode layers on the upper side and the lower side of the piezoelectric layer are the same.
6. The resonator of claim 5, wherein:
the top electrode and the bottom electrode on both upper and lower sides of the piezoelectric layer are arranged in central symmetry with respect to each other in a cross section parallel to a thickness direction of the resonator and passing through electrode connection portions of the top electrode and the bottom electrode at the same time.
7. The resonator of claim 3, wherein:
in the gap electrode, the thickness of the first electrode layer is smaller than that of the second electrode layer.
8. The resonator of claim 3, wherein:
the bottom electrode is a gap electrode, and the gap layer is positioned in the concave part; and is
The void layer in the bottom electrode constitutes the acoustic mirror, wherein: the overlapping area of the top electrode, the first electrode layer of the bottom electrode, the piezoelectric layer and the void layer in the thickness direction of the resonator constitutes an effective area of the resonator.
9. The resonator of claim 8, wherein:
the concave part comprises a cavity, and the upper side and the lower side of the second electrode layer of the bottom electrode are respectively provided with a gap layer and the cavity.
10. The resonator of claim 8, wherein:
the second electrode layer of the bottom electrode covers the bottom of the recess.
11. The resonator of claim 1, wherein:
the thickness of the void layer is within
In the presence of a surfactant.
12. The resonator of claim 1, wherein:
the non-electrode connecting end of the bottom electrode is embedded in the supporting structure, and the bottom electrode embedded in the supporting structure is in surface contact with the piezoelectric layer and the supporting structure respectively in the vertical direction parallel to the thickness direction of the resonator.
13. The resonator of any of claims 1-12, wherein:
the top electrode and/or the bottom electrode are flat electrodes.
14. The resonator of any of claims 1-11, wherein:
the top electrode and/or the bottom electrode are provided with a bridge wing structure comprising a bridge structure and/or a suspension wing structure.
15. The resonator of any of claims 1-14, wherein:
the superposition area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator forms an effective area of the resonator;
outside the active area, at least a portion of an upper surface of the piezoelectric layer is provided with an insulating layer.
16. The resonator of claim 15, wherein:
the insulating layer is at least arranged between the lower surface of the top electrode and the upper surface of the piezoelectric layer in an area corresponding to the part of the top electrode outside the effective area;
the material of the insulating layer is selected from one of silicon dioxide, silicon nitride, silicon carbide and sapphire, or the thermal conductivity coefficient of the material of the insulating layer is not less than 0.2W/cm K.
17. The resonator of claim 1, wherein:
the gap electrode includes a first electrode layer and a second electrode layer which are stacked in a thickness direction of the resonator and connected in parallel with each other;
the lower surface and the upper surface of the piezoelectric layer, and the first electrode layer and the second electrode layer have portions both parallel to each other in an active area of the resonator.
18. The resonator of claim 17, wherein:
the top electrode and the bottom electrode are both gap electrodes; and is provided with
The portions of the top and bottom electrodes within the active area are symmetrically arranged about the center of the active area of the resonator.
19. A filter comprising a bulk acoustic wave resonator according to any one of claims 1-18.
20. An electronic device comprising the filter of 19 or the bulk acoustic wave resonator of any one of claims 1-18.
The electronic device comprises but is not limited to intermediate products such as a radio frequency front end and a filtering amplification module, and terminal products such as a mobile phone, WIFI and an unmanned aerial vehicle.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (20)
1. A bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode; and
a single crystal piezoelectric layer disposed between the bottom electrode and the top electrode,
wherein:
a support structure is arranged between the lower surface of the piezoelectric layer and the upper surface of the substrate, and the piezoelectric layer and the substrate are arranged in a substantially parallel manner;
the bottom electrode and/or the top electrode are/is a gap electrode, the gap electrode is provided with at least one gap layer, and the gap layer and the top surface and the bottom surface of the gap electrode have a distance in the thickness direction of the gap electrode; and is provided with
The support structure includes a recess in which the bottom electrode is disposed.
2. The resonator of claim 1, wherein:
the gap electrode has a gap layer.
3. The resonator of claim 2, wherein:
the gap electrode includes a first electrode layer and a second electrode layer which are stacked in the thickness direction of the resonator and connected in parallel with each other, the gap layer is provided between the first electrode layer and the second electrode layer, and the first electrode layer is in surface contact with the piezoelectric layer.
4. The resonator of claim 3, wherein:
the bottom electrode and the top electrode are both gap electrodes; and is
The thicknesses of the first electrode layers on the upper side and the lower side of the piezoelectric layer are the same.
5. The resonator of claim 4, wherein:
the thicknesses of the second electrode layers on the upper side and the lower side of the piezoelectric layer are the same.
6. The resonator of claim 5, wherein:
the top electrode and the bottom electrode on both upper and lower sides of the piezoelectric layer are arranged in central symmetry with respect to each other in a cross section parallel to the thickness direction of the resonator and passing through the electrode connection portions of the top electrode and the bottom electrode at the same time.
7. The resonator of claim 3, wherein:
in the gap electrode, the thickness of the first electrode layer is smaller than that of the second electrode layer.
8. The resonator of claim 3, wherein:
the bottom electrode is a gap electrode, and the gap layer is positioned in the concave part; and is
The void layer in the bottom electrode constitutes the acoustic mirror, wherein: the overlapping area of the top electrode, the first electrode layer of the bottom electrode, the piezoelectric layer and the void layer in the thickness direction of the resonator constitutes an effective area of the resonator.
9. The resonator of claim 8, wherein:
the concave part comprises a cavity, and the upper side and the lower side of the second electrode layer of the bottom electrode are respectively provided with a gap layer and the cavity.
10. The resonator of claim 8, wherein:
the second electrode layer of the bottom electrode covers the bottom of the recess.
11. The resonator of claim 1, wherein:
the thickness of the void layer is within
Within the range of (1).
12. The resonator of claim 1, wherein:
the non-electrode connecting end of the bottom electrode is embedded in the supporting structure, and the bottom electrode embedded in the supporting structure is in surface contact with the piezoelectric layer and the supporting structure respectively in the vertical direction parallel to the thickness direction of the resonator.
13. The resonator of any of claims 1-12, wherein:
the top electrode and/or the bottom electrode are flat electrodes.
14. The resonator of any of claims 1-11, wherein:
the top electrode and/or the bottom electrode are provided with a bridge wing structure comprising a bridge structure and/or a cantilever structure.
15. The resonator of any of claims 1-14, wherein:
the superposition area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator forms an effective area of the resonator;
outside the active area, at least a portion of an upper surface of the piezoelectric layer is provided with an insulating layer.
16. The resonator of claim 15, wherein:
the insulating layer is at least arranged between the lower surface of the top electrode and the upper surface of the piezoelectric layer in an area corresponding to the part of the top electrode outside the effective area;
the material of the insulating layer is selected from one of silicon dioxide, silicon nitride, silicon carbide and sapphire, or the thermal conductivity coefficient of the material of the insulating layer is not less than 0.2W/cm K.
17. The resonator of claim 1, wherein:
the gap electrode includes a first electrode layer and a second electrode layer which are stacked in a thickness direction of the resonator and connected in parallel with each other;
the lower surface and the upper surface of the piezoelectric layer, and the first electrode layer and the second electrode layer have portions both parallel to each other in an active area of the resonator.
18. The resonator of claim 17, wherein:
the top electrode and the bottom electrode are both gap electrodes; and is
The portions of the top and bottom electrodes within the active area are symmetrically arranged about the center of the active area of the resonator.
19. A filter comprising the bulk acoustic wave resonator according to any one of claims 1-18.
20. An electronic device comprising the filter of claim 19, or the bulk acoustic wave resonator of any of claims 1-18.
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| CN117176101A (en) * | 2022-10-27 | 2023-12-05 | 北京芯溪半导体科技有限公司 | Bulk acoustic wave resonator, preparation method thereof, filter and electronic equipment |
| WO2024021844A1 (en) * | 2022-07-28 | 2024-02-01 | 诺思(天津)微系统有限责任公司 | Bulk acoustic resonator and manufacturing method therefor, filter, and electronic device |
| CN117639713A (en) * | 2023-02-02 | 2024-03-01 | 北京芯溪半导体科技有限公司 | Bulk acoustic wave resonator, method of manufacturing the same, filter, and electronic apparatus |
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| CN117691967A (en) * | 2024-02-04 | 2024-03-12 | 深圳新声半导体有限公司 | D-BAW air bridge structure and forming method thereof |
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| JP3930531B1 (en) * | 2006-07-28 | 2007-06-13 | 渡邊 隆彌 | Crystal module |
| CN111010122B (en) * | 2019-10-23 | 2021-06-01 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator having electrode with void layer, filter, and electronic device |
| CN111010135A (en) * | 2019-10-26 | 2020-04-14 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, filter, and electronic device |
| CN111740718A (en) * | 2020-06-22 | 2020-10-02 | 深圳市信维通信股份有限公司 | Bulk acoustic wave resonance device, filtering device and radio frequency front end device |
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| WO2024021844A1 (en) * | 2022-07-28 | 2024-02-01 | 诺思(天津)微系统有限责任公司 | Bulk acoustic resonator and manufacturing method therefor, filter, and electronic device |
| CN117176101A (en) * | 2022-10-27 | 2023-12-05 | 北京芯溪半导体科技有限公司 | Bulk acoustic wave resonator, preparation method thereof, filter and electronic equipment |
| CN117639713A (en) * | 2023-02-02 | 2024-03-01 | 北京芯溪半导体科技有限公司 | Bulk acoustic wave resonator, method of manufacturing the same, filter, and electronic apparatus |
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