CN114696082A - Structure for improving polarization bandwidth of micro microstrip antenna - Google Patents
Structure for improving polarization bandwidth of micro microstrip antenna Download PDFInfo
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- CN114696082A CN114696082A CN202210458761.6A CN202210458761A CN114696082A CN 114696082 A CN114696082 A CN 114696082A CN 202210458761 A CN202210458761 A CN 202210458761A CN 114696082 A CN114696082 A CN 114696082A
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- 230000010287 polarization Effects 0.000 title claims abstract description 32
- 230000005855 radiation Effects 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 abstract description 5
- 238000010168 coupling process Methods 0.000 abstract description 5
- 238000005859 coupling reaction Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 230000008030 elimination Effects 0.000 abstract description 2
- 238000003379 elimination reaction Methods 0.000 abstract description 2
- 238000001914 filtration Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 238000005388 cross polarization Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
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Abstract
The invention relates to the technical field of micro microstrip antennas, in particular to a structure for improving the polarization bandwidth of a micro microstrip antenna, which comprises a first structure layer, a second structure layer, a third structure layer and a fourth structure layer; the first structural layer comprises a first dielectric layer and a first radiation patch; the second structural layer comprises a second dielectric layer and a second radiation patch; the third structure layer comprises a third medium layer and a third radiation patch, and the third radiation patch is provided with a first slit groove and a second slit groove; the fourth structure layer comprises a fourth medium layer, a first feed layer and a second feed layer; the first feed layer corresponds to the first slot, and the second feed layer corresponds to the second slot. According to the invention, a 2-order band elimination filtering effect is formed through asymmetric slot slots and feed layers in different shapes, mutual coupling of two ports is isolated, polarization stability of the antenna is greatly increased on the basis of miniaturization, and good port polarization is ensured.
Description
Technical Field
The invention relates to the technical field of micro microstrip antennas, in particular to a structure for improving the polarization bandwidth of a micro microstrip antenna.
Background
Since the introduction of microstrip antennas, they have been widely studied for their advantages of low profile, small size, low cost, and easy integration. The continuous development of microstrip antenna technology has overcome some inherent defects such as large Q value of narrow bandwidth, large loss, small power capacity, large influence of dielectric substrate material on performance and the like, and the whole microstrip antenna field has great progress in the aspects of broadband, multi-polarization, miniaturization, integration and the like. But for a dual port (or multi-port) microstrip antenna, the antenna polarization and antenna volume is a spear. The smaller the antenna volume is, the stronger the mutual coupling between ports is, resulting in a lot of small or miniature multi-port microstrip antennas, the worse the polarization stability in the whole frequency band is, even some can only reach the polarization requirement at individual frequency point, resulting in the unsatisfying demand.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a structure for improving the polarization bandwidth of a micro microstrip antenna.
In order to solve the technical problems, the invention adopts the following technical scheme:
a structure for improving polarization bandwidth of a micro microstrip antenna comprises a first structure layer, a second structure layer, a third structure layer and a fourth structure layer; the first structural layer, the second structural layer, the third structural layer and the fourth structural layer are connected in a stacking manner from top to bottom; the first structural layer comprises a first dielectric layer and a first layer of radiation patches, and the first layer of radiation patches are positioned on the lower surface of the first dielectric layer; the second structural layer comprises a second dielectric layer and a second radiation patch, and the second radiation patch is positioned on the lower surface of the second dielectric layer; the third structural layer comprises a third medium layer and a third radiation patch, the third radiation patch is positioned on the lower surface of the third medium layer, and a first slit groove and a second slit groove are formed in the third radiation patch; the fourth structure layer comprises a fourth medium layer, a first feed layer and a second feed layer; the first feed layer and the second feed layer are located on the lower surface of the fourth dielectric layer, the first feed layer corresponds to the first slot, and the second feed layer corresponds to the second slot.
The further technical scheme is as follows: the first feed layer and the second feed layer are both metal conduction bands.
The further technical scheme is as follows: the first feed layer is T-shaped, and the second feed layer is shoulder-pole-shaped.
The further technical scheme is as follows: the first slit groove and the second slit groove are both dumbbell-shaped.
The further technical scheme is as follows: the first structural layer, the second structural layer, the third structural layer and the fourth structural layer are all square, and the areas of the first structural layer, the second structural layer, the third structural layer and the fourth structural layer are the same.
The further technical scheme is as follows: the side lengths of the first structural layer, the second structural layer, the third structural layer and the fourth structural layer are all 6 mm.
The further technical scheme is as follows: the relative dielectric constants of the first dielectric layer and the fourth dielectric layer are both 6.15.
The further technical scheme is as follows: and the relative dielectric constants of the second dielectric layer and the third dielectric layer are both 1.
The further technical scheme is as follows: the thickness of the first dielectric layer is 0.1mm, the thickness of the second dielectric layer is 0.1mm, the thickness of the third dielectric layer is 0.7mm, and the thickness of the fourth dielectric layer is 0.2 mm.
The further technical scheme is as follows: further comprising: and the reflecting plate is positioned below the fourth structural layer.
Compared with the prior art, the invention has the beneficial effects that: through asymmetric slot and feed layers in different shapes, a 2-order band elimination filter effect is formed, mutual coupling of two ports is isolated, polarization stability of the antenna is greatly improved on the basis of miniaturization, good port polarization is guaranteed, and requirements can be better met.
The invention is further described below with reference to the accompanying drawings and specific embodiments.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic diagram of a structure for increasing polarization bandwidth of a micro microstrip antenna according to the present invention;
FIG. 2 is a schematic view of the underside of a first structural layer provided by the present invention;
FIG. 3 is a schematic view of the bottom of a second structural layer provided by the present invention;
FIG. 4 is a schematic view of the underside of a third structural layer provided by the present invention;
FIG. 5 is a schematic view of the bottom of a fourth structural layer provided in accordance with the present invention;
fig. 6 is a schematic diagram of the full band port 1 polarization ratio provided by the present invention;
fig. 7 is a schematic diagram of the full band port 2 polarization ratio provided by the present invention;
fig. 8 is a schematic diagram of main polarization and cross polarization of a full-band port 1 provided by the present invention;
fig. 9 is a schematic diagram of main polarization and cross polarization of a full-band port 2 provided by the present invention;
fig. 10 is a schematic diagram of a full-band port 1 and port 2 standing wave provided by the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in detail with reference to the accompanying drawings and the detailed description.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be connected or detachably connected or integrated; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above should not be understood to necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by one skilled in the art.
As shown in fig. 1 to 5, the present invention discloses a specific embodiment of a structure for increasing polarization bandwidth of a micro microstrip antenna, which includes a first structure layer 10, a second structure layer 20, a third structure layer 30 and a fourth structure layer 40; the first structural layer 10, the second structural layer 20, the third structural layer 30 and the fourth structural layer 40 are connected in a stacked manner from top to bottom; the first structural layer 10 includes a first dielectric layer 11 and a first layer of radiation patches 12, and the first layer of radiation patches 12 are located on the lower surface of the first dielectric layer 11; the second structural layer 20 includes a second dielectric layer 21 and a second radiation patch 22, and the second radiation patch 22 is located on the lower surface of the second dielectric layer 21; the third structural layer 30 includes a third dielectric layer 31 and a third radiation patch 32, the third radiation patch 32 is located on the lower surface of the third dielectric layer 31, and the third radiation patch 32 is provided with a first slot 321 and a second slot 322; the fourth structure layer 40 includes a fourth dielectric layer 41, a first feed layer 42 and a second feed layer 43; the first feed layer 42 and the second feed layer 43 are located on the lower surface of the fourth dielectric layer 41, the first feed layer 42 corresponds to the first slit 321, and the second feed layer 43 corresponds to the second slit 322.
In the present embodiment, the first slot 321 and the second slot 322 are different in size and are asymmetric.
Specifically, the miniature microstrip antenna is designed in a mode of adopting the asymmetric slot feed slot and using the feed conduction bands with different deformation structures, and a 2-order band-stop filtering effect is actually formed through the asymmetric slot and the feed conduction bands with different shapes, so that the mutual coupling of two ports is isolated, and the polarization stability of the antenna is greatly improved on the basis of miniaturization.
In the present embodiment, the first feeding layer 42 and the second feeding layer 43 are both metal conductive strips; the first feed layer 42 is T-shaped, and the second feed layer 43 is shoulder-pole shaped. The power is fed through the two conduction bands corresponding to the first slot 321 and the second slot 322, one for each conduction band.
In other embodiments, the first feed layer 42 and the second feed layer 43 may also take other shapes, such as: s type or wave type, etc., can be designed flexibly according to actual conditions to adapt to different application scenarios.
In this embodiment, the first slot 321 and the second slot 322 are both dumbbell-shaped, and the first layer radiating patch 12 and the second layer radiating patch 22 are fed through the first slot 321 and the second slot 322, so as to implement dual polarization.
In other embodiments, the first slot 321 and the second slot 322 may have other shapes, such as: the hexagonal dumbbell, the circular dumbbell, the triangular dumbbell and the like can be flexibly designed according to actual conditions so as to adapt to different application scenes.
As shown in fig. 1 to 5, the first structural layer 10, the second structural layer 20, the third structural layer 30 and the fourth structural layer 40 are all square, and the areas of the first structural layer 10, the second structural layer 20, the third structural layer 30 and the fourth structural layer 40 are the same, and are 6mm × 6 mm.
The side lengths of the first structural layer 10, the second structural layer 20, the third structural layer 30 and the fourth structural layer 40 are all 6 mm.
Specifically, the side lengths of the first dielectric layer 11, the second dielectric layer 12, the third dielectric layer 13 and the fourth dielectric layer 14 are all 6 mm. The first layer of radiating patches 12 and the second layer of radiating patches 22 are both square, wherein the side length of the first layer of radiating patches 12 is 2mm, and the side length of the second layer of radiating patches 22 is 2.4 mm.
The relative dielectric constants of the first dielectric layer 11 and the fourth dielectric layer 14 are both 6.15, and other relative dielectric constants can be adopted according to needs, for example: 6.35 or 5.85, etc.
Wherein the relative dielectric constants of the second dielectric layer 12 and the third dielectric layer 13 are both 1. Specifically, in the present embodiment, the second dielectric layer 12 and the third dielectric layer 13 are each replaced with an air layer or other material having a relative dielectric constant of 1.
As shown in fig. 1, the thickness of the first dielectric layer 11 is 0.1mm, the thickness of the second dielectric layer 12 is 0.1mm, the thickness of the third dielectric layer 13 is 0.7mm, and the thickness of the fourth dielectric layer 14 is 0.2 mm. The working frequency band of the structure for improving the polarization bandwidth of the micro microstrip antenna is 14 GHz-17 GHz, the thickness of the whole structure is 1.1mm, the area is 6mm multiplied by 6mm, the polarization stability is good in the whole frequency band, and the polarization bandwidth reaches 19.4%. On a wider frequency band, the mutual coupling between two ports is overcome, and good port polarization is ensured.
In other embodiments, the working frequency band of the structure for improving the polarization bandwidth of the micro microstrip antenna is not limited to the frequency band set forth in the present invention, and the required frequency band can be designed according to actual needs.
As shown in fig. 1, the structure for improving the polarization bandwidth of the micro microstrip antenna further includes: a reflective plate 50, wherein the reflective plate 50 is located below the fourth structural layer 40. The reflective plate 50 is made of metal, the area is not limited, and the reflective plate 50 may be designed according to actual conditions, the distance from the fourth structural layer 40 is about one-fourth of the working wavelength, and in this embodiment, the distance is 5 mm.
As shown in fig. 6 to 10, the present invention provides standing wave, polarization ratio, main polarization and cross polarization data of each port in a frequency band; it can be seen that port 1 and port 2 have good polarization stability, no polarization angle distortion is found in the full frequency band, port 1 is always at 90 °, and port 2 is always at 0 °; the cross polarization of the two ports is good, basically about 30dB, and the standing waves of the 2 ports are all below 1.8.
The above embodiments are preferred implementations of the present invention, and the present invention can be implemented in other ways without departing from the spirit of the present invention.
Claims (10)
1. A structure for improving the polarization bandwidth of a micro microstrip antenna is characterized by comprising a first structure layer, a second structure layer, a third structure layer and a fourth structure layer; the first structural layer, the second structural layer, the third structural layer and the fourth structural layer are connected in a stacking manner from top to bottom; the first structure layer comprises a first dielectric layer and a first layer of radiation patch, and the first layer of radiation patch is positioned on the lower surface of the first dielectric layer; the second structural layer comprises a second dielectric layer and a second radiation patch, and the second radiation patch is positioned on the lower surface of the second dielectric layer; the third structural layer comprises a third medium layer and a third radiation patch, the third radiation patch is positioned on the lower surface of the third medium layer, and a first slit groove and a second slit groove are formed in the third radiation patch; the fourth structure layer comprises a fourth medium layer, a first feed layer and a second feed layer; the first feed layer and the second feed layer are located on the lower surface of the fourth dielectric layer, the first feed layer corresponds to the first slot, and the second feed layer corresponds to the second slot.
2. The structure of claim 1, wherein the first feed layer and the second feed layer are metal conductive strips.
3. The structure of claim 1, wherein the first feeding layer is T-shaped, and the second feeding layer is shoulder-pole shaped.
4. The structure of claim 1, wherein the first slot and the second slot are dumbbell-shaped.
5. The structure of claim 1, wherein the first, second, third and fourth structural layers are square, and the areas of the first, second, third and fourth structural layers are the same.
6. The structure of claim 5, wherein the first, second, third and fourth structural layers have a side length of 6 mm.
7. The structure of claim 1, wherein the relative dielectric constants of the first dielectric layer and the fourth dielectric layer are both 6.15.
8. The structure of claim 1, wherein the relative dielectric constants of the second dielectric layer and the third dielectric layer are both 1.
9. The structure of claim 1, wherein the first dielectric layer has a thickness of 0.1mm, the second dielectric layer has a thickness of 0.1mm, the third dielectric layer has a thickness of 0.7mm, and the fourth dielectric layer has a thickness of 0.2 mm.
10. The structure of claim 1, further comprising: and the reflecting plate is positioned below the fourth structural layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210458761.6A CN114696082A (en) | 2022-04-27 | 2022-04-27 | Structure for improving polarization bandwidth of micro microstrip antenna |
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| CN202210458761.6A CN114696082A (en) | 2022-04-27 | 2022-04-27 | Structure for improving polarization bandwidth of micro microstrip antenna |
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Citations (6)
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|---|---|---|---|---|
| CN104852158A (en) * | 2015-04-13 | 2015-08-19 | 复旦大学 | P-band broadband high-isolation double circularly-polarized thin-film array antenna |
| US20160094091A1 (en) * | 2014-09-25 | 2016-03-31 | Agency For Defense Development | Wideband rectenna and rectifying apparatus for rectenna |
| CN106887690A (en) * | 2017-04-07 | 2017-06-23 | 西安电子工程研究所 | Broadband low section microstrip antenna based on the excitation of dumb-bell shape slot-coupled |
| CN107342458A (en) * | 2017-07-02 | 2017-11-10 | 中国航空工业集团公司雷华电子技术研究所 | A kind of corner-fed formula wide-band high-isolation dual-polarized antenna |
| CN108777353A (en) * | 2018-05-24 | 2018-11-09 | 湖南国科锐承电子科技有限公司 | A kind of high isolation low-cross polarization Double-polarization micro-strip array antenna |
| CN110190387A (en) * | 2019-05-08 | 2019-08-30 | 成都天锐星通科技有限公司 | A kind of single feedback double-circle polarization microstrip antenna |
-
2022
- 2022-04-27 CN CN202210458761.6A patent/CN114696082A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160094091A1 (en) * | 2014-09-25 | 2016-03-31 | Agency For Defense Development | Wideband rectenna and rectifying apparatus for rectenna |
| CN104852158A (en) * | 2015-04-13 | 2015-08-19 | 复旦大学 | P-band broadband high-isolation double circularly-polarized thin-film array antenna |
| CN106887690A (en) * | 2017-04-07 | 2017-06-23 | 西安电子工程研究所 | Broadband low section microstrip antenna based on the excitation of dumb-bell shape slot-coupled |
| CN107342458A (en) * | 2017-07-02 | 2017-11-10 | 中国航空工业集团公司雷华电子技术研究所 | A kind of corner-fed formula wide-band high-isolation dual-polarized antenna |
| CN108777353A (en) * | 2018-05-24 | 2018-11-09 | 湖南国科锐承电子科技有限公司 | A kind of high isolation low-cross polarization Double-polarization micro-strip array antenna |
| CN110190387A (en) * | 2019-05-08 | 2019-08-30 | 成都天锐星通科技有限公司 | A kind of single feedback double-circle polarization microstrip antenna |
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