CN114695804A - Electron transport layer material, QLED device, preparation method of QLED device and display device - Google Patents
Electron transport layer material, QLED device, preparation method of QLED device and display device Download PDFInfo
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Abstract
The invention provides an electron transport layer material and a preparation method thereof, a QLED device and a preparation method thereof and a display device. An electron transport layer material comprising: a metal oxide doped with a doping element, wherein the doping element comprises Li and F. By doping lithium element and fluorine element in the metal oxide, the electron transfer rate of the electron transport layer is effectively reduced, so that the quantity of electrons and holes in the luminescent layer tends to be more balanced, and the luminescent efficiency of the QLED device is improved.
Description
Technical Field
The invention relates to the field of display, in particular to an electron transport layer material and a preparation method thereof, a QLED (quantum dot light emitting diode) device and a preparation method thereof and a display device.
Background
Quantum dot light emitting diodes (QLEDs) are gradually favored by the industry in the field of new display technologies, which are derived from the relatively excellent properties of quantum dots, such as good color purity and stability of light emission. A great deal of research results have been shown in the research field of quantum dot light emitting diode devices, wherein the mobility of charges in different functional layers is an important technical parameter of QLED devices. In related technologies, metal oxide nanoparticles are mostly used as a material for manufacturing an electron transport layer in a QLED device, and the injection and transport efficiency of electrons in the device is much higher than that of holes, so that the injection of electrons/holes in a light emitting layer in the device is unbalanced, and further the improvement of the device efficiency is limited.
Therefore, the current electron transport layer material and the preparation method thereof, the QLED device and the preparation method thereof, and the display device still need to be improved.
Disclosure of Invention
In one aspect of the present invention, the present invention provides an electron transport layer material comprising: a metal oxide doped with a doping element, wherein the doping element comprises Li and F. Therefore, the electron mobility of the electron transport layer can be accurately regulated.
According to an embodiment of the present invention, the metal oxide includes at least one of ZnO and NiO. Therefore, the electron mobility of the electron transport layer can be further regulated.
According to an embodiment of the present invention, the mass fraction of the fluorine element in the metal oxide is 25 to 40%, and the mass fraction of the lithium element in the metal oxide is 1 to 5%. Therefore, the electron mobility of the electron transport layer can be further regulated.
In another aspect of the present invention, the present invention provides a method for preparing the electron transport layer material as described above, comprising: providing a solvent, adding a metal oxide to the solvent to form a first solution, adding a lithium source material and a fluorine source material to the first solution to form a second solution, and mixing the second solution to form a third solution. Thereby, an electron transport layer material having a relatively slow electron mobility can be obtained.
According to an embodiment of the present invention, the solvent includes at least one of ethanol and isopropanol, the lithium source is lithium acetate dihydrate, and the fluorine source is tetramethylammonium hydroxide pentahydrate. Thus, the metal oxide doped with the doping element can be obtained by a relatively simple method.
According to an embodiment of the present invention, the mass fraction of the lithium source material in the second solution is 1 to 3%, and the mass fraction of the fluorine source material in the second solution is 20 to 40%. Therefore, the electron mobility of the electron transport layer can be accurately regulated.
In yet another aspect of the present invention, the present invention provides a method of making a QLED device, comprising: providing a substrate, wherein an anode is arranged on the substrate and is positioned on one side of the substrate, a hole injection layer is formed on one side of the anode, which is far away from the substrate, a hole transport layer is formed on one side of the hole injection layer, which is far away from the anode, a light-emitting layer is formed on one side of the hole transport layer, which is far away from the hole injection layer, an electron transport layer is formed on one side of the light-emitting layer, which is far away from the hole transport layer, and a cathode is formed on one side of the electron transport layer, which is far away from the light-emitting layer, wherein the material for forming the electron transport layer is the electron transport layer material prepared by the method. Thus, a QLED device having high luminous efficiency can be obtained.
According to an embodiment of the present invention, forming the hole injection layer further includes: and performing first spin coating treatment on the side of the anode, which is far away from the substrate, to form a preformed hole injection layer, and performing first annealing treatment on the preformed hole injection layer to form the hole injection layer. Thus, a hole injection layer having high hole injection efficiency can be obtained relatively easily.
According to the embodiment of the invention, the rotation speed of the first spin coating process is 3000-4000rpm, and the time of the first spin coating process is 45-60 s. Thus, a hole injection layer having an appropriate thickness can be obtained relatively easily.
According to the embodiment of the invention, the temperature of the first annealing treatment is 140-160 ℃, and the time of the first annealing treatment is 10-20 min. Thus, a hole injection layer having excellent performance can be obtained relatively easily.
According to an embodiment of the present invention, forming the hole transport layer further includes: and performing second spin coating treatment on the side of the hole injection layer far away from the anode to form a preformed hole transport layer, and performing second annealing treatment on the preformed hole transport layer to form the hole transport layer. Thus, a hole transport layer having high hole mobility can be obtained relatively easily.
According to the embodiment of the invention, the rotation speed of the second spin coating process is 3000-3500rpm, and the time of the second spin coating process is 40-50 s. Thus, a hole transport layer having an appropriate thickness can be obtained relatively easily.
According to the embodiment of the invention, the temperature of the second annealing treatment is 140-160 ℃, and the time of the second annealing treatment is 20-40 min. Thus, a hole transport layer having excellent performance can be obtained relatively easily.
According to an embodiment of the present invention, forming the light emitting layer further includes: and carrying out third spin coating treatment on the side of the hole transport layer far away from the hole injection layer to form the light-emitting layer. Thus, a light-emitting layer with good performance can be obtained relatively easily.
According to the embodiment of the present invention, the spin rate of the third spin-coating process is 2000-3000rpm, and the time of the third spin-coating process is 40-50 s. Thus, a light-emitting layer having an appropriate thickness can be obtained relatively easily.
According to an embodiment of the present invention, forming the electron transport layer further comprises: and performing fourth spin coating treatment on the side of the light-emitting layer far away from the hole transport layer to form a preformed electron transport layer, and performing third annealing treatment on the preformed electron transport layer to form the electron transport layer. Thus, an electron transport layer having a relatively low electron transport rate can be obtained.
According to the embodiment of the invention, the rotation speed of the fourth spin coating process is 2000-3000rpm, and the time of the fourth spin coating process is 40-50 s. Thus, an electron transport layer having an appropriate thickness can be obtained relatively easily.
According to the embodiment of the invention, the temperature of the third annealing treatment is 70-90 ℃, and the time of the third annealing treatment is 20-40 min. Thus, an electron transport layer having excellent performance can be obtained relatively easily.
According to an embodiment of the present invention, further comprising: forming an encapsulation layer on a side of the cathode away from the electron transport layer, the forming the encapsulation layer comprising: and arranging a pre-cured adhesive layer on one side of the cathode, which is far away from the electron transmission layer, and carrying out illumination treatment on the pre-cured adhesive layer to form the packaging layer. Therefore, the performance of resisting external water vapor interference of the QLED device can be improved through the arrangement of the packaging layer.
According to the embodiment of the invention, the material for forming the pre-cured glue layer is UV resin, the illumination treatment is ultraviolet illumination treatment, and the time of the ultraviolet illumination treatment is 30 s. Therefore, the QLED device with good packaging performance can be obtained relatively simply.
In yet another aspect, the present invention provides a QLED device prepared by the method described above. Therefore, the QLED device has all the features and advantages of the foregoing fabrication method, and will not be described herein again.
According to an embodiment of the present invention, the material of the hole injection layer includes at least one of PEDOT and PVK, the material of the hole transport layer includes at least one of TFB and PMA, and the material of the light emitting layer includes at least one of ZnCdS, CdSe and lnAlAs. Thereby, the light emitting efficiency of the QLED device can be further improved.
In yet another aspect of the invention, the invention provides a display apparatus comprising the aforementioned QLED device. Since the QLED device is described above, the display device has all the features and advantages of the QLED device described above, and thus, the description thereof is omitted.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 shows a schematic flow diagram of a method for preparing an electron transport layer material according to one embodiment of the present invention;
fig. 2 shows a schematic flow diagram of a method of fabricating a QLED device according to an embodiment of the invention;
fig. 3 shows a schematic flow diagram of a method of fabricating a QLED device according to yet another embodiment of the invention;
FIG. 4 shows a schematic diagram of a QLED device according to one embodiment of the invention;
fig. 5 shows a schematic structural diagram of a QLED device according to yet another embodiment of the present invention.
Description of reference numerals:
100: a substrate; 200: an anode; 300: a hole injection layer; 400: a hole transport layer; 500: a light emitting layer; 600: an electron transport layer; 700: a cathode; 800: and (7) packaging the layer.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
The present application is made based on the findings of the inventors on the following problems:
at present, the QLED device in the related art generally uses a metal oxide which is not doped with an element as a material for forming an electron transport layer, and the inventors found that since the hole mobility of a hole injection layer and a hole transport layer material generally used in the QLED device is much smaller than that of the metal oxide for forming the electron transport layer, the injection and transport efficiency of electrons in the device is much greater than that of holes. Since electrons and holes need to be coupled in the light-emitting layer to form excitons, the excitons undergo radiative transitions, emitting photons, releasing energy. The transmission rate of electrons in the QLED device of the related art is higher than that of holes, so that the number of carriers in the light-emitting layer is unbalanced, and an unbalanced phenomenon occurs in which electrons are majority carriers and holes are minority carriers, that is, electrons and holes in the light-emitting layer are unbalanced, thereby greatly affecting the light-emitting efficiency of the device.
The present application is directed to solving, to some extent, one of the technical problems in the related art.
In one aspect of the present invention, the present invention provides an electron transport layer material comprising: a metal oxide doped with a doping element, wherein the doping element comprises Li and F. By doping lithium element and fluorine element in the metal oxide, the electron transfer rate of the electron transport layer is effectively reduced, so that the quantity of electrons and holes in the luminescent layer tends to be more balanced, and the luminescent efficiency of the QLED device is improved.
For ease of understanding, the following explains the principle that the electron transport layer material in the present application has the aforementioned advantageous effects:
in the related art, metal oxide nanoparticles that are not element-doped are generally used as a material of an electron transport layer, such as ZnO. The inventor finds that the QLED device adopting the ZnO nanoparticles doped without elements as the electron transmission layer not only has the problems of excessive electron injection, unbalanced carrier injection and low luminous efficiency, but also has more ZnO surface defects, which cause charge accumulation when being directly contacted with the quantum dot layer, and the defect state of the ZnO surface can cause exciton dissociation of the luminous layer, further cause quenching of the luminous layer, and obviously reduce the External Quantum Efficiency (EQE) of the device.
In the related art, a method of inserting a buffer layer between an electron transport layer and a light emitting layer is generally used to reduce an electron transfer rate, but it is difficult to significantly change a defect state of a ZnO surface, and a problem of quenching of the light emitting layer due to the defect state of the ZnO surface cannot be improved.
In the application, the inventor dopes a proper amount of Li and F in the metal oxide, so that the band gap of the metal oxide is widened, the position of a conduction band is moved upwards, an electron injection potential barrier at the interface of an electron transport layer and a cathode is increased, the difficulty of electron injection is increased, the electron mobility of the electron transport layer is accurately regulated and controlled to be matched with the hole mobility of a device, and the balance of current carriers is improved to a certain extent. In addition, the doping element also effectively improves the surface defect state of the metal oxide, thereby inhibiting the quenching phenomenon of the metal oxide on the luminescent layer, leading the quantity of electrons and holes in the luminescent layer to be more balanced and effectively improving the luminous efficiency of the device.
According to some embodiments of the present invention, the kind of the metal oxide is not particularly limited, and for example, the metal oxide may include at least one of ZnO and NiO. ZnO and NiO have good lattice structure and electrical characteristics, belong to wide bandgap semiconductors at room temperature, have higher exciton confinement energy, have stronger effect of blocking holes when being used as an electron transport layer of a QLED device, have the transmittance in a visible light region of more than 90 percent, and are beneficial to improving the luminous efficiency of the QLED device.
According to some embodiments of the present invention, the proportion of the doping element in the metal oxide is not particularly limited, and for example, the mass fraction of the fluorine element in the metal oxide may be 25 to 40%, and the mass fraction of the lithium element in the metal oxide may be 1 to 5%. When the proportion of the doping elements in the metal oxide is within the range, the electron mobility of the formed electron transport layer is matched with the hole mobility of the device; when the proportion of the doping elements in the metal oxide is smaller than the range, the regulation and control effect of the doping elements on the metal oxide is not obvious, and the electron mobility of the formed electron transport layer is still far higher than the hole mobility of the device; when the ratio of the doping elements in the metal oxide is greater than the above range, the electron mobility of the electron transport layer is too low, which is not favorable for the electrons of the cathode to migrate to the light emitting layer through the electron transport layer. When the proportion of one of the doping elements is smaller than the above range and the proportion of the other doping element is larger than the above range, the electron transport is also not facilitated, so that the electron transport rate is too low, and the device performance is not facilitated to be improved.
In another aspect of the present invention, the present invention provides a method for preparing the aforementioned electron transport layer material, specifically, referring to fig. 1, comprising the steps of:
s10: providing a solvent
According to some embodiments of the present invention, the kind of the solvent is not particularly limited as long as it can well disperse the metal oxide nanoparticles, and for example, the solvent may be at least one of ethanol and isopropanol.
S20: adding metal oxide into solvent
According to some embodiments of the present invention, the metal oxide is added to the solvent at this step to form the first solution, the kind of the metal oxide is not particularly limited, and for example, the metal oxide may be at least one of ZnO and NiO. In order to facilitate the metal oxide to be uniformly dispersed in the solvent more quickly, the first solution may be subjected to a stirring treatment, and the temperature of the stirring treatment may be room temperature.
S30: adding a lithium source material and a fluorine source material to the first solution
According to some embodiments of the present invention, a second solution is formed by adding a lithium source material and a fluorine source material to the first solution in step, and the metal oxide nanoparticles are doped with an appropriate amount of Li and F by the addition of the lithium source and the fluorine source, thereby improving the metal oxide and the surface defect state and the electron mobility of the electron transport layer.
According to some embodiments of the present invention, the kind of the lithium source material and the fluorine source material is not particularly limited, and for example, the lithium source material may be lithium acetate dihydrate (LiAc · H)2O), the fluorine source may be tetramethylammonium hydroxide pentahydrate (TMAH).
According to some embodiments of the present invention, the ratio of the lithium source material and the fluorine source material added to the first solution is not particularly limited as long as it can be added such that the electron mobility of the metal oxide matches the hole mobility of the hole transport layer and the hole injection layer. For example, the mass fraction of the lithium source material in the second solution may be 1 to 3%, and the mass fraction of the fluorine source material in the second solution may be 20 to 40%. Therefore, the proportion of Li and F doped in the metal oxide is in a proper range, and the precise regulation of the electron mobility is realized.
S40: mixing the second solution
According to some embodiments of the present invention, the method of the mixing treatment is not particularly limited, for example, the manner of the mixing treatment may be a stirring treatment, preferably, the time of the stirring treatment may be 1h, and the temperature of the stirring treatment may be room temperature.
In yet another aspect of the present invention, the present invention proposes a method of manufacturing a QLED device, in particular, with reference to fig. 2, comprising the steps of:
s100: providing a substrate
According to some embodiments of the present invention, the substrate is provided at the step, the kind of the substrate is not particularly limited, for example, the substrate may adopt a conductive glass, and specifically, the conductive glass may be subjected to a pretreatment before use, the pretreatment including: the conductive glass is subjected to ultrasonic cleaning by using isopropanol, water and acetone in sequence, and then subjected to ultraviolet UV treatment for 5-10min, so that oil-soluble or water-soluble impurities remaining on the surface of the conductive glass can be effectively removed, and then an anode can be formed on one side surface of the substrate, wherein the material for forming the anode is not particularly limited, and for example, the material for forming the anode can be ITO. Thereby, a substrate provided with an anode, wherein the anode is located on one side surface of the substrate, can be provided.
S200: forming a hole injection layer on the anode side far from the substrate
According to some embodiments of the invention, in this step, a hole injection layer is formed on a side of the anode remote from the substrate. The method of forming the hole injection layer is not particularly limited, and for example, a first spin coating treatment may be performed on the side of the anode remote from the substrate to form a pre-formed hole injection layer, and a first annealing treatment may be performed on the pre-formed hole injection layer to form the hole injection layer. Thus, holes can be injected from the anode into the hole injection layer under the action of an applied electric field.
According to some embodiments of the present invention, the rotation speed and time of the rotation speed of the first spin-coating process are not particularly limited, for example, the rotation speed of the first spin-coating process may be 3000-4000rpm, and the time of the first spin-coating process may be 45-60 s. Thus, a hole injection layer having an appropriate thickness can be obtained relatively easily.
According to some embodiments of the present invention, the temperature and time of the first annealing treatment are not particularly limited, for example, the temperature of the first annealing treatment may be 140-. Thus, a hole injection layer having high hole injection efficiency can be obtained relatively easily.
According to some embodiments of the present invention, a material forming the hole injection layer is not particularly limited, and for example, the material forming the hole injection layer may be PEDOT, PVK, or other commercially available compounds suitable for the hole injection layer.
S300: forming a hole transport layer on the side of the hole injection layer away from the anode
According to some embodiments of the invention, in the step, a hole transport layer is formed on a side of the hole injection layer away from the anode. The method of forming the hole transport layer is not particularly limited, and for example, a second spin coating treatment may be performed on the side of the hole injection layer remote from the anode to form a preformed hole transport layer, and a second annealing treatment may be performed on the preformed hole transport layer to form the hole transport layer. Thereby, holes in the hole injection layer are transferred to the light-emitting layer through the hole transport layer.
According to some embodiments of the present invention, the rotation speed and time of the second spin-coating process are not particularly limited, for example, the rotation speed of the second spin-coating process may be 3000-3500rpm, and the time of the second spin-coating process may be 40-50 s. Thus, a hole transport layer having an appropriate thickness can be obtained relatively easily.
According to some embodiments of the present invention, the temperature and time of the second annealing treatment are not particularly limited, for example, the temperature of the second annealing treatment is 140-160 ℃, and the time of the second annealing treatment is 20-40 min. Thus, a hole transport layer having high hole transport efficiency can be obtained relatively easily.
According to some embodiments of the present invention, a material forming the hole transport layer is not particularly limited, and for example, the material forming the hole transport layer may be TFB, PMA, or other commercially available compounds suitable for the hole transport layer.
S400: forming a light-emitting layer on the side of the hole transport layer far away from the hole injection layer
According to some embodiments of the present invention, because electrons and holes need to be coupled in the light emitting layer to form excitons, the excitons radiate transitions, emitting photons, releasing energy. The transmission rate of the electrons is higher than that of the holes, so that the number of carriers in the light-emitting layer is unbalanced, and the phenomenon that the electrons are majority and the holes are minority occurs. In this application, a light-emitting layer is formed in this step on the side of the hole transport layer away from the hole injection layer, wherein the material forming the light-emitting layer may be a quantum dot light-emitting material.
According to some embodiments of the present invention, a method of forming the light emitting layer is not particularly limited, and for example, a third spin coating process may be performed on a side of the hole transport layer away from the hole injection layer to form the light emitting layer. According to some embodiments of the present invention, the rotation speed and time of the third spin-coating process are not particularly limited, for example, the rotation speed of the third spin-coating process may be 2000-3000rpm, and the time of the third spin-coating process may be 40-50 s. Thus, a light-emitting layer having an appropriate thickness can be obtained relatively easily.
According to some embodiments of the present invention, a material forming the light emitting layer is not particularly limited, and for example, the material forming the light emitting layer may be ZnCdS, CdSe, lnAlAs, or other commercially available compounds suitable for the light emitting layer.
S500: forming an electron transport layer on the side of the light-emitting layer away from the hole transport layer
According to some embodiments of the present invention, an electron transport layer is formed on the side of the light emitting layer away from the hole transport layer in this step, and the material for forming the electron transport layer may be the electron transport layer material prepared by the foregoing method, and is not described herein again.
According to some embodiments of the present invention, the method of forming the electron transport layer is not particularly limited, and for example, a fourth spin coating process may be performed on the side of the light emitting layer away from the hole transport layer to form a pre-formed electron transport layer, and a third annealing process may be performed on the pre-formed electron transport layer to form the electron transport layer. Thus, an electron transport layer having a relatively low electron transport rate can be obtained.
According to some embodiments of the present invention, the rotation speed and time of the fourth spin-coating process are not particularly limited, for example, the rotation speed of the fourth spin-coating process may be 2000-3000rpm, and the time of the fourth spin-coating process may be 40-50 s. Thus, an electron transport layer having an appropriate thickness can be obtained relatively easily.
According to some embodiments of the present invention, the temperature and time of the third annealing treatment are not particularly limited, for example, the temperature of the third annealing treatment may be 70 to 90 ℃, and the time of the third annealing treatment may be 20 to 40 min. Thereby, electrons of the cathode are transferred to the organic light emitting layer through the electron transport layer.
S600: forming a cathode on the side of the electron transport layer far from the luminescent layer
According to some embodiments of the present invention, a cathode is formed in this step on a side of the electron transport layer away from the light emitting layer, and a material forming the cathode is not particularly limited, and for example, the material forming the cathode may be an Al film or an IZO film. Specifically, the Al film may be formed by a vacuum evaporation process, or the IZO film may be formed by a magnetron sputtering process.
In order to prevent external moisture from entering the inside of the QLED device and improve the service life of the QLED device, referring to fig. 3, the step of preparing the QLED device may further include:
s700: forming an encapsulation layer on the cathode side far away from the electron transport layer
According to some embodiments of the present invention, the encapsulation layer is formed on the side of the cathode away from the electron transport layer in this step, and the method for forming the encapsulation layer is not particularly limited, for example, a pre-cured adhesive layer may be provided on the side of the cathode away from the electron transport layer, and the pre-cured adhesive layer may be subjected to light treatment to form the encapsulation layer. The corrosion of external water and oxygen to the inner structure of the QLED device can be effectively prevented through the arrangement of the packaging layer, and the structural stability and the durability of the QLED are improved.
According to some embodiments of the present invention, the kind of material forming the pre-cured glue layer is not particularly limited, and for example, the material forming the pre-cured glue layer may be a UV resin so that it can be cured by an ultraviolet light irradiation process. The time of the ultraviolet light treatment may be 30 seconds. Therefore, the QLED device with good packaging performance can be obtained relatively simply.
In yet another aspect of the present invention, the present invention provides a QLED device prepared by the foregoing method. Therefore, the QLED device has all the features and advantages of the foregoing fabrication method, and will not be described herein again.
According to some embodiments of the present invention, referring to fig. 4, the QLED device includes: the light emitting layer 500 is positioned on one side of the hole injection layer 400, the light emitting layer 500 is positioned on one side of the hole transport layer 400, which is far away from the hole injection layer 300, the electron transport layer 600 is positioned on one side of the light emitting layer 500, which is far away from the hole transport layer 400, the electron transport layer 700 is positioned on one side of the electron transport layer 600, which is far away from the light emitting layer 500, and the cathode 700 is positioned on one side of the electron transport layer 600, which is far away from the light emitting layer 500, wherein the material of the electron transport layer 600 is the electron transport layer material prepared by the method.
According to some embodiments of the present invention, the structure of the QLED device is not particularly limited, for example, referring to fig. 5, on the side of the cathode 700 away from the electron transport layer 600, an encapsulation layer 800 may be further provided, and the encapsulation layer can effectively block external water and oxygen from corroding the internal structure of the QLED device, thereby improving the structural stability and durability of the QLED.
According to some embodiments of the present invention, the material of each layer in the QLED device is not particularly limited, for example, the material of the hole injection layer may include PEDOT, the material of the hole transport layer may include TFB, and the material of the light emitting layer may include ZnCdS. Thereby, the light emitting efficiency of the QLED device can be further improved.
In yet another aspect of the present invention, the present invention provides a display apparatus comprising the aforementioned QLED device. Therefore, the display device has all the features and advantages of the QLED device, and will not be described in detail herein.
The following embodiments are provided to illustrate the present application, and should not be construed as limiting the scope of the present application. The examples, where specific techniques or conditions are not indicated, are to be construed according to the techniques or conditions described in the literature in the art or according to the product specifications. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available.
Experimental example 1:
1. preparing an electron transport layer material:
(1) preparation of the first solution: ethanol is used as a solvent, ZnO is used as a metal oxide, and a ZnO ethanol solution with the concentration of 30mg/ml is prepared for standby.
(2) Preparation of the second solution: lithium acetate dihydrate and tetramethylammonium hydroxide pentahydrate were added to the aforementioned ZnO solution having a concentration of 30mg/ml in a proportion of Li (2 wt%) and F (35 wt%), respectively.
(3) Preparation of the third solution: the second solution was stirred at room temperature for 1h and filtered for further use.
2. Preparing a QLED device:
(1) a transparent glass substrate with the thickness of 1mm is provided, and an ITO electrode with the sheet resistance of 30 omega/sq is deposited on the surface of the glass substrate and is called an ITO substrate below.
(2) The PEDOT solution was spin-coated on the ITO substrate, followed by annealing treatment to form a hole injection layer. The rotating speed of the first spin coating treatment is 3000rpm, the time of the first spin coating treatment is 45s, the temperature of the first annealing treatment is 150 ℃, and the time of the first annealing treatment is 15 min.
(3) A TFB solution (solvent was chlorobenzene) of 10mg/ml was spin-coated on the hole injection layer, followed by annealing treatment to form a hole transport layer. The rotation speed of the second spin coating treatment was 3500rpm, the time of the second spin coating treatment was 50s, the temperature of the second annealing treatment was 150 ℃, and the time of the second annealing treatment was 30 min.
(4) ZnCdS quantum dots (solvent is OCT) with the concentration of 20mg/ml are spin-coated on the hole transport layer to form a light emitting layer. The rotation speed of the third spin coating process was 2000-3000rpm, and the time of the third spin coating process was 45 seconds.
(5) The electron transport layer material prepared above is spin-coated on the light emitting layer, followed by annealing treatment to form an electron transport layer. The rotation speed of the fourth spin coating treatment is 2500rpm, the time of the fourth spin coating treatment is 40s, the temperature of the third annealing treatment is 80 ℃, and the time of the third annealing treatment is 30 min.
(6) And (4) putting the spin-coated device in the step (5) into evaporation equipment, and evaporating at the speed of 2 angstroms/second to form an AL electrode so as to form a cathode.
(7) And (3) dripping UV resin in the central area of the spin coating surface of the ITO substrate, extruding a cover glass until the thickness is uniform, and then carrying out UV illumination to form a packaging layer. The time of the ultraviolet light treatment was 30 seconds.
Examples 2 to 4
Examples 2-4 were kept consistent with example 1 and used to set up parallel experiments to reduce occasional errors.
Comparative example 1
Comparative example 1 was identical to example 1, except that the ZnO alcohol solution for forming the electron transport layer in comparative example 1 was not added with a lithium source and a fluorine source, i.e., the step (2) in step 1 was not performed, and the ZnO alcohol solution of 30mg/ml was directly spin-coated to form the electron transport layer.
Comparative examples 2 to 4
Comparative examples 2-4 were in agreement with comparative example 1 and used to set up the parallel experiments to reduce occasional errors.
The qe (external quantum efficiency) of the QLED devices in examples 1 to 4 and comparative examples 1 to 4 were tested, and the test results are shown in table 1.
TABLE 1
| Comparative example 1 | Comparative example 2 | Comparative example 3 | Comparative example 4 | Mean value of | |
| EQE | 7.83％ | 8.55％ | 7.90％ | 7.80％ | 8.02％ |
| Example 1 | Example 2 | Example 3 | Example 4 | Mean value of | |
| EQE | 13.55％ | 14.00％ | 13.85％ | 14.20％ | 13.90％ |
Referring to table 1, the EQE of the QLED device was improved from 8.02% to 13.90%. The result shows that by doping a proper amount of Li and F in the metal oxide, the band gap of the metal oxide can be widened, the conduction band position is moved upwards, the electron injection barrier at the interface of the electron transport layer and the cathode is increased, the difficulty of electron injection is increased, the electron mobility of the electron transport layer is accurately regulated and controlled to be matched with the hole mobility of the device, and the balance of carriers is effectively improved. The method for improving the electron transport layer material is simple and easy to implement and has an obvious improvement effect.
In the description of the present invention, the terms "upper", "lower", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention but do not require that the present invention must be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
Reference throughout this specification to the description of "one embodiment," "another embodiment," or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction. In addition, it should be noted that the terms "first" and "second" in this specification are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (15)
1. An electron transport layer material, comprising: a metal oxide doped with a doping element, wherein the doping element comprises Li and F.
2. The electron transport layer material of claim 1, wherein the metal oxide comprises at least one of ZnO and NiO.
3. The electron transport layer material according to claim 1, wherein the mass fraction of the fluorine element in the metal oxide is 25 to 40%, and the mass fraction of the lithium element in the metal oxide is 1 to 5%.
4. A process for preparing an electron transport layer material according to any of claims 1 to 3,
providing a solvent, and adding a solvent to the solvent,
adding a metal oxide to the solvent to form a first solution,
adding a lithium source material and a fluorine source material to the first solution to form a second solution,
the second solution is subjected to a mixing process to form a third solution.
5. The method of claim 4, wherein the solvent comprises at least one of ethyl alcohol and isopropyl alcohol, the lithium source is lithium acetate dihydrate, and the fluorine source is tetramethylammonium hydroxide pentahydrate.
6. The method according to claim 4, wherein the mass fraction of the lithium source material in the second solution is 1 to 3%, and the mass fraction of the fluorine source material in the second solution is 20 to 40%.
7. A method of making a QLED device, comprising:
providing a substrate, wherein an anode is arranged on the substrate and is positioned on one side of the substrate,
forming a hole injection layer on the anode side far away from the substrate,
a hole transport layer is formed on the side of the hole injection layer remote from the anode,
a light-emitting layer is formed on the side of the hole transport layer remote from the hole injection layer,
an electron transport layer is formed on the side of the light-emitting layer remote from the hole transport layer,
a cathode is formed on the side of the electron transport layer away from the light emitting layer,
wherein the material forming the electron transport layer is an electron transport layer material prepared by the method of any one of claims 4 to 6.
8. The method of claim 7, wherein forming the hole injection layer further comprises: performing a first spin coating treatment on one side of the anode, which is far away from the substrate, to form a preformed hole injection layer, and performing a first annealing treatment on the preformed hole injection layer to form the hole injection layer;
preferably, the rotation speed of the first spin coating treatment is 3000-4000rpm, and the time of the first spin coating treatment is 45-60 s;
preferably, the temperature of the first annealing treatment is 140-160 ℃, and the time of the first annealing treatment is 10-20 min.
9. The method of claim 7, wherein forming the hole transport layer further comprises: performing a second spin coating treatment on the side of the hole injection layer away from the anode to form a preformed hole transport layer, and performing a second annealing treatment on the preformed hole transport layer to form the hole transport layer;
preferably, the rotation speed of the second spin coating treatment is 3000-3500rpm, and the time of the second spin coating treatment is 40-50 s;
preferably, the temperature of the second annealing treatment is 140-160 ℃, and the time of the second annealing treatment is 20-40 min.
10. The method of claim 7, wherein forming the light emitting layer further comprises: performing third spin coating treatment on one side of the hole transport layer far away from the hole injection layer to form the light-emitting layer;
preferably, the rotation speed of the third spin coating process is 2000-3000rpm, and the time of the third spin coating process is 40-50 s.
11. The method of claim 7, wherein forming the electron transport layer further comprises: performing a fourth spin coating treatment on the side, away from the hole transport layer, of the light-emitting layer to form a preformed electron transport layer, and performing a third annealing treatment on the preformed electron transport layer to form the electron transport layer;
preferably, the rotation speed of the fourth spin coating treatment is 2000-3000rpm, and the time of the fourth spin coating treatment is 40-50 s;
preferably, the temperature of the third annealing treatment is 70-90 ℃, and the time of the third annealing treatment is 20-40 min.
12. The method of any one of claims 7-11, further comprising: forming an encapsulation layer on a side of the cathode away from the electron transport layer, the forming the encapsulation layer comprising: arranging a pre-cured adhesive layer on one side of the cathode, which is far away from the electron transport layer, and carrying out illumination treatment on the pre-cured adhesive layer to form the packaging layer;
preferably, the material for forming the pre-cured glue layer is UV resin, the illumination treatment is ultraviolet illumination treatment, and the time of the ultraviolet illumination treatment is 30 s.
13. A QLED device prepared by the method of any one of claims 7-12.
14. A QLED device according to claim 13, wherein the material of the hole injection layer comprises at least one of PEDOT and PVK, the material of the hole transport layer comprises at least one of TFB and PMA, and the material of the light emitting layer comprises at least one of ZnCdS, CdSe and lnAlAs.
15. A display apparatus comprising the QLED device according to claim 13 or 14.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101824597A (en) * | 2010-04-13 | 2010-09-08 | 浙江大学 | Method for growing p-type ZnO crystal thin film by Li-F codoping |
| CN104638108A (en) * | 2015-01-23 | 2015-05-20 | 华东师范大学 | Modified electron transport layer and perovskite solar cell |
| CN106784346A (en) * | 2016-12-08 | 2017-05-31 | Tcl集团股份有限公司 | Metal oxide modified QLED devices and preparation method thereof |
| CN112331784A (en) * | 2019-12-17 | 2021-02-05 | 广东聚华印刷显示技术有限公司 | Film and use thereof |
-
2022
- 2022-02-15 CN CN202210137782.8A patent/CN114695804A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101824597A (en) * | 2010-04-13 | 2010-09-08 | 浙江大学 | Method for growing p-type ZnO crystal thin film by Li-F codoping |
| CN104638108A (en) * | 2015-01-23 | 2015-05-20 | 华东师范大学 | Modified electron transport layer and perovskite solar cell |
| CN106784346A (en) * | 2016-12-08 | 2017-05-31 | Tcl集团股份有限公司 | Metal oxide modified QLED devices and preparation method thereof |
| CN112331784A (en) * | 2019-12-17 | 2021-02-05 | 广东聚华印刷显示技术有限公司 | Film and use thereof |
Non-Patent Citations (1)
| Title |
|---|
| 张双双: "Li、F掺杂ZnO作为电子传输层QLED器件的构筑及性能研究", 《工程科技I辑》, 28 February 2021 (2021-02-28), pages 20 - 54 * |
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