CN109585698B - Method for preparing low-voltage driving organic light-emitting diode with p-i-n structure by solution method - Google Patents
Method for preparing low-voltage driving organic light-emitting diode with p-i-n structure by solution method Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
Abstract
A method for preparing a low-voltage driving organic light-emitting diode (OLED) with a p-i-n structure by a solution method is characterized in that an OLED device is formed by overlapping a transparent ITO glass substrate, a p-type doping transmission layer, a light-emitting layer, an n-type doping transmission layer, an electronic buffer layer and a metal back electrode. According to the invention, the composite material PTAA AgNWs is introduced into the OLED device, so that the transmission performance of a hole transmission layer can be effectively improved, and a hole injection barrier is reduced, thereby reducing the driving voltage of the device; SnS is a PEI prepared by solution method2QDs acts as an electron transport layer for OLED devices, further improving the injection and transport capabilities of electrons in the device. Finally, the driving voltage of the device is reduced, and meanwhile, the luminous efficiency of the OLED device is effectively improved.
Description
Technical Field
The invention belongs to the technical field of organic electroluminescence, and particularly relates to a method for preparing a low-voltage driving organic light-emitting diode with a p-i-n structure by a solution method.
Background
Organic electroluminescent devices (OLEDs) have been widely used in the display and lighting fields due to their advantages of wide viewing angle, self-luminescence, fast response time, flexibility, etc. In the OLED with the p-i-n structure, electrons and holes can be effectively transmitted into the light-emitting layer through the n-type doped transmission layer and the p-type doped transmission layer respectively, so that the recombination probability of current carriers is greatly improved, and the light-emitting efficiency of the device is higher. However, the conventional p-i-n structured OLED is prepared by a vacuum thermal evaporation process. However, the process for preparing the doped functional thin film by using the vacuum thermal evaporation method is very complex and has high cost, and particularly, the doping proportion of the host and the guest with low concentration is difficult to accurately control, so that the further development of the multilayer-structure OLED is restricted.
Compared with the traditional vacuum thermal evaporation process, the solution method for preparing the OLED with the p-i-n structure has the advantages of simple preparation process, low cost, controllable low-concentration doping ratio and the like, and if the composite transmission material with good film forming property and high carrier mobility is prepared by the solution method and is applied to the OLED with the p-i-n structure, the luminous performance of the OLED prepared by the solution method is expected to be further improved.
Disclosure of Invention
The invention aims to solve the problems of low carrier mobility and poor film forming property in a transport layer prepared by a solution method in the prior art, which cause higher driving voltage and poor luminous performance of a device, and provides a method for preparing an organic light-emitting diode (OLED) with a p-i-n structure by the solution method, wherein the transport performance of a hole transport layer can be effectively improved and a hole injection barrier is reduced by introducing a composite material PTAA: AgNWs into the OLED device, so that the driving voltage of the device is reduced; SnS is a PEI prepared by solution method2QDs acts as an electron transport layer for OLED devices, further improving the injection and transport capabilities of electrons in the device. Finally, the driving voltage of the device is reduced, and meanwhile, the luminous efficiency of the OLED device is effectively improved.
The technical scheme of the invention is as follows:
a method for preparing a low-voltage driving organic light-emitting diode with a p-i-n structure by a solution method comprises the following steps:
(1) carrying out surface treatment on the transparent ITO glass substrate with the cleaned surface by using ultraviolet ozone, then transferring the ITO glass substrate into a glove box filled with argon atmosphere, and preparing a p-type doped transmission layer, a light-emitting layer and an n-type doped transmission layer on the ITO glass substrate by adopting a solution method through spin coating in sequence;
the method comprises the steps of firstly, ultrasonically cleaning the transparent ITO glass substrate for 15min by using ethanol, acetone and isopropanol in sequence, then washing the substrate with deionized water, and drying the substrate for 30min at 150 ℃;
(2) and finally, preparing the electronic buffer layer and the metal back electrode by adopting a vacuum evaporation deposition method.
The p-type doped transmission layer in the step (1) is made of poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] doped silver nanowire (PTAA: AgNWs) composite material. The preparation steps of the p-type doped transmission layer are as follows:
weighing poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] (PTAA) powder by an electronic balance, dissolving in a toluene solution, and preparing a PTAA solution with the concentration of 10 mg/ml; silver nanowires (AgNWs) are dispersed in an ethanol solution, and the concentration is 10 mg/ml; uniformly mixing the PTAA solution and the AgNWs solution in a volume ratio of 10-30: 1 to prepare a mixed solution of PTAA and AgNWs; placing an ITO glass substrate on a spin coater, dropwise adding a mixed solution of the PTAA and AgNWs on the ITO glass substrate, spin-coating for 30s at the rotating speed of 1500rpm, and placing the prepared substrate coated with the PTAA and AgNWs thin film on a hot table at 100 ℃ for annealing treatment for 15min, thereby preparing a p-type doped transmission layer thin film with the thickness of the thin film layer of 60nm on the ITO glass substrate.
The spin speed in the spin coating process was 1500rpm, and the spin time was 30 s.
The luminescent layer in the step (1) is made of polyvinyl carbazole doped with tris (2-phenylpyridine) iridium and 2- (4 '-biphenyl) -5- (4' -tert-butylphenyl) -1,3, 4-oxadiazole (PVK: Ir (ppy)3PBD) composite material. The preparation steps of the luminescent layer are as follows: the green phosphorescent material of tris (2-phenylpyridine) iridium (Ir (ppy)3) And 2- (4 '-biphenyl) -5- (4' -tert-butylphenyl) -1,3, 4-oxadiazole (PBD) with electron transport properties were incorporated into a polymer host Polyvinylcarbazole (PVK) to prepare a green light emitting layer in accordance with PVK: Ir (ppy)3PBD (6: 3: 2) is mixed with three materials and dissolved in DMF solution, and the solution is stirred and dissolved for more than 2h at normal temperature to obtain PVK: Ir (ppy)3PBD mixed solution for standby; placing the substrate with the p-type doped transmission layer film on a spin coater, and taking PVK Ir (ppy)3Dropping the PBD mixed solution on a PTAA: AgNWs film, spin-coating at 2000rpm for 30s, and coating the prepared PVK: Ir (ppy)3The substrate of the PBD film is placed on a hot bench at 100 ℃ for annealing treatment for 20min, so that the luminescent layer film with the film thickness of 40nm is prepared.
The spin speed during the spin coating was 2000rpm and the spin time was 30 s.
The n-type doped transmission layer in the step (1) is made of polyethyleneimine doped tin sulfide quantum dots (PEI: SnS)2-QDs). The preparation steps of the n-type doped transmission layer are as follows: SnS is weighed with electronic balance2Dispersing the powder in ethanol solution, and performing ultrasonic treatment for more than 1h to obtain SnS with concentration of 10mg/ml2Suspending liquid; SnS2Centrifuging the suspension at 11000rpm for 40min, and collecting the supernatant to obtain the tin sulfide quantum dots (SnS)2-QDs) solution; then mixing the Polyethyleneimine (PEI) aqueous solution with the concentration of 1.08g/ml and SnS2Uniformly mixing the-QDs solution in a volume ratio of 1: 400-600 to obtain PEI: SnS2-QDs mixed solution; placing the substrate with the p-type doped transport layer and the luminescent layer film obtained in the claim 3 on a spin coater, and taking PEI: SnS2Dropping the mixed solution of-QDs in PVK Ir (ppy)3Spin coating PBD light-emitting layer on the substrate at 3000rpm for 30s, and coating PEI and SnS on the substrate2And (3) placing the substrate of the-QDs thin film on a hot bench at 100 ℃ for annealing treatment for 15min, thereby preparing the n-type doped transmission layer thin film with the thickness of the film layer of 35 nm.
The spin speed in the spin coating process was 3000rpm, and the spin time was 30 s.
The electron buffer layer in the step (2) is lithium fluoride (LiF), and the metal back electrode is aluminum (Al).
The invention has the advantages and beneficial effects that:
(1) according to the invention, the composite material PTAA AgNWs is introduced into the OLED device, so that the transmission performance of a hole transmission layer is effectively improved, and a hole injection barrier is reduced, thereby reducing the driving voltage of the device.
(2) SnS is a PEI prepared by solution method2The QDs are used as an electron transport layer of the OLED device, so that the injection and transport capacity of electrons in the device are further improved, and the luminous efficiency of the OLED device is effectively improved.
(3) The low-voltage driving organic light-emitting diode with the p-i-n structure prepared by the solution method has the advantages of low-voltage driving, high brightness, high efficiency, good stability and simple preparation process.
Drawings
Fig. 1 is a schematic structural view of an organic electroluminescent device.
Fig. 2 is a scanning electron microscope image of AgNWs.
FIG. 3 shows prepared SnS2Transmission electron microscope images of QDs.
Fig. 4 is a physical diagram of the light emitting device.
FIG. 5 is a current density-voltage-light emission luminance curve of light emitting devices prepared by combining PTAA with AgNWs at different ratios (A, B-1, C-1, D-1 in the figure are current density-voltage-light emission luminance curves of light emitting devices prepared in example 1, example 2, example 3 and comparative example 1, respectively).
FIG. 6 is a current efficiency-current density curve of light emitting devices prepared by combining PTAA with AgNWs at different ratios (A, B-1, C-1, D-1 in the figure are current efficiency-current density curves of light emitting devices prepared in example 1, example 2, example 3 and comparative example 1, respectively).
FIG. 7 shows PEI and SnS2Current density-voltage-light emission luminance curves of light-emitting devices compositely prepared with QDs at different ratios (A, B-2, C-2, D-2 in the graph are current density-voltage-light emission luminance curves of light-emitting devices prepared in example 1, example 4, example 5, and comparative example 2, respectively).
FIG. 8 is a drawing showingPEI and SnS2Current efficiency-current density curves of light emitting devices prepared by compounding QDs at different ratios (A, B-2, C-2, D-2 in the figure are current efficiency-current density curves of light emitting devices prepared in example 1, example 4, example 5 and comparative example 2, respectively).
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
Example 1
The method for preparing the low-voltage driving organic light-emitting diode with the p-i-n structure by the solution method comprises the following specific implementation steps:
etching of an ITO glass substrate: chemically etching an ITO glass substrate to form a strip electrode, ultrasonically cleaning the etched ITO glass substrate by using ethanol, acetone and isopropanol for 15min in sequence, washing the substrate by using deionized water, and drying the substrate for 30min at 150 ℃;
preparation of p-type doped transport layer: the PTAA powder (10 mg) was dissolved in the toluene solution by weighing with an electronic balance to prepare a PTAA solution having a concentration of 10 mg/ml. AgNWs were dispersed in ethanol solution at a concentration of 10mg/ml (as shown in FIG. 2). And uniformly mixing the PTAA solution and the AgNWs solution in a volume ratio of 20:1 to prepare a PTAA: AgNWs mixed solution. And (2) placing the ITO glass substrate for later use in the step (1) on a spin coater, dropwise adding a proper amount of mixed solution of PTAA and AgNWs on the ITO glass substrate, spin-coating at 1500rpm for 30s, placing the prepared substrate coated with the film of PTAA and AgNWs on a hot table at 100 ℃ for annealing treatment for 15min, and thus preparing the p-type doped transmission layer film with the film thickness of 60nm on the ITO glass substrate.
3. Preparation of a light-emitting layer: mixing green phosphorescent material Ir (ppy)3And PBD with electron transport property is doped into polymer host PVK to prepare a green light emitting layer according to PVK: Ir (ppy)3PBD (6: 3: 2) is mixed with three materials and dissolved in DMF solution, and the solution is stirred and dissolved for more than 2h at normal temperature to obtain PVK: Ir (ppy)3PBD mixed solution for standby. Placing the substrate with the film obtained in the step 2 on a spin coater, and taking a proper amount of PVK (Ir) (ppy)3The PBD mixed solution was dropped on a PTAA AgNWs film at 2000rpmSpin coating at 30s, and coating the prepared coating with PVK Ir (ppy)3The substrate of the PBD film is placed on a hot bench at 100 ℃ for annealing treatment for 20min, so that the luminescent layer film with the film thickness of 40nm is prepared.
Preparation of n-type doped transport layer: weighing 10mg of SnS by using an electronic balance2Dispersing the powder in ethanol solution, and performing ultrasonic treatment for more than 1h to obtain SnS with concentration of 10mg/ml2And (4) suspending the solution. SnS2Centrifuging the suspension at 11000rpm for 40min, and collecting the supernatant to obtain SnS2QDs solutions (as shown in FIG. 3). Then mixing PEI aqueous solution with SnS, wherein the concentration of PEI aqueous solution is 1.08g/ml2Uniformly mixing the-QDs solution in a volume ratio of 1:500 to obtain PEI/SnS2-QDs mixed solution. Placing the substrate with the film obtained in the step 3 on a spin coater, and taking a proper amount of PEI (polyetherimide)/SnS2Dropping the mixed solution of-QDs in PVK Ir (ppy)3Spin coating PBD film at 3000rpm for 30s, and coating PEI and SnS2And (3) placing the substrate of the-QDs thin film on a hot bench at 100 ℃ for annealing treatment for 15min, thereby preparing the n-type doped transmission layer thin film with the thickness of the film layer of 35 nm.
5. Preparing an electron buffer layer and a metal back electrode: putting the film obtained in the step 4 into a vacuum coating machine, and vacuumizing to 2 multiplied by 10-5Pa, evaporating an electron buffer layer LiF with the thickness of 1nm and a metal Al electrode with the thickness of 120 nm. The effective area of the device is the cross area of the ITO anode and the metal Al cathode, and is 3mm multiplied by 3 mm.
The scanning electron microscope image of AgNWs used in the experiment is shown in FIG. 2, and the model of the scanning electron microscope used is Hitachi SU8010 in Hitachi; prepared SnS2Transmission electron microscope images of QDs see fig. 3, using a transmission electron microscope model JEM-2010 FEF; the photoelectric properties of the prepared OLEDs were tested by a U.S. Keithley 2400 current voltage source and a photresearch PR650 spectral scanning colorimeter.
Example 2
The specific implementation method is the same as that of the embodiment 1 except that the following conditions are different:
preparation of p-type doped transport layer: the PTAA powder (10 mg) was dissolved in the toluene solution by weighing with an electronic balance to prepare a PTAA solution having a concentration of 10 mg/ml. The PTAA solution was mixed well with an AgNWs solution with a concentration of 10mg/ml in a volume ratio of 30: 1. And (2) placing the ITO glass substrate for later use in the step (1) on a spin coater, dropwise adding a proper amount of mixed solution of PTAA and AgNWs on the ITO glass substrate, spin-coating at 1500rpm for 30s, placing the prepared substrate coated with the film of PTAA and AgNWs on a hot table at 100 ℃ for annealing treatment for 15min, and thus preparing the p-type doped transmission layer film with the film thickness of 60nm on the ITO glass substrate.
Example 3
The specific implementation method is the same as that of the embodiment 1 except that the following conditions are different:
preparation of p-type doped transport layer: the PTAA powder (10 mg) was dissolved in the toluene solution by weighing with an electronic balance to prepare a PTAA solution having a concentration of 10 mg/ml. The PTAA solution and AgNWs solution with the concentration of 10mg/ml are mixed evenly in the volume ratio of 10: 1. And (2) placing the ITO glass substrate for later use in the step (1) on a spin coater, dropwise adding a proper amount of mixed solution of PTAA and AgNWs on the ITO glass substrate, spin-coating at 1500rpm for 30s, placing the prepared substrate coated with the film of PTAA and AgNWs on a hot table at 100 ℃ for annealing treatment for 15min, and thus preparing the p-type doped transmission layer film with the film thickness of 60nm on the ITO glass substrate.
Example 4
The specific implementation method is the same as that of the embodiment 1 except that the following conditions are different:
preparation of an n-type doped transport layer: weighing 10mg of SnS by using an electronic balance2Dispersing the powder in ethanol solution, and performing ultrasonic treatment for more than 1h to obtain SnS with concentration of 10mg/ml2And (4) suspending the solution. SnS2Centrifuging the suspension at 11000rpm for 40min, and collecting the supernatant to obtain SnS2QDs solutions (as shown in FIG. 3). Then mixing PEI aqueous solution with SnS, wherein the concentration of PEI aqueous solution is 1.08g/ml2the-QDs solution was mixed well in a volume ratio of 1: 400. Placing the substrate of the film obtained in the step 3 on a spin coater, and taking a proper amount of PEI (polyetherimide)/SnS2Dropping the mixed solution of-QDs in PVK Ir (ppy)3Spin coating PBD film at 3000rpm for 30s, and coating PEI and SnS2The substrate of the-QDs thin film is placed on a hot stage at 100 ℃ for annealing treatment for 15min, thereby preparingAnd the film thickness is 35 nm.
Example 5
The specific implementation method is the same as that of the embodiment 1 except that the following conditions are different:
preparation of an n-type doped transport layer: weighing 10mg of SnS by using an electronic balance2Dispersing the powder in ethanol solution, and performing ultrasonic treatment for more than 1h to obtain SnS with concentration of 10mg/ml2And (4) suspending the solution. SnS2Centrifuging the suspension at 11000rpm for 40min, and collecting the supernatant to obtain SnS2QDs solutions (as shown in FIG. 3). Then, an aqueous PEI solution having a concentration of 1.08g/ml was mixed in a volume ratio of 1: 600. Placing the substrate of the film obtained in the step 3 on a spin coater, and taking a proper amount of PEI (polyetherimide)/SnS2Dropping the mixed solution of-QDs in PVK Ir (ppy)3Spin coating PBD film at 3000rpm for 30s, and coating PEI and SnS2And (3) placing the substrate of the-QDs thin film on a hot bench at 100 ℃ for annealing treatment for 15min, thereby preparing the n-type doped transmission layer thin film with the thickness of the film layer of 35 nm.
Comparative example 1
The specific implementation method is the same as that of the embodiment 1 except that the following conditions are different:
preparation of hole transport layer: the PTAA powder (10 mg) was dissolved in the toluene solution by weighing with an electronic balance to prepare a PTAA solution having a concentration of 10 mg/ml. And (2) placing the ITO glass substrate prepared in the step (1) on a spin coater, dropwise adding a proper amount of PTAA solution on the ITO glass substrate, spin-coating at 1500rpm for 30s, and placing the prepared substrate coated with the PTAA film on a hot table at 100 ℃ for annealing treatment for 15min to prepare the hole transport layer film.
Comparative example 2
The specific implementation method is the same as that of the embodiment 1 except that the following conditions are different:
preparation of an electron transport layer: an aqueous solution of PEI with a concentration of 1.08g/ml was mixed homogeneously with ethanol in a volume ratio of 1: 500. Placing the substrate of the film obtained in the step 3 on a spin coater, taking a proper amount of PEI solution, and dropwise adding the PEI solution on PVK (Ir) (ppy)3Spin-coating PBD film at 3000rpm for 30s, and placing the prepared PEI film-coated substrate on a substrateAnd (3) annealing treatment is carried out on a hot bench at 100 ℃ for 15min, so that the electron transport layer film is prepared.
FIG. 5 is a current density-voltage-light emission luminance curve of light emitting devices prepared by combining PTAA with AgNWs at different ratios (A, B-1, C-1, D-1 in the figure are current density-voltage-light emission luminance curves of light emitting devices prepared in example 1, example 2, example 3 and comparative example 1, respectively); FIG. 6 is a current efficiency-current density curve of light emitting devices prepared by combining PTAA with AgNWs at different ratios (A, B-1, C-1, D-1 in the figure are current efficiency-current density curves of light emitting devices prepared in example 1, example 2, example 3 and comparative example 1, respectively). The figure shows that: with the increase of AgNWs doping concentration, the transmission performance of a hole transmission layer of the device is improved, and the reasonable volume ratio of the PTAA to the AgNWs is 20: 1. With further increase of AgNWs doping concentration, the device conductivity increases, but the stability becomes worse.
FIG. 7 shows PEI and SnS2Current density-voltage-light emission luminance curves of light-emitting devices compositely prepared with QDs at different ratios (A, B-2, C-2, D-2 in the graph are current density-voltage-light emission luminance curves of light-emitting devices prepared in example 1, example 4, example 5 and comparative example 2, respectively); FIG. 8 shows PEI and SnS2Current efficiency-current density curves of light emitting devices prepared by compounding QDs at different ratios (A, B-2, C-2, D-2 in the figure are current efficiency-current density curves of light emitting devices prepared in example 1, example 4, example 5 and comparative example 2, respectively). The figure shows that: following SnS2Increase of doping concentration of QDs, improvement of electron injection and transport properties in devices, PEI SnS2A reasonable volume ratio of-QDs is 1: 500. But when SnS2As the QDs doping concentration is further increased, the current density of the device increases significantly. This is because SnS2If the QDs doping concentration is too high, the roughness of the film will become large, which will result in increased leakage current of the device.
AgNWs doping concentration in p-type doped transport layer and SnS in n-type doped transport layer for device in example 12The QDs doping concentrations are all experimentally derived reasonable doping concentrations. The device of example 1 had a 2.8V starting voltage and brightnessIs 1000cd/m2The voltage at the time of driving was 6.49V, and the luminance at the time of driving voltage was about 43000cd/m2The maximum current efficiency and the maximum luminance of the device were 15.85cd/A and 43581cd/m, respectively2. The maximum brightness and current efficiency of the device in example 1 are significantly improved compared to the devices of comparative examples 1 and 2.
The above results show that: by introducing the composite material PTAA AgNWs into the OLED device, the transmission performance of a hole transmission layer can be effectively improved, and a hole injection barrier is reduced, so that the driving voltage of the device is reduced; SnS is a PEI prepared by solution method2QDs acts as an electron transport layer for OLED devices, further improving the injection and transport capabilities of electrons in the device. Finally, the driving voltage of the device is reduced, and meanwhile, the luminous efficiency of the OLED device is effectively improved.
Claims (5)
1. A method for preparing a low-voltage driving organic light-emitting diode with a p-i-n structure by a solution method is characterized by comprising the following steps:
(1) processing the surface-cleaned transparent ITO glass substrate by using ultraviolet ozone, transferring the ITO glass substrate into a glove box filled with argon atmosphere, and spin-coating the ITO glass substrate in sequence by adopting a solution method to prepare a p-type doped transmission layer, a luminescent layer and an n-type doped transmission layer; the p-type doped transmission layer is made of a PTAA (Polybutylece terephthalate) AgNWs composite material and is formed by uniformly mixing a PTAA solution with the concentration of 10mg/ml and an AgNWs solution with the concentration of 10mg/ml in a volume ratio of 10-30: 1; the material of the light-emitting layer is PVK Ir (ppy)3PBD composite material according to PVK Ir (ppy)3PBD (PBD) is formed by mixing three materials according to the mass ratio of 6:3:2 and dissolving the three materials in a DMF solution; the n-type doped transmission layer is made of PEI and SnS2the-QDs composite material is prepared by uniformly mixing a Polyethyleneimine (PEI) aqueous solution with the concentration of 1.08g/ml and a SnS2-QDs solution in a volume ratio of 1: 400-600;
(2) and finally, preparing the electronic buffer layer and the metal back electrode by adopting a vacuum evaporation deposition method.
2. The method for preparing the low-voltage driving organic light emitting diode with the p-i-n structure by the solution method according to claim 1, wherein the p-type doped transport layer is prepared by the following steps: weighing poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] (PTAA) powder by an electronic balance, dissolving in a toluene solution, and preparing a PTAA solution with the concentration of 10 mg/ml; silver nanowires (AgNWs) are dispersed in an ethanol solution, and the concentration is 10 mg/ml; uniformly mixing the PTAA solution and the AgNWs solution in a volume ratio of 10-30: 1 to prepare a mixed solution of PTAA and AgNWs; placing an ITO glass substrate on a spin coater, dropwise adding a mixed solution of the PTAA and AgNWs on the ITO glass substrate, spin-coating for 30s at the rotating speed of 1500rpm, and placing the prepared substrate coated with the PTAA and AgNWs thin film on a hot table at 100 ℃ for annealing treatment for 15min, thereby preparing a p-type doped transmission layer thin film with the thickness of the thin film layer of 60nm on the ITO glass substrate.
3. The method for preparing a low voltage driven organic light emitting diode of p-i-n structure according to claim 2, wherein the light emitting layer is prepared by the following steps: the green phosphorescent material of tris (2-phenylpyridine) iridium (Ir (ppy)3) And 2- (4 '-biphenyl) -5- (4' -tert-butylphenyl) -1,3, 4-oxadiazole (PBD) with electron transport properties were incorporated into a polymer host Polyvinylcarbazole (PVK) to prepare a green light emitting layer in accordance with PVK: Ir (ppy)3PBD (6: 3: 2) is mixed with three materials and dissolved in DMF solution, and the solution is stirred and dissolved for more than 2h at normal temperature to obtain PVK: Ir (ppy)3PBD mixed solution for standby; placing the substrate with the p-type doped transmission layer film obtained in the claim 2 on a spin coater, taking PVK: Ir (ppy)3Dropping the PBD mixed solution on a PTAA: AgNWs film, spin-coating at 2000rpm for 30s, and coating the prepared PVK: Ir (ppy)3The substrate of the PBD film is placed on a hot bench at 100 ℃ for annealing treatment for 20min, so that the luminescent layer film with the film thickness of 40nm is prepared.
4. The method for preparing the low-voltage driving organic light emitting diode with the p-i-n structure by the solution method according to claim 3, wherein the n-type doped transport layer is prepared by the following steps: SnS is weighed with electronic balance2Dispersing the powder in ethanolIn the solution, the SnS with the concentration of 10mg/ml is prepared by ultrasonic treatment for more than 1h2Suspending liquid; SnS2Centrifuging the suspension at 11000rpm for 40min, and collecting the supernatant to obtain the tin sulfide quantum dots (SnS)2-QDs) solution; then mixing the Polyethyleneimine (PEI) aqueous solution with the concentration of 1.08g/ml and SnS2Uniformly mixing the-QDs solution in a volume ratio of 1: 400-600 to obtain PEI: SnS2-QDs mixed solution; placing the substrate with the p-type doped transport layer and the luminescent layer film obtained in the claim 3 on a spin coater, and taking PEI: SnS2Dropping the mixed solution of-QDs in PVK Ir (ppy)3Spin coating PBD light-emitting layer on the substrate at 3000rpm for 30s, and coating PEI and SnS on the substrate2And (3) placing the substrate of the-QDs thin film on a hot bench at 100 ℃ for annealing treatment for 15min, thereby preparing the n-type doped transmission layer thin film with the thickness of the film layer of 35 nm.
5. The method for preparing a low voltage driven organic light emitting diode of a p-i-n structure according to any one of claims 1 to 4, wherein: and (3) the electronic buffer layer in the step (2) is lithium fluoride (LiF), and the metal back electrode is aluminum (Al).
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