CN114695231A - Bonding method of semiconductor wafer - Google Patents
Bonding method of semiconductor wafer Download PDFInfo
- Publication number
- CN114695231A CN114695231A CN202011596428.9A CN202011596428A CN114695231A CN 114695231 A CN114695231 A CN 114695231A CN 202011596428 A CN202011596428 A CN 202011596428A CN 114695231 A CN114695231 A CN 114695231A
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- CN
- China
- Prior art keywords
- glue
- semiconductor wafer
- bubbles
- vacuum chamber
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000003292 glue Substances 0.000 claims abstract description 61
- 239000000853 adhesive Substances 0.000 claims abstract description 5
- 230000001070 adhesive effect Effects 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 47
- 230000008030 elimination Effects 0.000 claims 1
- 238000003379 elimination reaction Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a bonding method of a semiconductor wafer, which comprises the following steps: before the semiconductor wafer is bonded by using UV glue and the UV glue is not cured, fixing the semiconductor wafer on a rotating table in a vacuum chamber; wherein the temperature of the rotating platform is stabilized at 75-100 ℃; vacuumizing the vacuum chamber by a vacuum device to ensure that the vacuum degree in the vacuum chamber is stabilized at-1.02 MPa to-0.98 MPa; the semiconductor wafer is driven to rotate through the rotating table, and ultrasonic waves are emitted through the ultrasonic wave generating device to eliminate bubbles in the UV glue; wherein the rotating speed of the rotating platform is 800rmp, and the working frequency of the ultrasonic wave generating device is 60 KHz; and curing the UV adhesive after the bubbles are eliminated. By adopting the technical scheme of the invention, air bubbles in the UV glue can be effectively eliminated, so that the semiconductor wafer is firmly bonded, and the product quality is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a bonding method of a semiconductor wafer.
Background
Semiconductor wafers are typically cut, ground, and otherwise processed during processing, which requires the semiconductor wafer to be bonded to a ceramic substrate.
The traditional bonding method is to use shadowless glue (UV glue) for bonding, however, in actual use, air bubbles are easy to appear in the glue, so that the bonding is not firm, and the product quality is affected.
Disclosure of Invention
The technical problem to be solved by the embodiments of the present invention is to provide a method for bonding a semiconductor wafer, which can effectively eliminate air bubbles in UV glue, so that the semiconductor wafer is firmly bonded, thereby improving the product quality.
In order to solve the above technical problem, an embodiment of the present invention provides a method for bonding a semiconductor wafer, including:
before the semiconductor wafer is bonded by using UV glue and the UV glue is not cured, fixing the semiconductor wafer on a rotating table in a vacuum chamber; wherein the temperature of the rotating platform is stabilized at 75-100 ℃;
vacuumizing the vacuum chamber by a vacuum device to ensure that the vacuum degree in the vacuum chamber is stabilized at-1.02 MPa to-0.98 MPa;
the semiconductor wafer is driven to rotate by the rotating platform, and ultrasonic waves are emitted by the ultrasonic wave generating device to eliminate bubbles in the UV glue; wherein the rotating speed of the rotating platform is 800rmp, and the working frequency of the ultrasonic wave generating device is 60 KHz;
and curing the UV adhesive after the bubbles are eliminated.
Further, before the curing treatment of the UV glue after the air bubbles are eliminated, the method further comprises:
and removing the UV glue overflowing from the edge of the semiconductor wafer.
Further, the curing treatment of the UV glue after the bubbles are eliminated specifically includes:
and (3) placing the semiconductor wafer without the bubbles in the UV glue under an ultraviolet lamp for irradiation so as to cure the UV glue.
Compared with the prior art, the embodiment of the invention provides a bonding method of a semiconductor wafer, wherein before the semiconductor wafer is bonded by using UV glue and the UV glue is not cured, the semiconductor wafer is fixed on a rotating table in a vacuum chamber, the temperature of the rotating table is stabilized at 75-100 ℃, the vacuum chamber is vacuumized by a vacuum device to ensure that the vacuum degree in the vacuum chamber is stabilized at-1.02 MPa to-0.98 MPa, then the rotating table drives the semiconductor wafer to rotate, ultrasonic waves are emitted by an ultrasonic wave generating device to eliminate bubbles in the UV glue, and finally the UV glue after the bubbles are eliminated is cured, so that the bubbles in the UV glue can be effectively eliminated, the semiconductor wafer is bonded firmly, and the product quality is improved.
Drawings
Fig. 1 is a flowchart of a preferred embodiment of a method for bonding a semiconductor wafer according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without any inventive step, are within the scope of the present invention.
An embodiment of the present invention provides a method for bonding a semiconductor wafer, which is a flowchart of a preferred embodiment of the method for bonding a semiconductor wafer according to the present invention, as shown in fig. 1, and the method includes steps S11 to S14:
step S11, before the semiconductor wafer is bonded by the UV glue and the UV glue is not cured, fixing the semiconductor wafer on a rotating table in a vacuum chamber; wherein the temperature of the rotating platform is stabilized at 75-100 ℃;
step S12, vacuumizing the vacuum chamber through a vacuum device to ensure that the vacuum degree in the vacuum chamber is stabilized at-1.02 MPa to-0.98 MPa;
step S13, driving the semiconductor wafer to rotate through the rotating platform, and sending out ultrasonic waves through the ultrasonic wave generating device to eliminate bubbles in the UV glue; wherein the rotating speed of the rotating platform is 800rmp, and the working frequency of the ultrasonic wave generating device is 60 KHz;
and step S14, curing the UV adhesive after the air bubbles are eliminated.
In specific implementation, firstly, carrying out bonding treatment on a semiconductor wafer by using UV glue, fixing the semiconductor wafer on a rotary table in a vacuum chamber before the UV glue on the semiconductor wafer is not cured, and keeping the temperature of the rotary table within the range of 75-100 ℃ so as to keep the UV glue in a liquid state; starting a vacuum device (such as a common vacuum pump) to vacuumize the vacuum chamber through the vacuum device, so that the vacuum degree in the vacuum chamber is kept in the range of-1.02 MPa to-0.98 MPa; then starting the rotating platform, driving the semiconductor wafer to rotate at a high speed at a rotating speed of 800 rpm through the rotating platform, simultaneously starting an ultrasonic wave generating device (such as a common ultrasonic wave generator) and sending out ultrasonic waves at a working frequency of 60KHz through the ultrasonic wave generating device so as to break bubbles in the UV glue and eliminate the bubbles in the UV glue; and finally, curing the UV adhesive without bubbles so as to complete the step of bonding the semiconductor wafer, and transferring to the next procedure for corresponding processing.
It should be noted that, in the vacuum state, the bubbles in the UV glue may be broken in the glue because the internal pressure of the bubbles is greater than the external pressure; meanwhile, the temperature of the rotary table is kept within the range of 75-100 ℃, so that the UV glue is kept in a liquid state, and in a vacuum state, the glue is close to a boiling point, bubbles in the UV glue are more active, and the bubbles in the UV glue are more easily rotated out when the rotary table rotates at a high speed, so that the bubbles in the UV glue are also favorably broken; further, the bubble breakage in the UV glue can be accelerated by the ultrasonic vibration emitted by the ultrasonic wave generating device, and the bubble breakage can be caused at any position in the UV glue.
As an improvement of the above scheme, before the curing treatment is performed on the UV glue after the air bubbles are eliminated, the method further includes:
and removing the UV glue overflowing from the edge of the semiconductor wafer.
Specifically, with the above embodiment, when the rotating platform is started to drive the semiconductor wafer to rotate at a high speed, the excess UV glue on the semiconductor wafer may also overflow from the bonding edge of the semiconductor wafer, so that the UV glue overflowing from the edge of the semiconductor wafer needs to be cleaned before the UV glue after the bubbles are eliminated is cured, for example, the UV glue overflowing may be cleaned by alcohol wiping.
As an improvement of the above scheme, the curing treatment of the UV glue after the bubbles are eliminated specifically includes:
and (3) placing the semiconductor wafer without the bubbles in the UV glue under an ultraviolet lamp for irradiation, so that the UV glue is cured.
Specifically, with the above embodiment, after eliminating the bubbles in the UV glue, the semiconductor wafer can be placed under an ultraviolet lamp, and the chemical change occurs by light irradiation, so that the UV glue is converted from a liquid state to a solid state, thereby completing the curing.
In summary, according to the bonding method for the semiconductor wafer provided by the embodiment of the present invention, before the semiconductor wafer is bonded by using the UV glue and the UV glue is not cured, the semiconductor wafer is fixed on the rotary table in the vacuum chamber, the temperature of the rotary table is stabilized at 75 ℃ to 100 ℃, the vacuum chamber is firstly vacuumized by the vacuum device, so that the vacuum degree in the vacuum chamber is stabilized at-1.02 MPa to-0.98 MPa, then the rotary table drives the semiconductor wafer to rotate, the ultrasonic wave is emitted by the ultrasonic wave generating device to eliminate bubbles in the UV glue, and finally the UV glue with the bubbles eliminated is cured, so that the bubbles in the UV glue can be effectively eliminated, the semiconductor wafer is bonded firmly, and the product quality is improved.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (3)
1. A method for bonding a semiconductor wafer, comprising:
before the semiconductor wafer is bonded by using UV glue and the UV glue is not cured, fixing the semiconductor wafer on a rotating table in a vacuum chamber; wherein the temperature of the rotating platform is stabilized at 75-100 ℃;
vacuumizing the vacuum chamber by a vacuum device to ensure that the vacuum degree in the vacuum chamber is stabilized at-1.02 MPa to-0.98 MPa;
the semiconductor wafer is driven to rotate through the rotating table, and ultrasonic waves are emitted through the ultrasonic wave generating device to eliminate bubbles in the UV glue; wherein the rotating speed of the rotating platform is 800rmp, and the working frequency of the ultrasonic wave generating device is 60 KHz;
and curing the UV adhesive after the bubbles are eliminated.
2. A method of bonding semiconductor wafers as recited in claim 1, wherein before the curing the UV paste after the bubble removal, the method further comprises:
and removing the UV glue overflowing from the edge of the semiconductor wafer.
3. A method as claimed in claim 1, wherein said curing of the UV glue after the elimination of bubbles comprises:
and (3) placing the semiconductor wafer without the bubbles in the UV glue under an ultraviolet lamp for irradiation, so that the UV glue is cured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011596428.9A CN114695231A (en) | 2020-12-29 | 2020-12-29 | Bonding method of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011596428.9A CN114695231A (en) | 2020-12-29 | 2020-12-29 | Bonding method of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114695231A true CN114695231A (en) | 2022-07-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011596428.9A Pending CN114695231A (en) | 2020-12-29 | 2020-12-29 | Bonding method of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114695231A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117457548A (en) * | 2023-12-22 | 2024-01-26 | 北京特思迪半导体设备有限公司 | Wafer paster device and wafer waxless polishing feeding equipment |
-
2020
- 2020-12-29 CN CN202011596428.9A patent/CN114695231A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117457548A (en) * | 2023-12-22 | 2024-01-26 | 北京特思迪半导体设备有限公司 | Wafer paster device and wafer waxless polishing feeding equipment |
| CN117457548B (en) * | 2023-12-22 | 2024-03-22 | 北京特思迪半导体设备有限公司 | Wafer paster device and wafer waxless polishing feeding equipment |
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