CN114695202A - Device and method for enlarging rotary process window in integrated circuit - Google Patents
Device and method for enlarging rotary process window in integrated circuit Download PDFInfo
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- CN114695202A CN114695202A CN202210185239.5A CN202210185239A CN114695202A CN 114695202 A CN114695202 A CN 114695202A CN 202210185239 A CN202210185239 A CN 202210185239A CN 114695202 A CN114695202 A CN 114695202A
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 230000008569 process Effects 0.000 title claims abstract description 25
- 230000000694 effects Effects 0.000 abstract description 5
- 238000001179 sorption measurement Methods 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a device and a method for enlarging a rotary process window in an integrated circuit.A rotary table is provided with a plurality of densely arranged thimbles which can independently lift, wherein each thimble is provided with a sensor; the sensor is used for detecting the distance between the top end of the ejector pin and the back of the wafer, and automatically adjusting the height of the ejector pin based on the detected distance, so that the top end of the ejector pin is tightly attached to the back of the wafer. According to the invention, the turntable which is in contact with the wafer in the photoetching process wafer cleaning unit is designed into a plurality of ejector pins which have a certain radius, are densely distributed, can be independently lifted and lowered and are provided with sensors, the sensors are used for detecting the distance between each ejector pin and the wafer, and the heights of the ejector pins are adjusted so that each ejector pin can be tightly attached to the back surface of the wafer, so that an excellent vacuum adsorption effect is obtained, the phenomenon that the turntable is in poor contact with the wafer due to pollution on the back surface of the wafer or warping of the wafer and can not be effectively adsorbed to cause chip falling/falling in the rotating operation is reduced, and the production efficiency is finally improved.
Description
Technical Field
The present invention relates to the field of semiconductor technology, and more particularly, to a device and method for enlarging a rotating process window in an integrated circuit.
Background
A conventional rotary process turret in integrated circuit processing is shown in fig. 1, and the wafer is rotated at high speed by vacuum-sucking the wafer on a circular turret.
The wafer back surface is often contaminated by particles, especially in the latter half of the process, the contamination of the wafer back particles is more serious, and the particles cause local protrusion on the wafer surface. Because the contact area of the circular turntable and the wafer is large, when the pollution of the particles on the back of the wafer is serious, the turntable can not be completely attached to the back of the wafer, so that the adsorption vacuum degree is reduced, and the wafer is dropped or retreated in the rotating operation
On the other hand, along with the continuous superposition of films on the wafer, the heat treatment process and the like, the wafer is under the action of stress, particularly to the subsequent process, the stress effect can cause the wafer to deform in different degrees, and the warping degree is increased. In this case, the flat turntable cannot be completely attached to the back surface of the wafer, and there is a risk of dropping and withdrawing the wafer during the rotation operation.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide an apparatus and a method for increasing a rotating process window in an integrated circuit, which are used to solve the problem in the prior art that the wafer is not effectively absorbed and the wafer is dropped during the rotating operation due to the poor contact between the turntable and the wafer caused by the back surface contamination of the wafer or the wafer warpage.
To achieve the above and other related objects, the present invention provides an apparatus for increasing a rotating process window in an integrated circuit, comprising:
the rotary table is provided with a plurality of densely distributed thimbles which can independently lift, wherein each thimble is provided with a sensor; the sensor is used for detecting the distance between the top end of the ejector pin and the back of the wafer, and automatically adjusting the height of the ejector pin based on the detected distance, so that the top end of the ejector pin is tightly attached to the back of the wafer.
Preferably, the radius of the turntable is 50mm to 150 mm.
Preferably, each thimble comprises an inner tube and an outer tube sleeved outside the inner tube, wherein the bottom of the outer tube is provided with the sensor, and the top end of the inner tube is provided with a vacuum chuck.
Preferably, the sensor is any one of a gas pressure sensor, a gas sensor or a laser sensor.
The invention also provides a method for increasing a rotating process window in an integrated circuit, which at least comprises the following steps:
providing a rotary table, wherein the rotary table is provided with a plurality of densely distributed thimbles which can independently lift, and each thimble is provided with a sensor; the sensor is used for detecting the distance between the top end of the thimble and the back of the wafer and automatically adjusting the height of the thimble based on the detected distance so that the top end of the thimble is tightly attached to the back of the wafer;
secondly, conveying the wafer to the upper part of the turntable by using a mechanical arm;
step three, providing a set distance value; detecting the distance between each thimble and the back of the wafer by using a sensor arranged on each thimble; comparing the detected distance with the set distance value, and if the detected distance does not accord with the set distance, automatically adjusting the heights of the thimbles based on the detected distance until the distance between the top end of each thimble and the back of the wafer accords with the set distance value;
and fourthly, lifting the rotary table to enable the top end of each thimble to suck the back of the wafer.
Preferably, the method of comparing the detected distance with the set distance value in step three is a difference method and a mean square error method.
Preferably, the method further comprises the step of five: and lowering the rotary table into the groove, and starting the rotary operation.
Preferably, in the fourth step, the vacuum chuck arranged at the top end of each thimble sucks the back surface of the wafer.
As described above, the apparatus and method for increasing the rotating process window in the integrated circuit according to the present invention have the following advantages: according to the invention, the turntable which is in contact with the wafer in the photoetching process wafer cleaning unit is designed into a plurality of ejector pins which have a certain radius, are densely distributed, can be independently lifted and lowered and are provided with sensors, the sensors are used for detecting the distance between each ejector pin and the wafer, and the heights of the ejector pins are adjusted so that each ejector pin can be tightly attached to the back surface of the wafer, so that an excellent vacuum adsorption effect is obtained, the phenomenon that the turntable is in poor contact with the wafer due to pollution on the back surface of the wafer or warping of the wafer and can not be effectively adsorbed to cause chip falling/falling in the rotating operation is reduced, and the production efficiency is finally improved.
Drawings
FIG. 1 is a schematic structural view of a turntable and a plurality of ejector pins densely arranged on the turntable according to the present invention;
FIG. 2 is a schematic view of densely arranged needles in the present invention;
fig. 3 shows a schematic diagram of the sensor structure of the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 3. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
The invention provides a device for enlarging the rotating process window in an integrated circuit, which at least comprises:
the device comprises a rotary table, a plurality of lifting mechanisms and a control system, wherein the rotary table is provided with a plurality of densely arranged and independently lifted thimbles, and each thimble is provided with a sensor; the sensor is used for detecting the distance between the top end of the ejector pin and the back of the wafer, and automatically adjusting the height of the ejector pin based on the detected distance, so that the top end of the ejector pin is tightly attached to the back of the wafer.
As shown in fig. 1, fig. 1 is a schematic structural diagram of a turntable and a plurality of ejector pins densely arranged on the turntable according to the present invention. A plurality of densely arranged and independently liftable thimbles 01 are arranged on the turntable (the three-dimensional turntable in fig. 1), as shown in fig. 2, fig. 2 is a schematic diagram of the densely arranged thimbles in the present invention. As shown in fig. 3, fig. 3 is a schematic diagram of the sensor structure of the present invention. Each thimble is provided with a sensor; the sensor is used for detecting the distance between the top end of the ejector pin and the back of the wafer, and automatically adjusting the height of the ejector pin based on the detected distance, so that the top end of the ejector pin is tightly attached to the back of the wafer.
Further, the radius of the turntable of the present embodiment is 50mm to 150 mm.
Furthermore, each of the ejector pins of this embodiment is composed of an inner tube and an outer tube sleeved outside the inner tube, wherein the bottom of the outer tube is provided with the sensor, and the top end of the inner tube is provided with a vacuum chuck.
Further, the sensor of the present embodiment is any one of a gas pressure sensor, a gas sensor, or a laser sensor.
The invention also provides a method for increasing the rotating process window in an integrated circuit, which at least comprises the following steps:
providing a rotary table, wherein the rotary table is provided with a plurality of densely distributed thimbles which can independently lift, and each thimble is provided with a sensor; the sensor is used for detecting the distance between the top end of the thimble and the back of the wafer and automatically adjusting the height of the thimble based on the detected distance so that the top end of the thimble is tightly attached to the back of the wafer;
secondly, conveying the wafer to the upper part of the turntable by using a mechanical arm;
step three, providing a set distance value; detecting the distance between each thimble and the back of the wafer by using a sensor arranged on each thimble; comparing the detected distance with the set distance value, and if the detected distance does not accord with the set distance, automatically adjusting the heights of the thimbles based on the detected distance until the distance between the top end of each thimble and the back of the wafer accords with the set distance value;
further, the method for comparing the detected distance with the set distance value in the third step of the present embodiment is a difference method and a mean square error method.
And fourthly, lifting the rotary table to enable the top end of each thimble to suck the back of the wafer.
Further, in the fourth step of this embodiment, the vacuum chuck disposed at the top end of each thimble is used to suck the back surface of the wafer.
In summary, the turntable in contact with the wafer in the wafer cleaning unit in the photolithography process is designed into a plurality of ejector pins with a certain radius, which are densely arranged, can independently lift and lower, and are provided with sensors, the sensors are used for detecting the distance between each ejector pin and the wafer, and the heights of the ejector pins are adjusted so that each ejector pin can be tightly attached to the back surface of the wafer, so that an excellent vacuum adsorption effect is obtained, the phenomenon that the turntable is in poor contact with the wafer due to pollution on the back surface of the wafer or warping of the wafer, and the wafer is not effectively adsorbed and falls/retreats in the rotation operation is reduced, and the production efficiency is finally improved. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Those skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (8)
1. An apparatus for increasing a rotating process window in an integrated circuit, comprising:
the rotary table is provided with a plurality of densely distributed thimbles which can independently lift, wherein each thimble is provided with a sensor; the sensor is used for detecting the distance between the top end of the ejector pin and the back of the wafer, and automatically adjusting the height of the ejector pin based on the detected distance, so that the top end of the ejector pin is tightly attached to the back of the wafer.
2. The apparatus of claim 1, wherein the means for increasing a process window comprises: the radius of the turntable is 50mm to 150 mm.
3. The apparatus of claim 1, wherein the means for increasing a process window comprises: each thimble comprises an inner tube and an outer tube sleeved outside the inner tube, wherein the bottom of the outer tube is provided with the sensor, and the top end of the inner tube is provided with a vacuum chuck.
4. The apparatus of claim 1, wherein the means for increasing a process window comprises: the sensor is any one of a gas pressure sensor, a gas sensor or a laser sensor.
5. A method for increasing a rotating process window in an integrated circuit, comprising:
providing a rotary table, wherein the rotary table is provided with a plurality of densely distributed thimbles which can independently lift, and each thimble is provided with a sensor; the sensor is used for detecting the distance between the top end of the thimble and the back of the wafer and automatically adjusting the height of the thimble based on the detected distance so that the top end of the thimble is tightly attached to the back of the wafer;
secondly, conveying the wafer to the upper part of the turntable by using a mechanical arm;
step three, providing a set distance value; detecting the distance between each thimble and the back of the wafer by using a sensor arranged on each thimble; comparing the detected distance with the set distance value, and if the detected distance does not accord with the set distance, automatically adjusting the heights of the thimbles based on the detected distance until the distance between the top end of each thimble and the back of the wafer accords with the set distance value;
and fourthly, lifting the rotary table to enable the top end of each thimble to suck the back of the wafer.
6. The method of increasing a process window of rotation in an integrated circuit of claim 5, wherein: the method of comparing the detected distance with the set distance value in step three is a difference method and a mean square error method.
7. The method of increasing a process window of rotation in an integrated circuit of claim 5, wherein: the method also comprises the following step five: and lowering the rotary table into the groove to start the rotary operation.
8. The method of claim 5, wherein the step of increasing the process window comprises: and in the fourth step, the back surface of the wafer is sucked by a vacuum sucker arranged at the top end of each thimble.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210185239.5A CN114695202A (en) | 2022-02-28 | 2022-02-28 | Device and method for enlarging rotary process window in integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210185239.5A CN114695202A (en) | 2022-02-28 | 2022-02-28 | Device and method for enlarging rotary process window in integrated circuit |
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| Publication Number | Publication Date |
|---|---|
| CN114695202A true CN114695202A (en) | 2022-07-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210185239.5A Pending CN114695202A (en) | 2022-02-28 | 2022-02-28 | Device and method for enlarging rotary process window in integrated circuit |
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| CN (1) | CN114695202A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117512544A (en) * | 2024-01-05 | 2024-02-06 | 上海陛通半导体能源科技股份有限公司 | PVD magnetron sputtering coating equipment |
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| CN1721933A (en) * | 2004-07-09 | 2006-01-18 | 应用材料股份有限公司 | Independently moving substrate supports |
| CN101905434A (en) * | 2009-06-03 | 2010-12-08 | 昭进半导体设备(上海)有限公司 | Rotary grinding sucking disc adjusting mechanism of wafer back grinder |
| CN104570419A (en) * | 2014-12-26 | 2015-04-29 | 深圳市华星光电技术有限公司 | Sucking type carrier and sucking method thereof |
| CN108807233A (en) * | 2018-06-22 | 2018-11-13 | 浙江中纳晶微电子科技有限公司 | The workbench and clamping method of bonding are solved after sheet product bonding |
| CN109411400A (en) * | 2017-08-17 | 2019-03-01 | 长鑫存储技术有限公司 | The method of electrostatic chuck and improvement fragmentation, semiconductor processing platform |
| CN109920719A (en) * | 2017-12-13 | 2019-06-21 | 大量科技（涟水）有限公司 | The secondary levelling means of wafer processing machine |
| CN113078094A (en) * | 2021-03-25 | 2021-07-06 | 深圳中科飞测科技股份有限公司 | Warpage correction method, bearing device and bearing system |
-
2022
- 2022-02-28 CN CN202210185239.5A patent/CN114695202A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1721933A (en) * | 2004-07-09 | 2006-01-18 | 应用材料股份有限公司 | Independently moving substrate supports |
| CN101905434A (en) * | 2009-06-03 | 2010-12-08 | 昭进半导体设备(上海)有限公司 | Rotary grinding sucking disc adjusting mechanism of wafer back grinder |
| CN104570419A (en) * | 2014-12-26 | 2015-04-29 | 深圳市华星光电技术有限公司 | Sucking type carrier and sucking method thereof |
| CN109411400A (en) * | 2017-08-17 | 2019-03-01 | 长鑫存储技术有限公司 | The method of electrostatic chuck and improvement fragmentation, semiconductor processing platform |
| CN109920719A (en) * | 2017-12-13 | 2019-06-21 | 大量科技（涟水）有限公司 | The secondary levelling means of wafer processing machine |
| CN108807233A (en) * | 2018-06-22 | 2018-11-13 | 浙江中纳晶微电子科技有限公司 | The workbench and clamping method of bonding are solved after sheet product bonding |
| CN113078094A (en) * | 2021-03-25 | 2021-07-06 | 深圳中科飞测科技股份有限公司 | Warpage correction method, bearing device and bearing system |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117512544A (en) * | 2024-01-05 | 2024-02-06 | 上海陛通半导体能源科技股份有限公司 | PVD magnetron sputtering coating equipment |
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