CN114686985A - InSb single crystal growth thermal field device capable of reducing pollution and growth method - Google Patents
InSb single crystal growth thermal field device capable of reducing pollution and growth method Download PDFInfo
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- CN114686985A CN114686985A CN202210361675.3A CN202210361675A CN114686985A CN 114686985 A CN114686985 A CN 114686985A CN 202210361675 A CN202210361675 A CN 202210361675A CN 114686985 A CN114686985 A CN 114686985A
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- 239000013078 crystal Substances 0.000 title claims abstract description 158
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims description 6
- 239000011261 inert gas Substances 0.000 claims abstract description 59
- 239000010453 quartz Substances 0.000 claims abstract description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 45
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000004321 preservation Methods 0.000 claims abstract description 32
- 238000007789 sealing Methods 0.000 claims abstract description 32
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 26
- 239000010439 graphite Substances 0.000 claims abstract description 26
- 239000007788 liquid Substances 0.000 claims abstract description 18
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims abstract description 5
- 238000011109 contamination Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000010410 layer Substances 0.000 claims description 13
- 239000011229 interlayer Substances 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000004804 winding Methods 0.000 claims 1
- 230000003749 cleanliness Effects 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000009434 installation Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Inorganic materials O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
Abstract
The invention relates to an InSb monocrystal growth thermal field device capable of reducing pollution, which comprises a monocrystal growth crucible body and a heat preservation module, wherein the monocrystal growth crucible body comprises a graphite crucible, quartz crucible layers are fixedly arranged on the inner side and the outer side of the graphite crucible, and the graphite crucible is hermetically wrapped in the quartz crucible layers; the heat preservation module comprises a quartz sealing cover body, and a heat preservation carbon felt is arranged in the quartz sealing cover body in a sealing manner; the outlet of the inert gas conveying pipe is positioned at the opening on the surface of the single crystal growth crucible body, so that the inert gas in the inert gas conveying pipe is heated and then blown to the liquid level and the crystal surface, and the temperature gradient in the single crystal growth crucible body is reduced; the invention eliminates the pollution source and improves the cleanliness of the single crystal growth environment; the special gas conveying pipeline can reduce the temperature gradient of the liquid level and the crystal surface, and can grow high-quality single crystals with low dislocation density.
Description
Technical Field
The invention belongs to the technical field of semiconductor crystal growth devices, and particularly relates to an InSb single crystal growth thermal field device and a growth method capable of reducing pollution.
Background
InSb is a III-V group compound semiconductor material, has the characteristics of narrow forbidden band width, small electron effective mass and high electron mobility, and the mobility of the InSb is 50000cm at room temperature2V.s, up to 10 at 77K6cm2The high mobility of the/V.s ensures that the infrared detector prepared by using InSb as the substrate has the characteristics of high quantum efficiency and quick response.
In order to obtain InSb single crystals with high mobility, it is necessary to increase the purity of the single crystal material and reduce the influence of impurities and defects. The impurities are mainly oxides such as GaO and Sb2O3、Sb2O5And acceptor defects formed by carbon impurities. O, C, etc. mainly come from In and Sb elements used, heating elements, heat-insulating covers, etc., while the purities of In and Sb elements purchased on the market at present can reach more than 6.5N, which can meet the requirement of high-purity single crystal growth, so the graphite crucible and heat-insulating carbon felt materials as the heating elements are the main sources of impurity pollution such as O, C, etc. Further, since the single crystal grown by the Czochralski single crystal manufacturing method has a large temperature gradient, the stress of the grown single crystal is large, and the dislocation is high, it is necessary to reduce the temperature gradient of the thermal field to grow a high-quality single crystal.
Disclosure of Invention
The invention provides an InSb single crystal growth thermal field device capable of reducing pollution, which adopts a mode of sealing a graphite crucible and a heat-preservation carbon felt in a quartz interlayer to eliminate a pollution source and improve the cleanliness of a single crystal growth environment, and adopts a special inert gas conveying pipeline to heat inert gas and then disperse and blow the inert gas on the surfaces of liquid and crystals to reduce the temperature gradient of the liquid level and the crystals, thereby growing high-quality InSb single crystals.
The technical problem to be solved by the invention is realized by adopting the following technical scheme:
an InSb monocrystal growth thermal field device capable of reducing pollution comprises a monocrystal growth crucible body and a heat preservation module, wherein the monocrystal growth crucible body is positioned inside the heat preservation module;
the single crystal growth crucible body comprises a graphite crucible, quartz crucible layers are fixedly arranged on the inner side and the outer side of the graphite crucible, the graphite crucible is hermetically wrapped in the quartz crucible layers, and the space where the graphite crucible is located is a vacuum environment;
the heat preservation module comprises a quartz sealing cover body, and a heat preservation carbon felt is arranged in the quartz sealing cover body in a sealing manner;
the heat preservation module is arranged in the heat preservation module, the inert gas conveying pipe penetrates through the heat preservation module and is located the inert gas conveying pipe inside the heat preservation module is wound in a spiral mode, an outlet of the inert gas conveying pipe is located at a surface opening of the single crystal growth crucible body, so that the inert gas in the inert gas conveying pipe is blown away on the liquid level and the crystal surface after being heated, and the temperature gradient in the single crystal growth crucible body is reduced.
Further, the graphite crucible is subjected to high vacuum sintering impurity removal treatment.
Furthermore, the inert gas conveying pipe extends from a groove at the bottom of the quartz sealing cover body, then bends upwards, and surrounds the tail end to form an annular structure, and a plurality of air outlets are formed in the annular structure, so that the inert gas is blown on the liquid level and the crystal surface in a surrounding and dispersing manner.
Furthermore, the crucible also comprises a bottom support, and the bottom support is fixedly arranged at the bottom of the single crystal growth crucible body.
Further, still include the supporting seat, the supporting seat with the collet can cooperate the installation, and the realization is right the support of the single crystal growth crucible body.
The single crystal growth crucible body and the heat preservation module are positioned in the single crystal furnace, a switch furnace door is arranged on the single crystal furnace, and an inert gas inlet and outlet structure is arranged on the single crystal furnace, so that the inert gas can replace the air in the single crystal furnace.
Furthermore, the heating device also comprises a heating coil which is arranged on the inner wall of the single crystal furnace and is connected with an electrode, and the heating coil can heat the single crystal growth crucible body.
Furthermore, the quartz sealing cover body is a cylindrical sealing structure with two open ends, and the heat-preservation carbon felt is sealed between the inner interlayer and the outer interlayer of the cylindrical side wall of the quartz sealing cover body.
Further, a seed crystal rod is arranged at the top of the single crystal furnace, penetrates through the single crystal furnace and can be provided with a seed crystal at the tail end.
The method for growing the InSb single crystal by using the InSb single crystal growth thermal field device capable of reducing pollution comprises the following steps of:
putting an InSb polycrystalline raw material into a single crystal growth crucible body;
penetrating an inert gas conveying pipe into the quartz sealing cover body, enabling the inert gas conveying pipe to walk close to the outer side wall of the single crystal growth crucible body, mounting seed crystals at the lower end of a seed crystal rod, adjusting the position, and covering the single crystal growth crucible body with the quartz sealing cover body;
placing a single crystal growth crucible body and a heat preservation module into a single crystal furnace, closing a switch furnace door, and replacing air in the single crystal furnace by inert gas;
starting a heating coil to heat a single crystal growth crucible body, melting the raw materials, and conveying inert gas to the upper part of the quartz crucible through an inert gas conveying pipe;
and controlling a seed rod to extend seed crystals into the liquid level of the molten raw material, and adjusting the temperature to the single crystal growth temperature to perform single crystal growth.
The invention has the advantages and positive effects that:
the graphite crucible and the heat preservation carbon felt are sealed in the quartz interlayer, so that O, C and other impurities cannot volatilize from the graphite crucible and the heat preservation carbon felt, a pollution source is eliminated, and the cleanliness of a single crystal growth environment is improved; the special gas conveying pipeline can reduce the temperature gradient of the liquid level and the crystal surface, and can grow high-quality single crystals with low dislocation density.
Drawings
The technical solutions of the present invention will be described in further detail below with reference to the accompanying drawings and examples, but it should be understood that these drawings are designed for illustrative purposes only and thus do not limit the scope of the present invention. Furthermore, unless otherwise indicated, the drawings are intended to be illustrative of the structural configurations described herein and are not necessarily drawn to scale.
FIG. 1 is a cross-sectional view of the structure of a crystal growth crucible body of an InSb crystal growth thermal field apparatus capable of reducing contamination according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a thermal insulation module of an InSb single crystal growth thermal field device capable of reducing pollution according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of an inert gas delivery pipe of an InSb single crystal growth thermal field device capable of reducing pollution according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view of an InSb single crystal growth thermal field apparatus capable of reducing contamination according to an embodiment of the present invention;
Detailed Description
First, it should be noted that the specific structures, features, advantages, etc. of the present invention will be specifically described below by way of example, but all the descriptions are for illustrative purposes only and should not be construed as limiting the present invention in any way. Furthermore, any single feature described or implicit in any embodiment or any single feature shown or implicit in any drawing may still be combined or subtracted between any of the features (or equivalents thereof) to obtain still further embodiments of the invention that may not be directly mentioned herein. In addition, for the sake of simplicity, the same or similar features may be indicated in only one place in the same drawing.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
It should be noted that, in the present application, the embodiments and features of the embodiments may be combined with each other without conflict.
Example 1
Referring to fig. 1 to 4, an InSb single crystal growth thermal field apparatus capable of reducing contamination includes a single crystal growth crucible body 1 and a heat-insulating module 2, the single crystal growth crucible body being located inside the heat-insulating module;
the single crystal growth crucible body comprises a graphite crucible 101, quartz crucible layers 102 are fixedly arranged on the inner side and the outer side of the graphite crucible, the graphite crucible is hermetically wrapped in the quartz crucible layers, and the space where the graphite crucible is located is a vacuum environment;
the heat preservation module comprises a quartz sealing cover body 201, and a heat preservation carbon felt 202 is arranged on the side wall of the quartz sealing cover body in a sealing mode; in this embodiment, the quartz sealing cover body is a cylindrical sealing structure with two open ends, and the heat-insulating carbon felt is sealed between the inner interlayer and the outer interlayer of the cylindrical side wall of the quartz sealing cover body;
the device is characterized by further comprising an inert gas conveying pipe 3, wherein the inert gas conveying pipe penetrates through the heat preservation module and then is bent, upwards coiled and wound, the inert gas conveying pipe is close to the outer side wall of the single crystal growth crucible body as much as possible when being arranged, so that the inert gas can be heated when passing through a high-temperature area where a crucible heating body is located, an outlet of the inert gas conveying pipe is located at an opening on the surface of the single crystal growth crucible body, the inert gas in the inert gas conveying pipe is blown to the liquid level and the crystal surface after being heated, and the temperature gradient in the single crystal growth crucible body is reduced; furthermore, it can be considered that the inert gas conveying pipe extends from a groove at the bottom of the quartz sealing cover body, then bends upwards, and forms an annular structure at the tail end in a surrounding manner, and the annular structure is provided with a plurality of gas outlet holes 301, so that the inert gas is blown around the liquid level and the crystal surface in a dispersing manner, and it needs to be noted that the direction of the gas outlet holes 301 faces to the inside of the single crystal growth crucible body, so that the high-purity inert gas (such as nitrogen) is heated after passing through a high-temperature zone and is blown to the liquid level and the crystal surface, the temperature of the crystal surface and the liquid level temperature can be improved, and the effect of reducing the temperature gradient is achieved; in this embodiment, the two inert gas delivery pipes 3 are respectively filled with inert gas, and the two inert gas delivery pipes form a ring-shaped connection structure on the single crystal growth crucible body, so that the inert gas can be better heated and utilized.
The graphite crucible is subjected to high vacuum sintering impurity removal treatment, during preparation, the graphite crucible is subjected to high vacuum sintering impurity removal treatment, the inner quartz crucible layer and the outer quartz crucible layer are cleaned, then the graphite crucible is filled between the inner quartz crucible layer and the outer quartz crucible layer to form a crucible device with a clamping layer, and the crucible device is installed on a vacuum tube sealing machine for vacuumizing; the outer quartz crucible layer and the inner quartz crucible layer are burnt to be fused together by oxyhydrogen flame, the graphite crucible is completely sealed in the quartz crucible interlayer, redundant part of the quartz crucible is cut off, the single crystal growth crucible body with the graphite interlayer is made, the crucible body can be used for InSb single crystal growth after being cleaned, and the InSb material can not damage the quartz crucible, can be used repeatedly after being cleaned by corrosion, and plays a role in reducing the cost;
the crucible also comprises a bottom support 4, wherein the bottom support is fixedly arranged at the bottom of the single crystal growth crucible body; still include supporting seat 5, the supporting seat with the collet can cooperate the installation, and the realization is right the support of the single crystal growth crucible body.
The single crystal growth crucible body and the heat preservation module are positioned in the single crystal furnace, and the single crystal growth crucible body and the heat preservation module are positioned on the bottom surface inside the single crystal furnace; the single crystal furnace is provided with a switch furnace door, the single crystal furnace is provided with an inert gas inlet and outlet structure, so that the inert gas can replace the air in the single crystal furnace, the inert gas inlet and outlet structure can be realized by installing a one-way valve and an air inlet and outlet pipeline on the single crystal furnace 6, the air pressure in the single crystal furnace 6 is kept stable while the air in the single crystal furnace 6 is replaced, and in addition, the inert gas conveying pipe 3 can hermetically penetrate through the single crystal furnace 6 to realize the input of the air.
In addition, the single crystal growth crucible further comprises a heating coil 7 which is installed on the inner wall of the single crystal furnace, is connected with an electrode and can heat the single crystal growth crucible body.
In addition, it can be considered that a seed rod 8 is installed at the top of the single crystal furnace, the seed rod penetrates through the single crystal furnace, the single crystal furnace has lifting and rotating functions, a seed crystal 9 can be installed at the tail end of the single crystal furnace, the seed rod can be an existing controllable product, and the specific structure and the installation mode are not repeated herein.
Example 2
The method for growing an InSb single crystal using the InSb single crystal growth thermal field apparatus capable of reducing contamination in example 1 includes the steps of:
weighing high-purity In and Sb elements In proportion and putting the high-purity In and Sb elements into a single crystal growth crucible body;
covering a single crystal growth crucible body with a quartz sealing cover body, penetrating an inert gas conveying pipe into the quartz sealing cover body, connecting the inert gas conveying pipe with an air inlet end, installing seed crystals at the lower end of a seed crystal rod, and adjusting the position;
placing a single crystal growth crucible body and a heat preservation module into a single crystal furnace, closing a switch furnace door, and replacing air in the single crystal furnace by inert gas;
starting a heating coil to heat a crucible body for single crystal growth, melting the raw material, conveying inert gas to the upper part of a quartz crucible through an inert gas conveying pipe, specifically, heating the temperature to 530 ℃, keeping the temperature for 2 hours, waiting for the raw material to be fully melted, opening the inert gas (such as nitrogen), and adjusting the flow rate of a flow agent to be 2.5L/min;
and controlling a seed rod to extend seed crystals into the liquid level of the molten raw material, and adjusting the temperature to the single crystal growth temperature to perform single crystal growth.
After the thermal field device is used, the scum on the surface of the melt is obviously reduced, the temperature gradient of the liquid level and the crystal surface is also effectively reduced, and a foundation is laid for growing high-quality InSb single crystals; and pollution sources such as C, O and the like are reduced, the liquid level is clean and has no scum, single crystals can grow better, and twin crystals or polycrystal are reduced.
The present invention has been described in detail with reference to the above examples, but the description is only for the preferred examples of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. An InSb single crystal growth thermal field device capable of reducing pollution is characterized in that: the single crystal growth crucible comprises a single crystal growth crucible body and a heat preservation module, wherein the single crystal growth crucible body is positioned inside the heat preservation module;
the single crystal growth crucible body comprises a graphite crucible, quartz crucible layers are fixedly arranged on the inner side and the outer side of the graphite crucible, the graphite crucible is hermetically wrapped in the quartz crucible layers, and the space where the graphite crucible is located is a vacuum environment;
the heat preservation module comprises a quartz sealing cover body, and a heat preservation carbon felt is arranged in the quartz sealing cover body in a sealing manner;
still include the inert gas conveyer pipe, the inert gas conveyer pipe passes the heat preservation module is located the inside inert gas conveyer pipe of heat preservation module spirals the winding, and its export is located the surface opening part of the single crystal growth crucible body for the inert gas in the inert gas conveyer pipe blows off after the heating at liquid level and crystal surface, reduces the internal temperature gradient of single crystal growth crucible.
2. The InSb single crystal growth thermal field apparatus capable of reducing contamination according to claim 1, wherein: the graphite crucible is subjected to high vacuum sintering impurity removal treatment.
3. The InSb single crystal growth thermal field apparatus capable of reducing contamination according to claim 1, wherein: the inert gas conveying pipe extends from a groove at the bottom of the quartz sealing cover body, then bends upwards, and surrounds the tail end to form an annular structure, and a plurality of gas outlets are formed in the annular structure, so that the inert gas is blown to the liquid level and the crystal surface in a surrounding and dispersing mode.
4. The InSb single crystal growth thermal field apparatus capable of reducing contamination according to claim 1, wherein: the crucible also comprises a bottom support which is fixedly arranged at the bottom of the single crystal growth crucible body.
5. The InSb single crystal growth thermal field apparatus capable of reducing contamination according to claim 4, wherein: the support seat can be installed in a matched mode with the bottom support, and the support of the single crystal growth crucible body is achieved.
6. The InSb single crystal growth thermal field apparatus capable of reducing contamination according to claim 1, wherein: the single crystal growth crucible body and the heat preservation module are positioned in the single crystal furnace, a switch furnace door is arranged on the single crystal furnace, and an inert gas inlet and outlet structure is arranged on the single crystal furnace, so that the inert gas can replace the air in the single crystal furnace.
7. The InSb single crystal growth thermal field apparatus capable of reducing contamination according to claim 6, wherein: the heating coil is arranged on the inner wall of the single crystal furnace, is connected with the electrode and can heat the single crystal growth crucible body.
8. The InSb single crystal growth thermal field apparatus capable of reducing contamination according to claim 1, wherein: the quartz sealing cover body is a cylindrical sealing structure with two open ends, and the heat-preservation carbon felt is sealed between the inner interlayer and the outer interlayer of the cylindrical side wall of the quartz sealing cover body.
9. The InSb single crystal growth thermal field apparatus capable of reducing contamination according to claim 6, wherein: the top of the single crystal furnace is provided with a seed rod which passes through the single crystal furnace, and the tail end of the seed rod can be provided with seed crystals.
10. A method of InSb single crystal growth using a contamination-reduced InSb single crystal growth thermal field apparatus as claimed in any one of claims 1 to 9, comprising the steps of:
putting an InSb polycrystalline raw material into a single crystal growth crucible body;
penetrating an inert gas conveying pipe into the quartz sealing cover body, enabling the inert gas conveying pipe to walk close to the outer side wall of the single crystal growth crucible body, mounting seed crystals at the lower end of a seed crystal rod, adjusting the position, and covering the single crystal growth crucible body with the quartz sealing cover body;
placing a single crystal growth crucible body and a heat preservation module into a single crystal furnace, closing a switch furnace door, and replacing air in the single crystal furnace by inert gas;
starting a heating coil to heat a single crystal growth crucible body, melting the raw materials, and conveying inert gas to the upper part of the quartz crucible through an inert gas conveying pipe;
and controlling a seed rod to extend seed crystals into the liquid level of the molten raw material, and adjusting the temperature to the single crystal growth temperature to perform single crystal growth.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210361675.3A CN114686985A (en) | 2022-04-07 | 2022-04-07 | InSb single crystal growth thermal field device capable of reducing pollution and growth method |
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| CN202210361675.3A CN114686985A (en) | 2022-04-07 | 2022-04-07 | InSb single crystal growth thermal field device capable of reducing pollution and growth method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115237176A (en) * | 2022-07-19 | 2022-10-25 | 广东粤港澳大湾区硬科技创新研究院 | Ultraviolet nonlinear crystal temperature control device and temperature control method thereof |
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| CN204251756U (en) * | 2014-11-27 | 2015-04-08 | 乐山新天源太阳能科技有限公司 | A kind of single crystal growing furnace |
| CN205205271U (en) * | 2015-12-09 | 2016-05-04 | 英利能源（中国）有限公司 | Mono -crystal furnace thermal field |
| CN206438201U (en) * | 2016-11-28 | 2017-08-25 | 浙江钱江明士达光电科技有限公司 | The argon gas preheating device of polycrystalline silicon ingot or purifying furnace |
| CN109137067A (en) * | 2018-10-30 | 2019-01-04 | 浙江羿阳太阳能科技有限公司 | A kind of polycrystal silicon ingot pouring device and casting method |
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| CN204251756U (en) * | 2014-11-27 | 2015-04-08 | 乐山新天源太阳能科技有限公司 | A kind of single crystal growing furnace |
| CN205205271U (en) * | 2015-12-09 | 2016-05-04 | 英利能源（中国）有限公司 | Mono -crystal furnace thermal field |
| CN206438201U (en) * | 2016-11-28 | 2017-08-25 | 浙江钱江明士达光电科技有限公司 | The argon gas preheating device of polycrystalline silicon ingot or purifying furnace |
| CN109137067A (en) * | 2018-10-30 | 2019-01-04 | 浙江羿阳太阳能科技有限公司 | A kind of polycrystal silicon ingot pouring device and casting method |
| CN110923803A (en) * | 2019-12-25 | 2020-03-27 | 南京晶升能源设备有限公司 | Semiconductor silicon material consumable material growth furnace and silicon material preparation method |
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| CN115237176A (en) * | 2022-07-19 | 2022-10-25 | 广东粤港澳大湾区硬科技创新研究院 | Ultraviolet nonlinear crystal temperature control device and temperature control method thereof |
| CN115237176B (en) * | 2022-07-19 | 2024-03-19 | 广东卓劼激光科技有限公司 | Ultraviolet nonlinear crystal temperature control device and temperature control method thereof |
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