CN114686115A - Chemical mechanical polishing solution and use method thereof - Google Patents
Chemical mechanical polishing solution and use method thereof Download PDFInfo
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- CN114686115A CN114686115A CN202011626118.7A CN202011626118A CN114686115A CN 114686115 A CN114686115 A CN 114686115A CN 202011626118 A CN202011626118 A CN 202011626118A CN 114686115 A CN114686115 A CN 114686115A
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- mechanical polishing
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- 238000005498 polishing Methods 0.000 title claims abstract description 128
- 239000000126 substance Substances 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 9
- -1 carboxylic acid compound Chemical class 0.000 claims abstract description 23
- 239000007800 oxidant agent Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000003575 carbonaceous material Substances 0.000 claims abstract description 3
- 239000007788 liquid Substances 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 4
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229960003330 pentetic acid Drugs 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000012286 potassium permanganate Substances 0.000 claims description 3
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 claims description 2
- VKZRWSNIWNFCIQ-WDSKDSINSA-N (2s)-2-[2-[[(1s)-1,2-dicarboxyethyl]amino]ethylamino]butanedioic acid Chemical compound OC(=O)C[C@@H](C(O)=O)NCCN[C@H](C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-WDSKDSINSA-N 0.000 claims description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 claims description 2
- TZMVSJNOQJXJMO-UHFFFAOYSA-N 2-[1,2,2-tris(carboxymethyl)cyclohexyl]acetic acid Chemical compound OC(=O)CC1(CC(O)=O)CCCCC1(CC(O)=O)CC(O)=O TZMVSJNOQJXJMO-UHFFFAOYSA-N 0.000 claims description 2
- RAEOEMDZDMCHJA-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-[2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]ethyl]amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CCN(CC(O)=O)CC(O)=O)CC(O)=O RAEOEMDZDMCHJA-UHFFFAOYSA-N 0.000 claims description 2
- 239000004475 Arginine Substances 0.000 claims description 2
- DCXYFEDJOCDNAF-UHFFFAOYSA-N Asparagine Natural products OC(=O)C(N)CC(N)=O DCXYFEDJOCDNAF-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 2
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004471 Glycine Substances 0.000 claims description 2
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 claims description 2
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims description 2
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 claims description 2
- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical compound OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 claims description 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 2
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 2
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 claims description 2
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 claims description 2
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 claims description 2
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 claims description 2
- COLNVLDHVKWLRT-QMMMGPOBSA-N L-phenylalanine Chemical compound OC(=O)[C@@H](N)CC1=CC=CC=C1 COLNVLDHVKWLRT-QMMMGPOBSA-N 0.000 claims description 2
- QIVBCDIJIAJPQS-VIFPVBQESA-N L-tryptophane Chemical compound C1=CC=C2C(C[C@H](N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-VIFPVBQESA-N 0.000 claims description 2
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 claims description 2
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 claims description 2
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 claims description 2
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004472 Lysine Substances 0.000 claims description 2
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 claims description 2
- 229920002845 Poly(methacrylic acid) Polymers 0.000 claims description 2
- 229920000805 Polyaspartic acid Polymers 0.000 claims description 2
- 108010020346 Polyglutamic Acid Proteins 0.000 claims description 2
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims description 2
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 claims description 2
- 229920002125 Sokalan® Polymers 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- QIVBCDIJIAJPQS-UHFFFAOYSA-N Tryptophan Natural products C1=CC=C2C(CC(N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-UHFFFAOYSA-N 0.000 claims description 2
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 claims description 2
- VYTBPJNGNGMRFH-UHFFFAOYSA-N acetic acid;azane Chemical compound N.N.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O VYTBPJNGNGMRFH-UHFFFAOYSA-N 0.000 claims description 2
- 235000004279 alanine Nutrition 0.000 claims description 2
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 claims description 2
- 235000009582 asparagine Nutrition 0.000 claims description 2
- 229960001230 asparagine Drugs 0.000 claims description 2
- 235000003704 aspartic acid Nutrition 0.000 claims description 2
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 229960001484 edetic acid Drugs 0.000 claims description 2
- 235000013922 glutamic acid Nutrition 0.000 claims description 2
- 239000004220 glutamic acid Substances 0.000 claims description 2
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 claims description 2
- 235000004554 glutamine Nutrition 0.000 claims description 2
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 claims description 2
- 235000005772 leucine Nutrition 0.000 claims description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 2
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 claims description 2
- 235000008729 phenylalanine Nutrition 0.000 claims description 2
- 229920000141 poly(maleic anhydride) Polymers 0.000 claims description 2
- 239000004584 polyacrylic acid Substances 0.000 claims description 2
- 108010064470 polyaspartate Proteins 0.000 claims description 2
- 229920002643 polyglutamic acid Polymers 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 claims description 2
- 239000004474 valine Substances 0.000 claims description 2
- 229960004488 linolenic acid Drugs 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 13
- 239000006227 byproduct Substances 0.000 abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052799 carbon Inorganic materials 0.000 abstract description 8
- 238000004140 cleaning Methods 0.000 abstract description 6
- 230000000052 comparative effect Effects 0.000 description 18
- 229910003481 amorphous carbon Inorganic materials 0.000 description 12
- 230000000694 effects Effects 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- CVMIVKAWUQZOBP-UHFFFAOYSA-L manganic acid Chemical compound O[Mn](O)(=O)=O CVMIVKAWUQZOBP-UHFFFAOYSA-L 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229960001124 trientine Drugs 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Abstract
The invention aims to provide a polishing solution for carbon-containing materials and a using method thereof. The chemical mechanical polishing solution comprises an abrasive, an oxidizing agent, a carboxylic acid compound and water, and effectively reduces the polishing by-product residue on the surface of the polishing pad while maintaining a high removal rate of the carbonaceous material, remarkably improves the surface cleaning degree of the polishing pad, prolongs the service life of the polishing pad, and reduces the defects on the surface of a polished wafer.
Description
Technical Field
The invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing solution and a using method thereof.
Background
With the continuous development of semiconductor technology and the increasing number of interconnect layers in large-scale integrated circuits, the planarization technology of the conductive layer and the insulating dielectric layer becomes more critical. In the 80's of the twentieth century, Chemical Mechanical Polishing (CMP) technology pioneered by IBM corporation was considered the most effective method of global planarization at present. Chemical Mechanical Polishing (CMP) consists of chemical action, mechanical action, and a combination of these two actions. It generally consists of a polishing table with a polishing pad and a polishing head for carrying the chip. Wherein the polishing head holds the chip and then presses the front side of the chip against the polishing pad. When performing chemical mechanical polishing, the polishing head moves linearly over the polishing pad or rotates in the same direction of motion as the polishing table. At the same time, the slurry containing the abrasive is dropped onto the polishing pad and is spread on the polishing pad by centrifugation. The chip surface is globally planarized under the dual actions of mechanical and chemical.
The carbon-containing materials such as silicon carbide, amorphous carbon and the like are used as a new generation of wide band gap semiconductor material, have the characteristics of wide band gap, high thermal conductivity, high critical breakdown electric field, high electron saturation migration rate, high chemical stability and the like, and have great application potential in the aspects of high-temperature, high-frequency, high-power and high-density integrated electronic devices and the like. However, the carbon-containing material is very stable at normal temperature, is not easy to generate chemical reaction, and has good tolerance to mechanical grinding, so that the commonly used chemical mechanical polishing solution is difficult to obtain higher polishing speed when the carbon-containing material is polished.
It is generally necessary to remove the carbonaceous material after oxidation with an oxidizing agent. The common oxidant is hydrogen peroxide, but the oxidation capacity of the hydrogen peroxide is weak, so that an ideal removal rate cannot be obtained. CN102464944A strong oxidizing agents such as permanganic acid, manganic acid and salts thereof are added into the polishing solution to improve the chemical mechanical polishing rate of the carbon-containing material. In the process of polishing carbon-containing materials by using permanganate, manganic acid and salts thereof as oxidants, the permanganate, manganic acid and other oxidants are reduced to inevitably generate byproducts with dark colors and are easy to deposit on the surface and holes of the polishing pad, so that the polishing byproducts are accumulated on the polishing pad, the service life of the polishing pad is influenced, and the defects on the polished surface are increased.
Disclosure of Invention
In order to solve the problems, the invention provides a polishing solution and a use method thereof, wherein a carboxylic acid compound is added into the polishing solution, and under the condition of less influence on removal rate, a by-product in the polishing process can directly react with the carboxylic acid compound to form a soluble manganese complex, so that the by-product in the polishing process is prevented from depositing on a polishing pad, the service life of the polishing pad is prolonged, and the defects of the polished wafer surface are reduced.
Specifically, the chemical mechanical polishing solution of the present invention comprises an abrasive, an oxidizing agent, a carboxylic acid compound and water, wherein the carboxylic acid compound is an acid or a salt thereof.
The carboxylic acid compound is selected from phenylalanine, glutamic acid, asparagine, glutamine, leucine, cyclohexane tetraacetic acid, ethylenediamine disuccinic acid, glycolic acid, citric acid, tyrosine, tryptophan, lysine, arginine, histidine, serine, glycine, alanine, valine, proline, dihydroxyethyl glycine, tartaric acid, aspartic acid, hydrolyzed polymaleic anhydride, aminotriacetic acid, 1, 2-cyclohexanediamine tetraacetic acid, ethylene glycol diethyl ether diamine tetraacetic acid, ethylene diamine tetraacetic acid, diethylene triamine pentaacetic acid, hydroxyethyl diamine triacetic acid, 1, 2-cyclohexanediamine-N, n, N' of the first group, one or more of N' -tetraacetic acid, triethylene tetramine hexaacetic acid, diethylene triamine pentaacetic acid, fumaric acid-propylene sulfonic acid copolymer, polymethacrylic acid, polyaspartic acid, polyglutamic acid or polyacrylic acid.
The oxidant is potassium permanganate.
The abrasive is selected from one or more of manganese dioxide, aluminum oxide, cerium dioxide, titanium dioxide single-component abrasive and composite abrasive coated with manganese dioxide, aluminum oxide, cerium dioxide and titanium dioxide on the surface.
In the invention, the content of the abrasive material is 0.1-10% by mass.
In the present invention, the abrasive has a particle size ranging from 50 to 500 nm.
In the invention, the mass percentage content of the oxidant is 0.01-1%.
In the present invention, the content of the carboxylic acid compound is 0.01% to 2% by mass, preferably 0.1% to 0.5% by mass.
In the invention, the pH value of the chemical mechanical polishing solution is 2-6.
The polishing solution of the present invention can be prepared by concentrating the components except the oxidizing agent, diluting with deionized water and adding the oxidizing agent to the concentration range of the present invention before use.
In another aspect, the present invention provides a method for using the chemical mechanical polishing solution of the present invention, comprising: the chemical mechanical polishing solution is used for chemical mechanical polishing of carbon-containing materials.
Compared with the prior art, the invention has the advantages that: the carboxylic acid compound is added into the chemical mechanical polishing solution, so that the residue of polishing by-products on the surface of the polishing pad is reduced, and the defects on the surface of the polished wafer are reduced.
Detailed Description
The advantages of the invention are explained in detail below with reference to specific embodiments.
According to the formula given in Table 1, the polishing solutions of comparative examples 1-4 and examples 1-49 of the present application were prepared, then a certain concentration of oxidizer solution, carboxylic acid compound and abrasive were mixed uniformly, water was used to make up the mass percent to 100%, KOH or HNO was used3And adjusting the pH value of the polishing solution to the required value.
TABLE 1 polishing solutions for comparative examples 1-4 and examples 1-49, compositions, contents, and pH thereof
Effect example 1
The polishing of the blank amorphous carbon was carried out under the following conditions using the polishing liquids of comparative examples 1 to 4 and examples 41 to 49. The specific polishing conditions are as follows: the polishing machine is Reflexion LK, a polishing pad IC1010 polishing pad and a 300mm wafer, the grinding pressure is 2.5psi, the rotating speed of a grinding disc is 93 revolutions per minute, the rotating speed of a grinding head is 87 revolutions per minute, the flow rate of polishing liquid is 300ml/min, and the polishing time is 1 min. The data of the polishing effects measured for comparative examples 1 to 4 and examples 41 to 49 are shown in Table 2.
TABLE 2 polishing Effect data for comparative examples 1 to 4 and examples 41 to 49
Wherein the degree of cleaning of the surface of the polishing pad is described in the following manner:
the surface of the +++ polishing pad is heavily contaminated; apparent contamination of the surface of the + + polishing pad; the surface of the + polishing pad has a small amount of pollution; + no obvious pollution on the surface of the polishing pad.
As can be seen from Table 2, the polishing solutions of comparative examples 1-3 used a single-component abrasive, and the polishing solution of comparative example 4 used a composite abrasive and potassium permanganate as the oxidizing agent, wherein comparative examples 2 and 4 had a certain amorphous carbon removal rate, but the surface of the polishing pad after polishing was less clean. Compared with the comparative example, the polishing solution of the embodiment of the invention has higher amorphous carbon removal rate, and the surface of the polishing pad after polishing has higher cleaning degree.
The polishing solutions of examples 41 and 42 adopt a single-component abrasive, and compared with the polishing solutions of comparative examples 2 and 3, the removal rate of amorphous carbon is kept substantially unchanged by adding the carboxylic acid compound, and meanwhile, the polishing by-product residue on the surface of the polishing pad can be effectively reduced, and the cleaning degree of the surface of the polishing pad is remarkably improved.
Compared with the polishing solution of comparative example 4, the polishing solution of example 44 also employs a two-component composite abrasive, and by adding a carboxylic acid compound, the removal rate of amorphous carbon is slightly increased, and the polishing by-product residue on the surface of the polishing pad can be effectively reduced, so that the degree of cleaning the surface of the polishing pad is significantly improved.
Therefore, in the polishing solutions of examples 41 to 49 of the present invention, by selecting the abrasives, the oxidizing agent and the carboxylic acid compound with suitable particle sizes and adjusting the suitable pH, the polishing by-product residue on the surface of the polishing pad can be effectively reduced while ensuring a high amorphous carbon removal rate, and the cleaning degree of the surface of the polishing pad is significantly improved.
Effect example 2
Using the polishing liquids of comparative examples 1 to 4 and inventive examples 46 to 49, bare pieces of amorphous carbon were polished and examined for the number of surface defects under the following conditions. The specific polishing conditions are as follows:
polishing conditions: the polishing machine is Reflexion LK, a polishing pad IC1010 polishing pad, a 300mm wafer, the grinding pressure is 2.5psi, the rotating speed of a grinding disc is 93 revolutions per minute, the rotating speed of a grinding head is 87 revolutions per minute, the flow rate of polishing liquid is 300ml/min, and the polishing time is 1 min. The number of surface defects of the polished blank wafer was measured by the surface defect scanner SP2, and the results of the number of surface defects obtained are shown in Table 3.
TABLE 3 amorphous carbon surface defect counts after polishing for comparative examples 1-4 and examples 46-49
As can be seen from Table 3, the polishing solutions of comparative examples 1-4, which did not use carboxylic acid compound, had defect numbers of 350-450 on the surface of the amorphous carbon wafer after polishing, while the polishing solutions of examples 46-49, which used carboxylic acid compound in the present invention, had significantly improved surface defects of the amorphous carbon after polishing, and had significantly reduced surface defects numbers of the amorphous carbon in the range of 40-70.
Effect example 3
Using the polishing liquids of comparative examples 1 to 4 and examples 46 to 49, bare silicon carbide was polished under the following conditions. The specific polishing conditions are as follows: the polishing machine is Reflexion LK, a polishing pad IC1010 polishing pad, a 300mm wafer, the grinding pressure is 2.5psi, the rotating speed of a grinding disc is 93 revolutions per minute, the rotating speed of a grinding head is 87 revolutions per minute, the flow rate of polishing liquid is 300ml/min, and the polishing time is 1 min. The data of the polishing effects measured for comparative examples 1 to 4 and examples 46 to 49 are shown in Table 4.
TABLE 4 silicon carbide polishing Effect data for comparative examples 1-4 and examples 46-49
As shown in Table 4, compared with comparative examples 1 to 4, the polishing solutions of examples 46 to 49 according to the present invention, which use carboxylic acid compounds, have higher removal rates of SiC, and also reduce the polishing by-product residue on the surface of the polishing pad, thereby improving the surface cleanliness of the polishing pad.
In conclusion, the carboxylic acid compound is added, so that the polishing solution has a higher removal rate on the carbon-containing material under the acidic condition, the polishing by-product residue on the surface of the polishing pad after polishing is reduced, and the defects on the surface of the polished wafer are reduced.
The embodiments of the present invention have been described in detail, but the embodiments are merely examples, and the present invention is not limited to the embodiments described above. Any equivalent modifications and substitutions to those skilled in the art are also within the scope of the present invention. Accordingly, equivalent changes and modifications made without departing from the spirit and scope of the present invention should be covered by the present invention.
Claims (11)
1. A chemical mechanical polishing liquid is characterized in that,
comprising an abrasive, an oxidizing agent, a carboxylic acid compound and water, wherein the carboxylic acid compound is an acid or a salt thereof.
2. The chemical mechanical polishing solution according to claim 1,
the carboxylic acid compound is selected from phenylalanine, glutamic acid, asparagine, glutamine, leucine, cyclohexane tetraacetic acid, ethylenediamine disuccinic acid, glycolic acid, citric acid, tyrosine, tryptophan, lysine, arginine, histidine, serine, glycine, alanine, valine, proline, dihydroxyethyl glycine, tartaric acid, aspartic acid, hydrolyzed polymaleic anhydride, aminotriacetic acid, 1, 2-cyclohexanediamine tetraacetic acid, ethylene glycol diethyl ether diamine tetraacetic acid, ethylene diamine tetraacetic acid, diethylene triamine pentaacetic acid, hydroxyethyl diamine triacetic acid, 1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid, triethylene diamine hexaacetic acid, diethylene triamine pentaacetic acid, fumaric acid-propylene sulfonic acid copolymer, polymethacrylic acid, polyaspartic acid, polyglutamic acid, L-alpha-linolenic acid, L-alpha-linolenic acid, L-alpha-linolenic acid, alpha-alpha, One or more of polyacrylic acid.
3. The chemical mechanical polishing solution according to claim 1,
the oxidant is potassium permanganate.
4. The chemical mechanical polishing liquid according to claim 1,
the abrasive is selected from one or more of manganese dioxide, aluminum oxide, cerium dioxide, titanium dioxide single-component abrasive and composite abrasive coated with silicon dioxide, aluminum oxide, cerium dioxide and titanium dioxide on the surface.
5. The chemical mechanical polishing solution according to claim 1,
the content of the grinding material is 0.1-10% by mass.
6. The chemical mechanical polishing solution according to claim 1,
the grain size range of the abrasive is 50-500 nm.
7. The chemical mechanical polishing solution according to claim 1,
the mass percentage content of the oxidant is 0.01-1%.
8. The chemical mechanical polishing solution according to claim 1,
the mass percentage content of the carboxylic acid compound is 0.01-2%.
9. The chemical mechanical polishing solution according to claim 8,
the mass percentage content of the carboxylic acid compound is 0.1-0.5%.
10. The chemical mechanical polishing solution according to claim 1,
the pH value of the chemical mechanical polishing solution is 2-6.
11. A method for using chemical mechanical polishing solution is characterized in that,
use of the chemical mechanical polishing liquid according to any one of claims 1 to 10 for chemical mechanical polishing of a carbonaceous material.
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| CN202011626118.7A CN114686115A (en) | 2020-12-30 | 2020-12-30 | Chemical mechanical polishing solution and use method thereof |
| TW110148259A TW202235555A (en) | 2020-12-30 | 2021-12-22 | Chemical mechanical polishing slurry and method of using the same |
| PCT/CN2021/142293 WO2022143719A1 (en) | 2020-12-30 | 2021-12-29 | Chemical-mechanical polishing solution and use method therefor |
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| CN115662877A (en) * | 2022-09-08 | 2023-01-31 | 东海县太阳光新能源有限公司 | Monocrystalline silicon surface cleaning method |
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Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| TWI288046B (en) * | 2003-11-14 | 2007-10-11 | Showa Denko Kk | Polishing composition and polishing method |
| JP2009094430A (en) * | 2007-10-12 | 2009-04-30 | Adeka Corp | Polishing composition for cmp |
| CN101747844B (en) * | 2008-12-19 | 2014-04-16 | 安集微电子（上海）有限公司 | Chemically mechanical polishing solution and application thereof |
| CN101747843A (en) * | 2008-12-19 | 2010-06-23 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
| CN102093818A (en) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | Chemical mechanical polishing slurry and application thereof |
| CN102464944B (en) * | 2010-11-05 | 2015-05-20 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing liquid and its application method |
| CN102533124A (en) * | 2010-12-31 | 2012-07-04 | 上海硅酸盐研究所中试基地 | Polishing solution for silicon carbide substrate |
| KR20140062107A (en) * | 2011-09-05 | 2014-05-22 | 아사히 가라스 가부시키가이샤 | Polishing agent and polishing method |
| CN102888193A (en) * | 2012-06-25 | 2013-01-23 | 上海应用技术学院 | Chemical mechanical polishing solution for processing surface of sapphire or carborundum wafer for LED (Light Emitting Diode) substrate slice and preparation method thereof |
| CN103866326A (en) * | 2012-12-10 | 2014-06-18 | 安集微电子（上海）有限公司 | Chemo-mechanical polishing slurry for metal, and its application |
| CN103897602B (en) * | 2012-12-24 | 2017-10-13 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid and polishing method |
| CN104312440B (en) * | 2014-10-28 | 2016-04-27 | 清华大学 | A kind of chemical-mechanical polishing compositions |
| CN106189872A (en) * | 2016-07-13 | 2016-12-07 | 清华大学 | A kind of polishing composition and preparation, finishing method |
| US10428241B2 (en) * | 2017-10-05 | 2019-10-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions containing charged abrasive |
| CN109370439A (en) * | 2018-10-22 | 2019-02-22 | 河北工业大学 | For inhibiting the polishing slurries of copper cobalt barrier layer galvanic corrosion and cobalt surface pitting |
| CN109554119B (en) * | 2018-11-02 | 2020-11-20 | 山东天岳先进材料科技有限公司 | Silicon carbide chemical mechanical polishing solution with improved pH stability and application thereof |
| CN109321141B (en) * | 2018-11-02 | 2019-12-03 | 山东天岳先进材料科技有限公司 | A method of preparing the stability-enhanced silicon carbide chemical mechanical polishing liquid of pH |
| CN111234705A (en) * | 2020-01-16 | 2020-06-05 | 昂士特科技(深圳)有限公司 | Polishing solution for chemical mechanical polishing of silicon carbide |
| CN112029417A (en) * | 2020-09-30 | 2020-12-04 | 常州时创新材料有限公司 | Polishing composition for silicon carbide CMP and preparation method thereof |
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| CN115662877A (en) * | 2022-09-08 | 2023-01-31 | 东海县太阳光新能源有限公司 | Monocrystalline silicon surface cleaning method |
| CN115662877B (en) * | 2022-09-08 | 2023-08-04 | 东海县太阳光新能源有限公司 | Monocrystalline silicon surface cleaning method |
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