CN114678249A - Etching device - Google Patents
Etching device Download PDFInfo
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- CN114678249A CN114678249A CN202011555729.7A CN202011555729A CN114678249A CN 114678249 A CN114678249 A CN 114678249A CN 202011555729 A CN202011555729 A CN 202011555729A CN 114678249 A CN114678249 A CN 114678249A
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- 238000005530 etching Methods 0.000 title claims abstract description 222
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000001020 plasma etching Methods 0.000 claims abstract description 60
- 230000001105 regulatory effect Effects 0.000 claims abstract description 32
- 230000001276 controlling effect Effects 0.000 claims abstract description 28
- 238000007664 blowing Methods 0.000 claims description 44
- 239000001257 hydrogen Substances 0.000 claims description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 7
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 description 18
- 238000002955 isolation Methods 0.000 description 12
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000010926 purge Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides an etching device which comprises an etching cavity and a carrying platform arranged in the etching cavity. And a plasma etching component for etching the oxide mask and a pressure regulating component for regulating the pressure in the etching cavity are also arranged in the etching cavity. The control unit is used for controlling the pressure regulating assembly to regulate the pressure in the etching cavity to change in a pulse mode. The control unit is also used for controlling the plasma etching component to etch the oxide mask when the pressure intensity in the etching cavity is a first set pressure intensity; and when the pressure in the etching cavity is the second set pressure, controlling the plasma etching component to stop etching the oxide mask on the substrate. The first set pressure is greater than the second set pressure. The plasma etching component is in a discontinuous pulse type etching state of high-pressure etching, low-pressure stop etching, high-pressure etching and the like, the oxide mask is removed, and meanwhile, the silicon groove structure with a large height-width ratio below the oxide mask is prevented from inclining or collapsing.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an etching device.
Background
In a semiconductor manufacturing process, the oxide mask on the substrate needs to be removed many times, for example, after etching a Shallow Trench Isolation (STI), the oxide mask on the STI needs to be removed. In this process, at present, a wet etching method is used to remove the oxide mask on the shallow trench isolation, and then a Spin Drying (DIW Spin Drying or IPA Spin Drying) method is used to dry the substrate. The aspect ratio of shallow slot isolation is great, and in the wet etching process, because the etching solution need soak the longer time of substrate, rotatory dry process simultaneously, can make the silicon slot isolation structure between the shallow slot isolation on the substrate have great centrifugal force, simultaneously because etching solution and deionized water (DIW) have great surface tension, cause the silicon slot isolation structure slope between the shallow slot isolation that just has etched easily and collapse even to destroy the shallow slot isolation.
Disclosure of Invention
The invention provides an etching device which is used for etching an oxide mask on a substrate and simultaneously preventing a structure which is arranged in the substrate and is positioned below the oxide mask and has a larger height-to-width ratio from inclining or collapsing.
The invention provides an etching device, which is used for etching an oxide mask on a substrate and comprises an etching cavity and a carrying platform, wherein the carrying platform is arranged in the etching cavity and is used for holding the substrate on the carrying platform. And a plasma etching component for etching the oxide mask and a pressure regulating component for regulating the pressure in the etching cavity are also arranged in the etching cavity. The etching device further comprises a control unit which is in communication connection with the plasma etching assembly and the pressure regulating assembly, and the control unit is used for controlling the pressure regulating assembly to regulate the pressure in the etching cavity to be changed in a pulse mode. The control unit is also used for controlling the plasma etching component to etch the oxide mask when the pressure intensity in the etching cavity is a first set pressure intensity; and when the pressure in the etching cavity is the second set pressure, controlling the plasma etching component to stop etching the oxide mask on the substrate. Wherein the first set pressure is greater than the second set pressure.
In the scheme, the plasma etching assembly and the pressure regulating assembly are arranged in the etching cavity, and the control unit controls the pressure in the etching cavity to change in a pulse mode; and when the pressure intensity in the etching cavity is a first set pressure intensity, the plasma etching component etches the oxide mask, and when the pressure intensity in the etching cavity is a second set pressure intensity, the plasma etching component stops etching. The plasma etching component is in a discontinuous pulse type etching state of high-pressure etching, low-pressure stop etching, high-pressure etching and the like, the oxide mask is removed, and meanwhile, the structure with a larger height-width ratio below the oxide mask is prevented from inclining or collapsing. Compared with the wet etching mode in the prior art, the scheme of the application adopts dry etching and is in a discontinuous pulse type etching state of high-pressure etching, low-pressure stop etching, high-pressure etching and the like, so that the silicon groove structure with a larger height-width ratio below the oxide mask can be prevented from inclining or collapsing.
In a specific embodiment, the etching device further comprises a gas blowing assembly arranged in the etching chamber and used for blowing gas to the substrate to blow away the etched reaction products, and the gas blowing assembly is in communication connection with the control unit. The control unit is also used for controlling the air blowing assembly to blow air to the substrate when the pressure intensity in the etching cavity is a second set pressure intensity; and controlling the air blowing assembly to stop blowing air to the substrate when the pressure in the etching chamber is a first set pressure. By arranging the air blowing component, and adopting discontinuous pulse type etching blowing states such as high-pressure etching, low-pressure blowing, high-pressure etching, low-pressure blowing and the like between the plasma etching component and the air blowing component, the etching effect is improved, and meanwhile, the etched substances are prevented from polluting a microcircuit structure on the substrate.
In one embodiment, the first set pressure is less than 2Torr and the second set pressure is less than 500mTorr to improve the etching effect.
In a specific embodiment, the control unit controls the pressure regulating assembly to regulate the pressure in the etching chamber to change between the first set pressure and the second set pressure in a square wave manner, so that the conversion time between the first set pressure and the second set pressure is short, and the etching effect is improved.
In a specific embodiment, the etching apparatus further comprises a temperature adjusting assembly disposed in the etching chamber and used for adjusting the temperature in the etching chamber, and the temperature adjusting assembly is in communication connection with the control unit. The control unit is also used for controlling the temperature regulating component to regulate the temperature in the etching chamber to change in a pulse mode. The control unit is also used for controlling the plasma etching component to etch the oxide mask when the temperature in the etching cavity is a first set temperature; and when the temperature in the etching cavity is the second set temperature, controlling the plasma etching assembly to stop etching the oxide mask. Wherein the first set temperature is less than the second set temperature. By arranging the temperature regulating assembly, the plasma etching assembly adopts discontinuous pulse type etching states such as etching at high pressure and low temperature, stopping etching at low pressure and high temperature, etching at high pressure and low temperature and the like, so that the etching effect is improved.
In one embodiment, the first set temperature is 80 ℃ or higher to improve the etching and purging effects.
In a specific embodiment, the temperature conditioning assembly includes a Xe flash lamp disposed within the etch chamber and configured to heat a medium within the etch chamber to enhance the temperature conversion effect within the etch chamber.
In a specific embodiment, the control unit is further used for controlling the air blowing assembly to blow air to the substrate when the temperature in the etching chamber is a second set temperature; and controlling the air blowing assembly to stop blowing air to the substrate when the temperature in the etching chamber is a first set temperature. The etching effect is improved by adopting discontinuous pulse type etching modes such as high-pressure low-temperature etching, low-pressure high-temperature purging, high-pressure low-temperature etching, low-pressure high-temperature purging and the like.
In a specific embodiment, the control unit controls the temperature adjustment assembly to adjust the temperature in the etching chamber to be changed between a first set temperature and a second set temperature in a square wave manner, so that the conversion time between the first set temperature and the second set temperature is shorter, and the etching and purging effects are improved.
In a specific embodiment, the control unit is further configured to control the temperature adjustment assembly to adjust the temperature in the etching chamber to a third set temperature higher than the second set temperature after the oxide mask is etched, and maintain the temperature in the etching chamber at the third set temperature for a set time period, so as to anneal the substrate from which the oxide mask is removed. So as to remove reaction residues and residual gases on the substrate.
In one embodiment, the third set temperature is 300 ℃ or more and the set time period is 30 seconds or more to improve the effect of removing the reaction residue and the residual gas on the substrate.
In a specific embodiment, the etching apparatus further comprises a hydrogen plasma etching component disposed in the etching chamber, wherein the hydrogen plasma etching component is used for performing hydrogen passivation on the surface of the substrate after the oxide mask is removed. And the hydrogen plasma etching component is in communication connection with the control unit, and the control unit is also used for controlling the hydrogen plasma etching component to perform hydrogen passivation on the surface of the substrate after the oxide mask is removed after the temperature in the etching cavity is maintained at a third set temperature for a set time period. The surface of the substrate after the oxide mask is removed is relatively flat, and the oxidation resistance of the surface of the substrate after the oxide mask is removed is improved.
In a specific embodiment, the etching apparatus further comprises a nitrogen gas supply assembly arranged in the etching chamber and used for introducing nitrogen gas into the etching chamber, and before the next process is carried out, the substrate after the oxide mask is removed is protected in a nitrogen gas environment, so that the contact with the external air is blocked, and the surface of the substrate after the oxide mask is removed is prevented from being oxidized.
Drawings
Fig. 1 is a block diagram of an etching apparatus according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a substrate including an oxide mask and a shallow trench etch in accordance with an embodiment of the present invention;
fig. 3 is a cross-sectional view of the shallow trench and substrate after removal of the oxide mask in accordance with an embodiment of the present invention.
Reference numerals:
10-etching cavity 11-carrying platform 12-plasma etching assembly
13-pressure regulating assembly 14-control unit 15-temperature regulating assembly
16-gas blowing assembly 17-hydrogen plasma etching assembly
18-Nitrogen gas supply 20-substrate 21-shallow etch trench
22-isolation structure 23-oxide mask
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
For convenience of understanding the etching apparatus provided in the embodiment of the present invention, an application scenario of the etching apparatus provided in the embodiment of the present invention is described below, and the etching apparatus is used for etching an oxide mask on a substrate. The etching apparatus will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1, an etching apparatus according to an embodiment of the present invention includes an etching chamber 10, and a carrier 11 disposed in the etching chamber 10 and configured to hold a substrate 20 thereon. When the etching chamber 10 is provided, a housing having a hollow sealed chamber for accommodating the stage 11 and other components may be used as a chamber wall of the etching chamber 10. When the stage 11 is provided, the stage 11 may have a stage structure capable of supporting the substrate 20, and a vacuum suction hole for fixing the substrate 20 to the stage 11 may be provided on a support surface of the stage 11. The substrate 20 held on the stage 11 may include an oxide mask 23 located on the uppermost portion of the substrate 20, and a structure disposed below the substrate 20, for example, referring to fig. 2, the substrate 20 may be the substrate 20 on which the shallow etching trenches 21 have just been etched, the substrate 20 may have the shallow etching trenches 21, the isolation structures 22 for isolating two adjacent shallow etching trenches 21, and the oxide mask 23 covering the upper surfaces of the isolation structures 22. Referring to fig. 3, after removing the oxide mask 23, the oxide mask 23 is not present on the upper surface of the isolation structure 22 between the shallow etched trenches 21 on the substrate 20 of the substrate 20.
With continued reference to fig. 1, a plasma etching assembly 12 for etching the oxide mask 23 is further disposed in the etching chamber 10, and the plasma etching assembly 12 may be a plasma etching machine in the prior art, and includes two electrode plates disposed below the carrier 11 and above the substrate 20, and a radio frequency power supply connected to the two electrode plates, so that the generated plasma can etch the oxide mask 23 on the substrate 20 to remove the oxide mask 23.
In the etching apparatus shown in fig. 1, a pressure regulating assembly 13 for regulating the pressure in the etching chamber 10 is further disposed in the etching chamber 10. The pressure regulating assembly 13 may be a pressure regulating device capable of regulating the pressure in the sealed chamber in the prior art. The pressure regulating assembly 13 can regulate the pressure inside the etching chamber 10, so that the pressure inside the etching chamber 10 can be changed.
As shown in fig. 1, the etching apparatus further comprises a control unit 14 communicatively connected to the plasma etching assembly 12 and the pressure regulating assembly 13. The control unit 14 may be a terminal such as a computer, notebook, cell phone, etc. When the control unit 14 is in communication connection with the plasma etching component 12 and the pressure regulating component 13, the control unit 14 can be in communication connection in a wired manner or in communication connection in a wireless manner, so that the control unit 14 can send a control command to the plasma etching component 12 and the pressure regulating component 13. The control unit 14 is used for controlling the pressure regulating assembly 13 to adjust the pressure inside the etching chamber 10 to be changed in a pulse manner, that is, controlling the pressure inside the etching chamber 10 to be changed in a pulse manner such as high-low-high-low. The control unit 14 is further configured to control the plasma etching component 12 to etch the oxide mask 23 when the pressure in the etching chamber 10 is a first set pressure; and controlling the plasma etching component 12 to stop etching the oxide mask 23 on the substrate 20 when the pressure in the etching chamber 10 is the second set pressure. Wherein the first set pressure is greater than the second set pressure. By arranging the plasma etching component 12 and the pressure regulating component 13 in the etching chamber 10, the control unit 14 controls the pressure in the etching chamber 10 to change in a pulse mode. And when the pressure in the etching chamber 10 is a first set pressure, the plasma etching component 12 etches the oxide mask 23, and when the pressure in the etching chamber 10 is a second set pressure, the plasma etching component 12 stops etching. The plasma etching component 12 is in a discontinuous pulse type etching state such as high-pressure etching, low-pressure stop etching, high-pressure etching and the like, so that the oxide mask 23 is removed, and the silicon groove structure with a larger height-width ratio below the oxide mask 23 is prevented from inclining or collapsing. Compared with the wet etching mode in the prior art, the scheme of the application adopts dry etching and is in a discontinuous pulse type etching state such as high-pressure etching, low-pressure stop etching, high-pressure etching and the like, so that the structure with a larger height-width ratio below the oxide mask 23 can be prevented from inclining or collapsing.
In the determination of the first set pressure and the second set pressure, the first set pressure can be 2Torr or less, specifically, the first set pressure can be 2Torr, 1.9Torr, 1.8Torr, 1.7Torr, 1.6Torr, 1.5Torr or the like is not more than 2 Torr. The second set pressure can be less than 500mTorr, and in particular, the second set pressure can be no greater than 500mTorr, such as 500mTorr, 450mTorr, 400mTorr, 350mTorr, 300mTorr, and the like. The plasma etching component 12 is made to etch the oxide mask 23 in a high vacuum environment to improve the etching effect.
When the pressure in the etching chamber 10 is changed in a pulse manner, the control unit 14 may control the pressure regulating assembly 13 to regulate the pressure in the etching chamber 10 to change between the first set pressure and the second set pressure in a square wave manner, so that a short time interval is provided between the first set pressure and the second set pressure, thereby improving the etching effect.
Referring to fig. 1, a gas blowing assembly 16 for blowing gas toward the substrate 20 to blow away the etched substances may also be disposed in the etching chamber 10 so as to blow the etched reaction products off the substrate 20. The air blowing assembly 16 is in communication connection with the control unit 14, and the specific connection mode may be a wireless connection mode, or a wired connection mode, so that the control unit 14 can control whether the air blowing assembly 16 works. The control unit 14 is further configured to control the gas blowing assembly 16 to blow gas towards the substrate 20 when the pressure inside the etching chamber 10 is a second set pressure; the gas-blowing assembly 16 is controlled to stop blowing gas toward the substrate 20 when the pressure in the etching chamber 10 is a first set pressure. By arranging the air blowing component 16, and adopting a discontinuous pulse type etching blowing state such as high-pressure etching, low-pressure blowing, high-pressure etching, low-pressure blowing and the like between the plasma etching component 12 and the air blowing component 16, when the plasma etching component 12 stops etching, the air blowing component 16 blows air to the substrate 20 to remove the substances which are just etched, so that the etching of the next plasma etching component 12 to the oxide mask 23 which is not etched is not influenced, the etching effect is improved, and meanwhile, the etched substances are prevented from polluting a microcircuit structure on the substrate 20.
With continued reference to FIG. 1, a temperature adjustment assembly 15 for adjusting the temperature within the etch chamber 10 can also be provided within the etch chamber 10 to adjust the temperature within the etch chamber 10 to change the temperature of the etch environment. The temperature adjusting assembly 15 is in communication connection with the control unit 14, and the specific connection mode may be a wired connection mode or a wireless connection mode, so that the control unit 14 can control the temperature adjusting assembly 15 to work. The control unit 14 can also be used to control the temperature adjustment assembly 15 to adjust the temperature in the etching chamber 10 to be changed in a pulse manner. The control unit 14 can be further configured to control the plasma etching component 12 to etch the oxide mask 23 when the temperature in the etching chamber 10 is a first set temperature; and controlling the plasma etching component 12 to stop etching the oxide mask 23 when the temperature in the etching cavity 10 is the second set temperature. Wherein the first set temperature is less than the second set temperature. By arranging the temperature adjusting assembly 15, the plasma etching assembly adopts intermittent pulse type etching states such as etching at high pressure and low temperature, stopping etching at low pressure and high temperature, etching at high pressure and low temperature and the like, so that the etching effect is improved.
When the temperature in the etching chamber 10 is specifically determined, the first set temperature may be 80 ℃ or higher, specifically, the first set temperature may be 80 ℃, 90 ℃, 100 ℃, 110 ℃, 120 ℃, 130 ℃, 140 ℃ or lower, and the like, so that the etching and the blowing are performed in a high-temperature environment, thereby improving the etching and the blowing effects.
When the temperature adjustment assembly 15 is specifically arranged, the temperature adjustment assembly 15 may include an Xe flash lamp arranged in the etching chamber 10 and used for heating the medium in the etching chamber 10, and the Xe flash lamp is used for heating the medium in the etching chamber 10 to improve the temperature transformation effect in the etching chamber 10.
When it is determined that the temperature in the etching chamber 10 changes in a pulse manner, the control unit 14 may control the temperature adjustment assembly 15 to adjust the temperature in the etching chamber 10 to change between the first set temperature and the second set temperature in a square wave manner, so that the switching time between the first set temperature and the second set temperature is short, thereby improving the etching and blowing effects.
In determining the relationship between the gas purging and the temperature, the control unit 14 can be further configured to control the gas purging assembly 16 to purge the substrate 20 when the temperature in the etching chamber 10 is a second set temperature; the gas-blowing assembly 16 is controlled to stop blowing gas toward the substrate 20 when the temperature in the etching chamber 10 is a first set temperature. The etching and blowing effects are improved by adopting discontinuous pulse type etching modes such as high-pressure low-temperature etching, low-pressure high-temperature blowing, high-pressure low-temperature etching, low-pressure high-temperature blowing and the like.
In addition, the control unit 14 may be further configured to control the temperature adjustment assembly 15 to adjust the temperature in the etching chamber 10 to a third set temperature higher than the second set temperature after the oxide mask 23 is etched, and maintain the temperature in the etching chamber 10 at the third set temperature for a set time period, so as to anneal the substrate 20 after the oxide mask 23 is removed. So as to remove reaction residues and residual gases on the substrate 20. For example, substrate 20, shown in fig. 3, with oxide mask 23 just etched away may be annealed to remove residues and contaminants on substrate 20.
When the third set temperature is determined, the third set temperature may be 300 ℃ or higher, and specifically, the third set temperature may be 300 ℃, 310 ℃, 320 ℃, 330 ℃, 340 ℃, 350 ℃ or the like, which is not less than 300 ℃. In the specific determination of the size of the set time period, the set time period may be 30 seconds or more, and specifically, the size of the set time period may be 30 seconds, 32 seconds, 35 seconds, 37 seconds, 40 seconds, or the like, for not less than 30 seconds, so as to improve the effect of removing the reaction residues and the residual gas on the substrate 20.
Referring to fig. 1, a hydrogen plasma etching assembly 17 may also be disposed within the etching chamber 10, the hydrogen plasma etching assembly 17 being configured to perform hydrogen passivation on the surface of the substrate 20 after the oxide mask 23 is removed. The hydrogen plasma etching component 17 is in communication connection with the control unit 14, and the specific connection mode may be a wireless connection mode or a wired connection mode, so that the control unit 14 can control whether the hydrogen plasma etching component 17 works or not. The control unit 14 may be further configured to control the hydrogen plasma etching assembly 17 to perform hydrogen passivation on the surface of the substrate 20 after removing the oxide mask 23 after maintaining the temperature in the etching chamber 10 at the third set temperature for a set time period. For example, the substrate 20 shown in fig. 3, on which the oxide mask 23 has just been etched, may be subjected to hydrogen passivation, so that the surface of the substrate 20 after the oxide mask 23 is removed is relatively flat, and the oxidation resistance of the surface of the substrate 20 after the oxide mask 23 is removed is improved.
Referring to fig. 1, a nitrogen gas supply assembly 18 for supplying nitrogen gas into the etching chamber 10 may be further disposed in the etching chamber 10, and before proceeding to the next process, the substrate 20 after removing the oxide mask 23 is protected in a nitrogen gas environment, so as to block contact with the outside air and prevent oxidation of the surface of the substrate 20 after removing the oxide mask 23. The nitrogen gas supply assembly 18 may be communicatively connected to the control unit 14, and the connection may be a wired connection or a wireless connection, so that the control unit 14 can control whether the nitrogen gas supply assembly 18 operates.
By arranging the plasma etching component 12 and the pressure regulating component 13 in the etching cavity 10, the control unit 14 controls the pressure in the etching cavity 10 to change in a pulse mode; and when the pressure in the etching chamber 10 is a first set pressure, the plasma etching component 12 etches the oxide mask 23, and when the pressure in the etching chamber 10 is a second set pressure, the plasma etching component 12 stops etching. The plasma etching component 12 is in a discontinuous pulse type etching state such as high-pressure etching, low-pressure stop etching, high-pressure etching and the like, so that the oxide mask 23 is removed, and the structure with a larger height-width ratio below the oxide mask 23 is prevented from inclining or collapsing. Compared with the wet etching mode in the prior art, the scheme of the application adopts dry etching and is in a discontinuous pulse type etching state such as high-pressure etching, low-pressure stop etching, high-pressure etching and the like, so that the silicon groove structure with a larger height-width ratio below the oxide mask 23 can be prevented from inclining or collapsing.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. An etching apparatus for etching an oxide mask on a substrate, comprising:
etching the cavity;
a stage disposed within the etch chamber and configured to hold the substrate thereon;
the plasma etching component is arranged in the etching cavity and is used for etching the oxide mask;
the pressure regulating assembly is arranged on the etching cavity and is used for regulating the pressure intensity in the etching cavity;
the control unit is in communication connection with the plasma etching assembly and the pressure regulating assembly; the control unit is used for controlling the pressure regulating assembly to regulate the pressure in the etching cavity to change in a pulse mode;
the control unit is also used for controlling the plasma etching component to etch the oxide mask when the pressure intensity in the etching cavity is at a first set pressure intensity; when the pressure in the etching cavity is a second set pressure, controlling the plasma etching component to stop etching the oxide mask on the substrate; wherein the first set pressure is greater than the second set pressure.
2. The etching apparatus according to claim 1, further comprising a blowing assembly disposed in the etching chamber and configured to blow gas toward the substrate to blow away the etched reaction products, and the blowing assembly is communicatively connected to the control unit;
the control unit is also used for controlling the air blowing assembly to blow air to the substrate when the pressure intensity in the etching cavity is the second set pressure intensity; and when the pressure intensity in the etching cavity is the first set pressure intensity, controlling the blowing assembly to stop blowing air to the substrate.
3. The etching apparatus of claim 1, wherein the first set pressure is below 2Torr and the second set pressure is below 500 mTorr.
4. The etching apparatus of claim 3, wherein the control unit controls the pressure regulating assembly to regulate the pressure within the etching chamber to vary in a square wave between the first set pressure and the second set pressure.
5. The etching apparatus according to claim 2, further comprising a temperature adjustment assembly disposed in the etching chamber and configured to adjust a temperature in the etching chamber, wherein the temperature adjustment assembly is communicatively connected to the control unit;
the control unit is also used for controlling the temperature regulating component to regulate the temperature in the etching cavity to change in a pulse mode; the control unit is also used for controlling the plasma etching component to etch the oxide mask when the temperature in the etching cavity is a first set temperature; when the temperature in the etching cavity is a second set temperature, controlling the plasma etching component to stop etching the oxide mask; wherein the first set temperature is less than the second set temperature.
6. The etching apparatus according to claim 5, wherein the control unit is further configured to control the gas blowing assembly to blow gas toward the substrate when the temperature in the etching chamber is the second set temperature; and when the temperature in the etching cavity is the first set temperature, controlling the air blowing assembly to stop blowing air to the substrate.
7. The etching apparatus of claim 6, wherein the control unit controls the temperature adjustment assembly to adjust the temperature in the etching chamber to vary in a square wave between the first set temperature and the second set temperature.
8. The etching apparatus of claim 5, wherein the control unit is further configured to control the temperature adjustment assembly to adjust the temperature in the etching chamber to a third set temperature higher than the second set temperature after the oxide mask is etched, and to maintain the temperature in the etching chamber at the third set temperature for a set time period to anneal the substrate after the oxide mask is removed.
9. The etching apparatus according to claim 8, wherein the third set temperature is 300 ℃ or higher, and the set time period is 30 seconds or longer.
10. The etching apparatus of claim 8, further comprising a hydrogen plasma etching component disposed within the etching chamber, the hydrogen plasma etching component configured to perform hydrogen passivation on the surface of the substrate after the oxide mask is removed;
and the hydrogen plasma etching component is in communication connection with the control unit, and the control unit is further used for controlling the hydrogen plasma etching component to perform hydrogen passivation on the surface of the substrate after the oxide mask is removed after the temperature in the etching cavity is maintained at the third set temperature for a set time period.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011555729.7A CN114678249A (en) | 2020-12-24 | 2020-12-24 | Etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| US20200263309A1 (en) * | 2019-02-18 | 2020-08-20 | Tokyo Electron Limited | Etching method |
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