CN114678223A - Treatment process for formation aluminum foil of low-leakage-current laminated capacitor and laminated capacitor - Google Patents
Treatment process for formation aluminum foil of low-leakage-current laminated capacitor and laminated capacitor Download PDFInfo
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- CN114678223A CN114678223A CN202210484604.2A CN202210484604A CN114678223A CN 114678223 A CN114678223 A CN 114678223A CN 202210484604 A CN202210484604 A CN 202210484604A CN 114678223 A CN114678223 A CN 114678223A
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- aluminum foil
- laminated capacitor
- leakage current
- formed aluminum
- dendritic
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 95
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 95
- 239000011888 foil Substances 0.000 title claims abstract description 93
- 239000003990 capacitor Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 26
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 21
- 230000008569 process Effects 0.000 title claims abstract description 15
- 238000007598 dipping method Methods 0.000 claims abstract description 28
- 239000002994 raw material Substances 0.000 claims abstract description 17
- 239000000654 additive Substances 0.000 claims abstract description 16
- 230000000996 additive effect Effects 0.000 claims abstract description 15
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011347 resin Substances 0.000 claims abstract description 12
- 229920005989 resin Polymers 0.000 claims abstract description 12
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 10
- 239000002904 solvent Substances 0.000 claims abstract description 9
- 150000003839 salts Chemical class 0.000 claims abstract description 8
- 239000002253 acid Substances 0.000 claims abstract description 7
- 230000008439 repair process Effects 0.000 claims abstract description 5
- 229920002521 macromolecule Polymers 0.000 claims description 18
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 14
- 125000003118 aryl group Chemical group 0.000 claims description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 10
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 9
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 8
- 125000001931 aliphatic group Chemical group 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 8
- 239000000412 dendrimer Substances 0.000 claims description 8
- 229920000736 dendritic polymer Polymers 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 7
- 229920006150 hyperbranched polyester Polymers 0.000 claims description 7
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 claims description 5
- 229920000962 poly(amidoamine) Polymers 0.000 claims description 4
- 239000004952 Polyamide Substances 0.000 claims description 3
- 150000003863 ammonium salts Chemical class 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000010276 construction Methods 0.000 abstract description 13
- 238000005476 soldering Methods 0.000 abstract description 12
- 238000012797 qualification Methods 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 6
- 239000002052 molecular layer Substances 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 44
- 230000000052 comparative effect Effects 0.000 description 31
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 239000008367 deionised water Substances 0.000 description 13
- 229910021641 deionized water Inorganic materials 0.000 description 13
- 238000005470 impregnation Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 230000006872 improvement Effects 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- -1 4-nitrophenyl dicyclohexylammonium phosphate Chemical compound 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 206010063385 Intellectualisation Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GJYJYFHBOBUTBY-UHFFFAOYSA-N alpha-camphorene Chemical compound CC(C)=CCCC(=C)C1CCC(CCC=C(C)C)=CC1 GJYJYFHBOBUTBY-UHFFFAOYSA-N 0.000 description 1
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 1
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 1
- NHJPVZLSLOHJDM-UHFFFAOYSA-N azane;butanedioic acid Chemical compound [NH4+].[NH4+].[O-]C(=O)CCC([O-])=O NHJPVZLSLOHJDM-UHFFFAOYSA-N 0.000 description 1
- PHKGGXPMPXXISP-DFWYDOINSA-N azanium;(4s)-4-amino-5-hydroxy-5-oxopentanoate Chemical compound [NH4+].[O-]C(=O)[C@@H]([NH3+])CCC([O-])=O PHKGGXPMPXXISP-DFWYDOINSA-N 0.000 description 1
- PFHRYNRSRUACEX-UHFFFAOYSA-N azanium;2,3,3,3-tetrafluoro-2-[1,1,2,3,3,3-hexafluoro-2-(trifluoromethoxy)propoxy]propanoate Chemical compound [NH4+].[O-]C(=O)C(F)(C(F)(F)F)OC(F)(F)C(F)(C(F)(F)F)OC(F)(F)F PFHRYNRSRUACEX-UHFFFAOYSA-N 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000019837 monoammonium phosphate Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- LQAZPMXASFNKCD-UHFFFAOYSA-M potassium;dodecane-1-sulfonate Chemical compound [K+].CCCCCCCCCCCCS([O-])(=O)=O LQAZPMXASFNKCD-UHFFFAOYSA-M 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
- H01G9/045—Electrodes or formation of dielectric layers thereon characterised by the material based on aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/08—Housing; Encapsulation
- H01G9/10—Sealing, e.g. of lead-in wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Laminated Bodies (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention discloses a treatment process of a formed aluminum foil of a low leakage current laminated capacitor and the laminated capacitor prepared by applying the preparation method, wherein the treatment process of the formed aluminum foil of the low leakage current laminated capacitor comprises the following steps: and (3) dipping the formed aluminum foil in a deep treatment solution and applying voltage, wherein the deep treatment solution comprises the following raw materials in percentage by mass: 0.1-1% of acid, 0.15-1.5% of salt, 95-99% of first solvent and 0.75-2.5% of additive, wherein the additive is fluorocarbon resin containing 5-15 fluorine atoms; and (4) dipping the formed aluminum foil into a macromolecular construction solution. The invention can effectively penetrate into the deep of the hole of the aluminum foil, efficiently repair the weakest position during reflow soldering mounting, form a dendritic network molecular layer on the surface of the formed aluminum foil, reduce the leakage current of the laminated capacitor and improve the qualification rate of the leakage current after the formation of the aluminum foil, and simultaneously keep the stability of the leakage current during reflow soldering mounting.
Description
Technical Field
The invention relates to the technical field of capacitors, in particular to a processing technology of a formed aluminum foil of a low-leakage current laminated capacitor and the laminated capacitor.
Background
In recent years, with the development requirements of miniaturization, intellectualization, high power, lead-free mounting and new packaging technology of electronic complete machines, the chip type solid-state aluminum electrolytic capacitor is rapidly developed. The laminated capacitor belongs to one of the patch type solid aluminum electrolytic capacitors, and the traditional laminated capacitor plays an important role in solving the problems of miniaturization, lead-free property, wider working temperature range and the like. With the continuous expansion of the application of the laminated capacitor and the continuous promotion of customer requirements, higher requirements are put forward on the performance stability of the laminated capacitor.
The current laminated capacitor has low leakage current qualification rate, and the short circuit problem caused by the rapid increase of the leakage current is easy to occur during reflow soldering mounting. In addition, the number of the used laminated capacitors is huge, but at present, no efficient method for carrying out full inspection on the laminated capacitors mounted on a circuit board exists, and once a short-circuit capacitor exists in a circuit, a great risk is caused. Therefore, how to further improve the leakage current qualification rate of the multilayer capacitor and the stability of the leakage current during reflow mounting is a technical problem to be solved urgently in the industry.
Disclosure of Invention
The invention mainly aims to provide a processing technology for forming an aluminum foil of a low-leakage current laminated capacitor and the laminated capacitor, and aims to solve the technical problems that the leakage current qualification rate of the laminated capacitor and the stability of leakage current during reflow soldering mounting in the prior art are low.
In order to achieve the above object, the present invention provides a processing technology for forming an aluminum foil of a low leakage current multilayer capacitor, comprising the following steps:
s1: carrying out deep repair treatment on the formed aluminum foil: and (3) dipping the formed aluminum foil in a deep treatment solution and applying voltage, wherein the deep treatment solution comprises the following raw materials in percentage by mass: 0.1-1% of acid, 0.15-1.5% of salt, 95-99% of first solvent and 0.75-2.5% of additive, wherein the additive is fluorocarbon resin containing 5-15 fluorine atoms, and the applied voltage value is 1.05-1.45 times of the formation voltage value of the formed aluminum foil;
s2: constructing a dendritic macromolecule layer on the formed aluminum foil: dipping the formed aluminum foil processed in the step S1 in a macromolecule constructing solution, removing the solution on the surface of the formed aluminum foil and drying, wherein the macromolecule constructing solution comprises the following raw materials in percentage by mass: 0.01 to 0.05 percent of dendritic polymer and 99.95 to 99.99 percent of second solvent.
The method has the advantages that firstly, the formed aluminum foil is put into the deep treatment solution for deep repair treatment, salt and additive components in the deep treatment solution can effectively permeate into the deep holes of the aluminum foil, the weakest position in reflow soldering mounting is efficiently repaired, and the leakage current of the laminated capacitor is reduced; and then the formed aluminum foil is put into the macromolecular construction solution for dipping, a dendritic network molecular layer can be formed on the surface of the formed aluminum foil, and the method is favorable for more regularly and orderly covering dispersion liquid during subsequent polymerization of conductive polymers, so that the impact during plastic packaging is reduced, and the stability of leakage current during reflow soldering mounting is maintained. After the treatment of the formed aluminum foil, the leakage current of the laminated capacitor can be reduced, the qualification rate of the leakage current can be improved, and the stability of the leakage current during reflow soldering mounting can be kept.
Preferably, the salt is at least one of an aliphatic sulfonate, an aromatic sulfonate, and an ammonium salt having a skeleton containing 4 to 8 carbon atoms. When power is applied, the defect part of the formed aluminum foil can be chemically repaired, and the leakage current is reduced.
Preferably, the acid is at least one of aromatic sulfonic acid, phosphoric acid, aliphatic sulfonic acid, and hypophosphorous acid. And oxidizing the exposed defects of the formed aluminum foil to form a non-conductive oxide film, so that the leakage current of the product is reduced.
Preferably, the dendritic polymer is at least one of dendritic polyamidoamine, dendritic epoxy resin and dendritic hyperbranched polyester.
Preferably, the number average molecular weight of the dendritic polyamide is 3100-6011, the hydroxyl value of the dendritic epoxy resin is 500-700, and the hydroxyl value of the dendritic hyperbranched polyester is 500-600.
Preferably, in the step S2, the solution formed on the surface of the aluminum foil is removed by high pressure air, and the pressure of the high pressure air is 0.3MPa to 0.7 MPa.
Preferably, in the step S2, the drying temperature is 40 to 50 ℃, and the drying time is 30 to 70 minutes. Drying can promote the dendritic macromolecules to be firmly jointed with the formed aluminum foil, reduce the leakage current of the product and improve the plastic packaging impact resistance of the product.
In another aspect of the present invention, a laminated capacitor manufactured by applying the treatment process of the formation of the laminated capacitor with low leakage current into the aluminum foil is also provided.
By adopting the processing technology of the formation aluminum foil of the low leakage current laminated capacitor, the laminated capacitor can improve the qualification rate of leakage current and the stability of leakage current during reflow soldering mounting.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In addition, technical solutions between the embodiments may be combined with each other, but must be based on the realization of the technical solutions by a person skilled in the art, and when the technical solutions are contradictory to each other or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
A treatment process for a formed aluminum foil of a low leakage current laminated capacitor comprises the following steps:
step S1: carrying out deep repair treatment on the formed aluminum foil: the formed aluminum foil is immersed in the deep treatment solution, and a voltage is applied.
Wherein the deep treatment solution comprises the following raw materials in percentage by mass: 0.1 to 1 percent of acid, 0.15 to 1.5 percent of salt, 95 to 99 percent of first solvent and 0.75 to 2.5 percent of additive;
the acid is one or more of aromatic sulfonic acid, phosphoric acid, aliphatic sulfonic acid and hypophosphorous acid;
the salt is selected from one or more than two of aliphatic sulfonate, aromatic sulfonate and ammonium salt with 4-8 carbon atoms in the framework;
the first solvent is one or more selected from water and ethanol;
the additive is fluorocarbon resin containing 5-15 fluorine atoms;
the applied voltage value is 1.05 to 1.45 times of the formation voltage value of the formation aluminum foil;
the dipping time is 6 to 60 minutes, and the dipping temperature is 5 to 45 ℃.
Step S2: constructing a dendritic macromolecule layer on the formed aluminum foil: and (4) dipping the formed aluminum foil processed in the step S1 in a macromolecule constructing solution, removing the solution on the surface of the formed aluminum foil and drying.
The macromolecule construction solution comprises the following raw materials in percentage by mass: 0.01 to 0.05 percent of dendritic polymer and 99.95 to 99.99 percent of second solvent;
the dendritic polymer is one or a mixture of more than two of dendritic polyamidoamine, dendritic epoxy resin and dendritic hyperbranched polyester, the number average molecular weight of the dendritic polyamide is 3100-6011, the hydroxyl value of the dendritic epoxy resin is 500-700, and the hydroxyl value of the dendritic hyperbranched polyester is 500-600;
the second solvent is a mixed solution of water and ethanol;
the dipping time is 10 minutes to 30 minutes, and the dipping temperature is 20 ℃ to 30 ℃;
the pressure intensity of the high-pressure air is 0.3MPa to 0.7 MPa;
the drying temperature is 40-50 ℃, and the drying time is 30-70 minutes.
On the other hand, the laminated capacitor is manufactured by applying the formed aluminum foil after the treatment process of the formed aluminum foil of the low-leakage-current laminated capacitor is applied, and the formed aluminum foil is manufactured into the laminated capacitor through the processes of conductive polymer synthesis, graphite layer, silver paste layer, stacking, packaging and the like.
The technical solutions of the present invention are further described in detail with reference to the following specific examples, which should be understood as merely illustrative and not limitative.
Comparative example 1:
a laminated capacitor of 2V/330 mu F is manufactured by directly using the conventional formed aluminum foil, and the electric performance of the laminated capacitor is tested.
Example 1:
the embodiment provides a processing technology of a formed aluminum foil of a low leakage current laminated capacitor, which comprises the following steps:
s1: dipping the formed aluminum foil in a deep treatment solution, and applying voltage while dipping, wherein the deep treatment solution comprises the following raw materials in percentage by mass: 0.02% of aromatic sulfonic acid, 0.07% of phosphoric acid, 0.01% of hypophosphorous acid, 0.05% of aliphatic sodium sulfonate, 0.1% of ammonium succinate with a framework containing 4 carbon atoms, 90% of deionized water, 9% of ethanol and 0.75% of fluorocarbon resin with 5 fluorine atoms, wherein the applied voltage value is 1.45 times of the formation voltage value of the formed aluminum foil, namely 3.77V, the impregnation time is 6 minutes, and the impregnation temperature is 45 ℃.
S2: and (3) dipping the formed aluminum foil processed in the step S1 in a macromolecule construction solution for 10 minutes at a dipping temperature of 30 ℃, wherein the macromolecule construction solution comprises the following raw materials in percentage by mass: 0.05% of dendritic polyamidoamine with molecular weight of 6011, 80% of deionized water and 19.95% of ethanol;
then the solution on the surface of the aluminum foil is removed by high pressure air of 0.3MPa, and the aluminum foil is dried for 70 minutes at the temperature of 40 ℃.
A laminated capacitor of 2V/330 mu F is manufactured by adopting the formed aluminum foil prepared by the preparation method, and the electrical property of the laminated capacitor is tested.
Example 2:
the embodiment provides a processing technology of a formed aluminum foil of a low leakage current laminated capacitor, which comprises the following steps:
s1: dipping the formed aluminum foil in a deep treatment solution, and applying voltage while dipping, wherein the deep treatment solution comprises the following raw materials in percentage by mass: 0.5 percent of phosphoric acid, 0.05 percent of aromatic sulfonate, 0.2 percent of ammonium hypophosphite, 0.5 percent of (S) -2-amino glutaric acid ammonium with a framework containing 5 carbon atoms, 90 percent of deionized water, 7.25 percent of ethanol and 1.5 percent of fluorocarbon resin containing 10 fluorine atoms, wherein the applied voltage value is 1.25 times of the formation voltage value of the formed aluminum foil, namely 3.25V, the impregnation time is 33 minutes, and the impregnation temperature is 25 ℃.
S2: and (3) dipping the formed aluminum foil processed in the step S1 in a macromolecule construction solution for 20 minutes at 25 ℃, wherein the macromolecule construction solution comprises the following raw materials in percentage by mass: 0.03 percent of dendritic epoxy resin with the hydroxyl value of 600, 90 percent of deionized water and 9.97 percent of ethanol;
then the solution on the surface of the aluminum foil is removed by high-pressure air of 0.5MPa, and the aluminum foil is dried for 50 minutes at the temperature of 45 ℃.
A laminated capacitor of 2V/330 mu F is manufactured by adopting the formed aluminum foil prepared by the preparation method, and the electrical property of the laminated capacitor is tested.
Example 3:
the embodiment provides a processing technology of a formed aluminum foil of a low leakage current laminated capacitor, which comprises the following steps:
s1: dipping the formed aluminum foil in a deep treatment solution, and applying voltage while dipping, wherein the deep treatment solution comprises the following raw materials in percentage by mass: 1% of hypophosphorous acid, 1% of aromatic sodium sulfonate, 0.5% of 4-nitrophenyl dicyclohexylammonium phosphate with a framework containing 6 carbon atoms, 80% of deionized water, 15% of ethanol and 2.5% of fluorocarbon resin containing 15 fluorine atoms, wherein the applied voltage value is 1.05 times of the formation voltage value of the formed aluminum foil, namely 2.73V, the impregnation time is 60 minutes, and the impregnation temperature is 5 ℃.
S2: and (3) dipping the formed aluminum foil treated in the step S1 in a macromolecular construction solution for 30 minutes at 20 ℃, wherein the macromolecular construction solution comprises the following raw materials in percentage by mass: 0.01 percent of dendritic hyperbranched polyester with a hydroxyl value of 590, 90 percent of deionized water and 9.99 percent of ethanol;
then the solution on the surface of the aluminum foil is removed by high pressure air of 0.7MPa, and the aluminum foil is dried for 30 minutes at 50 ℃.
A laminated capacitor of 2V/330 mu F is manufactured by adopting the formed aluminum foil prepared by the preparation method, and the electrical property of the laminated capacitor is tested.
Example 4:
the embodiment provides a processing technology of a formed aluminum foil of a low leakage current laminated capacitor, which comprises the following steps:
s1: dipping the formed aluminum foil in a deep treatment solution, and applying voltage while dipping, wherein the deep treatment solution comprises the following raw materials in percentage by mass: 0.2 percent of phosphoric acid, 0.05 percent of aliphatic sulfonic acid, 0.45 percent of perfluoro-2, 5-dimethyl-3, 6-dioxaheptanoic acid ammonium salt with a framework containing 7 carbon atoms, 80 percent of deionized water, 18.3 percent of ethanol and 1 percent of fluorocarbon resin containing 7 fluorine atoms, wherein the applied voltage value is 1.15 times of the formation voltage value of the formed aluminum foil, namely 2.99V, the impregnation time is 20 minutes, and the impregnation temperature is 15 ℃.
S2: dipping the formed aluminum foil treated in the step S1 in a macromolecule construction solution for 15 minutes at a temperature of 22 ℃, wherein the macromolecule construction solution comprises the following raw materials in percentage by mass: 0.02% of dendritic epoxy resin with the hydroxyl value of 600, 80% of deionized water and 19.98% of ethanol;
then the solution on the surface of the aluminum foil is removed by high-pressure air of 0.4MPa, and the aluminum foil is dried for 60 minutes at 42 ℃.
A laminated capacitor of 2V/330 mu F is manufactured by adopting the formed aluminum foil prepared by the preparation method, and the electrical property of the laminated capacitor is tested.
Example 5:
the embodiment provides a treatment process for a formed aluminum foil of a low leakage current laminated capacitor, which comprises the following steps:
s1: dipping the formed aluminum foil in a deep treatment solution, and applying voltage while dipping, wherein the deep treatment solution comprises the following raw materials in percentage by mass: 0.75% of phosphoric acid, 0.05% of ammonium dihydrogen phosphate, 0.1% of aromatic sodium sulfonate, 1% of octyl quaternary ammonium with 8 carbon atoms in the skeleton, 90% of deionized water, 6.1% of ethanol and 2% of fluorocarbon resin with 12 fluorine atoms, wherein the applied voltage value is 1.35 times of the formation voltage value of the formed aluminum foil, namely 3.51V, the impregnation time is 45 minutes, and the impregnation temperature is 35 ℃.
S2: and (3) dipping the formed aluminum foil processed in the step S1 in a macromolecule construction solution for 25 minutes at 27 ℃, wherein the macromolecule construction solution comprises the following raw materials in percentage by mass: 0.04% of dendritic epoxy resin with the hydroxyl value of 600, 85% of deionized water and 14.96% of ethanol;
then the solution on the surface of the aluminum foil is removed by high pressure air of 0.6MPa, and the aluminum foil is dried for 40 minutes at 47 ℃.
A laminated capacitor of 2V/330 mu F is manufactured by adopting the formed aluminum foil prepared by the preparation method, and the electrical property of the laminated capacitor is tested.
Comparative example 2:
comparative example 2 the procedure was the same as example 2 except that: no additive was used in step S1 and the deionized water content was increased accordingly.
Comparative example 3:
the procedure of comparative example 3 is the same as example 3 except that: no additive was used in step S1 and the deionized water content was increased accordingly.
Comparative example 4:
comparative example 4 the procedure was the same as example 2, except that: in the step S, more additives are used, the mass percent of the fluorocarbon resin containing 10 fluorine atoms is 8%, and the content of deionized water is correspondingly reduced.
Comparative example 5:
comparative example 5 the procedure was the same as example 2, except that: the existing additive potassium dodecylsulfonate is used.
Comparative example 6:
comparative example 6 is the same as example 2 except that: the voltage applied in step S1 is 0.5 times the formation voltage of the formation aluminum foil.
Comparative example 7:
comparative example 7 is the same as example 2 except that: the voltage applied in step S1 is 2 times the formation voltage of the formation aluminum foil.
Comparative example 8:
the procedure of this comparative example 8 is the same as example 2 except that: step S2 is not performed.
Comparative example 9:
the procedure of comparative example 9 is the same as example 3 except that: step S2 is not performed.
Comparative example 10:
the procedure of this comparative example 10 is the same as example 2 except that: step S2 uses an existing other polymer acrylic resin.
The test results of the above examples and comparative examples are given in the following table:
as can be seen from the above table data:
as can be seen from comparison between comparative example 1 and examples 1 to 5, compared with the conventional laminated capacitor prepared from the formed aluminum foil, the laminated capacitor prepared from the formed aluminum foil treated by the method provided by the invention can greatly reduce the leakage current of the laminated capacitor and improve the qualification rate of the leakage current, and can maintain the stability of the leakage current during reflow soldering mounting.
It can be seen from the comparison between example 2 and comparative example 2, and between example 3 and comparative example 3 that when the fluorocarbon resin is not used as an additive, the improvement of the leakage current has a certain effect, but the improvement range is not large. It can be seen from the comparison between example 2 and comparative example 4 that when the content of fluorocarbon resin is higher, the additive has a certain effect on improving the leakage current, but the improvement range is not large, which indicates that the effect of the mass percentage of the present invention is better. As can be seen from comparison of example 2 with comparative example 2, comparative example 4, and comparative example 5, when the conventional additive was used, the improvement effect was not significant, and the leakage current stability was also reduced.
As can be seen from comparison of example 2 with comparative examples 6 and 7, when the applied voltage value is too small, the improvement effect is not significant; when the applied voltage is too large, the improvement effect is not obtained, and the leakage current is increased.
The comparison between example 2 and comparative example 8, and between example 3 and comparative example 9 shows that when the dendritic network molecular layer is not formed on the surface of the formed aluminum foil, the leakage current after reflow soldering is increased, which indicates that the formation of the dendritic network molecular layer on the surface of the formed aluminum foil has the effect of improving the leakage current after reflow soldering. It can be seen from the comparison between example 2 and comparative example 10 that the effect of the dendrimer used in the present invention is better when the existing polymer is used, the leakage current is reduced and the increase in leakage current after reflow soldering is reduced, but the comparison is not as good as the comparison with the dendrimer used in the present invention.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the present specification and directly/indirectly applied to other related technical fields within the spirit of the present invention are included in the scope of the present invention.
Claims (8)
1. A treatment process for a formed aluminum foil of a low leakage current laminated capacitor is characterized by comprising the following steps:
s1: carrying out deep repair treatment on the formed aluminum foil: and (3) dipping the formed aluminum foil in a deep treatment solution and applying voltage, wherein the deep treatment solution comprises the following raw materials in percentage by mass: 0.1-1% of acid, 0.15-1.5% of salt, 95-99% of first solvent and 0.75-2.5% of additive, wherein the additive is fluorocarbon resin containing 5-15 fluorine atoms, and the applied voltage value is 1.05-1.45 times of the formation voltage value of the formed aluminum foil;
s2: constructing a dendritic macromolecule layer on the formed aluminum foil: dipping the formed aluminum foil processed in the step S1 in a macromolecule constructing solution, removing the solution on the surface of the formed aluminum foil and drying, wherein the macromolecule constructing solution comprises the following raw materials in percentage by mass: 0.01 to 0.05 percent of dendritic polymer and 99.95 to 99.99 percent of second solvent.
2. The process for forming an aluminum foil for a laminated capacitor having a low leakage current according to claim 1, wherein the salt is at least one of an aliphatic sulfonate, an aromatic sulfonate, and an ammonium salt having a skeleton containing 4 to 8 carbon atoms.
3. The process for forming aluminum foil for use in a laminated capacitor having low leakage current according to claim 1, wherein the acid is at least one of aromatic sulfonic acid, phosphoric acid, aliphatic sulfonic acid and hypophosphorous acid.
4. The processing technology for formation of aluminum foil of the low leakage current laminated capacitor according to claim 1, wherein the dendritic polymer is at least one of dendritic polyamidoamine, dendritic epoxy resin and dendritic hyperbranched polyester.
5. The process for preparing a capacitor according to claim 4, wherein the dendritic polyamide has a number average molecular weight of 3100 to 6011, the dendritic epoxy resin has a hydroxyl value of 500 to 700, and the dendritic hyperbranched polyester has a hydroxyl value of 500 to 600.
6. The process of claim 1, wherein the solution on the surface of the aluminum foil is removed by high pressure air at a pressure of 0.3MPa to 0.7MPa in step S2.
7. The process of claim 1, wherein in step S2, the baking temperature is 40-50 ℃ and the baking time is 30-70 minutes.
8. A laminated capacitor, which is obtained by applying the treatment process for forming an aluminum foil of a laminated capacitor with low leakage current according to any one of claims 1 to 7.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114864304A (en) * | 2022-05-05 | 2022-08-05 | 肇庆绿宝石电子科技股份有限公司 | Capacitor preparation process capable of reducing leakage current and capacitor |
| CN115106272A (en) * | 2022-07-26 | 2022-09-27 | 广西梧州华锋电子铝箔有限公司 | Method for manufacturing low-leakage-current aluminum foil |
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| CN105405659A (en) * | 2015-12-04 | 2016-03-16 | 福建国光电子科技股份有限公司 | Preparation method of multi-layer chip polymer solid aluminum electrolytic capacitor |
| CN114864304A (en) * | 2022-05-05 | 2022-08-05 | 肇庆绿宝石电子科技股份有限公司 | Capacitor preparation process capable of reducing leakage current and capacitor |
| CN115106272A (en) * | 2022-07-26 | 2022-09-27 | 广西梧州华锋电子铝箔有限公司 | Method for manufacturing low-leakage-current aluminum foil |
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| CN101840790A (en) * | 2010-05-31 | 2010-09-22 | 福建国光电子科技股份有限公司 | Processing method of aluminum foil in manufacturing process of solid aluminum electrolytic capacitor |
| CN105405659A (en) * | 2015-12-04 | 2016-03-16 | 福建国光电子科技股份有限公司 | Preparation method of multi-layer chip polymer solid aluminum electrolytic capacitor |
| CN114864304A (en) * | 2022-05-05 | 2022-08-05 | 肇庆绿宝石电子科技股份有限公司 | Capacitor preparation process capable of reducing leakage current and capacitor |
| CN115106272A (en) * | 2022-07-26 | 2022-09-27 | 广西梧州华锋电子铝箔有限公司 | Method for manufacturing low-leakage-current aluminum foil |
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| CN114864304B (en) * | 2022-05-05 | 2024-06-21 | 肇庆绿宝石电子科技股份有限公司 | Capacitor preparation process capable of reducing leakage current and capacitor |
| CN115106272A (en) * | 2022-07-26 | 2022-09-27 | 广西梧州华锋电子铝箔有限公司 | Method for manufacturing low-leakage-current aluminum foil |
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