CN114676520A - Design method of linear gradient filter correction baffle - Google Patents
Design method of linear gradient filter correction baffle Download PDFInfo
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- CN114676520A CN114676520A CN202210282142.6A CN202210282142A CN114676520A CN 114676520 A CN114676520 A CN 114676520A CN 202210282142 A CN202210282142 A CN 202210282142A CN 114676520 A CN114676520 A CN 114676520A
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- film thickness
- correction baffle
- baffle
- simulation
- linear gradient
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/10—Geometric CAD
- G06F30/17—Mechanical parametric or variational design
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
Abstract
The invention relates to the field of manufacturing of high-integration spectrum detection devices, in particular to a design method for preparing a correction baffle of a linear gradient filter. The design mode provided by the invention is as follows: firstly, establishing a simulation model about relative film thickness and variables, performing programming simulation by utilizing Mathcad15, designing a program to simulate the film thickness distribution of thermal evaporation equipment, and determining the emission characteristic n of an evaporation source of the thermal evaporation equipment using electron beams through experiments; then introducing a correction baffle function to realize film thickness distribution simulation of the rotary spherical evaporation system and determine an initial correction baffle required by the linear gradient filter; and finally, monitoring the film thickness by using a quartz crystal oscillation method, and performing a single-layer process test to optimize the correction baffle of the gradual change linear filter. According to the method, the correction baffle meeting the requirements can be obtained only 3-4 times by combining simulation with experiments, the characteristic that repeated single-layer process experiments are required for many times in the previous correction baffle design is solved, the manufacturing cost is reduced, and the processing efficiency is improved.
Description
Technical Field
The invention relates to the field of manufacturing of high-integration spectrum detection devices, in particular to a design method for preparing a correction baffle of a linear gradient filter.
Background
A Linear Variable Filter (LVF), also called Linear-Variable optical Filters (LVOF), is a novel light splitting component whose spectral characteristics change linearly at different positions. As can be seen from the grating equation d — m λ, when the film thickness d changes, the corresponding peak transmission wavelength λ also changes synchronously. Therefore, the center wavelength of the linear graded filter is continuously and linearly changed along the wedge-shaped direction. Therefore, the linear gradual filter is used as a light splitting element, and a very narrow-band gradual linear filter film can be obtained to realize high-precision spectrum resolution; has high peak transmittance and wide long-wave cut-off area, and can be suitable for various occasions.
The light splitting technology based on the linear gradient filter is applied to the fields such as military detection, atmospheric monitoring, food safety monitoring, medical analysis and the like. Therefore, the research on the preparation of the compound has very important application value.
At present, the preparation of the linear gradient filter mainly has two ideas:
firstly, a special mechanical structure is additionally arranged in a coating device, and then the preparation of the linear gradient optical filter is completed. Representative patents are CN105911624A, CN212051637U and the like. The designed mechanical structure has high cost, and has great influence on the preparation precision of the linear gradient filter;
And secondly, a correction baffle is used and arranged in a vacuum chamber of the film coating machine, and the thickness of each material is corrected according to the evaporation characteristics of the material, so that the purpose of accurately and controllably distributing the thickness of the material is achieved. Because the method in the prior art can obtain the correction baffle meeting the requirement of the linear gradient filter with one specification only by repeatedly carrying out a plurality of times of single-layer thin film process experiments, the problems of high cost and low efficiency exist.
Disclosure of Invention
The invention aims to provide a design method of a correction baffle of a linear gradient filter, which aims to solve the problems of high cost and low efficiency in the prior art.
In order to realize the purpose, the technical scheme of the invention is as follows: a design method of a linear gradient filter correction baffle comprises the following steps:
1) establishing a simulation model between the relative film thickness and the variable, performing programming simulation by utilizing Mathcad15, designing a program to simulate the film thickness distribution of the thermal evaporation equipment, and determining the emission characteristic n of the evaporation source of the electron beam thermal evaporation equipment through experiments;
2) Introducing a correction baffle function into a simulation model between the relative film thickness and the variable to realize the film thickness distribution simulation of the rotary spherical evaporation system, introducing parameters such as the fixture rotation speed omega of a film coating machine, the deposition characteristic evaporation characteristic n and the like into a Mathcad program, and determining an initial correction baffle required by the linear gradient filter through a mathematical model;
3) and monitoring the film thickness by using a quartz crystal oscillation method, and performing a single-layer process test to optimize the correction baffle of the gradient linear filter.
The variables are the position of the correction baffle, the shape of the correction baffle and the emission characteristic n of the material, the distance H between the plane of the evaporation source and the highest point of the spherical workpiece holder, the curvature radius R of the spherical workpiece holder, the distance L between the evaporation source and the center of the rotating shaft of the spherical workpiece holder, and the three-dimensional coordinates (x, y, z) of any point P on the spherical workpiece holder.
Compared with the prior art, the invention has the following advantages:
1) the invention establishes the relation between the relative film thickness and the variable (the position of the correction baffle on the device, the shape of the correction baffle, the emission characteristic n of the material, the distance H between the plane of the evaporation source and the highest point of the work rest, the curvature radius R of the spherical work rest, the distance L between the evaporation source and the center of the rotating shaft of the work fixture, and the three-dimensional coordinates (x, y, z) of any point P on the work rest) by introducing the function of the correction baffle, realizes the digitization of the correction baffle, and can simulate more accurate film thickness distribution;
2) The deposition condition of the film thickness in the experiment can be accurately simulated through the established relation between the correction baffle and the relative film thickness, and the problems that the calculation of the correction baffle is complex, the film thickness simulation and the condition of the experimental plating film thickness are large in difference and the like are solved.
3) The correcting baffle plate can meet the requirements of linear gradient filters with different specifications, so the design cost is low, and systematic design service can be provided.
4) The method of correcting the baffle is adopted, the complicated mechanical structure is not involved, and the installation and the adjustment on the film coating equipment are simple.
5) Effectively improved machining efficiency: by the process of the invention, Ta2O5With SiO2And (3) correcting the baffle, wherein the correcting baffle required by preparation can be obtained by only 3-4 experiments.
Drawings
FIG. 1 is a schematic view of a linear graded filter coating apparatus;
ta of the optimized linear graded filter of FIG. 22O5Correcting the baffle;
FIG. 3 shows Ta as a high refractive index material2O5N value of evaporation characteristic
FIG. 4 shows Ta after optimization2O5Correcting the baffle, measuring the film thickness of the sampling point, and calculating a relative film thickness distribution diagram;
description of the drawings: 1-Ta2O5A film material crucible; 2, correcting a baffle; 3-a spherical workpiece holder; 4-substrate.
Detailed Description
The present invention is described in further detail below. These examples are intended to illustrate the invention and are not intended to limit the scope of the invention. The implementation conditions adopted by the embodiment can be further adjusted according to specific parameter conditions.
The experimental substrate selected by the invention is strip B270 glass, and the single-layer film material deposited in the experiment is Ta2O5Electron beam thermal evaporation device for experimentsA film coater of type SYRUS.C 1110 was prepared.
The invention relates to a design method of a linear gradient filter correction baffle, which comprises the following steps:
1) firstly, establishing a simulation model of the relation between the relative film thickness and variables, wherein the variables are the position of a correction baffle plate on equipment, the shape of the correction baffle plate, the emission characteristic n of a material, the distance H between a plane where an evaporation source is located and the highest point of a spherical workpiece rack, the curvature radius R of the spherical workpiece rack, the distance L between the evaporation source and the center of a rotating shaft of the spherical workpiece rack, and three-dimensional coordinates (x, y and z) of any point P on the spherical workpiece rack.
2) Determining initial correction baffle information required by the linear gradient filter:
(1) the coating apparatus is a conventional apparatus, as shown in FIG. 1, and comprises Ta2O5The device comprises a film material crucible 1, a correction baffle 2, a spherical workpiece 3 and a substrate 4. Removing the left and right baffles, monitoring the film thickness by quartz crystal oscillation method without baffles, placing a sample wafer on a spherical workpiece holder with curvature radius of 750mm, and depositing a layer of 500nm Ta2O5Calculating the relative film thickness distribution to obtain a scatter diagram without a baffle plate;
(2) According to a film thickness distribution formula of a rotary evaporation system, utilizing Mathcad to simulate a relative film thickness curve without shielding of electron beam thermal evaporation equipment; with deposited Ta2O5Obtaining the Ta of the experimental equipment by comparing the scatter diagram without the baffle2O5Actual evaporation source characteristic n is 2.1 (see fig. 3);
(3) the particular shape of the correction baffle has a direct relationship to the masking of the film material. Introducing a correction baffle function into the simulation model between the relative film thickness and the variable, and enabling the substrate to rotate until the film material is shielded, namely, the mask is 0; and (3) the position where the membrane material is not shielded, namely mask 1. The rotation speed omega and Ta of the spherical workpiece frame of the film plating machine2O5The evaporation characteristic n of the deposition characteristic, the distance H between the plane of the evaporation source and the highest point of the spherical workpiece holder, the curvature radius R of the spherical workpiece holder and the distance L between the evaporation source and the center of the rotating shaft of the spherical workpiece holder are led into a Mathcad program, and the simulation equipment is repaired according to the established simulation model relationThe relative film thickness distribution of the positive baffle;
(4) according to the actual parameters, simulating to obtain Ta2O5The relationship between the baffle and the relative film thickness is corrected, and the expression rule is as follows: ta2O5The closer the initial baffle is to the center of the spherical workpiece frame, the larger the relative film thickness difference is, and Ta2O5The larger the width of the initial baffle plate is, the larger the relative film thickness difference is, and Ta 2O5The longer the initial baffle, the smaller the relative film thickness difference. Then further determining an initial correction baffle plate required by the linear gradient filter;
3) monitoring the film thickness by using a quartz crystal oscillation method, and optimizing a correction baffle of the gradual change linear filter by carrying out a single-layer process test:
(1) cutting Ta according to the simulation result2O5Correcting the baffle; placing a cut correction baffle plate in a vacuum coating chamber, placing a sample wafer at intervals of rho value 42mm along the radial direction of a spherical workpiece frame, monitoring the film thickness by using a quartz crystal oscillation method, and coating Ta of 500nm2O5Film, performing single-layer process experiment;
(2) obtaining linearly optimized Ta for the linear gradient filter according to the improved correction baffle and the relative film thickness model2O5The baffle is modified as shown in fig. 2.
In particular, Ta is optimized2O5The modified baffle plate is placed in a coating device, the thickness of the film is monitored by a quartz crystal oscillation method, and 500nm Ta is coated2O5As shown in FIG. 4, the relative film thickness of the thin film obtained at the position corresponding to the rho value was linearly changed from 170mm to 210 mm.
According to the verification of the experimental result, the requirement for preparing the 500 nm-800 nm linear gradient optical filter is met, and at the moment, Ta2O5The position and size of the correction baffle on the spherical workpiece holder are shown in fig. 2.
By adopting the method, the SiO is prepared 2The baffle is corrected, and Ta required by preparation can be obtained by only 3-4 experiments2O5With SiO2Correcting the baffle plate to obtain Ta2O5With SiO2The correction baffle is fixed in the coating equipment to design a linear gradient filter film systemThe linear gradual change optical filter real object prepared by plating in a German Laibao SYRUS.C 1110 type film plating machine realizes gradual change in the spectral range of 500nm to 800 nm.
Claims (2)
1. A design method of a correction baffle of a linear gradient filter is characterized by comprising the following steps:
1) establishing a simulation model between the relative film thickness and the variable, performing programming simulation by using Mathcad15, designing a program to simulate the film thickness distribution of the thermal evaporation equipment, and determining the emission characteristic n of the evaporation source of the electron beam thermal evaporation equipment through experiments;
2) introducing a correction baffle function into a simulation model between the relative film thickness and the variable to realize the film thickness distribution simulation of the rotary spherical evaporation system, introducing parameters such as the fixture rotating speed of a film coating machine, the deposition characteristic evaporation characteristic n and the like into a Mathcad program, and determining an initial correction baffle required by the linear gradient filter through the simulation model;
3) and monitoring the film thickness by using a quartz crystal oscillation method, and performing a single-layer process test to optimize the correction baffle of the gradient linear filter.
2. The method of claim 1, wherein the step of designing the baffle comprises: the variables are the position of the correction baffle, the shape of the correction baffle and the emission characteristic n of the material, the distance H between the plane of the evaporation source and the highest point of the spherical workpiece frame, the curvature radius R of the spherical workpiece frame, the distance L between the evaporation source and the center of the rotating shaft of the spherical workpiece frame, and the three-dimensional coordinates (x, y, z) of any point P on the workpiece frame.
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CN202210282142.6A CN114676520A (en) | 2022-03-22 | 2022-03-22 | Design method of linear gradient filter correction baffle |
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CN202210282142.6A CN114676520A (en) | 2022-03-22 | 2022-03-22 | Design method of linear gradient filter correction baffle |
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