CN114664773A - 具有包覆成型件的功率模块和包括这种功率模块的系统 - Google Patents

具有包覆成型件的功率模块和包括这种功率模块的系统 Download PDF

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Publication number
CN114664773A
CN114664773A CN202111578021.8A CN202111578021A CN114664773A CN 114664773 A CN114664773 A CN 114664773A CN 202111578021 A CN202111578021 A CN 202111578021A CN 114664773 A CN114664773 A CN 114664773A
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Prior art keywords
strip
reference plane
distance
power module
wire
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CN202111578021.8A
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Inventor
V.弗坎布雷
A.杜托特
L.马索尔
M.克里克布
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Valeo Equipements Electriques Moteur SAS
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Valeo Equipements Electriques Moteur SAS
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Publication of CN114664773A publication Critical patent/CN114664773A/zh
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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Abstract

本发明涉及一种功率模块，包括：第一和第二电连接部分，每个电连接部分具有主板；晶体管，晶体管的上表面限定参考平面；以及电绝缘包覆成型件，电绝缘包覆成型件的上表面具有腔；所述腔具有平坦底部，条带或电线形成第一桥，其两端平坦地位于晶体管的上表面上，第一桥的最高点在参考平面上的正交投影包括在腔的平坦底部在参考平面上的正交投影中，并且其中第一桥的最高点相对于参考平面的距离D5和条带或电线的厚度之间的差大于或等于平行于穿过电绝缘包覆成型件的最高点的参考平面的平面和参考平面之间的距离D3与平行于穿过电绝缘包覆成型件的最高点的参考平面的平面和平行于穿过腔的最低点的参考平面的平面之间的距离D2之间的差。

Description

具有包覆成型件的功率模块和包括这种功率模块的系统
技术领域
本发明涉及具有包覆成型件的功率模块、电气系统和包括这种功率模块的电压转换器。
背景技术
功率模块是一种电子模块，通常包含半导体芯片(例如晶体管，称为功率晶体管)，设计用于产生能量转换电路，例如开关单元、逆变器或甚至整流桥的能量转换电路。
现有技术中已知的功率模块包括：
-优选由金属制成的第一和第二电连接部分，每个电连接部分具有主板，主板沿着同一主平面延伸，从而基本共面；
-安装在第一电连接部分的主板的上表面上的晶体管，该晶体管的上表面限定参考平面，所述晶体管通过至少一个条带或通过至少一个电线电连接到第二电连接部分的主板的上表面；以及
-例如由树脂制成的电绝缘包覆成型件，覆盖所述晶体管和第一和第二电连接部分的主板的上表面的至少一部分，电绝缘包覆成型件的上表面具有至少部分位于条带或电线上方的腔。
然而，在晶体管过热的情况下，例如在短路的情况下，热量扩散到电绝缘体中，从而有着火的危险，危及周围的元件。
发明内容
本发明的目的是至少部分克服上述问题。
因此，根据本发明的第一方面，提出了一种功率模块，包括：
-优选由金属制成的第一和第二电连接部分，每个电连接部分具有主板，主板沿着同一主平面延伸，从而基本共面；
-安装在第一电连接部分的主板的上表面上的晶体管，该晶体管的上表面限定参考平面，所述晶体管通过至少一个条带或通过至少一个电线电连接到第二电连接部分的主板的上表面；以及
-例如由树脂制成的电绝缘包覆成型件，覆盖所述晶体管和第一和第二电连接部分的主板的上表面的至少一部分，电绝缘包覆成型件的上表面具有至少部分位于条带或电线上方的腔。
该功率模块的特征在于，所述腔具有平坦底部，条带或电线形成第一桥，其两端平坦地位于晶体管的上表面上，第一桥的最高点在参考平面上的正交投影包括在腔的所述平坦底部在参考平面上的正交投影中，并且其中第一桥的最高点相对于参考平面的距离D5和条带或电线的厚度之间的差大于或等于平行于穿过电绝缘包覆成型件的所述最高点的参考平面的平面和参考平面之间的距离D3与平行于穿过电绝缘包覆成型件的最高点的参考平面的平面和平行于穿过所述腔的最低点的参考平面的平面之间的距离D2之间的差。
腔在几何上至少部分位于条带或电线上方的事实意味着条带或电线在主平面上的正交投影和腔在该同一主平面上的正交投影之间的交点不是空的。
借助于该技术特征，电绝缘包覆成型件的厚度根据条带或电线的布置进行调节，使得该厚度在条带或电线上方更小，甚至为零。
此外，距离D5、D2、D3和条带或电线的厚度之间的关系确保了由条带或电线形成的第一桥的上端位于腔中，使得电绝缘包覆成型件在该上端上施加很少或甚至没有保持力。
以这种方式，施加在条带或电线上且特别是施加在上端上的电绝缘包覆成型件的保持力减小，这使得该条带或电线在加热时更容易断裂。
因此，根据本发明的功率模块中的条带或电线在比根据现有技术的功率模块更低的温度下断裂。由于在更低温度下的这种断裂，晶体管的任何加热都受到限制。
换句话说，在晶体管操作故障的情况下，根据本发明的功率模块的电绝缘包覆成型件的温度保持低于根据现有技术的功率模块，使得根据本发明的功率模块不太可能着火。
根据本发明的功率模块可以进一步包括一个或多个以下可选特征，可以单独考虑或甚至根据任何技术上可能的组合考虑。
根据另一特征，距离D3和距离D2之间的差大于或等于条带或电线的厚度，优选大于或等于条带或电线的厚度的两倍。
距离D2、D3和条带或电线的厚度之间的关系确保晶体管上方有最小的树脂厚度，从而晶体管被树脂适当地保护。
根据另一特征，腔具有平坦底部，功率模块的特征在于，条带或电线的最高点在参考平面上的正交投影包括在平坦底部在参考平面上的正交投影中，并且条带或电线的最高点相对于参考平面的距离D1和条带或电线的厚度之间的差大于或等于距离D3和距离D2之间的差。
根据另一特征，条带或电线形成第二桥，其一端平坦地位于晶体管的上表面上，并且其另一端平坦地位于第二电连接部分的主板的上表面上，第二桥的最高点在参考平面上的正交投影包括在腔的平坦底部在参考平面上的正交投影中，并且第二桥的最高点相对于参考平面的距离D6和条带或电线的厚度之间的差大于或等于距离D3和距离D2之间的差。
根据另一特征，晶体管通过多个条带和/或电线连接到第二电连接部分的主板的上表面，并且腔具有平坦底部，功率模块的特征在于，每个条带和/或电线的最高点在参考平面上的正交投影包括在腔的平坦底部在参考平面上的正交投影中，并且对于每个条带和/或电线，该条带和/或电线的最高点相对于参考平面的距离和该条带或电线的厚度之间的差大于或等于距离D3和距离D2之间的差。
根据另一特征，腔至少部分位于条带或电线的最高部分上方。
根据另一特征，腔至少部分位于第一桥上方。
根据另一特征，腔至少部分位于第二桥上方。
根据另一特征，第一电连接部分旨在连接到直流电压源的正端子。
根据另一特征，第二电连接部分旨在连接到旋转电机的相。
根据另一特征，第一电连接部分包括从其主板突出的至少一个电连接器。
根据另一特征，第一电连接部分的电连接器从第一电连接部分的主板突出到主平面中。
根据另一特征，电连接器和支撑电连接器的第一电连接部分的主板作为连续材料制成一体。
根据另一特征，第二电连接部分包括从其主板突出的至少一个电连接器。
根据另一特征，第二电连接部分的电连接器从第二电连接部分的主板突出到主平面中。
根据另一特征，电连接器和支撑电连接器的第二电连接部分的主板作为连续材料制成一体。
根据另一特征，晶体管电连接到第一电连接部分的主板的上表面。
根据另一特征，电绝缘包覆成型件作为单件是一体的。
根据另一特征，腔填充有凝胶或树脂，其硬度低于电绝缘包覆成型件的硬度。
根据另一特征，晶体管是FET(“场效应晶体管”)型晶体管或IGBT(“绝缘栅双极晶体管”)型晶体管。
根据另一特征，FET型晶体管是由硅(Si-MOSFET)或碳化硅(SiC-MOSFET)制成的MOSFET晶体管，或者是由氮化镓制成的FET晶体管(GaN-FET)。
根据另一特征，晶体管是例如由氮化镓制成的HEMT(“高电子迁移率晶体管”)晶体管。
根据另一特征，晶体管是板的形式，例如其基本是矩形的，具有上表面和下表面。
根据另一特征，晶体管的下表面压靠在晶体管所安装到的第一电连接部分的主板的上表面上。
根据另一特征，晶体管通过其下表面电连接到第一电连接部分的主板的上表面。
根据另一特征，包覆成型件具有向下突出的树脂垫。
根据另一特征，主板沿着主平面彼此分开至少一个间隙，并且包覆成型件填充每个间隙，并且在每个间隙中具有与主板的下表面齐平的下表面。
根据另一特征，树脂垫从间隙中存在的包覆成型件的下表面突出。
根据另一特征，电连接部分通过切割单个金属板获得。
根据另一特征，包覆成型件暴露至少一个电连接部分的主板的下表面的至少一部分，该暴露部分设计成压靠散热器。
根据另一特征，腔在电绝缘包覆成型件的上表面中通过激光烧蚀被至少部分地切割。
应该注意的是，距离D2、D3和D4之间的关系也确保在腔底部和晶体管之间有足够的树脂层，使得晶体管在腔的激光烧蚀过程中不会被损坏。
根据另一特征，腔具有平坦底部。
根据另一特征，腔的平坦底部由位于不同高度的多个台阶构成。
根据另一特征，腔的底部是平坦的，除了位于条带或电线下面的突出部分。
根据另一特征，腔的底部是平坦的，除了位于每个条带和/或每个电线下面的突出部分。
根据另一特征，突出部分从腔的平坦底部升起。
根据本发明的第二方面，还提出了一种电气系统，其包括散热器和根据本发明第一方面的功率模块，并且其中散热器与通过包覆成型件暴露的下表面热接触。
根据本发明的第三方面，还提出了一种电压转换器，其包括根据本发明第一方面的功率模块或者甚至根据本发明第二方面的电气系统。
该电压转换器旨在连接在提供直流电压的电源和旋转电机之间，用于执行电源的直流电压和旋转电机的至少一个相电压之间的转换。
附图说明
从下面的描述中将更好地理解本发明，下面的描述仅通过示例并参考附图来提供，其中：
图1示意性地示出了在本发明的第一实施例中包括实现本发明的电压转换器的电气系统；
图2是在本发明的第一实施例中图1的电压转换器的分解三维视图；
图3是在本发明的第一实施例中图2的电压转换器的功率模块的三维俯视图，没有包覆成型件；
图4是类似于图3的视图，具有包覆成型件；
图5是图3和4的功率模块的三维仰视图，具有包覆成型件；
图6是在本发明的第一实施例中示出功率模块的一些物理尺寸之间存在的关系的示意图；
图7是在本发明的第二实施例中示出功率模块的一些物理尺寸之间存在的关系的示意图；以及
图8是在本发明的第三实施例中示出功率模块的一些物理尺寸之间存在的关系的示意图。
具体实施方式
参考图1，现在将描述在本发明的第一实施例中实现本发明的电气系统100。
例如，电气系统100旨在安装在机动车辆中。
电气系统100首先包括电源102，电源102设计成提供直流电压U，例如范围在10V和100V之间，例如48V或甚至12V。
因此，电源102是直流电压源。该电源包括例如电池。
电气系统100还包括电机130，电机130包括多个相(未示出)，这些相具有各自的相电压。
电气系统100还包括连接在电源102和电机130之间的电压转换器104，以便执行直流电压U和相电压之间的转换。
电压转换器104首先包括正母线106和负母线108，正母线106和负母线108旨在连接到电源102以接收直流电压U，正母线106接收高电势，负母线108接收低电势。
电压转换器104还包括至少一个功率模块110。功率模块110包括一个或多个相母线，其分别用于连接到电机130的一个或多个相，以便提供它们各自的相电压。
在所描述的示例中，电压转换器104包括三个功率模块110，每个功率模块包括连接到电机130的两个相的两个相母线1221、1222。
更具体地，在所描述的示例中，电机130包括两个三相系统，每个三相系统包括三个相，并且旨在彼此电相移120°。优选地，功率模块110的第一相母线1221分别连接到第一三相系统的三个相，而功率模块110的第二相母线1222分别连接到第二三相系统的三个相。
对于每个相母线1221，每个功率模块110包括连接在正母线106和相母线1221之间的第一电气部件(在这种情况下是高侧开关1121)，以及连接在相母线1221和负母线108之间的第二电气部件(在这种情况下是低侧开关1141)。因此，开关1121、1141布置成形成开关臂，其中相母线1221形成中心抽头。
对于每个相母线1222，每个功率模块110还包括连接在正母线106和相母线1222之间的第三电气部件(在这种情况下是高侧开关1122)，以及连接在相母线1222和负母线108之间的第四电气部件(在这种情况下是低侧开关1142)。因此，开关1122、1142布置成形成开关臂，其中相母线1222形成中心抽头。
每个开关1121、1141、1122、1142包括第一和第二主端子116、118以及控制端子120，该控制端子120用于根据施加到其上的控制信号选择性地打开和关闭其两个主端子116、118之间的开关1121、1141、1122、1142。开关1121、1141、1122、1142优选为晶体管，例如金属氧化物半导体场效应晶体管(MOSFET)，其栅极形成控制端子120，漏极和源极分别形成主端子116、118。可替代地，开关1121、1141、1122、1142可以是“绝缘栅双极晶体管”(或IGBT)晶体管。
在所描述的示例中，开关1121、1141、1122、1142每个都呈现板的形式，例如其基本是矩形的，具有上表面和下表面。第一主端子116在下表面上延伸，而第二主端子118在上表面上延伸。开关1121、1141、1122、1142用于在它们的主端子116、118之间被大于1A的电流穿过。
应当理解，正母线106、负母线108和相母线1221、1222是刚性电导体，其设计成承受至少1A的电流，该电流旨在穿过开关1121、1141、1122、1142。它们优选至少1mm厚。
此外，在所描述的示例中，正母线106首先包括连接功率模块110的正公共母线106A，并且在每个功率模块110中，包括连接到正公共母线106A的正局部母线106B。类似地，负母线108包括连接功率模块110的负公共母线108A，并且在每个功率模块110中，包括用于每个低侧开关1141、1142的负局部母线108B1、108B2，其中负局部母线108B1、108B2连接到负公共母线108A。连接在图中显示为菱形。
此外，在所描述的示例中，正公共母线106A和负公共母线108A均由单个导电部分形成。
此外，在所描述的示例中，电机130是具有交流发电机和电动机功能的旋转电机。更具体地，机动车辆还包括具有输出轴的内燃机(未示出)，电机130通过皮带(未示出)连接到输出轴。内燃机旨在通过其输出轴驱动机动车辆的车轮。因此，在作为交流发电机运行期间，电机130从输出轴的旋转向电源102供应电能。电压转换器104然后作为整流器工作。在作为电动机运行期间，电机驱动输出轴(除了内燃机之外或者代替内燃机)。电压转换器104然后作为逆变器工作。
电机130位于例如齿轮箱中或者机动车辆的离合器中，或者替代交流发电机。
在说明书的剩余部分，将参考竖直方向H-B进一步详细描述电压转换器104的元件的结构和布局，其中“H”代表顶部，“B”代表底部。该竖直方向H-B在图中用参考符号V表示。
参考图2，电压转换器104包括具有热交换表面204的散热器206，功率模块110(图2中示出了单个功率模块110)分别安装在该散热器206上。散热器206的热交换表面204和功率模块110之间的热交换例如通过散热器206的热交换表面204和功率模块110之间的直接接触或者通过导热膏来发生。
电压转换器104还包括支撑壳体208，诸如控制模块210的次级电子模块固定在支撑壳体208上。在图1的示例中，控制模块210是控制板。此外，可选地，支撑壳体208安装在散热器206上。
参考图3，现在将描述功率模块110。
该功率模块110包括优选由金属制成的多个电连接部分304、3041、3042、3043。
每个电连接部分304、3041、3042、3043具有沿着水平主平面PP延伸的主板306、3061、3062、3063，水平主平面对于所有主板306、3061、3062、3063是相同的，使得主板306、3061、3062、3063基本共面。具体而言，在所描述的示例中，主板306、3061、3062、3063具有在同一高度延伸的相应水平上表面308、3081、3082、3083。为了清楚起见，上表面308、3081、3082、3083仅在最大主板306、3061、3062、3063的图中示出。
特别地，功率模块110包括具有包括上表面3081的主板3061的第一电连接部分3041、具有包括上表面3082的主板3062的第二电连接部分3042以及具有包括上表面3083的主板3063的第三电连接部分3043。
此外，主板306、3061、3062、3063沿着主平面PP彼此分开至少一个间隙310。在所描述的示例中，每个间隙310的宽度小于或等于5毫米。这意味着限定间隙310的两个主板沿着该间隙310分开最多5毫米。
一般来说，至少一个电连接部分304(都在所描述的示例中)还具有从其主板306、3061、3062、3063突出的至少一个电连接器。每个电连接器例如或是销3121的形式，或是折叠凸片3122、3123的形式，或者甚至是直凸片3124的形式。
在这里描述的示例中，直凸片3124与其主板3062、306一起形成相母线1221、1222，折叠凸片3123与其主板3061一起形成正局部母线106B，折叠凸片3122与其主板3063、306一起形成负局部母线108B1、108B2。
每个电连接器3121、3122、3123具有固定到主板306、3062、3063、3061的固定端314，在所述示例中，主体部分316竖直延伸并终止于自由端318和将固定端314连接到主体部分316的弯头320。为了清楚起见，电连接器3121、3122、3123的这些不同元件仅在图中针对两个电连接器3121、3122示出，一个为销的形式，另一个为凸片的形式。
在直凸片的情况下，电连接器3124突出到主平面PP中相当长的长度，例如至少一厘米，以便允许其被连接。此外，电连接器3124具有固定到主板306的固定端314，该固定端314非常宽，例如至少一厘米，以允许电流通过。
在所描述的示例中，通过从金属板切割获得电连接部分304。
在这里描述的示例中，金属板由铜制成。作为替代实施例，金属板可以由铝或甚至金制成。
此外，如前所述，功率模块110包括晶体管1121、1122、1141、1142，每个晶体管分别电连接在其中两个主板306、3061、3062、3063的两个上表面308、3081、3082、3083之间，例如以便允许通过并根据需要中断功率电流，该功率电流可以例如大于这两个主板306、3061、3062、3063之间的一安培。每个晶体管1121、1122、1141、1142首先具有压靠该晶体管电连接到的两个上表面308、3081、3082之一的下表面。每个晶体管1121、1122、1141、1142也具有上表面，其一部分电连接到两个上表面中的另一个。在所描述的示例中，晶体管1121、1122、1141、1142的上表面还包括用于控制晶体管1121、1122、1141、1142的部分，该部分例如通过所描述的示例中的电线328电连接到第三主板306的上表面。
换句话说，晶体管1121安装在并且电连接到第一电连接部分3041的主板3061的上表面3081，并且第一电连接元件将晶体管1121电连接到第二电连接部分3042的主板3062的上表面3082。
第一电连接元件包括两个条带3261，每个金属条带3261的一端使用焊接方法焊接到第二电连接部分3042的主板3062的上表面3082上。使用焊接方法将每个金属条带3261的第二端直接焊接到晶体管1121上。使用的焊接方法是例如超声波或摩擦焊接方法。
在这里描述的示例中，两个条带3261基本是相同的形状。
类似地，晶体管1141安装在并电连接到第二电连接部分3042的主板3062的上表面3082，并且第二电连接元件将晶体管1141电连接到第三电连接部分3043的主板3063的上表面3083。
第二电连接元件包括两个条带3262，每个金属条带3262的一端使用焊接方法焊接到第三电连接部分3043的主板3063的上表面3083上。使用焊接方法将每个金属条带3262的第二端直接焊接到晶体管1141上。使用的焊接方法是例如超声波或摩擦焊接方法。
类似地，晶体管1122和1142安装在并电连接到电连接部分304、3041的主板306、3061的上表面308、3081，并且它们的上表面通过两个相同形状的条带326电连接到另一主板306的上表面之一。
在所描述的示例中，条带326、3261、3262由铝制成，并且具有例如2mm×0.3mm的横截面。在替代实施例中，条带326、3261、3262由金制成。
在所描述的示例中，电线328由铝制成，并且具有0.2mm的直径。在替代实施例中，电线328由金制成。
在所描述的示例中，销形式的电连接器3121用于将功率模块110连接到控制模块210，以便测量电数值并控制晶体管1121、1122、1141、1142。
此外，仍在所描述的示例中，电连接器3122连接到负公共母线108A，并且电连接器3123连接到正公共母线106A。
此外，仍在所描述的示例中，直凸片形式的两个电连接器3124分别形成功率模块110的两个相母线1221、1222。
参考图4，示出了功率模块110的包覆成型件，并且其由附图标记402表示。
包覆成型件402是电绝缘体，并且完全覆盖每个晶体管1121、1122、1141、1142以及主板3061、3062、3063、306的上表面3081、3082、3083、308的至少一部分。
在这里描述的示例中，包覆成型件402也完全覆盖每个电线328。
此外，电绝缘包覆成型件402的上表面具有至少部分位于第一电连接元件的最高部分上方的第一腔C1。
该第一腔C1例如在电绝缘包覆成型件402的上表面中通过激光烧蚀至少部分地被切割。根据设计，第一腔C1的底部是平坦的，例如由位于不同高度的多个台阶构成，除了从第一腔的平坦底部升起的突出部分，突出部分位于两个条带3261中的每个之下。
条带3261的一部分因此位于第一腔C1中，并且电绝缘包覆成型件402覆盖条带3261的其余部分。换句话说，电绝缘包覆成型件402部分地覆盖条带3261，使得只有条带3261在顶部-底部方向上的最高部分没有被电绝缘包覆成型件402覆盖，并且也位于第一腔C1中。
以这种方式，电绝缘包覆成型件在条带3261的最高部分上施加很小的保持力或不施加保持力，这允许这些条带在加热时容易断裂。
类似地，电绝缘包覆成型件402的上表面具有至少部分位于第二电连接元件3262的最高部分上方的第二腔C2。
条带3262的一部分因此位于第二腔C2中，并且电绝缘包覆成型件402覆盖条带3262的其余部分。换句话说，电绝缘包覆成型件402部分地覆盖条带3262，使得只有条带3262在顶部-底部方向上的最高部分没有被电绝缘包覆成型件402覆盖，并且也位于第二腔C2中。
出于与之前相同的原因，电绝缘包覆成型件402在条带3262的最高部分上施加很小的保持力或者不施加保持力，这允许这些条带在这些条带加热时容易断裂。
最后，电绝缘包覆成型件402的上表面还具有第三腔C3和第四腔C4，它们分别至少部分地位于晶体管1122和晶体管1142的条带326上方，并且足够深，使得只有晶体管1122的条带326的上部和晶体管1142的条带326的上部分别位于第三腔C3和第四腔C4中，从而电绝缘包覆成型件402覆盖条带322的其余部分。
包覆成型件402例如由树脂制成，甚至例如由环氧树脂制成。优选地，包覆成型件402作为单件是一体的。
在这里描述的实施例中，腔没有材料。作为替代实施例，腔填充有凝胶，例如电介质和/或硅凝胶。凝胶还可以具有230-600mPa-s，优选400-500mPa-s，例如465mPa-s的粘度，和/或可以具有65-180g，优选110-160g，例如123g或154g的硬度。
在另一替代实施例中，腔填充的树脂不同于形成电绝缘包覆成型件402的树脂。特别地，填充腔的树脂的硬度小于形成电绝缘包覆成型件402的树脂的硬度。例如，电绝缘包覆成型件402由例如硬度在70和90邵氏硬度之间的环氧树脂形成，并且腔填充有例如硬度在20和40邵氏硬度之间的弹性体树脂。填充腔的树脂也属于UL 94 V-0防火等级，如由Underwriters Laboratories认证公司定义。
图5是功率模块110的仰视图。
从该图中可以看出，包覆成型件402暴露了第一电连接部分3041的主板3061的下表面5021。该暴露部分设计成压靠散热器206。因此，散热器206与通过包覆成型件402暴露的下表面5021热接触。这种热接触可以是直接接触，或者甚至可以通过绝缘且导热的电连接元件接触。
类似地，包覆成型件402暴露出每个其他电连接部分304、3042、3043的主板306、3062、3063的下表面502、5022、5023。这些暴露的部分设计成压靠散热器206。因此，散热器206与通过包覆成型件402暴露的下表面502、5022、5023热接触。这种热接触可以是直接接触，或者甚至可以通过绝缘且导热的电连接元件接触。
此外，包覆成型件402填充每个间隙310，并且在每个间隙310中具有与主板206的下表面502齐平的下表面。
包覆成型件402具有至少一个树脂垫506，其向下突出并设计成与散热器206直接接触，以便在主板306、3061、3062、3063的下表面502、5021、5022、5023和散热器206之间限定预定空间，从而限定填充该空间的导热元件的厚度。在所描述的示例中，每个树脂垫506从存在于主板306、3061、3062、3063之间的间隙310之一中的包覆成型件的下表面突出。
图6示出了功率模块110沿着垂直于主平面PP并穿过第一电连接元件的其中一个条带的主轴线的切割平面的局部视图。
首先，应该注意的是，第一晶体管1121的上表面限定了参考平面p。
两个相同的条带3261各自形成第一桥PO1和第二桥PO2。
第一桥PO1的两端平坦地位于第一晶体管1121的上表面上。第一桥PO1的最高点在参考平面P上的正交投影包括在第一腔C1的平坦底部在参考平面P上的正交投影中。
第二桥PO2的一端平坦地位于第一晶体管1121的上表面上，第二桥PO2的另一端平坦地位于第二电连接部分3042的主板3062的上表面上。第二桥PO2的最高点在参考平面P上的正交投影包括在第一腔C1的平坦底部在参考平面P上的正交投影中。
在这里描述的示例中，两个条带3261的两个桥PO1和PO2具有相同的高度。由此可见，每个条带3261的最高点在参考平面上的正交投影包括在腔的平坦底部在参考平面(P)上的正交投影中。
现在将示出条带3261、包覆成型件402和第一腔C1的物理尺寸之间存在的关系。
在下面的描述中，高度是相对于前面描述的顶部-底部尺寸来定义的。
距离D2是平行于穿过电绝缘包覆成型件402的最高点的参考平面的平面和平行于穿过第一腔C1的最低点的参考平面P的平面之间的距离。
距离D3是平行于穿过电绝缘包覆成型件402的最高点的参考平面P的平面和参考平面P之间的距离。
距离D4对应于两个条带3261中的每个的相同厚度。
这些距离D2、D3和D4配置成使得距离D3和D2之间的差大于或等于距离D4的两倍。换句话说，距离D3、D2和D4验证了方程：
[数学关系1]
D3-D2≥2D4
借助于该数学关系，确保了第一晶体管1121上方的最小树脂厚度的存在，使得第一晶体管被树脂适当地保护。
此外，该最小树脂厚度还确保了当执行第一腔C1的激光烧蚀时，第一晶体管1121不会有被损坏的风险。
此外，如果距离D5被定义为第一桥PO1的最高点相对于参考平面P的距离，则距离D5、D2、D3、D4也配置为使得距离D5和距离D4之间的差大于或等于距离D3和距离D2之间的差。
换句话说，距离D2、D3、D4和D5验证了方程：
[数学关系2]
D5-D4≥D3-D2
类似地，如果距离D6被定义为第一桥PO2的最高点相对于参考平面P的距离，则距离D6、D2、D3、D4也配置为使得距离D6和距离D4之间的差大于或等于距离D3和距离D2之间的差。
换句话说，距离D2、D3、D4和D6验证了方程：
[数学关系3]
D6-D4≥D3-D2
借助于这些数学关系，两个桥PO1和PO2的上端位于第一腔C1中，使得包覆成型件402在这些上端上施加很少压力或不施加压力。
在所描述的示例中，两个桥PO1和PO2具有相同的高度，因此距离D5和D6相等。距离D5和D6也等于两个相同形状的条带3261中的每个的最高点相对于参考平面P的距离D1。
换句话说，距离D1、D3、D2和D4验证了方程：
[数学关系4]
D1-D4≥D3-D2
显然，在条带3262、包覆成型件402和第二腔C2的物理尺寸之间，以及在条带326、包覆成型件402和腔C3和腔C4的物理尺寸之间存在相同的关系。
参考图7，现在将描述本发明的第二实施例。与第一实施例的元件相同或相似的元件在第二实施例的描述中使用相同的附图标记。
该第二实施例与第一实施例的不同之处在于条带3261的形状和第一腔C1的尺寸。
更具体地，对于两个条带3261，第二桥PO2具有比第一桥PO1更高的高度，并且产生第一腔C1，使得第一桥PO1完全被树脂覆盖。
对于第一实施例，距离D2、D3和D4配置成使得距离D3和D2之间的差大于或等于距离D4的两倍。换句话说，距离D3、D2和D4验证了方程数学关系1。
此外，距离D2、D3、D4和D6验证了方程数学关系3。
显然，在该第二实施例中，条带3262、包覆成型件402和第二腔C2的物理尺寸之间，以及条带326、包覆成型件402和腔C3和C4的物理尺寸之间存在相同的关系。
参考图8，现在将描述本发明的第三实施例。与第一或第二实施例的元件相同或相似的元件在第三实施例的描述中使用相同的附图标记。
该第三实施例与第一实施例的不同之处在于两个条带不相同。
因此，两个条带326'1之一的第二桥PO'2的高度高于另一条带3261的第二桥PO2的高度。
如图所示，每个条带3261、326'1的最高点在参考平面P上的正交投影包括在第一腔C1的平坦底部在参考平面P上的正交投影中，并且对于每个条带3261、326'1，该条带的最高点D6、D6’相对于参考平面P的距离和该条带的厚度D4之间的差大于或等于距离D3和距离D2之间的差。
还应注意，本发明不限于前述实施例。实际上，对于本领域技术人员来说，根据刚刚向他们公开的教导，可以对上述实施例进行各种修改是显而易见的。
例如，所有条带或一些条带326、3261、3262可以由电线和/或保险丝代替。
作为另一示例，晶体管1121、1141、1122、1142可以是由氮化镓制成的FET或HEMT晶体管。
此外，在前面描述的实施例中，每个电连接元件都具有条带。作为替代实施例，这些电连接元件可以只有一个条带。在另一替代实施例中，这些电连接元件可以具有至少三个条带。
在上面提供的本发明的详细描述中，所使用的术语不能理解为将本发明限制于本说明书中公开的实施例，而是必须理解为包括所有等同物，通过将他们的一般知识应用于刚刚向他们公开的教导的实施，对等同物的预期在本领域技术人员的范围内。

Claims (9)

1.一种功率模块(110)，包括：
-优选由金属制成的第一电连接部分(3041)和第二电连接部分(3042)，每个电连接部分具有主板(3061,3062)，所述主板(3061,3062)沿着相同的主平面(PP)延伸，从而基本共面；
-安装在所述第一电连接部分(3041)的主板(3061)的上表面上的晶体管(1121)，所述晶体管(1121)的上表面限定参考平面(P)，所述晶体管(1121)通过至少一个条带(3261)或通过至少一个电线电连接到所述第二电连接部分(3042)的主板(3062)的上表面；以及
-例如由树脂制成的电绝缘包覆成型件(402)，覆盖所述晶体管(1121)和所述第一电连接部分(3041)和第二电连接部分(3042)的主板(3061,3062)的上表面的至少一部分，所述电绝缘包覆成型件(402)的上表面具有至少部分位于所述条带(3261)或电线上方的腔(C1)；
所述功率模块(110)的特征在于，所述腔(C1)具有平坦底部，所述条带(3261)或电线形成第一桥(PO1)，其两端平坦地位于所述晶体管(1121)的上表面上，所述第一桥(PO1)的最高点在所述参考平面(P)上的正交投影包括在所述腔(C1)的所述平坦底部在所述参考平面(P)上的正交投影中，并且其中所述第一桥(PO1)的最高点相对于所述参考平面(P)的距离D5与所述条带(3261)或电线的厚度(D4)之间的差大于或等于平行于穿过所述电绝缘包覆成型件(402)的最高点的参考平面的平面和所述参考平面(P)之间的距离D3与平行于穿过所述电绝缘包覆成型件(402)的最高点的参考平面的平面和平行于穿过所述腔(C1)的最低点的参考平面的平面之间的距离D2之间的差。
2.根据权利要求1所述的功率模块(110)，其中，所述距离D3和所述距离D2之间的差大于或等于所述条带或电线的厚度(D4)，优选大于或等于所述条带或电线的厚度的两倍。
3.根据前述权利要求中任一项所述的功率模块(110)，其中，所述腔(C1)具有平坦底部，所述功率模块(110)的特征在于，所述条带(3261)或电线的最高点在所述参考平面(P)上的正交投影包括在所述平坦底部在所述参考平面(P)上的正交投影中，并且所述条带(3261)或电线的最高点相对于所述参考平面(P)的距离D1与所述条带或电线的厚度(D4)之间的差大于或等于所述距离D3和所述距离D2之间的差。
4.根据前述权利要求中任一项所述的功率模块(110)，其中，所述条带(3261)或电线形成第二桥(PO2)，其一端平坦地位于所述晶体管(1121)的上表面上，并且其另一端平坦地位于所述第二电连接部分(3042)的主板(3062)的上表面上，其中所述第二桥(PO2)的最高点在所述参考平面(P)上的正交投影包括在所述腔(C1)的所述平坦底部在所述参考平面(P)上的正交投影中，并且其中所述第二桥(PO2)的最高点相对于所述参考平面(P)的距离D6与所述条带或电线的厚度(D4)之间的差大于或等于所述距离D3和所述距离D2之间的差。
5.根据前述权利要求中任一项所述的功率模块(110)，其中，所述晶体管(1121)通过多个条带(3261)和/或电线连接到所述第二电连接部分(3042)的主板(3062)的上表面，并且其中，所述腔(C1)具有平坦底部，所述功率模块(110)的特征在于，每个条带(3261)和/或电线的最高点在所述参考平面(P)上的正交投影包括在所述腔(C1)的平坦底部在所述参考平面(P)上的正交投影中，并且对于每个条带(3261)和/或电线，该条带和/或电线的最高点相对于所述参考平面(P)的距离(D61，D62)与该条带(3261)或电线的厚度(D4)之间的差大于或等于所述距离D3和所述距离D2之间的差。
6.根据前述权利要求中任一项所述的功率模块(110)，其中，所述腔(C1)已经在所述电绝缘包覆成型件(402)的上表面中通过激光烧蚀被至少部分地切割。
7.根据前述权利要求中任一项所述的功率模块(110)，其中，所述包覆成型件(402)暴露至少一个电连接部分(3041,3042)的主板(3061,3062)的下表面(5021,5022)的至少一部分，该暴露部分设计成压靠散热器(206)。
8.一种电气系统(100)，包括散热器(206)和根据前一权利要求所述的功率模块，并且其中所述散热器(206)与由包覆成型件(402)暴露的下表面热接触。
9.一种电压转换器(104)，包括根据权利要求1至7中任一项所述的功率模块(110)或者甚至根据权利要求8所述的电气系统(100)。
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