CN114664631A - Atomic layer etching equipment and etching method - Google Patents

Atomic layer etching equipment and etching method Download PDF

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Publication number
CN114664631A
CN114664631A CN202210423577.8A CN202210423577A CN114664631A CN 114664631 A CN114664631 A CN 114664631A CN 202210423577 A CN202210423577 A CN 202210423577A CN 114664631 A CN114664631 A CN 114664631A
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substrate
reaction chamber
buffer chamber
atomic layer
chamber
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张洪国
刘磊
唐继远
张海飞
李正磊
房岩
王浩增
徐道涵
卓永生
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Jiangsu Pengju Semiconductor Equipment Technology Co ltd
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Jiangsu Pengju Semiconductor Equipment Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention belongs to the field of atomic layer etching, and provides atomic layer etching equipment and an etching method, wherein the atomic layer etching equipment comprises: the device comprises a first reaction chamber for fluorination of a substrate, a second reaction chamber for ligand exchange reaction of the substrate, a buffer chamber arranged between the first reaction chamber and the second reaction chamber and used for purging the substrate, and a transmission mechanism arranged in the buffer chamber and used for driving the substrate to circularly reciprocate in the first reaction chamber, the buffer chamber and the second reaction chamber. The first reaction chamber and the second reaction chamber are arranged and used for respectively realizing two half reactions of the substrate, and the substrate is made to reciprocate between the cavities through the transmission mechanism, so that the number of etched layers can be accurately controlled.

Description

Atomic layer etching equipment and etching method
Technical Field
The invention relates to the technical field of atomic layer etching, in particular to atomic layer etching equipment and an atomic layer etching method.
Background
As IC integration continues to increase, feature sizes continue to shrink. The application of complex structures such as a 3D transistor and a fin field effect transistor further improves the requirements on the depth-to-width ratio of an etched groove, the shape control of the etched groove and the like, and particularly, with the development of the technology less than 10nm, the performance of a device can be influenced by the deviation of atomic scale. Traditional etching is obviously difficult to meet the requirements in some key steps, and the control capability of atomic precision becomes a key for influencing further reduction of the characteristic scale. In this background, the advancement of Atomic Layer Etching (ALE) technology gradually advances the ALE with Atomic precision control capability into the industrial application stage. ALE is self-limiting in that it achieves resolution of a single or multiple atomic layers because the etch stops automatically after the top layer atoms are etched away during an operating cycle. Because the traditional ALE carries out all reactions and purging actions in one reaction cavity, the cavity is polluted, and the film etching efficiency is low.
Disclosure of Invention
The invention aims to solve the defects in the background technology and provides atomic layer etching equipment and an atomic layer etching method.
The technical scheme provided by the invention is as follows: an atomic layer etching apparatus, comprising: the device comprises a first reaction chamber for fluorination of a substrate, a second reaction chamber for ligand exchange reaction of the substrate, a buffer chamber arranged between the first reaction chamber and the second reaction chamber and used for purging the substrate, and a transmission mechanism arranged in the buffer chamber and used for driving the substrate to circularly reciprocate in the first reaction chamber, the buffer chamber and the second reaction chamber.
Furthermore, one side, far away from the buffer cavity, in the first reaction cavity is connected with a first pipeline, and a single-row or double-row first air outlet hole is formed in one side surface, facing the buffer cavity, of the first pipeline.
Furthermore, a first transmission port used for movement of the transmission mechanism is formed in the joint of the first reaction chamber and the buffer chamber, a first air knife is connected above the first transmission port in the buffer chamber, and air outlets of the first air knife are provided with a plurality of rows of second air outlets.
Furthermore, a first valve for closing the first transmission port is connected to the first transmission port.
Furthermore, one side, far away from the buffer cavity, in the second reaction cavity is connected with a second pipeline, and a single row or multiple rows of third air outlets are formed in one side surface, facing the buffer cavity, of the second pipeline.
Furthermore, a second transmission port used for movement of the transmission mechanism is formed in the joint of the second reaction chamber and the buffer chamber, a second air knife is connected above the second transmission port in the buffer chamber, and air outlets of the second air knife are provided with a plurality of rows of fourth air outlets.
Furthermore, a second valve for closing the second transmission port is connected to the second transmission port.
Furthermore, the top of the buffer chamber is connected with a purging mechanism, and a plurality of rows of fifth air outlet holes are formed in the air outlet of the purging mechanism and communicated with the buffer chamber.
Furthermore, the bottoms of the first reaction chamber, the second reaction chamber and the buffer chamber are respectively and correspondingly communicated with a first vacuum pump, a second vacuum pump and a third vacuum pump.
An atomic layer etching method is suitable for any atomic layer etching equipment, and comprises the following steps:
s101, adsorbing the surface of a substrate, and forming a chemical adsorption layer on the etched surface of the substrate through a precursor;
s102, discharging excessive reactants;
s103, purging the substrate, wherein gas residues on the surface of the substrate are purged completely through inert gas;
s104, removing the surface of the substrate, and converting the chemical adsorption layer into a volatile etching object through the precursor;
s105, discharging the volatile etching substances;
s106, purging the substrate, wherein gas residues on the surface of the substrate are purged completely through inert gas;
s107, the steps are repeated until the substrate meets the requirement of the etching layer number.
Compared with the prior art, the invention has the beneficial effects that:
(1) according to the atomic layer etching equipment, the first reaction chamber and the second reaction chamber are arranged and used for respectively realizing two half reactions of the substrate, the substrate is made to reciprocate between the cavities through the transmission mechanism and continuously react, the number of etched layers can be accurately controlled, and cross contamination can be avoided as only one precursor is introduced into the separated reaction chambers.
(2) According to the atomic layer etching equipment, the first reaction cavity, the second reaction cavity and the buffer cavity are arranged separately, so that special anti-corrosion design can be performed on different precursors.
(3) According to the atomic layer etching equipment, the buffer chamber is arranged, so that the substrate can be quickly swept when passing through the buffer chamber, and the substrate does not need to be particularly swept in the first reaction chamber and the second reaction chamber, so that the sweeping efficiency can be improved, and the etching speed can be accelerated.
(4) According to the atomic layer etching equipment, the first air outlet and the third air outlet are arranged in a single-side or circular arrangement mode, and gas is carried by carrier gas and sprayed to the cavity, so that the uniformity of a gas field is ensured, and the gas transmission rate is increased.
(5) According to the atomic layer etching equipment, the first air knife and the second air knife are arranged to isolate the first reaction cavity from the buffer cavity and isolate the second reaction cavity from the buffer cavity, so that smooth proceeding of each half reaction is ensured.
Drawings
FIG. 1 is a block diagram of an atomic layer etching apparatus of the present invention;
FIG. 2 is a structural view of a first outlet port in the present invention;
FIG. 3 is a structural view of a second outlet port in the present invention;
FIG. 4 is a structural view of a third outlet port in the present invention;
FIG. 5 is a structural view of a fourth outlet port in the present invention;
FIG. 6 is a view showing the structure of a fifth outlet hole in the present invention;
FIG. 7 is a flow chart of an atomic layer etching method of the present invention.
The reference numbers are as follows: 1. the device comprises a first reaction chamber, a second reaction chamber, a buffer chamber, a first transmission chamber, a second transmission chamber, a transmission mechanism, a first pipeline, a first air outlet, a first transmission port, a first air knife, a second air outlet, a first valve, a second pipeline, a second valve, a second air knife, a second air outlet, a second valve, a third air outlet, a fourth air outlet, a second valve, a fourth air outlet, a third air outlet, a fourth air outlet, a third air outlet, a fourth air outlet, a third air outlet, a fourth air outlet, a third air outlet, a fourth air outlet, a third air outlet, a fourth air outlet, a third air outlet, a fourth air outlet, a third air outlet, a fourth air outlet.
Detailed Description
The present invention will be described in further detail with reference to the following drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1 to 7, the present invention is an atomic layer etching apparatus and an etching method, the atomic layer etching apparatus including: the device comprises a first reaction chamber 1 for fluoridizing a substrate, a second reaction chamber 2 for ligand exchange reaction of the substrate, a buffer chamber 3 arranged between the first reaction chamber 1 and the second reaction chamber 2 and used for purging the substrate, and a transmission mechanism 4 arranged in the buffer chamber 3 and driving the substrate to circularly reciprocate in the first reaction chamber 1, the buffer chamber 3 and the second reaction chamber 2.
The first reaction chamber 1, the buffer chamber 3 and the second reaction chamber 2 of this embodiment are connected two by two.
The first reaction chamber 1 of this embodiment is supplied with a precursor for the fluorination reaction of the substrate.
The second reaction chamber 2 of this embodiment is supplied with a precursor for the ligand exchange reaction of the substrate.
The precursor of the embodiment is carried by the carrier gas and is respectively sprayed into the first reaction chamber 1 and the second reaction chamber 2, so that the uniformity of the gas field is ensured, and the transmission rate of the precursor is accelerated.
The precursor in this embodiment is a reactive gas.
The buffer chamber 3 of this embodiment is filled with inert gas, which can be used for purging after the substrate reaction, and purging the gas residue on the substrate surface.
The inert gas in this embodiment is a monoatomic gas commonly used in the art, such as nitrogen or argon, which is a gas that is not easily chemically reacted.
The cross section of the inner cavity of the first reaction chamber 1, the buffer chamber 3 and the second reaction chamber 2 of the present embodiment may be circular, rectangular, etc. in a common shape structure.
The first reaction chamber 1, the buffer chamber 3 and the second reaction chamber 2 of the present embodiment may be configured with plasma generators according to process requirements.
The conveying mechanism 4 of the present embodiment may be a mechanism for conveying articles, which is commonly used by a robot arm, a conveyor belt, and the like.
Specifically, a precursor is sprayed in the first reaction chamber 1, a substrate is placed in the first reaction chamber 1, when the substrate completes a fluorination reaction in the first reaction chamber 1, the conveying mechanism 4 drives the substrate into the buffer chamber 3, meanwhile, the inert gas sprayed in the buffer chamber 3 sweeps the surface of the substrate until the conveying mechanism 4 drives the substrate into the second reaction chamber 2, and the substrate and the precursor in the second reaction chamber 2 undergo a ligand exchange reaction after entering the second reaction chamber 2; after the substrate completes the ligand exchange reaction in the second reaction chamber 2, the transmission mechanism 4 drives the substrate to enter the buffer chamber 3, and meanwhile, the inert gas sprayed in the buffer chamber 3 sweeps the surface of the substrate until the transmission mechanism 4 drives the substrate to enter the first reaction chamber 1; the above process is repeated, and the reaction is continuously carried out, so that the number of etched layers is accurately controlled.
Preferably, in the embodiment, the first reaction chamber 1 and the second reaction chamber 2 are arranged for respectively realizing two half reactions of the substrate, and the substrate is made to reciprocate among the first reaction chamber 1, the second reaction chamber 2 and the buffer chamber 3 through the transmission mechanism 4, so that the number of etched layers can be accurately controlled, and cross contamination can be avoided because only one precursor is introduced into the separated reaction chambers.
Furthermore, one side of the first reaction chamber 1, which is far away from the buffer chamber 3, is connected with a first pipeline 5, and one side of the first pipeline 5, which faces the buffer chamber 3, is provided with a single row or double rows of first air outlet holes 6.
The first pipe 5 of this embodiment is designed according to the shape of the inner cavity of the first reaction chamber 1, and fits with a sidewall of the first reaction chamber 1 far from the buffer chamber 3.
The first pipe 5 of the present embodiment may have a pipe cross section of a conventional shape such as a circle, a rectangle, or the like.
The first pipe 5 of the present embodiment is connected to a source delivery system.
Referring to fig. 2, the first outlet holes 6 of this embodiment are of a double row design, with the first outlet holes 6 of this embodiment being above the left side of the substrate location.
Further, a first transmission port 7 used for the transmission mechanism 4 to move is arranged at the joint of the first reaction chamber 1 and the buffer chamber 3, a first air knife 8 is connected above the first transmission port 7 in the buffer chamber 3, and air outlets of the first air knife 8 are provided with a plurality of rows of second air outlets 81.
The first air knife 8 of this embodiment is used to isolate the first reaction chamber 1 from the buffer chamber 3, so as to ensure the smooth proceeding of the substrate fluorination reaction.
Referring to fig. 3, the air outlet of the first air knife 8 of this embodiment is provided with two rows of second air outlet holes 81, and the remaining portion of the air outlet may be selectively provided with the second air outlet holes 81 according to the air outlet requirement.
Further, a first valve 9 for closing the first transfer port 7 is connected to the first transfer port 7.
The first valve 9 of this embodiment is in a normally open state, and is closed after the atomic layer etching apparatus of this embodiment completes work, so as to prevent gas mixture cross contamination in the first reaction chamber 1 and the buffer chamber 3.
Furthermore, one side of the second reaction chamber 2, which is far away from the buffer chamber 3, is connected with a second pipeline 10, and one side of the second pipeline 10, which faces the buffer chamber 3, is provided with one or more rows of third air outlets 11.
The second pipe 10 of this embodiment is designed according to the shape of the inner cavity of the second reaction chamber 2, and fits with a sidewall of the second reaction chamber 2 far from the buffer chamber 3.
The pipe section of the second pipe 10 of the present embodiment may be a conventional shape such as a circle, a rectangle, etc.
The second pipe 10 of the present embodiment is connected to a source delivery system.
Referring to FIG. 4, the third outlet holes 11 of this embodiment are of a double row design, with the third outlet holes 11 of this embodiment being above and to the right of the substrate location.
Further, a second transmission port 12 for movement of the transmission mechanism 4 is formed at the joint of the second reaction chamber 2 and the buffer chamber 3, a second air knife 13 is connected above the second transmission port 12 in the buffer chamber 3, and a plurality of rows of fourth air outlets 131 are formed in an air outlet of the second air knife 13.
The second air knife 13 of this embodiment is used to isolate the second reaction chamber 2 from the buffer chamber 3, so as to ensure the smooth proceeding of the substrate ligand exchange reaction.
Referring to fig. 5, the air outlet of the second air knife 13 of the present embodiment is provided with two rows of fourth air outlets 131, and the remaining portion of the air outlet may be selectively provided with the fourth air outlets 131 according to the air outlet requirement.
Further, a second valve 14 for closing the second transfer port 12 is connected to the second transfer port 12.
The second valve 14 of this embodiment is in a normally open state, and is closed after the atomic layer etching apparatus of this embodiment completes work, so as to prevent gas mixture cross contamination in the second reaction chamber 2 and the buffer chamber 3.
Furthermore, the top of the buffer chamber 3 is connected with a purging mechanism 15, and air outlets of the purging mechanism 15 are provided with a plurality of rows of fifth air outlet holes 16 and communicated with the buffer chamber 3.
The purging mechanism 15 of the present embodiment blows the inert gas into the buffer chamber 3, so that the substrate can be purged when entering the buffer chamber 3, and the purging operation is completed when the substrate leaves the buffer chamber 3.
Referring to fig. 6, the fifth outlet holes 16 of the present embodiment are arranged in a plurality of rows and columns.
Furthermore, the bottoms of the first reaction chamber 1, the second reaction chamber 2 and the buffer chamber 3 are respectively and correspondingly communicated with a first vacuum pump 17, a second vacuum pump 18 and a third vacuum pump 19.
The first vacuum pump 17 of this embodiment is used to exhaust excess reactants in the first reaction chamber 1.
The second vacuum pump 18 of this embodiment is used for exhausting the volatile etchant from the second reaction chamber 2.
The third vacuum pump 19 of the present embodiment is normally open and is used for exhausting the mixed gas of the reactant, the volatile etching material, and the like in the buffer chamber 3.
An atomic layer etching method is suitable for atomic layer etching equipment and comprises the following steps:
s101, absorbing the surface of the substrate, and forming a chemical absorption layer on the etched surface of the substrate through the precursor.
Specifically, the first pipeline 5 sprays a precursor into the first reaction chamber 1, and the precursor completes a fluorination reaction on the etched surface of the substrate to form a chemical adsorption layer.
S102, discharging excessive reactants.
Specifically, after the fluorination reaction of the substrate is completed, the first vacuum pump 17 is started to exhaust the excess reactant in the first reaction chamber 1.
S103, purging the substrate, and purging the gas residue on the surface of the substrate through inert gas.
Specifically, the substrate is moved into the buffer chamber 3 from the first reaction chamber 1 by the transmission mechanism 4, meanwhile, the purging mechanism 15 continuously sprays inert gas into the buffer chamber 3, the inert gas purges the surface of the substrate until the substrate is moved out of the buffer chamber 3 by the transmission mechanism 4 and enters the second reaction chamber 2, purging is completed, and when purging is completed, the gas in the buffer chamber 3 is rapidly discharged by the third vacuum pump 19.
S104, removing the surface of the substrate, and converting the chemical adsorption layer into a volatile etching object through the precursor.
Specifically, the second pipe 10 sprays the precursor into the reaction chamber 2, and the substrate and the precursor complete a ligand exchange reaction to generate the volatile etchant.
S105, discharging the volatile etching substances.
Specifically, the second vacuum pump 18 is started to exhaust the volatile etchant.
S106, purging the substrate, and purging the gas residue on the surface of the substrate through inert gas.
Specifically, the substrate is moved into the buffer chamber 3 again from the second reaction chamber 2 by the transmission mechanism 4, meanwhile, the purging mechanism 15 continuously sprays the inert gas into the buffer chamber 3, the inert gas purges the surface of the substrate until the substrate is moved out of the buffer chamber 3 by the transmission mechanism 4 and enters the reaction chamber 1, purging is completed, and while purging is completed, the gas in the buffer chamber 3 is discharged by the third vacuum pump 19.
S107, the steps are repeated until the substrate meets the requirement of the etching layer number.
Specifically, after the substrate is carried by the conveying mechanism 4 to complete the process, the process is continuously repeated to continuously react, and the number of etched layers is accurately controlled.
The arrows in fig. 1 each indicate the direction of movement of each gas.
This example illustrates the etching of alumina by TMA and HF as examples:
Al2O3the film is etched with HF and trimethylamine (Al (CH)3)3TMA) as a reactant; AI2O3The corrosion of the film is realized by the atomic layer etching equipment and the etching method of the embodiment.
The overall reaction formula is as follows:
Al2O3(s)+6HF(g)+4Al(CH3)3(g)→6AlF(CH3)2(g)+3H2O(g)。
this overall reaction scheme can be divided into two half-reactions: a and B:
A:Al2O3|Al2O3*(s)+6HF(g)→Al2O3|2AlF3*(s)+3H2O(g)。
B:Al2O3|2AlF3*(s)+4Al(CH3)3(g)→Al2O3*(s)+6AlF(CH3)2(g)。
the working principle is as follows: the conveying mechanism 4 puts the substrate into the first reaction chamber 1, and conveys the precursor into the first reaction chamber 1 through the first pipeline 5, the precursor reacts with the surface of the substrate, and the fluorination of the surface of the substrate is completed; the conveying mechanism 4 drives the substrate to enter the buffer chamber 3, and the purging mechanism 15 sprays inert gas into the buffer chamber 3 to purge gas residues on the substrate; the conveying mechanism 4 drives the substrate into the second reaction chamber 2, and conveys the precursor into the second reaction chamber 2 through the second pipeline 10, and the precursor and the substrate complete ligand exchange reaction, namely a layer is etched; the transmission mechanism 4 drives the substrate to reciprocate and continuously react, and the etched layer number is accurately controlled.
The preferred etching method in this embodiment is to etch aluminum oxide by TMA and HF, but the etching substance is not limited thereto, and hafnium oxide, zinc oxide, titanium oxide, aluminum nitride, titanium nitride, etc. can be etched by this apparatus. Meanwhile, for some materials needing plasma to participate in etching, plasma generating devices can be added in the first reaction chamber 1 and the second reaction chamber 2 to complete the process of surface removal type half reaction, and the etching function can be realized.
It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Furthermore, the above definitions of the various elements and methods are not limited to the specific structures, shapes, or configurations shown in the examples.
It is also noted that the illustrations herein may provide examples of parameters that include particular values, but that these parameters need not be exactly equal to the corresponding values, but may be approximated to the corresponding values within acceptable error tolerances or design constraints. Directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., refer to the direction of the drawings, and are not intended to limit the scope of the present application.
While the foregoing description shows and describes the preferred embodiments of the present invention, it is to be understood that the invention is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the inventive concept as described herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (10)

1. An atomic layer etching apparatus, comprising: the device comprises a first reaction chamber (1) for fluoridizing a substrate, a second reaction chamber (2) for ligand exchange reaction of the substrate, a buffer chamber (3) which is arranged between the first reaction chamber (1) and the second reaction chamber (2) and used for purging the substrate, and a transmission mechanism (4) which is arranged in the buffer chamber (3) and drives the substrate to do circular reciprocating motion in the first reaction chamber (1), the buffer chamber (3) and the second reaction chamber (2).
2. The atomic layer etching apparatus according to claim 1, wherein a first pipe (5) is connected to a side of the first reaction chamber (1) away from the buffer chamber (3), and a single row or double rows of first outlet holes (6) are formed in a side surface of the first pipe (5) facing the buffer chamber (3).
3. The atomic layer etching apparatus according to claim 1, wherein a first transmission port (7) for movement of the transmission mechanism (4) is formed at a connection position of the first reaction chamber (1) and the buffer chamber (3), a first air knife (8) is connected above the first transmission port (7) in the buffer chamber (3), and a plurality of rows of second air outlets (81) are formed at an air outlet of the first air knife (8).
4. An atomic layer etching apparatus according to claim 3, characterized in that a first valve (9) for closing the first transfer port (7) is connected to the first transfer port (7).
5. The atomic layer etching apparatus according to claim 1, wherein a second pipeline (10) is connected to a side of the second reaction chamber (2) away from the buffer chamber (3), and a single row or multiple rows of third gas outlets (11) are formed in one side of the second pipeline (10) facing the buffer chamber (3).
6. The atomic layer etching apparatus according to claim 1, wherein a second transmission port (12) for movement of the transmission mechanism (4) is formed at a connection position of the second reaction chamber (2) and the buffer chamber (3), a second air knife (13) is connected above the second transmission port (12) in the buffer chamber (3), and a plurality of rows of fourth air outlets (131) are formed at an air outlet of the second air knife (13).
7. An atomic layer etching apparatus according to claim 6, characterized in that a second valve (14) is connected to the second transfer port (12) for closing the second transfer port (12).
8. The atomic layer etching equipment according to claim 1, wherein a purging mechanism (15) is connected to the top of the buffer chamber (3), and a plurality of rows of fifth outlet holes (16) are arranged at the air outlet of the purging mechanism (15) and are communicated with the buffer chamber (3).
9. The atomic layer etching apparatus according to claim 1, wherein the first reaction chamber (1), the second reaction chamber (2) and the buffer chamber (3) are respectively and correspondingly communicated with a first vacuum pump (17), a second vacuum pump (18) and a third vacuum pump (19) at the bottom.
10. An atomic layer etching method applied to the atomic layer etching apparatus according to any one of claims 1 to 9, comprising the steps of:
s101, adsorbing the surface of a substrate, and forming a chemical adsorption layer on the etched surface of the substrate through a precursor;
s102, discharging excessive reactants;
s103, purging the substrate, namely purging gas residues on the surface of the substrate completely through inert gas;
s104, removing the surface of the substrate, and converting the chemical adsorption layer into a volatile etching object through the precursor;
s105, discharging the volatile etching substances;
s106, purging the substrate, wherein gas residues on the surface of the substrate are purged completely through inert gas;
s107, the steps are repeated until the substrate meets the requirement of the etching layer number.
CN202210423577.8A 2022-04-21 2022-04-21 Atomic layer etching equipment and etching method Pending CN114664631A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115181961A (en) * 2022-07-15 2022-10-14 江苏鹏举半导体设备技术有限公司 Selective atomic layer processing apparatus and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115181961A (en) * 2022-07-15 2022-10-14 江苏鹏举半导体设备技术有限公司 Selective atomic layer processing apparatus and method

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