CN114660717B - On-chip spatial light modulator, scattering focusing system and light modulation method - Google Patents
On-chip spatial light modulator, scattering focusing system and light modulation method Download PDFInfo
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Abstract
The application relates to an on-chip spatial light modulator, a scattering focusing system and a light modulation method. The on-chip spatial light modulator realizes high-speed spatial light modulation by arranging the core layer consisting of the hollow layer and the filling layer on a part of the structure of the chip, namely the substrate, and can be integrated with other optical devices because the on-chip spatial light modulator is integrated on the optical chip, so that an additional optical path is not required to be arranged, the complexity of a spatial light modulation system is reduced, and meanwhile, the complexity of waveguide connection is lower, thereby greatly reducing the cost of the whole on-chip spatial light modulator.
Description
Technical Field
The present application relates to the field of optical modulation devices, and in particular, to an on-chip spatial optical modulator, a scattering focusing system, and an optical modulation method.
Background
A Spatial Light Modulator (SLM) is a type of dynamic optical element that can spatially modulate the intensity and phase distribution of Light. The spatial light modulator is required to project an optical signal onto the modulator through an electrical signal according to a target modulation pattern to generate an optical field distribution, so as to modulate the optical signal into the target modulation pattern. The most prominent spatial light modulators are liquid crystal spatial light modulators. The method can be widely applied to the fields of optical calculation, mode recognition, information processing, display and the like, and has wide application prospect.
The traditional liquid crystal spatial light modulator realizes modulation through an SLM (selective light modulation) spatial light modulator and an optical element, the modulation speed is limited, and the traditional liquid crystal spatial light modulator cannot meet the requirement of high-speed modulation more and more along with the improvement of application requirements. And the cost is high.
This is because the response speed of a material such as liquid crystal is low and the withstand power is low. The response speed refers to the speed at which the material, liquid crystal, receives a modulated electrical signal before making the desired change. The endurance refers to the highest power that a material such as liquid crystal can withstand, and is also the highest power that can be applied to a liquid crystal spatial light modulator.
On the other hand, an additional optical path is required, the complexity of the spatial light modulation system is very high, and the modulation cost is high. Therefore, a spatial light modulation structure that can realize a high-speed spatial light modulation function and can be modulated at a low cost is urgently required.
Disclosure of Invention
In view of the above, there is a need to provide an on-chip spatial light modulator integrated on an optical chip, which is capable of meeting the requirements of high-speed modulation, high cost and high complexity of the conventional spatial light modulator.
The present application provides an on-chip spatial light modulator integrated on an optical chip, comprising:
at least one input waveguide;
at least one modulator, each modulator carried on an input waveguide;
a scattering structure comprising an edge layer and a core layer; the edge layer is of a sheet structure which surrounds the core layer and is tightly attached to the core layer; the bottom surface of the core layer is flush with the bottom surface of the edge layer, and the height of the core layer is greater than or equal to that of the edge layer; each input waveguide is fixedly connected with the edge layer;
the core layer includes:
the hollow layer is arranged in a hollow shape;
the filling layer is filled in the gap of the hollow layer; the hollow-out layer and the filling layer are tightly combined to form the core layer.
Further, the core layer is a cuboid sheet layer, the edge layer is a cuboid sheet layer with an opening in the central area, the opening is rectangular, and the core layer is embedded into the opening; the four edges of the opening are parallel to the four edges of the edge layer respectively.
Further, the refractive index of the edge layer is greater than that of the filling layer, the refractive index of the filling layer is greater than 1, the refractive index of the hollow layer is greater than that of the filling layer, and the refractive index of the hollow layer is less than or equal to that of the edge layer.
Further, the distance between the edge of the opening and the edge of the edge layer in a mutually parallel relationship is within a numerical range of greater than 0 and 50 μm or less.
Further, the height of the edge layer is within a numerical range of 100 nm or more and 1 μm or less.
Further, the height of the core layer is greater than that of the edge layer, and the height difference between the height of the core layer and the height of the edge layer is within a numerical range of greater than 0 and less than or equal to 2 micrometers.
Further, the height of the core layer is equal to the height of the edge layer, and the height of the hollow-out layer is within a numerical range of being more than or equal to 50 nanometers and less than or equal to the height of the edge layer.
Further, the modulator includes:
an intensity modulator for adjusting the amplitude of input light entering the input waveguide;
a phase modulator for adjusting a phase of input light entering the input waveguide.
The application relates to an on-chip spatial light modulator, which realizes high-speed spatial light modulation by integrating a core layer consisting of a hollow-out layer and a filling layer on an optical chip. Because the optical chip is integrated, the core layer and other optical devices can be integrated together, an additional optical path is not required to be arranged, the complexity of the spatial light modulation system is reduced, and meanwhile, the complexity of waveguide connection is low, so that the cost of the whole on-chip spatial light modulator is greatly reduced.
The present application further provides a scatter-focus system comprising:
a plurality of light sources, each light source for emitting a beam of input light;
an on-chip spatial light modulator as mentioned in the foregoing, each input waveguide of the on-chip spatial light modulator being disposed opposite to one light source to receive input light emitted from the light source; the on-chip spatial light modulator modulates each beam of input light to generate a modulated optical signal, and the modulated optical signal is output from the top surface of the core layer;
and the controller is in communication connection with the on-chip spatial light modulator and is used for setting and regulating the attribute of each modulator.
The application relates to a scattering focusing system, which inputs different input light to different input waveguides in an on-chip spatial light modulator and regulates and controls the property of the modulator on the input waveguides through a controller, so that light fields in all the input waveguides can be superposed to generate composite light, the composite light is finally output, modulation is completed, and the composite light is output from the top surface of a core layer in the on-chip spatial light modulator, and the emissivity is high and the cost is low.
The present application further provides a light modulation method applied to the scattering focusing system as mentioned in the foregoing, the light modulation method comprising:
setting a target spatial light mode through a controller, decomposing the target spatial light mode into output modes of various input waveguides through the controller, wherein the target spatial light mode can be expanded into a form shown in formula 1 from the output modes of the input waveguides;
wherein, E (u) x u y ) N is the number of input waveguides, M n (u x u y ) Output mode of input waveguide numbered n, a n Amplitude in the output mode of the input waveguide numbered n,
is the phase in the output mode of the input waveguide with the sequence number n, i is an imaginary unit;
the controller reads the output mode of each input waveguide, and calculates the amplitude and phase in the output mode of each input waveguide according to the target spatial light mode and the output mode of each input waveguide, and formula 1;
the controller adjusts parameters of the modulators corresponding to the input waveguides according to the amplitude and the phase in the output mode of each input waveguide;
and starting the light source corresponding to each input waveguide, and outputting the optical signals formed by superposing the optical signals modulated by the modulators corresponding to the input waveguides.
The application relates to an optical modulation method, for a given target spatial optical mode, different optical signals are input through different input waveguides, and the amplitude and the phase of an optical field in each input waveguide are adjusted to be superposed to generate a composite optical signal.
Drawings
Fig. 1 is a schematic diagram of an on-chip spatial light modulator according to an embodiment of the present disclosure, in which a height of a core layer is greater than a height of an edge layer.
FIG. 2 is a cross-sectional view of one embodiment of the on-chip spatial light modulator provided in FIG. 1, wherein the height of the via layer and the height of the fill layer are equal.
FIG. 3 is a cross-sectional view of another embodiment of the on-chip spatial light modulator provided in FIG. 1, wherein the height of the via layer is greater than the height of the fill layer.
Fig. 4 is a schematic diagram of an on-chip spatial light modulator having a core layer with a height equal to a height of an edge layer according to an embodiment of the present application.
Fig. 5 is a cross-sectional view of the on-chip spatial light modulator provided in fig. 4.
Fig. 6 is a top view of an edge layer in an on-chip spatial light modulator according to an embodiment of the present application.
Fig. 7 is a top view of an edge layer in an on-chip spatial light modulator according to another embodiment of the present application.
Fig. 8 is a graph of emission efficiency data corresponding to each input waveguide of an on-chip spatial light modulator according to an embodiment of the present application.
Fig. 9 is a diagram of optical field propagation of an input optical signal of a single input waveguide in a scattering structure and a corresponding far field radiation pattern.
Fig. 10 is a light field propagation diagram and a corresponding far radiation field diagram of an optical signal generated by compositely stacking a plurality of input waveguides in a scattering structure.
Fig. 11 is a schematic structural diagram of a scattering focusing system according to an embodiment of the present application.
Fig. 12 is a schematic flowchart of an optical modulation method according to an embodiment of the present application.
Reference numerals are as follows:
10-a light source; 20-an on-chip spatial light modulator; 210-an input waveguide; 220-a modulator; 230-a scattering structure; 231-an edge layer; 231 a-top surface of edge layer; 231 b-edge layer edges; 231c — bottom surface of edge layer; 231 d-first side; 231e — second edge; 231 f-third side; 231 g-fourth side; 232-core layer; 232a — top surface of core layer; 232 b-bottom surface of core layer; 232c — edge of core layer; 233-a hollow-out layer; 234-a filler layer; 235-opening; 236-edge of opening; 236 a-fifth side; 236 b-sixth side; 236 c-seventh side; 236 d-eighth side; 30-a controller.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The present application provides an on-chip spatial light modulator 20. It should be noted that the on-chip spatial light modulator 20 provided by the present application is suitable for any modulation scenario, and is particularly suitable for high-speed modulation scenarios.
In one embodiment of the present application, as shown in fig. 1, 2 and 3, the on-chip spatial light modulator 20 is integrated on an optical chip (not shown). The on-chip spatial light modulator 20 comprises at least one input waveguide 210, at least one modulator 220 and a scattering structure 230.
Each modulator 220 is carried on one input waveguide 210. The scattering structure 230 includes an edge layer 231 and a core layer 232. The edge layer 231 is a sheet structure surrounding the core layer 232 and disposed closely to the core layer 232. The bottom surface 232b of the core layer 232 is flush with the bottom surface 231c of the edge layer 231, and the height of the core layer 232 is greater than or equal to the height of the edge layer 231. Each input waveguide 210 is fixedly connected to the edge layer 231.
The core layer 232 includes a hollow layer 233 and a filling layer 234. The hollow layer 233 is formed in a hollow shape. The filling layer 234 fills the gap (not shown) of the hollow layer 233. The hollow layer 233 is tightly combined with the filling layer 234 to form the core layer 232.
Specifically, the total number of input waveguides 210 is 1 or more. The total number of modulators 220 is also greater than or equal to 1. The total number of modulators 220 is the same as the total number of input waveguides 210, i.e., one modulator 220 is disposed over each input waveguide 210.
By providing the input waveguide 210, the accuracy of the on-chip spatial light modulator 20 can be maintained at a high level. The greater the number of input waveguides 210, the more independent output modes that input waveguides 210 correspond to, and the more accurately the target spatial light mode (or the more accurately the target modulation pattern) can be achieved. Accordingly, the higher the cost.
Alternatively, in one embodiment, the number of input waveguides 210 may be 16.
The on-chip spatial light modulator 20 in this application is integrated on an optical chip, which means that the at least one input waveguide 210, the at least one modulator 220 and the scattering structure 230 are all integrated on the optical chip. Since the core layer 232 of the present application is integrated on the optical chip, the trouble of providing an additional optical path is eliminated, and thus the size of the whole scattering structure 230 is very small.
The shape of the hollowed-out layer 233 may be irregular. Fig. 1 is merely an exemplary embodiment.
As shown in fig. 1 and 2, when the height of the core layer 232 is greater than the height of the edge layer 231, it can be understood that the bottom surface 232b of the core layer 232 is flush with the bottom surface 231c of the edge layer 231, so that the core layer 232 protrudes to a certain height relative to the top surface 231a of the edge layer 231, and the height of the protruding portion is the height difference between the height of the core layer 232 and the height of the edge layer 231.
As shown in fig. 4 and 5, when the height of the core layer 232 is equal to the height of the edge layer 231, the top surface 231a of the edge layer 231 is flush with the top surface 232a of the core layer 232. Alternatively, when the height of the core layer 232 is equal to the height of the edge layer 231, it may be considered that a whole block of the edge layer 231 is etched, so as to generate a gap between the hollow layer 233 and the hollow layer 233, and then the gap of the hollow layer 233 is filled with a material, so as to finally form the filling layer 234.
In this embodiment, high-speed spatial light modulation is realized by integrating the core layer 232 composed of the hollow layer 233 and the filling layer 234 on the optical chip. Because the core layer 232 is integrated on the optical chip, the core layer 232 can be integrated with other optical devices, an additional optical path is not required to be arranged, the complexity of the spatial light modulation system is reduced, and the complexity of connection with the input waveguide 210 is low, so that the cost of the whole on-chip spatial light modulator is greatly reduced.
As shown in fig. 3, 4 and 6, in an embodiment of the present application, the core layer 232 is a rectangular parallelepiped sheet. The edge layer 231 is a rectangular parallelepiped sheet having an opening 235 in a central region. The opening 235 is rectangular. The core layer 232 is inserted into the opening 235. Four sides of the opening 235 are parallel to four sides of the edge layer 231, respectively.
Specifically, the core layer 232 may be a rectangular parallelepiped having a length and a width equal to each other. Optionally, the top surface 232a of the core layer 232 is square. The modulated optical signal is output from the top surface 232a of the core layer 232.
As shown in fig. 6 and 7, fig. 6 and 7 are top views of the edge layer 231, and the top view of the edge layer 231 can show the top surface 231a of the edge layer 231. As shown in fig. 6, the edge layer 231 has an opening 235 in the central region. As shown in fig. 7, the edge layer 231 has a first side 231d, a second side 231e, a third side 231f and a fourth side 231g. The opening 235 has a fifth side 236a, a sixth side 236b, a seventh side 236c, and an eighth side 236d.
The first side 231d and the fifth side 236a are parallel. The second side 231e and the sixth side 236b are parallel. The third side 231f and the seventh side 236c are parallel. The fourth side 231g is parallel to the eighth side 236d. The distance d1 between the first side 231d and the fifth side 236a, the distance d2 between the second side 231e and the sixth side 236b, the distance d3 between the third side 231f and the seventh side 236c, and the distance d4 between the fourth side 231g and the eighth side 236d, may be different from each other. Of course, d1, d2, d3 and d4 may also be equal to each other.
Alternatively, the height of each input waveguide 210 may be the same, and the height of the edge layer 231 may be the same as the height of the input waveguide 210. The height of input waveguide 210 is h1 in fig. 1. The height of the edge layer 231 is h2 in fig. 1.
In an embodiment of the present application, the refractive index of the edge layer 231 is greater than the refractive index of the filling layer 234, the refractive index of the filling layer 234 is greater than 1, the refractive index of the hollow-out layer 233 is greater than the refractive index of the filling layer 234, and the refractive index of the hollow-out layer 233 is less than or equal to the refractive index of the edge layer 231.
Specifically, the refractive index of the filling layer 234 is n2, the refractive index of the edge layer 231 is n1, and the refractive index of the hollow layer 233 is n3. The refractive index here refers to the refractive index of the material. In this embodiment, a condition of refractive index n1 > 1, n1 > n2 > 1, n2 < n3 ≦ n1 needs to be satisfied.
The specific structure of the core layer 232 is determined based on an inverse design algorithm of an adjoint method (adjoint method), and the specific method is as follows:
w100, a hollow layer 233 is preset. The material type of the filling layer 234 and the material type of the hollow layer 233 are selected in advance.
It is understood that the refractive index n2 of the filling layer 234 and the refractive index n3 of the hollow layer 233 are known. n2 and n3 need to satisfy n2 > 1, n2 being smaller than n3, i.e., the condition of refractive index is satisfied because the refractive index n1 of the edge layer 231 is initially unknown, and thus the condition of refractive index here has no relation to n1.
W200, presetting an inverse design region, and setting the inverse design region as a core layer 232. The detection plane is positioned 2 microns above the inverse design region and covers the top surface of the inverse design region.
Wherein the detection plane is a virtual plane which is located above the inverse design region. The area of the probe plane is greater than the surface area of the top surface 232a of the core layer 232, which is referred to as the probe plane "covering" the top surface of the inverse design area.
And W300, presetting an objective function of the emergent light field energy, wherein the expression of the objective function is set as formula 2.
Wherein the content of the first and second substances,
is a spatial vector.
As a function of the electric field.
As a function of the magnetic field. V f Is the number of the detection plane.
In addition, a preset target value F of F is set 0 。
W400, a random structure is generated in the reverse design area.
Specifically, the material mass ratio of the filling layer 234 and the material mass ratio of the hollow layer 233 are set to generate a random structure in the inverse design region. For example, the material mass ratio of the filling layer 234 is 45%, and the material mass ratio of the hollow layer 233 is 55%.
W400, performing a plurality of times of simulation operations based on the formula 2, and continuously updating the value of F until the value of F is equal to the preset target value F of F 0 。
Each simulation is divided into two steps, a forward simulation and a companion simulation. The forward simulation is performed first, followed by the companion simulation.
Wherein the forward simulation comprises:
w411, analog light sources are provided for all ports of the input waveguide 210, and the analog light sources are used for inputting a single-mode optical field to the input waveguide. Further, an FDTD (finite Difference time Domain) method is used for obtaining an electric field function of each point in the detection plane
Value of (d) and magnetic field function
And obtaining electric field functions of points in the inverse design region
Value of (a) and magnetic field function
The numerical value of (c). For the convenience of subsequent calculation, the electric field function obtained in the forward simulation is recorded as
The magnetic field function obtained in the forward simulation is recorded as
W412, detecting the electric field function of each point in the plane according to the expression of the objective function F (see formula 1)
Value of (d) and magnetic field function
And electric field function of each point in the inverse design region
Value of (d) and magnetic field function
The light incident field value of the simulated light source in the accompanying process is calculated, and the calculation formula is formula 3.
Wherein, mu 0 Is a vacuum magnetic permeability.
Is a first parameter of the plurality of parameters,
is the second parameter.
Wherein the companion simulation comprises:
w421, using the detection plane as the light source input, where the input light field value is determined by forward simulation, the light field input of each point in the area of the detection plane is equivalent to an electric dipole and a magnetic dipole, the size and direction of the electric dipole are in forward simulation formula 3
The magnitude and direction of the magnetic dipole being positive in the simulation equation 3
Specifically, in this step, the detection plane is input as a light source. The light field properties of the detection plane can be calculated by equation 3.
And W422, obtaining the electric field value of each point in the inverse design region by using an FDTD method. The value of the electric field obtained in the adjoint simulation is recorded as
The same algorithm is used as
The algorithm of (1). Further, the gradient value of each unit region of the objective function in the inverse design region can be obtained according to formula 4.
Where δ F is the gradient value of each unit region in the inverse design region. Alpha is a coefficient related to the refractive index of the material, and specifically alpha is related to n2 and n3. This step is essentially based on the gradient descent principle to change the refractive index of each unit region within the inverse design region.
Specifically, the step divides the inverse design area into a plurality of areas, each area being a cell. This step changes the refractive index of each unit region in the inverse design region according to the gradient descent principle.
W430, calculating F according to the changed refractive index of each unit region in the inverse design region, and obtaining F after one simulation operation.
In one embodiment of the present application, the spacing between the edges of the openings in parallel relationship to the edges of the edge layer is in a range of values greater than 0 and less than or equal to 2 microns.
Specifically, as shown in fig. 7, d1, d2, d3, and d4 may all be within a range of values greater than 0 and equal to or less than 2 microns.
Of course, d1, d2, d3 and d4 may be equal and are all 1 micron.
In an embodiment of the present application, the height of the edge layer 231 is within a range of a value between 100 nm or more and 1 μm or less.
Specifically, the height of the edge layer 231 may be 220 nm. The height of the edge layer 231 is h2 in fig. 1.
In an embodiment of the present application, the height of the core layer 232 is greater than the height of the edge layer 231, and the difference between the height of the core layer 232 and the height of the edge layer 231 is within a range of values greater than 0 and less than or equal to 2 μm.
Specifically, in the present embodiment, the height of the core layer 232 is greater than the height of the edge layer 231, that is, in the embodiment shown in fig. 1, the core layer 232 is raised with respect to the top surface 231a of the edge layer 231 by a certain height. At this time, the height of the core layer 232 and the height of the edge layer 231 have a certain height difference, i.e., h3 in fig. 1.
Alternatively, the height difference between the height of the core layer 232 and the height of the edge layer 231 may be 600 nm.
The core layer 232 is known to include a hollowed-out layer 233 and a filling layer 234. Alternatively, the heights of the hollow layer 233 and the filling layer 234 may be equal, as shown in fig. 2. Optionally, the height of the hollow layer 233 may also be greater than the height of the filling layer 234, as shown in fig. 3.
FIG. 1 isbase:Sub>A sectional line A-A, and FIGS. 2 and 3 are sectional views of FIG. 1.
In an embodiment of the present application, the height of the core layer 232 is equal to the height of the edge layer 231, and the height of the hollow layer 233 is within a range of values greater than or equal to 50 nm and less than or equal to the height of the edge layer 231.
In this embodiment, the height of the core layer 232 is equal to the height of the edge layer 231, that is, the height is equal to the technical scheme of etching a whole edge layer 231, so as to generate a gap between the hollow layer 233 and the hollow layer 233, filling a material into the gap of the hollow layer 233, and finally forming the filling layer 234.
In this embodiment, the height of the hollow layer 233 is within a range of a value greater than or equal to 50 nm and less than or equal to the height of the edge layer 231. Referring to fig. 5, in the embodiment shown in fig. 5, a height h4 of the hollow layer 233 is less than a height h2 of the edge layer 231.
In an embodiment of the present application, the modulator 220 includes an intensity modulator and a phase modulator. The intensity modulator is used to adjust the amplitude of the input light entering the input waveguide 210. The phase modulator is used to adjust the phase of the input light entering the input waveguide 210.
In particular, the intensity modulator and the phase modulator are not shown in the figures of the present application.
In this embodiment, the accuracy of on-chip spatial light modulator 20 can be maintained at a high level by providing input waveguide 210.
The present application further provides a scattering focusing system.
In an embodiment of the present application, as shown in fig. 11, the scattering focus system comprises a plurality of light sources 10, an on-chip spatial light modulator 20 as mentioned in the foregoing and a controller 30.
Each light source 10 is arranged to emit a beam of input light. Each input waveguide 210 in the on-chip spatial light modulator 20 is disposed opposite to one light source 10 to receive input light emitted from the light source 10. The on-chip spatial light modulator 20 modulates each input light beam to generate a modulated light signal. The modulated optical signal is output from the top surface 232a of the core layer 232. The controller 30 is communicatively coupled to the on-chip spatial light modulator 20. The controller 30 is used to set and regulate the properties of each modulator 220.
Specifically, as shown in fig. 8, the emission efficiency after the input of 16 input waveguides 210 is represented by a bar graph, and the dotted line is an emission efficiency line of 37%, it can be seen that the emission efficiency after the input of 16 input waveguides 210 is greater than 37% and most of the emission efficiency is greater than 40%, and very high emission efficiency can be achieved.
In this embodiment, by inputting different input light into different input waveguides 210 in the on-chip spatial light modulator 20 and regulating and controlling the attribute of the modulator 220 on the input waveguides 210 by the controller 30, optical fields in the respective input waveguides 210 may be superimposed to generate composite light, and finally the composite light is output to be modulated and output from the top surface 232a of the core layer 232 in the on-chip spatial light modulator 20, which has high emissivity and low cost.
The application also relates to a light modulation method.
In addition, the optical modulation method provided by the present application is not limited to its implementation subject. Alternatively, the implementation subject of the light modulation method provided by the present application may be the scattering focusing system mentioned in the foregoing.
As shown in fig. 12, in an embodiment of the present application, the light modulation method includes the following steps S100 to S400:
s100, setting a target spatial light mode through the controller 30, and decomposing the target spatial light mode into output modes of the respective input waveguides 210 through the controller 30, where the target spatial light mode can be expanded from the input waveguide output mode to a form as shown in formula 1.
Wherein, E (u) x u y ) Is the target spatial light pattern. n is the number of input waveguides 210. M is a group of n (u x u y ) The output mode of input waveguide 210 numbered n. a is a n Amplitude in the output mode of input waveguide 210 numbered n.
Phase in the output mode of input waveguide 210 numbered n. i is an imaginary unit.
S200, the controller 30 reads the output mode of each input waveguide 210, and calculates the amplitude and phase in the output mode of each input waveguide 210 according to the target spatial light mode and the output mode of each input waveguide 210, and formula 1.
S300, the controller 30 adjusts parameters of the modulator 220 corresponding to each input waveguide 210 according to the amplitude and phase in the output mode of each input waveguide 210.
S400, turning on the light source 10 corresponding to each input waveguide 210, and outputting the optical signal formed by superimposing the optical signals modulated by the modulators 220 corresponding to the input waveguides 210.
Specifically, since the text refers to the serial number of the input waveguide, the serial number "210" of the input waveguide is not added, so as to avoid confusion. For example, fig. 9 shows the optical field propagation pattern and the corresponding far radiation field pattern of input waveguide No. 3, input waveguide No. 5, input waveguide No. 11 and input waveguide No. 15 when acting alone, that is, the optical field propagation pattern and the far radiation field pattern of a single waveguide. In fig. 9, the upper pictures (a) (b) (c) (d) are light field propagation pictures, and the lower pictures (e) (f) (g) (h) are far radiation field pictures.
Fig. 10 is a light field propagation diagram and a corresponding far radiation field diagram when the input waveguide No. 3 and the input waveguide No. 11 are compounded and the input waveguide No. 3 and the waveguide No. 5 are compounded. Specifically, in fig. 10 (a), the input waveguide 3 and the input waveguide 11 input electric field amplitude and phase are the same. In fig. 10 (b), the input electric fields of the input waveguide 3 and the input waveguide 11 have the same amplitude and opposite phases. In fig. 10 (c), the input waveguides 3 and 5 have the same input electric field amplitude and phase. Input electric field oscillation of input waveguide 3 and input waveguide 5 in fig. 10 (d)The amplitudes are the same and the phases are opposite. In fig. 10, the upper pictures (a) (b) (c) (d) are light field propagation pictures, and the lower pictures (e) (f) (g) (h) are far radiation field pictures, as in fig. 9. Ux, uy in fig. 9 and 10 can be seen as the X-and Y-coordinates of the projected image after projection of the spatial vector onto the X-Y plane of the three-dimensional spatial coordinate system X-Y-Z. In relation to the spherical coordinates theta,
the following relationships exist:
the ux, uy coordinates are used for convenience to show the radiation far field pattern.
It can be seen that the obviously compounded light field distribution has obvious change, representing the generation of the superposition effect of amplitude and phase, and can be used for modulation.
In this embodiment, for a given target spatial light mode, different optical signals are input through different input waveguides 210, and the amplitude and phase of the optical field in each input waveguide 210 are adjusted to superpose and generate a composite optical signal, and compared with the modulation of a single pixel unit by a conventional spatial light modulator, the on-chip spatial light modulator 20 in the present application modulates different independent output modes, and the different independent output modes are linearly independent, and do not generate cross light or mutual disturbance influence, so that the perfect output of the target spatial light mode can be accurately realized.
The technical features of the embodiments described above may be arbitrarily combined, the order of execution of the method steps is not limited, and for simplicity of description, all possible combinations of the technical features in the embodiments described above are not described, however, as long as there is no contradiction between the combinations of the technical features, the combinations should be considered as being within the scope of the present description.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present application. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present application shall be subject to the appended claims.
Claims (10)
1. An on-chip spatial light modulator integrated on an optical chip, comprising:
at least one input waveguide;
at least one modulator, each modulator carried on an input waveguide;
a scattering structure comprising an edge layer and a core layer; the edge layer is of a sheet structure which surrounds the core layer and is tightly attached to the core layer; the bottom surface of the core layer is flush with the bottom surface of the edge layer, and the height of the core layer is greater than or equal to that of the edge layer; each input waveguide is fixedly connected with the edge layer;
the core layer includes:
the hollow layer is arranged in a hollow shape;
the filling layer is filled in the gap of the hollow-out layer; the hollow-out layer and the filling layer are tightly combined to form the core layer.
2. The on-chip spatial light modulator of claim 1, wherein the core layer is a rectangular parallelepiped sheet, the edge layer is a rectangular parallelepiped sheet having an opening in a central region, the opening is rectangular, and the core layer is embedded in the opening; the four sides of the opening are parallel to the four sides of the edge layer respectively.
3. An on-chip spatial light modulator according to claim 2 wherein the refractive index of the edge layer is greater than the refractive index of the fill layer, the refractive index of the fill layer is greater than 1, the refractive index of the openwork layer is greater than the refractive index of the fill layer and the refractive index of the openwork layer is less than or equal to the refractive index of the edge layer.
4. An on-chip spatial light modulator according to claim 3 wherein the spacing between the edges of the openings in parallel relationship to each other and the edges of the edge layer is in the range of values greater than 0 and equal to or less than 50 microns.
5. An on-chip spatial light modulator according to claim 4 wherein the height of said edge layer is in a range of values between 100 nm and 1 μm.
6. An on-chip spatial light modulator according to claim 5 wherein the height of the core layer is greater than the height of the edge layer, and the difference between the height of the core layer and the height of the edge layer is in a range of values greater than 0 and less than or equal to 2 microns.
7. An on-chip spatial light modulator according to claim 5 wherein the height of the core layer is equal to the height of the edge layer, and the height of the hollow out layer is within a range of values equal to or greater than 50 nm and equal to or less than the height of the edge layer.
8. An on-chip spatial light modulator according to claim 6 or 7 wherein said modulator comprises:
an intensity modulator for adjusting the amplitude of input light entering the input waveguide;
a phase modulator for adjusting a phase of input light entering the input waveguide.
9. A scatter focus system, comprising:
a plurality of light sources, each light source for emitting a beam of input light;
an on-chip spatial light modulator according to any of claims 1-8, each input waveguide of the on-chip spatial light modulator being positioned opposite a light source to receive input light emitted by the light source; the on-chip spatial light modulator modulates each beam of input light to generate a modulated optical signal, and the modulated optical signal is output from the top surface of the core layer;
and the controller is in communication connection with the on-chip spatial light modulator and is used for setting and regulating the attribute of each modulator.
10. A light modulation method applied to the scattering focus system as claimed in claim 9, the light modulation method comprising:
setting a target spatial light mode through a controller, decomposing the target spatial light mode into output modes of various input waveguides through the controller, wherein the target spatial light mode can be expanded into a form shown in formula 1 from an input waveguide output mode;
wherein, E (u) x u y ) N is the number of input waveguides, M n (u x u y ) Output mode of input waveguide numbered n, a n Amplitude in the output mode of the input waveguide numbered n,
is the phase in the output mode of the input waveguide with the sequence number n, i is an imaginary unit;
the controller reads the output mode of each input waveguide, and calculates the amplitude and phase in the output mode of each input waveguide according to the target spatial light mode and the output mode of each input waveguide and formula 1;
the controller adjusts parameters of the modulators corresponding to the input waveguides according to the amplitude and the phase in the output mode of each input waveguide;
and starting the light source corresponding to each input waveguide, and outputting the optical signals formed by superposing the optical signals modulated by the modulators corresponding to the input waveguides.
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