CN114659540B - High-sensitivity surface acoustic wave vector magnetic field sensing system based on magnetic bias structure - Google Patents
High-sensitivity surface acoustic wave vector magnetic field sensing system based on magnetic bias structure Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 84
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 39
- 230000035945 sensitivity Effects 0.000 claims abstract description 26
- 238000002161 passivation Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 10
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910000889 permalloy Inorganic materials 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 22
- 239000013078 crystal Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 230000005294 ferromagnetic effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005316 antiferromagnetic exchange Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910002546 FeCo Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000001259 photo etching Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
Abstract
A high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic bias structure belongs to the technical field of electronic information materials and devices. The device comprises a forward-bias MSAW sensor, a reverse-bias MSAW sensor and a mixer, wherein the forward-bias MSAW sensor and the reverse-bias MSAW sensor comprise SAW resonators, insulating layers, magnetic sensitive layers and insulating passivation layers which are sequentially arranged from bottom to top; wherein opposite bias fields are applied to the forward bias MSAW sensor and the reverse bias MSAW sensor. The invention adopts two MSAW sensors with opposite bias fields, and compared with a system composed of single MSAW sensor, the maximum frequency shift quantity delta f max Doubling the frequency to 8MHz or more; the detection sensitivity df/dH is doubled and reaches 1000kHz/Oe or above; the linear detection interval is shifted from 5Oe-15Oe to-5 Oe-5Oe.
Description
Technical Field
The invention belongs to the technical field of electronic information materials and devices, and particularly relates to a high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic field bias structure.
Background
Magnetic field sensors based on Surface Acoustic Wave (SAW) technology and magnetostrictive materials are also known as magneto-acoustic wave (MSAW) resonators or magneto-acoustic wave delay lines, which have been attracting attention due to their advantages of high sensitivity, small volume, easy starting of vibrations, etc. Giant Young's modulus effect of magnetostrictive material is utilized by the surface acoustic wave magnetic field sensorWhen the external magnetic field changes, the Young's modulus effect of the magnetic sensitive layer changes, and finally the center frequency of the device changes, so that the high-sensitivity detection of the magnetic field can be realized. I.e. according to the formulaWherein E is Young's modulus of the material, ρ is density of the material, p is half-wavelength width, and the change of the detection magnetic field is obtained by measuring Δf. Therefore, the sensor has high magnetic field sensitivity and good linearity, and is small in size and easy to integrate, so that the sensor has extremely high practical value in the field of magnetic field detection.
For research on a magneto-acoustic surface wave (MSAW) device, smole et al (P.Smole, W.Ruile, C.Korden, et al, magnetic tunable SAW-resonator [ C ]. IEEE International Frequency Control Symposium & PDA Exhibition Jointly with the European Frequency & Time for um.IEEE,2003,1-4) prepared a single-port resonator by a sacrificial layer technique using ZnO as a piezoelectric material and FeCoSiB as a magnetically sensitive layer, realized a large frequency shift amount, and a frequency adjustment amount of-1.21% around 1.2 GHz. However, the application of low-frequency or direct-current magnetic fields has not been discussed more, and the manufacturing process is complicated and the repeatability is poor. Liu et al (X.L.Liu, T.Bei, X.F.Yang, et al self-biased vector magnetic sensor based on a Love-type surface acoustic wave resonator [ J ]. Applied Physics Letters,2018,113 (8): 082402) propose a resonant sensor based on Love wave mode, which has a certain frequency response in low frequency or even direct current magnetic field detection, but has obvious hysteresis effect, which is unfavorable for linear detection, and meanwhile, the maximum detection sensitivity is only 663.98Hz/μT, which cannot meet the application requirement of high sensitivity. Li, hui et al (M.Li, C.Dong, H.Chen, et al ultra-sensitive NEMS magnetoelectric sensor for picotesla DC magnetic field detection [ J ]. Applied Physics Letters,2017,110 (14): 143510) propose a contour mode-based resonant MSAW device, such a sensor can realize detection of low-frequency or even direct-current magnetic fields, the magnetic frequency shift reaches 3.19MHz, the sensitivity is as high as 2.8Hz/nT when the direct-current magnetic fields are detected, but the high-sensitivity working point is near 12Oe, and the detection sensitivity df/dH is near zero when the zero field is detected. Wang et al (W.Wang, Y.Jia, X.Xue, et al grade-patterned FeCo coated surface acoustic wave device for sensing magnetic field [ J ]. AIP Advances,2018,8 (1): 015134) employ a difference frequency structure to enable the sensors to achieve temperature drift and other noise suppression, wherein one sensor surface has a magnetostrictive film and the other surface has no magnetostrictive film or is replaced with other metals. However, this structure has the following two problems: the difference frequency structure can improve the magnetic field resolution by partially suppressing noise, but cannot improve the magnetic field sensitivity of the resonance type or delay line type MSAW sensor; secondly, the center frequency and frequency/phase temperature coefficient of the resonant or delay line type MSAW sensor without the magnetostrictive film is not equal to that of such a device coated with the magnetostrictive film, and thus the difference frequency structure does not sufficiently suppress the temperature drift.
Disclosure of Invention
The invention aims at overcoming the defects existing in the background technology, and provides a high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic bias structure, which can be used in a surface acoustic wave resonator and a delay line for magnetic field sensing and detection or magnetic field tuning.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
the high-sensitivity surface acoustic wave vector magnetic field sensing system based on the magnetic bias structure comprises a forward bias MSAW sensor, a reverse bias MSAW sensor and a mixer, wherein the forward bias MSAW sensor and the reverse bias MSAW sensor comprise a SAW resonator (1), an insulating layer (2), a magnetic sensitive layer (3) and an insulating passivation layer (6) which are sequentially arranged from bottom to top; wherein opposite bias fields are applied to the forward bias MSAW sensor and the reverse bias MSAW sensor.
Furthermore, the bias field is applied to the forward bias MSAW sensor and the reverse bias MSAW sensor by arranging an antiferromagnetic layer (4) between the magnetically sensitive layer (3) and the insulating passivation layer (6) or arranging permanent magnets (5) with opposite polarities at two sides of the SAW resonator (1).
Further, the magnitude of the applied bias field is adjusted, so that the forward bias MSAW sensor and the reverse bias MSAW sensor have the highest sensitivity under the zero field.
Further, the SAW resonator comprises a piezoelectric monocrystal and interdigital electrodes which are sequentially arranged; the piezoelectric monocrystal is quartz monocrystal or LiTaO 3 、LiNbO 3 The thickness of the isobaric single crystal is 0.2-1 mm; the interdigital electrode is Cu, al or the like, and the thickness is 50-150 nm.
Further, the insulating layer is SiO 2 、Al 2 O 3 、HfO 2 、TiO 2 Or ZnO, etc., with a thickness of 200 to 4000nm.
Further, the magnetically sensitive layer is an amorphous film such as FeSiB, feSiBC, feCoSiB, feGaB and the like, and the thickness is 50-400 nm.
Further, the magnetically sensitive layer is an amorphous film/(permalloy/amorphous film) n N is a positive integer.
Further, the insulating passivation layer is SiO 2 、Al 2 O 3 、HfO 2 、TiO 2 Or ZnO, etc., and has a thickness of 20 to 100nm.
Further, the antiferromagnetic layer is IrMn, feMn, etc., and the thickness is 20-200 nm.
Furthermore, in the forward bias MSAW sensor and the reverse bias MSAW sensor, the materials and the thicknesses of the magnetically sensitive layers are the same, so that the temperature drift can be effectively inhibited.
Furthermore, the SAW resonator is designed by adopting the Love wave mode, and has more obvious Young modulus effect than that excited by the traditional Rayleigh wave, thus having higher magnetic field sensitivity.
The beneficial effects of the invention are as follows:
1. the invention provides a high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic bias structure, which adopts two MSAW sensors with opposite bias fields, and compared with a system formed by single MSAW sensors, the system has the maximum frequency shift quantity delta f max Doubling the frequency to 8MHz or more; the detection sensitivity df/dH is doubled and reaches 1000kHz/Oe or above; the linear detection interval is moved from 5Oe-15Oe to-5Oe-5Oe。
2. The high-sensitivity surface acoustic wave vector magnetic field sensing system based on the magnetic bias structure provided by the invention adopts two MSAW sensors with opposite bias fields, and the materials and the thicknesses of the two sensors are the same, namely the center frequency and the frequency/phase temperature coefficient of the two MSAW sensors are the same, so that the temperature drift can be further restrained, and the system has better temperature stability.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic bias structure;
FIG. 2 is a schematic diagram of a structure in which a ferromagnetic/antiferromagnetic exchange bias structure is used to apply a bias field (a) and a permanent magnet bias structure is used to apply a bias field (b) in the high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic bias structure provided by the invention;
FIG. 3 is a plot of frequency shift of the easy axis (a) and the hard axis (b) for a single MSAW vector sensor without a bias field;
fig. 4 is a schematic mixing diagram of a high-sensitivity magneto-electric vector sensor based on a magnetic field bias structure.
Detailed Description
The technical scheme of the invention is described in detail below with reference to the accompanying drawings and examples.
The invention provides a high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic bias structure, which is based on the following principle:
FIG. 3 is a plot of frequency shift of the easy axis (a) and the hard axis (b) for a single MSAW vector sensor without a bias field; wherein, the single MSAW vector sensor comprises a SAW resonator (1) and an SiO which are arranged in sequence from bottom to top 2 An insulating layer (2), a magnetically sensitive layer (3) of FeCoSiB/NiFe/FeCoSiB and SiO 2 An insulating passivation layer (6). As can be seen from fig. 3, the frequency shift curve along the easy axis direction in the single MSAW vector sensor is almost a horizontal straight line, i.e. the frequency is not changed substantially with the change of the external magnetic field; the frequency shift curve along the hard axis direction is a "w-shaped" curve axisymmetric about H (magnetic field) =0. When the magnetic field strength increases from 0Oe to 5Oe, the resonant frequencyIs maintained substantially unchanged. This is due to SAW resonator surface relief and periodic interface modulation. The resonance frequency suddenly drops from 5Oe, the linearity is very strong, the sensitivity is very high, the sensitivity of the device is up to 513.2kHz/Oe, and the linear interval range is 5Oe-15Oe. And then the magnetic field intensity is continuously improved, the resonant frequency of the device is continuously increased from a minimum value, the change slope is gradually reduced, and the resonant frequency approaches to a maximum value 449Oe when the change slope reaches about 100 Oe. The Young modulus starts to decrease along with the decrease of the magnetic field, and the positive and negative test curves have high overlap ratio and basically return according to the trend of the original curves due to the sandwich structure of FeCoSiB/NiFe/FeCoSiB and small hysteresis effect. When the magnetic field reaches-5 Oe in the opposite direction, the frequency starts to decrease, the maximum sensitivity is between-5 Oe and-15 Oe, the linearity of the interval is very good, and the sensitivity is as high as 498kHz/Oe. In conclusion, the single MSAW vector sensor can be obtained, has excellent vector sensitivity and very high sensitivity, the maximum frequency shift amount is 4MHz, the maximum detection sensitivity is about 500kHz/Oe, and the linear working range is 5Oe to 15Oe or-5 Oe to-15 Oe. However, since the difficult axis frequency shift curve of the single MSAW vector sensor is axisymmetric about h=0, the sensitivity near zero field is almost zero, and it is difficult to perform magnetic field detection near zero field. Based on this, applying a bias magnetic field in the hard axis direction, i.e. introducing a ferromagnetic/antiferromagnetic exchange bias structure and a permanent magnet bias structure, the frequency shift curve will be shifted equidistant from the zero field to the left or right, shifting the highest sensitivity operating point to near zero field, where the zero field sensitivity will no longer be zero, but with a highest detection sensitivity of about 500kHz/Oe.
On the basis, the invention adopts two MSAW sensors, and applies bias magnetic fields with opposite directions on hard axes of the two MSAW sensors, so that a frequency shift curve of the hard axes is equidistant translated towards the left side and the right side of an H (magnetic field) =0 axis, and then the output frequencies of the two sensors with forward and reverse direction offset are mixed by a mixer, so as to achieve the purposes of superposing the frequency shift (the maximum frequency shift reaches or exceeds 8 MHz), improving the zero field detection sensitivity (the detection sensitivity is about 1000 kHz/Oe) of the sensors, and expanding the linear working range (the linear detection interval is-5 Oe-5 Oe).
Example 1
A high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic field bias structure is shown in figure 1 and comprises a forward bias MSAW sensor, a reverse bias MSAW sensor and a mixer, wherein a bias field H from left to right is applied to the forward bias MSAW sensor B Applying a bias field H from right to left to the reverse bias MSAW sensor B . The forward bias MSAW sensor and the reverse bias MSAW sensor comprise SAW resonators (1), an insulating layer (2), a magnetically sensitive layer (3), an antiferromagnetic layer (4) and an insulating passivation layer (6) which are sequentially arranged from bottom to top; the SAW resonator comprises a piezoelectric single crystal and an interdigital electrode which are sequentially arranged, wherein the piezoelectric single crystal is ST-cut 90-degree X quartz single crystal, the interdigital electrode is Al metal, the wavelength is 10 mu m, and the metallization rate is set to be 0.5; the insulating layer is SiO 2 The metal layer is used for isolating the interdigital electrode and other metal layers and is used as a Love wave conductive layer, and the thickness is 800nm; the magnetically sensitive layer is FeCoSiB/NiFe/FeCoSiB with the thickness of 105nm; the antiferromagnetic layer is IrMn with the thickness of 50nm, and when the top pinning mode is adopted to prepare the ferromagnetic/antiferromagnetic film, an induced magnetic field from left to right along the x-axis direction is needed to be externally applied, so as to obtain a bias magnetic field H in the direction shown in the figure 2 (a) B Obtaining a forward bias MSAW, and conversely, obtaining a reverse bias MSAW by externally applying an induced magnetic field from right to left along the x-axis direction; the insulating passivation layer is SiO 2 The thickness was 50nm.
A manufacturing method of a high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic field bias structure specifically comprises the following steps:
step 1, selecting two ST-cut 90-degree X quartz single crystals, and respectively photoetching interdigital electrodes on the quartz single crystals to obtain two SAW resonators; the SAW resonator has the size of 2.4mm x 2mm, and the line width of the interdigital electrode is 2.5 mu m and the thickness is 150nm;
step 2, depositing a layer of SiO on the SAW resonator obtained in the step 1 by adopting a magnetron sputtering method 2 An insulating layer; wherein the sputtering target material has the diameter ofSiO of (2) 2 Target (purity 99.99%), sputtering air pressure 0.3Pa, radio frequency power RF150W, thickness 800nm;
step 3, depositing a 50nmFeCoSiB/5nmNIFe/50nmFeCoSiB magnetically sensitive layer on the insulating layer obtained in the step 2 by adopting direct current magnetron sputtering; wherein, when preparing FeCoSiB film, the sputtering target material has the diameter ofFeCoSiB target with purity of 99.5%, sputtering air pressure of 0.2Pa and power DC of 110W; when preparing NiFe film, the sputtering target material is of diameter +.>A NiFe target with purity of 99.5%, sputtering air pressure of 0.1Pa and radio frequency power of RF28W; when preparing a magnetic sensitive layer on two SAW resonators, applying an induced magnetic field with the size of 150Oe and opposite directions, and correspondingly biasing the two structures positively and negatively;
step 4, depositing an IrMn antiferromagnetic layer on the magnetically sensitive layer by adopting a magnetron sputtering method under the induced magnetic field in the step 3, wherein the sputtering power is 30W, the sputtering air pressure is 0.3Pa, and the antiferromagnetic layer thickness is 50nm; because the induced magnetic field directions are antiparallel, two MSAW sensors with the same bias fields and opposite directions can be obtained, namely the MSAW sensors with opposite bias structures;
step 5, depositing SiO on the antiferromagnetic layer obtained in the step 4 by adopting a magnetron sputtering method 2 An insulating passivation layer; wherein the diameter of the sputtering target material is selected asSiO with 99.99% purity 2 The target, sputtering air pressure 0.3Pa, radio frequency power RF150W, thickness 50nm.
Fig. 4 is a schematic mixing diagram of a high-sensitivity surface acoustic wave vector magnetic field sensor based on a magnetic field bias structure. Since the frequency shift curve of a single MSAW vector sensor is axisymmetric about h=0, as shown by the solid line of fig. 4 symmetric about the y-axis; when the MSAW sensor is externally applied with a bias field H B >After 0, the frequency shift curve shifts rightward, and the output frequency is f 1 As indicated by the dashed line in the first quadrant of fig. 4. Similarly, if under the same deposition conditions, only the bias field H will be B Is adjusted to the opposite direction, namely, minus H with the same size and opposite direction is added B <0, the frequency shift curve will shift to the left by the same distance, at which time the output frequency is f 2 As shown by the dash-dot line in the second quadrant of fig. 4. After mixing by a mixer, f is obtained by difference frequency calculation Mixing of frequencies ＝f 1 -f 2 As shown by the solid line across the second, four quadrants in fig. 4. As can be seen from fig. 4, the maximum frequency shift amount Δf is compared with a system composed of a single MSAW vector sensor max Doubling the frequency to 8MHz; the detection sensitivity df/dH is doubled and reaches 1000kHz/Oe; the linear detection interval is shifted from 5Oe-15Oe to-5 Oe-5Oe.
Example 2
This embodiment differs from embodiment 1 in that: the forward-bias MSAW sensor and the reverse-bias MSAW sensor comprise SAW resonators (1), an insulating layer (2), a magnetic sensitive layer (3) and an insulating passivation layer (6) which are sequentially arranged from bottom to top, permanent magnets (5) with opposite polarities are placed on two sides of each SAW resonator (1), the permanent magnets are NbFeB, and a placement mode shown in fig. 2 (b) is adopted to obtain a bias field H from left to right B And further obtaining a forward bias MSAW, and otherwise, adjusting the direction of the anode and the cathode to obtain a reverse bias MSAW. In the manufacturing process, two permanent magnets with opposite polarities are adhered to the two sides of the reflecting grating of one MSAW device, the two permanent magnets are prevented from being attracted and close by adopting an adhesion mode, and the two permanent magnets with opposite polarities are adhered to the two sides of the other MSAW device, so that the magnetic directions of the two permanent magnets are opposite.
Claims (5)
1. The high-sensitivity surface acoustic wave vector magnetic field sensing system based on the magnetic bias structure is characterized by comprising a forward bias MSAW sensor, a reverse bias MSAW sensor and a mixer, wherein the forward bias MSAW sensor and the reverse bias MSAW sensor comprise a SAW resonator (1), an insulating layer (2), a magnetic sensitive layer (3) and an insulating passivation layer (6) which are sequentially arranged from bottom to top; the forward bias MSAW sensor and the reverse bias MSAW sensor apply opposite bias fields;
the SAW resonator comprises a piezoelectric monocrystal and interdigital electrodes which are sequentially arranged, wherein the piezoelectric monocrystal is ST-cut 90-degree X quartz monocrystal, and the thickness is 0.2-1 mm;
the bias field is applied to the forward bias MSAW sensor and the reverse bias MSAW sensor by arranging an antiferromagnetic layer (4) between the magnetically sensitive layer (3) and the insulating passivation layer (6) or arranging permanent magnets (5) with opposite polarities at two sides of the SAW resonator (1);
the magnetic sensitive layer is an amorphous film/(permalloy/amorphous film) n N is a positive integer;
in the forward bias MSAW sensor and the reverse bias MSAW sensor, the materials and the thicknesses of the magnetically sensitive layers are the same.
2. The high-sensitivity surface acoustic wave vector magnetic field sensing system based on the magnetic bias structure according to claim 1, wherein the interdigital electrode is Cu or Al, and the thickness is 50-150 nm.
3. The magnetic bias structure-based high-sensitivity surface acoustic wave vector magnetic field sensing system according to claim 1, wherein the insulating layer is SiO 2 、Al 2 O 3 、HfO 2 、TiO 2 Or ZnO with the thickness of 200-4000 nm.
4. The magnetic bias structure-based high-sensitivity surface acoustic wave vector magnetic field sensing system according to claim 1, wherein the insulating passivation layer is SiO 2 、Al 2 O 3 、HfO 2 、TiO 2 Or ZnO with the thickness of 20-100 nm.
5. The high sensitivity surface acoustic wave vector magnetic field sensing system based on magnetic bias structure according to claim 1, wherein the antiferromagnetic layer is IrMn, feMn, and has a thickness of 20-200 nm.
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