CN114659540A - High-sensitivity surface acoustic wave vector magnetic field sensing system based on magnetic bias structure - Google Patents
High-sensitivity surface acoustic wave vector magnetic field sensing system based on magnetic bias structure Download PDFInfo
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- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
Abstract
A high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic bias structure belongs to the technical field of electronic information materials and devices. The sensor comprises a forward bias MSAW sensor, a reverse bias MSAW sensor and a mixer, wherein the forward bias MSAW sensor and the reverse bias MSAW sensor comprise an SAW resonator, an insulating layer, a magnetic sensitive layer and an insulating passivation layer which are sequentially arranged from bottom to top; wherein opposite bias fields are applied to the forward-biased MSAW sensor and the reverse-biased MSAW sensor. The invention adopts two MSAW sensors with opposite bias fields, and compared with a system consisting of a single MSAW sensor, the maximum frequency shift delta fmaxDoubled to 8MHz or above; the detection sensitivity df/dH is doubled and reaches 1000kHz/Oe or above; the linear detection interval is shifted from 5Oe-15Oe to-5 Oe-5 Oe.
Description
Technical Field
The invention belongs to the technical field of electronic information materials and devices, and particularly relates to a high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic field bias structure.
Background
Magnetic field sensors based on Surface Acoustic Wave (SAW) technology and magnetostrictive materials, also known as Magnetic Surface Acoustic Wave (MSAW) resonators or magnetic surface acoustic wave delay lines, have attracted attention because of their high sensitivity, small size, and susceptibility to oscillation. The surface acoustic wave magnetic field sensor utilizes giant Young modulus effect of magnetostrictive materials, when an external magnetic field changes, Young modulus effect of a magnetic sensitive layer changes, and finally central frequency of a device changes, so that high-sensitivity detection of the magnetic field can be realized. I.e. according to the formula
Wherein E is the Young modulus of the material, rho is the density of the material, p is the half-wavelength width, and the change of the detection magnetic field is obtained by measuring delta f. Therefore, the sensor not only has higher magnetic field sensitivity and good linearity, but also has small size and easy integration, thereby having extremely high practical value in the field of magnetic field detection.
For the study of Magnetic Surface Acoustic Wave (MSAW) devices, Smole et al (p.smole, w.rule, c.korden, et al.magnetic tunable SAW-resonator [ C ]. IEEE International Frequency Control Symposium & PDA inhibition joint with the European Frequency & Time form. IEEE,2003,1-4) used ZnO as the piezoelectric material, FeCoSiB as the magnetically susceptible layer, single port resonators were prepared by sacrificial layer technology, achieving a large amount of Frequency shift, with a Frequency tuning up to-1.21% near 1.2 GHz. However, the application of low frequency and even direct current magnetic field is not discussed more, and the manufacturing process is complex and has poor repeatability. Liu et al (X.L.Liu, T.Bei, X.F.Yang, et al.Self-approximated vector magnetic sensor based on a Love-type surface-active wave sensor [ J ]. Applied Physics Letters,2018,113(8):082402) propose a resonance type sensor based on Love wave mode, which has a certain frequency response during low-frequency and even direct-current magnetic field detection, but has obvious hysteresis effect and is not beneficial to linear detection, and meanwhile, the maximum detection sensitivity is only 663.98 Hz/muT, which cannot meet the application requirement of high sensitivity. A resonant type MSAW device based on a contour model is provided by Li, Hui et al (M.Li, C.Dong, H.Chen, et al.ultra-sensitive NEMS magnetic sensor for picomagnetic field detection [ J ]. Applied Physics Letters,2017,110(14):143510), the sensor can realize the detection of low-frequency and even direct-current magnetic fields, the magnetic frequency shift amount reaches 3.19MHz, the sensitivity is as high as 2.8Hz/nT during the detection of the direct-current magnetic fields, but the high-sensitivity working point is near 12Oe, and the detection sensitivity df/dH near zero field is nearly zero. Wang et al (W.Wang, Y.Jea, X.Xue, et al.Grating-patterned surface acoustic wave device for sensing magnetic field [ J ]. AIP Advances,2018,8(1):015134) use a difference frequency structure to allow the sensor to achieve the purpose of suppressing temperature drift and other noises, wherein one sensor surface has a magnetostrictive film and the other surface has no magnetostrictive film or is replaced by other metals. However, this structure has the following two problems: firstly, the difference frequency structure can improve the magnetic field resolution by partially suppressing noise, but cannot improve the magnetic field sensitivity of the resonant type or delay line type MSAW sensor; second, the center frequency and frequency/phase temperature coefficient of the resonant type or delay line type MSAW sensor not covered with the magnetostrictive film are not equal to those of such a device covered with the magnetostrictive film, and therefore the temperature drift is not sufficiently suppressed by the difference frequency structure.
Disclosure of Invention
The invention aims to provide a high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic bias structure aiming at the defects in the background art, and the high-sensitivity surface acoustic wave vector magnetic field sensing system can be used for surface acoustic wave resonators and delay lines for magnetic field sensing and detection or magnetic field tuning.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic bias structure is shown in figure 1 and comprises a forward bias MSAW sensor, a reverse bias MSAW sensor and a mixer, wherein the forward bias MSAW sensor and the reverse bias MSAW sensor comprise an SAW resonator (1), an insulating layer (2), a magnetic sensitive layer (3) and an insulating passivation layer (6) which are sequentially arranged from bottom to top; wherein opposite bias fields are applied to the forward-biased MSAW sensor and the reverse-biased MSAW sensor.
Further, the bias field can be applied to the forward-bias MSAW sensor and the reverse-bias MSAW sensor by arranging an antiferromagnetic layer (4) between the magnetic sensitive layer (3) and the insulating passivation layer (6) or placing permanent magnets (5) with opposite polarities on two sides of the SAW resonator (1).
Further, the size of the applied bias field is adjusted, so that the forward bias MSAW sensor and the reverse bias MSAW sensor have the highest sensitivity under zero field.
Further, the SAW resonator comprises a piezoelectric single crystal and an interdigital electrode which are sequentially arranged; the piezoelectric single crystal is quartz single crystal or LiTaO3、LiNbO3The isobaric pressure monocrystal is 0.2-1 mm in thickness; the interdigital electrode is Cu or Al and the like, and the thickness is 50-150 nm.
Further, the insulating layer is SiO2、Al2O3、HfO2、TiO2Or ZnO, etc., with a thickness of 200-4000 nm.
Furthermore, the magnetic sensitive layer is an amorphous film such as FeSiB, FeSiBC, FeCoSiB, FeGaB and the like, and the thickness of the magnetic sensitive layer is 50-400 nm.
Further, the magnetic sensitive layer is an amorphous film/(permalloy/amorphous film)nN is a positive integer.
Further, the insulating passivation layer is SiO2、Al2O3、HfO2、TiO2Or ZnO, etc., with a thickness of 20 to 100 nm.
Furthermore, the antiferromagnetic layer is IrMn, FeMn and the like, and the thickness is 20-200 nm.
Furthermore, in the forward-bias MSAW sensor and the reverse-bias MSAW sensor, the magnetic sensitive layer is made of the same material and has the same thickness, so that the temperature drift can be effectively inhibited.
Furthermore, the SAW resonator is designed by adopting a Love wave mode, and has more obvious Young modulus effect than that excited by the traditional Rayleigh wave, thereby having higher magnetic field sensitivity.
The invention has the beneficial effects that:
1. the invention provides a magnetic bias structure-based height sensorA sensitive surface acoustic wave vector magnetic field sensing system adopts two MSAW sensors with opposite bias fields, and compared with a system consisting of a single MSAW sensor, the maximum frequency shift delta fmaxDoubled to 8MHz or above; the detection sensitivity df/dH is doubled, and reaches 1000kHz/Oe or above; the linear detection interval is shifted from 5Oe-15Oe to-5 Oe-5 Oe.
2. According to the high-sensitivity surface acoustic wave vector magnetic field sensing system based on the magnetic bias structure, two MSAW sensors with opposite bias fields are adopted, the materials and the thicknesses of the two sensors are the same, namely the central frequencies and the frequency/phase temperature coefficients of the two MSAW sensors are the same, so that the temperature drift can be further inhibited, and the high-sensitivity surface acoustic wave vector magnetic field sensing system has better temperature stability.
Drawings
FIG. 1 is a schematic diagram of an overall structure of a high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic bias structure provided by the present invention;
fig. 2 is a schematic structural diagram of applying a bias field (a) by using a ferromagnetic/antiferromagnetic exchange bias structure and applying a bias field (b) by using a permanent magnet bias structure in a high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic bias structure provided by the present invention;
FIG. 3 is a frequency shift curve of an easy axis (a) and a hard axis (b) of a single MSAW vector sensor under an unbiased field;
fig. 4 is a schematic frequency mixing diagram of a high-sensitivity magnetoelectric vector sensor based on a magnetic field bias structure provided by the invention.
Detailed Description
The technical scheme of the invention is detailed below by combining the accompanying drawings and the embodiment.
The invention provides a high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic bias structure, which has the following principle:
FIG. 3 is a frequency shift curve of an easy axis (a) and a hard axis (b) of a single MSAW vector sensor under an unbiased field; wherein, a single MSAW vector sensor comprises an SAW resonator (1) and SiO which are arranged from bottom to top in sequence2An insulating layer (2), a magnetically sensitive layer (3) of FeCoSiB/NiFe/FeCoSiB and SiO2An insulating passivation layer (6). As can be seen from fig. 3, the frequency shift curve along the easy axis direction in a single MSAW vector sensor is almost a horizontal straight line, i.e. the frequency does not change substantially with the change of the external magnetic field; and the frequency shift curve along the hard axis direction is a "w-type" curve that is axisymmetric with respect to H (magnetic field) ═ 0. The resonant frequency remains substantially constant as the magnetic field strength increases from 0Oe to 5 Oe. This is due to the SAW resonator surface relief and the interface periodic modulation. And the resonance frequency is suddenly reduced from 5Oe, the linearity of the part is very strong, the sensitivity is very high, the sensitivity of the device reaches up to 513.2kHz/Oe, and the linear range is 5Oe-15 Oe. And then continuing to improve the magnetic field intensity, wherein the resonant frequency of the device is continuously increased from the minimum value, and the change slope is gradually reduced, and the resonant frequency approaches to the maximum value 449Oe when the resonant frequency reaches about 100 Oe. And the Young modulus begins to decline along with the decline of magnetic field, and because "FeCoSiB/NiFe/FeCoSiB" sandwich structure, the hysteresis effect is little, so the coincidence degree of positive and negative direction test curve is very high, returns according to former curve trend basically. When the magnetic field reversely reaches-5 Oe, the frequency begins to decrease, the maximum sensitivity is between-5 Oe and-15 Oe, the linearity of the interval is very good, and the sensitivity is as high as 498 kHz/Oe. In conclusion, the single MSAW vector sensor has excellent vector sensing and very high sensitivity, the maximum frequency shift amount is 4MHz, the maximum detection sensitivity is about 500kHz/Oe, and the linear working interval is 5Oe to 15Oe or-5 Oe to-15 Oe. However, since the hard axis frequency shift curve of the single MSAW vector sensor is axisymmetric to H0, the sensitivity near the null field is almost zero, and magnetic field detection near the null field is difficult. Based on this, a bias magnetic field is applied in the hard axis direction, namely a ferromagnetic/antiferromagnetic exchange bias structure and a permanent magnet bias structure are introduced, the frequency shift curve can be shifted towards the left side or the right side at equal intervals from the zero field, the working point with the highest sensitivity is shifted to the vicinity of the zero field, and the sensitivity of the zero field is not zero any more at this moment, but the highest detection sensitivity is about 500 kHz/Oe.
On the basis, the invention adopts two MSAW sensors, applies bias magnetic fields with opposite directions on the hard axes of the two MSAW sensors, enables the frequency shift curve of the hard axis to translate towards the left side and the right side of the axis with equal distance of 0, and then mixes the output frequencies of the two sensors with positive and negative direction offset through a mixer so as to achieve the purposes of overlapping frequency shift quantity (the maximum frequency shift quantity reaches or exceeds 8MHz), improving the zero-field detection sensitivity (the detection sensitivity is about 1000kHz/Oe) of the sensors and expanding the linear working range (the linear detection interval is-5 Oe-5 Oe).
Example 1
A high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic field bias structure comprises a forward bias MSAW sensor, a reverse bias MSAW sensor and a mixer, wherein a bias field H from left to right is applied to the forward bias MSAW sensorBApplying a bias field H from right to left on the reverse biased MSAW sensorB. The positive bias MSAW sensor and the reverse bias MSAW sensor comprise an SAW resonator (1), an insulating layer (2), a magnetic sensitive layer (3), an antiferromagnetic layer (4) and an insulating passivation layer (6) which are sequentially arranged from bottom to top; the SAW resonator comprises piezoelectric single crystals and interdigital electrodes which are sequentially arranged, wherein the piezoelectric single crystals are ST-cut 90-degree X quartz single crystals, the interdigital electrodes are Al metal, the wavelength is 10 mu m, and the metallization rate is 0.5; the insulating layer is SiO2The interdigital electrode is used for isolating the interdigital electrode from other metal layers and is also used as a Love wave conduction layer, and the thickness of the interdigital electrode is 800 nm; the magnetic sensitive layer is FeCoSiB/NiFe/FeCoSiB, and the thickness is 105 nm; the antiferromagnetic layer is IrMn with a thickness of 50nm, and an induced magnetic field from left to right along the x-axis direction is required to be applied when preparing the ferromagnetic/antiferromagnetic film by adopting a top pinning mode, so as to obtain a bias magnetic field H in the direction shown in FIG. 2(a)BObtaining positive bias MSAW, and conversely, externally adding an induced magnetic field from right to left along the direction of the x axis to obtain reverse bias MSAW; the insulating passivation layer is SiO2And the thickness is 50 nm.
A manufacturing method of a high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic field bias structure specifically comprises the following steps:
step 1, selecting two ST-cut90 DEG X quartz single crystals, and photoetching interdigital electrodes on the two ST-cut90 DEG X quartz single crystals respectively to obtain two SAW resonators; the size of the SAW resonator is 2.4mm by 2mm, the line width of the interdigital electrode is 2.5 μm, and the thickness is 150 nm;
step 2, depositing a layer of SiO on the SAW resonator obtained in step 1 by adopting a magnetron sputtering method2An insulating layer; wherein the sputtering target has a diameter of
SiO of (2)2Target (purity 99.99%), sputtering pressure 0.3Pa, radio frequency power RF150W, thickness 800 nm;
3, depositing a 50nmFeCoSiB/5nmNiFe/50nmFeCoSiB magnetic sensitive layer on the insulating layer obtained in the step 2 by adopting direct current magnetron sputtering; wherein, when the FeCoSiB film is prepared, the diameter of the sputtering target material is
A FeCoSiB target with the purity of 99.5 percent, the sputtering air pressure of 0.2Pa and the power of DC 110W; when preparing the NiFe film, the sputtering target material has the diameter of
NiFe target with purity of 99.5%, sputtering pressure of 0.1Pa, radio frequency power of RF 28W; when preparing the magnetic sensitive layers on the two SAW resonators, applying induced magnetic fields with the size of 150Oe and opposite directions to correspond to a positive bias structure and a reverse bias structure;
step 4, depositing an IrMn antiferromagnetic layer on the magnetic sensitive layer by adopting a magnetron sputtering method under the inducing magnetic field in the step 3, wherein the sputtering power is 30W, the sputtering air pressure is 0.3Pa, and the thickness of the antiferromagnetic layer is 50 nm; because the directions of the induced magnetic fields are antiparallel, two MSAW sensors with the same bias field and opposite directions, namely MSAW sensors with opposite bias structures, can be obtained;
step 5, depositing SiO on the antiferromagnetic layer obtained in the step 4 by adopting a magnetron sputtering method2An insulating passivation layer; wherein the diameter of the sputtering target material is selected as
SiO with purity of 99.99%2The target had a sputtering gas pressure of 0.3Pa, a radio frequency power RF150W, and a thickness of 50 nm.
Fig. 4 is a schematic frequency mixing diagram of a high-sensitivity surface acoustic wave vector magnetic field sensor based on a magnetic field bias structure provided in the present invention. Due to the single MSAW vectorThe frequency shift curve of the quantity sensor is symmetrical about the axis H-0, as shown by the solid line symmetrical about the axis y in fig. 4; when MSAW sensor applies bias field HB>After 0, the frequency shift curve shifts to the right, where the output frequency is f1As indicated by the dashed line in the first quadrant of fig. 4. Similarly, if under the same deposition conditions, only the bias field H will be appliedBSet in opposite directions, i.e. with the addition of-H of equal size and opposite directionB<0, the frequency shift curve will shift the same distance to the left, and the output frequency is f2As indicated by the second quadrant dashed-dotted line in fig. 4. After mixing by the mixer, f is obtained by difference frequency calculationFrequency mixing＝f1-f2As shown by the solid line spanning the second and fourth quadrants of fig. 4. As can be seen from FIG. 4, the maximum frequency shift Δ f is compared to a system consisting of a single MSAW vector sensormaxDoubled to 8 MHz; the detection sensitivity df/dH is doubled, and reaches 1000 kHz/Oe; the linear detection interval is shifted from 5Oe-15Oe to-5 Oe-5 Oe.
Example 2
This example is different from example 1 in that: the positive bias MSAW sensor and the reverse bias MSAW sensor comprise an SAW resonator (1), an insulating layer (2), a magnetic sensitive layer (3) and an insulating passivation layer (6) which are sequentially arranged from bottom to top, permanent magnets (5) with opposite polarities are arranged on two sides of the SAW resonator (1), the permanent magnets are NbFeB, and a bias field H from left to right is obtained by adopting a placing mode shown in figure 2(b)BAnd then obtaining positive bias MSAW, and conversely, turning the directions of the positive electrode and the negative electrode to obtain reverse bias MSAW. In the manufacturing process, two permanent magnets with opposite polarities are adhered to two sides of a reflecting grid of an MSAW device, the two permanent magnets are prevented from being attracted and close to each other in an adhesion mode, two permanent magnets with opposite polarities are also adhered to two sides of the other MSAW device, and the magnetic directions of the two permanent magnets are opposite.
Claims (9)
1. A high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic bias structure is characterized by comprising a forward bias MSAW sensor, a reverse bias MSAW sensor and a mixer, wherein the forward bias MSAW sensor and the reverse bias MSAW sensor comprise an SAW resonator (1), an insulating layer (2), a magnetic sensitive layer (3) and an insulating passivation layer (6) which are sequentially arranged from bottom to top; wherein, opposite bias fields are applied on the forward bias MSAW sensor and the reverse bias MSAW sensor.
2. A high-sensitivity surface acoustic wave vector magnetic field sensing system based on a magnetic bias structure as claimed in claim 1, characterized in that the forward-bias MSAW sensor and the reverse-bias MSAW sensor apply bias fields in such a way that an antiferromagnetic layer (4) is arranged between the magnetic sensitive layer (3) and the insulating passivation layer (6) or permanent magnets (5) with opposite polarities are placed on both sides of the SAW resonator (1).
3. The high-sensitivity surface acoustic wave vector magnetic field sensing system based on the magnetic bias structure is characterized in that the SAW resonator comprises a piezoelectric single crystal and an interdigital electrode which are arranged in sequence; the piezoelectric single crystal is quartz single crystal or piezoelectric single crystal, and the thickness of the piezoelectric single crystal is 0.2-1 mm; the interdigital electrode is Cu or Al, and the thickness is 50-150 nm.
4. The high-sensitivity surface acoustic wave vector magnetic field sensing system based on the magnetic bias structure as claimed in claim 1, wherein the insulating layer is SiO2、Al2O3、HfO2、TiO2Or ZnO with a thickness of 200-4000 nm.
5. The high-sensitivity surface acoustic wave vector magnetic field sensing system based on the magnetic bias structure as claimed in claim 1, wherein the magnetic sensitive layer is an amorphous film of FeSiB, FeSiBC, FeCoSiB or FeGaB, and the thickness is 50-400 nm.
6. The high-sensitivity surface acoustic wave vector magnetic field sensing system based on the magnetic bias structure as claimed in claim 1, wherein the magnetic sensitive layer is amorphous film/(permalloy/amorphous film)nN is a positive integer.
7. The magnetically biased structure based high sensitivity acoustic surface of claim 1The wave vector magnetic field sensing system is characterized in that the insulating passivation layer is SiO2、Al2O3、HfO2、TiO2Or ZnO with a thickness of 20 to 100 nm.
8. The high-sensitivity surface acoustic wave vector magnetic field sensing system based on the magnetic bias structure is characterized in that the antiferromagnetic layer is IrMn or FeMn and the thickness is 20-200 nm.
9. The high-sensitivity surface acoustic wave vector magnetic field sensing system based on the magnetic bias structure is characterized in that in the forward-bias MSAW sensor and the reverse-bias MSAW sensor, the material and the thickness of the magnetic sensitive layer are the same.
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| CN116996057B (en) * | 2023-09-27 | 2024-05-03 | 江苏多维科技有限公司 | Proximity switch sensor and system for detecting rotation position |
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