CN114654109A - MEMS probe silicon wafer cutting method - Google Patents

MEMS probe silicon wafer cutting method Download PDF

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Publication number
CN114654109A
CN114654109A CN202210368523.6A CN202210368523A CN114654109A CN 114654109 A CN114654109 A CN 114654109A CN 202210368523 A CN202210368523 A CN 202210368523A CN 114654109 A CN114654109 A CN 114654109A
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Prior art keywords
silicon wafer
mems probe
light beams
cylindrical lens
distance
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CN202210368523.6A
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CN114654109B (en
Inventor
金永斌
贺涛
王强
丁宁
朱伟
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Suzhou Fatedi Technology Co ltd
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FTdevice Technology Suzhou Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Micromachines (AREA)

Abstract

The invention relates to a method for cutting an MEMS probe silicon wafer, which belongs to the technical field of semiconductor processing and precision instruments; firstly, adjusting the distance between a fixed point and a telescopic point in an x-direction equipartition support according to the distance between two adjacent connecting ribs in the x-direction in an MEMS probe silicon wafer and the distance between the fixed point and the first cross point of an intersecting type telescopic frame, and enabling an x-direction cylindrical lens to be positioned above the x-direction connecting ribs; then adjusting the distance between a fixed point and a telescopic point in the y-direction equipartition support according to the distance between two adjacent connecting ribs in the y-direction in the MEMS probe silicon wafer and the distance between the fixed point and the telescopic point of the cross-shear type telescopic frame, and enabling the y-direction column lens to be positioned above the y-direction connecting ribs; finally, the parallel light source emits parallel light beams, and all connecting ribs are cut synchronously; the invention not only can synchronously cut all the connecting ribs, but also can adapt to probes with different sizes, and the positions of the light beams are respectively adjusted in the x direction and the y direction.

Description

MEMS probe silicon wafer cutting method
Technical Field
The invention discloses a method for cutting an MEMS probe silicon wafer, belonging to the technical field of semiconductor processing and precision instruments.
Background
The probe card is a high-precision device for testing the bare chip by contacting the probe with the bonding pad of the bare chip. Under the background that the number of chips in a unit area of a wafer is continuously increased and the pin pitch of the chips is continuously reduced, the probe pitch on a probe card is also smaller and smaller. Conventional-sized probes have been unable to meet the small pitch chip test requirements, and with the development of Micro-Electro-Mechanical systems (MEMS), probe cards carrying MEMS probes have emerged.
At present, the MEMS probe is first processed into a structure connected by a connecting rib, which is called as a MEMS probe silicon wafer, as shown in fig. 1, and then laser cutting is performed to form individual MEMS probes, as shown in fig. 2.
Aiming at the technical requirement of cutting the MEMS probe silicon wafer, strong semiconductor (Shanghai) limited company discloses the invention patent of 'a 3DMEMS probe silicon wafer and a positioning and cutting device and method thereof', application No. 202111557382.4, the cutting of the MEMS probe silicon wafer is realized by two-dimensional movement of laser beams, and the mode has the advantage that no matter how the size of the MEMS probe on the MEMS probe silicon wafer is changed, the cutting of any size can be realized as long as the position of a connecting rib in a 2D distribution diagram of the MEMS probe can be identified. However, this method also has the disadvantage that it cannot be avoided, that is, the cutting mode of the connecting ribs is to cut one by one in sequence, and synchronous cutting cannot be achieved, so that this method is time-consuming.
If the connecting ribs can be cut synchronously, the time can be saved, and the working efficiency is improved; it is most easily conceivable to provide a plurality of laser beams to synchronously emit laser beams to realize synchronous cutting of the connecting ribs, however, how to adjust the relative positions of the laser beams for different sizes of MEMS probes is difficult to realize on the scale of MEMS probe size.
Disclosure of Invention
Aiming at the technical requirement of synchronous cutting of connecting ribs in an MEMS probe silicon wafer, the invention discloses an MEMS probe silicon wafer cutting method which can be used for synchronously cutting all the connecting ribs in the MEMS probe silicon wafer, greatly reducing the cutting time and improving the cutting efficiency, and can be suitable for MEMS probes with different sizes because the positions of cutting beams can be independently adjusted in the x direction and the y direction.
The purpose of the invention is realized as follows:
the MEMS probe silicon wafer cutting method comprises the following steps:
step a, according to the distance Dx between two adjacent connecting ribs in the x direction in the MEMS probe silicon wafer and the distance L1 between the fixed point of the cross-shear type telescopic frame and the first cross point, adjusting the distance L2x between the fixed point and the telescopic point in the x direction equipartition support, and meeting the following conditions: 4DX ^2+ L2x ^2=4L1^ 2;
b, enabling the x-direction cylindrical lens to be positioned above the x-direction connecting rib by the first two-dimensional horizontal movement mechanism;
step c, according to the distance Dy between two adjacent connecting ribs in the y direction of the MEMS probe silicon wafer, adjusting the distance L2y between a fixed point and a telescopic point in the y direction equipartition support according to the distance L1 between the fixed point of the cross-shear type telescopic support and a first cross point, and meeting the following conditions: 4DX ^2+ L2y ^2=4L1^ 2;
d, enabling the y-direction cylindrical lens to be positioned above the y-direction connecting rib by the second two-dimensional horizontal movement mechanism;
in the step a and the step c, 2 represents a square operation;
step e, the parallel light source emits parallel light beams, after the parallel light beams pass through the x-direction light beam converging mechanism, the light beams irradiated to the x-direction cylindrical lens converge in the x direction, and the light beams which are not irradiated to the x-direction cylindrical lens continue to be transmitted as the parallel light beams; after the x-direction converged light beams pass through the y-direction light beam converging mechanism, the light beams irradiated to the y-direction cylindrical lens converge in the y direction to form light spots, and the light beams not irradiated to the y-direction cylindrical lens continue to converge in the x direction to form x-direction light rays; after the parallel light beams pass through the y-direction light beam converging mechanism, light beams irradiating the y-direction cylindrical lens converge in the y direction to form y-direction light rays, and the light beams not irradiating the y-direction cylindrical lens are not spread in the parallel light beams; the light spot cuts all the connecting ribs synchronously.
In the MEMS probe silicon wafer cutting method, the execution sequence of the step a, the step b, the step c and the step d is replaced by the step a, the step b, the step d and the step c.
The MEMS probe silicon wafer cutting method is applied to an MEMS probe silicon wafer cutting device, and the MEMS probe silicon wafer cutting device comprises a parallel light source, an x-direction light beam converging mechanism and a y-direction light beam converging mechanism and is used for cutting the MEMS probe silicon wafer.
Has the advantages that:
firstly, in the MEMS probe silicon wafer cutting device, because a parallel light source is adopted, and an x-direction cylindrical lens and a y-direction cylindrical lens are arranged, and the distance between the x-direction cylindrical lens and the y-direction cylindrical lens is required to be the difference between the focal length of the x-direction cylindrical lens and the focal length of the y-direction cylindrical lens, the area light source can be changed into an array point light source, and further, the synchronous cutting of a plurality of connecting ribs is realized.
Secondly, in the MEMS probe silicon wafer cutting device, parallel light is automatically divided into light spots, x-direction light rays, y-direction light rays and parallel light rays, wherein the light spots with concentrated energy can just irradiate the connecting ribs, the connecting ribs are cut off by high energy, the x-direction light rays, the y-direction light rays and the parallel light rays irradiate the MEMS probe, and the MEMS probe cannot be cut and damaged due to the dispersed energy, and the light path is ingenious in design and does not need to independently process a non-cutting light source.
Thirdly, in the MEMS probe silicon wafer cutting device, the independent adjustment of the x-direction light beam and the y-direction light beam is realized due to the arrangement of the x-direction light beam converging mechanism and the y-direction light beam converging mechanism, so that the MEMS probe silicon wafer cutting device not only can adapt to MEMS probes with different sizes, but also can adapt to the condition that the distances between the x-direction connecting ribs and the y-direction connecting ribs are different.
Drawings
Fig. 1 is a plan view and a perspective view of a MEMS probe silicon wafer.
Fig. 2 is a plan view and a perspective view of a stand-alone MEMS probe.
FIG. 3 is a schematic diagram of the MEMS probe silicon wafer cutting device.
Fig. 4 is a schematic structural diagram of an x-direction beam converging mechanism.
Fig. 5 is a schematic structural diagram of a y-direction light beam converging mechanism.
Fig. 6 is a diagram of the optical path of the spots formed in the optical path of the present invention.
Fig. 7 is a diagram of the optical path of x-rays formed in the optical path of the present invention.
FIG. 8 is a diagram of the optical path of the y-ray formed in the optical path of the present invention.
Fig. 9 is a light path diagram of parallel light formed in the light path of the present invention.
FIG. 10 is a flow chart of the MEMS probe silicon wafer dicing method of the present invention.
In the figure: the device comprises a 1 parallel light source, a 2 x-direction light beam converging mechanism, a 2-1 x-direction cylindrical lens, a 2-2 x-direction equally-dividing support, a 3 y-direction light beam converging mechanism, a 3-1 y-direction cylindrical lens, a 3-2 y-direction equally-dividing support, a 4MEMS probe silicon chip, a 4-1 fixed point and a 4-2 telescopic point.
Detailed Description
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
Detailed description of the invention
The following is a specific embodiment of the MEMS probe silicon wafer dicing apparatus of the present invention.
The MEMS probe silicon wafer cutting apparatus in this embodiment includes a parallel light source 1, an x-direction light beam converging mechanism 2 and a y-direction light beam converging mechanism 3, and is configured to cut an MEMS probe silicon wafer 4, as shown in fig. 3;
the parallel light source 1 emits parallel light beams;
the x-direction light beam converging mechanism 2 comprises a plurality of x-direction cylindrical lenses 2-1 which are arranged in parallel, x-direction uniform distribution supports 2-2 which are arranged on two sides of the x-direction cylindrical lenses 2-1 and a first two-dimensional horizontal movement mechanism which is used for bearing the movement of the x-direction light beam converging mechanism 2, and is shown in fig. 4;
the y-direction light beam converging mechanism 3 comprises a plurality of y-direction cylindrical lenses 3-1 which are arranged in parallel, y-direction uniform distribution supports 3-2 which are arranged on two sides of the y-direction cylindrical lenses 3-1 and a second two-dimensional horizontal movement mechanism which is used for bearing the movement of the y-direction light beam converging mechanism 3, and is shown in fig. 5;
the distance between the x-direction cylindrical lens 2-1 and the y-direction cylindrical lens 3-1 is the difference between the focal length of the x-direction cylindrical lens 2-1 and the focal length of the y-direction cylindrical lens 3-1;
along the light propagation direction, parallel light beams emitted by the parallel light source 1 pass through the x-direction light beam converging mechanism 2, then light beams irradiated to the x-direction cylindrical lens 2-1 converge in the x direction, and light beams not irradiated to the x-direction cylindrical lens 2-1 continue to propagate as parallel light beams; after the x-direction converged light beams pass through the y-direction light beam converging mechanism 3, the light beams irradiated to the y-direction cylindrical lens 3-1 converge in the y direction to form light spots, and the light beams not irradiated to the y-direction cylindrical lens 3-1 continue to converge in the x direction to form x-direction light rays; after the parallel light beams pass through the y-direction light beam converging mechanism 3, light beams irradiating the y-direction cylindrical lens 3-1 converge in the y direction to form y-direction light rays, and the light beams not irradiating the y-direction cylindrical lens 3-1 are not spread in the parallel light beams; the light spot, the x-direction light and the y-direction light are coplanar with the MEMS probe silicon chip 4.
In the optical path, the optical path diagrams of the light spot, the x-direction light ray, the y-direction light ray and the parallel light are formed as shown in fig. 6, fig. 7, fig. 8 and fig. 9, respectively.
Detailed description of the invention
The following is a specific embodiment of the MEMS probe silicon wafer dicing apparatus of the present invention.
The MEMS probe silicon wafer dicing apparatus in this embodiment is further defined on the basis of the first embodiment: the x-direction uniform distribution support 2-2 and the y-direction uniform distribution support 3-2 are identical in structure and are both cross-shearing type telescopic frames, as shown in fig. 4 and 5.
Detailed description of the invention
The following is a specific embodiment of the MEMS probe silicon wafer dicing apparatus of the present invention.
The MEMS probe silicon wafer dicing apparatus according to the embodiment is further defined on the basis of the second embodiment: the cross-shearing type telescopic frame comprises a fixed point 4-1 and a telescopic point 4-2 which moves up and down, wherein the fixed point in the x-direction light beam converging mechanism 2 and the x-direction cylindrical lens 2-1 are positioned on the same horizontal plane, and the fixed point in the y-direction light beam converging mechanism 3 and the y-direction cylindrical lens 3-1 are positioned on the same horizontal plane.
By the aid of the structural design, when the telescopic point 4-2 moves up and down, the x-direction cylindrical lens 2-1 or the y-direction cylindrical lens 3-1 is kept still in a fixed horizontal plane, namely, the focal plane of the x-direction cylindrical lens 2-1 and the focal plane of the y-direction cylindrical lens 3-1 are fixed, and further, vertical moving mechanisms do not need to be arranged in the x-direction light beam converging mechanism 2 and the y-direction light beam converging mechanism 3, so that equipment cost is reduced.
Detailed description of the invention
The following is a specific embodiment of the MEMS probe silicon wafer dicing apparatus of the present invention.
The MEMS probe silicon wafer dicing apparatus according to the embodiment is further defined on the basis of the second embodiment: in the x-direction light beam converging mechanism 2, the fixed point 4-1 and the x-direction cylindrical lens 2-1 are arranged in an x-direction horizontal slideway; in the y-direction beam converging mechanism 3, the fixed point 4-1 and the y-direction cylindrical lens 3-1 are installed in a y-direction horizontal slide, as shown in fig. 4 and 5.
Due to the structural design, the cross-shear type telescopic frame can be prevented from being elastically deformed after being extended, the x-direction cylindrical lens 2-1 and the y-direction cylindrical lens 3-1 which are far away from the fixed point 4-1 are prevented from moving along the direction of an optical axis, the light spots are guaranteed to be focused accurately, and the connecting ribs are synchronous and can be successfully cut.
Detailed description of the invention
The following is a specific embodiment of the MEMS probe silicon wafer cutting method of the invention.
The MEMS probe silicon wafer cutting method according to the embodiment is applied to the MEMS probe silicon wafer cutting apparatus according to the third embodiment or the fourth embodiment, and the method has a flowchart as shown in fig. 10, and includes the following steps:
step a, according to the distance Dx between two adjacent connecting ribs in the x direction in the MEMS probe silicon chip 4 and the distance L1 between the fixed point of the cross-shear type telescopic frame and the first cross point, adjusting the distance L2x between the fixed point 4-1 and the telescopic point 4-2 in the x direction equipartition support 2-2, and meeting the following conditions: 4DX ^2+ L2x ^2=4L1^ 2;
b, enabling the x-direction cylindrical lens 2-1 to be located above the x-direction connecting rib by the first two-dimensional horizontal movement mechanism;
step c, according to the distance Dy between two adjacent connecting ribs in the y direction of the MEMS probe silicon chip 4, adjusting the distance L2y between a fixed point 4-1 and a telescopic point 4-2 in the y direction uniform distribution support 3-2 according to the distance L1 between the fixed point of the cross-shear type telescopic frame and a first cross point, and meeting the following conditions: 4DX ^2+ L2y ^2=4L1^ 2;
d, enabling the y-direction cylindrical lens 3-1 to be located above the y-direction connecting rib by the second two-dimensional horizontal movement mechanism;
in the step a and the step c, 2 represents a square operation;
step e, the parallel light source 1 emits parallel light beams, after the parallel light beams pass through the x-direction light beam converging mechanism 2, the light beams irradiated to the x-direction cylindrical lens 2-1 converge in the x direction, and the light beams which are not irradiated to the x-direction cylindrical lens 2-1 continue to be transmitted as the parallel light beams; after the x-direction converged light beams pass through the y-direction light beam converging mechanism 3, the light beams irradiated to the y-direction cylindrical lens 3-1 converge in the y direction to form light spots, and the light beams not irradiated to the y-direction cylindrical lens 3-1 continue to converge in the x direction to form x-direction light rays; after the parallel light beams pass through the y-direction light beam converging mechanism 3, light beams irradiating the y-direction cylindrical lens 3-1 converge in the y direction to form y-direction light rays, and the light beams not irradiating the y-direction cylindrical lens 3-1 are not spread in the parallel light beams; the light spot cuts all the connecting ribs synchronously.
Detailed description of the invention
The following is a specific embodiment of the MEMS probe silicon wafer cutting method of the invention.
The MEMS probe silicon wafer dicing method in this embodiment is further defined on the basis of the fifth embodiment: the execution sequence of the step a, the step b, the step c and the step d is replaced by the step a, the step b, the step d and the step c.
It should be noted that in the above embodiments, permutation and combination can be performed as long as there is no technical solution, and since a person skilled in the art can exhaust the results of all permutation and combination according to the mathematical knowledge of permutation and combination learned in high-school stages, these results are not listed in the present application, but it should be understood that each permutation and combination result is described in the present application.
It should be noted that the above embodiments are only illustrative for the patent, and do not limit the scope of protection of the patent, and those skilled in the art may make modifications to the parts thereof without departing from the spirit of the patent.

Claims (3)

  1. The MEMS probe silicon wafer cutting method is characterized by comprising the following steps:
    step a, adjusting the distance L2x between a fixed point (4-1) and a telescopic point (4-2) in an x-direction uniform distribution support (2-2) according to the distance Dx between two adjacent connecting ribs in the x direction of an MEMS probe silicon chip (4) and the distance L1 between the fixed point of a cross-shear type telescopic frame and a first cross point, and meeting the following conditions: 4DX ^2+ L2x ^2=4L1^ 2;
    b, enabling the x-direction cylindrical lens (2-1) to be located above the x-direction connecting rib by the first two-dimensional horizontal movement mechanism;
    step c, adjusting the distance L2y between the fixed point (4-1) and the telescopic point (4-2) in the y-direction uniform distribution support (3-2) according to the distance Dy between two adjacent connecting ribs in the y direction in the MEMS probe silicon chip (4) and the distance L1 between the fixed point of the cross-shear type telescopic frame and the first cross point, and meeting the following conditions: 4DX ^2+ L2y ^2=4L1^ 2;
    d, enabling the y-direction cylindrical lens (3-1) to be located above the y-direction connecting rib by the second two-dimensional horizontal movement mechanism;
    in the step a and the step c, 2 represents a square operation;
    step e, the parallel light source (1) emits parallel light beams, after the parallel light beams pass through the x-direction light beam converging mechanism (2), the light beams irradiated to the x-direction cylindrical lens (2-1) converge in the x direction, and the light beams which are not irradiated to the x-direction cylindrical lens (2-1) continue to propagate as the parallel light beams; after the x-direction convergent light beams pass through the y-direction light beam converging mechanism (3), the light beams irradiated to the y-direction cylindrical lens (3-1) converge in the y direction to form light spots, and the light beams which are not irradiated to the y-direction cylindrical lens (3-1) continue to converge in the x direction to form x-direction light rays; after the parallel light beams pass through the y-direction light beam converging mechanism (3), light beams irradiated to the y-direction cylindrical lens (3-1) converge in the y direction to form y-direction light rays, and the light beams which are not irradiated to the y-direction cylindrical lens (3-1) are parallel to spread; the light spot cuts all the connecting ribs synchronously.
  2. 2. The MEMS probe silicon wafer dicing method according to claim 1, wherein the execution sequence of the steps a, b, c and d is replaced by the steps a, b, d and c.
  3. 3. The MEMS probe silicon wafer cutting method according to claim 1 or 2, which is applied to an MEMS probe silicon wafer cutting device, wherein the MEMS probe silicon wafer cutting device comprises a parallel light source (1), an x-direction light beam converging mechanism (2) and a y-direction light beam converging mechanism (3) which are used for cutting the MEMS probe silicon wafer (4).
CN202210368523.6A 2022-04-09 2022-04-09 MEMS probe silicon wafer cutting method Active CN114654109B (en)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2673004Y (en) * 2004-01-12 2005-01-19 张绍辉 TV projector
TW200808479A (en) * 2006-08-09 2008-02-16 Uni Via Technology Inc laser beam splitting wafer system
CN102959685A (en) * 2011-05-18 2013-03-06 昭和光电株式会社 Fiber forwarding laser optical system
CN109352184A (en) * 2018-10-23 2019-02-19 深圳赛意法微电子有限公司 The beam splitting laser cutting method of silicon-based wafer
KR20200023150A (en) * 2018-08-24 2020-03-04 주식회사 에스디에이 Manufacturing method of MEMS probe tip by ultra high frequency laser and MEMS probe tip designed by same method
CN213135499U (en) * 2020-07-20 2021-05-07 莆田市益宏木业有限公司 Auxiliary device for laser welding machine
CN112828457A (en) * 2020-12-25 2021-05-25 程叔娥 Drill bit interval adjusting mechanism of slag removing device of laser cutting machine
CN114193001A (en) * 2021-12-19 2022-03-18 强一半导体(上海)有限公司 3DMEMS probe silicon chip and positioning and cutting device and method thereof

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2673004Y (en) * 2004-01-12 2005-01-19 张绍辉 TV projector
TW200808479A (en) * 2006-08-09 2008-02-16 Uni Via Technology Inc laser beam splitting wafer system
CN102959685A (en) * 2011-05-18 2013-03-06 昭和光电株式会社 Fiber forwarding laser optical system
KR20200023150A (en) * 2018-08-24 2020-03-04 주식회사 에스디에이 Manufacturing method of MEMS probe tip by ultra high frequency laser and MEMS probe tip designed by same method
CN109352184A (en) * 2018-10-23 2019-02-19 深圳赛意法微电子有限公司 The beam splitting laser cutting method of silicon-based wafer
CN213135499U (en) * 2020-07-20 2021-05-07 莆田市益宏木业有限公司 Auxiliary device for laser welding machine
CN112828457A (en) * 2020-12-25 2021-05-25 程叔娥 Drill bit interval adjusting mechanism of slag removing device of laser cutting machine
CN114193001A (en) * 2021-12-19 2022-03-18 强一半导体(上海)有限公司 3DMEMS probe silicon chip and positioning and cutting device and method thereof

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Address after: 215000 Suzhou Industrial Park, Suzhou City, Jiangsu Province, No. 200 Xingpu Road, 5 # 101, 102, 201, 202

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