CN114645256B - Device and method for reducing damage to silicon wafer substrate by sputtering coating - Google Patents
Device and method for reducing damage to silicon wafer substrate by sputtering coating Download PDFInfo
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- CN114645256B CN114645256B CN202210250332.XA CN202210250332A CN114645256B CN 114645256 B CN114645256 B CN 114645256B CN 202210250332 A CN202210250332 A CN 202210250332A CN 114645256 B CN114645256 B CN 114645256B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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Abstract
The invention relates to the technical field of vacuum coating, in particular to a device and a method for reducing the damage of a silicon wafer substrate by sputtering coating, and aims to solve the problems of poor film forming quality of a silicon wafer and reduced battery efficiency caused by oxidization and pollution of the back surface of the silicon wafer on a film forming carrier plate in the coating process. The device for reducing the damage of the silicon wafer substrate by sputtering coating provided by the invention comprises a base plate, a first connecting module and a second connecting module; the substrate is provided with a potential generator; when the substrate is positioned at the lower part of the film forming carrier plate, the substrate is taken as a first substrate; when the substrate is positioned on the upper part of the film forming carrier plate, the substrate is taken as a second substrate; the first connection module is used for controlling the potential generator to apply positive potential to the first substrate; the second connection module is used for controlling the potential generator to apply negative potential to the second substrate. The electric field is generated by controlling the potential generator, and the electric field is utilized to accelerate the plasma so as to bombard the back surface of the silicon wafer of the film forming carrier plate, so that the film forming quality of the silicon wafer is improved, and the battery efficiency is improved.
Description
Technical Field
The invention relates to the technical field of vacuum coating, in particular to a device and a method for reducing damage to a silicon wafer substrate by sputtering coating.
Background
Sputtering is a technique in which energetic particles are used to bombard the surface of a target in vacuum, and the bombarded particles are deposited on a substrate.
The sputtering coating device generally comprises a cavity, a target and a cathode plate, wherein the cavity encloses a vacuum coating cavity, the target and the cathode plate are positioned in the vacuum coating cavity, a film forming carrier plate placing area is arranged between the target and the vacuum coating cavity, and the film forming carrier plate placing area is used for placing a film forming carrier plate. In the sputtering coating process, the vacuum coating cavity is used as an anode plate to be grounded, and the cathode plate is connected to negative potential, so that an electric field is generated between the cathode plate and the vacuum coating cavity, and plasma is ionized to bombard a target material, thereby realizing the sputtering of the film forming carrier plate. The sputtering coating device is also provided with a magnetic pole group at one side of the cathode plate, and the plasma density is improved by utilizing the constraint of the magnetic field of the magnetic pole group on electrons so as to increase the sputtering rate.
In a sputter coating apparatus, a film-forming carrier is generally designed to be grounded. When the film-forming carrier plate is subjected to sputter coating, voltage drops exist between the cathode target material and the front and back surfaces of the film-forming carrier plate, and the sputter coating device is generally designed to be single-sided coating due to the difference of technological parameters of the front and back surfaces of the silicon wafer. If the film-forming carrier plate is coated, voltage drop exists between the cathode target material and the back surface of the film-forming carrier plate, so that the back surface of the film-forming carrier plate is bombarded by plasma in the film-forming process, oxidation and pollution of the back surface of a silicon wafer on the film-forming carrier plate are caused, the film-forming quality of the silicon wafer is affected, and further the efficiency of a battery is reduced.
Disclosure of Invention
The invention aims to provide a device and a method for reducing the damage of a silicon wafer substrate by sputtering coating, which are used for solving the problems of poor film forming quality of a silicon wafer and reduced battery efficiency caused by oxidization and pollution of the back surface of the silicon wafer on a film forming carrier plate in the coating process.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
the invention provides a device for reducing damage to a silicon wafer substrate by sputtering coating, which comprises a base plate, a first connecting module and a second connecting module; the substrate is provided with a potential generator, and an electrode feed-in connector is arranged in the potential generator; when the substrate is positioned at the lower part of the film forming carrier plate, the substrate is taken as a first substrate; when the substrate is positioned on the upper part of the film forming carrier plate, the substrate is taken as a second substrate;
the first connection module is used for connecting the control electrode feed-in connector with the positive potential of the external bias device so as to enable the potential generator to apply the positive potential to the first substrate;
the second connection module is used for controlling the electrode feed-in connector to be connected with negative potential of the external bias device so as to enable the potential generator to apply negative potential to the second substrate.
Further, the device for reducing the damage of the sputtering coating to the silicon wafer substrate further comprises a target position judging module;
the target position judging module is used for judging whether the target in the vacuum coating chamber is positioned at the upper part of the film forming carrier plate or not; after the target position judging module judges that the target in the vacuum coating chamber is positioned at the upper part of the film forming carrier plate, the first connecting module is started;
after the target position judging module judges that the target in the vacuum coating chamber is not positioned at the upper part of the film forming carrier plate, the second connecting module is started.
Further, the device for reducing the damage of the sputtering coating to the silicon wafer substrate further comprises an acquisition module, a film forming carrier plate position judging module, a potential starting module and a potential closing module;
the acquisition module is used for acquiring first position information and second position information of the film forming carrier plate;
the film forming carrier plate position judging module judges whether the film forming carrier plate is positioned in the vacuum film coating cavity or not according to the first position information and the second position information acquired by the acquisition module;
the potential starting module starts the potential generator after the film forming carrier plate position judging module judges that the film forming carrier plate is positioned in the vacuum film coating cavity so as to generate glow discharge between the substrate and the film forming carrier plate and finish the surface treatment of the silicon wafer on the film forming carrier plate;
and the potential closing module is used for closing the potential generator after the film forming carrier plate position judging module judges that the film forming carrier plate is not positioned in the vacuum film coating cavity.
Further, the potential starting module comprises a judging unit and a potential opening unit;
a judging unit for judging whether the voltage difference between the potential generator and the film forming carrier is within a set voltage range;
and the potential opening unit is used for controlling the potential generator to open the switch after the judging unit judges that the potential difference between the potential generator and the film forming carrier plate is within the set voltage range.
Further, the distance between the first substrate and the film-forming carrier plate is kept at 20-300 mm;
or alternatively, the first and second heat exchangers may be,
the distance between the second substrate and the film-forming carrier is kept at 20-300 mm.
In another aspect of the present invention, a method for reducing damage to a silicon wafer substrate by sputter coating is provided, and the device for reducing damage to a silicon wafer substrate by sputter coating includes the following steps:
when the film forming carrier plate is positioned in the vacuum film coating cavity, starting a potential generator so as to generate glow discharge between the substrate and the film forming carrier plate, and finishing the surface treatment of the silicon wafer on the film forming carrier plate, wherein the potential generator is arranged on the substrate;
if the film-forming carrier plate is not in the vacuum film-forming cavity, the potential generator is turned off.
Further, the method for reducing the damage of the sputtering coating to the silicon wafer substrate comprises the following steps before starting the potential generator:
judging whether a target in the vacuum coating chamber is positioned at the upper part of a film forming carrier plate or not;
if yes, the electrode feed-in connector is controlled to be connected with positive potential of the external bias device so that the potential generator applies positive potential to the first substrate, wherein the first substrate is positioned at the lower part of the film forming carrier plate, the potential generator is arranged on the first substrate, and the electrode feed-in connector is arranged in the potential generator;
if not, the control electrode feed-in connector is connected with the negative potential of the external bias device so that the potential generator applies the negative potential to the second substrate, wherein the second substrate is positioned on the upper part of the film forming carrier plate.
Further, judging whether the voltage difference between the potential generator and the film forming carrier plate is within a set voltage range;
if yes, the control potential generator switch is opened.
Further, temperature data of the film forming carrier plate are collected by using a temperature sensor, and the temperature data are sent to a processor;
judging whether the temperature of the film forming carrier plate exceeds a set temperature by using a processor according to the temperature data;
if not, keeping the potential generator to normally operate;
if yes, the operation of the potential generator is suspended.
Further, the computer readable medium is used to store execution instructions, which when executed by a processor of the memory controller, the memory controller performs the above method.
In summary, the technical effects achieved by the invention are as follows:
the device for reducing the damage of the silicon wafer substrate by sputtering coating provided by the invention comprises a base plate, a first connecting module and a second connecting module; the substrate is provided with a potential generator, and an electrode feed-in connector is arranged in the potential generator; when the substrate is positioned at the lower part of the film forming carrier plate, the substrate is taken as a first substrate; when the substrate is positioned on the upper part of the film forming carrier plate, the substrate is taken as a second substrate; the first connection module is used for connecting the control electrode feed-in connector with the positive potential of the external bias device so as to enable the potential generator to apply the positive potential to the first substrate; the second connection module is used for controlling the electrode feed-in connector to be connected with negative potential of the external bias device so as to enable the potential generator to apply negative potential to the second substrate.
The device for reducing the damage of the silicon wafer substrate by sputtering coating provided by the invention uses the first connecting module to control the electrode feed-in connector on the potential generator to be connected with the positive potential of the external bias device, so that the potential generator applies the positive potential to the first substrate; and controlling the electrode feed-in connector on the potential generator to be connected with the negative potential of the external bias device by using the second connecting module, so that the potential generator applies negative potential to the second substrate to pass through. Therefore, voltage difference is generated between the film forming carrier plate and the first substrate or voltage difference is generated between the film forming carrier plate and the second substrate, and further, the surface treatment is performed on the back surface of the silicon wafer while the magnetron sputtering is performed on one side of the silicon wafer of the film forming carrier plate, the plasma is accelerated by an electric field to bombard the back surface of the silicon wafer of the film forming carrier plate, the impurity gas in the back surface of the silicon wafer is excited to be released, and meanwhile, the back surface of the silicon wafer is activated, the effects of degassing and improving the binding force of a film are achieved, so that the back surface of the silicon wafer is prevented from being oxidized or polluted, and the purposes of improving the film forming quality of the silicon wafer and improving the efficiency of a battery are achieved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an apparatus for reducing damage to a silicon wafer substrate due to sputter coating according to an embodiment of the present invention;
FIG. 2 is a diagram showing the structural effect of an apparatus for reducing damage to a silicon wafer substrate by sputter coating according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a hardware structure according to a first embodiment of the present invention;
FIG. 4 is a schematic illustration of a film forming carrier plate with silicon wafers and/or monitor glass disposed thereon;
FIG. 5 is a schematic diagram of the main structure of a heterojunction cell;
fig. 6 is a flowchart of a method for reducing damage to a silicon wafer substrate by sputter coating according to a second embodiment of the present invention.
Icon: 201-target material; 202-pole groups; 203-a silicon wafer; 204-film forming carrier plate; 205-a first substrate; 206-a potential generator; 207-external biasing means; 208-vacuum coating chamber; 401-an acquisition module; 402, a film forming carrier plate position judging module; 403-a potential starting module; 404-a potential shutdown module; 501-a target position judging module; 502-a first connection module; 503-a second connection module; 801-n type monocrystalline silicon piece; 802-a first intrinsic amorphous silicon passivation layer; 803-phosphorus doped amorphous or microcrystalline silicon layer; 804-a second intrinsic amorphous silicon passivation layer; 805-boron doped amorphous or microcrystalline silicon layer; 806-a first TCO transparent conductive layer; 807-a second TCO transparent conductive layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Some embodiments of the present invention are described in detail below with reference to the accompanying drawings. The following embodiments and features of the embodiments may be combined with each other without conflict.
Embodiment one:
in the prior art, if the film forming carrier plate is coated, voltage drop exists between the cathode target material and the back surface of the film forming carrier plate, so that the back surface of the film forming carrier plate is bombarded by plasma in the film coating process, oxidation and pollution of the back surface of a silicon wafer on the film forming carrier plate are caused, the film forming quality of the silicon wafer is affected, and further the efficiency of a battery is reduced.
In view of this, the present invention provides a device for reducing damage to a silicon wafer substrate by sputter coating, which includes a substrate, a first connection module 502 and a second connection module 503; the substrate is provided with a potential generator 206, and an electrode feed-in connector is arranged in the potential generator 206; when the substrate is positioned at the lower part of the film forming carrier 204, the substrate is taken as a first substrate 205; when the substrate is positioned on the upper part of the film forming carrier 204, the substrate is taken as a second substrate; the first connection module 502 is used for connecting the control electrode feed-in connector with the positive potential of the external bias device 207, so that the potential generator 206 applies the positive potential to the first substrate 205; the second connection module 503 is configured to control the negative potential connection of the electrode feed-in connector and the external bias device 207, so that the potential generator 206 applies a negative potential to the second substrate.
The device for reducing the damage of the silicon wafer substrate by sputtering coating provided by the invention uses the first connection module 502 to control the electrode feed-in connector on the potential generator 206 to be connected with the positive potential of the external bias device 207, so that the potential generator 206 applies the positive potential to the first substrate 205; the second connection module 503 is used to control the electrode feed-in connector on the potential generator 206 to be connected with the negative potential of the external bias device 207, so that the potential generator 206 applies negative potential to the second substrate. Thereby generating a voltage difference between the film forming carrier 204 and the first substrate 205 or a voltage difference between the film forming carrier 204 and the second substrate, further realizing the surface treatment of the back surface of the silicon wafer 203 while performing magnetron sputtering on one surface of the silicon wafer 203 of the film forming carrier 204, accelerating the plasma by using an electric field to bombard the back surface of the silicon wafer 203 of the film forming carrier 204, exciting the release of impurity gas in the back surface of the silicon wafer 203, and simultaneously activating the back surface of the silicon wafer 203, thereby achieving the effects of degassing and improving the bonding force of a film layer, avoiding the back surface of the silicon wafer 203 from being oxidized or polluted, and achieving the purposes of improving the film forming quality of the silicon wafer 203 and improving the battery efficiency.
The structure and shape of the device for reducing the damage to the silicon wafer substrate by the sputter coating according to the present embodiment will be described in detail with reference to fig. 1 to 5.
In an alternative scheme of this embodiment, as shown in fig. 2, the device for reducing the damage of the silicon wafer substrate caused by sputtering coating further includes a target 201 and a vacuum coating chamber 208, and a magnetic pole group 202 is disposed in the target 201. A film forming carrier plate 204 movement area is reserved below the target 201, when the film forming carrier plate 204 is positioned in a vacuum film plating chamber 208, a plurality of silicon wafers 203 are placed on the film forming carrier plate 204, a first substrate 205 is arranged in the vacuum film plating chamber 208, a potential generator 206 is arranged in the first substrate 205, and the potential generator 206 can be connected with external deflection voltage through an electrode feed-in interface. In the vacuum coating chamber 208, the target 201 is connected with the cathode plate, the working voltage of the target 201 is about-250V, and the vacuum coating chamber 208 and the film forming carrier plate 204 are grounded and kept at zero potential. Therefore, in the vacuum coating process, the potential difference between the target 201 and the film-forming carrier 204 is about 250V, and if the film-forming carrier 204 is not in the vacuum coating chamber 208, the potential difference between the target 201 and the carrier is also about 250V. Since the film forming carrier 204 cannot completely cover the whole chamber plane, plasma generated during the sputtering process is sputtered not only to the front surface of the silicon wafer 203 on the film forming carrier 204, but also to the bottom of the film forming carrier 204 from the edge of the film forming carrier 204, and the back surface of the silicon wafer 203 on the film forming carrier 204 is sputtered, resulting in pollution and oxidation of the back surface of the silicon wafer 203. When the potential generator 206 in the first substrate 205 is connected with the positive potential of the external bias voltage, the first substrate 205 has a positive voltage, for the silicon wafer 203 on the film forming carrier 204, the front surface is an N surface, the back surface is a P surface, in the magnetron sputtering process, electrons on the P surface are gradually accumulated, so that the P surface keeps weak negative potential, therefore, the potential difference between the first substrate 205 and the film forming carrier 204 is not zero, the potential difference is equivalent to the effect that the PN junction in the silicon wafer 203 plays a forward bias, the plasmas between the two acts on the P surface of the silicon wafer 203 through the electric field effect and bombards the P surface of the silicon wafer 203 on the film forming carrier 204, the high-speed motion of the plasmas generates kinetic energy to impact the P surface of the silicon wafer 203, the energy conversion and the heating effect on the P surface are realized, the heated P surface releases gas which is taken away by a vacuum unit externally connected with the vacuum coating chamber 208, and the increased temperature increases the energy of adsorption atoms, and the adhesive force of the film layer can be improved.
In the vacuum magnetron sputtering process, each chamber is designed to be a single-sided coating for differences in process parameters of front-side coating and back-side coating of the silicon wafer 203. Because there may be a difference in the position of the target 201 in each vacuum coating chamber 208, the electrode feed interface on the potential generator 206 is connected to either a positive or negative potential of the external bias device 207 for different vacuum coating chamber 208 configurations.
In order to determine the position of the target 201, the apparatus for reducing damage to a silicon wafer substrate by sputter coating provided in this embodiment further includes a target position determining module 501, as shown in fig. 1, where the target position determining module 501 is connected to the first connection module 502 and the second connection module 503. After the target position judging module 501 judges that the target 201 in the vacuum coating chamber 208 is at the upper part of the film forming carrier plate 204, the first connecting module 502 is started, and the first connecting module 502 controls the electrode feed-in connector to be connected with the positive potential of the external bias device 207, so that the potential generator 206 applies the positive potential to the first substrate 205; after the target position determining module 501 determines that the target 201 in the vacuum coating chamber 208 is located at the lower portion of the film forming carrier 204, the second connecting module 503 is started, and the second connecting module 503 controls the electrode feed-in connector to be connected with the negative potential of the external bias device 207, so that the potential generator 206 applies the negative potential to the second substrate.
It is apparent that the second substrate is the same as the first substrate 205 in operation, and only the second substrate is located on the upper portion of the film formation carrier 204, and the potential generator 206 is connected to the negative potential of the external bias voltage, and the second substrate has a negative voltage.
Therefore, in this embodiment, a case where the first substrate 205 is used will be described in detail.
In an alternative scheme of this embodiment, a first infrared detector and a second infrared detector are disposed in each vacuum coating chamber 208, and the first position information and the second position information are respectively acquired by using the first infrared detector and the second infrared detector for the film forming carrier 204. Specifically, the first infrared detector is disposed at an inlet of the vacuum coating chamber 208, and the second infrared detector is disposed at an outlet of the vacuum coating chamber 208. The first infrared detector collects first position information of the film forming carrier plate 204, and the second infrared detector collects second position information of the film forming carrier plate 204, and whether the film forming carrier plate 204 is located in the vacuum coating chamber 208 is judged according to the first position information and the second position information. If at least one piece of position information shows that the film forming carrier plate 204 is in the vacuum film coating chamber 208, starting the potential generator 206 to generate glow discharge between the first substrate 205 and the film forming carrier plate 204, and finishing the surface treatment of the silicon wafer 203 on the film forming carrier plate 204; if both position information indicate that the film forming carrier 204 is not located in the vacuum coating chamber 208, the potential generator 206 is turned off, avoiding waste of the target 201.
In actual production, the film-forming carrier plates 204 are connected end to end in the vacuum coating chambers 208 and are designed in a chase plate mode, whereas in laboratory experiments, the length of each vacuum coating chamber 208 is about half the length of the film-forming carrier plates 204.
The film forming support 204 in this example is typically comprised of 4 x 6 vacancies in which the wafer 203 is placed, each of which can hold either the wafer 203 to be coated or the monitor glass, as shown in fig. 4. When the film forming carrier plate 204 enters the vacuum coating chamber 208, the first infrared detector at the inlet of the vacuum coating chamber 208 may detect the entering of the film forming carrier plate 204, and at this time, the second infrared detector at the outlet of the vacuum coating chamber 208 may not detect the film forming carrier plate 204.
Specifically, when the first position information collected by the first infrared detector and the second position information collected by the second infrared detector both show that the film forming carrier plate 204 is in the vacuum coating chamber 208, it indicates that the film forming carrier plate 204 is in the vacuum coating chamber 208; when the first position information collected by the first infrared detector shows that the film forming carrier plate 204 is in the vacuum coating chamber 208 and the second position information collected by the second infrared detector shows that the film forming carrier plate 204 is not in the vacuum coating chamber 208, the film forming carrier plate 204 is indicated to enter the vacuum coating chamber 208; when the first position information collected by the first infrared detector indicates that the film forming carrier plate 204 is not in the vacuum coating chamber 208 and the second position information detected by the second infrared detector indicates that the film forming carrier plate 204 is in the vacuum coating chamber 208, it indicates that the film forming carrier plate 204 is exiting from the vacuum coating chamber 208.
In an alternative scheme of this embodiment, the device for reducing the damage of the silicon wafer substrate caused by sputtering coating further includes a temperature sensor, the temperature sensor is used to collect temperature data of the film-forming carrier 204, and when the temperature data does not exceed the set temperature, the potential generator 206 is kept to operate normally; when the temperature data exceeds the set temperature, the operation of the potential generator 206 is suspended. Specifically, the set temperature was 230 ℃.
In this embodiment, the voltage difference between the potential generator 206 and the film formation carrier 204 is within a set range, and the voltage range is 20-50V. When the voltage difference is within the set voltage range, the control potential generator 206 switch is turned on; when the voltage difference is not within the set voltage range, the control potential generator 206 switches off. Because the voltage difference is within the set voltage range, the normal starting between the first substrate 205 and the film forming carrier 204 can be ensured, and the purposes of cleaning the back surface of the silicon wafer 203 on the film forming carrier 204 and heating are achieved. If the voltage difference is lower than 20V, the ignition between the first substrate 205 and the film-forming carrier 204 is weaker, the electron energy is smaller due to the lower voltage, and the gas ionization is less during the collision, so that the purpose of cleaning and deoxidizing the surface of the silicon wafer 203 cannot be achieved; if the voltage difference is higher than 50V, the voltage difference between the first substrate 205 and the film-forming carrier 204 is too large, which causes a plating around phenomenon, and contaminates the back surface of the silicon wafer 203, and at the same time, the voltage is high, and the collision excitation and ionization coexist, so that the linearity of the glow discharge voltammetric characteristic curve is poor.
In an alternative of this embodiment, the distance between the first substrate 205 and the film formation carrier 204 is kept between 20 and 300mm or the distance between the second substrate and the film formation carrier 204 is kept between 20 and 300mm. When the distance between the anode and the cathode is kept within the distance range, normal glow discharge between the first substrate 205 and the film formation carrier 204 can be ensured. If the distance between the first substrate 205 and the film-forming carrier 204 is less than 20mm, the distance between the two is in an aston dark region, in which the electrons just leave the cathode, the flight distance is short, and the energy obtained from the electric field is insufficient to excite the gas atoms, so that a glow effect is not generated. When the distance between the first substrate 205 and the film formation carrier 204 exceeds 300mm, the distance therebetween is set in a faraday dark region where electron energy is low, excitation or ionization does not occur, and normal glow discharge cannot be completed.
In an alternative scheme of this embodiment, the device for reducing the damage of the silicon wafer substrate caused by the sputtering coating further includes an acquisition module 401, a film forming carrier plate position judging module 402, a potential starting module 403 and a potential closing module 404. The acquisition module 401 is configured to acquire first position information and second position information of the film forming carrier 204; the film forming carrier plate position judging module 402 judges whether the film forming carrier plate 204 is positioned in the vacuum coating chamber 208 according to the first position information and the second position information acquired by the acquisition module 401; the potential starting module 403 is configured to start the potential generator 206 after the film forming carrier plate position determining module 402 determines that the film forming carrier plate 204 is in the vacuum coating chamber 208, so as to generate glow discharge between the substrate and the film forming carrier plate 204, and complete surface treatment of the silicon wafer 203 on the film forming carrier plate 204; the electric potential closing module 404 is configured to close the electric potential generator 206 after the film forming carrier position determining module 402 determines that the film forming carrier 204 is not in the vacuum coating chamber 208.
Further, the potential starting module 403 includes a judging unit and a potential opening unit. The judging unit is used for judging whether the voltage difference between the potential generator 206 and the film forming carrier 204 is within a set voltage range; the potential opening unit is configured to control the potential generator 206 to open the switch after the determining unit determines that the potential difference between the potential generator 206 and the film formation carrier 204 is within the set voltage range.
In an alternative scheme of this embodiment, the device for reducing the damage of the silicon wafer substrate caused by the sputtering coating further includes hardware and software. At the hardware level, in addition to the processor, the memory, the network interface, and the nonvolatile memory shown in fig. 3, other hardware may be included, such as a forwarding chip responsible for processing the packet. In the software layer, the device is formed by reading corresponding computer program instructions in a nonvolatile memory into a memory through a CPU of the device where the software is located and running.
Important steps in the heterojunction cell preparation process are described in detail below to make the description more detailed and clear.
As shown in fig. 5, the cleaned and textured silicon wafer 203 is sequentially deposited with a first intrinsic amorphous silicon passivation layer 802 and a phosphorus doped amorphous or microcrystalline silicon layer 803 on a first surface of an n-type monocrystalline silicon wafer 801 by a chemical vapor deposition method, and a second intrinsic amorphous silicon passivation layer 804 and a boron doped amorphous or microcrystalline silicon layer 805 are sequentially deposited on a second surface of the n-type monocrystalline silicon wafer 801; wherein, the deposition conditions of the first intrinsic amorphous silicon passivation layer 802 or the second intrinsic amorphous silicon passivation layer 804 are: the power of the power supply was 500W, and the gas flow ratio of hydrogen to silane (hydrogen dilution ratio) was 9.5:1, the pressure is 50pa, and the temperature of the substrate is 220 ℃ during deposition; the deposition conditions for the phosphorus doped amorphous or microcrystalline silicon layer 803 are: the power supply power is 400W, the gas flow ratio of hydrogen to silane (hydrogen dilution ratio) is 5.5:1, the gas flow ratio of phosphane to silane (phosphorus-silicon ratio) is 1:109, the pressure is 120pa, and the temperature of the substrate during deposition is 230 ℃; the deposition conditions for the boron doped amorphous or microcrystalline silicon layer 805 are: the power supply was 360W, the gas flow ratio of hydrogen to silane (hydrogen dilution ratio) was 2:1, the gas flow ratio of phosphine to silane (phosphorus silicon ratio) was 2:98, the pressure was 55pa, and the temperature of the substrate at the time of deposition was 205 ℃.
The silicon wafer 203 after chemical vapor deposition is used for depositing a TCO film by using a magnetron sputtering coating device, argon and oxygen are introduced under the condition of room temperature, the gas flow ratio of the argon to the oxygen is set to 55:1, the cavity pressure is kept to be 0.35Pa, a sputtering power supply is turned on, the power density of the power supply is 4KW/m, and a magnetron sputtering method is adopted for depositing the first TCO transparent conductive layer 806 on the phosphorus doped amorphous or microcrystalline silicon layer 803; on the other side of the cell, the second TCO transparent conductive layer 807 is deposited on the phosphorus doped amorphous or microcrystalline silicon layer 803 using the same magnetron sputtering parameters, the thickness of the first TCO transparent conductive layer 806 being anywhere between 50 and 100 nanometers and the thickness of the second TCO transparent conductive layer 807 being anywhere between 50 and 100 nanometers.
The silicon wafer 203 after magnetron sputtering is put into a plasma processing device to perform argon or oxygen plasma processing on the first TCO transparent conductive layer 806806 and the second TCO transparent conductive layer 807807, wherein the power density of argon plasma is 50-200W/m2, the processing time is 20-300S, and the time and the power setting of the argon or oxygen plasma processing on the first TCO transparent conductive layer 806806 and the second TCO transparent conductive layer 807807 can be the same or different.
The working principle of the device for reducing the damage of the silicon wafer substrate by sputtering coating provided by the embodiment is as follows:
the first infrared detector and the second infrared detector are used for respectively acquiring the first position information and the second position information of the film forming carrier plate 204, the first position information and the second position information acquired by the acquisition module 401 are used for judging whether the film forming carrier plate 204 is positioned in the vacuum film coating chamber 208 or not according to the acquired first position information and second position information by the film forming carrier plate position judgment module 402, and when at least one position information shows that the film forming carrier plate 204 is positioned in the vacuum film coating chamber 208, the potential generator 206 is started.
Before the potential generator 206 is started, the target position determining module 501 determines whether the target 201 is above the film forming carrier 204. After the target position judging module 501 judges that the target 201 in the vacuum coating chamber 208 is at the upper part of the film forming carrier plate 204, the first connecting module 502 is started, and the first connecting module 502 controls the electrode feed-in connector to be connected with the positive potential of the external bias device 207, so that the potential generator 206 applies the positive potential to the first substrate 205; after the target position determining module 501 determines that the target 201 in the vacuum coating chamber 208 is located at the lower portion of the film forming carrier 204, the second connecting module 503 is started, and the second connecting module 503 controls the electrode feed-in connector to be connected with the negative potential of the external bias device 207, so that the potential generator 206 applies the negative potential to the second substrate.
When the electrode feed-in connector is connected with the external bias device 207 and the film forming carrier 204 is in the vacuum film forming chamber 208, the potential generator 206 is activated. At this time, the judging unit judges the voltage difference between the potential generator 206 and the film formation carrier 204, and when the voltage difference is within the set voltage range, the potential opening unit controls the switch of the potential generator 206 to be opened, and starts to perform surface treatment on the silicon wafer 203 on the film formation carrier 204.
When the processor receives that the temperature of the film forming carrier plate 204 acquired by the temperature sensor exceeds the set value, the potential closing module 404 is controlled to stop the operation of the potential generator 206.
The invention can perform magnetron sputtering on the front surface of the silicon wafer 203 of the film forming carrier plate 204, and simultaneously perform surface treatment on the back surface of the silicon wafer 203 due to the potential difference between the first substrate 205 and the carrier plate and glow effect in the period, and the invention accelerates the bombardment treatment on the back surface of the silicon wafer 203 by utilizing the action of an electric field to accelerate the plasma, so as to excite the release of impurity gas in the back surface of the silicon wafer 203 and activate the back surface of the silicon wafer 203, thereby achieving the effects of degassing and improving the film forming quality of the silicon wafer 203 and improving the battery efficiency.
In addition, when the film carrier 204 is not in the vacuum coating chamber 208, the control switch of the potential generator 206 can be directly turned off, so that the waste of the target 201 is avoided.
Embodiment two:
the method for reducing the damage of the silicon wafer substrate by sputtering coating provided in the embodiment is as follows, as shown in fig. 6, and includes the following steps:
s100: the first and second position information are acquired for the film formation carrier 204 using the first and second infrared detectors, respectively.
S200: the acquisition module 401 acquires the first position information and the second position information and sends the first position information and the second position information to the film forming carrier plate position judgment module 402.
S300: the film forming carrier position determining module 402 determines whether the film forming carrier 204 is in the vacuum coating chamber 208, and if so, the process goes to step S400.
S400: judging whether the position of the target 201 in the vacuum coating chamber 208 is at the upper part of the film forming carrier 204, if yes, turning to step S401; if not, go to step S402.
S401: the first connection module 502 is started, the control electrode feed-in connector is connected with the positive potential of the external bias device 207, and the process goes to step S500.
S402: the second connection module 503 is started, the control electrode feed-in connector is connected to the negative potential of the external bias device 207, and the process goes to step S500.
S500: the judging unit judges whether the voltage between the potential generator 206 and the film formation carrier 204 is within a set range, and if so, the potential opening unit controls the potential generator 206 to switch on and starts to perform surface treatment on the back surface of the silicon wafer 203.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (10)
1. The device for reducing the damage of the silicon wafer substrate by the sputtering coating is characterized by comprising a target (201), a base plate, a first connecting module (502) and a second connecting module (503);
the silicon wafer (203) is placed on the film forming carrier plate (204), the front surface of the silicon wafer (203) is an N surface, the back surface of the silicon wafer is a P surface, and the front surface of the silicon wafer (203) faces upwards;
the substrate is provided with a potential generator (206), and an electrode feed-in connector is arranged in the potential generator (206);
the target (201) is positioned above the film forming carrier plate (204), and when the substrate is positioned at the lower part of the film forming carrier plate (204), the substrate is taken as a first substrate (205);
the target (201) is positioned below the film forming carrier plate (204), and when the substrate is positioned at the upper part of the film forming carrier plate (204), the substrate is used as a second substrate;
the first connection module (502) is used for controlling positive potential connection of the electrode feed-in connector and an external bias device (207) so that the potential generator (206) applies positive potential to the first substrate (205) and the PN junction of the silicon wafer (203) generates forward bias;
the second connection module (503) is used for controlling the negative potential connection between the electrode feed-in connector and the external bias device (207), so that the potential generator (206) applies negative potential to the second substrate, and the PN junction of the silicon wafer (203) generates forward bias.
2. The device for reducing damage to a silicon wafer substrate by sputter coating according to claim 1, further comprising a target position judging module (501);
the target position judging module (501) is used for judging whether a target (201) in the vacuum coating cavity (208) is positioned at the upper part of the film forming carrier plate (204); after the target position judging module (501) judges that the target (201) in the vacuum coating chamber (208) is positioned at the upper part of the film forming carrier plate (204), the first connecting module (502) is started;
after the target position judging module (501) judges that the target (201) in the vacuum coating chamber (208) is not positioned at the upper part of the film forming carrier plate (204), the second connecting module (503) is started.
3. The device for reducing sputter coating damage to a silicon wafer substrate according to claim 2, further comprising an acquisition module (401), a film forming carrier position judgment module (402), a potential starting module (403) and a potential closing module (404);
the acquisition module (401) is used for acquiring first position information and second position information of the film forming carrier plate (204);
the film forming carrier plate position judging module (402) judges whether the film forming carrier plate (204) is positioned in the vacuum coating chamber (208) according to the first position information and the second position information acquired by the acquisition module (401);
the potential starting module (403) starts the potential generator (206) after the film forming carrier plate position judging module (402) judges that the film forming carrier plate (204) is positioned in the vacuum film coating chamber (208), so that glow discharge is generated between the substrate and the film forming carrier plate (204), and surface treatment of the silicon wafer (203) on the film forming carrier plate (204) is completed;
the potential closing module (404) closes the potential generator (206) after the film forming carrier plate position judging module (402) judges that the film forming carrier plate (204) is not positioned in the vacuum coating chamber (208).
4. The apparatus for reducing damage to a silicon wafer substrate by sputter coating according to claim 3,
the potential starting module (403) comprises a judging unit and a potential opening unit;
the judging unit judges whether the voltage difference between the potential generator (206) and the film forming carrier plate (204) is within a set voltage range;
the potential opening unit controls the potential generator (206) to open a switch after the judging unit judges that the potential difference between the potential generator (206) and the film forming carrier plate (204) is within a set voltage range.
5. The apparatus for reducing damage to a silicon wafer substrate by sputter coating according to claim 4,
the distance between the first substrate (205) and the film-forming carrier plate (204) is kept between 20 and 300mm;
or alternatively, the first and second heat exchangers may be,
the distance between the second substrate and the film-forming carrier plate (204) is kept at 20-300 mm.
6. A method for reducing damage to a silicon wafer substrate by sputter coating, using the apparatus for reducing damage to a silicon wafer substrate by sputter coating according to claim 5, comprising the steps of:
when the film forming carrier plate (204) is positioned in the vacuum film plating chamber (208), starting the potential generator (206) so as to generate glow discharge between the substrate and the film forming carrier plate (204) to finish the surface treatment of the silicon wafer (203) on the film forming carrier plate (204), wherein the substrate is provided with the potential generator (206);
and if the film forming carrier plate (204) is not positioned in the vacuum film coating chamber (208), closing the potential generator (206).
7. The method for reducing damage to a silicon wafer substrate by sputter coating according to claim 6, wherein,
before starting the potential generator (206), comprising the steps of:
judging whether the target (201) in the vacuum coating chamber (208) is positioned at the upper part of the film forming carrier plate (204);
if yes, controlling the positive potential connection of the electrode feed-in connector and the external bias device (207) so as to enable the potential generator (206) to apply positive potential to the first substrate (205), wherein the first substrate (205) is positioned at the lower part of the film forming carrier plate (204), the potential generator (206) is mounted on the first substrate (205), and the electrode feed-in connector is arranged inside the potential generator (206);
if not, controlling the negative potential connection of the electrode feed-in connector and the external bias device (207) so as to enable the potential generator (206) to apply negative potential to the second substrate, wherein the second substrate is positioned on the upper part of the film forming carrier plate (204).
8. The method for reducing damage to a silicon wafer substrate by sputter coating according to claim 7,
judging whether the voltage difference between the potential generator (206) and the film forming carrier plate (204) is within a set voltage range;
if yes, the switch of the potential generator (206) is controlled to be opened.
9. The method for reducing damage to a silicon wafer substrate by sputter coating according to claim 8,
acquiring temperature data of the film forming carrier plate (204) by using a temperature sensor, and sending the temperature data to a processor;
judging whether the temperature of the film forming carrier plate (204) exceeds a set temperature or not according to the temperature data by using the processor;
if not, keeping the potential generator (206) operating normally;
if so, the operation of the potential generator (206) is suspended.
10. The method of reducing sputter coating damage to a silicon wafer substrate according to claim 9, characterized in that the computer readable medium is used to store execution instructions which, when executed by a processor of a memory controller, perform the method of any of the preceding claims 6 to 9.
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