WO2023240682A1

WO2023240682A1 - Target material in-situ monitoring method and system, and computer device and storage medium

Info

Publication number: WO2023240682A1
Application number: PCT/CN2022/101870
Authority: WO
Inventors: 张冲
Original assignee: 长鑫存储技术有限公司
Priority date: 2022-06-16
Filing date: 2022-06-28
Publication date: 2023-12-21
Also published as: CN117305793A

Abstract

The present disclosure relates to a target material in-situ monitoring method and system, and a computer device and a storage medium. A correspondence between voltage and current parameters collected when a target material and a sputtering device are cooperatively used for the first time and the thickness of the target material is recorded, and a monitoring feedback mechanism is established. The target material in-situ monitoring method comprises: establishing a self-checking program in a sputtering device, wherein the self-checking program comprises a plurality of deposition stages, which are performed in sequence, and sputtering powers for the plurality of deposition stages are different from one another; and in the process of a target material and the sputtering device being used cooperatively, when the thickness of the target material needs to be measured, starting the sputtering device to execute the self-checking program, and after voltage and current parameters for the plurality of deposition stages are respectively acquired, determining the thickness of the target material on the basis of the voltage and current parameters for the plurality of deposition stages and a correspondence between the voltage and current parameters and the thickness of the target material.

Description

Target in-situ monitoring method, system, computer equipment and storage medium

Cross-references to related applications

This disclosure claims priority from a Chinese patent application with application number 202210680415.2 filed with the China Patent Office on June 16, 2022, the entire contents of which are incorporated into this disclosure by reference.

Technical field

The present disclosure relates to the field of magnetron sputtering technology, and in particular to target in-situ monitoring methods, systems, computer equipment and storage media.

Background technique

Magnetron sputtering is a type of physical vapor deposition (PVD) and one of the most widely used thin film deposition methods in the field of semiconductor chip preparation. Its basic principle is to use an electric field to ionize large-mass gas molecules such as Ar, Kr, and Xe under high vacuum. After the cations are accelerated by the electric field, they bombard the target atoms onto the wafer and accumulate to form a thin film. Magnetron sputtering introduces a magnetic field to the cathode target surface and uses the magnetic field to bind charged particles to increase the ionization rate (i.e., the density of the plasma) to increase the deposition rate.

In the magnetron sputtering system, the method of using the target material is a key factor that directly affects the quality of the deposited film. As the sputtering process continues, the target material will gradually become thinner under the bombardment of plasma until it is penetrated. Therefore, in order to maintain process stability, the target material needs to be replaced before the target material is penetrated during use. Replacement too early will cause target material waste and increase coating costs; replacement too late will risk target material breakdown and backplane material contamination of the wafer or cavity. Therefore, it is very necessary to effectively monitor the target thickness in the magnetron sputtering system.

Contents of the invention

Based on this, it is necessary to overcome the shortcomings of the existing technology and provide a target in-situ monitoring method, system, computer equipment and storage medium, which can regularly monitor the target, prevent target breakdown, and improve target utilization. Ensure the stability of the coating system, thereby improving production efficiency.

The technical solution is as follows: a target in-situ monitoring method, which includes:

Establishing a self-test program in the sputtering equipment, the self-test program includes multiple deposition stages performed in sequence, and the sputtering power of the multiple deposition stages is different from each other;

During the cooperative use of the target material and the sputtering equipment, when it is necessary to detect the thickness of the target material, the sputtering equipment is started to execute the self-test program, and after obtaining multiple After the voltage and current parameters of the deposition stage are determined, the thickness of the target material is determined based on the multiple voltage and current parameters of the deposition stage and the corresponding relationship between the voltage and current parameters and the thickness of the target material.

In one embodiment, the method for obtaining the corresponding relationship between the voltage and current parameters and the thickness of the target includes: when the target and the sputtering equipment are used together for the first time, starting the sputtering equipment and performing the self-test. The program performs sputtering treatment on the target material; when the thickness loss degree of the target material is within the first setting range, the voltage and current parameters and the thickness of the target material during the execution of the self-test program are obtained to obtain the voltage and current Correspondence between parameters and target thickness.

In one embodiment, during the cooperative use of the target material and the sputtering equipment, when the thickness loss of the target material is within a first preset range, the sputtering equipment is started to execute the Self-test procedure.

In one embodiment, the first preset range is no less than 70%, and/or no more than 95%.

In one embodiment, when the thickness loss of the target material is within a first preset range, the sputtering equipment is started every first set time to perform the self-test procedure; and/or, according to the preset Set the time to start the sputtering equipment to perform the self-test program; and/or start the sputtering equipment multiple times to perform the self-test program.

In one embodiment, when the thickness loss of the target material is greater than the first preset range, the wafer is prevented from entering the process chamber of the sputtering equipment for sputtering processing.

In one embodiment, when the thickness loss degree of the target material is within a second preset range, and the second preset range is greater than the first preset range and not greater than 97%, the target material is Carry out at least one adhesion treatment until the thickness loss of the target material reaches 97%.

In one embodiment, when the thickness loss degree of the target material is within a third preset range, and the third preset range is greater than 97%, the target material is scrapped.

In one embodiment, when the thickness loss degree of the target material is within a third preset range, and the third preset range is greater than the second preset range, a prompting action is performed.

In one embodiment, the sputtering power of multiple deposition stages increases or decreases sequentially.

In one embodiment, the difference in sputtering power between two adjacent deposition stages is no less than 50 W.

In one embodiment, the number of deposition stages is at least 5.

In one embodiment, during multiple deposition stages, the air pressure inside the process chamber of the sputtering equipment remains consistent.

In one embodiment, the self-test procedure further includes a stabilizing gas pressure phase before multiple deposition phases. During the stabilizing gas pressure phase, an inert gas is introduced into the process chamber of the sputtering equipment, And make the air pressure of the process chamber reach a stable state.

In one embodiment, the air pressure range of the stable air pressure stage is 1mtorr-10mtorr; the time of the stable air pressure stage is no more than 10S.

In one of the embodiments, the self-test program further includes an ignition and ignition stage located before multiple deposition stages, and the ignition and ignition stage is located after the stable air pressure stage; during the ignition and ignition stage, Turn on the DC voltage or radio frequency voltage, and the target material starts sputtering processing; the time of the ignition and ignition stage is controlled to 1S-3S.

A target in-situ monitoring system, the target in-situ monitoring system includes:

A self-test program establishment module is used to establish a self-test program in the sputtering equipment; wherein the self-test program includes multiple deposition stages performed in sequence, and the sputtering power of the multiple deposition stages interacts with each other. Are not the same;

A data acquisition module, the data acquisition module is used to respectively collect voltage and current parameters of multiple deposition stages during the execution of the self-test program by the sputtering equipment;

A calculation module, the calculation module is used to determine the thickness of the target material according to the voltage and current parameters of the plurality of deposition stages and the corresponding relationship between the voltage and current parameters and the thickness of the target material.

In one embodiment, the target in-situ monitoring system also includes a correspondence acquisition module, which is used to obtain the sputtering information when the target and the sputtering equipment are used together for the first time. During the sputtering process of the target material by executing the self-test program, the equipment obtains the voltage and current parameters and the thickness of the target material, and obtains the corresponding relationship between the voltage and current parameters and the thickness of the target material.

In one embodiment, the target in-situ monitoring system further includes a supply stop module, which is used to prevent the crystal from being stopped when the thickness loss of the target is greater than the first preset range. The circle enters the process chamber of the sputtering equipment for sputtering treatment.

In one embodiment, the target in-situ monitoring system further includes an adhesion processing module. The adhesion processing module is configured to: when the thickness loss degree of the target reaches a second preset range, the second preset If the range is greater than the first preset range and not greater than 97%, the target material is subjected to at least one adhesion treatment until the thickness loss of the target material reaches 97%.

In one embodiment, the target in-situ monitoring system further includes a scrapping module. The scrapping module is used to set the thickness loss of the target to a third preset range. When it is greater than 97%, the target material will be scrapped.

In one embodiment, the target in-situ monitoring system further includes a prompt module, the prompt module is used to when the thickness loss degree of the target reaches a third preset range, the third preset range When it is greater than the second preset range, a prompt action is performed.

A computer device includes a memory and a processor. The memory stores a computer program. The processor implements the steps of the method when executing the computer program.

A computer-readable storage medium has a computer program stored thereon, and when the computer program is executed by a processor, the steps of the method are implemented.

The above-mentioned target in-situ monitoring method, system, computer equipment and storage medium run the self-test program. The system will compare the current and voltage under specific power and pressure with the collected data to determine the remaining thickness of the target on its own, that is, , obtain the current and voltage parameters at different deposition stages, and combine them with their corresponding relationships with the target thickness to obtain the thickness of the target. The work efficiency is high and there is no need to take the target out of the process chamber; at the same time, the detection results are more accurate. In addition, in this disclosure, since the sputtering powers of multiple deposition stages are different from each other, that is, whether the detection data of voltage and current are abnormal under multiple sputtering powers, the purpose is to eliminate or reduce the problem caused by the sputtering equipment itself. The data offset generated during the process avoids misjudgments in the sputtering equipment, thereby making the detection data more authentic and reliable, which is conducive to the stability of the process, and can improve the target utilization rate on the premise of preventing target breakdown.

Description of the drawings

The accompanying drawings that form a part of the present disclosure are used to provide a further understanding of the present disclosure. The illustrative embodiments of the present disclosure and their descriptions are used to explain the present disclosure and do not constitute an improper limitation of the present disclosure.

In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without exerting creative efforts.

Figure 1 is a schematic flow chart of a target in-situ monitoring method according to an embodiment of the present disclosure;

Figure 2 is a schematic flowchart of a target in-situ monitoring method according to another embodiment of the present disclosure.

Detailed ways

In order to make the above objects, features and advantages of the present disclosure more obvious and understandable, specific implementation modes of the present disclosure will be described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, the present disclosure can be implemented in many other ways than those described here, and those skilled in the art can make similar improvements without violating the connotation of the present disclosure. Therefore, the present disclosure is not limited by the specific embodiments disclosed below.

After summarizing and analyzing the traditional target thickness monitoring methods, the applicant found that the traditional target thickness monitoring methods are mainly achieved through the following methods:

1) The first method: After the vacuum is broken in the process chamber of the sputtering equipment, take the target out of the process chamber and measure the thickness using visual inspection, calipers or ultrasonic methods. This method can directly monitor the remaining thickness of the target, but this requires switching the sputtering equipment from vacuum to atmosphere, which increases time costs and greatly reduces production efficiency. At the same time, the target is easily contaminated by oxygen and water vapor in the air, affecting process stability. .

2) The second method: Compare the amount of kilowatt-hours used in the sputtering process (i.e., the product of power and time) with the factory life of the target (i.e., the total kilowatt-hours), and calculate the remaining amount that can be used. The target life is generally an empirical value and will be calibrated when this type of target is used for the first time. This method can monitor the remaining thickness of the target without breaking the vacuum, and it is also a commonly used method at present. However, on the one hand, the target etching rate depends not only on the sputtering power and time, but also on other factors such as gas flow. There is no guarantee that every sputtering process can accurately monitor the remaining life of the target; on the other hand, update The usage of the target needs to be reset to 0. You may forget to reset it, resulting in waste of the target. There may even be cases where the target is mistakenly reset to 0 without replacing the target. This can easily cause the target to penetrate and contaminate the wafer and cavity, increasing the number of target materials. Cost of manual errors.

3) The third method: When the target is used for the first time, establish a standard test program. In this program, the sputtering power and gas pressure are set to fixed values. When DC sputtering is used, since the target material, gas pressure, target distance, and sputtering power are all fixed values, only the magnetic field intensity affects the current and voltage. The greater the magnetic field intensity on the target surface, the greater the plasma density, the corresponding lower the sputtering voltage, and the greater the current. As DC sputtering continues, the target surface is corroded and the thickness becomes thinner. The magnetic field intensity on the target surface is getting closer and closer to the permanent magnet located behind the target, that is, the magnetic field is getting stronger and stronger. Therefore, the relationship between the magnetic field size and the remaining thickness of the target is established and monitored through standard procedures of current and voltage. In the same way, the target thickness can be monitored through DC bias during radio frequency sputtering. The third method realizes the monitoring of target thickness in vacuum environment under different process conditions. However, the applicant found through extensive research that the third method is only theoretically feasible. Since the sputtering power of the sputtering equipment is fixed during the detection process, various parameters of the sputtering equipment will inevitably change in actual production. The offset and changes in current and voltage may not only be caused by target etching, but may also be caused by the accumulation of changes in the sputtering equipment itself as the sputtering process proceeds.

In order to solve the above problems and get closer to the actual production situation, the present disclosure proposes a target in-situ monitoring method, which can eliminate the influence of the sputtering equipment itself from many aspects and can measure the target thickness in a more real-time and accurate manner. Prevent equipment and wafer contamination caused by target breakdown, improve target utilization, ensure the stability of the coating system, and thereby improve production efficiency.

Referring to Figure 1, Figure 1 shows a schematic flow chart of a target in-situ monitoring method in an embodiment of the present disclosure. An embodiment of the present disclosure provides a target in-situ monitoring method. The target in-situ monitoring method includes:

Step S110: Establish a self-test program in the sputtering equipment. The self-test program includes multiple deposition stages performed in sequence, and the sputtering power of the multiple deposition stages is different from each other;

After research by the inventor, it was found that voltage and current jumps caused by abnormalities in sputtering equipment generally do not exist at all power points. Therefore, using multiple deposition stages with different sputtering powers can eliminate the influence of such factors. The occurrence of current and voltage Changes in can only be caused by the thickness of the target material.

Step S120. When the target material and the sputtering equipment are used together, when the thickness of the target material needs to be detected, the sputtering equipment is started to perform a self-test program. After obtaining the voltage and current parameters of multiple deposition stages, The thickness of the target material is determined based on the voltage and current parameters of the multiple deposition stages and the corresponding relationship between the voltage and current parameters and the thickness of the target material.

The above-mentioned target in-situ monitoring method runs a self-test program to obtain the current and voltage parameters of different deposition stages, and combines them with the corresponding relationship about the target thickness to obtain the thickness of the target. The work efficiency is high and there is no need to move the target from Take it out from the process chamber; at the same time, the detection results are more accurate. In addition, in this disclosure, since the sputtering powers of multiple deposition stages are different from each other, that is, whether the detection data of voltage and current are abnormal under multiple sputtering powers, the purpose is to eliminate or reduce the problem caused by the sputtering equipment itself. The data offset generated during the process avoids misjudgments in the sputtering equipment, thereby making the detection data more authentic and reliable, which is conducive to the stability of the process, and can improve the target utilization rate on the premise of preventing target breakdown.

Please refer to Figure 2. Figure 2 shows a schematic flow chart of a target in-situ monitoring method in another embodiment of the present disclosure. An embodiment of the present disclosure provides a target in-situ monitoring method. A target in-situ monitoring method. Also includes:

Step S210: Establish a self-test program in the sputtering equipment. The self-test program includes multiple deposition stages performed in sequence, and the sputtering power of the multiple deposition stages is different from each other;

Step S220: When the target material and the sputtering equipment are used together for the first time, the sputtering equipment is started, and the self-test program is executed to sputter the target material; when the thickness loss degree of the target material is within the first setting range, the self-test program is obtained During the execution process, the voltage and current parameters and the thickness of the target material are measured, and the corresponding relationship between the voltage and current parameters and the thickness of the target material is obtained;

It should be noted that the first time the target material and sputtering equipment are used together means that the sputtering equipment has not performed the sputtering process on the target material. Among them, it may be because the new sputtering equipment is replaced but the original sputtering equipment is still used. If there is the same target material, it may be because the new target material is replaced but the old sputtering equipment is still used, or it may be that the new sputtering equipment and the new target material are replaced at the same time. In the case of the same sputtering equipment, when the target materials are different, since the bonding ratio, density and other parameters of different target sources are different, each new target material (new Source) needs to re-collect the machine output data for the first time to obtain the corresponding relationship between the voltage and current parameters and the thickness of the target material.

Specifically, the first setting range can be no more than 90%-95%. In this way, on the one hand, the breakdown phenomenon caused by excessive loss of the target material can be avoided, thereby ensuring the safety of the equipment. On the other hand, the loss degree of the target material is large enough, and the corresponding relationship between the voltage and current parameters and the thickness of the target material is relatively accurate, which can be used as an effective reference when the loss degree of the target material reaches the limit value in the later stage. Specifically, the first setting range is no more than 90%, 91%, 92%, 93%, 94%, 95%, etc., which can be flexibly adjusted and set according to actual needs and is not limited here. Of course, when the corresponding relationship between the voltage and current parameters and the thickness of the target material is a regular functional linear relationship, the upper limit of the first setting range can also be selected from data other than 90%-95%, which can also achieve a more accurate Simply obtain the corresponding relationship between the voltage and current parameters and the thickness of the target material.

Optionally, the first setting range is not less than 70%-80%. In this way, a key reference can be made to the current and voltage parameters when the loss degree of the target material is between 70% and 80%, which can help prevent breakdown of the target material. Specifically, the first setting range is no less than 70%, 71%, 72%, 73%, 74%, 75%, 76%, 77%, 78%, 79%, 80%, etc., which can be determined according to actual needs. Flexible adjustments and settings, no limitations here. Of course, when the corresponding relationship between the voltage and current parameters and the thickness of the target material is a regular functional linear relationship, the lower limit of the first setting range can also be selected from data other than 70%-80%, which can also achieve a more accurate Simply obtain the corresponding relationship between the voltage and current parameters and the thickness of the target material.

In a specific embodiment, the first setting range is, for example, 0%-95%. And when the degree of loss of the target material is smaller, the detection evaluation rate of the current and voltage parameters of the target material is smaller. When the degree of loss of the target material is greater, the detection evaluation rate of the current and voltage parameters of the target material is greater. For example, in the initial stage of putting the target into the sputtering equipment, the loss of the target is very small, for example, within 40%. At this time, there is no need to consider the breakdown of the target. For example, run a self-test program once a week. ; As the target is used for a longer time, the target will be gradually consumed, and the degree of loss of the target will gradually increase. For example, when the degree of loss of the target is 40%-70%, the self-test frequency of the target will be increased accordingly, such as Run the self-test program once a day; when the loss of the target material is very large, that is, there is a possibility of breakdown, for example, the loss degree is 70%-95%, the self-test frequency further increases, for example, every 20 pieces processed - When 30 wafers are produced, a self-test program will be run accordingly.

In a specific embodiment, the first setting range is, for example, 70%-95%.

Step S230: When the target material and the sputtering equipment are used together again, when the thickness of the target material needs to be detected, the sputtering equipment is started to perform a self-test program, and after the voltage and current parameters of multiple deposition stages are obtained respectively , the thickness of the target material is determined based on the voltage and current parameters and corresponding relationships of the multiple deposition stages.

It should be noted that when the sputtering equipment and the target material are used together again, the voltage and current parameters are directly obtained under the sputtering process performed by the sputtering equipment, and then the target is determined based on the voltage and current parameters and the pre-obtained corresponding relationship. The current thickness of the material is enough. The use of the target and the sputtering equipment together again refers to the second, third or other times of combined use.

The above-mentioned target in-situ monitoring method obtains the voltage and current parameters and the thickness of the target when the target and sputtering equipment are used together for the first time, and obtains the corresponding relationship between the voltage and current parameters and the thickness of the target, and establishes a monitoring feedback mechanism. Run the self-check program, and the system will compare the current and voltage under specific power and pressure with the collected data to judge the remaining thickness of the target material by itself. The work efficiency is high and there is no need to take the target material out of the process chamber; at the same time, the results are detected More accurate. In addition, in this disclosure, since the sputtering powers of multiple deposition stages are different from each other, that is, whether the detection data of voltage and current are abnormal under multiple sputtering powers, the purpose is to eliminate or reduce the problem caused by the sputtering equipment itself. The data offset generated during the process avoids misjudgments in the sputtering equipment, thereby making the detection data more authentic and reliable, which is conducive to the stability of the process, and can improve the target utilization rate on the premise of preventing target breakdown.

In one embodiment, the target material in this embodiment is, for example, a conductive target material, including but not limited to metals and metal compounds such as Cu, W, Co, Al, Ti, etc.

In one embodiment, when the target material and the sputtering equipment are used together again, when the thickness loss of the target material is within the first preset range, the sputtering equipment is started to perform a self-test procedure. In this way, when the thickness loss of the target material is less than the first preset range, there is no need to start the sputtering equipment to perform a self-test procedure, thereby avoiding waste of the target material due to detection.

It should be noted that the thickness loss of the target material should be understood as follows: the initial thickness of the target material (that is, the thickness before use) is defined as D, and the current thickness of the target material (that is, the thickness after a period of use) ) is defined as d, and the thickness loss degree of the target material is correspondingly (D-d)/D.

In one embodiment, the first preset range is no less than 70%. In this way, the inventor found through research that when the thickness loss of the target material exceeds 70%, it is easy to be penetrated. Since the first preset range is set to not less than 70%, it is possible to detect and determine whether the target material is damaged in a timely manner. At the same time, since the self-test procedure is not carried out when the thickness loss of the target material is less than 70%, the loss of the target material during the self-test procedure can be reduced.

In one embodiment, the first preset range is no greater than 95%. In this way, the inventor found that the sputtering equipment performs the self-test procedure until the loss level of the target material reaches 95%, that is, when the loss level of the target material is judged to be within 95%, it is still supplied, that is, the wafer enters the sputtering equipment. The process chamber is subjected to sputtering treatment, which can improve the utilization rate of the target. When the loss of the target is greater than 95%, it will no longer be supplied, and accordingly, a prompt will be given to replace the target with a new one.

It should be noted that the first preset range is not limited to 70% to 95%. The first preset range can also be flexibly adjusted according to actual needs. For example, the first preset range is no less than 60%, and/or, no Greater than 90%; for another example, the first preset range is no less than 80%, and/or no greater than 90%; for another example, the first preset range is no less than 65%, and/or no greater than 98%. For another example, the first preset range is no less than 5%, and/or no more than 95%. For another example, the first preset range is 0 to 95%.

In one embodiment, when the thickness loss of the target material is within the first preset range, the sputtering equipment is started every first set time to perform a self-test procedure. Wherein, optionally, the first set time is, for example, 10S, 20S, 60S, 200S, 300S, etc. The first setting time can be flexibly adjusted and set according to actual needs and is not limited here.

In one embodiment, when the thickness loss of the target material is within the first preset range, the sputtering equipment is started to perform a self-test procedure according to a preset time.

It should be noted that the preset time can also be flexibly adjusted and set according to actual needs and is not limited here.

In one embodiment, when the thickness loss of the target material is within the first preset range, the sputtering equipment is started multiple times to perform the self-test procedure. In this way, when it is in the first preset range, the more times the self-test program is started, the more conducive it will be to accurately determine the current thickness of the target material.

It should be noted that the number of times the self-test program is started can also be flexibly adjusted and set according to actual needs, and is not limited here.

In one embodiment, when the thickness loss degree of the target material is within the second preset range, and the second preset range is greater than the first preset range and not greater than 97%, the target material is subjected to at least one adhesion treatment until the target material is The degree of thickness loss is 97%.

Specifically, 10-15 cycles of adhesion treatment (also called cycle paste) can be performed according to actual needs. During each adhesion process, target atoms are sputtered onto the walls of the process chamber under high voltage, thereby improving the particle condition in the chamber. This allows the parts of the cavity wall where particles may fall to be adhered so that they will not fall off easily.

Optionally, the second preset range is, for example, 95% to 96%, or 95% to 97%, or can be flexibly set to other numerical ranges according to actual needs.

In one embodiment, when the thickness loss degree of the target material is within the third preset range and the third preset range is greater than the second preset range, the target material is scrapped.

Optionally, the third preset range includes but is not limited to a numerical range greater than 96%-97%, or is set to other numerical ranges according to actual requirements.

In this way, on the one hand, the condition of particulate matter in the cavity is improved through adhesion treatment (cycle paste treatment); on the other hand, when the remaining 3%-4% of the target material is scrapped, it can prevent the target material from being penetrated and Cause cavity pollution.

In one embodiment, when the thickness loss degree of the target material is within the third preset range and the third preset range is greater than the second preset range, the prompt action is performed. Specifically, prompts include but are not limited to voice prompts, vibration prompts, light prompts, etc. In this way, when it is determined that the thickness loss of the target material reaches the third preset range, it means that the target material is about to be broken down, and the staff is promptly reminded to perform the corresponding target replacement operation.

In one embodiment, the sputtering power of multiple deposition stages increases or decreases sequentially. In this way, on the one hand, the applicant's research found that jumps caused by equipment abnormalities generally do not exist at all power points. Therefore, using gradient power for the sputtering power in multiple deposition stages can eliminate the current caused by jumps caused by equipment abnormalities. The voltage changes, so that the change in current and voltage is mainly caused by the change in the thickness of the target material. Then the thickness of the target material can be accurately obtained based on the detected current and voltage; on the other hand, the multiple deposition stages The sputtering power is set to a gradient power that increases or decreases successively, which can help eliminate or reduce the data offset caused by the sputtering equipment itself in the sputtering process, avoid misjudgments in the sputtering equipment, and thus make the detection The data is more authentic and reliable, which is conducive to the stability of the process.

Specifically, the sputtering power of multiple deposition stages increases or decreases uniformly in sequence.

Of course, as some optional solutions, the sputtering power in multiple deposition stages is set to first increase and then decrease, or first decrease and then increase, or other regular or irregular forms, which are not discussed here. Specific limitations can be made and can be flexibly adjusted and set according to actual needs.

In one embodiment, the difference in sputtering power between two adjacent deposition stages is no less than 50 W. In this way, it can help eliminate or reduce the data offset caused by the sputtering equipment itself in the sputtering process, avoid misjudgments in the sputtering equipment, thereby making the detection data more authentic and reliable, and conducive to the stability of the process.

In one embodiment, the difference in sputtering power between two adjacent deposition stages is 50W to 500W. In this way, it can help eliminate or reduce the data offset caused by the sputtering equipment itself in the sputtering process, avoid misjudgments in the sputtering equipment, thereby making the detection data more authentic and reliable, and conducive to the stability of the process.

Further, the inventor found through research that when the difference in sputtering power between two adjacent deposition stages is controlled to 90W, 100W or 110W, the detection data of voltage and current are most accurate, so that the thickness of the target material can be obtained more accurately. size.

In one embodiment, there are at least 5 deposition stages. In this way, when the number of deposition stage settings is not too small, it can help eliminate or reduce the data offset caused by the sputtering equipment itself in the sputtering process, avoid misjudgments by the sputtering equipment, and thus make the detection data more authentic and reliable. Conducive to the stability of the process. As an example, the deposition stages are set from 5 to 15.

In one embodiment, there are, for example, eight deposition stages, and the sputtering powers are 100W, 200W, 300W, 400W, 500W, 600W, 700W, and 800W respectively.

In another embodiment, there are, for example, 10 deposition stages, and the sputtering powers are 80W, 160W, 240W, 320W, 400W, 480W, 560W, and 640W respectively.

In another embodiment, there are, for example, six deposition stages, and the sputtering powers are 120W, 240W, 360W, 480W, 600W, and 720W respectively.

In one embodiment, the duration of each deposition stage is controlled to be 10S-20S. Specifically, it includes but is not limited to settings of 10S, 12S, 14S, 15S, 16S, 18S, 20S, etc.

In one embodiment, the air pressure inside the process chamber of the sputtering equipment remains consistent during multiple deposition stages. In this way, it is possible to avoid the impact of different air pressures inside the process chamber on the detection of current and voltage, so that changes in current and voltage are mainly caused by changes in the thickness of the target material. Then it is helpful to accurately detect the current and voltage based on the detected current and voltage. Get the thickness of the target material.

In one embodiment, the self-test procedure also includes a gas pressure stabilization phase before multiple deposition stages. In the gas pressure stabilization phase, an inert gas is introduced into the process chamber of the sputtering equipment, and the gas pressure in the process chamber is stabilized. state. In this way, before entering multiple deposition stages, due to the stable air pressure stage, the air pressure of the process chamber can be adjusted to a stable state through the stable air pressure stage. When the air pressure inside the process chamber is stable, the next stage will be entered. In this way, the air pressure in the deposition stage is the same as the air pressure after stabilization in the stable stage, achieving better control of the air pressure in the deposition stage.

Among them, the inert gas introduced into the process chamber of the sputtering equipment includes but is not limited to Ar, Kr, etc., and can also be flexibly set to other types of gas according to actual needs.

In one embodiment, the air pressure range of the stable air pressure stage is 1mtorr-10mtorr.

In one embodiment, the time of the stable air pressure phase is no more than 10 seconds. Specifically, the time of the stable air pressure phase is controlled to be 5S-10S, including but not limited to 5S, 6S, 7S, 8S, 9S, 10S or set to other values.

In one embodiment, the self-test program also includes an ignition glowing stage located before multiple deposition stages, and the ignition glowing stage is located after the stable air pressure stage; during the ignition glowing stage (ignition glowing refers to the Ar gas being Ionization starts the process of generating plasma. The ignition starts to generate glow discharge.), turn on the DC voltage or radio frequency voltage, and the target starts sputtering.

In one embodiment, the time of the ignition starting phase is controlled to be 1S-3S.

In one embodiment, the target in-situ monitoring method further includes the steps of: installing the target, installing the target to be used into the thin film deposition chamber and pumping high vacuum (10E-8torr), and removing impurities on the surface of the target. object removal.

It should be noted that for manual sputtering equipment, when the target thickness needs to be detected, the manually operated sputtering equipment performs a self-test procedure; for automated sputtering equipment, it can be pre-set in the main control system Set the detection time and detection frequency of the target thickness, and at the corresponding detection time, the main control system automatically triggers the sputtering equipment to perform the self-test program.

In one embodiment, a target in-situ monitoring system includes:

The self-test program establishment module is used to establish a self-test program in the sputtering equipment; wherein the self-test program includes multiple deposition stages performed in sequence, and the sputtering powers of the multiple deposition stages are different from each other;

Data acquisition module, the data acquisition module is used to collect voltage and current parameters of multiple deposition stages during the self-test program of the sputtering equipment;

The calculation module is used to determine the thickness of the target material according to the voltage and current parameters of the multiple deposition stages and the corresponding relationship between the voltage and current parameters and the thickness of the target material.

The above-mentioned target in-situ monitoring system runs a self-check program to obtain the current and voltage parameters of different deposition stages, and combines it with the corresponding relationship about the target thickness to obtain the thickness of the target. The work efficiency is high and there is no need to move the target from Take it out from the process chamber; at the same time, the detection results are more accurate. In addition, in this disclosure, since the sputtering powers of multiple deposition stages are different from each other, that is, whether the detection data of voltage and current are abnormal under multiple sputtering powers, the purpose is to eliminate or reduce the problems caused by the sputtering equipment itself. The data offset generated during the process avoids misjudgments in the sputtering equipment, thereby making the detection data more authentic and reliable, which is conducive to the stability of the process, and can improve the target utilization rate on the premise of preventing target breakdown.

For specific limitations on the target in-situ monitoring system, please refer to the limitations on the target in-situ monitoring method mentioned above, which will not be described again here. Each module in the above-mentioned target in-situ monitoring system can be realized in whole or in part through software, hardware and their combination. Each of the above modules may be embedded in or independent of the processor of the computer device in the form of hardware, or may be stored in the memory of the computer device in the form of software, so that the processor can call and execute the operations corresponding to the above modules. It should be noted that the division of modules in the embodiment of the present disclosure is schematic and is only a logical function division. There may be other division methods in actual implementation.

In one embodiment, the target in-situ monitoring system also includes a correspondence acquisition module. The correspondence acquisition module is used to perform a self-test procedure on the target when the target and the sputtering equipment are used together for the first time. During the processing, the voltage and current parameters and the thickness of the target material are obtained, and the corresponding relationship between the voltage and current parameters and the thickness of the target material is obtained.

In one embodiment, the target in-situ monitoring system also includes a supply stop module, which is used to prevent the wafer from entering the process chamber of the sputtering equipment when the thickness loss of the target is greater than the first preset range. room for sputtering.

In one embodiment, the target in-situ monitoring system further includes an adhesion processing module. The adhesion processing module is used when the thickness loss degree of the target reaches a second preset range. The second preset range is greater than the first preset range and is not When it is greater than 97%, perform at least one adhesion treatment on the target material until the thickness loss of the target material reaches 97%.

In one embodiment, the target in-situ monitoring system also includes a scrap module. The scrap module is used to scrap the target when the thickness loss degree of the target is within the third preset range and the third preset range is greater than 97%. deal with.

In one embodiment, the target in-situ monitoring system also includes a prompt module, which is used to prompt when the thickness loss degree of the target is within the third preset range and the third preset range is greater than the second preset range. action.

In one embodiment, a computer device includes a memory and a processor. The memory stores a computer program. When the processor executes the computer program, it implements the following steps:

In one embodiment, a computer-readable storage medium has a computer program stored thereon. When the computer program is executed by a processor, the following steps are implemented:

Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program may include the processes of the above method embodiments. Any reference to memory, storage, database or other media used in the various embodiments provided by this disclosure may include at least one of non-volatile and volatile memory. Non-volatile memory may include read-only memory (ROM), magnetic tape, floppy disk, flash memory or optical memory, etc. Volatile memory may include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM can be in many forms, such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM).

The technical features of the above embodiments can be combined in any way. To simplify the description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, all possible combinations should be used. It is considered to be within the scope of this manual.

The above embodiments only express several implementation modes of the present disclosure, and their descriptions are relatively specific and detailed, but should not be construed as limiting the scope of the disclosed patent. It should be noted that, for those of ordinary skill in the art, several modifications and improvements can be made without departing from the concept of the present disclosure, and these all fall within the protection scope of the present disclosure. Therefore, the protection scope of the patent disclosed should be determined by the appended claims.

In the description of the present disclosure, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " "Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inside", "Outside", "Clockwise", "Counterclockwise", "Axis" The orientation or positional relationship indicated by "radial direction", "circumferential direction", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying the device or device to which it is referred. Elements must have a specific orientation, be constructed and operate in a specific orientation and therefore are not to be construed as limitations on the disclosure.

In addition, the terms “first” and “second” are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Therefore, features defined as "first" and "second" may explicitly or implicitly include at least one of these features. In the description of the present disclosure, "plurality" means at least two, such as two, three, etc., unless otherwise expressly and specifically limited.

In this disclosure, unless otherwise explicitly stated and limited, the terms "installation", "connection", "connection", "fixing" and other terms should be understood in a broad sense. For example, it can be a fixed connection or a detachable connection. , or integrated into one; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two elements or an interactive relationship between two elements, unless otherwise specified limitations. For those of ordinary skill in the art, the specific meanings of the above terms in this disclosure can be understood according to specific circumstances.

In this disclosure, unless otherwise expressly stated and limited, a first feature being "on" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features may be in indirect contact through an intermediary. touch. Furthermore, the terms "above", "above" and "above" the first feature is above the second feature may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is higher in level than the second feature. "Below", "below" and "beneath" the first feature to the second feature may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature has a smaller horizontal height than the second feature.

It should be noted that when an element is referred to as being "mounted" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is said to be "connected" to another element, it can be directly connected to the other element or there may also be intervening elements present. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementation manner.

Industrial applicability

The target in-situ monitoring method, system, computer equipment and storage medium provided by the embodiments of the present disclosure run a self-check program. The system will compare the current and voltage under specific power and pressure with the collected data to determine the remaining thickness of the target on its own. The size of precise. In addition, in this disclosure, since the sputtering powers of multiple deposition stages are different from each other, that is, whether the detection data of voltage and current are abnormal under multiple sputtering powers, the purpose is to eliminate or reduce the problem caused by the sputtering equipment itself. The data offset generated during the process avoids misjudgments in the sputtering equipment, thereby making the detection data more authentic and reliable, which is conducive to the stability of the process, and can improve the target utilization rate on the premise of preventing target breakdown.

Claims

A target in-situ monitoring method, the target in-situ monitoring method includes:

Establishing a self-test program in the sputtering equipment, the self-test program includes multiple deposition stages performed in sequence, and the sputtering power of the multiple deposition stages is different from each other;

During the cooperative use of the target material and the sputtering equipment, when it is necessary to detect the thickness of the target material, the sputtering equipment is started to execute the self-test program, and after obtaining multiple After the voltage and current parameters of the deposition stage are determined, the thickness of the target material is determined based on the multiple voltage and current parameters of the deposition stage and the corresponding relationship between the voltage and current parameters and the thickness of the target material.
The target in-situ monitoring method according to claim 1, wherein the method for obtaining the corresponding relationship between the voltage and current parameters and the target thickness includes: when the target and the sputtering equipment are used together for the first time, starting the Sputtering equipment, performs the self-test program to perform sputtering processing on the target material; when the thickness loss degree of the target material is within the first set range, obtains the voltage and current parameters and all the parameters during the execution of the self-test program. Describe the thickness of the target material, and obtain the corresponding relationship between the voltage and current parameters and the thickness of the target material.
The target in-situ monitoring method according to claim 1 or 2, wherein during the cooperative use of the target material and the sputtering equipment, when the thickness loss degree of the target material is within the first preset range When, the sputtering equipment is started to execute the self-test program.
The target in-situ monitoring method according to claim 3, wherein the first preset range is no less than 70% and/or no more than 95%.
The target in-situ monitoring method according to claim 3 or 4, wherein when the thickness loss degree of the target material is in the first preset range, the sputtering equipment is started every first set time to execute the and/or start the sputtering equipment to perform the self-test program according to a preset time; and/or start the sputtering equipment multiple times to perform the self-test program.
The target in-situ monitoring method according to any one of claims 3 to 5, wherein when the thickness loss degree of the target material is greater than the first preset range, the wafer is prevented from entering the process of the sputtering equipment. The chamber is sputtered.
The target in-situ monitoring method according to any one of claims 3-6, wherein when the thickness loss degree of the target material is a second preset range, the second preset range is greater than the first When the preset range is not greater than 97%, the target material is subjected to at least one adhesion treatment until the thickness loss of the target material reaches 97%.
The target in-situ monitoring method according to any one of claims 3 to 7, wherein when the thickness loss degree of the target material is a third preset range and the third preset range is greater than 97%, The target material is discarded.
The target in-situ monitoring method according to claim 7 or 8, wherein when the thickness loss degree of the target material is a third preset range, the third preset range is greater than the second preset range. , perform prompt actions.
The target in-situ monitoring method according to any one of claims 1 to 9, wherein the sputtering power of multiple deposition stages increases or decreases sequentially.
The target in-situ monitoring method according to claim 10, wherein the difference in sputtering power between two adjacent deposition stages is not less than 50W.
The target in-situ monitoring method according to any one of claims 1-11, wherein the number of deposition stages is at least 5.
The target in-situ monitoring method according to any one of claims 1 to 12, wherein the air pressure inside the process chamber of the sputtering equipment remains consistent during multiple deposition stages.
The target in-situ monitoring method according to any one of claims 1 to 13, wherein the self-test program further includes a stable air pressure stage located before a plurality of the deposition stages, and in the stable air pressure stage, An inert gas is introduced into the process chamber of the sputtering equipment, and the gas pressure in the process chamber reaches a stable state.
The target in-situ monitoring method according to claim 14, wherein the air pressure range of the stable air pressure stage is 1mtorr-10mtorr; the time of the stable air pressure stage is no more than 10S.
The target in-situ monitoring method according to claim 14 or 15, wherein the self-test program further includes an ignition and glowing stage located before a plurality of the deposition stages, and the ignition and glowing stage is located at the stable air pressure. After the stage; in the ignition and ignition stage, the DC voltage or radio frequency voltage is turned on, and the target material starts sputtering treatment; the time of the ignition and ignition stage is controlled to 1S-3S.
A target in-situ monitoring system, the target in-situ monitoring system includes:

A self-test program establishment module is used to establish a self-test program in the sputtering equipment; wherein the self-test program includes multiple deposition stages performed in sequence, and the sputtering power of the multiple deposition stages interacts with each other. Are not the same;

A data acquisition module, the data acquisition module is used to respectively collect voltage and current parameters of multiple deposition stages during the execution of the self-test program by the sputtering equipment;

A calculation module, the calculation module is used to determine the thickness of the target material according to the voltage and current parameters of the plurality of deposition stages and the corresponding relationship between the voltage and current parameters and the thickness of the target material.
The target in-situ monitoring system according to claim 17, wherein the target in-situ monitoring system further includes a corresponding relationship acquisition module, the corresponding relationship acquisition module is used to compare the target and the sputtering equipment. When used together for the first time, the sputtering equipment executes the self-test program to perform sputtering treatment on the target, obtains voltage and current parameters and the thickness of the target, and obtains the relationship between the voltage and current parameters and the thickness of the target. Correspondence; and/or

The target in-situ monitoring system also includes a supply stop module, which is used to prevent the wafer from entering the sputtering equipment when the thickness loss of the target is greater than the first preset range. process chamber for sputtering; and/or

The target in-situ monitoring system also includes an adhesion processing module. The adhesion processing module is used when the thickness loss degree of the target is a second preset range, and the second preset range is greater than the first When the preset range is not greater than 97%, perform at least one adhesion treatment on the target material until the thickness loss of the target material reaches 97%; and/or

The target in-situ monitoring system also includes a scrap module. The scrap module is used to scrap the target when the thickness loss degree of the target is within a third preset range, and when the third preset range is greater than 97%. The target materials are scrapped; and/or

The target in-situ monitoring system also includes a prompt module, the prompt module is used when the thickness loss degree of the target material is a third preset range, and the third preset range is greater than the second preset range. When within the range, perform prompt actions.
A computer device includes a memory and a processor. The memory stores a computer program. When the processor executes the computer program, the steps of the method according to any one of claims 1 to 16 are implemented.
A computer-readable storage medium having a computer program stored thereon, which implements the steps of the method according to any one of claims 1 to 16 when executed by a processor.