CN114639618A - Wafer cleaning and etching device based on heat energy flow field - Google Patents
Wafer cleaning and etching device based on heat energy flow field Download PDFInfo
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- CN114639618A CN114639618A CN202111677809.4A CN202111677809A CN114639618A CN 114639618 A CN114639618 A CN 114639618A CN 202111677809 A CN202111677809 A CN 202111677809A CN 114639618 A CN114639618 A CN 114639618A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
The invention provides a wafer cleaning and etching device based on a heat energy flow field, which comprises: the placing table is fixed on the bottom plate through a rotating shaft; the wafer is arranged on the placing table; the first spraying module sprays cleaning solution to the surface of the wafer through a first nozzle; the second spraying module sprays atomized solution to the surface of the wafer through the second nozzle to form a heat energy flow field on the surface of the wafer; the third spraying module sprays etching solution to the surface of the wafer through a third nozzle; and the control module is used for controlling the rotating shaft to rotate, controlling the rotating part to rotate so as to drive the first nozzle to move to the upper part of the wafer and control the first nozzle to spray cleaning solution, controlling the second nozzle to spray atomized solution and controlling the third nozzle to spray etching solution. The device has the beneficial effects that the heat energy flow field is formed on the surface of the wafer through the second nozzle, the etching solution on the surface of the wafer can be stabilized at the preset temperature under the action of the heat energy flow field, and the problem of temperature stability is solved.
Description
Technical Field
The invention relates to the technical field of wafer cleaning and etching, in particular to a wafer cleaning and etching device based on a heat energy flow field.
Background
In a specific high temperature chemical wet process, a single-chip cleaning etching device is generally adopted for cleaning and etching, and in the high temperature chemical wet process, the relative stability of the surface temperature of the wafer is required to be kept all the time, so that the characteristic of wafer surface treatment is ensured to be maintained.
However, the current cleaning and etching device cannot give consideration to the flow field characteristics of the wafer surface, and cannot maintain the good environment and temperature of the flow field, so that the temperature stability problem often occurs when the wafer surface is etched.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a wafer cleaning and etching device based on a heat energy flow field, which comprises:
the placing table is fixed on a bottom plate through a rotating shaft;
the wafer is arranged on the placing table;
the first spraying module comprises a first fixed part and a rotating part, one end of the rotating part is provided with a first nozzle, and a cleaning solution is sprayed to the surface of the wafer through the first nozzle to clean the wafer;
the second spraying module comprises a second fixing piece and a third fixing piece, a second nozzle is arranged at one end, facing the wafer, of the third fixing piece, and an atomized solution is sprayed to the surface of the wafer through the second nozzle to form a heat energy flow field on the surface of the wafer;
the third spraying module comprises a fourth fixing piece and a fifth fixing piece, a third nozzle is arranged on one side, facing the wafer, of the fifth fixing piece, and etching solution is sprayed to the surface of the wafer through the third nozzle to etch the wafer;
a control module, connect respectively the rotation axis rotate the piece first nozzle the second nozzle with the third nozzle is used for control the rotation axis rotates, controls rotate the piece and rotate in order to drive first nozzle removes extremely the top of wafer and control first nozzle sprays cleaning solution, control the second nozzle sprays atomizing solution, and control the third nozzle sprays etching solution.
Preferably, the first nozzle is a conical nozzle.
Preferably, the second nozzle is a triangular pyramid nozzle.
Preferably, the third nozzle is a cylindrical nozzle.
Preferably, the bottom plate is provided with a liquid leakage window for conveying the cleaning solution, the atomized solution and the etching solution sputtered on the placing table to an external recovery device.
Preferably, the bottom plate is provided with at least one mounting opening.
Preferably, the temperature of the atomized solution is 10 ℃ to 99.9 ℃.
Preferably, the particle size of the atomized solution is 1 nm to 100000 nm.
The technical scheme has the following advantages or beneficial effects: the device cleans the surface of the wafer through the first nozzle, forms a heat energy flow field on the surface of the wafer through the second nozzle, etches the wafer through the third nozzle, and can stabilize the etching solution on the surface of the wafer at a preset temperature under the action of the heat energy flow field, thereby solving the problem of temperature stability.
Drawings
FIG. 1 is a schematic diagram of the structure of the apparatus according to the preferred embodiment of the present invention;
FIG. 2 is a schematic diagram of a control module according to a preferred embodiment of the present invention;
FIG. 3 is a schematic diagram of a recycling module according to a preferred embodiment of the present invention;
fig. 4 is a partially enlarged schematic structural diagram of the first nozzle, the second nozzle, and the third nozzle in the preferred embodiment of the invention.
Detailed Description
The invention is described in detail below with reference to the figures and the specific embodiments. The present invention is not limited to the embodiment, and other embodiments may be made within the scope of the present invention as long as the gist of the present invention is satisfied.
In accordance with the preferred embodiment of the present invention, in view of the above problems in the prior art, there is provided a wafer cleaning and etching apparatus based on a thermal flow field, as shown in fig. 1 and 2, comprising:
a placing table 1, the placing table 1 is fixed on a bottom plate 12 through a rotating shaft 11;
a wafer 2 arranged on the placing table 1;
a first spraying module 3, the first spraying module 3 includes a first fixed part 31 and a rotating part 32, and one end of the rotating part 32 is provided with a first nozzle 33, and a cleaning solution is sprayed to the surface of the wafer 2 through the first nozzle 33 to clean the wafer 2;
a second spraying module 4, wherein the second spraying module 4 comprises a second fixing member 41 and a third fixing member 42, and one end of the third fixing member 42 facing the wafer 2 is provided with a second nozzle 43, and an atomized solution is sprayed onto the surface of the wafer 2 through the second nozzle 43 to form a thermal energy flow field on the surface of the wafer 2;
a third spraying module 5, wherein the third spraying module 5 includes a fourth fixing member 51 and a fifth fixing member 52, and a third nozzle 53 is disposed on a side of the fifth fixing member 52 facing the wafer 2, and an etching solution is sprayed onto the surface of the wafer 2 through the third nozzle 53 to etch the wafer 2;
and the control module 6 is respectively connected with the rotating shaft 11, the rotating member 32, the first nozzle 33, the second nozzle 43 and the third nozzle 53, and is used for controlling the rotating shaft 11 to rotate, controlling the rotating member 32 to rotate so as to drive the first nozzle 33 to move to the upper part of the wafer 2, controlling the first nozzle 33 to spray the cleaning solution, controlling the second nozzle 43 to spray the atomized solution and controlling the third nozzle 53 to spray the etching solution.
Specifically, in the present embodiment, in practical operation, the control module 6 controls the rotating member 32 to move the first nozzle 33 to the upper side of the wafer 2 and controls the first nozzle 33 to spray the cleaning solution to wet the surface of the wafer 2, after the spraying is finished, the rotating member 32 is controlled to move the first nozzle 33 to the initial position, and then the second nozzle 43 and the third nozzle 53 are controlled to simultaneously spray the atomized solution and the etching solution to the surface of the wafer 2, and the etching solution and the atomized solution are in contact with each other on the surface of the wafer 2 to increase the temperature of the etching solution.
Preferably, the atomized solution is formed by ultrasonic vibration.
Preferably, the atomized solution is deionized water or hydrogen peroxide.
In a preferred embodiment of the present invention, as shown in FIG. 4, the first nozzle 33 is a conical nozzle.
Specifically, in the present embodiment, in order to make the first nozzle 33 not affect the normal use of the third nozzle 53, the height of the first nozzle 33 relative to the bottom plate 12 is set between the third nozzle 53 and the wafer 2, and the first nozzle 33 is a conical nozzle, so that the spraying range of the cleaning solution can cover the upper surface of the wafer 2 as much as possible.
In a preferred embodiment of the present invention, as shown in fig. 4, the second nozzle 43 is a triangular pyramidal nozzle.
Specifically, in this embodiment, since the second nozzle 43 is disposed on the side surface of the wafer 2, the second nozzle 43 is in a triangular cone shape, so that the spraying range of the atomized solution can cover the upper surface of the wafer 2.
In a preferred embodiment of the present invention, as shown in fig. 4, the third nozzle 53 is a cylindrical nozzle.
Specifically, in the present embodiment, considering that the height of the third nozzle 53 is highest with respect to the bottom plate 12, a cylindrical nozzle is adopted as the third nozzle 53, so that the spray range of the etching solution can cover the upper surface of the wafer 2.
In the preferred embodiment of the present invention, the bottom plate 12 is provided with a liquid leakage window 7 for transporting the cleaning solution, the atomized solution and the etching solution sputtered on the placing table 1 to an external recycling device.
In the preferred embodiment of the present invention, the bottom plate 12 is provided with at least one mounting opening 8.
Specifically, in this embodiment, a nozzle may be added through the mounting port 8.
In a preferred embodiment of the present invention, the temperature of the atomized solution is 10 ℃ to 99.9 ℃.
In a preferred embodiment of the present invention, the particle size of the atomized solution is 1 nm to 100000 nm.
The first embodiment is as follows:
the third nozzle 53 can be a composite output nozzle, has a double-sleeve structure, is arranged corresponding to an output pipeline of hydrogen peroxide and sulfuric acid, and is firstly arranged in the inner-layer pipe sleeve to mix the hydrogen peroxide and the sulfuric acid, and is fully mixed and then is guided into the outer-layer pipe sleeve under the pushing action of liquid, so that the effect of extruding and breaking bubbles is generated under the circulating flow action, the problem that a large amount of bubbles are generated by hydrogen peroxide and sulfuric acid mixed solution is reduced, and the hydrogen peroxide and sulfuric acid mixed solution is output by the nozzle.
Preferably, mixing after hydrogen peroxide solution and sulphuric acid get into inlayer pipe sleeve, receiving liquid pushing effect, because the specific gravity of bubble is low can the rebound, after receiving liquid pushing effect, the bubble moves to the spacious area of top, receives liquid pushing effect when, borrows by the telescopic backward flow effect of inlayer pipe, exports outer pipe sleeve with mixed solution.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (8)
1. A wafer cleaning and etching device based on a thermal energy flow field is characterized by comprising:
the placing table is fixed on a bottom plate through a rotating shaft;
the wafer is arranged on the placing table;
the first spraying module comprises a first fixed part and a rotating part, a first nozzle is arranged at one end of the rotating part, and a cleaning solution is sprayed to the surface of the wafer through the first nozzle to clean the wafer;
the second spraying module comprises a second fixing piece and a third fixing piece, a second nozzle is arranged at one end, facing the wafer, of the third fixing piece, and an atomized solution is sprayed to the surface of the wafer through the second nozzle to form a heat energy flow field on the surface of the wafer;
the third spraying module comprises a fourth fixing piece and a fifth fixing piece, a third nozzle is arranged on one side, facing the wafer, of the fifth fixing piece, and etching solution is sprayed to the surface of the wafer through the third nozzle to etch the wafer;
a control module, connect respectively the rotation axis rotate the piece first nozzle the second nozzle with the third nozzle is used for control the rotation axis rotates, controls rotate the piece and rotate in order to drive first nozzle removes extremely the top of wafer and control first nozzle sprays cleaning solution, control the second nozzle sprays atomizing solution, and control the third nozzle sprays etching solution.
2. The high temperature etching apparatus of claim 1, wherein the first nozzle is a conical nozzle.
3. The high temperature etching apparatus according to claim 1, wherein the second nozzle is a triangular pyramidal nozzle.
4. The high temperature etching apparatus of claim 1, wherein the third nozzle is a cylindrical nozzle.
5. A high temperature etching apparatus as claimed in claim 1, wherein the bottom plate is provided with a liquid leakage window for transporting the cleaning solution, the atomized solution and the etching solution sputtered on the placing table to an external recycling device.
6. A high temperature etching apparatus according to claim 1, wherein the base plate is provided with at least one mounting opening.
7. The high temperature etching apparatus according to claim 1, wherein the temperature of the atomized solution is 10 to 99.9 degrees celsius.
8. A high temperature etching apparatus as claimed in claim 1, wherein the particle size of the atomized solution is 1 nm to 100000 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111677809.4A CN114639618A (en) | 2021-12-31 | 2021-12-31 | Wafer cleaning and etching device based on heat energy flow field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111677809.4A CN114639618A (en) | 2021-12-31 | 2021-12-31 | Wafer cleaning and etching device based on heat energy flow field |
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| Publication Number | Publication Date |
|---|---|
| CN114639618A true CN114639618A (en) | 2022-06-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111677809.4A Pending CN114639618A (en) | 2021-12-31 | 2021-12-31 | Wafer cleaning and etching device based on heat energy flow field |
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| CN (1) | CN114639618A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115106323A (en) * | 2022-07-06 | 2022-09-27 | 至微半导体(上海)有限公司 | Spraying system for establishing gradient structure etching and particle control device |
-
2021
- 2021-12-31 CN CN202111677809.4A patent/CN114639618A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115106323A (en) * | 2022-07-06 | 2022-09-27 | 至微半导体(上海)有限公司 | Spraying system for establishing gradient structure etching and particle control device |
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