CN114630252A - MEMS transducer - Google Patents
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- CN114630252A CN114630252A CN202210390737.3A CN202210390737A CN114630252A CN 114630252 A CN114630252 A CN 114630252A CN 202210390737 A CN202210390737 A CN 202210390737A CN 114630252 A CN114630252 A CN 114630252A
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- mems transducer
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- 239000012528 membrane Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000005452 bending Methods 0.000 claims abstract description 3
- 239000002184 metal Substances 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 230000009471 action Effects 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/02—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
- B32B3/08—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by added members at particular parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/266—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by an apertured layer, the apertures going through the whole thickness of the layer, e.g. expanded metal, perforated layer, slit layer regular cells B32B3/12
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/02—Loudspeakers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R7/00—Diaphragms for electromechanical transducers; Cones
- H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
- H04R7/04—Plane diaphragms
- H04R7/06—Plane diaphragms comprising a plurality of sections or layers
- H04R7/10—Plane diaphragms comprising a plurality of sections or layers comprising superposed layers in contact
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Ceramic Engineering (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses an MEMS transducer, which comprises a substrate, an insulating layer, a second film layer, a sacrificial layer and a first film layer which are sequentially stacked from bottom to top; through holes are respectively formed in the middle of the substrate, the insulating layer and the sacrificial layer; one of them one deck of first rete and second rete is the compressive stress membrane, and the other deck is the tensile stress membrane, and the outward bending is followed to compressive stress membrane pressure release, and forms the cavity structure between the tensile stress membrane, and compressive stress membrane central point puts and sets up the release hole, and tensile stress membrane middle part sets up the release hole. According to the invention, the softer film layer adopts the compressive stress film to replace the original tensile stress film, after the sacrificial layer between the two film layers is released, the softer film naturally bulges under the action of the compressive stress, and a larger distance is naturally formed between the softer film and the harder film. By adopting the design of the invention, a larger distance can be formed between the two films by using the thinner sacrificial layer, and the problems of warping and high cost caused by the thick sacrificial layer can be avoided.
Description
Technical Field
The invention relates to a micro-electro-mechanical system, in particular to a micro-electromechanical system (MEMS) transducer.
Background
MEMS, i.e. Micro Electro Mechanical Systems (MEMS), is a leading-edge technology of multidisciplinary crossing developed on the basis of microelectronic technology, and through more than forty years of development, MEMS technology is gradually mature and enters into the commercial field. With the maturity of the MEMS technology and the reduction of the cost, the application of the MEMS product is more and more popular.
One commonly used MEMS transducer is based on the principle of providing an insulating layer between two membranes, each of which is connected to an electrode, thus forming a capacitor. In the double-layer film structure, one film is soft and the other film is hard, when the pressure applied to the film changes, the soft film deforms, the capacitance value of the capacitor changes, and the conversion from mechanical energy to electric energy is realized. Such transducers may be used as sound pick-up devices for picking up sound, i.e. microphones; it can also be used as a pressure sensor for detecting pressure, and as a sensor for detecting other signals. In order to realize such a capacitor structure, it is common practice to form a sacrificial layer between two films, and then release the sacrificial layer by chemical reaction. Such a sacrificial layer is usually made of thicker silicon dioxide, because if it is thinner, the distance between the two layers of the capacitor structure is too small, and when the input signal is slightly larger, the two layers may be attracted together, and the effect of the capacitor is lost. To perform this function, a thicker insulating layer needs to be provided between the two film layers. The thicker insulating layer has long production time and high cost on one hand; on the other hand, the wafer is easily warped and deformed due to the thick sacrificial layer on the surface of the wafer, and the wafer is easily broken or cannot be picked up by equipment in the production process, so that the production is not facilitated.
Disclosure of Invention
The invention aims to: a MEMS transducer is provided, a larger distance can be formed between two films by using a thinner sacrificial layer, and the problems of warping and high cost caused by a thick sacrificial layer can be avoided.
The technical scheme of the invention is as follows:
an MEMS transducer comprises a substrate, an insulating layer, a second film layer, a sacrificial layer and a first film layer which are sequentially stacked from bottom to top; through holes are respectively formed in the middle of the substrate, the insulating layer and the sacrificial layer; one of them one deck of first rete and second rete is the compressive stress membrane, and the other deck is the tensile stress membrane, and the outward bending is followed to compressive stress membrane pressure release, and forms the cavity structure between the tensile stress membrane, and compressive stress membrane central point puts and sets up the release hole, and tensile stress membrane middle part sets up the release hole.
Preferably, the first film layer is a compressive stress film, and the second film layer is a tensile stress film; the first film layer is bent upwards, and a plurality of bulges are arranged on the lower surface of the first film layer.
Preferably, the first film layer is a tensile stress film, and the second film layer is a compressive stress film; the lower surface of the first film layer is provided with a plurality of bulges, and the second film layer is bent downwards.
Preferably, the through hole in the middle of the base body penetrates through the base body to form the back cavity.
Preferably, the insulating layer is located above the substrate and below the capacitor structure formed by the first film layer and the second film layer, and is used for isolating the electrical connection between the capacitor structure and the substrate.
Preferably, the first film layer and the second film layer are respectively provided with a first isolation groove and a second isolation groove to form patterns on the corresponding film layers.
Preferably, the MEMS transducer further comprises a first metal electrode, a second metal electrode; the first metal electrode is connected with the first film layer and used for leading out the first film layer; and the second metal electrode is connected with the second film layer through the sacrificial layer and is used for leading out the second film layer.
Preferably, the first film layer and the second film layer are formed by adopting precipitated polysilicon and performing ion implantation doping; and annealing to adjust the stress of the first and second films and activate the implanted ions.
Preferably, the sacrificial layer adopts a release process, and the sacrificial layer in the middle is etched away to form a cavity.
The invention has the advantages that:
according to the MEMS transducer, the soft film adopts the compressive stress film to replace the original tensile stress film, after the sacrificial layer between the two films is released, the soft film naturally protrudes under the action of the compressive stress, and a larger distance is naturally formed between the soft film and the hard film. By adopting the design of the invention, a larger distance can be formed between the two films by using the thinner sacrificial layer, and the problems of warping and high cost caused by the thick sacrificial layer can be avoided.
Drawings
The invention is further described with reference to the following figures and examples:
fig. 1 is a schematic structural view of a MEMS transducer of embodiment 1;
FIG. 2 is a schematic representation of the growth of an insulating layer on the substrate of example 1;
FIG. 3 is a deposition of a second film layer on the insulating layer of example 1;
FIG. 4 is a diagram of a second film layer of example 1 with photolithography and etching;
FIG. 5 is a deposition of a sacrificial layer on the second film layer of example 1;
FIG. 6 is a first film deposited on the sacrificial layer of example 1;
FIG. 7 is a schematic diagram of a photolithography etch performed on the first film layer of example 1;
FIG. 8 is a schematic view showing a through-hole formed at one end of the sacrificial layer according to example 1;
FIG. 9 is a schematic view showing the fabrication of a metal electrode on two layers of film according to example 1;
FIG. 10 is a fabrication of a back cavity of example 1;
FIG. 11 is a schematic structural view of a MEMS transducer of embodiment 2;
FIG. 12 is a schematic representation of the growth of an insulating layer on the substrate of example 2;
FIG. 13 is a deposition of a second film layer on the insulating layer of example 2;
FIG. 14 is a diagram of a second film layer of example 2 with photolithography and etching;
FIG. 15 is a deposition of a sacrificial layer on the second film layer of example 2;
FIG. 16 is a deposition of a first film layer on the sacrificial layer of example 2;
FIG. 17 is a schematic view of a first film layer of example 2 with a lithographic etch;
FIG. 18 is a view showing that a via hole is formed at one end of the sacrificial layer of example 2;
FIG. 19 is a schematic view showing the fabrication of a metal electrode on two layers of film according to example 2;
fig. 20 is a fabrication back cavity of example 2.
Detailed Description
Example 1
As shown in fig. 1, the MEMS transducer of the present embodiment includes a substrate 1, an insulating layer 2, a second film layer 3, a sacrificial layer 4, and a first film layer 5, which are sequentially stacked from bottom to top; the first film layer 5 is a compressive stress film, the second film layer 3 is a tensile stress film, and the compressive stress film is bent upwards after pressure is released and forms a cavity structure 9 with the tensile stress film. A first metal electrode 6 is arranged on the first film layer 5, and a second metal electrode 7 is arranged on the second film layer 3. The specific manufacturing process is as follows.
1. Firstly, a silicon substrate is used as a base 1, a layer of silicon dioxide is grown on the silicon substrate to be used as an insulating layer 2, and the silicon substrate is shown in figure 2;
2. depositing a layer of polysilicon on the insulating layer 2 and performing ion implantation doping to form a second film layer 3, as shown in fig. 3;
3. performing photolithography and etching on the second film layer 3 to form a second isolation trench 31 and a release hole 32, and forming a desired second film layer pattern, as shown in fig. 4;
4. depositing silicon dioxide on the second film layer 3 as a sacrificial layer 4; meanwhile, photoetching and corrosion are carried out on the sacrificial layer 4 to form small pits, as shown in FIG. 5;
5. depositing a layer of polycrystalline silicon on the sacrificial layer 4 and performing ion implantation doping to obtain a first film layer 5; filling polysilicon into the pits formed in the previous step to form protrusions 52, as shown in fig. 6;
6. annealing to adjust the stress of the first film 5 and the second film 3 and activate the implanted ions;
7. performing photolithography corrosion on the first film layer 5 to form a first isolation trench 51 and a gas release hole 53, and forming a required first film layer pattern, as shown in fig. 7;
8. performing photolithography corrosion on one end of the sacrificial layer 4 to form a through hole 41 exposing the second film layer 3, as shown in fig. 8;
9. sputtering a layer of metal on the second film layer 3 at one end of the first film layer 5 and the through hole 41 respectively and performing photoetching corrosion to form a first metal electrode 6 and a second metal electrode 7 as shown in fig. 9;
10. thinning the matrix 1 to 400 um;
11. photoetching and corroding the back surface of the substrate 1, and corroding the middle part of the substrate 1 to a depth of 400um until the insulating layer 2 is exposed to form a back cavity 11, as shown in fig. 10;
12. by using a release process, the sacrificial layer 3 in a specific region is etched away to form a cavity structure 9, and finally the MEMS transducer is formed, as shown in fig. 1.
Example 2
As shown in fig. 11, the MEMS transducer of the present embodiment includes a substrate 1, an insulating layer 2, a second film layer 3, a sacrificial layer 4, and a first film layer 5, which are sequentially stacked from bottom to top; the first film layer 5 is a tensile stress film, the second film layer 3 is a compressive stress film, and the compressive stress film bends downwards after pressure is released and forms a cavity structure 9 with the tensile stress film. A first metal electrode 6 is arranged on the first film layer 5, and a second metal electrode 7 is arranged on the second film layer 3. The specific manufacturing process is as follows.
1. Firstly, a silicon substrate is used as a base 1, and a layer of silicon dioxide is grown on the silicon substrate to be used as an insulating layer 2, as shown in fig. 12;
2. depositing a layer of polysilicon on the insulating layer 2 and performing ion implantation doping to form a second film layer 3, as shown in fig. 13;
3. performing photolithography and etching on the second film layer 3 to form a second isolation trench 31 and a gas release hole 32, and forming a required second film layer pattern, as shown in fig. 14;
4. depositing silicon dioxide on the second film layer 3 as a sacrificial layer 4; meanwhile, photoetching and corrosion are carried out on the sacrificial layer 4 to form small pits, as shown in FIG. 15;
5. depositing a layer of polycrystalline silicon on the sacrificial layer 4 and performing ion implantation doping to obtain a first film layer 5; polysilicon is filled into the pits formed in the previous step to form bumps 52, as shown in fig. 16;
6. annealing treatment is carried out to adjust the stress of the first film layer 5 and the second film layer 3 and activate the implanted ions;
7. performing photolithography etching on the first film layer 5 to form a first isolation trench 51 and a release hole 53, and forming a desired first film layer pattern, as shown in fig. 17;
8. performing photolithography etching on one end of the sacrificial layer 4 to form a through hole 41 exposing the second film layer 3, as shown in fig. 18;
9. sputtering a layer of metal on the second film 3 at one end of the first film 5 and the through hole 41 respectively and performing photolithography corrosion to form a first metal electrode 6 and a second metal electrode 7 as shown in fig. 19;
10. thinning the matrix 1 to 400 um;
11. photoetching and corroding the back surface of the substrate 1, and corroding the middle part of the substrate 1 to a depth of 400um until the insulating layer 2 is exposed to form a back cavity 11, as shown in fig. 20;
12. by using a release process, the sacrificial layer 3 in a specific region is etched away to form a cavity structure 9, and finally the MEMS transducer is formed, as shown in fig. 11.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose of the embodiments is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All modifications made according to the spirit of the main technical scheme of the invention are covered in the protection scope of the invention.
Claims (9)
1. An MEMS transducer is characterized by comprising a substrate, an insulating layer, a second film layer, a sacrificial layer and a first film layer which are sequentially stacked from bottom to top; through holes are respectively formed in the middle of the substrate, the insulating layer and the sacrificial layer; one of them one deck of first rete and second rete is the compressive stress membrane, and the other deck is the tensile stress membrane, and the outward bending is followed to compressive stress membrane pressure release, and forms the cavity structure between the tensile stress membrane, and compressive stress membrane central point puts and sets up the release hole, and tensile stress membrane middle part sets up the release hole.
2. A MEMS transducer as claimed in claim 1 wherein the first membrane layer is a compressively stressed membrane and the second membrane layer is a tensile stressed membrane; the first film layer is bent upwards, and a plurality of bulges are arranged on the lower surface of the first film layer.
3. A MEMS transducer as claimed in claim 1 wherein the first membrane layer is a tensile stressed membrane and the second membrane layer is a compressive stressed membrane; the lower surface of the first film layer is provided with a plurality of bulges, and the second film layer is bent downwards.
4. A MEMS transducer as claimed in claim 2 or claim 3 wherein the through hole in the central portion of the substrate extends through the substrate to form a back cavity.
5. A MEMS transducer as claimed in claim 2 or claim 3 wherein the insulating layer is located above the substrate and below the capacitive structure formed by the first and second layers, for isolating the electrical connection between the capacitive structure and the substrate.
6. The MEMS transducer as claimed in claim 2 or 3, wherein the first and second membrane layers are respectively provided with a first and a second isolation trench to form a pattern on the corresponding membrane layer.
7. A MEMS transducer as claimed in claim 2 or claim 3 further comprising a first metal electrode, a second metal electrode; the first metal electrode is connected with the first film layer and used for leading out the first film layer; and the second metal electrode is connected with the second film layer through the sacrificial layer and is used for leading out the second film layer.
8. The MEMS transducer according to claim 2 or 3, wherein the first film layer and the second film layer are formed by adopting precipitated polysilicon and doping through ion implantation; and annealing to adjust the stress of the first and second films and activate the implanted ions.
9. The MEMS transducer of claim 8, wherein the sacrificial layer is etched away in the middle using a release process to form a cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210390737.3A CN114630252A (en) | 2022-04-14 | 2022-04-14 | MEMS transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210390737.3A CN114630252A (en) | 2022-04-14 | 2022-04-14 | MEMS transducer |
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| Publication Number | Publication Date |
|---|---|
| CN114630252A true CN114630252A (en) | 2022-06-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210390737.3A Pending CN114630252A (en) | 2022-04-14 | 2022-04-14 | MEMS transducer |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1960581A (en) * | 2005-11-03 | 2007-05-09 | 青岛歌尔电子有限公司 | Capacitance type silicon microphone |
| CN202153165U (en) * | 2011-07-14 | 2012-02-29 | 无锡芯感智半导体有限公司 | Capacitive MEMS (Micro-Electro-Mechanical System) pressure sensor |
| CN204681590U (en) * | 2015-05-29 | 2015-09-30 | 歌尔声学股份有限公司 | MEMS microphone, pressure sensor integrated morphology |
| CN105246012A (en) * | 2014-05-30 | 2016-01-13 | 无锡华润上华半导体有限公司 | Mems microphone |
| CN107465983A (en) * | 2016-06-03 | 2017-12-12 | 无锡华润上华科技有限公司 | Mems microphone and preparation method thereof |
| US20190047849A1 (en) * | 2017-08-09 | 2019-02-14 | Db Hitek Co., Ltd. | Mems microphone and method of manufacturing the same |
| CN111107473A (en) * | 2019-12-13 | 2020-05-05 | 歌尔股份有限公司 | Integrated structure and method of MIC and pressure sensor |
-
2022
- 2022-04-14 CN CN202210390737.3A patent/CN114630252A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1960581A (en) * | 2005-11-03 | 2007-05-09 | 青岛歌尔电子有限公司 | Capacitance type silicon microphone |
| CN202153165U (en) * | 2011-07-14 | 2012-02-29 | 无锡芯感智半导体有限公司 | Capacitive MEMS (Micro-Electro-Mechanical System) pressure sensor |
| CN105246012A (en) * | 2014-05-30 | 2016-01-13 | 无锡华润上华半导体有限公司 | Mems microphone |
| CN204681590U (en) * | 2015-05-29 | 2015-09-30 | 歌尔声学股份有限公司 | MEMS microphone, pressure sensor integrated morphology |
| CN107465983A (en) * | 2016-06-03 | 2017-12-12 | 无锡华润上华科技有限公司 | Mems microphone and preparation method thereof |
| US20190047849A1 (en) * | 2017-08-09 | 2019-02-14 | Db Hitek Co., Ltd. | Mems microphone and method of manufacturing the same |
| CN111107473A (en) * | 2019-12-13 | 2020-05-05 | 歌尔股份有限公司 | Integrated structure and method of MIC and pressure sensor |
Non-Patent Citations (1)
| Title |
|---|
| 田民波等: "薄膜科学与技术手册 上册", 31 March 1991, 机械工业出版社, pages: 142 - 144 * |
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