CN114629460A - Acoustic wave resonator and filter with temperature compensation layer, and electronic device - Google Patents
Acoustic wave resonator and filter with temperature compensation layer, and electronic device Download PDFInfo
- Publication number
- CN114629460A CN114629460A CN202011435645.XA CN202011435645A CN114629460A CN 114629460 A CN114629460 A CN 114629460A CN 202011435645 A CN202011435645 A CN 202011435645A CN 114629460 A CN114629460 A CN 114629460A
- Authority
- CN
- China
- Prior art keywords
- acoustic wave
- resonator
- electrode
- wave resonator
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 57
- 239000000463 material Substances 0.000 description 15
- 239000013078 crystal Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052762 osmium Inorganic materials 0.000 description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/56—Monolithic crystal filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
Abstract
The invention provides an acoustic wave resonator, a filter and electronic equipment with a temperature compensation layer, wherein a parameter of an electrode piezoelectric ratio is introduced, a calculation mode is given, and the resonator can have better performance when the electrode piezoelectric ratio value meets a certain condition due to the arrangement of each layer of the resonator.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to an acoustic wave resonator with a temperature compensation layer, a filter and electronic equipment.
Background
The acoustic wave resonator is a basic unit forming a bulk acoustic wave filter, and the basic structure of the acoustic wave resonator comprises a piezoelectric film, a bottom electrode and a top electrode which clamp the piezoelectric film to form a piezoelectric stack structure; and an acoustic reflection unit located under the bottom electrode. The overlapping regions between the acoustic reflection unit, the bottom electrode, the top electrode, and the piezoelectric film form an active region in which the acoustic wave resonator operates. When a radio frequency signal is applied between the electrodes, the piezoelectric film vibrates due to the inverse piezoelectric effect, generating an acoustic wave that propagates in a direction perpendicular to the electrode surfaces and is reflected at the upper and lower interfaces.
Some acoustic resonators also have a temperature compensation layer that is added to the stack of the acoustic resonator in one or more layers of a material that has a sign opposite to the temperature coefficient of frequency of the piezoelectric layer itself (e.g., aluminum nitride has a negative temperature coefficient of frequency, and silicon dioxide has a positive temperature coefficient of frequency), so as to cancel or partially cancel the frequency drift of the resonator due to temperature changes. For a resonator with a temperature compensation layer and a specific frequency, different electromechanical coupling coefficients Kt can be obtained by adjusting the proportion of an upper electrode, a lower electrode and a piezoelectric layer, under the premise of not changing the doping concentration of the piezoelectric layer, the Kt has a certain optimal range, and beyond the range, the quality factor Q value of the resonator can be seriously dropped. There is therefore a need for a suitable way of adjusting the layers of an acoustic resonator to achieve the best possible optimization of performance.
Disclosure of Invention
In view of the above, the present invention provides an acoustic wave resonator with a temperature compensation layer, a filter, and an electronic device, where the acoustic wave resonator has a superior performance.
The invention provides the following technical scheme:
an acoustic wave resonator with a temperature compensation layer, the electrode piezoelectric ratio of the acoustic wave resonator is larger than 0.5, and the electrode piezoelectric ratio is calculated according to the following formula: electrode piezoelectric ratio (e × TB + T2+ n × T1)/T3; and: TB-T5 + a × T4+ b × T6+ c × T7+ d × T8; a is V/Va, b is V/Vb, c is V/Vc, d is V/Vd; wherein: t1 represents the thickness of the dielectric layer above the upper electrode of the acoustic wave resonator; t2 represents the thickness of the upper electrode of the acoustic wave resonator; t3 represents the thickness of the piezoelectric layer of the acoustic wave resonator; t4 represents the thickness of the intermediate electrode of the acoustic wave resonator; t5 represents the thickness of the bottom electrode of the acoustic wave resonator; t6 represents the thickness of the etching barrier layer of the temperature compensation layer of the acoustic wave resonator; t7 represents the thickness of the temperature compensation layer of the acoustic wave resonator; t8 represents the thickness of the seed layer of the acoustic wave resonator; the influence rates of the middle electrode of the acoustic wave resonator, the etching barrier layer of the temperature compensation layer, the temperature compensation layer and the seed layer on the resonance frequency of the resonator are Va nm/MHz, Vb nm/MHz, Vc nm/MHz and Vd nm/MHz respectively; the influence rate of the bottom electrode on the resonant frequency of the resonator is V nm/MHz; n-V2/V1, e-V2/V, where V1 represents the rate of influence of the thickness of the dielectric layer over the upper electrode on the resonant frequency of the resonator, and V2 represents the rate of influence of the thickness of the upper electrode on the resonant frequency of the resonator.
The 4 layers of the dielectric layer above the upper electrode, the middle electrode, the etching barrier layer of the temperature compensation layer and the seed layer are unnecessary, and are not provided, or only one or more layers are provided. When a certain layer is absent, the calculation formula is unchanged, and the thickness of the layer in the formula is 0.
Optionally, the electrode piezoelectric ratio is less than 1.5.
Optionally, one or more of T1, T4, T6, and T8 takes a value of 0.
Optionally, the TB further satisfies the following relationship: TB ═ e × m (T2+ n × T1), where: m is 0.7 to 1.3.
A filter comprising an acoustic wave resonator according to the present invention.
An electronic device comprising an acoustic wave resonator as described in the present invention, or comprising a filter as described in the present invention.
According to the technical scheme of the invention, a parameter of the electrode piezoelectric ratio is introduced and a calculation mode is given, and when the arrangement of each layer of the resonator enables the electrode piezoelectric ratio to meet a certain condition, the resonator can have better performance.
Drawings
For purposes of illustration and not limitation, the present invention will now be described in accordance with its preferred embodiments, particularly with reference to the accompanying drawings, in which:
FIG. 1 is a schematic cross-sectional view of an acoustic wave resonator in connection with an embodiment of the present invention;
FIG. 2 is an enlarged schematic view of a portion (within the dashed box) of FIG. 1;
FIG. 3 is a cross-sectional schematic view of another acoustic resonator in connection with an embodiment of the present invention;
FIG. 4 is a schematic illustration of the relationship of the electrode piezoelectric ratio to the Q value according to an embodiment of the present invention;
fig. 5 is a graph of Kt varied by doping AlN with Sc at an electrode piezo ratio of 1 in accordance with an embodiment of the present invention.
Detailed Description
The embodiments of the present invention will be explained below with reference to the drawings. FIG. 1 is a schematic cross-sectional view of an acoustic wave resonator in connection with an embodiment of the present invention; fig. 2 is an enlarged schematic view of a portion (within a dashed box) of fig. 1. The parts in fig. 1 and 2 are explained as follows:
10: the substrate is made of monocrystalline silicon, gallium arsenide, sapphire, quartz and the like;
20: the acoustic mirror can be a cavity, and a Bragg reflection layer and other equivalent forms can also be adopted. As used herein, is a cavity;
30: the bottom electrode is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the metals or an alloy thereof;
40: the interlayer electrode or the middle electrode is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the metals or an alloy thereof;
50: the piezoelectric layer can be a single crystal piezoelectric material, and can be selected from the following: a material such as single crystal aluminum nitride, single crystal gallium nitride, single crystal lithium niobate, single crystal lead zirconate titanate (PZT), single crystal potassium niobate, single crystal quartz film, or single crystal lithium tantalate, and may be a polycrystalline piezoelectric material (corresponding to a single crystal, a non-single crystal material), optionally, such as polycrystalline aluminum nitride, zinc oxide, PZT, or the like, and may be a rare earth element doped material containing a certain atomic ratio of the above materials, for example, doped aluminum nitride containing at least one rare earth element such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), erbium (Ho), erbium (holmium), thulium (Tm), ytterbium (Yb), lutetium (Lu), or the like;
60: the upper electrode is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the metals or an alloy thereof;
70: the upper dielectric layer of the upper electrode is made of AlN, SiN, SiO2 and the like;
80: the etching barrier layer of the temperature compensation layer can be made of materials such as aluminum nitride, zinc oxide, PZT and the like and contains rare earth element doping materials with certain atomic ratios of the materials;
81: the temperature compensation layer can be made of materials with a positive temperature coefficient such as SiO 2;
82: the seed layer can be selected from materials such as aluminum nitride, zinc oxide, PZT and the like and contains rare earth element doping materials with certain atomic ratios of the materials.
In the embodiment, a parameter of the electrode piezoelectric ratio is introduced, and a corresponding calculation mode is given. For convenience of description, the relevant parameters will be described first. Referring to fig. 1 and 2, the thickness (unit: nm) parameters of the layers are as follows:
t1: thickness of the upper dielectric layer 70;
t2: the thickness of the upper electrode 60;
t3: the thickness of the piezoelectric layer 50;
t4: the thickness of the intermediate electrode 40;
t5: the thickness of the bottom electrode 30;
t6: thickness of the etch stop layer 80 of the temperature compensation layer;
t7: thickness of the temperature compensation layer 81;
t8: the thickness of seed layer 82.
And introducing coefficients a, b, c and d, wherein a is V/Va, b is V/Vb, c is V/Vc and d is V/Vd. Here, Va, Vb, Vc, Vd are the respective influence rates of the middle electrode 40, the etch stop layer 80 of the temperature compensation layer, the temperature compensation layer 81, and the seed layer 82 of the acoustic wave resonator on the resonance frequency of the resonator, and are expressed in nm/MHz (nanometer per megahertz), and V (nm/MHz) represents the influence rate of the bottom electrode 30 on the resonance frequency of the resonator. And also parameters n and e are introduced, n being V2/V1 and e being V2/V, where V1 represents the rate of influence of the thickness of the dielectric layer 70 over the upper electrode on the resonator resonance frequency and V2 represents the rate of influence of the thickness of the upper electrode 60 on the resonator resonance frequency in nm/MHz.
Finally, the electrode piezoelectric ratio is calculated according to the parameters and the coefficients, and an intermediate parameter TB, namely T5+ a × T4+ b × T6+ c × T7+ d × T8, is added for the sake of simplicity of the expression. The final electrode piezoelectric ratio was calculated according to the following formula: the electrode piezoelectric ratio is (e × TB + T2+ n × T1)/T3.
By selecting a suitable electrode piezoelectric ratio, better resonator performance can be obtained. The following examples are given. Fig. 3 is a schematic cross-sectional view of another acoustic resonator according to an embodiment of the present invention, in which a raised structure 90 is added above the piezoelectric layer, wherein the material may be selected from mo, ru, au, al, mg, w, cu, ti, ir, os, cr, combinations thereof or alloys thereof. An air gap 91 exists between the raised structure 90 and the piezoelectric layer 50. The partial enlargement of the etch stop layer 80, the temperature compensation layer 81 and the seed layer 82 with respect to the temperature compensation layer in fig. 3 can be seen in fig. 2.
Fig. 4 shows experimental results of the 2GHz band corresponding to the structure shown in fig. 3, and fig. 4 is a schematic diagram of the relationship between the piezoelectric ratio of the electrode and the Q value according to the embodiment of the present invention, in which a plurality of horizontal values represent the width d of the protrusion structure 90, and a vertical value represents the variation trend of the Q value.
According to fig. 4, in which the first peak of the Q value with the change of the width d of the convex structure 90 is significantly decreased when the electrode piezoelectric ratio is 0.5; when the electrode piezoelectric ratio is 1.5, the Q value is slightly reduced at the first peak value, but the reduction amplitude is not very large; when the electrode piezoelectric ratio is 1, when the convex structure d is 1um, a peak value exists, the Q value rises firstly and then falls, and the other two ratios obviously have no tendency. The reason for this is that the electrode piezoelectric ratio is out of order, which is optimal when the electrode piezoelectric ratio is 1, and when the ratio is less than 0.5, the performance degradation of the resonator is very serious.
Sometimes, for a given frequency, the target Kt is obtained within a certain range by adjusting the electrode piezoelectric ratio, but the principle is that the ratio complies with the above ratio limit, and the out-of-range problem is solved by other methods, such as introducing doping Sc, and selecting appropriate doping concentration at appropriate ratio to obtain the desired Kt.
For example, at a frequency of 2G HZ, under a condition that a specific temperature drift is satisfied (0 temperature drift), the resonator can obtain 2.1% -4.2% Kt without doping, but when the specific temperature drift is required to be more than 4.2%, doping needs to be introduced, and when a proper doping concentration is selected, the resonator with a relatively high Q value can be obtained while satisfying 0.5< electrode piezoelectric ratio (e × TB + T2+ n × T1)/T3<1.5, and the Kt requirement can also be satisfied, as shown in fig. 5, where fig. 5 is a curve in which AlN is doped with Sc to change Kt when the electrode piezoelectric ratio is 1 according to an embodiment of the present invention. It can be seen from fig. 5 that by varying the doping ratio, Kt can be varied while maintaining the piezoelectric ratio of the electrodes, thus both meeting performance requirements and achieving the desired Kt.
According to the technical scheme of the embodiment of the invention, a parameter of the electrode piezoelectric ratio is introduced and a calculation mode is given, and when the value of the parameter accords with a certain condition due to the arrangement of each layer of the resonator, the resonator can have better performance. The resonator is applied to a filter or other electronic equipment and also contributes to improving the performance of the device or equipment.
The above-described embodiments should not be construed as limiting the scope of the invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions can occur, depending on design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. An acoustic wave resonator with a temperature compensation layer is characterized in that the electrode piezoelectric ratio of the acoustic wave resonator is larger than 0.5, and the electrode piezoelectric ratio is calculated according to the following formula:
electrode piezoelectric ratio (e × TB + T2+ n × T1)/T3;
and:
TB＝T5+a×T4+b×T6+c×T7+d×T8；
a＝V/Va、b＝V/Vb、c＝V/Vc、d＝V/Vd；
wherein:
t1 represents the thickness of the dielectric layer above the upper electrode of the acoustic wave resonator;
t2 represents the thickness of the upper electrode of the acoustic wave resonator;
t3 represents the thickness of the piezoelectric layer of the acoustic wave resonator;
t4 represents the thickness of the intermediate electrode of the acoustic wave resonator;
t5 represents the thickness of the bottom electrode of the acoustic wave resonator;
t6 represents the thickness of the etching barrier layer of the temperature compensation layer of the acoustic wave resonator;
t7 represents the thickness of the temperature compensation layer of the acoustic wave resonator;
t8 represents the thickness of the seed layer of the acoustic wave resonator;
the influence rates of the middle electrode of the acoustic wave resonator, the etching barrier layer of the temperature compensation layer, the temperature compensation layer and the seed layer on the resonance frequency of the resonator are Va nm/MHz, Vb nm/MHz, Vc nm/MHz and Vd nm/MHz respectively;
the influence rate of the bottom electrode on the resonant frequency of the resonator is V nm/MHz;
n-V2/V1, e-V2/V, where V1 represents the rate of influence of the thickness of the dielectric layer over the upper electrode on the resonance frequency of the resonator, and V2 represents the rate of influence of the thickness of the upper electrode on the resonance frequency of the resonator, in nm/MHz.
2. The acoustic resonator according to claim 1, wherein the electrode piezoelectric ratio is less than 1.5.
3. The acoustic resonator according to claim 1 or 2, wherein one or more of T1, T4, T6, T8 takes the value 0.
4. The acoustic resonator according to claim 1 or 2, wherein the TB further satisfies the following relationship: TB ═ e × m (T2+ n × T1), where: m ranges from 0.7 to 1.3.
5. A filter comprising the acoustic wave resonator according to any one of claims 1 to 4.
6. An electronic device comprising the acoustic wave resonator of any one of claims 1 to 4, or comprising the filter of claim 5.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011435645.XA CN114629460A (en) | 2020-12-10 | 2020-12-10 | Acoustic wave resonator and filter with temperature compensation layer, and electronic device |
| PCT/CN2021/136534 WO2022121958A1 (en) | 2020-12-10 | 2021-12-08 | Acoustic wave resonator having temperature compensation layer, and filter and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011435645.XA CN114629460A (en) | 2020-12-10 | 2020-12-10 | Acoustic wave resonator and filter with temperature compensation layer, and electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114629460A true CN114629460A (en) | 2022-06-14 |
Family
ID=81896093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011435645.XA Pending CN114629460A (en) | 2020-12-10 | 2020-12-10 | Acoustic wave resonator and filter with temperature compensation layer, and electronic device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114629460A (en) |
| WO (1) | WO2022121958A1 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6185292B2 (en) * | 2013-06-10 | 2017-08-23 | 太陽誘電株式会社 | Elastic wave device |
| US9929718B1 (en) * | 2016-09-06 | 2018-03-27 | Cindy X. Qiu | Tunable film bulk acoustic resonators and filters with integrated biasing resistors |
| CN107493086B (en) * | 2017-09-04 | 2023-08-15 | 杭州左蓝微电子技术有限公司 | Temperature-compensated surface acoustic wave resonator and preparation method thereof |
| CN109039299A (en) * | 2018-07-08 | 2018-12-18 | 邱星星 | Tunable thin film bulk acoustic wave resonator and filter with integrated biasing resistor |
| CN109802646B (en) * | 2018-12-26 | 2023-07-04 | 天津大学 | Resonator and filter with temperature compensation layer |
| CN112054777A (en) * | 2020-05-09 | 2020-12-08 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator assembly, filter, electronic apparatus, and method of manufacturing bulk acoustic wave resonator assembly |
-
2020
- 2020-12-10 CN CN202011435645.XA patent/CN114629460A/en active Pending
-
2021
- 2021-12-08 WO PCT/CN2021/136534 patent/WO2022121958A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022121958A1 (en) | 2022-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9219464B2 (en) | Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with multiple dopants | |
| US9455681B2 (en) | Bulk acoustic wave resonator having doped piezoelectric layer | |
| US9450561B2 (en) | Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with varying amounts of dopant | |
| CN109802646B (en) | Resonator and filter with temperature compensation layer | |
| US20070284971A1 (en) | Electronic device | |
| JP4327942B2 (en) | Thin film piezoelectric element | |
| US9679765B2 (en) | Method of fabricating rare-earth doped piezoelectric material with various amounts of dopants and a selected C-axis orientation | |
| CN104953976B (en) | Include the acoustic resonator of sound redistributing layer | |
| US10340885B2 (en) | Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes | |
| JP3944372B2 (en) | Piezoelectric thin film vibrator and frequency variable resonator using the same | |
| US20140246305A1 (en) | Method of fabricating rare-earth element doped piezoelectric material with various amounts of dopants and a selected c-axis orientation | |
| US20170288121A1 (en) | Acoustic resonator including composite polarity piezoelectric layer having opposite polarities | |
| JP2018014643A (en) | Piezoelectric thin-film resonator, filter, duplexer, and method of manufacturing piezoelectric thin-film resonator | |
| WO2022068562A1 (en) | Bulk acoustic resonator, doping concentration determination method, filter, and electronic device | |
| CN111193489A (en) | Bulk acoustic wave resonator, filter, and electronic device | |
| US20210297063A1 (en) | Filter with volume acoustic resonators | |
| CN114389559A (en) | Bulk acoustic wave resonator, bulk acoustic wave resonator component, filter, and electronic device | |
| US11558031B2 (en) | Film bulk acoustic resonator and method of manufacturing the same | |
| CN111384909A (en) | Bulk acoustic wave resonator, filter, and electronic device having asymmetric electrode thickness | |
| Zhao et al. | 15-ghz epitaxial aln fbars on sic substrates | |
| WO2020098478A1 (en) | Bulk acoustic wave resonator, filter, and electronic device | |
| WO2024087628A1 (en) | Bulk acoustic wave resonator for selecting angle of protruding structure to improve performance | |
| CN114629460A (en) | Acoustic wave resonator and filter with temperature compensation layer, and electronic device | |
| WO2023030359A1 (en) | Bulk acoustic resonator comprising gap electrode, filter and electronic device | |
| WO2022068552A1 (en) | Bulk acoustic resonator, doping concentration determination method, filter, and electronic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |