WO2024087628A1 - Bulk acoustic wave resonator for selecting angle of protruding structure to improve performance - Google Patents

Bulk acoustic wave resonator for selecting angle of protruding structure to improve performance Download PDF

Info

Publication number
WO2024087628A1
WO2024087628A1 PCT/CN2023/097300 CN2023097300W WO2024087628A1 WO 2024087628 A1 WO2024087628 A1 WO 2024087628A1 CN 2023097300 W CN2023097300 W CN 2023097300W WO 2024087628 A1 WO2024087628 A1 WO 2024087628A1
Authority
WO
WIPO (PCT)
Prior art keywords
resonator
protruding structure
frequency
region
inner end
Prior art date
Application number
PCT/CN2023/097300
Other languages
French (fr)
Chinese (zh)
Inventor
郑志强
张巍
张兰月
马晓丹
黄源清
季艳丽
蒋兴勇
郝龙
Original Assignee
诺思(天津)微系统有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 诺思(天津)微系统有限责任公司 filed Critical 诺思(天津)微系统有限责任公司
Publication of WO2024087628A1 publication Critical patent/WO2024087628A1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material

Definitions

  • the embodiments of the present invention relate to the semiconductor field, and in particular to a bulk acoustic wave resonator and a manufacturing method thereof, a filter having the resonator, and an electronic device.
  • FBAR film bulk acoustic resonator
  • a protruding structure is usually set at the edge of the resonance area or the effective area to make the acoustic mismatch between the main resonator area and the boundary, reduce energy leakage, and improve the performance of the FBAR.
  • the introduction of the protruding structure causes a bulge in the impedance curve below the parasitic region (spurious) in the frequency-impedance curve of the resonator, which will reduce the performance of the resonator and thus affect the passband performance of the filter.
  • the present invention is proposed to alleviate or solve at least one aspect of the above-mentioned problems in the prior art.
  • a bulk acoustic wave resonator comprising:
  • a piezoelectric layer is disposed between the bottom electrode and the top electrode
  • a protruding structure is provided at the edge of the effective area of the resonator, and the angle of the inner end of the protruding structure is in the range of 25°-60°.
  • An embodiment of the present invention also relates to a method for improving the performance of a bulk acoustic wave resonator, comprising the steps of: setting a protruding structure on the edge of the effective area of the resonator, and selecting the angle of the inner end of the protruding structure so that: the frequency-impedance curve of the resonator is within a region of 30 MHz starting from the end of the parasitic region or within a range of 60-80 MHz below the series resonance frequency, and the difference between the highest value and the lowest value of the impedance is within a range of 2 times the lowest value, or the bulge frequency point in the frequency-impedance curve of the resonator is outside the region of 30 MHz starting from the end of the parasitic region.
  • An embodiment of the present invention further relates to a filter, comprising the above-mentioned BAW resonator.
  • An embodiment of the present invention also relates to an electronic device, comprising the above-mentioned filter or the above-mentioned resonator.
  • FIG1A is a schematic cross-sectional view of a conventional BAW resonator, wherein no protruding structure is provided;
  • FIG1B is a schematic cross-sectional view of a known bulk acoustic wave resonator, in which a protruding structure is provided;
  • FIG. 2A is a frequency-resonance curve of the BAW resonator in FIG. 1A ;
  • FIG. 2B is a frequency-resonance curve of the BAW resonator in FIG. 1B ;
  • FIG. 3 is a schematic cross-sectional view of a BAW resonator according to an exemplary embodiment of the present invention, wherein the angle of the inner end of the protruding structure is specifically specified;
  • FIG4A is a frequency-resonance curve of the BAW resonator in FIG3 , wherein the angle of the inner end of the protruding structure is 50 degrees;
  • FIG4B is a frequency-resonance curve of the BAW resonator in FIG3 , wherein the angle of the inner end of the protruding structure is 40 degrees;
  • FIG5 is an exemplary simulation diagram according to the present invention, showing the relationship between the angle of the inner end of the protruding structure and the performance in the range of 60-80 MHz below the series resonant frequency and the parallel resonant impedance;
  • FIG. 6 to 10 are schematic cross-sectional views of BAW resonators according to different exemplary embodiments of the present invention.
  • the parallel resonant impedance Rp can be improved while the bulge of the frequency-impedance curve below the parasitic region can be moved to the low frequency, so as to improve the performance of the resonator and thus improve the passband performance of the filter.
  • Optional materials include single crystal silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond, etc.
  • Acoustic mirror which can be a cavity, or a Bragg reflection layer or other equivalent forms.
  • the cavity is arranged inside the substrate and in the form of a gap electrode.
  • the cavity can also be located on the upper surface of the substrate.
  • bottom electrode optional materials: molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or composites of the above metals or alloys thereof.
  • the piezoelectric layer may be a single crystal piezoelectric material, such as single crystal aluminum nitride, single crystal gallium nitride, single crystal lithium niobate, single crystal lead zirconate titanate (PZT), single crystal potassium niobate, single crystal quartz film, or single crystal lithium tantalate, etc. It may also be a polycrystalline piezoelectric material (corresponding to a single crystal, a non-single crystal material), such as polycrystalline aluminum nitride, zinc oxide, PZT, etc. It may also be a rare earth element doped with a certain atomic ratio of the above materials.
  • the material for example, can be doped aluminum nitride, which contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.
  • rare earth element such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm
  • Top electrode the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys.
  • the top electrode and the bottom electrode are generally made of the same material, but can also be different.
  • the protruding structure may be made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a combination of the above metals or their alloys, or non-metallic materials such as AlN, SiN, SiO2 , etc.
  • Edge layer structure the material includes air or a functional material for reflecting sound waves, wherein the acoustic impedance of the functional material is less than or equal to the acoustic impedance of air.
  • Top electrode thickening layer the material of which can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys.
  • a passivation layer or a process layer which is disposed on the top electrode of the resonator and may be a mass adjustment load or a passivation layer, and the material thereof may be a dielectric material, such as AlN, SiN, Al 2 O 3 , SiO 2 and the like.
  • a passivation layer or a process layer which is disposed on the top electrode thickening layer 60 and whose material may be a dielectric material, such as AlN, SiN, Al 2 O 3 , SiO 2 and the like.
  • FIG. 1A is a cross-sectional schematic diagram of a known BAW resonator, in which no protruding structure is provided.
  • FIG. 2A is a frequency-resonance curve of the BAW resonator in FIG. 1A
  • the parallel resonant impedance Rp is the highest point of the frequency-resonance curve, and its value is assumed to be 1.
  • FIG. 1B is a cross-sectional schematic diagram of a known bulk acoustic wave resonator, in which a protruding structure is provided
  • FIG. 2B is a frequency-resonance curve of the bulk acoustic wave resonator in FIG. 1B
  • the parallel resonant impedance Rp can be increased to 1.5 at most, that is, the parallel impedance of the resonator with a protruding structure can be increased by 50% at most compared to the resonator without a protruding structure.
  • FIG. 2B Relative to the structure of FIG. 1A , in FIG. 2B , the parallel resonant impedance Rp can be increased to 1.5 at most, that is, the parallel impedance of the resonator with a protruding structure can be increased by 50% at most compared to the resonator without a protruding structure.
  • FIG. 1B is a cross-sectional schematic diagram of a known bulk acou
  • Fig. 3 is a schematic cross-sectional view of a BAW resonator according to an exemplary embodiment of the present invention, in which the angle of the inner end of the protruding structure is specifically specified.
  • the angle of the inner end of the protruding structure 51 such as referring to the angle ⁇ of the protruding structure 51 in Fig. 3
  • the position of the bulge closer to the parasitic region can be appropriately changed to move it away from the series resonant frequency Fs.
  • position A is the bulge farthest from the series resonant frequency Fs (the second bulge)
  • position B is the bulge near the series resonant frequency Fs (the first bulge) or the bulge frequency point
  • position C is the end position of the parasitic area
  • position D is the series resonant frequency Fs
  • position E is the parallel resonant frequency Fp.
  • FIG4A is a frequency-resonance curve of the BAW resonator in FIG3 , wherein the angle ⁇ of the protruding structure 51 is 50°.
  • A' to E' have the same meaning as A to E. It can be seen that: as the angle of the protruding structure 51 increases, the positions of A, C, D, and E remain unchanged, but the position B (the first bulge) moves to the left relative to FIG2B (in the opposite direction of the series resonance frequency Fs) to the position B', and the corresponding curve between BC changes from the original steeper curve to the smoother curve between B' and C'.
  • FIG4B is a frequency-resonance curve of the BAW resonator in FIG3 , wherein the angle ⁇ of the protruding structure 51 is 40°.
  • A' to E' have the same meaning as A to E. It can be seen that: as the angle of the protruding structure 51 increases, the positions of A, C, D, and E remain unchanged, but the position B (the first bulge) moves to the left relative to FIG2B (in the opposite direction of the series resonance frequency Fs) to the position B', and the corresponding curve between BC changes from the original steeper curve to the smoother curve between B' and C'.
  • the 30MHz region starting from the end of the parasitic region (point C') in the frequency-impedance curve, that is, the interval marked in the box is defined as Qsw1
  • the performance of the interval of 60-80MHz below the series resonant frequency Fs is defined as Qsw1 as shown in the positions marked in the boxes of Figures 4A and 4B.
  • the steeper the curve or the higher the overall curve, the lower the Qsw1, and the corresponding resonator performance is poor; the smoother the curve or the lower the overall curve, the higher the Qsw1, and the corresponding resonator performance is better.
  • the higher the parallel resonant frequency Rp the better the resonator performance.
  • the frequency-impedance curve of the resonator is made to have a difference between the highest value and the lowest value of the impedance in the region of 30MHz starting from the end of the parasitic region or in the interval of 60-80MHz below the series resonant frequency Fs within the range of 2 times the lowest value. It can be considered that the closer the line between the highest point and the lowest point is to the horizontal line, the flatter it is, and the flatter the performance of the resonator is, the better.
  • FIG5 is an exemplary simulation diagram according to the present invention, showing the relationship between the angle of the inner end of the protruding structure and the performance in the range of 60-80 MHz below the series resonant frequency and the parallel resonant impedance.
  • the angle ⁇ of the protruding structure 51 is usually in the range of 20°-80°.
  • the range of 25°-60° is used, which is conducive to obtaining higher performance in the region of 30 MHz starting from the end of the parasitic region or in the range of 60-80 MHz below the series resonant frequency, thereby improving the performance of the resonator.
  • the angle ⁇ of the protruding structure 51 can be in the range of 35°-50°.
  • the parallel resonant frequency Rp and the performance in the region of 30 MHz starting from the end of the parasitic region, for example, the range of 60-80 MHz below the series resonant frequency are guaranteed, so that the overall performance is better. That is, at this time: it can ensure a higher parallel resonant frequency Rp and also ensure that Qsw1 is not significantly reduced.
  • the corresponding first bulge that is, the position of B' in Figure 4A, is far away from the series resonant frequency Fs, so that the curve at the end of the parasitic region (the position marked by the box) is generally lower, which is beneficial to ensure the passband performance of the filter.
  • the protruding structure 51 may also cooperate with an additional structure to improve the performance of the resonator.
  • Figures 6 to 10 are cross-sectional schematic diagrams of BAW resonators according to different exemplary embodiments of the present invention.
  • the additional structure includes an edge layer structure 52, which is disposed below the protruding structure 51, and the inner end of the edge layer structure 52 is located outside the inner end of the protruding structure 51.
  • the edge layer structure 52 is disposed between the protruding structure 51 and the piezoelectric layer 40. In other embodiments, although not shown, the edge layer structure 52 may also be disposed in the piezoelectric layer.
  • the protruding structure 51 can be disposed between the top electrode 50 and the piezoelectric layer 40, between the piezoelectric layer 40 and the bottom electrode 30, or above the top electrode or below the bottom electrode in the thickness direction of the resonator. In an optional embodiment, the protruding structure 51 can also be disposed in the piezoelectric layer 40.
  • the protrusion structure 51 and the edge layer structure 52 can be arranged adjacent to each other in the thickness direction of the resonator, or can be arranged separately, both of which are within the protection scope of the present invention.
  • the additional structure may include an acoustic impedance mismatching structure such as a concave structure 53 , and the concave structure 53 is located inside the convex structure.
  • the bottom electrode is a gap electrode
  • the gap electrode includes a bottom electrode 30 and a bottom electrode 31, and a gap serving as an acoustic mirror 20 is provided between the bottom electrode 30 and the bottom electrode 31.
  • This is beneficial to reducing the series resonance impedance Rs and the parasitic impedance, and also increases the thickness of the bottom electrode, thereby further improving the performance of the resonator.
  • the top electrode 50 is provided with an electrode thickening layer 54 at the portion outside the inner end of the protruding structure, which is beneficial to reducing the series resonant impedance Rs and the parasitic impedance, and also increases the thickness of the top electrode, thereby further improving the performance of the resonator.
  • edge layer structure 52 is combined with the recessed structure 53.
  • edge layer structure 52 can also be positioned between the raised structure 51 and the piezoelectric layer 40 or in the piezoelectric layer.
  • the present invention also relates to a method for improving the performance of a bulk acoustic wave resonator, that is, a protruding structure is provided at the edge of an effective area of the resonator, and the angle of the inner end of the protruding structure is selected to smooth the frequency-impedance curve of the resonator in the range of 60-80MHz below the series resonance frequency.
  • each numerical range except for explicitly stating that it does not include the endpoint value, can be the endpoint value or the median value of each numerical range, all of which are within the protection scope of the present invention.
  • the terms “up” and “down” are relative to the bottom surface of the base of the resonator.
  • the side close to the bottom surface is the lower side, and the side away from the bottom surface is the upper side.
  • inside and outside refer to the center (i.e., the center of the effective area) of the resonator (the overlapping area of the piezoelectric layer, the top electrode, the bottom electrode, and the acoustic mirror in the thickness direction of the resonator constitutes the effective area) in the lateral direction or radial direction.
  • the side or end of a component close to the center of the effective area is the inside or the inner end, and the side or end of the component far from the center of the effective area is the outside or the outer end.
  • being inside the position means being between the position and the center of the effective area in the lateral direction or radial direction
  • being outside the position means being farther from the center of the effective area than the position in the lateral direction or radial direction.
  • the BAW resonator according to the present invention can be used to form a filter or other semiconductor devices.
  • a bulk acoustic wave resonator comprising:
  • a piezoelectric layer is disposed between the bottom electrode and the top electrode
  • a protruding structure is provided at the edge of the effective area of the resonator, and the angle of the inner end of the protruding structure is in the range of 25°-60°.
  • the angle of the inner end of the protruding structure is in the range of 35°-50°.
  • the protruding structure is arranged between the top electrode and the piezoelectric layer;
  • the protruding structure is arranged between the piezoelectric layer and the bottom electrode;
  • the protruding structure is arranged on the top electrode;
  • the protruding structure is arranged below the bottom electrode;
  • the protrusion structure is arranged in the piezoelectric layer.
  • the inner end of the protruding structure is located inside the edge of the acoustic mirror.
  • the bottom electrode is a gap electrode, and the acoustic mirror is arranged in the gap electrode; and/or
  • the top electrode is provided with an electrode thickening layer at a portion outside the inner end of the protruding structure.
  • the difference between the highest value and the lowest value of the impedance of the frequency-impedance curve of the resonator in the region of 30 MHz starting from the end of the parasitic region or in the interval of 60-80 MHz below the series resonant frequency is within the range of 2 times the lowest value, or
  • the bulge frequency point in the frequency-impedance curve of the resonator is outside the 30 MHz region starting from the end of the parasitic region.
  • the additional structure is arranged along the edge of the effective area.
  • the additional structure comprises an edge layer structure, the edge layer structure is arranged below the protruding structure, and the inner end of the edge layer structure is located outside the inner end of the protruding structure; and/or
  • the additional structure includes a concave structure, and the concave structure is located inside the convex structure.
  • the edge layer structure is arranged between the protrusion structure and the piezoelectric layer;
  • the edge structure layer is arranged in the piezoelectric layer.
  • a method for improving the performance of a bulk acoustic wave resonator comprising the steps of:
  • a protruding structure is provided at the edge of the effective area of the resonator, and the angle of the inner end of the protruding structure is selected so that the difference between the highest value and the lowest value of the impedance in the frequency-impedance curve of the resonator within the region of 30 MHz starting from the end of the parasitic region or within the interval of 60-80 MHz below the series resonance frequency is within the range of 2 times the lowest value, or the bulge frequency point in the frequency-impedance curve of the resonator is outside the region of 30 MHz starting from the end of the parasitic region.
  • the angle of the inner end of the protruding structure is selected within the range of 20°-60° so that the difference between the highest and lowest impedance values of the frequency-impedance curve of the resonator in the region of 30 MHz starting from the end of the parasitic region or in the interval of 60-80 MHz below the series resonance frequency is within the range of 2 times the lowest value.
  • the angle of the inner end of the protruding structure is selected to be in the range of 35°-50° so that the difference between the highest and lowest impedance values of the frequency-impedance curve of the resonator is within the range of 30 MHz starting from the end of the parasitic region or within the range of 60-80 MHz below the series resonance frequency, and is within the range of 2 times the lowest value, or the bulge frequency point in the frequency-impedance curve of the resonator is outside the region of 30 MHz starting from the end of the parasitic region.
  • the protruding structure is arranged between the top electrode and the piezoelectric layer;
  • the protruding structure is arranged between the piezoelectric layer and the bottom electrode;
  • the protruding structure is arranged on the top electrode;
  • the protruding structure is arranged below the bottom electrode;
  • the protrusion structure is arranged in the piezoelectric layer.
  • the inner end of the protruding structure is located inside the edge of the acoustic mirror of the resonator.
  • a filter comprising the BAW resonator according to any one of 1 to 9.
  • An electronic device comprising the filter according to 15, or the BAW resonator according to any one of 1 to 9.
  • the electronic equipment here includes but is not limited to intermediate products such as RF front-end, filter amplification modules, as well as terminal products such as mobile phones, WIFI, and drones.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

The present application relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer disposed between the bottom electrode and the top electrode. An edge of an effective area of the resonator is provided with a protruding structure, and an angle of an inner end of the protruding structure is within the range of 25°-60°. The present application also relates to a method for improving performance of a bulk acoustic wave resonator. The method comprises the steps: providing a protruding structure at an edge of an effective area of the resonator, and selecting an angle of an inner end of the protruding structure, so as to smooth the frequency-impedance curve of the resonator in an area starting at 30 MHz at the end of a parasitic area, or the part of the 60-80 MHz interval below a series resonance frequency. The present application also relates to a filter and an electronic device.

Description

选择凸起结构的角度以提升性能的体声波谐振器Selecting the angle of the raised structure to improve the performance of bulk acoustic wave resonators 技术领域Technical Field
本发明的实施例涉及半导体领域，尤其涉及一种体声波谐振器及其制造方法，一种具有该谐振器的滤波器，以及一种电子设备。The embodiments of the present invention relate to the semiconductor field, and in particular to a bulk acoustic wave resonator and a manufacturing method thereof, a filter having the resonator, and an electronic device.
背景技术Background technique
随着5G通信技术的日益发展，对通信频段的要求越来越高。传统的射频滤波器受结构和性能的限制，不能满足高频通信的要求。薄膜体声波谐振器(FBAR)作为一种新型的MEMS器件，具有体积小、质量轻、插入损耗低、频带宽以及品质因子高等优点，很好地适应了无线通信系统的更新换代，使FBAR技术成为通信领域的研究热点之一。With the increasing development of 5G communication technology, the requirements for communication frequency bands are getting higher and higher. Traditional RF filters are limited by structure and performance and cannot meet the requirements of high-frequency communication. As a new type of MEMS device, film bulk acoustic resonator (FBAR) has the advantages of small size, light weight, low insertion loss, wide frequency band and high quality factor. It is well adapted to the upgrading of wireless communication systems, making FBAR technology one of the research hotspots in the field of communications.
为了提升谐振器的并联谐振阻抗Rp，进而提升Q值，通常是在谐振区或者有效区域的边缘设置凸起结构，使主谐振器区与边界的声学不匹配，能量泄露得以降低，FBAR的性能得以提升。然而凸起结构的引入使得谐振器的频率-阻抗曲线中，在寄生区域(spurious)以下的阻抗曲线有一个鼓包，这会降低谐振器的性能，从而影响滤波器通带性能。In order to improve the parallel resonant impedance Rp of the resonator and thus improve the Q value, a protruding structure is usually set at the edge of the resonance area or the effective area to make the acoustic mismatch between the main resonator area and the boundary, reduce energy leakage, and improve the performance of the FBAR. However, the introduction of the protruding structure causes a bulge in the impedance curve below the parasitic region (spurious) in the frequency-impedance curve of the resonator, which will reduce the performance of the resonator and thus affect the passband performance of the filter.
发明内容Summary of the invention
为缓解或解决现有技术中的上述问题的至少一个方面，提出本发明。The present invention is proposed to alleviate or solve at least one aspect of the above-mentioned problems in the prior art.
根据本发明的实施例的一个方面，提出了一种体声波谐振器，包括：According to one aspect of an embodiment of the present invention, a bulk acoustic wave resonator is provided, comprising:
基底；substrate;
声学镜；Acoustic mirror;
底电极；bottom electrode;
顶电极；和a top electrode; and
压电层，设置在底电极与顶电极之间，A piezoelectric layer is disposed between the bottom electrode and the top electrode,
其中：in:
所述谐振器的有效区域的边缘设置有凸起结构，所述凸起结构的内端的角度在25°-60°的范围内。A protruding structure is provided at the edge of the effective area of the resonator, and the angle of the inner end of the protruding structure is in the range of 25°-60°.
本发明的实施例也涉及一种提高体声波谐振器性能的方法，包括步骤：在所述谐振器的有效区域的边缘设置凸起结构，选择所述凸起结构的内端的角度以使得：所述谐振器的频率-阻抗曲线在寄生区域结束处开始30MHz的区域内或者串联谐振频率以下60-80MHz的区间内的阻抗的最高值与最低值的差值在最低值的2倍的范围内，或者所述谐振器的频率-阻抗曲线中鼓包频率点在寄生区域结束处开始30MHz的区域之外。An embodiment of the present invention also relates to a method for improving the performance of a bulk acoustic wave resonator, comprising the steps of: setting a protruding structure on the edge of the effective area of the resonator, and selecting the angle of the inner end of the protruding structure so that: the frequency-impedance curve of the resonator is within a region of 30 MHz starting from the end of the parasitic region or within a range of 60-80 MHz below the series resonance frequency, and the difference between the highest value and the lowest value of the impedance is within a range of 2 times the lowest value, or the bulge frequency point in the frequency-impedance curve of the resonator is outside the region of 30 MHz starting from the end of the parasitic region.
本发明的实施例还涉及一种滤波器，包括上述的体声波谐振器。An embodiment of the present invention further relates to a filter, comprising the above-mentioned BAW resonator.
本发明的实施例也涉及一种电子设备，包括上述的滤波器或者上述的谐振器。An embodiment of the present invention also relates to an electronic device, comprising the above-mentioned filter or the above-mentioned resonator.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：The following description and accompanying drawings may better help understand these and other features and advantages of various embodiments disclosed by the present invention, wherein the same reference numerals in the drawings always represent the same components, wherein:
图1A为已知的体声波谐振器的截面示意图，其中并未设置凸起结构；FIG1A is a schematic cross-sectional view of a conventional BAW resonator, wherein no protruding structure is provided;
图1B为已知的体声波谐振器的截面示意图，其中设置了凸起结构；FIG1B is a schematic cross-sectional view of a known bulk acoustic wave resonator, in which a protruding structure is provided;
图2A为图1A中的体声波谐振器的频率-谐振曲线；FIG. 2A is a frequency-resonance curve of the BAW resonator in FIG. 1A ;
图2B为图1B中的体声波谐振器的频率-谐振曲线；FIG. 2B is a frequency-resonance curve of the BAW resonator in FIG. 1B ;
图3为根据本发明的一个示例性实施例的体声波谐振器的截面示意图，其中专门明确了凸起结构的内端的角度；3 is a schematic cross-sectional view of a BAW resonator according to an exemplary embodiment of the present invention, wherein the angle of the inner end of the protruding structure is specifically specified;
图4A为图3中的体声波谐振器的频率-谐振曲线，其中凸起结构的内端的角度为50度；FIG4A is a frequency-resonance curve of the BAW resonator in FIG3 , wherein the angle of the inner end of the protruding structure is 50 degrees;
图4B为图3中体声波谐振器的频率-谐振曲线，其中凸起结构的内端的角度为40度；FIG4B is a frequency-resonance curve of the BAW resonator in FIG3 , wherein the angle of the inner end of the protruding structure is 40 degrees;
图5为根据本发明的一个示例性的仿真图，示出了凸起结构的内端的角度与串联谐振频率以下60-80MHz的区间性能以及并联谐振阻抗之间的关系；FIG5 is an exemplary simulation diagram according to the present invention, showing the relationship between the angle of the inner end of the protruding structure and the performance in the range of 60-80 MHz below the series resonant frequency and the parallel resonant impedance;
图6-图10为根据本发明的不同示例性实施例的体声波谐振器的截面示意图。6 to 10 are schematic cross-sectional views of BAW resonators according to different exemplary embodiments of the present invention.
具体实施方式Detailed ways
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。 在说明书中，相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。发明的一部分实施例，而并不是全部的实施例。基于本发明中的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本发明保护的范围。The technical solution of the present invention is further specifically described below through embodiments and in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals indicate the same or similar parts. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the overall inventive concept of the present invention and should not be construed as a limitation of the present invention. Some embodiments of the invention are not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present invention.
在本发明中，通过设置凸起结构以及选择凸起结构的内端的角度，以在提升并联谐振阻抗Rp的同时还能够把寄生区域以下的频率-阻抗曲线的鼓包向低频处移动，以提升谐振器的性能从而提升滤波器通带性能。In the present invention, by setting a protruding structure and selecting the angle of the inner end of the protruding structure, the parallel resonant impedance Rp can be improved while the bulge of the frequency-impedance curve below the parasitic region can be moved to the low frequency, so as to improve the performance of the resonator and thus improve the passband performance of the filter.
首先，本发明的附图中的附图标记说明如下：First, the reference numerals in the accompanying drawings of the present invention are described as follows:
10：基底，可选材料为单晶硅、氮化镓、砷化镓、蓝宝石、石英、碳化硅、金刚石等。10: Substrate. Optional materials include single crystal silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond, etc.
20：声学镜，可为空腔，也可采用布拉格反射层及其他等效形式。本发明所示的实施例中采用的是设置于基底的内部以及间隙电极的形式，在可选的实施例中，空腔也可以位于基底的上表面。20: Acoustic mirror, which can be a cavity, or a Bragg reflection layer or other equivalent forms. In the embodiment shown in the present invention, the cavity is arranged inside the substrate and in the form of a gap electrode. In an optional embodiment, the cavity can also be located on the upper surface of the substrate.
30、31：底电极，材料可选：钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。30, 31: bottom electrode, optional materials: molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or composites of the above metals or alloys thereof.
40：压电层，可以为单晶压电材料，可选的，如：单晶氮化铝、单晶氮化镓、单晶铌酸锂、单晶锆钛酸铅(PZT)、单晶铌酸钾、单晶石英薄膜、或者单晶钽酸锂等材料，也可以为多晶压电材料(与单晶相对应，非单晶材料)，可选的，如多晶氮化铝、氧化锌、PZT等，还可是包含上述材料的一定原子比的稀土元素掺杂材料，例如可以是掺杂氮化铝，掺杂氮化铝至少含一种稀土元素，如钪(Sc)、钇(Y)、镁(Mg)、钛(Ti)、镧(La)、铈(Ce)、镨(Pr)、钕(Nd)、钷(Pm)、钐(Sm)、铕(Eu)、钆(Gd)、铽(Tb)、镝(Dy)、钬(Ho)、铒(Er)、铥(Tm)、镱(Yb)、镥(Lu)等。40: The piezoelectric layer may be a single crystal piezoelectric material, such as single crystal aluminum nitride, single crystal gallium nitride, single crystal lithium niobate, single crystal lead zirconate titanate (PZT), single crystal potassium niobate, single crystal quartz film, or single crystal lithium tantalate, etc. It may also be a polycrystalline piezoelectric material (corresponding to a single crystal, a non-single crystal material), such as polycrystalline aluminum nitride, zinc oxide, PZT, etc. It may also be a rare earth element doped with a certain atomic ratio of the above materials. The material, for example, can be doped aluminum nitride, which contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.
50：顶电极，材料可选钼、钌、金、铝、镁、钨、铜、钛、铱、锇、铬或以上金属的复合或其合金等。顶电极和底电极材料一般相同，但也可以不同。50: Top electrode, the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys. The top electrode and the bottom electrode are generally made of the same material, but can also be different.
51：凸起结构，材料可选钼、钌、金、铝、镁、钨、铜、钛、铱、锇、铬或以上金属的符合或其合金等，也可以选AlN、SiN、SiO2等非金属材料。51: The protruding structure may be made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a combination of the above metals or their alloys, or non-metallic materials such as AlN, SiN, SiO2 , etc.
52：边缘层结构，材料包括空气或者用于反射声波的功能材料，其中，所述功能材料的声阻抗小于或者等于空气的声阻抗。 52: Edge layer structure, the material includes air or a functional material for reflecting sound waves, wherein the acoustic impedance of the functional material is less than or equal to the acoustic impedance of air.
54：顶电极加厚层，材料可选钼、钌、金、铝、镁、钨、铜、钛、铱、锇、铬或以上金属的复合或其合金等。54: Top electrode thickening layer, the material of which can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys.
60：钝化层或工艺层，设置在谐振器的顶电极上，可以是质量调节负载或钝化层，其材料可以为介质材料，如AlN、SiN、Al2O3、SiO2等材料。60: A passivation layer or a process layer, which is disposed on the top electrode of the resonator and may be a mass adjustment load or a passivation layer, and the material thereof may be a dielectric material, such as AlN, SiN, Al 2 O 3 , SiO 2 and the like.
61：钝化层或工艺层，设置在顶电极加厚层60上，其材料可以为介质材料，如AlN、SiN、Al2O3、SiO2等材料。61: a passivation layer or a process layer, which is disposed on the top electrode thickening layer 60 and whose material may be a dielectric material, such as AlN, SiN, Al 2 O 3 , SiO 2 and the like.
图1A为已知的体声波谐振器的截面示意图，其中并未设置凸起结构，图2A为图1A中的体声波谐振器的频率-谐振曲线，并联谐振阻抗Rp为频率-谐振曲线的最高点，假定值为1。1A is a cross-sectional schematic diagram of a known BAW resonator, in which no protruding structure is provided. FIG. 2A is a frequency-resonance curve of the BAW resonator in FIG. 1A , and the parallel resonant impedance Rp is the highest point of the frequency-resonance curve, and its value is assumed to be 1.
图1B为已知的体声波谐振器的截面示意图，其中设置了凸起结构，图2B为图1B中的体声波谐振器的频率-谐振曲线。相对于图1A的结构，在图2B中，并联谐振阻抗Rp最多可以提升至1.5，即带凸起结构的谐振器比不带凸起结构谐振器的并联阻抗最多能够提升50％。但是，如图2B所示，频率-谐振曲线中寄生区域以下有两个鼓包，其中离寄生区域较近的鼓包(对应位置B)会对(滤波器通带)性能有影响。如图2B所示，方框右侧为寄生区域结束位置(即C点)，左侧为从寄生区域向左30MHz的位置。从图2B可以看出串联谐振频率Fs近处第一鼓包B点的位置在方框以内。FIG. 1B is a cross-sectional schematic diagram of a known bulk acoustic wave resonator, in which a protruding structure is provided, and FIG. 2B is a frequency-resonance curve of the bulk acoustic wave resonator in FIG. 1B . Relative to the structure of FIG. 1A , in FIG. 2B , the parallel resonant impedance Rp can be increased to 1.5 at most, that is, the parallel impedance of the resonator with a protruding structure can be increased by 50% at most compared to the resonator without a protruding structure. However, as shown in FIG. 2B , there are two bulges below the parasitic region in the frequency-resonance curve, and the bulge closer to the parasitic region (corresponding to position B) will have an impact on the (filter passband) performance. As shown in FIG. 2B , the right side of the box is the end position of the parasitic region (i.e., point C), and the left side is the position 30MHz to the left from the parasitic region. It can be seen from FIG. 2B that the position of the first bulge point B near the series resonance frequency Fs is within the box.
图3为根据本发明的一个示例性实施例的体声波谐振器的截面示意图，其中专门明确了凸起结构的内端的角度。通过调节或选择凸起结构51的内端的角度(如参见图3中凸起结构51的角度θ)，可以适当改变离寄生区域较近的鼓包的位置，使其向远离串联谐振频率Fs的方向移动。Fig. 3 is a schematic cross-sectional view of a BAW resonator according to an exemplary embodiment of the present invention, in which the angle of the inner end of the protruding structure is specifically specified. By adjusting or selecting the angle of the inner end of the protruding structure 51 (such as referring to the angle θ of the protruding structure 51 in Fig. 3), the position of the bulge closer to the parasitic region can be appropriately changed to move it away from the series resonant frequency Fs.
如图2B所示，其中A位置为离串联谐振频率Fs最远处鼓包(第二鼓包)，B位置为串联谐振频率Fs近处鼓包(第一鼓包)或鼓包频率点，C位置为寄生区域结束位置，D位置为串联谐振频率Fs，E位置为并联谐振频率Fp。As shown in Figure 2B, position A is the bulge farthest from the series resonant frequency Fs (the second bulge), position B is the bulge near the series resonant frequency Fs (the first bulge) or the bulge frequency point, position C is the end position of the parasitic area, position D is the series resonant frequency Fs, and position E is the parallel resonant frequency Fp.
图4A为图3中的体声波谐振器的频率-谐振曲线，其中凸起结构51的角度θ为50°，图4A中，A'至E'的意义同A至E，可以看出：随着凸起结构51角度增加A、C、D、E位置保持不变，但B位置(第一鼓包)相对于图2B中向左移动(串联谐振频率Fs相反方向)到B'位置，对应的BC之间的曲线由原来的较为陡峭的曲线变成B'C'较为平滑的曲线。FIG4A is a frequency-resonance curve of the BAW resonator in FIG3 , wherein the angle θ of the protruding structure 51 is 50°. In FIG4A , A' to E' have the same meaning as A to E. It can be seen that: as the angle of the protruding structure 51 increases, the positions of A, C, D, and E remain unchanged, but the position B (the first bulge) moves to the left relative to FIG2B (in the opposite direction of the series resonance frequency Fs) to the position B', and the corresponding curve between BC changes from the original steeper curve to the smoother curve between B' and C'.
图4B为图3中的体声波谐振器的频率-谐振曲线，其中凸起结构51的角度θ为40°，图4B中，A'至E'的意义同A至E，可以看出：随着凸起结构51角度增加A、C、D、E位置保持不变，但B位置(第一鼓包)相对于图2B中向左移动(串联谐振频率Fs相反方向)到B'位置，对应的BC之间的曲线由原来的较为陡峭的曲线变成B'C'较为平滑的曲线。FIG4B is a frequency-resonance curve of the BAW resonator in FIG3 , wherein the angle θ of the protruding structure 51 is 40°. In FIG4B , A' to E' have the same meaning as A to E. It can be seen that: as the angle of the protruding structure 51 increases, the positions of A, C, D, and E remain unchanged, but the position B (the first bulge) moves to the left relative to FIG2B (in the opposite direction of the series resonance frequency Fs) to the position B', and the corresponding curve between BC changes from the original steeper curve to the smoother curve between B' and C'.
在本发明中，在频率-阻抗曲线中寄生区域结束处(C’点)开始30MHz区域即方框中标注的区间定义为Qsw1，或者将串联谐振频率Fs以下60-80MHz的区间性能定义为Qsw1，如图4A和图4B的方框标注的位置，此处曲线越陡峭或者整体越高则Qsw1就越低，对应谐振器性能较差；曲线越平滑或者整体越低则Qsw1就越高，对应谐振器性能较好。此外，并联谐振频率Rp越高，谐振器性能越好。In the present invention, the 30MHz region starting from the end of the parasitic region (point C') in the frequency-impedance curve, that is, the interval marked in the box is defined as Qsw1, or the performance of the interval of 60-80MHz below the series resonant frequency Fs is defined as Qsw1, as shown in the positions marked in the boxes of Figures 4A and 4B. The steeper the curve or the higher the overall curve, the lower the Qsw1, and the corresponding resonator performance is poor; the smoother the curve or the lower the overall curve, the higher the Qsw1, and the corresponding resonator performance is better. In addition, the higher the parallel resonant frequency Rp, the better the resonator performance.
从图2B可以看出串联谐振频率Fs近处第一鼓包B点的位置在方框以内，而随着角度增加到40°时(参见图4B)，B’点的位置被推到方框的边缘，在另外的实施例中，当角度增加到例如50°时，B’点的位置被推到方框以外(参见图4A)，即方框在B’点(鼓包频率点)到C’点之间且B’点在方框的之外，即谐振器的频率-阻抗曲线中，鼓包频率在寄生区域结束处开始30MHz的区域之外。It can be seen from Figure 2B that the position of the first bulge point B near the series resonance frequency Fs is within the box, and as the angle increases to 40° (see Figure 4B), the position of point B’ is pushed to the edge of the box. In another embodiment, when the angle increases to, for example, 50°, the position of point B’ is pushed outside the box (see Figure 4A), that is, the box is between point B’ (bulge frequency point) and point C’ and point B’ is outside the box, that is, in the frequency-impedance curve of the resonator, the bulge frequency is outside the 30MHz area starting at the end of the parasitic region.
在本发明中，通过设置凸起结构51以及选择凸起结构51的内端的角度，例如在25°-60°的范围内，使得谐振器的频率-阻抗曲线在寄生区域结束处开始30MHz的区域内或者串联谐振频率Fs以下60-80MHz的区间内的阻抗的最高值与最低值的差值在最低值的2倍的范围内。可以认为最高点与最低点之间的连线越接近水平线则认为越平缓，越平缓谐振器的性能越好。明显的，在图2B、图4B与图4A中，在方框内曲线的陡峭程度依次变缓。也可以认为，在本发明的方案中，B’点在方框的之外，在方框与频率-阻抗曲线的两个交点的连线与方框的右侧边形成的角度在90°-50°的范围内表示最高点与最低点之间的连线平缓，其中90°对应于两个交点的连线为水平线。In the present invention, by setting the protruding structure 51 and selecting the angle of the inner end of the protruding structure 51, for example, in the range of 25°-60°, the frequency-impedance curve of the resonator is made to have a difference between the highest value and the lowest value of the impedance in the region of 30MHz starting from the end of the parasitic region or in the interval of 60-80MHz below the series resonant frequency Fs within the range of 2 times the lowest value. It can be considered that the closer the line between the highest point and the lowest point is to the horizontal line, the flatter it is, and the flatter the performance of the resonator is, the better. Obviously, in Figures 2B, 4B and 4A, the steepness of the curve in the box becomes slower in turn. It can also be considered that in the scheme of the present invention, point B' is outside the box, and the angle formed by the line connecting the two intersections of the box and the frequency-impedance curve and the right side of the box is in the range of 90°-50°, indicating that the line between the highest point and the lowest point is flat, where 90° corresponds to the line connecting the two intersections being a horizontal line.
图5为根据本发明的一个示例性的仿真图，示出了凸起结构的内端的角度与串联谐振频率以下60-80MHz的区间性能以及并联谐振阻抗之间的关系。从图5的性能与角度关系曲线可以看出凸起结构51的角度θ通常范围是20°-80°，在本发明中，使用25°-60°这一范围，这有利于获得在寄生区域结束处开始30MHz的区域内或者串联谐振频率以下60-80MHz的区间内较高的性能，从而提高谐振器的性能。FIG5 is an exemplary simulation diagram according to the present invention, showing the relationship between the angle of the inner end of the protruding structure and the performance in the range of 60-80 MHz below the series resonant frequency and the parallel resonant impedance. From the performance and angle relationship curve of FIG5 , it can be seen that the angle θ of the protruding structure 51 is usually in the range of 20°-80°. In the present invention, the range of 25°-60° is used, which is conducive to obtaining higher performance in the region of 30 MHz starting from the end of the parasitic region or in the range of 60-80 MHz below the series resonant frequency, thereby improving the performance of the resonator.
进一步的实施例中，凸起结构51的角度θ可以使用35°-50°这一范围，在35°-50°的范围，并联谐振频率Rp，以及在寄生区域结束处开始30MHz的区域内例如串联谐振频率以下60-80MHz的区间性能都得到保证，从而综合性能较佳，即此时：既能够保证较高的并联谐振频率Rp，也能够保证Qsw1没有明显降低，对应的第一鼓包即图4A中B'的位置距离串联谐振频率Fs较远，使得寄生区域结束处的曲线(方框标注的位置)总体较低，以有利于保证滤波器通带性能。In a further embodiment, the angle θ of the protruding structure 51 can be in the range of 35°-50°. In the range of 35°-50°, the parallel resonant frequency Rp and the performance in the region of 30 MHz starting from the end of the parasitic region, for example, the range of 60-80 MHz below the series resonant frequency are guaranteed, so that the overall performance is better. That is, at this time: it can ensure a higher parallel resonant frequency Rp and also ensure that Qsw1 is not significantly reduced. The corresponding first bulge, that is, the position of B' in Figure 4A, is far away from the series resonant frequency Fs, so that the curve at the end of the parasitic region (the position marked by the box) is generally lower, which is beneficial to ensure the passband performance of the filter.
凸起结构51也可以与附加结构相配合，以提升谐振器的性能。图6-图10为根据本发明的不同示例性实施例的体声波谐振器的截面示意图。The protruding structure 51 may also cooperate with an additional structure to improve the performance of the resonator. Figures 6 to 10 are cross-sectional schematic diagrams of BAW resonators according to different exemplary embodiments of the present invention.
如图6所示，附加结构包括边缘层结构52，边缘层结构52设置在凸起结构51的下方，边缘层结构52的内端处于凸起结构51的内端的外侧。如图6所示，边缘层结构52设置在凸起结构51与压电层40之间。在另外的实施例中，虽然没有示出，边缘层结构52也可以设置在压电层中。As shown in Fig. 6, the additional structure includes an edge layer structure 52, which is disposed below the protruding structure 51, and the inner end of the edge layer structure 52 is located outside the inner end of the protruding structure 51. As shown in Fig. 6, the edge layer structure 52 is disposed between the protruding structure 51 and the piezoelectric layer 40. In other embodiments, although not shown, the edge layer structure 52 may also be disposed in the piezoelectric layer.
如能够理解的，凸起结构51在谐振器的厚度方向上可以设置在顶电极50与压电层40之间，也可以设置在压电层40与底电极30之间，还可以设置在顶电极的上方或者底电极的下方。在可选的实施例中，凸起结构51也可以设置在压电层40中。As can be understood, the protruding structure 51 can be disposed between the top electrode 50 and the piezoelectric layer 40, between the piezoelectric layer 40 and the bottom electrode 30, or above the top electrode or below the bottom electrode in the thickness direction of the resonator. In an optional embodiment, the protruding structure 51 can also be disposed in the piezoelectric layer 40.
在本发明中，凸起结构51与边缘层结构52可以在谐振器的厚度方向上相邻设置，也可以分开设置，均在本发明的保护范围之内。In the present invention, the protrusion structure 51 and the edge layer structure 52 can be arranged adjacent to each other in the thickness direction of the resonator, or can be arranged separately, both of which are within the protection scope of the present invention.
如图7所示，在一个示例性实施例中，附加结构可以包括凹陷结构53这样的声阻抗不匹配结构，凹陷结构53处于所述凸起结构的内侧。As shown in FIG. 7 , in an exemplary embodiment, the additional structure may include an acoustic impedance mismatching structure such as a concave structure 53 , and the concave structure 53 is located inside the convex structure.
如图8所示，在一个示例性实施例中，底电极为间隙电极，所述间隙电极包括底电极30与底电极31，底电极30与底电极31之间设置有作为声学镜20的间隙。这有利于降低串联谐振阻抗Rs以及寄生阻抗，也增加了底电极的厚度，从而提高了进一步谐振器的性能。As shown in Fig. 8, in an exemplary embodiment, the bottom electrode is a gap electrode, and the gap electrode includes a bottom electrode 30 and a bottom electrode 31, and a gap serving as an acoustic mirror 20 is provided between the bottom electrode 30 and the bottom electrode 31. This is beneficial to reducing the series resonance impedance Rs and the parasitic impedance, and also increases the thickness of the bottom electrode, thereby further improving the performance of the resonator.
如图9所示，在一个示例性实施例中，顶电极50在处于凸起结构的内端外侧的部分设置有电极加厚层54，这有利于降低串联谐振阻抗Rs以及寄生阻抗，也增加了顶电极的厚度，从而进一步提高了谐振器的性能。 As shown in FIG. 9 , in an exemplary embodiment, the top electrode 50 is provided with an electrode thickening layer 54 at the portion outside the inner end of the protruding structure, which is beneficial to reducing the series resonant impedance Rs and the parasitic impedance, and also increases the thickness of the top electrode, thereby further improving the performance of the resonator.
附加结构也可以组合，如图10所示，在一个示例性实施例中，边缘层结构52与凹陷结构53组合，同样的，虽然没有示出，边缘层结构52的位置也可以设置在凸起结构51与压电层40之间或者设置在压电层中。Additional structures can also be combined. As shown in Figure 10, in an exemplary embodiment, the edge layer structure 52 is combined with the recessed structure 53. Similarly, although not shown, the edge layer structure 52 can also be positioned between the raised structure 51 and the piezoelectric layer 40 or in the piezoelectric layer.
基于以上，本发明也涉及一种提高体声波谐振器性能的方法，即，在谐振器的有效区域的边缘设置凸起结构，选择所述凸起结构的内端的角度以平缓谐振器的频率-阻抗曲线在串联谐振频率以下60-80MHz区间的部分。Based on the above, the present invention also relates to a method for improving the performance of a bulk acoustic wave resonator, that is, a protruding structure is provided at the edge of an effective area of the resonator, and the angle of the inner end of the protruding structure is selected to smooth the frequency-impedance curve of the resonator in the range of 60-80MHz below the series resonance frequency.
需要指出的是，在本发明中，各个数值范围，除了明确指出不包含端点值之外，除了可以为端点值，还可以为各个数值范围的中值，这些均在本发明的保护范围之内。It should be pointed out that in the present invention, each numerical range, except for explicitly stating that it does not include the endpoint value, can be the endpoint value or the median value of each numerical range, all of which are within the protection scope of the present invention.
在本发明中，上和下是相对于谐振器的基底的底面而言的，对于一个部件，其靠近该底面的一侧为下侧，远离该底面的一侧为上侧。In the present invention, the terms "up" and "down" are relative to the bottom surface of the base of the resonator. For a component, the side close to the bottom surface is the lower side, and the side away from the bottom surface is the upper side.
在本发明中，内和外是相对于谐振器的有效区域(压电层、顶电极、底电极和声学镜在谐振器的厚度方向上的重叠区域构成有效区域)的中心(即有效区域中心)在横向方向或者径向方向上而言的，一个部件的靠近有效区域中心的一侧或一端为内侧或内端，而该部件的远离有效区域中心的一侧或一端为外侧或外端。对于一个参照位置而言，位于该位置的内侧表示在横向方向或径向方向上处于该位置与有效区域中心之间，位于该位置的外侧表示在横向方向或径向方向上比该位置更远离有效区域中心。In the present invention, inside and outside refer to the center (i.e., the center of the effective area) of the resonator (the overlapping area of the piezoelectric layer, the top electrode, the bottom electrode, and the acoustic mirror in the thickness direction of the resonator constitutes the effective area) in the lateral direction or radial direction. The side or end of a component close to the center of the effective area is the inside or the inner end, and the side or end of the component far from the center of the effective area is the outside or the outer end. For a reference position, being inside the position means being between the position and the center of the effective area in the lateral direction or radial direction, and being outside the position means being farther from the center of the effective area than the position in the lateral direction or radial direction.
如本领域技术人员能够理解的，根据本发明的体声波谐振器可以用于形成滤波器或其他半导体器件。As can be understood by those skilled in the art, the BAW resonator according to the present invention can be used to form a filter or other semiconductor devices.
基于以上，本发明提出了如下技术方案：Based on the above, the present invention proposes the following technical solutions:
1、一种体声波谐振器，包括：1. A bulk acoustic wave resonator, comprising:
基底；substrate;
声学镜；Acoustic mirror;
底电极；bottom electrode;
顶电极；和a top electrode; and
压电层，设置在底电极与顶电极之间，A piezoelectric layer is disposed between the bottom electrode and the top electrode,
其中：in:
所述谐振器的有效区域的边缘设置有凸起结构，所述凸起结构的内端的角度在25°-60°的范围内。 A protruding structure is provided at the edge of the effective area of the resonator, and the angle of the inner end of the protruding structure is in the range of 25°-60°.
2、根据1所述的谐振器，其中：2. The resonator according to item 1, wherein:
所述凸起结构的内端的角度在35°-50°的范围内。The angle of the inner end of the protruding structure is in the range of 35°-50°.
3、根据1所述的谐振器，其中：3. The resonator according to item 1, wherein:
在谐振器的厚度方向上，所述凸起结构设置在顶电极与压电层之间；或In the thickness direction of the resonator, the protruding structure is arranged between the top electrode and the piezoelectric layer; or
在谐振器的厚度方向上，所述凸起结构设置在压电层与底电极之间；或In the thickness direction of the resonator, the protruding structure is arranged between the piezoelectric layer and the bottom electrode; or
在谐振器的厚度方向上，所述凸起结构设置在顶电极之上；或In the thickness direction of the resonator, the protruding structure is arranged on the top electrode; or
在谐振器的厚度方向上，所述凸起结构设置在底电极之下；或In the thickness direction of the resonator, the protruding structure is arranged below the bottom electrode; or
所述凸起结构设置在压电层中。The protrusion structure is arranged in the piezoelectric layer.
4、根据1所述的谐振器，其中：4. The resonator according to item 1, wherein:
所述凸起结构的内端处于声学镜的边缘的内侧。The inner end of the protruding structure is located inside the edge of the acoustic mirror.
5、根据1所述的谐振器，其中：5. The resonator according to item 1, wherein:
所述底电极为间隙电极，所述间隙电极内设置有所述声学镜；和/或The bottom electrode is a gap electrode, and the acoustic mirror is arranged in the gap electrode; and/or
所述顶电极在处于所述凸起结构的内端外侧的部分设置有电极加厚层。The top electrode is provided with an electrode thickening layer at a portion outside the inner end of the protruding structure.
6、根据1所述的谐振器，其中：6. The resonator according to item 1, wherein:
所述谐振器的频率-阻抗曲线在寄生区域结束处开始30MHz的区域内或者串联谐振频率以下60-80MHz的区间内的阻抗的最高值与最低值的差值在最低值的2倍的范围内，或者The difference between the highest value and the lowest value of the impedance of the frequency-impedance curve of the resonator in the region of 30 MHz starting from the end of the parasitic region or in the interval of 60-80 MHz below the series resonant frequency is within the range of 2 times the lowest value, or
所述谐振器的频率-阻抗曲线中鼓包频率点在寄生区域结束处开始30MHz的区域之外。The bulge frequency point in the frequency-impedance curve of the resonator is outside the 30 MHz region starting from the end of the parasitic region.
7、根据1-6中任一项所述的谐振器，还包括：7. The resonator according to any one of 1 to 6, further comprising:
附加结构，沿所述有效区域的边缘设置。The additional structure is arranged along the edge of the effective area.
8、根据7所述的谐振器，其中：8. The resonator according to item 7, wherein:
所述附加结构包括边缘层结构，所述边缘层结构设置在凸起结构的下方，所述边缘层结构的内端处于所述凸起结构的内端的外侧；和/或The additional structure comprises an edge layer structure, the edge layer structure is arranged below the protruding structure, and the inner end of the edge layer structure is located outside the inner end of the protruding structure; and/or
所述附加结构包括凹陷结构，所述凹陷结构处于所述凸起结构的内侧。The additional structure includes a concave structure, and the concave structure is located inside the convex structure.
9、根据8所述的谐振器，其中：9. The resonator according to 8, wherein:
在谐振器的厚度方向上，所述边缘层结构设置在凸起结构与压电层之间；或者In the thickness direction of the resonator, the edge layer structure is arranged between the protrusion structure and the piezoelectric layer; or
所述边缘结构层设置在压电层中。The edge structure layer is arranged in the piezoelectric layer.
10、一种提高体声波谐振器性能的方法，包括步骤： 10. A method for improving the performance of a bulk acoustic wave resonator, comprising the steps of:
在所述谐振器的有效区域的边缘设置凸起结构，选择所述凸起结构的内端的角度以使得所述谐振器的频率-阻抗曲线在寄生区域结束处开始30MHz的区域内或者串联谐振频率以下60-80MHz的区间内的阻抗的最高值与最低值的差值在最低值的2倍的范围内，或者所述谐振器的频率-阻抗曲线中鼓包频率点在寄生区域结束处开始30MHz的区域之外。A protruding structure is provided at the edge of the effective area of the resonator, and the angle of the inner end of the protruding structure is selected so that the difference between the highest value and the lowest value of the impedance in the frequency-impedance curve of the resonator within the region of 30 MHz starting from the end of the parasitic region or within the interval of 60-80 MHz below the series resonance frequency is within the range of 2 times the lowest value, or the bulge frequency point in the frequency-impedance curve of the resonator is outside the region of 30 MHz starting from the end of the parasitic region.
11、根据10所述的方法，其中：11. The method according to 10, wherein:
选择所述凸起结构的内端的角度在20°-60°的范围内以使得所述谐振器的频率-阻抗曲线在寄生区域结束处开始30MHz的区域内或者串联谐振频率以下60-80MHz的区间内的阻抗的最高值与最低值的差值在最低值的2倍的范围内。The angle of the inner end of the protruding structure is selected within the range of 20°-60° so that the difference between the highest and lowest impedance values of the frequency-impedance curve of the resonator in the region of 30 MHz starting from the end of the parasitic region or in the interval of 60-80 MHz below the series resonance frequency is within the range of 2 times the lowest value.
12、根据11所述的方法，其中：12. The method according to 11, wherein:
选择所述凸起结构的内端的角度在35°-50°的范围内以使得所述谐振器的频率-阻抗曲线在寄生区域结束处开始30MHz的区域内或者串联谐振频率以下60-80MHz的区间内的阻抗的最高值与最低值的差值在最低值的2倍的范围内，或者所述谐振器的频率-阻抗曲线中鼓包频率点在寄生区域结束处开始30MHz的区域之外。The angle of the inner end of the protruding structure is selected to be in the range of 35°-50° so that the difference between the highest and lowest impedance values of the frequency-impedance curve of the resonator is within the range of 30 MHz starting from the end of the parasitic region or within the range of 60-80 MHz below the series resonance frequency, and is within the range of 2 times the lowest value, or the bulge frequency point in the frequency-impedance curve of the resonator is outside the region of 30 MHz starting from the end of the parasitic region.
13、根据10所述的方法，其中：13. The method according to 10, wherein:
在谐振器的厚度方向上，所述凸起结构设置在顶电极与压电层之间；或In the thickness direction of the resonator, the protruding structure is arranged between the top electrode and the piezoelectric layer; or
在谐振器的厚度方向上，所述凸起结构设置在压电层与底电极之间；或In the thickness direction of the resonator, the protruding structure is arranged between the piezoelectric layer and the bottom electrode; or
在谐振器的厚度方向上，所述凸起结构设置在顶电极之上；或In the thickness direction of the resonator, the protruding structure is arranged on the top electrode; or
在谐振器的厚度方向上，所述凸起结构设置在底电极之下；或In the thickness direction of the resonator, the protruding structure is arranged below the bottom electrode; or
所述凸起结构设置在压电层中。The protrusion structure is arranged in the piezoelectric layer.
14、根据10所述的方法，其中：14. The method according to 10, wherein:
设置有凸起结构的步骤中，使得所述凸起结构的内端处于谐振器的声学镜的边缘的内侧。In the step of providing a protruding structure, the inner end of the protruding structure is located inside the edge of the acoustic mirror of the resonator.
15、一种滤波器，包括根据1-9中任一项所述的体声波谐振器。15. A filter comprising the BAW resonator according to any one of 1 to 9.
16、一种电子设备，包括根据15所述的滤波器，或者根据1-9中任一项所述的体声波谐振器。16. An electronic device comprising the filter according to 15, or the BAW resonator according to any one of 1 to 9.
这里的电子设备，包括但不限于射频前端、滤波放大模块等中间产品，以及手机、WIFI、无人机等终端产品。The electronic equipment here includes but is not limited to intermediate products such as RF front-end, filter amplification modules, as well as terminal products such as mobile phones, WIFI, and drones.
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言， 可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。 Although embodiments of the present invention have been shown and described, it will be apparent to those skilled in the art that It will be understood that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (16)

  1. 一种体声波谐振器，包括：A bulk acoustic wave resonator, comprising:
    基底；substrate;
    声学镜；Acoustic mirror;
    底电极；bottom electrode;
    顶电极；和a top electrode; and
    压电层，设置在底电极与顶电极之间，A piezoelectric layer is disposed between the bottom electrode and the top electrode,
    其中：in:
    所述谐振器的有效区域的边缘设置有凸起结构，所述凸起结构的内端的角度在25°-60°的范围内。A protruding structure is provided at the edge of the effective area of the resonator, and the angle of the inner end of the protruding structure is in the range of 25°-60°.
  2. 根据权利要求1所述的谐振器，其中：The resonator according to claim 1, wherein:
    所述凸起结构的内端的角度在35°-50°的范围内。The angle of the inner end of the protruding structure is in the range of 35°-50°.
  3. 根据权利要求1所述的谐振器，其中：The resonator according to claim 1, wherein:
    在谐振器的厚度方向上，所述凸起结构设置在顶电极与压电层之间；或In the thickness direction of the resonator, the protruding structure is arranged between the top electrode and the piezoelectric layer; or
    在谐振器的厚度方向上，所述凸起结构设置在压电层与底电极之间；或In the thickness direction of the resonator, the protruding structure is arranged between the piezoelectric layer and the bottom electrode; or
    在谐振器的厚度方向上，所述凸起结构设置在顶电极之上；或In the thickness direction of the resonator, the protruding structure is arranged on the top electrode; or
    在谐振器的厚度方向上，所述凸起结构设置在底电极之下；或In the thickness direction of the resonator, the protruding structure is arranged below the bottom electrode; or
    所述凸起结构设置在压电层中。The protrusion structure is arranged in the piezoelectric layer.
  4. 根据权利要求1所述的谐振器，其中：The resonator according to claim 1, wherein:
    所述凸起结构的内端处于声学镜的边缘的内侧。The inner end of the protruding structure is located inside the edge of the acoustic mirror.
  5. 根据权利要求1所述的谐振器，其中：The resonator according to claim 1, wherein:
    所述底电极为间隙电极，所述间隙电极内设置有所述声学镜；和/或The bottom electrode is a gap electrode, and the acoustic mirror is arranged in the gap electrode; and/or
    所述顶电极在处于所述凸起结构的内端外侧的部分设置有电极加厚层。The top electrode is provided with an electrode thickening layer at a portion outside the inner end of the protruding structure.
  6. 根据权利要求1所述的谐振器，其中：The resonator according to claim 1, wherein:
    所述谐振器的频率-阻抗曲线在寄生区域结束处开始30MHz的区域内或者串联谐振频率以下60-80MHz的区间内的阻抗的最高值与最低值的差值在最低值的2倍的范围内；或者The difference between the highest value and the lowest value of the impedance of the frequency-impedance curve of the resonator in the region of 30 MHz starting from the end of the parasitic region or in the interval of 60-80 MHz below the series resonance frequency is within the range of 2 times the lowest value; or
    所述谐振器的频率-阻抗曲线中，鼓包频率点在寄生区域结束处开始30MHz的区域之外。In the frequency-impedance curve of the resonator, the bulge frequency point is outside the 30 MHz region starting from the end of the parasitic region.
  7. 根据权利要求1-6中任一项所述的谐振器，还包括：The resonator according to any one of claims 1 to 6, further comprising:
    附加结构，沿所述有效区域的边缘设置。The additional structure is arranged along the edge of the effective area.
  8. 根据权利要求7所述的谐振器，其中：The resonator according to claim 7, wherein:
    所述附加结构包括边缘层结构，所述边缘层结构设置在凸起结构的下方，所述边缘层结构的内端处于所述凸起结构的内端的外侧；和/或The additional structure comprises an edge layer structure, the edge layer structure is arranged below the protruding structure, and the inner end of the edge layer structure is located outside the inner end of the protruding structure; and/or
    所述附加结构包括凹陷结构，所述凹陷结构处于所述凸起结构的内侧。The additional structure includes a concave structure, and the concave structure is located inside the convex structure.
  9. 根据权利要求8所述的谐振器，其中：The resonator of claim 8, wherein:
    在谐振器的厚度方向上，所述边缘层结构设置在凸起结构与压电层之间；或者In the thickness direction of the resonator, the edge layer structure is arranged between the protrusion structure and the piezoelectric layer; or
    所述边缘结构层设置在压电层中。The edge structure layer is arranged in the piezoelectric layer.
  10. 一种提高体声波谐振器性能的方法，包括步骤：A method for improving the performance of a bulk acoustic wave resonator comprises the steps of:
    在所述谐振器的有效区域的边缘设置凸起结构，选择所述凸起结构的内端的角度以使得：所述谐振器的频率-阻抗曲线在寄生区域结束处开始30MHz的区域内或者串联谐振频率以下60-80MHz的区间内的阻抗的最高值与最低值的差值在最低值的2倍的范围内，或者所述谐振器的频率-阻抗曲线中鼓包频率点在寄生区域结束处开始30MHz的区域之外。A protruding structure is provided at the edge of the effective area of the resonator, and the angle of the inner end of the protruding structure is selected so that: the difference between the highest value and the lowest value of the impedance in the frequency-impedance curve of the resonator within the region of 30 MHz starting from the end of the parasitic region or within the interval of 60-80 MHz below the series resonance frequency is within the range of 2 times the lowest value, or the bulge frequency point in the frequency-impedance curve of the resonator is outside the region of 30 MHz starting from the end of the parasitic region.
  11. 根据权利要求10所述的方法，其中：The method according to claim 10, wherein:
    选择所述凸起结构的内端的角度在20°-60°的范围内以使得：所述谐振器的频率-阻抗曲线在寄生区域结束处开始30MHz的区域内或者串联谐振频率以下60-80MHz的区间内的阻抗的最高值与最低值的差值在最低值的2倍的范围内，或者所述谐振器的频率-阻抗曲线中鼓包频率点在寄生区域结束处开始30MHz的区域之外。The angle of the inner end of the protruding structure is selected within the range of 20°-60° so that: the difference between the highest and lowest values of the impedance in the frequency-impedance curve of the resonator is within the range of 30 MHz starting from the end of the parasitic region or in the interval of 60-80 MHz below the series resonance frequency is within the range of 2 times the lowest value, or the bulge frequency point in the frequency-impedance curve of the resonator is outside the region of 30 MHz starting from the end of the parasitic region.
  12. 根据权利要求11所述的方法，其中：The method according to claim 11, wherein:
    选择所述凸起结构的内端的角度在35°-50°的范围内以使得：所述谐振器的频率-阻抗曲线在寄生区域结束处开始30MHz的区域内或者串联谐振频率以下60-80MHz的区间内的阻抗的最高值与最低值的差值在最低值的2倍的范围内，或者所述谐振器的频率-阻抗曲线中鼓包频率点在寄生区域结束处开始30MHz的区域之外。The angle of the inner end of the protruding structure is selected to be in the range of 35°-50° so that: the difference between the highest and lowest values of the impedance in the frequency-impedance curve of the resonator is within the range of 30 MHz starting from the end of the parasitic region or in the interval of 60-80 MHz below the series resonance frequency is within the range of 2 times the lowest value, or the bulge frequency point in the frequency-impedance curve of the resonator is outside the region of 30 MHz starting from the end of the parasitic region.
  13. 根据权利要求10所述的方法，其中：The method according to claim 10, wherein:
    在谐振器的厚度方向上，所述凸起结构设置在顶电极与压电层之间；或In the thickness direction of the resonator, the protruding structure is arranged between the top electrode and the piezoelectric layer; or
    在谐振器的厚度方向上，所述凸起结构设置在压电层与底电极之间；或In the thickness direction of the resonator, the protruding structure is arranged between the piezoelectric layer and the bottom electrode; or
    在谐振器的厚度方向上，所述凸起结构设置在顶电极之上；或In the thickness direction of the resonator, the protruding structure is arranged on the top electrode; or
    在谐振器的厚度方向上，所述凸起结构设置在底电极之下；或In the thickness direction of the resonator, the protruding structure is arranged below the bottom electrode; or
    所述凸起结构设置在压电层中。The protrusion structure is arranged in the piezoelectric layer.
  14. 根据权利要求10所述的方法，其中：The method according to claim 10, wherein:
    设置有凸起结构的步骤中，使得所述凸起结构的内端处于谐振器的声学镜的边缘的内侧。In the step of providing a protruding structure, the inner end of the protruding structure is located inside the edge of the acoustic mirror of the resonator.
  15. 一种滤波器，包括根据权利要求1-9中任一项所述的体声波谐振器。A filter comprises the bulk acoustic wave resonator according to any one of claims 1 to 9.
  16. 一种电子设备，包括根据权利要求15所述的滤波器，或者根据权利要求1-9中任一项所述的体声波谐振器。 An electronic device comprises the filter according to claim 15 or the BAW resonator according to any one of claims 1 to 9.
PCT/CN2023/097300 2022-10-24 2023-05-31 Bulk acoustic wave resonator for selecting angle of protruding structure to improve performance WO2024087628A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202211305287.X 2022-10-24
CN202211305287.XA CN115882812A (en) 2022-10-24 2022-10-24 Bulk acoustic wave resonator with raised structure angle selected to improve performance

Publications (1)

Publication Number Publication Date
WO2024087628A1 true WO2024087628A1 (en) 2024-05-02

Family

ID=85758862

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2023/097300 WO2024087628A1 (en) 2022-10-24 2023-05-31 Bulk acoustic wave resonator for selecting angle of protruding structure to improve performance

Country Status (2)

Country Link
CN (1) CN115882812A (en)
WO (1) WO2024087628A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115882812A (en) * 2022-10-24 2023-03-31 诺思(天津)微系统有限责任公司 Bulk acoustic wave resonator with raised structure angle selected to improve performance

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8456257B1 (en) * 2009-11-12 2013-06-04 Triquint Semiconductor, Inc. Bulk acoustic wave devices and method for spurious mode suppression
CN111010140A (en) * 2019-05-31 2020-04-14 天津大学 Resonator with gap structure arranged on inner side of protrusion structure and electronic equipment
CN114079430A (en) * 2020-08-12 2022-02-22 诺思(天津)微系统有限责任公司 Bulk acoustic wave resonator with laminated bump structure, method of manufacturing the same, filter, and electronic apparatus
CN114915277A (en) * 2022-06-20 2022-08-16 武汉光钜微电子有限公司 Bulk acoustic wave resonant structure, preparation method thereof and acoustic wave device
CN115882812A (en) * 2022-10-24 2023-03-31 诺思(天津)微系统有限责任公司 Bulk acoustic wave resonator with raised structure angle selected to improve performance

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8456257B1 (en) * 2009-11-12 2013-06-04 Triquint Semiconductor, Inc. Bulk acoustic wave devices and method for spurious mode suppression
CN111010140A (en) * 2019-05-31 2020-04-14 天津大学 Resonator with gap structure arranged on inner side of protrusion structure and electronic equipment
CN114079430A (en) * 2020-08-12 2022-02-22 诺思(天津)微系统有限责任公司 Bulk acoustic wave resonator with laminated bump structure, method of manufacturing the same, filter, and electronic apparatus
CN114915277A (en) * 2022-06-20 2022-08-16 武汉光钜微电子有限公司 Bulk acoustic wave resonant structure, preparation method thereof and acoustic wave device
CN115882812A (en) * 2022-10-24 2023-03-31 诺思(天津)微系统有限责任公司 Bulk acoustic wave resonator with raised structure angle selected to improve performance

Also Published As

Publication number Publication date
CN115882812A (en) 2023-03-31

Similar Documents

Publication Publication Date Title
WO2021077712A1 (en) Bulk acoustic resonator with electrode having void layer, and filter and electronic device
WO2021219050A1 (en) Resonator assembly and method for manufacturing same, semiconductor device, and electronic device
US6924717B2 (en) Tapered electrode in an acoustic resonator
WO2021120499A1 (en) Bulk acoustic resonator having electrode having gap layer and temperature compensation layer, filter, and electronic apparatus
US7994878B2 (en) Acoustic wave device and high-frequency filter using the same
CN111262540A (en) Bulk acoustic wave resonator, method of manufacturing the same, filter, and electronic apparatus
WO2022083352A1 (en) Bulk acoustic resonator and assembly, filter, and electronic device
WO2022028402A1 (en) Bulk acoustic wave resonator assembly having acoustic decoupling layer, manufacturing method, filter, and electronic device
WO2024087628A1 (en) Bulk acoustic wave resonator for selecting angle of protruding structure to improve performance
CN111355466A (en) Bulk acoustic wave resonator, filter and electronic device with multi-beam eave gap
WO2020098480A1 (en) Bulk acoustic resonator, filter and electronic device
WO2023169209A1 (en) Surface acoustic wave resonator and surface acoustic wave filter
WO2022068562A1 (en) Bulk acoustic resonator, doping concentration determination method, filter, and electronic device
WO2020134803A1 (en) Bulk acoustic wave resonator having asymmetric electrode thickness, filter, and electronic device
WO2022228385A1 (en) Bulk acoustic wave resonator having thickened electrode, filter, and electronic device
WO2020134804A1 (en) Resonator with extension structure at connection portion of top electrode, filter and electronic device
CN114696773A (en) Bulk acoustic wave resonator, method of manufacturing the same, filter, and electronic apparatus
WO2022062910A1 (en) Bulk acoustic resonator and assembly, method for adjusting electromechanical coupling coefficient difference, and filter and electronic device
WO2020140654A1 (en) Apparatus and method for adjusting performance of acoustic resonator on the basis of beam and eave dimension
CN117013979B (en) Bulk acoustic wave resonator, preparation method thereof, filter and electronic equipment
WO2023030359A1 (en) Bulk acoustic resonator comprising gap electrode, filter and electronic device
WO2022218376A1 (en) Bulk acoustic resonator having protrusion and/or recess on lower side of piezoelectric layer, and filter and electronic device
WO2022135252A1 (en) Bulk acoustic resonator having temperature compensation layer, and filter and electronic device
WO2022068552A1 (en) Bulk acoustic resonator, doping concentration determination method, filter, and electronic device
WO2022001861A1 (en) Bulk acoustic resonator having insertion layer to increase power, and filter and electronic device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23881219

Country of ref document: EP

Kind code of ref document: A1