CN114629455A - Radio frequency power amplifier - Google Patents
Radio frequency power amplifier Download PDFInfo
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- CN114629455A CN114629455A CN202210428822.4A CN202210428822A CN114629455A CN 114629455 A CN114629455 A CN 114629455A CN 202210428822 A CN202210428822 A CN 202210428822A CN 114629455 A CN114629455 A CN 114629455A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21139—An impedance adaptation circuit being added at the output of a power amplifier stage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21175—An output signal of a power amplifier being on/off switched
Abstract
The invention provides a radio frequency power amplifier, comprising: a drive stage amplifier; a power stage amplifier; and a pre-driver stage amplifier, wherein the driver stage amplifier and the power stage amplifier form a cascade structure and are configured to be turned on in a high power mode for high power transmission, and wherein the pre-driver stage amplifier is configured to be turned on in a middle and low transmission power mode for middle and low power transmission.
Description
Technical Field
The present invention relates to radio frequency power amplifiers, and in particular, to 5G radio frequency power amplifiers that improve the operating efficiency of medium and low power modes.
Background
A Power Amplifier (PA) chip is an important element in a mobile phone intelligent terminal, and its main function is to load a data signal to a specific carrier frequency point, and then amplify the signal to a certain Power, so as to meet the receiving requirement of a remote base station, and to keep the stability of data transmission.
In current 4G and 5G communication networks, radio frequency power amplifiers are widely used in terminal products such as base stations or mobile phones. The rf power amplifier is generally in the transmit uplink, and one important indicator is the operating efficiency of the rf power amplifier. The conventional radio frequency power amplifier generally focuses on the transmission efficiency under the condition of transmitting high power, while in the transmission mode of terminal equipment such as a mobile phone and the like, the radio frequency power amplifier is in the working state of medium and low power for a long time, but the working efficiency under the medium and low power mode is rarely concerned. In the high-power mode, the power consumption is large but the time is short; in the medium-low power mode, the power consumption is small but the time is long. From the viewpoint of overall power consumption, the power consumption of the medium-low power mode accounts for a large proportion. The method has the advantages that the working efficiency of the medium-low power mode is effectively improved, and the method is more meaningful and more beneficial to prolonging the service time of terminals such as mobile phones.
Conventional 5G rf power amplifiers are generally composed of two or more stages to support the transmission of a sufficiently large power signal, so as to ensure a high power gain in the high power mode. However, in the medium-low power mode, the multistage structure inevitably causes the reduction of the working efficiency.
When the conventional 5G radio frequency power amplifier is in a medium-low power mode, the working efficiency can be improved by reducing the working voltage and the working quiescent current, but the method for improving the working efficiency affects other working indexes of the radio frequency power amplifier, such as linearity, gain flatness and the like.
The problem of power consumption of 5G radio frequency power amplifiers has been a significant problem in current 5G communication networks. From the perspective of the base station, the ultrahigh power consumption directly affects the later maintenance cost of the base station. From the perspective of a terminal such as a mobile phone, the ultra-high power consumption directly affects the use time and the standby time of the mobile phone. Especially, the power consumption problem under the long-term medium and low power mode, the proportion of the power consumption is large. Therefore, it is very important to improve the working efficiency of the 5G rf power amplifier in the medium/low power mode.
Disclosure of Invention
One aspect of the present invention provides a radio frequency power amplifier, which increases a structure of a pre-driver stage in the radio frequency power amplifier, completely turns off the driver stage and the power stage in a medium-low power operating mode, so that the power consumption of the radio frequency power amplifier is zero, and only the pre-driver stage is used for transmitting signals of medium-low power, thereby greatly improving the working efficiency.
An aspect of the present invention provides a radio frequency power amplifier, including: a drive stage amplifier; a power stage amplifier; and a pre-driver stage amplifier, wherein the driver stage amplifier and the power stage amplifier form a cascade structure and are configured to be turned on in a high power mode for high power transmission, and wherein the pre-driver stage amplifier is configured to be turned on in a middle and low transmission power mode for middle and low power transmission.
An aspect of the invention provides a radio frequency power amplifier, wherein the radio frequency power amplifier further comprises a driver stage bias circuit and a power stage bias circuit, wherein the driver stage bias circuit is configured to provide a bias current for the driver stage amplifier, and the power stage bias circuit is configured to provide a bias current for the power stage amplifier.
An aspect of the present invention provides a radio frequency power amplifier, wherein the radio frequency power amplifier further comprises an input matching network, an inter-stage matching network, and an output matching network.
An aspect of the invention provides a radio frequency power amplifier, wherein the driver and power stage bias circuits and the inter-stage and output matching networks are in a high voltage mode when the radio frequency power amplifier is in a high power mode.
An aspect of the present invention provides a radio frequency power amplifier, wherein the radio frequency power amplifier further includes a pre-driver stage bias circuit and a pre-driver stage matching network.
An aspect of the invention provides a radio frequency power amplifier, wherein the pre-drive stage bias circuit and the pre-drive stage matching network are in a high voltage mode when the radio frequency power amplifier is in a medium power mode.
An aspect of the invention provides a radio frequency power amplifier, wherein the pre-drive stage bias circuit and the pre-drive stage matching network are in a high voltage mode or a low voltage mode when the radio frequency power amplifier is in a low power mode.
One aspect of the present invention provides a radio frequency power amplifier, wherein the radio frequency power amplifier further includes a bypass matching network, and wherein the bypass matching network includes any one of a pass-through structure network, a passive matching network, and a passive attenuation network.
An aspect of the invention provides a radio frequency power amplifier, wherein the bypass matching network is configured to start up when the signal strength is greater than a first threshold.
An aspect of the present invention provides a radio frequency power amplifier, wherein the radio frequency power amplifier further comprises a band switch, wherein the band switch is configured to perform radio frequency signal transmission of different frequency bands.
An aspect of the present invention provides a radio frequency power amplifier, wherein the radio frequency power amplifier further includes a single-ended double-throw switch configured between the output matching network or the pre-driver stage matching network and the band switch.
Drawings
Fig. 1 is a schematic diagram illustrating a conventional two-stage radio frequency power amplifier;
fig. 2 is a schematic diagram illustrating a radio frequency power amplifier that promotes medium to low power operating efficiency in accordance with an embodiment of the present invention;
fig. 3 is a schematic diagram illustrating a radio frequency power amplifier that promotes medium to low power operating efficiency in accordance with an embodiment of the present invention;
fig. 4 is a schematic diagram illustrating the operating efficiency of a radio frequency power amplifier according to an embodiment of the present invention;
fig. 5 is a schematic diagram illustrating a radio frequency power amplifier that promotes medium to low power operating efficiency in accordance with an embodiment of the present invention; and
fig. 6 is a schematic diagram illustrating a radio frequency power amplifier that improves medium to low power operating efficiency according to an embodiment of the present invention.
Detailed Description
Before proceeding with the following detailed description, it may be advantageous to set forth definitions of certain words and phrases used throughout this patent document. The terms "couple," "connect," and derivatives thereof refer to any direct or indirect communication or connection between two or more elements, whether or not those elements are in physical contact with one another. The terms "transmit," "receive," and "communicate," as well as derivatives thereof, encompass both direct and indirect communication. The terms "include" and "comprise," as well as derivatives thereof, mean inclusion without limitation. The term "or" is inclusive, meaning and/or. The phrase "associated with … …" and derivatives thereof means including, included within … …, interconnected, contained within … …, connected or connected with … …, coupled or coupled with … …, in communication with … …, mated, interwoven, juxtaposed, proximate, bound or bound with … …, having an attribute, having a relationship or having a relationship with … …, and the like. The term "controller" refers to any device, system, or part thereof that controls at least one operation. Such a controller may be implemented in hardware, or a combination of hardware and software and/or firmware. The functionality associated with any particular controller may be centralized or distributed, whether locally or remotely. The phrase "at least one of, when used with a list of items, means that different combinations of one or more of the listed items can be used and only one item in the list can be required. For example, "at least one of A, B, C" includes any one of the following combinations: A. b, C, A and B, A and C, B and C, A and B and C.
Definitions for other specific words and phrases are provided throughout this patent document. Those of ordinary skill in the art should understand that in many, if not most instances, such definitions apply to prior, as well as future uses of such defined words and phrases.
In this patent document, the application combination of modules and the division levels of sub-modules are only used for illustration, and the application combination of modules and the division levels of sub-modules may have different manners without departing from the scope of the present disclosure.
In a conventional 5G mobile phone module or a 5G other application module, both a 4G signal mode and a 5G signal mode are supported. When a 4G uplink signal needs to be transmitted, the 4G radio frequency chip independently transmits the uplink signal; when the 5G uplink signal needs to be transmitted, the plug-in 5G radio frequency chip transmits the uplink signal. The radio frequency uplink transmission link of a 5G handset module or other 5G application modules is usually formed by combining a plurality of 4G and 5G radio frequency chips, which not only increases the cost of the whole module, but also increases the complexity of the design of the whole module, and simultaneously, a plurality of DC-DC power supply chips are required to supply power, and additional power consumption is also increased.
Fig. 1 is a schematic diagram illustrating a conventional two-stage radio frequency power amplifier.
In fig. 1, for convenience, a two-stage rf power amplifier is taken as an example for illustration, but it should be clear to those skilled in the art that the present invention is also applicable to more multi-stage power amplifier structures. In the drawings, a two-stage rf power amplifier made of 5G gallium arsenide (GaAs) material is taken as an example for illustration, but it should be understood by those skilled in the art that the rf power amplifier referred to in the present application may also be implemented by other CMOS, GeSi, etc. processes.
The GaAs radio frequency power amplifier mainly comprises a driving stage, a power stage, a driving stage bias circuit, a power stage bias circuit, an input matching network, an inter-stage matching network and an output matching network. Wherein the driver stage Bias circuit provides a Bias current (Bias1_5G) for the driver stage and the power stage Bias circuit provides a Bias current (Bias2_5G) for the power stage. The radio frequency signal is connected to a frequency Band (Band) switch after passing through an output matching network to switch the frequency Band. The dashed line box represents the structure of the power amplifying part of the whole radio frequency power amplifier, and radio frequency signals of different frequency bands are transmitted through the frequency band selector switch.
The overall power consumption of the radio frequency power amplifier mainly comprises the working Current (Current1) and the working voltage (VCC1) of the driving stage, and the working Current (Current2) and the working voltage (VCC2) of the power stage. When the radio frequency power amplifier is in a high power mode, higher transmission power and higher power gain are realized by increasing VCC1 and VCC2, and simultaneously increasing Current1 and Current 2. When the radio frequency power amplifier is in a medium-low power mode, the purpose of reducing power consumption is achieved by reducing VCC1 and VCC2, and reducing Current1 and Current2 at the same time.
Typically, in the high power mode, the power stage consumes about 8-10 times more power than the driver stage. In the middle-low power operation mode, even if the way of reducing the power consumption of the power stage is realized by reducing Current2 and VCC2, the power consumption of the power stage can be about 4-5 times of that of the driving stage, and the overall power consumption reduction effect is very limited. Therefore, the conventional method for reducing the medium-low power consumption is still very limited, and cannot completely improve the operating efficiency of the rf power amplifier in the medium-low power operating mode.
When the rf power amplifier operates at a medium-low power, conventional methods for improving the operating efficiency (including but not limited to the above method) are to reduce the operating Current or reduce the operating voltage VCC to improve the operating efficiency. However, the power consumption of the power stage in this manner is a large proportion, and the purpose of reducing the power consumption completely cannot be achieved. Because the radio frequency power amplifier is composed of two-stage or multi-stage cascade structures, each stage of structure must be kept in an open state to normally work. Even by reducing the operating current and operating voltage, there is still a simultaneous two-stage or multi-stage power consumption.
The patent provides a structure of 5G radio frequency power amplifier, all has higher work efficiency's solution under being applicable to multiple power mode.
According to the embodiment of the invention, a structure of the pre-drive stage is added in the radio frequency power amplifier, the power consumption of the drive stage and the power stage is zero by closing the drive stage and the power stage under the working mode of medium and low power, and the signal transmission of medium and low power is carried out only by using the pre-drive stage, so that the working efficiency is greatly improved. Meanwhile, higher working efficiency is kept in all power ranges, so that the method has more flexible and wider adaptability, and the urgent requirements of reducing power consumption of terminals such as base stations, mobile phones and the like under 5G communication are met.
Specifically, according to the embodiment of the present invention, the cascade structure of the driving stage and the power stage is responsible for high power transmission of the power amplifier, and at this time, in the high power mode, the transmission efficiency is higher. When the power amplifier is in the middle-low emission power mode, the transistors of the driving stage and the power stage are closed, the power consumption of the transistors is enabled to be zero, and the pre-driving stage is used for conducting middle-low power emission. When the power amplifier is in a low-power or extremely-low-power range, the working voltage and the working current of the pre-driving stage are reduced simultaneously, so that the working efficiency of the power amplifier is further improved. Therefore, the working efficiency of the antenna can be adjusted in all the whole transmitting power ranges, and the antenna can be kept in a consistent and high state. The scheme is characterized in that the working efficiency of the driving stage and the power stage is greatly improved by closing the driving stage and the power stage, and meanwhile, the working efficiency is kept higher in all power ranges.
Fig. 2 is a schematic diagram illustrating a radio frequency power amplifier that improves medium to low power operating efficiency according to an embodiment of the present invention.
Referring to fig. 2, a radio frequency power amplifier according to an embodiment of the present invention includes: a radio frequency power amplifying module and a frequency band switch in a dashed frame. The radio frequency power amplification module is composed of a driving stage amplifier, a power stage amplifier, a pre-driving stage amplifier, a driving stage bias circuit, a power stage bias circuit, a pre-driving stage bias circuit, an input matching network, an inter-stage matching network and an output matching network.
In fig. 2, the dashed boxes represent the rf power amplifying modules of the whole rf power amplifier, and the main signal amplifying port P1 and the auxiliary signal amplifying port P2 of the rf power amplifier are respectively connected to the band switches for transmitting rf signals of different bands. The band switch includes 4 bands (B1/B2/B3/B4), however, it should be understood by those skilled in the art that one or more bands may be included, and the number is not limited in the present invention, and here, the B1/B2/B3/B4 band is a schematic illustration of 4 bands, and the band may be used for a 4G band or a 5G band.
According to the embodiment of the invention, when the radio frequency power amplifier is in a high-power mode, the pre-driving stage is closed, the radio frequency signal enters the input matching network, is amplified by the driving stage in the first stage, then enters the interstage matching network, is amplified by the power stage in the second stage, and finally passes through the output matching network to send the high-power radio frequency signal to the port P1. Wherein the driver stage Bias circuit provides a Bias current (Bias1_5G) for the driver stage and the power stage Bias circuit provides a Bias current (Bias2_5G) for the power stage. When the power amplifier is in a medium-low power mode (a medium-power mode or a low-power mode), the driving stage and the power stage are closed, the pre-driving stage is opened, and the pre-driving stage bias circuit provides bias current for the pre-driving stage amplifier. After being amplified by the pre-driver stage, the radio-frequency signal enters the pre-driver stage matching network and then is sent to the port P2 by medium and low power radio-frequency signals. The radio frequency signals are respectively connected to the frequency band switch by the ports P1 and P2 for switching the frequency band.
A principle analysis of a radio frequency power amplifier according to an embodiment of the present invention is performed as follows.
When the radio frequency power amplifier is in a high power mode, the pre-driving stage is closed, the driving stage and the power stage are opened, and the working voltage is in a high voltage mode, so that high transmitting power and high power gain are realized. The overall power consumption at this time mainly consists of the working Current (Current1) and the working voltage (VCC1) of the driver stage, and the working Current (Current2) and the working voltage (VCC2) of the power stage, and the working efficiency at this time is very high, see the high-power high-voltage state of the D mode in table 1. According to an embodiment of the present invention, the operating voltage (VCC1) and the operating voltage (VCC2) are provided by an inter-stage matching network and an output matching network, respectively, but it will be understood by those skilled in the art that the operating voltage (VCC1) and the operating voltage (VCC2) may be provided by other circuit components.
When the radio frequency power amplifier is in the medium-low power mode, if the pre-driving stage is turned off, the driving stage and the power stage are turned on, and the working voltage is in the high-voltage mode, at this time, because the whole power consumption is higher by the combination of the driving stage and the power stage, and the transmitting power is very low, the actual working efficiency is extremely low, which is shown in the medium-low power high-voltage state of the D mode in table 1.
When the radio frequency power amplifier is in a medium-low power mode, if the pre-driving stage is closed, the driving stage and the power stage are opened, and the purpose of reducing power consumption is achieved by reducing VCC1 and VCC2 and reducing Current1 and Current2 at the same time. The power consumption in this manner is reduced, but not completely eliminated, and still accounts for a significant proportion. The operating efficiency of the rf power amplifier is also very low, see the low voltage state of the C mode in table 1.
When the radio frequency power amplifier is in a medium power mode, the bias circuit of the pre-drive stage is turned on, the drive stage and the power stage are turned off at the same time, and the working voltage is kept in a high voltage state to provide enough power gain and moderate transmitting power. Since the power consumption of the driving stage and the power stage is zero, only the pre-driving stage is started, and at the moment, the power consumption is moderate, the transmitting power is moderate, the relative working efficiency is high, and the mode B in the table 1 shows a medium-power high-voltage state.
When the radio frequency power amplifier is in a low power mode, the bias circuit of the pre-drive stage is turned on, the drive stage and the power stage are turned off, and the working voltage is kept in a high voltage state to provide enough power gain and moderate transmitting power. Since the power consumption of the driving stage and the power stage is zero, only the pre-driving stage is turned on, and at this time, the power consumption is moderate, the transmission power is low, and the relative working efficiency is in a moderate state, which is shown in a low-power high-voltage state of a B mode in table 1.
When the radio frequency power amplifier is in a low power mode, the bias circuit of the pre-drive stage is turned on, the drive stage and the power stage are turned off, and the working voltage is kept in a low voltage state to provide available power gain and available transmission power. Since the power consumption of the driver stage and the power stage is zero, only the pre-driver stage is turned on, and the operating voltage is in a low-voltage state at this time, the power consumption in this manner is the lowest, and the relative operating efficiency is higher, see the low-power low-voltage state of the a mode in table 1.
TABLE 1 working efficiency table for RF power amplifier applied in various power ranges
In summary, by adding the pre-driving stage to the rf power amplifier, the problem of working efficiency of the rf power amplifier in the medium-low power range is effectively improved, so that the rf power amplifier can be kept in a higher working efficiency state in all power ranges.
Fig. 3 is a schematic diagram illustrating a radio frequency power amplifier that improves medium to low power operating efficiency according to an embodiment of the present invention.
Referring to fig. 3, a radio frequency power amplifier according to an embodiment of the present invention includes: a radio frequency power amplifying module and a frequency band switch in a dashed frame. The radio frequency power amplification module is composed of a driving stage amplifier, a power stage amplifier, a pre-driving stage amplifier, a driving stage bias circuit, a power stage bias circuit, a pre-driving stage bias circuit, an input matching network, an inter-stage matching network and an output matching network.
In fig. 3, the embodiment shown differs from the embodiment in fig. 2 at the band switch. According to the embodiment shown in fig. 3, a single-ended double throw (SP2T) switch is added to the band switch, which can serve as a higher isolation for the P1 and P2 ports. In addition, the discrete single-end double-throw switch is more flexible in practical application, and the design difficulty is reduced.
Fig. 4 is a schematic diagram illustrating the operating efficiency of a radio frequency power amplifier according to an embodiment of the present invention.
Referring to fig. 4, the relationship between the operating efficiency of the radio frequency power amplifier and the power adaptation range is shown. The abscissa is the power adaptation range, which is the output power range of the power amplifier from left to right, respectively the low power range, the medium power range, and the high power range, in dBm. The ordinate is the efficiency of work (PAE) in%. The conventional two-stage or multi-stage structure forms a 5G radio frequency power amplifier, and the working efficiency curve is D when the power amplifier is in a high power mode. When in the high power mode range, the high working efficiency is kept. When in the medium to low power mode, the operating efficiency is at its lowest. By reducing the working voltage and the working current, the working efficiency is improved at medium and low power (see a dotted line C), but the improvement effect is not obvious. According to the technical scheme of adding the pre-drive stage, the drive stage and the power stage are closed simultaneously within a medium-low power range, and the curve of starting the pre-drive stage is B. In the low power or extremely low power range, the working efficiency is further improved by reducing the working voltage and the working current of the pre-driving stage (see the dotted line A). Therefore, in the range of the transmitting power from small to large, the power efficiency curve is transited from A to D, so that the working efficiency in all power ranges is kept at a higher level.
Fig. 5 is a schematic diagram illustrating a radio frequency power amplifier that improves medium to low power operating efficiency according to an embodiment of the present invention.
Referring to fig. 5, a radio frequency power amplifier according to an embodiment of the present invention includes: a radio frequency power amplifying module and a frequency band switch in a dashed frame. The radio frequency power amplification module is composed of a drive stage amplifier, a power stage amplifier, a drive stage bias circuit, a power stage bias circuit, an input matching network, an inter-stage matching network, an output matching network and a bypass matching network.
In the embodiment of fig. 5, the signal may be transmitted to the P2 port by bypassing the matching network. Wherein the bypass matching network comprises: 1) a through fabric network; 2) a passive matching network; 3) any one of passive attenuation networks.
According to the embodiment of fig. 5, the rf signal, without being amplified, passes directly through the input bypass matching network to the P2 port. Under the conditions that the distance between a mobile phone terminal and a base station is very close, the signal strength is good (for example, greater than a first threshold value), and the mobile phone terminal and the like can receive signals without amplification, the structure is started to transmit short-distance radio frequency signals under the condition that no power consumption of a radio frequency power amplifier is generated.
Fig. 6 is a schematic diagram illustrating a radio frequency power amplifier that improves medium to low power operating efficiency according to an embodiment of the present invention.
Referring to fig. 6, a radio frequency power amplifier according to an embodiment of the present invention includes: a radio frequency power amplifying module and a frequency band switch in a dashed frame. The radio frequency power amplification module is composed of a drive stage amplifier, a power stage amplifier, a drive stage bias circuit, a power stage bias circuit, an input matching network, an inter-stage matching network, an output matching network and a bypass matching network.
In fig. 6, the embodiment shown differs from the embodiment in fig. 5 at the band switch. According to the embodiment shown in fig. 6, a single-ended double throw (SP2T) switch is added at the band switch, which can serve as a higher isolation for the P1 and P2 ports. In addition, the discrete single-end double-throw switch is more flexible in practical application, and the design difficulty is reduced.
Although the present disclosure has been described with exemplary embodiments, various changes and modifications may be suggested to one skilled in the art. The present disclosure is intended to embrace such alterations and modifications as fall within the scope of the appended claims.
None of the description in this specification should be read as implying that any particular element, step, or function is an essential element which must be included in the claim scope. The scope of patented subject matter is defined only by the claims.
Claims (11)
1. A radio frequency power amplifier, comprising:
a drive stage amplifier;
a power stage amplifier; and
the amplifier of the pre-driver stage is,
wherein the driver stage amplifier and the power stage amplifier form a cascade structure and are configured to be turned on in a high power mode for high power transmission, an
Wherein the pre-driver stage amplifier is configured to turn on in a mid-low transmit power mode for mid-low power transmission.
2. The radio frequency power amplifier of claim 1 wherein the radio frequency power amplifier further comprises a driver stage bias circuit and a power stage bias circuit,
wherein the driver stage bias circuit is configured to provide a bias current to the driver stage amplifier and the power stage bias circuit is configured to provide a bias current to the power stage amplifier.
3. The radio frequency power amplifier of claim 1 wherein the radio frequency power amplifier further comprises an input matching network, an inter-stage matching network, and an output matching network.
4. The radio frequency power amplifier of claim 2 wherein the driver and power stage bias circuits and the inter-stage and output matching networks are in a high voltage mode when the radio frequency power amplifier is in a high power mode.
5. The radio frequency power amplifier of claim 1 wherein the radio frequency power amplifier further comprises a pre-driver stage bias circuit and a pre-driver stage matching network.
6. The radio frequency power amplifier of claim 5, wherein the pre-drive stage bias circuit and pre-drive stage matching network are in a high voltage mode when the radio frequency power amplifier is in a medium power mode.
7. The radio frequency power amplifier of claim 5, wherein the pre-drive stage bias circuit and pre-drive stage matching network are in a high voltage mode or a low voltage mode when the radio frequency power amplifier is in a low power mode.
8. The radio frequency power amplifier of claim 1 wherein the radio frequency power amplifier further comprises a bypass matching network,
the bypass matching network comprises any one of a straight-through structure network, a passive matching network and a passive attenuation network.
9. The radio frequency power amplifier of claim 8 wherein the bypass matching network is configured to start when the signal strength is greater than a first threshold.
10. The radio frequency power amplifier of claim 1 wherein the radio frequency power amplifier further comprises a band switch, wherein the band switch is configured for radio frequency signal transmission of different frequency bands.
11. The radio frequency power amplifier of claim 3, 5 or 10 wherein the radio frequency power amplifier further comprises a single-ended double-throw switch configured between the output matching network or the pre-driver stage matching network and the band switch.
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| CN202210428822.4A CN114629455A (en) | 2022-04-22 | 2022-04-22 | Radio frequency power amplifier |
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| CN202210428822.4A CN114629455A (en) | 2022-04-22 | 2022-04-22 | Radio frequency power amplifier |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210428822.4A Pending CN114629455A (en) | 2022-04-22 | 2022-04-22 | Radio frequency power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114629455A (en) |
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2022
- 2022-04-22 CN CN202210428822.4A patent/CN114629455A/en active Pending
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