CN114628612A - Silicon-based OLED micro-display and preparation method thereof - Google Patents

Silicon-based OLED micro-display and preparation method thereof Download PDF

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Publication number
CN114628612A
CN114628612A CN202210254461.6A CN202210254461A CN114628612A CN 114628612 A CN114628612 A CN 114628612A CN 202210254461 A CN202210254461 A CN 202210254461A CN 114628612 A CN114628612 A CN 114628612A
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China
Prior art keywords
layer
silicon
oled
ocr
packaging
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CN202210254461.6A
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Chinese (zh)
Inventor
李成志
曹君
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Semiconductor Integrated Display Technology Co Ltd
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Semiconductor Integrated Display Technology Co Ltd
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Priority to CN202210254461.6A priority Critical patent/CN114628612A/en
Publication of CN114628612A publication Critical patent/CN114628612A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8428Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention discloses a silicon-based OLED micro-display which comprises a silicon-based CMOS drive circuit substrate, an OLED structure arranged on the silicon-based CMOS drive circuit substrate, an encapsulation layer arranged on the silicon-based CMOS drive circuit substrate and covering the OLED structure, a first OC layer arranged on the encapsulation layer, a colored glue layer arranged on the first OC layer, a second OC layer arranged on the colored glue layer, an OCR layer arranged on the second OC layer, a glass cover plate arranged on the OCR layer and isolation columns arranged on the encapsulation layer, wherein the isolation columns are arranged in a plurality and all the isolation columns are distributed on the periphery of the outer sides of the first OC layer, the colored glue layer and the second OC layer. According to the silicon-based OLED micro-display, the isolation column is arranged to support the glass cover plate, so that the parallelism between the OLED layer and the glass cover plate can be improved, and the light emitting rate of an OLED device is ensured. The invention also provides a preparation method of the silicon-based OLED micro-display.

Description

Silicon-based OLED micro-display and preparation method thereof
Technical Field
The invention belongs to the technical field of micro-display, and particularly relates to a silicon-based OLED micro-display and a preparation method thereof.
Background
Micro OLED (Organic Light Emitting Display) is called black horse of next generation Display technology, and is now widely used in military markets such as helmet-mounted helmets, guns, night vision devices, etc., and with the application of new technologies such as AR/VR and autopilot, Micro OLED microdisplays will grow explosively. Most of the existing terminal products in the market are head-mounted or wearable devices. In the micro-display manufacturing process, when CG Glass and a wafer are laminated by using an ocr (optical Clear resin) optical adhesive, the parallelism between an OLED layer and a Glass cover plate is deteriorated, and the light extraction rate of an OLED device is affected.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a silicon-based OLED micro-display, aiming at improving the parallelism of an OLED layer and a glass cover plate.
In order to achieve the purpose, the invention adopts the technical scheme that: silicon-based OLED micro-display, including silicon-based CMOS drive circuit base plate, set up OLED structure on silicon-based CMOS drive circuit base plate, set up on silicon-based CMOS drive circuit base plate and cover OLED structure's packaging layer, set up first OC layer on the packaging layer, set up various glue film on first OC layer, set up the second OC layer on various glue film, set up OCR layer on second OC layer, set up glass apron on OCR layer and set up in insulated column on the packaging layer, insulated column set up a plurality ofly and all insulated columns distribute be in around the outside on first OC layer, various glue film and second OC layer, the highly equalling to first OC layer, various glue film, second OC layer and the four thickness sums on OCR layer of insulated column.
The second OC layer covers the color adhesive layer and the first OC layer.
The OCR layer covers the second OC layer, the isolation column and the packaging layer.
The invention also provides a preparation method of the silicon-based OLED micro-display, which comprises the following steps:
s1, manufacturing a CMOS circuit on the silicon substrate to form a silicon-based CMOS drive circuit substrate;
s2, preparing an OLED structure on the silicon-based CMOS driving circuit substrate;
s3, preparing a packaging layer on the whole surface;
s4, preparing an isolation column on the packaging layer;
s5, sequentially preparing a first OC layer, a color adhesive layer and a second OC layer on the packaging layer;
s6, preparing an OCR layer on the second OC layer, and finally attaching a glass cover plate on the OCR layer.
According to the silicon-based OLED micro-display, the isolation column is arranged to support the glass cover plate, so that the parallelism between the OLED layer and the glass cover plate can be improved, and the light emitting rate of an OLED device is ensured.
Drawings
The description includes the following figures, the contents shown are respectively:
FIG. 1 is a schematic diagram of a silicon-based OLED microdisplay layer structure according to the present invention;
FIG. 2 is a top view of a silicon-based OLED microdisplay of the present invention;
labeled as: 1. a silicon-based CMOS drive circuit substrate; 2. an OLED structure; 3. a packaging layer; 4. a first OC layer; 5. a color glue layer; 6. a second OC layer; 7. an OCR layer; 8. a glass cover plate; 9. and (4) isolating the column.
Detailed Description
The following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings for a purpose of helping those skilled in the art to more fully, accurately and deeply understand the concept and technical solution of the present invention and to facilitate its implementation.
It should be noted that, in the following embodiments, the "first" and "second" do not represent an absolute distinction relationship in structure and/or function, nor represent a sequential execution order, but merely for convenience of description.
As shown in fig. 1 and fig. 2, the present invention provides a silicon-based OLED micro-display, which comprises a silicon-based CMOS driving circuit substrate 1, an OLED structure 2 disposed on the silicon-based CMOS driving circuit substrate 1, an encapsulation layer 3 disposed on the silicon-based CMOS driving circuit substrate 1 and covering the OLED structure 2, a first OC layer 4 disposed on the encapsulation layer 3, a color adhesive layer 5 disposed on the first OC layer 4, a second OC layer 6 disposed on the color adhesive layer 5, set up OCR layer 7 on second OC layer 6, set up glass apron 8 on OCR layer 7 and set up in isolating column 9 on encapsulation layer 3, isolating column 9 sets up a plurality ofly and all isolating columns 9 distribute around the outside of first OC layer 4, various gluey layer 5 and second OC layer 6, the height of isolating column 9 equals the sum of first OC layer 4, various gluey layer 5, second OC layer 6 and OCR layer 7 four thickness, the height of isolating column 9 also is the vertical distance between encapsulation layer 3 and the glass apron 8. The isolation column 9 is in contact with the glass cover plate 8, and the isolation column 9 supports the glass cover plate 8, so that the parallelism between the OLED layer and the glass cover plate 8 can be improved, and the light-emitting rate of an OLED device is ensured.
Specifically, as shown in fig. 1 and 2, the second OC layer 6 covers the color paste layer 5 and the first OC layer 4, and the OCR layer 7 covers the second OC layer 6, the spacers 9, and the encapsulation layer 3. The isolation columns 9 are vertically arranged on the packaging layer 3, the isolation columns 9 are located between the packaging layer 3 and the glass cover plate 8, all the isolation columns 9 simultaneously support the glass cover plate 8, parallelism of the glass cover plate 8 and the packaging layer 3 can be guaranteed to meet requirements, and product quality is improved.
As shown in fig. 1 and 2, it is preferable that the isolation pillars 9 have a hemispherical structure, an outer circumferential surface of the isolation pillars 9 is in contact with the glass cover plate 8, and an end portion of the isolation pillars 9 is connected to the encapsulation layer 3. The diameter of the isolation columns 9 is 5-10um, and the distance between two adjacent isolation columns 9 is 4-5 um.
As shown in fig. 1 and 2, in the present embodiment, ten spacers 9 are provided.
The invention also provides a preparation method of the silicon-based OLED micro-display, which comprises the following steps:
s1, manufacturing a CMOS circuit on the silicon substrate to form a silicon-based CMOS drive circuit substrate 1;
s2, preparing an OLED structure 2 on the silicon-based CMOS driving circuit substrate 1;
s3, preparing a packaging layer 3 on the whole surface;
s4, preparing an isolation column 9 on the packaging layer 3;
s5, sequentially preparing a first OC layer 4, a color glue layer 5 and a second OC layer 6 on the packaging layer 3;
s6, preparing an OCR layer 7 on the second OC layer 6, and finally attaching a glass cover plate 8 on the OCR layer 7.
In the step S4, the isolation pillars 9 with a diameter of 5-10um and a hemispherical shape are printed at an interval of 4-5um around the OLED display area by an inkjet printing method, so that the height of the isolation pillars 9 is equal to the sum of the thicknesses of the first OC layer 4, the color paste layer 5, the second OC layer 6 and the OCR layer 7, thereby fixing the parallelism of the glass cover plate 8 and the encapsulation layer 3.
The invention is described above with reference to the accompanying drawings. It is to be understood that the specific implementations of the invention are not limited in this respect. Any insubstantial improvements over the methods and technical solutions of the present invention; the above-mentioned conception and technical solutions of the present invention may be directly applied to other fields without any improvement, and all of them are within the scope of the present invention.

Claims (4)

1. Silica-based OLED microdisplay, including silica-based CMOS drive circuit base plate, set up the OLED structure on silica-based CMOS drive circuit base plate, set up on silica-based CMOS drive circuit base plate and cover the encapsulating layer of OLED structure, set up first OC layer on the encapsulating layer, set up the various glue film on first OC layer, set up the second OC layer on various glue film, set up the OCR layer on second OC layer and set up the glass apron on OCR layer, its characterized in that: the packaging structure further comprises a plurality of isolation columns arranged on the packaging layer, wherein all the isolation columns are distributed on the periphery of the outer sides of the first OC layer, the colored glue layer and the second OC layer, and the height of each isolation column is equal to the sum of the thicknesses of the first OC layer, the colored glue layer, the second OC layer and the OCR layer.
2. A silicon-based OLED micro-display according to claim 1, characterized in that: the second OC layer covers the color adhesive layer and the first OC layer.
3. A silicon-based OLED micro-display according to claim 1, characterized in that: the OCR layer covers the second OC layer, the isolation column and the packaging layer.
4. A method of fabricating a silicon-based OLED micro-display according to any of claims 1 to 3, comprising the steps of:
s1, manufacturing a CMOS circuit on the silicon substrate to form a silicon-based CMOS drive circuit substrate;
s2, preparing an OLED structure on the silicon-based CMOS driving circuit substrate;
s3, preparing a packaging layer on the whole surface;
s4, preparing an isolation column on the packaging layer;
s5, sequentially preparing a first OC layer, a color glue layer and a second OC layer on the packaging layer;
s6, preparing an OCR layer on the second OC layer, and finally attaching a glass cover plate on the OCR layer.
CN202210254461.6A 2022-03-15 2022-03-15 Silicon-based OLED micro-display and preparation method thereof Pending CN114628612A (en)

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CN114628612A true CN114628612A (en) 2022-06-14

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110207257A1 (en) * 2010-02-25 2011-08-25 Fujifilm Corporation Manufacturing method for a solid-state image pickup device
TW201320202A (en) * 2011-11-02 2013-05-16 Tpk Touch Solutions Xiamen Inc Laminating structure, electronic device having the laminating structure and laminating method thereof
CN108172604A (en) * 2018-01-03 2018-06-15 京东方科技集团股份有限公司 A kind of OLED encapsulating structures, packaging method, display device
CN211605158U (en) * 2020-04-15 2020-09-29 江苏集萃有机光电技术研究所有限公司 OLED (organic light emitting diode) micro display panel and display device
CN112420963A (en) * 2020-12-04 2021-02-26 深圳市芯视佳半导体科技有限公司 Silicon-based OLED micro-display with improved contrast and preparation method thereof
CN113594397A (en) * 2021-08-05 2021-11-02 安徽熙泰智能科技有限公司 Micro OLED display structure and preparation method thereof
CN215731725U (en) * 2021-09-10 2022-02-01 安徽熙泰智能科技有限公司 Display structure for improving performance difference between different organic layers in Micro OLED
CN215815883U (en) * 2021-09-24 2022-02-11 安徽熙泰智能科技有限公司 OLED micro-display structure
CN215815882U (en) * 2021-09-10 2022-02-11 安徽熙泰智能科技有限公司 Structure for improving light-emitting parallelism of Micro OLED (organic light emitting diode)

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110207257A1 (en) * 2010-02-25 2011-08-25 Fujifilm Corporation Manufacturing method for a solid-state image pickup device
TW201320202A (en) * 2011-11-02 2013-05-16 Tpk Touch Solutions Xiamen Inc Laminating structure, electronic device having the laminating structure and laminating method thereof
CN108172604A (en) * 2018-01-03 2018-06-15 京东方科技集团股份有限公司 A kind of OLED encapsulating structures, packaging method, display device
CN211605158U (en) * 2020-04-15 2020-09-29 江苏集萃有机光电技术研究所有限公司 OLED (organic light emitting diode) micro display panel and display device
CN112420963A (en) * 2020-12-04 2021-02-26 深圳市芯视佳半导体科技有限公司 Silicon-based OLED micro-display with improved contrast and preparation method thereof
CN113594397A (en) * 2021-08-05 2021-11-02 安徽熙泰智能科技有限公司 Micro OLED display structure and preparation method thereof
CN215731725U (en) * 2021-09-10 2022-02-01 安徽熙泰智能科技有限公司 Display structure for improving performance difference between different organic layers in Micro OLED
CN215815882U (en) * 2021-09-10 2022-02-11 安徽熙泰智能科技有限公司 Structure for improving light-emitting parallelism of Micro OLED (organic light emitting diode)
CN215815883U (en) * 2021-09-24 2022-02-11 安徽熙泰智能科技有限公司 OLED micro-display structure

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