CN114628612A - Silicon-based OLED micro-display and preparation method thereof - Google Patents
Silicon-based OLED micro-display and preparation method thereof Download PDFInfo
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- CN114628612A CN114628612A CN202210254461.6A CN202210254461A CN114628612A CN 114628612 A CN114628612 A CN 114628612A CN 202210254461 A CN202210254461 A CN 202210254461A CN 114628612 A CN114628612 A CN 114628612A
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- oled
- ocr
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 36
- 239000010703 silicon Substances 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 238000002955 isolation Methods 0.000 claims abstract description 25
- 239000011521 glass Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000003292 glue Substances 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 108
- 238000004806 packaging method and process Methods 0.000 claims description 20
- 239000012790 adhesive layer Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 8
- 239000000377 silicon dioxide Substances 0.000 claims 4
- 238000005538 encapsulation Methods 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a silicon-based OLED micro-display which comprises a silicon-based CMOS drive circuit substrate, an OLED structure arranged on the silicon-based CMOS drive circuit substrate, an encapsulation layer arranged on the silicon-based CMOS drive circuit substrate and covering the OLED structure, a first OC layer arranged on the encapsulation layer, a colored glue layer arranged on the first OC layer, a second OC layer arranged on the colored glue layer, an OCR layer arranged on the second OC layer, a glass cover plate arranged on the OCR layer and isolation columns arranged on the encapsulation layer, wherein the isolation columns are arranged in a plurality and all the isolation columns are distributed on the periphery of the outer sides of the first OC layer, the colored glue layer and the second OC layer. According to the silicon-based OLED micro-display, the isolation column is arranged to support the glass cover plate, so that the parallelism between the OLED layer and the glass cover plate can be improved, and the light emitting rate of an OLED device is ensured. The invention also provides a preparation method of the silicon-based OLED micro-display.
Description
Technical Field
The invention belongs to the technical field of micro-display, and particularly relates to a silicon-based OLED micro-display and a preparation method thereof.
Background
Micro OLED (Organic Light Emitting Display) is called black horse of next generation Display technology, and is now widely used in military markets such as helmet-mounted helmets, guns, night vision devices, etc., and with the application of new technologies such as AR/VR and autopilot, Micro OLED microdisplays will grow explosively. Most of the existing terminal products in the market are head-mounted or wearable devices. In the micro-display manufacturing process, when CG Glass and a wafer are laminated by using an ocr (optical Clear resin) optical adhesive, the parallelism between an OLED layer and a Glass cover plate is deteriorated, and the light extraction rate of an OLED device is affected.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a silicon-based OLED micro-display, aiming at improving the parallelism of an OLED layer and a glass cover plate.
In order to achieve the purpose, the invention adopts the technical scheme that: silicon-based OLED micro-display, including silicon-based CMOS drive circuit base plate, set up OLED structure on silicon-based CMOS drive circuit base plate, set up on silicon-based CMOS drive circuit base plate and cover OLED structure's packaging layer, set up first OC layer on the packaging layer, set up various glue film on first OC layer, set up the second OC layer on various glue film, set up OCR layer on second OC layer, set up glass apron on OCR layer and set up in insulated column on the packaging layer, insulated column set up a plurality ofly and all insulated columns distribute be in around the outside on first OC layer, various glue film and second OC layer, the highly equalling to first OC layer, various glue film, second OC layer and the four thickness sums on OCR layer of insulated column.
The second OC layer covers the color adhesive layer and the first OC layer.
The OCR layer covers the second OC layer, the isolation column and the packaging layer.
The invention also provides a preparation method of the silicon-based OLED micro-display, which comprises the following steps:
s1, manufacturing a CMOS circuit on the silicon substrate to form a silicon-based CMOS drive circuit substrate;
s2, preparing an OLED structure on the silicon-based CMOS driving circuit substrate;
s3, preparing a packaging layer on the whole surface;
s4, preparing an isolation column on the packaging layer;
s5, sequentially preparing a first OC layer, a color adhesive layer and a second OC layer on the packaging layer;
s6, preparing an OCR layer on the second OC layer, and finally attaching a glass cover plate on the OCR layer.
According to the silicon-based OLED micro-display, the isolation column is arranged to support the glass cover plate, so that the parallelism between the OLED layer and the glass cover plate can be improved, and the light emitting rate of an OLED device is ensured.
Drawings
The description includes the following figures, the contents shown are respectively:
FIG. 1 is a schematic diagram of a silicon-based OLED microdisplay layer structure according to the present invention;
FIG. 2 is a top view of a silicon-based OLED microdisplay of the present invention;
labeled as: 1. a silicon-based CMOS drive circuit substrate; 2. an OLED structure; 3. a packaging layer; 4. a first OC layer; 5. a color glue layer; 6. a second OC layer; 7. an OCR layer; 8. a glass cover plate; 9. and (4) isolating the column.
Detailed Description
The following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings for a purpose of helping those skilled in the art to more fully, accurately and deeply understand the concept and technical solution of the present invention and to facilitate its implementation.
It should be noted that, in the following embodiments, the "first" and "second" do not represent an absolute distinction relationship in structure and/or function, nor represent a sequential execution order, but merely for convenience of description.
As shown in fig. 1 and fig. 2, the present invention provides a silicon-based OLED micro-display, which comprises a silicon-based CMOS driving circuit substrate 1, an OLED structure 2 disposed on the silicon-based CMOS driving circuit substrate 1, an encapsulation layer 3 disposed on the silicon-based CMOS driving circuit substrate 1 and covering the OLED structure 2, a first OC layer 4 disposed on the encapsulation layer 3, a color adhesive layer 5 disposed on the first OC layer 4, a second OC layer 6 disposed on the color adhesive layer 5, set up OCR layer 7 on second OC layer 6, set up glass apron 8 on OCR layer 7 and set up in isolating column 9 on encapsulation layer 3, isolating column 9 sets up a plurality ofly and all isolating columns 9 distribute around the outside of first OC layer 4, various gluey layer 5 and second OC layer 6, the height of isolating column 9 equals the sum of first OC layer 4, various gluey layer 5, second OC layer 6 and OCR layer 7 four thickness, the height of isolating column 9 also is the vertical distance between encapsulation layer 3 and the glass apron 8. The isolation column 9 is in contact with the glass cover plate 8, and the isolation column 9 supports the glass cover plate 8, so that the parallelism between the OLED layer and the glass cover plate 8 can be improved, and the light-emitting rate of an OLED device is ensured.
Specifically, as shown in fig. 1 and 2, the second OC layer 6 covers the color paste layer 5 and the first OC layer 4, and the OCR layer 7 covers the second OC layer 6, the spacers 9, and the encapsulation layer 3. The isolation columns 9 are vertically arranged on the packaging layer 3, the isolation columns 9 are located between the packaging layer 3 and the glass cover plate 8, all the isolation columns 9 simultaneously support the glass cover plate 8, parallelism of the glass cover plate 8 and the packaging layer 3 can be guaranteed to meet requirements, and product quality is improved.
As shown in fig. 1 and 2, it is preferable that the isolation pillars 9 have a hemispherical structure, an outer circumferential surface of the isolation pillars 9 is in contact with the glass cover plate 8, and an end portion of the isolation pillars 9 is connected to the encapsulation layer 3. The diameter of the isolation columns 9 is 5-10um, and the distance between two adjacent isolation columns 9 is 4-5 um.
As shown in fig. 1 and 2, in the present embodiment, ten spacers 9 are provided.
The invention also provides a preparation method of the silicon-based OLED micro-display, which comprises the following steps:
s1, manufacturing a CMOS circuit on the silicon substrate to form a silicon-based CMOS drive circuit substrate 1;
s2, preparing an OLED structure 2 on the silicon-based CMOS driving circuit substrate 1;
s3, preparing a packaging layer 3 on the whole surface;
s4, preparing an isolation column 9 on the packaging layer 3;
s5, sequentially preparing a first OC layer 4, a color glue layer 5 and a second OC layer 6 on the packaging layer 3;
s6, preparing an OCR layer 7 on the second OC layer 6, and finally attaching a glass cover plate 8 on the OCR layer 7.
In the step S4, the isolation pillars 9 with a diameter of 5-10um and a hemispherical shape are printed at an interval of 4-5um around the OLED display area by an inkjet printing method, so that the height of the isolation pillars 9 is equal to the sum of the thicknesses of the first OC layer 4, the color paste layer 5, the second OC layer 6 and the OCR layer 7, thereby fixing the parallelism of the glass cover plate 8 and the encapsulation layer 3.
The invention is described above with reference to the accompanying drawings. It is to be understood that the specific implementations of the invention are not limited in this respect. Any insubstantial improvements over the methods and technical solutions of the present invention; the above-mentioned conception and technical solutions of the present invention may be directly applied to other fields without any improvement, and all of them are within the scope of the present invention.
Claims (4)
1. Silica-based OLED microdisplay, including silica-based CMOS drive circuit base plate, set up the OLED structure on silica-based CMOS drive circuit base plate, set up on silica-based CMOS drive circuit base plate and cover the encapsulating layer of OLED structure, set up first OC layer on the encapsulating layer, set up the various glue film on first OC layer, set up the second OC layer on various glue film, set up the OCR layer on second OC layer and set up the glass apron on OCR layer, its characterized in that: the packaging structure further comprises a plurality of isolation columns arranged on the packaging layer, wherein all the isolation columns are distributed on the periphery of the outer sides of the first OC layer, the colored glue layer and the second OC layer, and the height of each isolation column is equal to the sum of the thicknesses of the first OC layer, the colored glue layer, the second OC layer and the OCR layer.
2. A silicon-based OLED micro-display according to claim 1, characterized in that: the second OC layer covers the color adhesive layer and the first OC layer.
3. A silicon-based OLED micro-display according to claim 1, characterized in that: the OCR layer covers the second OC layer, the isolation column and the packaging layer.
4. A method of fabricating a silicon-based OLED micro-display according to any of claims 1 to 3, comprising the steps of:
s1, manufacturing a CMOS circuit on the silicon substrate to form a silicon-based CMOS drive circuit substrate;
s2, preparing an OLED structure on the silicon-based CMOS driving circuit substrate;
s3, preparing a packaging layer on the whole surface;
s4, preparing an isolation column on the packaging layer;
s5, sequentially preparing a first OC layer, a color glue layer and a second OC layer on the packaging layer;
s6, preparing an OCR layer on the second OC layer, and finally attaching a glass cover plate on the OCR layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210254461.6A CN114628612A (en) | 2022-03-15 | 2022-03-15 | Silicon-based OLED micro-display and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210254461.6A CN114628612A (en) | 2022-03-15 | 2022-03-15 | Silicon-based OLED micro-display and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN114628612A true CN114628612A (en) | 2022-06-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210254461.6A Pending CN114628612A (en) | 2022-03-15 | 2022-03-15 | Silicon-based OLED micro-display and preparation method thereof |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110207257A1 (en) * | 2010-02-25 | 2011-08-25 | Fujifilm Corporation | Manufacturing method for a solid-state image pickup device |
| TW201320202A (en) * | 2011-11-02 | 2013-05-16 | Tpk Touch Solutions Xiamen Inc | Laminating structure, electronic device having the laminating structure and laminating method thereof |
| CN108172604A (en) * | 2018-01-03 | 2018-06-15 | 京东方科技集团股份有限公司 | A kind of OLED encapsulating structures, packaging method, display device |
| CN211605158U (en) * | 2020-04-15 | 2020-09-29 | 江苏集萃有机光电技术研究所有限公司 | OLED (organic light emitting diode) micro display panel and display device |
| CN112420963A (en) * | 2020-12-04 | 2021-02-26 | 深圳市芯视佳半导体科技有限公司 | Silicon-based OLED micro-display with improved contrast and preparation method thereof |
| CN113594397A (en) * | 2021-08-05 | 2021-11-02 | 安徽熙泰智能科技有限公司 | Micro OLED display structure and preparation method thereof |
| CN215731725U (en) * | 2021-09-10 | 2022-02-01 | 安徽熙泰智能科技有限公司 | Display structure for improving performance difference between different organic layers in Micro OLED |
| CN215815883U (en) * | 2021-09-24 | 2022-02-11 | 安徽熙泰智能科技有限公司 | OLED micro-display structure |
| CN215815882U (en) * | 2021-09-10 | 2022-02-11 | 安徽熙泰智能科技有限公司 | Structure for improving light-emitting parallelism of Micro OLED (organic light emitting diode) |
-
2022
- 2022-03-15 CN CN202210254461.6A patent/CN114628612A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110207257A1 (en) * | 2010-02-25 | 2011-08-25 | Fujifilm Corporation | Manufacturing method for a solid-state image pickup device |
| TW201320202A (en) * | 2011-11-02 | 2013-05-16 | Tpk Touch Solutions Xiamen Inc | Laminating structure, electronic device having the laminating structure and laminating method thereof |
| CN108172604A (en) * | 2018-01-03 | 2018-06-15 | 京东方科技集团股份有限公司 | A kind of OLED encapsulating structures, packaging method, display device |
| CN211605158U (en) * | 2020-04-15 | 2020-09-29 | 江苏集萃有机光电技术研究所有限公司 | OLED (organic light emitting diode) micro display panel and display device |
| CN112420963A (en) * | 2020-12-04 | 2021-02-26 | 深圳市芯视佳半导体科技有限公司 | Silicon-based OLED micro-display with improved contrast and preparation method thereof |
| CN113594397A (en) * | 2021-08-05 | 2021-11-02 | 安徽熙泰智能科技有限公司 | Micro OLED display structure and preparation method thereof |
| CN215731725U (en) * | 2021-09-10 | 2022-02-01 | 安徽熙泰智能科技有限公司 | Display structure for improving performance difference between different organic layers in Micro OLED |
| CN215815882U (en) * | 2021-09-10 | 2022-02-11 | 安徽熙泰智能科技有限公司 | Structure for improving light-emitting parallelism of Micro OLED (organic light emitting diode) |
| CN215815883U (en) * | 2021-09-24 | 2022-02-11 | 安徽熙泰智能科技有限公司 | OLED micro-display structure |
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