CN114628548B - Photoelectric detector with double ferroelectric layer composite film and preparation method thereof - Google Patents
Photoelectric detector with double ferroelectric layer composite film and preparation method thereof Download PDFInfo
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- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 20
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- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 claims description 10
- FYDKNKUEBJQCCN-UHFFFAOYSA-N lanthanum(3+);trinitrate Chemical compound [La+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O FYDKNKUEBJQCCN-UHFFFAOYSA-N 0.000 claims description 10
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- 229940071125 manganese acetate Drugs 0.000 claims description 6
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 claims description 4
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Abstract
The invention provides a preparation method of a photoelectric detector with a double ferroelectric layer composite film, which comprises the following steps: the precursor solutions for the lanthanum nickelate bottom electrode, BFMO and BLFO were prepared in stoichiometric proportions. And then preparing a lanthanum nickelate bottom electrode, a BLFO ferroelectric layer and a BFMO ferroelectric layer on the cleaned silicon substrate respectively in sequence through spin coating and heat treatment, and sputtering a gold electrode on the top layer to form a vertical electrode structure and a photoelectric detector. The invention also provides a photoelectric detector. The invention can realize higher photoelectric detection performance.
Description
Technical Field
The invention belongs to the field of electronic functional materials and devices, and particularly relates to a photoelectric detector with a double ferroelectric layer composite film and a preparation method thereof.
Background
Along with the rapid development of society and economy, the energy problem is attracting more and more attention, and the problems of environmental pollution, resource shortage and the like can be solved by fully utilizing solar energy, so that the research on photoelectric materials is also becoming a research focus. The ferroelectric material has the advantages of narrower band gap, low preparation cost, rapid carrier separation, high stability and the like, so that the ferroelectric material has wide application prospect in the photoelectric field. In addition, the characteristics of stable photocurrent, photovoltage exceeding the bandgap, and photovoltaic output with inversion of polarization direction have led more researchers to pay attention to the ferroelectric materials.
The separation of photogenerated electrons and holes in the ferroelectric material is driven by ferroelectric polarization, and the generated photovoltage is not limited by the forbidden bandwidth of the material. To obtain excellent photodetection performance, self-powered photodetection devices based on photo-ferroelectric materials are first required to have a large photocurrent density, and therefore the intrinsic properties of the material, such as bandgap and ferroelectric polarization, can be tuned by elemental doping. However, the photocurrent output of the single-layer ferroelectric thin film is always small, making it difficult to apply to self-powered photodetecting devices; in contrast, the multi-ferroelectric layer composite ferroelectric film can combine the dominant performance parameters of the single ferroelectric layer film, and meanwhile, the interface effect can also effectively act on the transmission of carriers, so that the photocurrent density of the multi-ferroelectric layer composite ferroelectric film is obviously improved. Currently, multilayer composite films are a hotspot of research, but this approach presents a costly, complex multi-step manufacturing process.
Disclosure of Invention
The present invention provides a photodetector with a double ferroelectric layer composite film and a preparation method thereof, which are used for at least solving one of the above technical problems.
The invention adopts the technical scheme that:
an embodiment of the present invention provides a method for a photodetector with a dual ferroelectric layer, comprising the steps of:
s1, weighing bismuth nitrate, ferric nitrate and lanthanum nitrate according to stoichiometric ratio, dissolving in an ethylene glycol monomethyl ether solvent, adding acetic acid to adjust the pH value of the solution, and uniformly stirring at 60-80 ℃ to prepare a BLFO precursor solution;
s2, weighing bismuth nitrate, ferric nitrate and manganese acetate according to stoichiometric ratio, dissolving in a glycol methyl ether solvent, adding acetic acid to adjust the pH value of the solution, and uniformly stirring at 60-80 ℃ to prepare a BFMO precursor solution;
s3, spin-coating the prepared BLFO precursor solution on a lanthanum nickelate bottom electrode to form a BLFO wet film on the lanthanum nickelate bottom electrode, so as to obtain a first matrix; the lanthanum nickelate bottom electrode comprises a silicon substrate and a lanthanum nickelate film arranged on the silicon substrate;
s4, carrying out heat treatment on the prepared first matrix, and annealing at 500-600 ℃ to obtain a lower ferroelectric layer BLFO film;
s5, spin-coating the prepared BFMO precursor solution on the lower ferroelectric layer BLFO film to form a BFMO wet film on the lower ferroelectric layer BLFO film, so as to obtain a second substrate;
s6, performing heat treatment on the prepared second substrate, and annealing at 500-600 ℃ to form an upper ferroelectric layer BFMO film on the lower ferroelectric layer BLFO film;
and S7, performing metal spraying treatment on the BFMO film of the upper ferroelectric layer to form a top electrode, thereby obtaining the photoelectric detector with the double ferroelectric layer composite film.
The invention also provides a photoelectric detector which is manufactured by the method.
The beneficial effects of the invention at least comprise: for the same ferroelectric layer material BiFeO 3 The photoelectric detector with the double ferroelectric layers is obtained by stacking the doped BFO with different elements, and has good light absorption capacity and higher ferroelectric polarization, so that the photoelectric detector has a prospect of obtaining excellent photoelectric performance; and a built-in electric field is formed at the interface of the BLFO film of the lower ferroelectric layer and the BFMO film of the upper ferroelectric layer, so that the built-in electric field at the interface is reinforced after the electric field is externally applied, the driving force for separating photo-generated carriers is enhanced, high photocurrent density is obtained, and the photodetection performance of the material is greatly improved; compared with the traditional double-layer film prepared by superposing two distinct materials, the preparation method is simple, has low cost and is suitable for efficiently preparing the self-powered photoelectric detector with excellent photoelectric detection performance.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic flow chart of a method for fabricating a photodetector with a dual ferroelectric layer composite film according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a photodetector according to an embodiment of the present invention;
FIG. 3 is a graph showing UV-visible absorption contrast;
FIG. 4 is a comparative chart of hysteresis loops;
fig. 5 is a graph of current density versus voltage.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
It is noted that unless otherwise indicated, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs.
The experimental methods in the following examples are conventional methods unless otherwise specified. The test materials used in the examples described below, unless otherwise specified, were purchased from conventional biochemical reagent stores. The quantitative tests in the following examples were all set up with three replicates, and the data are the mean or mean ± standard deviation of the three replicates.
Fig. 1 is a schematic flow chart of a method for manufacturing a photoelectric detector with a double ferroelectric layer composite film according to an embodiment of the present invention. As shown in fig. 1, the preparation method of the photodetector with the double ferroelectric layer composite film provided by the embodiment of the invention can comprise the following steps:
s1, weighing bismuth nitrate, ferric nitrate and lanthanum nitrate according to stoichiometric ratio, dissolving in an ethylene glycol monomethyl ether solvent, adding acetic acid to adjust the pH value of the solution, and uniformly stirring at 60-80 ℃ to prepare a BLFO precursor solution.
S2, weighing bismuth nitrate, ferric nitrate and manganese acetate according to stoichiometric ratio, dissolving in a glycol methyl ether solvent, adding acetic acid to adjust the pH value of the solution, and uniformly stirring at 60-80 ℃ to prepare the BFMO precursor solution.
In S1 and S2, stirring is preferably carried out uniformly at 60 ℃, and the volume ratio of acetic acid to ethylene glycol methyl ether can be 1:3, the concentration of the obtained precursor solution can be 0.1-0.3mol/L. In S1, the ratio of the amounts of the substances of bismuth nitrate and lanthanum nitrate is 9:1. in S2, the ratio of the amounts of the substances of ferric nitrate and manganese acetate may be 19:1.
s3, spin-coating the prepared BLFO precursor solution on a lanthanum nickelate bottom electrode to form a BLFO wet film on the lanthanum nickelate bottom electrode, so as to obtain a first matrix; the lanthanum nickelate bottom electrode comprises a silicon substrate and a lanthanum nickelate film prepared on the silicon substrate.
In S3, the rotating speed during spin coating is 2000-6000 rpm, and the time is 20-40 seconds.
Those skilled in the art will appreciate that the BLFO precursor solution is spin-coated on the upper surface of the lanthanum nickelate bottom electrode. The first substrate includes a lanthanum nickelate bottom electrode and a BLFO wet film spin-coated thereon.
In the embodiment of the invention, the lanthanum nickelate bottom electrode can be prepared by the following method:
s101, weighing lanthanum nitrate and nickel acetate according to a stoichiometric ratio, dissolving the lanthanum nitrate and the nickel acetate in an ethylene glycol monomethyl ether solvent, and uniformly stirring the mixture at 60-80 ℃ and preferably 60 ℃ to obtain a lanthanum nickelate precursor solution.
In one illustrative embodiment, the lanthanum nickelate precursor solution concentration may be 0.1-0.3mol/L.
S102, spin-coating the obtained lanthanum nickelate precursor solution on a silicon substrate to obtain a lanthanum nickelate wet film.
In the embodiment of the invention, the silicon substrate is obtained by processing in the following manner: and cleaning the silicon substrate by deionized water, acetone and absolute ethyl alcohol in sequence, and drying in a rapid annealing furnace after the silicon substrate is cleaned.
The rotating speed of the spin coating is 2000-6000 rpm and the time is 20-40 seconds.
And S103, performing heat treatment on the obtained lanthanum nickelate wet film to obtain a lanthanum nickelate dry film.
The heat treatment in S103 includes three stages: the first stage is heat treatment at 140-160deg.C for 1-5min; the second stage is heat treatment at 400-420 deg.C for 3-7min; the third stage is heat treatment at 650-750deg.C for 8-12min.
S104, annealing the lanthanum nickelate dry film at 650-750 ℃ to obtain the lanthanum nickelate bottom electrode. The annealing time can be 20-40min.
S4, carrying out heat treatment on the prepared first matrix, and annealing at 500-600 ℃ to obtain the BLFO film with the lower ferroelectric layer.
In S4, the heat treatment may include two stages: the first stage is heat treatment at 140-160deg.C for 1-5min; the second stage is heat treatment at 200-300 deg.C for 3-7min. The annealing time can be 20-40min.
And S5, spin-coating the prepared BFMO precursor solution on the lower ferroelectric layer BLFO film to form a BFMO wet film on the lower ferroelectric layer BLFO film, so as to obtain a second substrate.
Those skilled in the art will recognize that the BFMO precursor solution is spin-coated on the upper surface of the lower ferroelectric layer BLFO film. The second substrate includes a first substrate and a BFMO wet film spin-coated thereon.
In S5, the spin-coating may be performed at a rotational speed of 2000-6000 rpm for 20-40 seconds.
And S6, performing heat treatment on the prepared second substrate, and annealing at 500-600 ℃ to form an upper ferroelectric layer BFMO film on the lower ferroelectric layer BLFO film.
In S6, the heat treatment may include two stages: the first stage is heat treatment at 140-160deg.C for 1-5min; the second stage is heat treatment at 200-300 deg.C for 3-7min. The annealing time can be 20-40min.
And S7, performing metal spraying treatment on the BFMO film of the upper ferroelectric layer to form a top electrode, thereby obtaining the photoelectric detector with the double ferroelectric layer composite film.
In an embodiment of the present invention, the dual ferroelectric layer composite film includes a lower ferroelectric layer BLFO film and an upper ferroelectric layer BFMO film.
In S7, the upper ferroelectric layer BFMO film may be subjected to a metal spraying treatment using a dc ion sputtering apparatus, and then placed under a heating plate at 290 ℃ for heating for about 30min, so as to form a gold top electrode on the upper ferroelectric layer BFMO film.
Further, in the embodiment of the invention, the thickness of the lower ferroelectric layer BLFO film is 90nm-110nm; the thickness of the BFMO film of the upper ferroelectric layer is 130nm-150nm.
Further, in an embodiment of the present invention,the chemical composition of the lower ferroelectric layer BLFO film is BiFe 0.95 Mn 0.05 O 3 。
Further, in an embodiment of the present invention, the chemical composition of the upper ferroelectric layer BFMO thin film is Bi 0.9 La 0.1 FeO 3 。
Another embodiment of the present invention provides a photodetector manufactured by the method described above. As shown in fig. 2, the photodetector provided may include a lanthanum nickelate bottom electrode and BFMO/BLFO dual ferroelectric layer and a gold top electrode.
Further, the photodetector was at 100mW/cm 2 Under illumination intensity, the short-circuit current density is 6.2mA/cm 2 ～6.8mA/cm 2 The response rate is 55 mA/W-65 mA/W, and the detection rate is 5.5X10 11 Jones～6.5×10 11 Jones。
(comparative experiment)
The embodiment of the invention provides two groups of comparison experiments, namely, photodetectors with single-layer BLFO and BFMO ferroelectric films, which are prepared under the same process conditions and have the same thickness.
Control group a: method for preparing photodetector with single-layer BLFO ferroelectric film
In this embodiment, the method for fabricating a photodetector with a single layer BLFO ferroelectric film comprises fabricating a film on a silicon substrate, including fabrication of a lanthanum nickelate bottom electrode and fabrication of a BLFO ferroelectric film, comprising the steps of:
(1) Lanthanum nitrate and nickel acetate are weighed according to stoichiometric ratio and dissolved in ethylene glycol monomethyl ether solvent, and are stirred uniformly at 60 ℃ to obtain lanthanum nickelate precursor solution.
(2) Bismuth nitrate, ferric nitrate and lanthanum nitrate are weighed according to stoichiometric ratio and dissolved in ethylene glycol monomethyl ether solvent, acetic acid is added to adjust the pH value of the solution, and the solution is stirred uniformly at 60 ℃ to prepare BLFO precursor solution.
(4) And cleaning the silicon substrate by deionized water, acetone and absolute ethyl alcohol in sequence, and drying in a rapid annealing furnace after the silicon substrate is cleaned.
(5) Spin-coating the lanthanum nickelate precursor solution obtained in the step (1) on a silicon substrate to obtain a lanthanum nickelate wet film.
(6) And (3) carrying out heat treatment on the lanthanum nickelate wet film obtained in the step (5) to obtain a lanthanum nickelate dry film.
(7) Annealing the lanthanum nickelate dry film at 650-750 ℃ to obtain the lanthanum nickelate bottom electrode.
(8) Spin-coating the BLFO precursor solution prepared in the step (2) on the lanthanum nickelate bottom electrode prepared in the step (7) to form a BLFO wet film on the lanthanum nickelate bottom electrode, thereby obtaining a first substrate.
(9) Performing heat treatment on the first matrix obtained in the step (8), and annealing at 500-600 ℃ to obtain a BLFO ferroelectric film;
(10) And performing metal spraying treatment on the BLFO ferroelectric film to form a top electrode, thereby obtaining the photodetector with the single-layer BLFO ferroelectric film.
Control group b: preparation method of photodetector with BFMO ferroelectric film
In this embodiment, the method for preparing the photodetector with the single-layer BFMO ferroelectric film comprises the steps of preparing a film on a silicon substrate, including the preparation of a lanthanum nickelate bottom electrode and the preparation of the BFMO ferroelectric film, specifically comprising the following steps:
step one, preparing the lanthanum nickelate bottom electrode according to the preparation process of the lanthanum nickelate bottom electrode in the comparison a.
And weighing bismuth nitrate, ferric nitrate and manganese acetate according to stoichiometric ratio, dissolving in a glycol methyl ether solvent, adding acetic acid to adjust the pH value of the solution, and uniformly stirring at 60 ℃ to prepare the BFMO precursor solution.
And thirdly, spin-coating the BFMO precursor solution prepared in the first step on the prepared lanthanum nickelate bottom electrode to form a BFMO wet film on the lanthanum nickelate bottom electrode, so as to obtain a second matrix.
And step four, carrying out heat treatment on the second matrix obtained in the step three, and annealing at 500-600 ℃ to obtain the BFMO ferroelectric film.
And fifthly, performing metal spraying treatment on the BFMO ferroelectric film to form a top electrode, thereby obtaining the photodetector with the single-layer BFMO ferroelectric film.
Example c: preparation method of photodetector with double ferroelectric layer composite film
In this embodiment, the method for preparing the photodetector with the double ferroelectric layer composite film comprises the steps of preparing a film on a silicon substrate, including the preparation of a lanthanum nickelate bottom electrode and the preparation of the double ferroelectric layer composite film, and specifically comprises the following steps:
s200, preparing a lanthanum nickelate bottom electrode according to the preparation process of the lanthanum nickelate bottom electrode in the comparison a;
s210, spin-coating the BLFO precursor solution prepared in the control group a on the prepared lanthanum nickelate bottom electrode, and performing heat treatment and annealing to form a lower ferroelectric layer BLFO film on the lanthanum nickelate bottom electrode;
s220, spin-coating the BFMO precursor solution prepared in the control group b on the lower ferroelectric layer BLFO film prepared in the step S210, and performing heat treatment and annealing to form an upper ferroelectric layer BFMO film on the lower ferroelectric layer BLFO film;
and S230, performing metal spraying treatment on the BFMO film of the upper ferroelectric layer to form a top electrode, thereby obtaining the photoelectric detector with the double ferroelectric layer composite film.
Specific parameters in the above comparative experiments can be referred to the previous examples.
The performances of the photodetectors manufactured by the three manufacturing methods are analyzed:
referring to fig. 3, which is an ultraviolet-visible light absorption diagram of three photodetectors of the same thickness manufactured according to the processes of the control groups a, b and example c, the prepared photodetectors having the dual ferroelectric layers have absorption wavelengths between those of the photodetectors manufactured by the control groups a and b, and have good light absorption capacities between wavelengths 300 and 550nm, which indicates that the BFMO/BLFO composite film has good light absorption capacities and is favorable for absorbing more visible light.
Referring to fig. 4, a graph of polarization values versus voltage for three photodetectors at the same voltage is prepared according to the processes of control groups a, b and example c; first, it can be seen from the figure that all photodetectors have a distinct hysteresis loop indicating their ferroelectricity; secondly, it can be seen from the figure that the photo detector of the control group a has a higher polarization value, while the photo detector of the control group b has a lower polarization value, and by combining with reference to fig. 3, the photo detector can analyze that the BLFO has weak light absorption capability and strong ferroelectricity, and the BFMO has strong light absorption capability and poor ferroelectricity; in contrast, the BFMO/BLFO composite film can combine and neutralize the capacity between the BFMO and the BLFO, and has better ferroelectricity and stronger light absorption capacity; the good ferroelectricity and strong light absorption capability in the double ferroelectric layer composite film enable the double ferroelectric layer composite film to have excellent photoelectric performance.
Referring to fig. 5, current density and voltage graphs for three photodetectors were made according to the processes of control groups a, b and example c; respectively tested at 100mW/cm 2 Volt-ampere characteristic curves of three films under illumination intensity, wherein the short-circuit current density of the BFMO film is about 0.72mA/cm 2 ～0.78mA/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the BLFO short-circuit current density of 0.1mA/cm 2 ～0.16mA/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the The short-circuit current density of the BFMO/BLFO composite film is 6.2-6.8 mA/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the Because of different doping elements, the different layers in the composite film have different optical band gaps, energy band structures and ferroelectric polarization, so that a built-in electric field is formed at the interface between the different layers forming the composite film, the built-in electric field is enhanced under the action of an external electric field, the separation rate of photo-generated carriers is enhanced, and the heterojunction realizes high photocurrent density. Thus, at 100mW/cm 2 Under the illumination intensity of (2), the response rate of the composite film is 55 mA/W-65 mA/W, and the detection rate is 5.5X10 11 Jones～6.5×10 11 Jones。
While certain specific embodiments of the invention have been described in detail by way of example, it will be appreciated by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the invention. Those skilled in the art will also appreciate that many modifications may be made to the embodiments without departing from the scope and spirit of the invention. The scope of the present disclosure is defined by the appended claims.
Claims (10)
1. The preparation method of the photoelectric detector with the double ferroelectric layer composite film is characterized by comprising the following steps of:
s1, weighing bismuth nitrate, ferric nitrate and lanthanum nitrate according to stoichiometric ratio, dissolving in an ethylene glycol monomethyl ether solvent, adding acetic acid to adjust the pH value of the solution, and uniformly stirring at 60-80 ℃ to prepare a BLFO precursor solution;
s2, weighing bismuth nitrate, ferric nitrate and manganese acetate according to stoichiometric ratio, dissolving in a glycol methyl ether solvent, adding acetic acid to adjust the pH value of the solution, and uniformly stirring at 60-80 ℃ to prepare a BFMO precursor solution;
s3, spin-coating the prepared BLFO precursor solution on a lanthanum nickelate bottom electrode to form a BLFO wet film on the lanthanum nickelate bottom electrode, so as to obtain a first matrix; the lanthanum nickelate bottom electrode comprises a silicon substrate and a lanthanum nickelate film prepared on the silicon substrate;
s4, carrying out heat treatment on the prepared first matrix, and annealing at 500-600 ℃ to obtain a lower ferroelectric layer BLFO film;
s5, spin-coating the prepared BFMO precursor solution on the lower ferroelectric layer BLFO film to form a BFMO wet film on the lower ferroelectric layer BLFO film, so as to obtain a second substrate;
s6, performing heat treatment on the prepared second substrate, and annealing at 500-600 ℃ to form an upper ferroelectric layer BFMO film on the lower ferroelectric layer BLFO film;
and S7, performing metal spraying treatment on the BFMO film of the upper ferroelectric layer to form a top electrode, thereby obtaining the photoelectric detector with the double ferroelectric layer composite film.
2. The method of claim 1, wherein the lanthanum nickelate bottom electrode is prepared by the method of:
s101, weighing lanthanum nitrate and nickel acetate according to a stoichiometric ratio, dissolving in an ethylene glycol monomethyl ether solvent, and uniformly stirring at 60-80 ℃ to obtain a lanthanum nickelate precursor solution;
s102, spin-coating the obtained lanthanum nickelate precursor solution on a silicon substrate to obtain a lanthanum nickelate wet film;
s103, performing heat treatment on the obtained lanthanum nickelate wet film to obtain a lanthanum nickelate dry film;
s104, annealing the lanthanum nickelate dry film at 650-750 ℃ to obtain the lanthanum nickelate bottom electrode.
3. The method according to claim 1, wherein in steps S1 and S2, the volume ratio of acetic acid to ethylene glycol methyl ether is 1:3.
4. the method according to claim 1, wherein in S1 the ratio of the amounts of the substances bismuth nitrate and lanthanum nitrate is 9:1.
5. the method according to claim 1, wherein in S2 the ratio of the amounts of substances of ferric nitrate and manganese acetate is 19:1.
6. the method of claim 1, wherein the lower ferroelectric layer BLFO film has a thickness of 90nm to 110nm; the thickness of the BFMO film of the upper ferroelectric layer is 130nm-150nm.
7. The method of claim 1 wherein the lower ferroelectric layer BLFO film has a chemical composition of BiFe 0.95 Mn 0.05 O 3 。
8. The method according to claim 1, wherein the upper ferroelectric layer BFMO film has a chemical composition of Bi 0.9 La 0.1 FeO 3 。
9. A photodetector produced by the method of any one of claims 1 to 8.
10. The photodetector of claim 9, wherein said photodetector has a short circuit current density of 6.2mA/cm at an illumination intensity of 100mW/cm2 2 ～6.8mA/cm 2 The response rate is 55 mA/W-65 mA/W, and the detection rate is 5.5X10 11 Jones～6.5×10 11 Jones。
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