CN114626205A - Simulation method and simulation device for radiation transient response of area array photoelectric image sensor - Google Patents
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Abstract
The invention provides a simulation method and a simulation device for radiation transient response of an area array photoelectric image sensor, which are used for simulating radiation transient response of the photoelectric image sensor in an ray or particle radiation field environment and solving the problems that the evaluation test cost of the radiation transient response of the area array photoelectric image sensor in a complex radiation environment is high, the obtained effective data is less and the obtained data is difficult to comprehensively reflect the transient response in a real environment.
Description
Technical Field
The invention belongs to the field of radiation effect simulation, and particularly relates to a simulation method and a simulation device for radiation transient response of an area array photoelectric image sensor.
Background
With the wide application of imaging monitoring systems based on photoelectric image sensors in the fields of space remote sensing imaging, satellite positioning, nuclear power station environmental monitoring, nuclear fuel overhaul and the like, the transient response induced by radiation particles or rays is of great interest. The transient response signal induced by radiation can be used as a signal to detect radiation particles and can also be used as noise to interfere the imaging quality. Therefore, it is desirable to evaluate the transient response of the imaging system in connection with its practical use.
At present, the research on radiation transient response of a photoelectric image sensor mainly aims at carrying out transient response tests, but the transient response tests have the following problems: (1) because the radiation particles or rays are irradiated for a long time, accumulated irradiation damage can be caused to the photoelectric image sensor, so that a transient response test result is influenced, the effective data volume obtained through a single test is small, and the requirement on a large number of data sets in the transient response image processing process based on artificial intelligence is difficult to meet; (2) the real space radiation environment and the nuclear radiation environment are relatively complex (including the direction, energy, variety and the like of particles or rays), the laboratory environment is difficult to reproduce, and typical data obtained through experiments are difficult to comprehensively reflect the transient response in the real environment; (3) the irradiation test is costly and takes a long time.
Disclosure of Invention
The invention provides a simulation method and a simulation device for radiation transient response of an area array photoelectric image sensor, which are used for simulating radiation transient response of the photoelectric image sensor in an ray or particle radiation field environment, solving the problems that the evaluation test cost of the radiation transient response of the area array photoelectric image sensor in a complex radiation environment is high, the obtained effective data is few, and the obtained data is difficult to comprehensively reflect the transient response in a real environment, and simultaneously providing a transient response training image data set for constructing a transient response image processing process based on artificial intelligence.
In order to achieve the purpose, the invention adopts the following technical scheme:
a simulation method of radiation transient response of an area array photoelectric image sensor comprises the following steps:
the method comprises the following steps that firstly, a three-dimensional array geometric model of the area array photoelectric image sensor is constructed, a sensitive area with transient response is set as an energy loss collection area, the energy loss collection area is a sensitive unit, and coordinate values are set for each sensitive unit, so that each sensitive unit has a unique position number;
selecting a simulated physical process and setting simulated physical quantity;
the specific process of setting the simulated physical quantity comprises the following steps: firstly, respectively counting the atomic number, energy, generation position and direction of secondary particles generated in materials in different areas of the area array photoelectric image sensor; secondly, giving the atomic number, energy, generation position and direction of secondary particles generated in the whole area array photoelectric image sensor;
setting relevant parameters of radiation particles or rays;
the relevant parameters of the radiation particles or rays comprise the shapes of the radiation particles or rays, the types of the radiation particles or rays, the directions of the radiation particles or rays, and the energies of the radiation particles or rays;
determining the number of rays according to the dose rate and the integration time of radiation, or determining the number of incident particles according to the fluence rate and the integration time of the radiation;
4.1) calculating the total radiation dose according to the radiation dose rate and the integration time, or calculating the radiation accumulated fluence according to the radiation fluence rate and the integration time; wherein, the total dose is the product of dose rate and integration time, and the accumulated fluence is the product of fluence rate and integration time;
4.2) giving out the total particle number according to the corresponding relation between the total dose and the particle number and the particle beam spot area, or giving out the total particle number according to the corresponding relation between the accumulated fluence and the particle number and the particle beam spot area; wherein the total particle number is the product of the particle number and the area of the particle beam spot;
fifthly, carrying out simulation calculation, and acquiring two-dimensional transient response output images according to coordinate values of the sensitive units, ionization energy deposition and efficiency information collected at different positions;
sixthly, according to the coordinate information of the transient response of the two-dimensional transient response output image, determining the position number of the sensitive unit, and according to the position number, determining the particle type passing through the position, thereby obtaining the particle type generating the transient response; and obtaining the atomic number, the generation rate distribution graph and the energy spectrum distribution graph of the secondary particles generated by different material areas according to the atomic number, the energy and the generation position of the secondary particles.
Further, in the first step, the determination formula of the position number Num of the sensing unit is as follows:
Num＝100000000z+10000y+x (1)
wherein x is the abscissa of the pixel unit, y is the ordinate of the pixel unit, and z is the coordinate along the top surface to the bottom surface of the photoelectric image sensor.
Further, in the first step, the constructing a three-dimensional array geometric model of the area array photoelectric image sensor specifically includes: determining the length, width and height of different areas of the area array photoelectric image sensor and the types of materials, determining the relative central position of each layer of material, and setting the size of a pixel unit and the number of pixel arrays.
Further, in step three, the shape of the radiation particle or ray includes a surface source, a point source, a sphere source, a rectangular parallelepiped source or a sphere source; the direction of the radiation particles or rays is set to a single direction or is defined by a function to follow a certain distribution; the radiation particle or ray energy is a single energy or a spectrum file imported through a txt or dat file.
Further, in the fifth step, acquiring a two-dimensional transient response output image according to the coordinate value and the ionization energy deposition of the sensitive unit and the collection efficiency information of different positions specifically includes the following steps:
5.1) determining the quantity of generated electric charge according to the ionization energy deposition of the sensitive unit;
5.2) determining effective collected total charges according to the charge quantity, the coordinate value and the collection efficiency of the sensitive unit, wherein the effective collected total charges are the sum of the effective collected charges under the conditions of the same x and y coordinates and different z;
and 5.3) converting the effectively collected charges into gray values in a two-dimensional image for output according to the coordinate values of the sensitive units, the effectively collected charges, and the charges and gray value conversion factors of the image sensor, namely acquiring a two-dimensional transient response output image.
Further, in step five, the coordinate values of x, y and z are obtained by the following conversions:
z＝[Num/108]
y＝[(Num-z×108)/104]
x＝Num-108×[Num/108]-104×[Num/104]
wherein [ ] is a rounded symbol.
Further, in the fifth step, when the simulation calculation is performed, the simulation calculation is performed on the plurality of groups of images in the same state by associating the random number for starting sampling with the system time.
Meanwhile, the invention also provides a simulation device for realizing the radiation transient response of the area array photoelectric image sensor, which comprises a geometric model building module, a physical process selection module, a radiation particle building module, an operation module and a data processing and displaying module; the geometric model construction module is used for constructing a photoelectric image sensor three-dimensional array geometric model for transient response simulation calculation and setting material information of a geometric body; the physical process selection module is connected with the geometric model construction module and is used for selecting a physical process, truncation energy and physical quantity required to be simulated and calculated in the simulation process; the radiation particle establishing module is connected with the geometric model establishing module and is used for setting the shape of the radiation particles or rays, the type of the radiation particles, the direction of the radiation particles or rays and the energy of the radiation particles or rays; the operation module is respectively connected with the physical process selection module and the radiation particle establishment module and is used for setting the number of incident particles or rays and the simulation times under the same state; and the data processing and displaying module is connected with the operation module and is used for processing and displaying the simulation calculation data.
Further, the geometric model building module supports direct building of regular geometric bodies in the model building process and direct import of the CAD geometric model.
Further, the output of the data processing and displaying module is a two-dimensional transient response output image, and the atomic number and generation rate distribution graph and the secondary particle energy spectrum distribution graph of the secondary particles are generated by different material areas.
Compared with the prior art, the invention has the following beneficial effects:
1. the simulation method and the simulation device can realize the simulation of the transient response of the photoelectric image sensor in various radiation environments, lay a foundation for the research of transient response mechanisms in different radiation environments, and provide a training image data set for the transient response image processing process based on artificial intelligence.
2. The simulation method and the simulation device provided by the invention give the distribution graph of the atomic number and the generation rate of the secondary particles generated in the material region and the distribution graph of the energy spectrum of the secondary particles through simulation calculation, and the related results have important significance for evaluating the radiation transient response of the photoelectric image sensor and analyzing the generation mechanism.
3. The simulation method and the simulation device of the invention provide the two-dimensional transient response output image of the photoelectric image sensor under various space radiation and nuclear radiation environments through simulation calculation, and can provide a large amount of training image data sets for the transient response image processing process based on artificial intelligence.
4. The simulation method and the simulation device have the advantages of low cost, short time consumption, large data volume and capability of providing the transient response output image of the photoelectric image sensor in a complex radiation environment, and simultaneously can avoid the influence caused by radiation damage of accumulated radiation particles or rays on the transient response result.
Drawings
FIG. 1 is a flow chart of a method for simulating radiation transient response of an area array photoelectric image sensor according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an apparatus for simulating a radiation transient response of an area array photoelectric image sensor according to an embodiment of the present invention;
FIG. 3a is a top view of a three-dimensional array geometric model of an area array photoelectric image sensor according to an embodiment of the present invention;
FIG. 3b is a side view of a geometric model of a three-dimensional array of an area array photoelectric image sensor according to an embodiment of the present invention;
FIG. 3c is a partially enlarged view of a pixel array of a three-dimensional array geometric model of an area array photoelectric image sensor according to an embodiment of the present invention;
FIG. 4 is an output image of a 200MeV neutron two-dimensional transient response in an embodiment of the present invention;
FIG. 5 is a graph illustrating the distribution of the atomic number and the generation rate of secondary particles generated in a silicon material by neutrons with different energies according to an embodiment of the present invention;
FIG. 6 is a spectrum diagram of a secondary particle of 200MeV neutrons in silicon material according to an embodiment of the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood by those skilled in the art that these embodiments are only for explaining the technical principle of the present invention and are not intended to limit the scope of the present invention.
The invention provides a simulation method and a simulation device for radiation transient response of an area array photoelectric image sensor, and aims to provide a method and a tool for simulation calculation of radiation transient response of the area array photoelectric image sensor in a complex radiation environment. The simulation method and the simulation device have important significance for the transient response typical feature analysis, the transient response evaluation and the transient response mechanism analysis of the photoelectric image sensor in the complex radiation environment.
The invention provides a method for simulating radiation transient response of an area array photoelectric image sensor, which comprises the following steps:
the method comprises the following steps that firstly, a three-dimensional array geometric model of the area array photoelectric image sensor is constructed, a sensitive area with transient response is set as an energy loss collection area, the energy loss collection area is a sensitive unit, and coordinate values are set for each sensitive unit;
the method for constructing the three-dimensional array geometric model of the area array photoelectric image sensor specifically comprises the following steps: determining the length, width, height and material types of different areas of the area array photoelectric image sensor, determining the relative central position of each layer of material, and setting the size of a pixel unit and the number of pixel arrays;
setting an energy loss collection area (namely a sensitive unit), setting a coordinate value for each sensitive unit, ensuring that each sensitive unit has a unique position number, wherein the determination formula of the position number Num of the sensitive unit is as follows:
Num＝100000000z+10000y+x
wherein x is the abscissa of the pixel unit, y is the ordinate of the pixel unit, and z is the coordinate from the upper surface to the lower surface of the photoelectric image sensor;
during subsequent data processing, the coordinate values of x, y, z are obtained by the following transformations:
z＝[Num/108]
y＝[(Num-z×108)/104]
x＝Num-108×[Num/108]-104×[Num/104]
wherein [ ] is a rounding symbol;
selecting a simulated physical process, and setting physical quantities to be simulated, such as secondary particle atomic number, energy, generation position and the like;
the choice of the physical process simulated is closely related to the particle species, such as: for gamma rays, the photoelectric effect, compton scattering and electron pair effect are added in the physical process under the general condition; for protons, ionization interaction processes, coulomb scattering, elastic nuclear collisions, inelastic nuclear collisions, etc. are generally added;
the specific setting process of the simulated physical quantity comprises the following steps: firstly, respectively counting the atomic number, energy, generation position and direction of secondary particles generated in materials in different areas of the area array photoelectric image sensor; secondly, giving the atomic number, energy, generation position and direction of secondary particles generated in the whole area array photoelectric image sensor;
setting relevant parameters of radiation particles or rays;
the relevant parameters of the radiation particles or rays comprise the shapes of the radiation particles or rays, the types of the radiation particles or rays, the directions of the radiation particles or rays, and the energies of the radiation particles or rays;
the shape of the radiation particle or ray includes a surface source, a point source, a sphere source, a cuboid source, or a spherical source;
the direction of the radiation particles or rays can be set to a single direction, or can be set to a direction following a certain distribution by being defined by a function;
the radiation particle or ray energy may be a single energy or a spectrum file imported through a txt or dat file.
Determining the number of rays according to the dose rate and the integration time of radiation, or determining the number of incident particles according to the fluence rate and the integration time of the radiation;
4.1) calculating the total dose (or fluence rate) according to the dose rate (or fluence rate) and the integration time of the radiation particle radiation, wherein the total dose (or accumulated fluence) is the product of the dose rate (or fluence rate) and the integration time; the integration time and the dose rate (or fluence rate) are determined according to a real scene needing to be simulated;
4.2) giving out the total number of particles according to the corresponding relation between the total radiation dose (or the accumulated fluence) and the number of particles and the area of the beam spots of the particles; the total particle number is the product of the particle number determined according to the corresponding relation and the area of the particle beam spot, and the area of the particle beam spot is generally the section size of the device;
the corresponding relation between the total dose (or the accumulated fluence) and the number of particles is calculated in advance through simulation to give the corresponding relation between the total dose and the number of particles of common rays (Co-60 gamma rays and 10keV X rays), and if the particles or rays are of other types, the corresponding relation between the total dose (or the total fluence) and the number of particles needs to be given through simulation calculation;
fifthly, carrying out simulation calculation, and acquiring a two-dimensional transient response output image according to the information such as the coordinates of the sensitive unit, the ionization energy deposition, the collection efficiency of different positions and the like;
when analog calculation is carried out, the analog calculation of a plurality of groups of images under the same state is realized by correlating the random number of sampling start with the system time;
the method for obtaining the two-dimensional transient response output image according to the information such as the coordinate of the sensitive unit, the ionization energy deposition, the collection efficiency of different positions and the like specifically comprises the following processes:
5.1) determining the generated charge quantity according to the ionization energy deposition of the sensitive unit;
5.2) determining effective collection total charges according to the charge quantity, the position coordinate and the collection efficiency of the sensitive unit, wherein the effective collection total charges are the sum of the effective collection charges under the conditions of the same x and y coordinates and different z;
5.3) converting the effectively collected charges into gray values in a two-dimensional image for output according to the position coordinates of the sensitive unit, the effectively collected charges and the charge and gray value conversion factors of the image sensor, so as to obtain a two-dimensional transient response output image;
step six, obtaining the type of the particles generating the transient response according to the particle information in the process of generating the transient response; obtaining atomic number, generation rate distribution diagram and secondary particle energy spectrum distribution diagram of the secondary particles generated in different material areas according to the atomic number, energy and generation positions of the secondary particles;
the specific process for obtaining the particle types generating the transient response is as follows: determining the position number of the sensitive unit according to the coordinate information of the transient response of the two-dimensional transient response output image, and determining the particle type passing through the position according to the position number so as to obtain the particle type generating the transient response;
when the type of particles corresponding to transient bright spots or bright lines generated in an image sensor needs to be judged, firstly, the number of times of generating transient corresponding energy deposition is found by outputting transient response image coordinate values, and if the number of times is one, the transient is transient response induced by single particles; secondly, finding out information such as particle names, TrackID, EventID, ParentID and the like, and determining the type of the particles generating the transient response by considering that the transient response is generated by the same particle or ray under the condition that the information is the same;
based on the method, the invention also provides a simulation device of the radiation transient response of the area array photoelectric image sensor, which comprises a geometric model building module, a physical process selection module, a radiation particle building module, an operation module and a data processing and displaying module.
The geometric model building module is used for building a three-dimensional area array geometric model of the photoelectric image sensor for transient response simulation calculation and setting material information of a geometric body; the geometric model building module supports direct building of regular geometric bodies such as cuboids, cubes, cylinders and spheres in the model building process, and CAD geometric models supporting formats such as STL and STEP are reserved for direct import; when defining the material, selecting common simple substance material from the periodic element table; for the common compound materials, selecting from a well-defined material library; and customizing the periodic element list and the materials which do not meet the requirements in the defined material library.
And the physical process selection module is connected with the geometric model construction module and is used for selecting the physical process, the truncation energy and the physical quantity required for simulation calculation in the simulation process.
The radiation particle establishing module is connected with the geometric model establishing module and is used for setting the type, the energy, the incident angle and the like of simulated particles or rays. The radiation particle source shapes that can be established include: surface source, point source, sphere source, cuboid source, sphere source; the direction can be set to be a single direction, or can be set to be a direction subject to certain distribution through function definition; the radiation particle energy can be a single energy or introduced into the spectrum by a correlation file.
The operation module is respectively connected with the physical process selection module and the radiation particle establishment module and is used for setting the number of incident particles and the simulation times under the same state. In the incident particle number setting process, a single incident particle number may be set, a plurality of incident particle numbers may be set, or a series of linearly increasing incident particle numbers may be set by giving maximum, minimum, and linear intervals.
The data processing and displaying module is connected with the operation module and used for processing and displaying the simulation calculation data, and specifically comprises a two-dimensional transient response output image (whether reverse color display can be selected), a distribution graph of atomic numbers and generation rates of secondary particles generated in different material areas, and a distribution graph of energy spectrums of the secondary particles.
The embodiment of the invention provides a method and a device for simulating radiation transient response of a CMOS image sensor. The pixel unit of the analog computation CMOS image sensor has a front-illuminated structure, and the size of the pixel unit is 11 mu m multiplied by 11 mu m. The simulation calculation work was carried out by Image sensor Transient Response simulator pstris (package for simulation of Image sensor) based on secondary development of Geant 4. The simulated particles are monoenergetic neutrons. Fig. 1 is a flowchart of a method for simulating a radiation transient response of an area array photoelectric image sensor according to an embodiment of the present invention, and fig. 2 is a specific block diagram of a transient response simulation apparatus PSTRIS according to an embodiment of the present invention, and the specific steps are as follows:
step one, as shown in fig. 3a, fig. 3b and fig. 3c, constructing a three-dimensional array geometric model of an area array photoelectric image sensor, setting an energy loss collection area, and setting a coordinate value for each sensitive unit according to the horizontal and vertical coordinates of a pixel unit, wherein if the pixel array coordinate is (x, y, z), the unit coordinate value is defined as 100000000z +10000y + x; subsequently, positioning the sensitive area through the pixel unit coordinate value;
selecting a simulated physical process, and setting simulated physical quantity, wherein the physical process selects a built-in physical process FTFP _ BERT _ HP in Monte Carlo software Geant 4;
setting incident particles as a surface source, setting the incident direction to be vertical to the surface of the CMOS image sensor, setting the type of the incident particles as neutrons and setting the energy as monoenergetic particles;
step four, the neutron fluence rate is 1.4 multiplied by 106n/cm2(s), integration time 2s, irradiation area 3.65 cm. times.3.65 cm, irradiation particle number 3.73X 107；
Fifthly, carrying out simulation calculation, and obtaining a two-dimensional transient response output image according to the information of the coordinates of the sensitive unit, the ionization energy deposition, the collection efficiency of different positions and the like, wherein the information is shown in fig. 4;
step six, according to the secondary particle information, counting to obtain any particle type generating transient response, for example, bright lines in fig. 4 are almost all caused by protons in the secondary particles; and obtaining the generation rate, the energy spectrum distribution curve and the angle distribution diagram of the secondary particles in different areas according to the atomic number, the energy and the generation position of the secondary particles. FIG. 5 is a diagram of the distribution of the atomic number and the generation rate of secondary particles generated by neutrons with different energies in a silicon material; the secondary proton energy spectrum distribution of 200MeV neutrons in silicon material is shown in fig. 6.
Claims (10)
1. A method for simulating radiation transient response of an area array photoelectric image sensor is characterized by comprising the following steps:
the method comprises the following steps that firstly, a three-dimensional array geometric model of the area array photoelectric image sensor is constructed, a sensitive area with transient response is set as an energy loss collection area, the energy loss collection area is a sensitive unit, and coordinate values are set for each sensitive unit, so that each sensitive unit has a unique position number;
selecting a simulated physical process and setting simulated physical quantity;
the specific process of setting the simulated physical quantity comprises the following steps: firstly, respectively counting the atomic number, energy, generation position and direction of secondary particles generated in materials in different areas of the area array photoelectric image sensor; secondly, giving the atomic number, energy, generation position and direction of secondary particles generated in the whole area array photoelectric image sensor;
setting relevant parameters of radiation particles or rays;
the relevant parameters of the radiation particles or rays comprise the shapes of the radiation particles or rays, the types of the radiation particles or rays, the directions of the radiation particles or rays, and the energies of the radiation particles or rays;
determining the number of rays according to the dose rate and the integration time of radiation, or determining the number of incident particles according to the fluence rate and the integration time of the radiation;
4.1) calculating the total radiation dose according to the radiation dose rate and the integration time, or calculating the radiation accumulated fluence according to the radiation fluence rate and the integration time; wherein, the total dose is the product of dose rate and integration time, and the accumulated fluence is the product of fluence rate and integration time;
4.2) giving out the total particle number according to the corresponding relation between the total dose and the particle number and the particle beam spot area, or giving out the total particle number according to the corresponding relation between the accumulated fluence and the particle number and the particle beam spot area; wherein the total particle number is the product of the particle number and the area of the particle beam spot;
fifthly, carrying out simulation calculation, and acquiring two-dimensional transient response output images according to coordinate values of the sensitive units, ionization energy deposition and efficiency information collected at different positions;
sixthly, according to the coordinate information of the transient response of the two-dimensional transient response output image, determining the position number of the sensitive unit, and according to the position number, determining the particle type passing through the position, thereby obtaining the particle type generating the transient response; and obtaining the atomic number, the generation rate distribution map and the secondary particle energy spectrum distribution map of the secondary particles generated by different material areas according to the atomic number, the energy and the generation position of the secondary particles.
2. The simulation method of radiation transient response of the area array photoelectric image sensor according to claim 1, wherein: in the first step, the determination formula of the position number Num of the sensitive unit is as follows:
Num＝100000000z+10000y+x (1)
wherein x is the abscissa of the pixel unit, y is the ordinate of the pixel unit, and z is the coordinate along the top surface to the bottom surface of the photoelectric image sensor.
3. The simulation method for radiation transient response of the area array photoelectric image sensor according to claim 1, wherein in the first step, the constructing a three-dimensional array geometric model of the area array photoelectric image sensor specifically comprises: determining the length, width, height and material types of different areas of the area array photoelectric image sensor, determining the relative central position of each layer of material, and setting the size of a pixel unit and the number of pixel arrays.
4. The simulation method of radiation transient response of the area array photoelectric image sensor according to claim 1, wherein: in the third step, the shape of the radiation particles or rays comprises a surface source, a point source, a sphere source, a cuboid source or a sphere source; the direction of the radiation particles or rays is set to a single direction or is defined by a function to follow a certain distribution; the radiation particle or ray energy is a single energy or a spectrum file imported through a txt or dat file.
5. The method for simulating radiation transient response of an area array photoelectric image sensor according to claim 2, wherein in the fifth step, obtaining a two-dimensional transient response output image according to the coordinate values of the sensitive unit, the ionization energy deposition and the collection efficiency information at different positions specifically comprises the following steps:
5.1) determining the quantity of generated electric charge according to the ionization energy deposition of the sensitive unit;
5.2) determining effective collection total charges according to the charge quantity, the coordinate value and the collection efficiency of the sensitive unit, wherein the effective collection total charges are the sum of the effective collection charges under the conditions of the same x and y coordinates and different z;
and 5.3) converting the effectively collected charges into gray values in a two-dimensional image for output according to the coordinate values of the sensitive units, the effectively collected charges, and the charges and gray value conversion factors of the image sensor, namely acquiring a two-dimensional transient response output image.
6. The simulation method of radiation transient response of the area array photoelectric image sensor according to claim 5, wherein: in the fifth step, coordinate values of x, y and z are obtained through the following conversion:
z＝[Num/108]
y＝[(Num-z×108)/104]
x＝Num-108×[Num/108]-104×[Num/104]
wherein [ ] is a rounded symbol.
7. The method for simulating radiation transient response of an area-array photoelectric image sensor according to claim 6, wherein: and step five, when analog calculation is carried out, the analog calculation of a plurality of groups of images under the same state is realized by associating the random number for starting sampling with the system time.
8. A simulation device for radiation transient response of an area array photoelectric image sensor is characterized in that: the system comprises a geometric model building module, a physical process selection module, a radiation particle building module, an operation module and a data processing and displaying module; the geometric model construction module is used for constructing a photoelectric image sensor three-dimensional array geometric model for transient response simulation calculation and setting material information of a geometric body; the physical process selection module is connected with the geometric model construction module and is used for selecting a physical process, truncation energy and physical quantity required to be simulated and calculated in the simulation process; the radiation particle establishing module is connected with the geometric model establishing module and is used for setting the shape of the radiation particles or rays, the type of the radiation particles, the direction of the radiation particles or rays and the energy of the radiation particles or rays; the operation module is respectively connected with the physical process selection module and the radiation particle establishment module and is used for setting the number of incident particles or rays and the simulation times under the same state; and the data processing and displaying module is connected with the operation module and is used for processing and displaying the simulation calculation data.
9. The apparatus for simulating radiation transient response of area array photoelectric image sensor according to claim 8, wherein: the geometric model building module supports direct building of regular geometric bodies in the model building process and supports direct import of the CAD geometric model.
10. The apparatus for simulating radiation transient response of area array photoelectric image sensor according to claim 9, wherein: the output of the data processing and displaying module is a two-dimensional transient response output image, and an atomic number and generation rate distribution diagram and a secondary particle energy spectrum distribution diagram of secondary particles generated by different material areas.
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