CN114625203A - High-voltage bias circuit of single photon avalanche diode - Google Patents

High-voltage bias circuit of single photon avalanche diode Download PDF

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CN114625203A
CN114625203A CN202111675370.1A CN202111675370A CN114625203A CN 114625203 A CN114625203 A CN 114625203A CN 202111675370 A CN202111675370 A CN 202111675370A CN 114625203 A CN114625203 A CN 114625203A
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CN114625203B (en
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王夏宇
李春林
刘马良
马瑞
朱樟明
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Xidian University
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Abstract

The invention discloses a high-voltage bias circuit of a single photon avalanche diode, which comprises: the device comprises a dynamic high voltage generating unit, an SPAD device, a front end circuit unit, an optical pulse counting unit and a counting rate comparison and judgment unit. The dynamic high-voltage generating unit is used for providing a dynamic bias voltage HV higher than a reverse breakdown voltage of the SPAD device and the SPAD device of the front-end circuit unit, the SPAD device in the SPAD device and the front-end circuit unit works in a Geiger mode and has single photon sensitivity, the feedback output of the counting rate comparison and judgment unit is received through the feedback input end Cont, the comparison result of the counting rate R of the optical pulse counting unit and the counting rate threshold is obtained, the dynamic high-voltage generating unit adjusts the size of the dynamic bias voltage HV according to the comparison result and outputs the dynamic bias voltage HV, the photon detection efficiency of the SPAD device is changed, and the optical pulse counting rate R is always in a proper range. The invention improves the tolerance of the laser radar receiver system to background light and improves the dynamic range of devices.

Description

High-voltage bias circuit of single-photon avalanche diode
Technical Field
The invention belongs to the technical field of laser radar optical signal receiver systems, and particularly relates to a high-voltage bias circuit of a single photon avalanche diode.
Background
The laser radar has the advantages of high resolution, strong active interference resistance, high detection reliability, no influence of light, large speed measurement range and the like, and can detect the three-dimensional image of the surrounding environment in real time, so that the unmanned control equipment has bright eyes. Single photon detection in lidar ranging is a technique for obtaining range information by counting received photons (the number of photons detected within a certain known measurement time) and works on the principle that: when laser emitted by a laser emitter irradiates on a detected target object, a laser echo is reflected by the target object, the laser echo is received by a single photon avalanche photodiode (SPAD) working in a Geiger mode and triggers avalanche breakdown to generate photocurrent, then a front-end circuit quenches, resets and compresses pulses of the SPAD to obtain a voltage pulse signal, and then a time-to-digital converter is used for obtaining the flight time information of the pulses. Therefore, to make the SPAD device work, a high voltage bias higher than the reverse breakdown voltage needs to be provided, and the magnitude of the high voltage bias often influences the photon detection efficiency of the SPAD device, so that the photon counting rate is changed.
In the traditional scheme, the high-voltage bias circuit can only generate a fixed voltage, the magnitude of the over-bias voltage is limited, and the dynamic range of the SPAD device is small. In practical application, due to the existence of background light, the accuracy of receiving the laser echo signals is influenced, some unnecessary photons are introduced to trigger the SPAD device to work, a current pulse signal is generated, the photon counting rate is easily saturated, and accurate photon number information of the laser echo cannot be obtained.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a high voltage bias circuit of a single photon avalanche diode. The technical problem to be solved by the invention is realized by the following technical scheme:
a high voltage bias circuit for a single photon avalanche diode, comprising: the device comprises a dynamic high-voltage generating unit, an SPAD device, a front-end circuit unit, an optical pulse counting unit and a counting rate comparison and judgment unit;
the clock input end CLK of the dynamic high-voltage generating unit is connected with the output end of an external clock signal generating unit, the feedback input end Cont of the dynamic high-voltage generating unit is connected with the output end of the counting rate comparison and judgment unit, and the bias voltage output end of the dynamic high-voltage generating unit is connected with the input ends of the SPAD device and the front-end circuit unit;
the output ends of the SPAD device and the front-end circuit unit are connected with the input end of the optical pulse counting unit; the SPAD device and the front-end circuit unit are used for receiving photons in laser reflection echoes from a target object and outputting a voltage pulse signal;
the optical pulse counting unit counts the voltage pulse signals and converts counting results into digital signals, and the digital signals are output from an OUT end of the optical pulse counting unit;
the dynamic high voltage generating unit is used for providing a dynamic bias voltage HV higher than a reverse breakdown voltage of the SPAD device and the SPAD device of the front-end circuit unit, enabling the SPAD device and the SPAD device in the front-end circuit unit to work in a Geiger mode, receiving a comparison result of a count rate R and a count rate threshold of the optical pulse counting unit through the feedback input end Cont, and adjusting the size of the dynamic bias voltage HV according to the comparison result to output.
In one embodiment of the present invention, the dynamic high voltage generation unit includes a four-phase clock control module, a charge pump boosting module, an operational amplifier module and a resistance voltage division tap module;
the clock input end of the four-phase clock control module is connected with the output end of a clock signal generation unit, four output ends of the four-phase clock control module are respectively connected with four input ends of the charge pump boosting module, and the four-phase clock control module is used for converting a clock signal CLK generated by the clock signal generation unit into four-phase clock output so as to control the boosting process of the charge pump boosting module;
a fifth input end of the charge pump boosting module is connected with an output end of the operational amplifier module, and the bias voltage output end of the charge pump boosting module is connected with input ends of the SPAD device and the front-end circuit unit and a first input end of the resistor voltage division tap module;
the non-inverting input end of the operational amplifier module is connected with a reference level VP, and the inverting input end VN of the operational amplifier module is connected with the third input end of the resistance voltage division tap module;
and the feedback input end Cont of the resistance voltage division tap module is connected with the output end of the counting rate comparison and judgment unit.
In one embodiment of the invention, the dynamic bias voltage HV is represented by:
HV＝(N+1)×VOUT (1)
wherein, N represents the stage number of the unit charge pump in the charge pump boosting module, and VOUT represents the voltage of the output end of the operational amplifier module.
In one embodiment of the present invention, the ratio of the reference level VP of the non-inverting input of the operational amplifier module (130) to the dynamic bias voltage HV is:
Figure BDA0003451047230000031
wherein x is controlled in dependence on the digital signal of the comparison result received by the feedback input Cont.
In one embodiment of the present invention, it can be obtained from formula (1) and formula (2):
Figure BDA0003451047230000032
the dynamic bias voltage HV satisfies:
(N+1)×VOUTmin≤HV≤(N+1)×VOUTmax(4)
wherein VOUTminAnd VOUTmaxRespectively representing the minimum voltage value and the maximum voltage value of the output end voltage VOUT of the operational amplifier module limited by the swing amplitude.
The invention has the beneficial effects that:
the invention can set the highest and lowest stage rate threshold of the system according to the intensity information of the background light, compare and judge the current counting rate and the rated threshold counting rate through the counting rate comparison and judgment unit, feed back the comparison result to the dynamic high voltage generation unit, adjust the magnitude of the dynamic bias voltage HV, in order to change the magnitude of the reverse bias voltage of the SPAD device, thus change the photon detection efficiency of the device, when the background light intensity changes, make the photon counting rate in the laser echo detection process in the required range and difficult to reach the saturation, therefore can obtain the accurate photon number information of the laser echo all the time, improve the tolerance of the laser radar receiver system to the background light, improve the dynamic range of the device.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a high-voltage bias circuit of a single photon avalanche diode according to an embodiment of the present invention:
fig. 2 is a schematic structural diagram of a dynamic high voltage generation unit according to an embodiment of the present invention:
fig. 3 is a feedback flowchart of a high voltage bias circuit system of a single photon avalanche diode according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, a high voltage bias circuit of a single photon avalanche diode includes: a dynamic high voltage generating unit 100, an SPAD device and front end circuit unit 200, an optical pulse counting unit 300, and a counting rate comparing and determining unit 400.
The clock input end CLK of the dynamic high voltage generating unit 100 is connected to the output end of an external clock signal generating unit, the feedback input end Cont of the dynamic high voltage generating unit 100 is connected to the output end of the count rate comparing and determining unit 400, and the bias voltage output end of the dynamic high voltage generating unit 100 is connected to the input ends of the SPAD device and the front end circuit unit 200.
In this embodiment, the dynamic high voltage generating unit 100 is configured to provide a dynamic bias voltage HV higher than a reverse breakdown voltage of the SPAD device for the SPAD device of the SPAD device and the front-end circuit unit 200, so that the SPAD device in the SPAD device and the front-end circuit unit 200 operates in a geiger mode, and has sensitivity of single photon triggering, and can feedback and output a digital signal to the feedback input terminal Cont of the dynamic high voltage generating unit 100 through the count rate comparison and determination unit 400, and adjust the size of the dynamic bias voltage HV within a certain dynamic range to adapt to the influence of the background light, improve the tolerance of the background light, and increase the dynamic range of the device.
The output end of the SPAD device and front-end circuit unit 200 is connected to the input end of the optical pulse counting unit 300, and the SPAD device and front-end circuit unit 200 is configured to receive photons in the laser reflected echo from the target and output a voltage pulse signal. In this embodiment, the SPAD device is used for receiving photons in a reflected echo of a laser from a target object, and under the high voltage bias of a dynamic bias voltage HV, the SPAD device is in a geiger mode, has single photon sensitivity, and a single photon can trigger avalanche breakdown to generate a large amount of photocurrent.
The optical pulse counting unit 300 counts the voltage pulse signals and converts the counting result into a digital signal, which is output from the OUT terminal thereof, and the feedback output terminal of the optical pulse counting unit 300 is connected to the input terminal of the count rate comparing and determining unit 400. In this embodiment, the processing unit is configured to process a voltage pulse signal generated by the SPAD device and front-end circuit unit 200, count voltage pulses generated by triggering photons received in a laser echo receiving process in a unit time, obtain the total number of photons that receive and generate the voltage pulses in the unit time, convert a count result into a digital signal, output the digital signal from the OUT terminal, and transmit information of a current count rate R to the count rate comparison and determination unit 400 through the feedback output terminal.
The count rate comparing and determining unit 400 is used for presetting a maximum count rate threshold value R according to the background light information in the working environmentmaxAnd a minimum count rate threshold RminThe count rate R of the optical pulse counting unit 300 is compared with the maximum count rate threshold RmaxAnd a minimum count rate threshold RminComparing and judging, outputting the result to the feedback input end Cont of the dynamic high voltage generation unit 100 through the output end to adjust the dynamic bias voltage HV, further changing the photon detection efficiency of the SPAD device to adjust the counting rate R of the optical pulse counting unit 300, and enabling the counting rate R of the optical pulse counting unit 300 to be at the highest counting rate threshold R in the presence of the current background lightmaxAnd a minimum count rate threshold RminWithin the range, the tolerance of the system to background light is improved.
The dynamic high voltage generating unit 100 is configured to provide a dynamic bias voltage HV higher than a reverse breakdown voltage of the SPAD device and the SPAD device of the front-end circuit unit 200, so that the SPAD device and the SPAD device in the front-end circuit unit 200 operate in a geiger mode, and receive a comparison result of the count rate R of the optical pulse counting unit 300 and the count rate threshold through the feedback input terminal Cont, and output the comparison result after dynamically adjusting the magnitude of the dynamic bias voltage HV according to the comparison result.
The dynamic high-voltage generation circuit of the embodiment can compare and judge the current counting rate and the rated threshold counting rate through the counting rate comparison and judgment unit 400 according to the intensity information of the background light, the comparison result is fed back to the dynamic high-voltage generation unit 100, the size of the dynamic bias voltage HV is adjusted, so that the reverse bias voltage of the SPAD device is changed, the photon detection efficiency of the device is changed, when the background light intensity is changed, the photon counting rate in the laser echo detection process is in the required range and is not easy to reach saturation, accurate photon number information of the laser echo can be obtained all the time, the tolerance of a laser radar receiver system to the background light is improved, and the dynamic range of the device is improved.
In a possible implementation, the dynamic bias voltage HV has a voltage value greater than 16V and less than or equal to 20V.
Further, as shown in fig. 2, the dynamic high voltage generation unit 100 includes a four-phase clock control module 110, a charge pump boosting module 120, an operational amplifier module 130, and a resistor voltage division tap module 140.
The clock input end of the four-phase clock control module 110 is connected to the output end of the clock signal generation unit, the four output ends of the four-phase clock control module 110 are respectively connected to the four input ends of the charge pump boosting module 120, and the four-phase clock control module 110 is configured to convert the clock signal CLK generated by the clock signal generation unit into four-phase clock outputs to control the boosting process of the charge pump boosting module 120. The charge pump boost module 120 has five input terminals.
A fifth input end of the charge pump boosting module 120 is connected to an output end of the operational amplifier module 130, and a bias voltage output end of the charge pump boosting module 120 is connected to an input end of the SPAD device and front-end circuit unit 200 and a first input end of the resistance voltage dividing tap module 140; the output of the charge pump boost module 120 generates a dynamic bias voltage HV. The charge pump boosting module 120 completes the boosting process by using the same charge pump structure of N stages, and finally generates the dynamic bias voltage HV, where the magnitude of the dynamic bias voltage HV is the following expression:
HV＝(N+1)×VOUT (1)。
wherein, N represents the stage number of the unit charge pump in the charge pump boosting module, and VOUT represents the voltage of the output end of the operational amplifier module.
The non-inverting input terminal of the operational amplifier module 130 is connected to the reference level VP, and the inverting input terminal VN of the operational amplifier module 130 is connected to the third input terminal of the resistor voltage-dividing tap module 140. By using the "virtual short" characteristic of the operational amplifier, when the operational amplifier module 130 works normally, the level of the inverting input terminal VN should be equal to the reference level VP of the non-inverting input terminal, and therefore the level of the third input terminal of the resistance voltage division tap module 140 is also equal to the reference level of the non-inverting input terminal.
The feedback input terminal Cont of the resistance voltage division tap module 140 is connected to the output terminal of the count rate comparison and determination unit 400. The resistance voltage division tap module 140 is formed by serially connecting resistors, the highest level of the resistor string is a dynamic bias voltage HV, the lowest level is a ground potential, and taps are performed at different resistance voltage division positions through a transmission gate, wherein a feedback input end Cont is connected with an output end of the count rate comparison and determination unit 400, the position of the resistance voltage division tap is controlled and adjusted by a feedback input digital signal, a third input end is connected with the resistance voltage division tap, and the level of the third input end is a reference level VP of a non-inverting input end of the operational amplifier module 130. Therefore, the digital signal inputted through the feedback input terminal Cont controls the ratio of the reference level VP of the non-inverting input terminal of the operational amplifier module 130 to the highest level dynamic bias voltage HV of the resistor string, where VP is a fixed reference value, if the ratio of VP to HV is as follows:
Figure BDA0003451047230000081
from expression 1, the expression of VOUT at the output of the operational amplifier module 130 can be derived as follows:
Figure BDA0003451047230000082
as can be seen from the above expression, the dynamic high voltage generation unit 100 changes the magnitude of the ratio x in equation 2 by feeding back the digital signal input by the input terminal Cont, so as to change the magnitude of the dynamic bias voltage HV, thereby realizing the generation of the dynamic high voltage value, but the dynamic bias voltage HV has a certain range of variation. Since the dynamic bias voltage HV is changed by changing the voltage VOUT at the output terminal of the operational amplifier module 130 as shown in equations (1) and (3)In this embodiment, the magnitude of the voltage VOUT at the output terminal of the operational amplifier module 130 is limited by the output swing of the operational amplifier module 130. If VOUT has the maximum value VOUTmaxAnd minimum value VOUTminThen, the dynamic adjustment range of the dynamic bias voltage HV is as follows:
(N+1)×VOUTmin≤HV≤(N+1)×VOUTmax (4)。
wherein VOUTminAnd VOUTmaxRespectively representing the minimum voltage value and the maximum voltage value of the output end voltage VOUT of the operational amplifier module, which are limited by swing amplitude.
Thus, the dynamic high voltage generation unit 100 generates a dynamic bias voltage HV having a certain dynamic range.
For a single photon avalanche photodiode SPAD, the avalanche process is divided into two parts: absorption of photons produces excitation of the original carrier, avalanche state. In a practical working environment, the process capable of generating original carriers comprises the following steps: 1. absorption of laser signal photons reflected by the target object; 2. absorption of background light; 3. absorption of internal hot carriers. We define the Probability of avalanche breakdown of a single Photon absorbed by the device as Photon Detection Probability, PDP, to measure the sensitivity of the SPAD device, and Photon Detection Efficiency, PDE, i.e. the product of PDP and pixel fill factor. The portion of the bias voltage that exceeds the reverse breakdown voltage of the SPAD device is called an over-bias, and the size of the PDP is proportional to the size of the over-bias, and the size of the PDE is proportional to the size of the over-bias. If the magnitude of the over-bias voltage is fixed, in the process that the laser radar receives the photons of the echo and counts, due to the change of the background light intensity, the number of original carriers which may trigger avalanche breakdown of the SPAD device is changed, and then the number of photons of avalanche breakdown is changed, so that the background light can also introduce photons to generate a voltage pulse signal to enter the optical pulse counting unit 300, the photon counting rate and the counting result of the optical pulse counting unit 300 are changed, and even the counting rate is saturated.
Therefore, the lidar receiver plays a decisive role in the performance of the lidar system, where the tolerance of the background light and the dynamic range of the detection device are important performance indicators for the lidar receiver front-end circuit.
The invention sets the highest and lowest threshold values of the system photon counting rate according to the intensity information of the background light, generates a digital signal after the counting rate and the high and low threshold values are judged in the counting rate comparison and judgment unit 400, and feeds the digital signal back to the feedback input end Cont of the dynamic high voltage generation unit 100 for feedback regulation. The feedback input Cont of the dynamic high voltage generation unit 100 controls the ratio of the reference level VP of the non-inverting input of the operational amplifier module 130 to the dynamic bias voltage HV, and the above equation 4 realizes the change of the dynamic bias voltage HV within a certain dynamic range. The change of the dynamic bias voltage HV changes the magnitude of the over-bias voltage of the SPAD device, and further changes the PDP and the PDE of the SPAD device, so that the photon counting rate of the optical pulse counting unit 300 is within a high-low threshold range, that is, an ideal value in a working environment of the current background light condition, to adapt to the influence of the background light, and improve the tolerance of the laser radar receiver system to the background light.
Referring to fig. 3, fig. 3 is a feedback flow chart of a high voltage bias circuit system of a single photon avalanche diode according to an embodiment of the present invention, and the work flow of the whole system is as follows:
in one laser detection operation, the highest counting rate threshold value R of the photon pulse counting unit is firstly set according to the intensity information of the background lightmaxAnd a minimum count rate threshold RminAfter laser is emitted to a target object, a dynamic high-voltage generating circuit of the SPAD device starts to work, firstly, the dynamic high-voltage generating unit 100 generates an initial bias voltage (the voltage value of the initial bias voltage is a preset value) to provide a reverse bias voltage of the SPAD device, so that the SPAD device works in a Geiger mode and has single-photon triggering sensitivity, photons in reflected echoes of the laser from the target object irradiate the SPAD device and the SPAD device of the front-end circuit unit 200 to trigger avalanche breakdown to generate photocurrent, voltage pulse signals are generated after the photons pass through the SPAD device and the front-end circuit of the front-end circuit unit 200 and are input to a photon pulse counting unit, and voltage pulse signals are input to a photon pulse counting unitThe number is counted, and the current counting rate R is fed back and input to the counting rate comparison and judgment unit 400 during the counting process, and is compared with the highest counting threshold value RmaxBy comparison, if R>RmaxThen, the feedback signal controls the dynamic high voltage generation unit 100 to reduce the initial bias voltage and output the dynamic bias voltage HV to reduce the PDE of the SPAD device, further reduce the current count rate R, continue to feed back the current count rate R to the count rate comparison and determination unit 400, and reduce the dynamic bias voltage HV and output until R is reduced<Rmax(ii) a Then the current counting rate R and the lowest counting rate threshold value R are comparedminBy comparison, if R<RminThen the feedback signal controls the dynamic high voltage generation unit 100 to increase the dynamic bias voltage HV to increase the PDE of the SPAD device, thereby increasing the current count rate R until R>RminThen the comparison and judgment of the counting rate are finished, the above processes are continuously carried out in the receiving process, and the counting rate R is ensured to be always kept at Rmin<R<RmaxIn the range of (1), namely in the presence of the current background light, the counting rate is always kept in an ideal range, so that the aims of improving the tolerance of the background light and improving the dynamic range of the device are fulfilled.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise explicitly stated or limited, the terms "mounted," "connected," "fixed," and the like are to be construed broadly, e.g., as being permanently connected, detachably connected, or integral; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or may be connected through the use of two elements or the interaction of two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. "beneath," "under" and "beneath" a first feature includes the first feature being directly beneath and obliquely beneath the second feature, or simply indicating that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (5)

1. A high voltage bias circuit for a single photon avalanche diode, comprising: the device comprises a dynamic high-voltage generating unit (100), an SPAD device and front-end circuit unit (200), an optical pulse counting unit (300) and a counting rate comparison and judgment unit (400);
a clock input end CLK of the dynamic high-voltage generation unit (100) is connected with an output end of an external clock signal generation unit, a feedback input end Cont of the dynamic high-voltage generation unit (100) is connected with an output end of the counting rate comparison and judgment unit (400), and a bias voltage output end of the dynamic high-voltage generation unit (100) is connected with input ends of the SPAD device and the front-end circuit unit (200);
the output end of the SPAD device and front-end circuit unit (200) is connected with the input end of the optical pulse counting unit (300); the SPAD device and front-end circuit unit (200) is used for receiving photons in laser reflection echoes from a target and outputting a voltage pulse signal;
the optical pulse counting unit (300) counts the voltage pulse signals and converts counting results into digital signals, and the digital signals are output from an OUT end of the optical pulse counting unit, and a feedback output end of the optical pulse counting unit (300) is connected with an input end of the counting rate comparison and judgment unit (400);
the dynamic high voltage generating unit (100) is used for providing a dynamic bias voltage HV higher than a reverse breakdown voltage of an SPAD device of the SPAD device and front-end circuit unit (200), enabling the SPAD device in the SPAD device and the front-end circuit unit (200) to work in a Geiger mode, receiving a comparison result of a count rate R and a count rate threshold of the optical pulse counting unit (300) through the feedback input end Cont, and adjusting the magnitude of the dynamic bias voltage HV according to the comparison result to output the comparison result.
2. The high voltage bias circuit for a single photon avalanche diode according to claim 1, characterized in that said dynamic high voltage generation unit (100) comprises a four-phase clock control module (110), a charge pump boosting module (120), an operational amplifier module (130) and a resistance voltage division tap module (140);
the clock input end of the four-phase clock control module (110) is connected with the output end of a clock signal generation unit, four output ends of the four-phase clock control module (110) are respectively connected with four input ends of the charge pump boosting module (120), and the four-phase clock control module (110) is used for converting the clock signal CLK generated by the clock signal generation unit into clock outputs of four phases so as to control the boosting process of the charge pump boosting module (120);
a fifth input end of the charge pump boosting module (120) is connected with an output end of the operational amplifier module (130), and the bias voltage output end of the charge pump boosting module (120) is connected with input ends of the SPAD device and front-end circuit unit (200) and a first input end of the resistance voltage division tap module (140);
the non-inverting input end of the operational amplifier module (130) is connected with a reference level VP, and the inverting input end VN of the operational amplifier module (130) is connected with the third input end of the resistance voltage division tap module (140);
the feedback input end Cont of the resistance voltage division tap module (140) is connected with the output end of the counting rate comparison and judgment unit (400).
3. The high voltage bias circuit for a single photon avalanche diode according to claim 2, wherein said dynamic bias voltage HV is represented by the following formula:
HV＝(N+1)×VOUT (1)
wherein N represents the number of stages of a unit charge pump in the charge pump boosting module (120), and VOUT represents the voltage of the output end of the operational amplifier module (130).
4. The high voltage bias circuit for single photon avalanche diodes according to claim 3, characterized in that the ratio of the reference level VP of the non-inverting input of the operational amplifier module (130) to the dynamic bias voltage HV is:
Figure FDA0003451047220000021
wherein x is controlled in dependence on the digital signal of the comparison result received by the feedback input Cont.
5. The high voltage bias circuit for a single photon avalanche diode according to claim 4, characterized by the following equations (1) and (2):
Figure FDA0003451047220000031
the dynamic bias voltage HV satisfies:
(N+1)×VOUTmin≤HV≤(N+1)×VOUTmax (4)
wherein VOUTminAnd VOUTmaxRespectively representing the minimum voltage value and the maximum voltage value of the output end voltage VOUT of the operational amplifier module limited by the swing amplitude.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12063040B2 (en) 2022-09-28 2024-08-13 Stmicroelectronics (Research & Development) Limited Reconfigurable high voltage generation circuit for SPAD sensors

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