CN114624821A - End face coupler based on multilayer waveguide material structure and preparation method thereof - Google Patents
End face coupler based on multilayer waveguide material structure and preparation method thereof Download PDFInfo
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- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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Abstract
The invention relates to an end face coupler based on a multilayer waveguide material structure and a preparation method thereof, wherein the end face coupler is formed by sequentially arranging a substrate layer, an oxygen burying layer, a first waveguide layer, a first isolating layer, a second waveguide layer, a second isolating layer, a third waveguide layer and an upper cladding layer from bottom to top; the first waveguide layer comprises two input S-shaped waveguides and one output waveguide; the input S-shaped waveguide is formed by sequentially connecting an input tapered waveguide, an input straight waveguide, an S-shaped bent waveguide, an input straight waveguide and an output tapered waveguide; the output waveguide is formed by sequentially connecting an input tapered waveguide, an input straight waveguide and an output tapered waveguide; the waveguide structure of the third waveguide layer is the same as that of the first waveguide layer, and the corresponding waveguide structures in the two layers of structures are aligned in the vertical direction; the second waveguide layer comprises an output waveguide formed by sequentially connecting an input tapered waveguide and an output straight waveguide. The invention can realize the coupling of the optical fiber or the laser and the nanowire waveguide, increase the alignment tolerance and improve the coupling efficiency.
Description
Technical Field
The invention relates to an end face coupler based on a multilayer waveguide material structure and a preparation method thereof, belonging to the technical field of semiconductor preparation.
Background
With the rapid development of optical communication, internet and the like, data transmission and processing speed is developing to a higher rate, and silicon photonic technology becomes one of solutions for high-speed optical communication devices and systems. Because the silicon photonic device is compatible with the existing CMOS standard process, the silicon photonic device can be integrated with a microelectronic integrated circuit to realize the on-chip optical interconnection with high performance, low cost, small size and high integration level. Therefore, SOI-based silicon-based optoelectronic devices have become a focus of research.
The key part of the silicon-based photonic chip packaging technology is to realize coupling connection between optical signals in a chip and external optical signals (mostly optical fibers). The core diameter of the single-mode optical fiber is about 8-10 micrometers, the size of the cross section of the silicon optical chip waveguide is smaller than 1 micrometer, the size difference of the two is large, the coupling loss of direct butt coupling of the two is large, and the coupling loss is large, so that the single-mode optical fiber and the silicon optical chip waveguide are difficult to use in practical application. Therefore, a special coupler needs to be designed at the input/output end of the chip to improve the coupling efficiency. The coupler has two modes of end face coupling and vertical grating coupling. The grating coupler has low coupling efficiency and is not beneficial to packaging, and is mostly used for design test of silicon optical chips. The end face coupling has the characteristics of simple packaging process, high coupling efficiency and the like, and is widely applied.
The end face coupling is realized by directly aligning the waveguide cross section of the chip input/output port with the cross section of the optical fiber through the spot-size converter, so that the mode field of the single-mode optical fiber is matched with the mode field of the silicon waveguide, and the optimal coupling efficiency is achieved. The coupling method of the conventional planar waveguide chip is to align and couple with the end face waveguide of the chip through a Fiber Array (FA). The coupling end face of the chip and the optical fiber array only uses one glue, and simultaneously realizes refractive index matching and strength bonding.
Therefore, it is of great significance to design a silicon-based coupler with simple packaging process, high coupling efficiency with common single-mode fiber and laser, and large alignment tolerance by adopting reasonable materials.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the invention provides an end face coupler based on a multilayer waveguide material structure and a preparation method thereof, which are used for solving the problem of low coupling efficiency of a silicon-based photonic chip, an optical fiber and a laser in the prior art and improving the coupling efficiency and the coupling tolerance of a silicon waveguide coupler.
The technical scheme of the invention is as follows: in a first aspect, the invention provides an end-face coupler based on a multilayer waveguide material structure, which comprises an upper cladding layer 1, a substrate layer 2, a buried oxide layer 3, a first waveguide layer 4, a first isolation layer 5, a second waveguide layer 6, a second isolation layer 7 and a third waveguide layer 8;
the buried oxide layer 3 is arranged on the substrate layer 2, the first waveguide layer 4 is arranged on the buried oxide layer 3, the first isolating layer 5 is arranged on the first waveguide layer 4, the second waveguide layer 6 is arranged on the first isolating layer 5, the second isolating layer 7 is arranged on the second waveguide layer 6, and the third waveguide layer 8 is arranged on the second isolating layer 7; the first waveguide layer 4, the second waveguide layer 6 and the third waveguide layer 8 are arranged in the same direction; the first waveguide layer 4 comprises two input S-shaped waveguides X1 and one output waveguide X2; the input S-shaped waveguide X1 in the first waveguide layer 4 is formed by sequentially connecting an input tapered waveguide Y1, an input straight waveguide Y2, an S-shaped bent waveguide Y3, an input straight waveguide Y4 and an output tapered waveguide Y5; the output waveguide X2 in the first waveguide layer 4 is formed by sequentially connecting an input tapered waveguide H1, an input straight waveguide H2 and an output tapered waveguide H3; the tip of the input tapered waveguide Y1 and the tip of the input tapered waveguide H1 are towards the left, and the tip of the output tapered waveguide Y5 and the tip of the output tapered waveguide H3 are towards the right; the waveguide structure in the third waveguide layer 8 is the same as the waveguide structure in the first waveguide layer 4, and the corresponding waveguide structures in the two layers are aligned in the vertical direction; the second waveguide layer 6 is an intermediate waveguide layer and comprises an output waveguide X3, and is formed by sequentially connecting an input tapered waveguide Z1 and an output straight waveguide Z2; the upper cladding layer 1 is disposed over the third waveguide layer 8.
As a further aspect of the present invention, the waveguide material of the first waveguide layer 4, the second waveguide layer 6, and the third waveguide layer 8 is Si-based waveguide, SiN, SiON, or α -Si.
As a further aspect of the present invention, the first isolation layer 5 and the second isolation layer 7 are both silicon dioxide.
As a further aspect of the present invention, the two leftmost waveguide structures of the first waveguide layer 4 and the third waveguide layer 8 are identical and symmetrical, and the output ends of the two input S-shaped waveguides X1 of the first waveguide layer 4 and the third waveguide layer 8 and the output waveguide X2 form a directional coupler structure of a three-waveguide structure in a horizontal plane.
As a further aspect of the present invention, the distance between the two input tapered waveguides Y1 on the left side of the first waveguide layer 4 or the third waveguide layer 8 is between 0.5 μm and 5 μm.
As a further aspect of the present invention, each of the output waveguides X2 in the first waveguide layer 4 and the third waveguide layer 8 and the output waveguide X3 in the second waveguide layer 6 are on the same vertical plane, and form a directional coupler structure of a three-waveguide structure in the vertical direction.
As a further aspect of the present invention, each of the output waveguides X2 of the first waveguide layer 4 and the third waveguide layer 8 is coupled to the output waveguide X3 of the second waveguide layer 6 by DC structure coupling.
As a further scheme of the invention, the coupling of the waveguide with the optical fiber and the laser is realized by the following modes: the four input tapered waveguides Y1 couple the two signal lights connected to the input tapered waveguide Y1 into the output waveguide X2 by the directional coupler of the three waveguide structure in each layer in the horizontal direction, and the two signal lights are sequentially coupled into the input straight waveguide Y2, the S-shaped curved waveguide Y3, the input straight waveguide Y4, and the output tapered waveguide Y5, and finally coupled into the output waveguide X2, where the directional coupler of the three waveguide structure in the vertical direction is formed by the two output waveguides X2 of the first waveguide layer 4 and the third waveguide layer 8 and the output waveguide X3 of the second waveguide layer 6, and the signal lights of the two layers of the first waveguide layer 4 and the third waveguide layer 8 enter the output waveguide X3 of the second waveguide layer 6 by the directional coupler of the three waveguide structure in the vertical direction.
In a second aspect, the present invention further provides a method for manufacturing an end-face coupler based on a multilayer waveguide material structure, wherein when the material of the first layer of waveguide layer is monocrystalline silicon and the material of the second layer of waveguide layer is α -Si, the method specifically comprises the following steps:
step1, taking an SOI wafer, cleaning the SOI wafer by using a cleaning solvent, and carrying out photoetching after cleaning, wherein photoetching comprises spin coating, exposure, development and drying, and then carrying out dry etching, photoresist removal and cleaning on a pattern to obtain a first waveguide layer 4;
step2, depositing a layer of silicon dioxide on the first waveguide layer 4 manufactured in the Step1 by utilizing a PECVD technology to be used as an upper cladding layer of the first waveguide layer;
step3, carrying out reverse etching on the upper cladding layer of the first waveguide layer manufactured in the Step2 to serve as a first isolating layer 5;
step4, performing chemical polishing on the surface of the silicon dioxide layer on the first isolation layer 5 manufactured in the Step3 by utilizing a CMP technology to obtain a smooth surface, and then cleaning;
step5, depositing an alpha-Si layer on the first isolating layer 5 manufactured in the Step4 by using an LPCVD (low pressure chemical vapor deposition) technology, polishing and cleaning, photoetching, and etching to obtain a second waveguide layer waveguide as a second waveguide layer 6;
step6, depositing a layer of silicon dioxide on the second waveguide layer 6 manufactured in Step5 by utilizing a PECVD technology to serve as an upper cladding layer of the second waveguide layer;
step7, performing reverse etching on the upper cladding layer of the second waveguide layer manufactured in Step6 to serve as a second isolation layer 7;
step8, performing chemical polishing on the surface of the silicon dioxide layer on the second isolation layer 7 manufactured in the Step7 by utilizing a CMP technology to obtain a smooth surface, and then cleaning;
step9, depositing an alpha-Si layer on the second isolating layer 7 manufactured in the Step8 by using an LPCVD (low pressure chemical vapor deposition) technology, polishing and cleaning, photoetching, and etching to obtain a third waveguide layer waveguide as a third waveguide layer 8;
step10, depositing a silica upper cladding layer on the third waveguide layer 8 obtained in Step9, to obtain the final structure.
In a third aspect, the present invention further provides a method for preparing an end-face coupler based on a multilayer waveguide material structure, where the first, second, and third layers of waveguide material are silicon nitride, the method specifically includes the following steps:
step1, taking a pure silicon wafer, cleaning, carrying out thermal oxidation to obtain an oxygen buried layer 3, and carrying out chemical polishing on the obtained surface by utilizing a CMP technology to obtain a smooth surface;
step2, depositing a silicon nitride layer on the buried oxide layer 3 manufactured in Step1 by using an LPCVD (low pressure chemical vapor deposition) technology, polishing, then carrying out photoetching, wherein the photoetching comprises photoresist throwing, exposure, development, drying, etching again, and finally removing photoresist and cleaning to obtain a first waveguide layer 4;
step3, depositing a layer of silicon dioxide on the first waveguide layer 4 manufactured in the Step2 by utilizing a PECVD technology to serve as an upper cladding layer of the first waveguide layer;
step4, performing reverse etching on the upper cladding layer of the first waveguide layer manufactured in Step3 to serve as a first isolation layer 5;
step5, performing chemical polishing on the surface of the silicon dioxide layer on the first isolation layer 5 manufactured in the Step4 by utilizing a CMP technology to obtain a smooth surface, and then cleaning;
step6, depositing a silicon nitride layer on the first isolation layer 5 manufactured in the Step5 by using an LPCVD (low pressure chemical vapor deposition) technology, polishing, then carrying out photoetching, wherein the photoetching comprises photoresist throwing, exposure, development, drying, etching again, and finally removing photoresist and cleaning to obtain a second waveguide layer 6;
step7, depositing a layer of silicon dioxide on the second waveguide layer 6 manufactured in Step6 by utilizing a PECVD technology to serve as an upper cladding layer of the second waveguide layer;
step8, carrying out reverse etching on the upper cladding layer of the first waveguide layer manufactured in the Step7 to serve as a second isolation layer 7;
step9, performing chemical polishing on the surface of the silicon dioxide layer on the second isolation layer 7 manufactured in the Step8 by utilizing a CMP technology to obtain a smooth surface, and then cleaning;
step10, depositing a silicon nitride layer on the second isolation layer 7 manufactured in the Step9 by using an LPCVD (low pressure chemical vapor deposition) technology, polishing, then carrying out photoetching, wherein the photoetching comprises spin coating, exposure, development, drying, etching again, and finally removing photoresist and cleaning to obtain a third waveguide layer 8;
step11, depositing a silica upper cladding layer on the third waveguide layer 8 obtained in Step10, to obtain the final structure.
The invention has the beneficial effects that: the invention adopts three layers of waveguide structures, each layer of waveguide is provided with a transmission waveguide structure and a coupling waveguide structure, the structure reliability is high, the invention is compatible with CMOS technology, and the mass production can be realized. The packaging is simple, the end face coupler based on the multilayer waveguide material structure can be directly and better coupled with the optical fiber and the laser, the optical coupling efficiency is improved, the alignment tolerance is increased, and the large-scale optical path integration is facilitated.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention. In the drawings, like reference numerals are used to indicate like elements. The drawings in the following description are directed to some, but not all embodiments of the invention. For a person skilled in the art, other figures can be derived from these figures without inventive effort.
Fig. 1 is a schematic structural diagram of an end-face coupler based on a multilayer waveguide material structure according to the present invention.
Fig. 2 to 12 show a method for manufacturing an end-face coupler based on a multilayer waveguide material structure according to a first embodiment, in which an upper cladding layer is omitted for clarity of the waveguide structure.
Fig. 2 is a schematic side view of the intermediate structure obtained in step1 according to the first embodiment of the present invention.
Fig. 3 is a schematic top view of the intermediate structure obtained in step1 according to the first embodiment of the present invention.
Fig. 4 is a schematic end view of the intermediate structure obtained in step1 according to the first embodiment of the present invention.
Fig. 5 is a schematic diagram of an intermediate structure obtained in step3 according to an embodiment of the present invention.
Fig. 6 is a schematic side view of the intermediate structure obtained in step5 according to the first embodiment of the present invention.
Fig. 7 is a schematic top view of the intermediate structure obtained in step5 according to the first embodiment of the present invention.
Fig. 8 is a schematic end view of the intermediate structure obtained in step5 in the first embodiment of the present invention.
Fig. 9 is a schematic diagram of an intermediate structure obtained in step7 according to an embodiment of the present invention.
Fig. 10 is a schematic side view of an intermediate structure obtained in step9 according to an embodiment of the present invention.
Fig. 11 is a schematic top view of the intermediate structure obtained in step9 according to the first embodiment of the present invention.
Fig. 12 is a schematic end view of an intermediate structure obtained in step9 according to an embodiment of the present invention.
Fig. 13 shows the specific structure of the top surfaces of the first and third waveguide layers according to the present invention.
Fig. 14 shows a top side view of a second waveguide layer according to the present invention.
The various reference numbers in FIGS. 1-14: 1-upper cladding layer, 2-substrate layer, 3-buried oxide layer, 4-first waveguide layer, 5-first isolation layer, 6-second waveguide layer, 7-second isolation layer, 8-third waveguide layer, X1-input S-shaped waveguide (Y1-input tapered waveguide, Y2-input straight waveguide, Y3-S-shaped curved waveguide, Y4-input straight waveguide, Y5-output tapered waveguide), X2-output waveguide (H1-input tapered waveguide, H2-input straight waveguide, H3-output tapered waveguide), X3-output waveguide (Z1-input tapered waveguide, Z2-output straight waveguide).
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
The end-face coupler based on the multilayer waveguide material structure and the preparation method thereof provided by the invention are described in detail below with reference to the accompanying drawings.
Example 1: as shown in fig. 1-14, in a first aspect, the present invention provides an end-face coupler based on a multilayer waveguide material structure, which includes an upper cladding layer 1, a substrate layer 2, a buried oxide layer 3, a first waveguide layer 4, a first isolation layer 5, a second waveguide layer 6, a second isolation layer 7, and a third waveguide layer 8;
the buried oxide layer 3 is arranged on the substrate layer 2, the first waveguide layer 4 is arranged on the buried oxide layer 3, the first isolating layer 5 is arranged on the first waveguide layer 4, the second waveguide layer 6 is arranged on the first isolating layer 5, the second isolating layer 7 is arranged on the second waveguide layer 6, and the third waveguide layer 8 is arranged on the second isolating layer 7; the first waveguide layer 4, the second waveguide layer 6 and the third waveguide layer 8 are arranged in the same direction; the first waveguide layer 4 comprises two input S-shaped waveguides X1 and an output waveguide X2; the input S-shaped waveguide X1 in the first waveguide layer 4 is formed by sequentially connecting an input tapered waveguide Y1, an input straight waveguide Y2, an S-shaped bent waveguide Y3, an input straight waveguide Y4 and an output tapered waveguide Y5; the output waveguide X2 in the first waveguide layer 4 is formed by sequentially connecting an input tapered waveguide H1, an input straight waveguide H2 and an output tapered waveguide H3; the tip of the input tapered waveguide Y1 and the tip of the input tapered waveguide H1 are towards the left, and the tip of the output tapered waveguide Y5 and the tip of the output tapered waveguide H3 are towards the right; the waveguide structure in the third waveguide layer 8 is the same as the waveguide structure in the first waveguide layer 4, and the corresponding waveguide structures in the two layers are aligned in the vertical direction; the second waveguide layer 6 is an intermediate waveguide layer and comprises an output waveguide X3, and is formed by sequentially connecting an input tapered waveguide Z1 and an output straight waveguide Z2; the upper cladding layer 1 is disposed over the third waveguide layer 8.
As a further aspect of the present invention, the waveguide material of the first waveguide layer 4, the second waveguide layer 6, and the third waveguide layer 8 is Si-based waveguide, SiN, SiON, or α -Si.
As a further aspect of the present invention, the first isolation layer 5 and the second isolation layer 7 are both silicon dioxide.
As a further aspect of the present invention, the two leftmost waveguide structures of the first waveguide layer 4 and the third waveguide layer 8 are identical and symmetrical, and the output ends of the two input S-shaped waveguides X1 of the first waveguide layer 4 and the third waveguide layer 8 and the output waveguide X2 form a directional coupler structure of a three-waveguide structure in a horizontal plane.
As a further aspect of the present invention, the distance between the two input tapered waveguides Y1 on the left side of the first waveguide layer 4 or the third waveguide layer 8 is between 0.5 μm and 5 μm.
As a further aspect of the present invention, each of the output waveguides X2 in the first waveguide layer 4 and the third waveguide layer 8 and the output waveguide X3 in the second waveguide layer 6 are on the same vertical plane, and form a directional coupler structure of a three-waveguide structure in the vertical direction.
As a further aspect of the present invention, each of the output waveguides X2 of the first waveguide layer 4 and the third waveguide layer 8 is coupled to the output waveguide X3 of the second waveguide layer 6 by DC structure coupling.
As a further scheme of the invention, the coupling of the waveguide with the optical fiber and the laser is realized by the following modes: the four input tapered waveguides Y1 couple the two signal lights connected to the input tapered waveguide Y1 into the output waveguide X2 by the directional coupler of the three waveguide structure in each layer in the horizontal direction, and the two signal lights are sequentially coupled into the input straight waveguide Y2, the S-shaped curved waveguide Y3, the input straight waveguide Y4, and the output tapered waveguide Y5, and finally coupled into the output waveguide X2, where the directional coupler of the three waveguide structure in the vertical direction is formed by the two output waveguides X2 of the first waveguide layer 4 and the third waveguide layer 8 and the output waveguide X3 of the second waveguide layer 6, and the signal lights of the two layers of the first waveguide layer 4 and the third waveguide layer 8 enter the output waveguide X3 of the second waveguide layer 6 by the directional coupler of the three waveguide structure in the vertical direction.
The working principle of the invention is as follows: the invention is applied to the coupling of the nanowire waveguide and the optical fiber or the laser. Optical signals from an optical fiber or a laser are coupled into four nanowire waveguides (two for each layer and four in total as shown in the figure) at an upper layer and a lower layer through four input tapered waveguides Y1 at the left end; two signal lights connected with the input tapered waveguide Y1 on each layer are coupled by a directional coupler with a three-waveguide structure in the horizontal direction, sequentially pass through the input straight waveguide Y2, the S-shaped bent waveguide Y3, the input straight waveguide Y4 and the output tapered waveguide Y5, and finally are coupled to enter the output waveguide X2; the upper and lower layers of output waveguides and the middle layer of waveguide form a directional coupler with a three-waveguide structure in the vertical direction, and the upper and lower layers of signal light enter the middle layer of output waveguide through the directional coupler with the three-waveguide structure in the vertical direction, so that the input optical signals enter the middle layer of waveguide through the four input tapered waveguides and the two-stage directional coupler in the process.
In a second aspect, this embodiment further provides a method for manufacturing an end-face coupler based on a multilayer waveguide material structure as described in the first aspect, where the first layer of waveguide material is monocrystalline silicon, and the second layer of waveguide material is α -Si, the method includes the following specific steps:
step1, taking an SOI wafer, cleaning the SOI wafer by using a cleaning solvent, and carrying out photoetching after cleaning, wherein photoetching comprises spin coating, exposure, development and drying, and then carrying out dry etching, photoresist removal and cleaning on a pattern to obtain a first waveguide layer 4;
step2, depositing a layer of silicon dioxide on the first waveguide layer 4 manufactured in Step1 by utilizing a PECVD technology to be used as an upper cladding layer of the first waveguide layer;
step3, carrying out reverse etching on the upper cladding layer of the first waveguide layer manufactured in the Step2 to serve as a first isolating layer 5;
step4, chemically polishing the surface of the obtained silicon dioxide layer on the first isolation layer 5 manufactured in Step3 by utilizing a CMP technology to obtain a smooth surface, and then cleaning;
step5, depositing an alpha-Si layer on the first isolating layer 5 manufactured in the Step4 by using an LPCVD (low pressure chemical vapor deposition) technology, polishing and cleaning, photoetching, and etching to obtain a second waveguide layer waveguide as a second waveguide layer 6;
step6, depositing a layer of silicon dioxide on the second waveguide layer 6 manufactured in Step5 by utilizing a PECVD technology to serve as an upper cladding layer of the second waveguide layer;
step7, carrying out reverse etching on the upper cladding layer of the second waveguide layer manufactured in the Step6 to serve as a second isolation layer 7;
step8, performing chemical polishing on the surface of the silicon dioxide layer on the second isolation layer 7 manufactured in the Step7 by utilizing a CMP technology to obtain a smooth surface, and then cleaning;
step9, depositing an alpha-Si layer on the second isolation layer 7 manufactured in Step8 by using an LPCVD (low pressure chemical vapor deposition) technology, polishing and cleaning, performing photoetching, and etching a third waveguide layer waveguide to be used as a third waveguide layer 8;
step10, depositing a silica upper cladding layer on the third waveguide layer 8 obtained in Step9, to obtain the final structure.
step1, taking a pure silicon wafer, cleaning, carrying out thermal oxidation to obtain an oxygen buried layer 3, and carrying out chemical polishing on the obtained surface by utilizing a CMP technology to obtain a smooth surface;
step2, depositing a silicon nitride layer on the buried oxide layer 3 manufactured in the Step1 by using an LPCVD (low pressure chemical vapor deposition) technology, polishing, then carrying out photoetching, wherein the photoetching comprises photoresist throwing, exposure, development, drying, etching again, and finally removing photoresist and cleaning to obtain a first waveguide layer 4;
step3, depositing a layer of silicon dioxide on the first waveguide layer 4 manufactured in the Step2 by utilizing a PECVD technology to serve as an upper cladding layer of the first waveguide layer;
step4, carrying out reverse etching on the upper cladding layer of the first waveguide layer manufactured in the Step3 to serve as a first isolating layer 5;
step5, performing chemical polishing on the surface of the silicon dioxide layer on the first isolation layer 5 manufactured in the Step4 by utilizing a CMP technology to obtain a smooth surface, and then cleaning;
step6, depositing a silicon nitride layer on the first isolation layer 5 manufactured in the Step5 by using an LPCVD (low pressure chemical vapor deposition) technology, polishing, then carrying out photoetching, wherein the photoetching comprises photoresist throwing, exposure, development, drying, etching again, and finally removing photoresist and cleaning to obtain a second waveguide layer 6;
step7, depositing a layer of silicon dioxide on the second waveguide layer 6 manufactured in Step6 by utilizing a PECVD technology to serve as an upper cladding layer of the second waveguide layer;
step8, carrying out reverse etching on the upper cladding layer of the first waveguide layer manufactured in the Step7 to serve as a second isolation layer 7;
step9, performing chemical polishing on the surface of the silicon dioxide layer on the second isolation layer 7 manufactured in the Step8 by utilizing a CMP technology to obtain a smooth surface, and then cleaning;
step10, depositing a silicon nitride layer on the second isolation layer 7 manufactured in the Step9 by using an LPCVD (low pressure chemical vapor deposition) technology, polishing, then carrying out photoetching, wherein the photoetching comprises spin coating, exposure, development, drying, etching again, and finally removing photoresist and cleaning to obtain a third waveguide layer 8;
step11, depositing a silica upper cladding layer on the third waveguide layer 8 obtained in Step10, to obtain the final structure.
The above-described aspects may be implemented individually or in various combinations, and such variations are within the scope of the present invention.
It is to be noted that, in the present invention, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the term "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of additional like elements in the article or device comprising the element.
The above embodiments are merely to illustrate the technical solutions of the present invention and not to limit the present invention, and the present invention has been described in detail with reference to the preferred embodiments. It will be understood by those skilled in the art that various modifications and equivalents may be made thereto without departing from the spirit and scope of the present invention, and the appended claims are to encompass within their scope all such modifications and equivalents.
Claims (10)
1. An end-face coupler based on a multilayer waveguide material structure, characterized in that: the method comprises the following steps: the multilayer optical waveguide comprises an upper cladding layer (1), a substrate layer (2), a buried oxide layer (3), a first waveguide layer (4), a first isolation layer (5), a second waveguide layer (6), a second isolation layer (7) and a third waveguide layer (8);
the buried oxide layer (3) is arranged on the substrate layer (2), the first waveguide layer (4) is arranged on the buried oxide layer (3), the first isolating layer (5) is arranged on the first waveguide layer (4), the second waveguide layer (6) is arranged on the first isolating layer (5), the second isolating layer (7) is arranged on the second waveguide layer (6), and the third waveguide layer (8) is arranged on the second isolating layer (7); the first waveguide layer (4), the second waveguide layer (6) and the third waveguide layer (8) are arranged in the same direction; the first waveguide layer (4) comprises two input S-shaped waveguides X1 and an output waveguide X2; the input S-shaped waveguide X1 in the first waveguide layer (4) is formed by sequentially connecting an input tapered waveguide Y1, an input straight waveguide Y2, an S-shaped bent waveguide Y3, an input straight waveguide Y4 and an output tapered waveguide Y5; the output waveguide X2 in the first waveguide layer (4) is formed by sequentially connecting an input tapered waveguide H1, an input straight waveguide H2 and an output tapered waveguide H3; the tip of the input tapered waveguide Y1 and the tip of the input tapered waveguide H1 are towards the left, and the tip of the output tapered waveguide Y5 and the tip of the output tapered waveguide H3 are towards the right; the waveguide structure in the third waveguide layer (8) is the same as the waveguide structure in the first waveguide layer (4), and the corresponding waveguide structures in the two layers are aligned in the vertical direction; the second waveguide layer (6) is an intermediate waveguide layer which contains an output waveguide X3 and is formed by sequentially connecting an input tapered waveguide Z1 and an output straight waveguide Z2; the upper cladding (1) is disposed over the third waveguide layer (8).
2. The multilayer waveguide material structure-based end-face coupler of claim 1, wherein: the waveguide materials of the first waveguide layer (4), the second waveguide layer (6) and the third waveguide layer (8) are silicon-based waveguides Si, SiN, SiON or alpha-Si.
3. The multilayer waveguide material structure-based end-face coupler of claim 1, wherein: the first isolation layer (5) and the second isolation layer (7) are both made of silicon dioxide.
4. The multilayer waveguide material structure-based end-face coupler of claim 1, wherein: the two leftmost waveguide structures of the first waveguide layer (4) and the third waveguide layer (8) are identical and symmetrical, and the output ends of the two input S-shaped waveguides X1 of the first waveguide layer (4) and the third waveguide layer (8) and the output waveguide X2 form a directional coupler structure with a three-waveguide structure in a horizontal plane.
5. The multilayer waveguide material structure-based end-face coupler of claim 1, wherein: the distance between the two input tapered waveguides Y1 on the left side of the first waveguide layer (4) or the third waveguide layer (8) is 0.5-5 μm.
6. The multilayer waveguide material structure-based end-face coupler of claim 1, wherein: and each output waveguide X2 in the first waveguide layer (4) and the third waveguide layer (8) and the output waveguide X3 in the second waveguide layer (6) are in the same vertical plane and form a directional coupler structure of a three-waveguide structure in the vertical direction.
7. The multilayer waveguide material structure-based end-face coupler of claim 1, wherein: the output waveguides X2 of the first waveguide layer (4) and the third waveguide layer (8) are coupled to the output waveguides X3 of the second waveguide layer (6) by means of a DC structure to achieve coupling.
8. The multilayer waveguide material structure-based end-face coupler of claim 1, wherein: the coupling of the waveguide with the optical fiber and the laser is realized by the following modes: the four input tapered waveguides Y1 couple the two signal lights connected with the input tapered waveguide Y1 into the output waveguide X2 through the directional coupler with the three-waveguide structure in each layer in the horizontal direction, the input straight waveguide Y2, the S-shaped bent waveguide Y3, the input straight waveguide Y4 and the output tapered waveguide Y5 in sequence, the two signal lights are coupled into the output waveguide X2, the two output waveguides X2 of the first waveguide layer (4) and the third waveguide layer (8) and the output waveguide X3 of the second waveguide layer (6) form the directional coupler with the three-waveguide structure in the vertical direction, and the signal lights of the two layers of the first waveguide layer (4) and the third waveguide layer (8) enter the output waveguide X3 of the second waveguide layer (6) through the directional coupler with the three-waveguide structure in the vertical direction.
9. A preparation method of an end face coupler based on a multilayer waveguide material structure is characterized by comprising the following steps: when the first layer of waveguide layer material is monocrystalline silicon and the second layer of waveguide layer material is alpha-Si, the method comprises the following specific steps:
step1, taking an SOI wafer, cleaning the SOI wafer by using a cleaning solvent, and carrying out photoetching after cleaning, wherein photoetching comprises spin coating, exposure, development and drying, and then carrying out dry etching, photoresist removal and cleaning on a pattern to be used as a first waveguide layer (4);
step2, depositing a layer of silicon dioxide on the first waveguide layer (4) manufactured in the Step1 by utilizing a PECVD technology to serve as an upper cladding layer of the first waveguide layer;
step3, carrying out reverse etching on the upper cladding layer of the first waveguide layer manufactured in the Step2 to be used as a first isolating layer (5);
step4, performing chemical polishing on the surface of the silicon dioxide layer on the first isolation layer (5) manufactured in the Step3 by utilizing a CMP technology to obtain a smooth surface, and then cleaning;
step5, depositing an alpha-Si layer on the first isolating layer (5) manufactured in the Step4 by using an LPCVD (low pressure chemical vapor deposition) technology, polishing and cleaning, carrying out photoetching, and etching a second waveguide layer waveguide to be used as a second waveguide layer (6);
step6, depositing a layer of silicon dioxide on the second waveguide layer (6) manufactured in the Step5 by utilizing a PECVD technology to serve as an upper cladding layer of the second waveguide layer;
step7, carrying out reverse etching on the upper cladding layer of the second waveguide layer manufactured in the Step6 to be used as a second isolation layer (7);
step8, performing chemical polishing on the surface of the silicon dioxide layer on the second isolating layer (7) manufactured in the Step7 by utilizing a CMP technology to obtain a smooth surface, and then cleaning;
step9, depositing an alpha-Si layer on the second isolating layer (7) manufactured in the Step8 by using an LPCVD (low pressure chemical vapor deposition) technology, polishing and cleaning, photoetching and etching a third waveguide layer waveguide to be used as a third waveguide layer (8);
and Step10, depositing a silicon dioxide upper cladding layer on the third waveguide layer (8) obtained in the Step9 to obtain a final structure.
10. A preparation method of an end face coupler based on a multilayer waveguide material structure is characterized by comprising the following steps: when the first, second and third layers of waveguide layer are made of silicon nitride, the method comprises the following specific steps:
step1, taking a pure silicon wafer, cleaning, carrying out thermal oxidation to obtain an oxygen buried layer (3), and carrying out chemical polishing on the obtained surface by utilizing a CMP technology to obtain a smooth surface;
step2, depositing a silicon nitride layer on the buried oxide layer (3) manufactured in the Step1 by using an LPCVD (low pressure chemical vapor deposition) technology, polishing, then carrying out photoetching, wherein the photoetching comprises photoresist throwing, exposure, development, drying, etching again, and finally carrying out photoresist removing and cleaning to obtain a first waveguide layer (4);
step3, depositing a layer of silicon dioxide on the first waveguide layer (4) manufactured in the Step2 by utilizing a PECVD technology to serve as an upper cladding layer of the first waveguide layer;
step4, carrying out reverse etching on the upper cladding layer of the first waveguide layer manufactured in the Step3 to be used as a first isolating layer (5);
step5, performing chemical polishing on the surface of the silicon dioxide layer on the first isolation layer (5) manufactured in the Step4 by utilizing a CMP technology to obtain a smooth surface, and then cleaning;
step6, depositing a silicon nitride layer on the first isolating layer (5) manufactured in Step5 by using an LPCVD (low pressure chemical vapor deposition) technology, polishing, then carrying out photoetching, wherein the photoetching comprises whirl coating, exposure, development, drying, etching, and finally removing photoresist and cleaning to obtain a second waveguide layer (6);
step7, depositing a layer of silicon dioxide on the second waveguide layer (6) manufactured in the Step6 by utilizing a PECVD technology to serve as an upper cladding layer of the second waveguide layer;
step8, carrying out reverse etching on the upper cladding layer of the first waveguide layer manufactured in the Step7 to be used as a second isolation layer (7);
step9, performing chemical polishing on the surface of the silicon dioxide layer on the second isolating layer (7) manufactured in the Step8 by utilizing a CMP technology to obtain a smooth surface, and then cleaning;
step10, depositing a silicon nitride layer on the second isolation layer (7) manufactured in the Step9 by using an LPCVD (low pressure chemical vapor deposition) technology, polishing, then carrying out photoetching, wherein the photoetching comprises photoresist throwing, exposure, development, drying, etching, finally removing photoresist and cleaning to obtain a third waveguide layer (8);
and Step11, depositing a silicon dioxide upper cladding layer on the third waveguide layer (8) obtained in the Step10 to obtain a final structure.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230104227A1 (en) * | 2021-10-04 | 2023-04-06 | Globalfoundries U.S. Inc. | Edge couplers with confining features |
| CN116661060A (en) * | 2023-07-28 | 2023-08-29 | 中天通信技术有限公司 | End face coupler and optical module |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230104227A1 (en) * | 2021-10-04 | 2023-04-06 | Globalfoundries U.S. Inc. | Edge couplers with confining features |
| US11733458B2 (en) * | 2021-10-04 | 2023-08-22 | Globalfoundries U.S. Inc. | Edge couplers with confining features |
| CN116661060A (en) * | 2023-07-28 | 2023-08-29 | 中天通信技术有限公司 | End face coupler and optical module |
| CN116661060B (en) * | 2023-07-28 | 2023-10-31 | 中天通信技术有限公司 | End face coupler and optical module |
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