CN114624374A - Method for measuring phosphorus content in clean room environment - Google Patents
Method for measuring phosphorus content in clean room environment Download PDFInfo
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- CN114624374A CN114624374A CN202011474438.5A CN202011474438A CN114624374A CN 114624374 A CN114624374 A CN 114624374A CN 202011474438 A CN202011474438 A CN 202011474438A CN 114624374 A CN114624374 A CN 114624374A
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- 229910052698 phosphorus Inorganic materials 0.000 title claims abstract description 95
- 239000011574 phosphorus Substances 0.000 title claims abstract description 95
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000000243 solution Substances 0.000 claims description 55
- 238000009616 inductively coupled plasma Methods 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 8
- 238000000605 extraction Methods 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 41
- 150000002500 ions Chemical class 0.000 description 17
- 238000012360 testing method Methods 0.000 description 9
- 239000000523 sample Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 4
- -1 phosphorus ions Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 150000001450 anions Chemical class 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 150000001793 charged compounds Polymers 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000012086 standard solution Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 239000012491 analyte Substances 0.000 description 1
- 239000000538 analytical sample Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012496 blank sample Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000013558 reference substance Substances 0.000 description 1
- 238000004885 tandem mass spectrometry Methods 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
- G01N30/62—Detectors specially adapted therefor
- G01N30/72—Mass spectrometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
- G01N30/62—Detectors specially adapted therefor
- G01N30/74—Optical detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
- G01N30/88—Integrated analysis systems specially adapted therefor, not covered by a single one of the groups G01N30/04 - G01N30/86
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
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- Spectroscopy & Molecular Physics (AREA)
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Abstract
The invention discloses a method for measuring phosphorus content in a clean room environment, which comprises the following steps: placing the wafer in a clean room environment for a first time period; extracting phosphorus on the surface of the wafer by using an extracting solution; and detecting the phosphorus content in the reacted extracting solution. According to the method for determining the phosphorus content in the clean room environment, provided by the invention, the wafer is placed in the clean room environment for a period of time, then the extracting solution is used for extracting the phosphorus element on the surface of the wafer, and the phosphorus content in the reacted extracting solution is detected, so that the phosphorus content in the clean room environment is determined.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for measuring phosphorus content in a clean room environment.
Background
In the manufacturing process of semiconductor devices, the pollution of metal ions, anions, organic matters and the like can seriously affect the yield, the electrical property and the reliability of integrated circuits, and the pollution in the manufacturing process of the semiconductor is monitored by accurately measuring the content of the pollutants. Generally, an inductively coupled plasma mass spectrometer (ICP-MS) is used for measuring the content of metal ions, an Ion Chromatograph (IC) is used for measuring the content of anions and cations, and a gas chromatograph and mass spectrometer (GC-MS) is used for measuring the content of organic molecules.
In the semiconductor manufacturing process, trace phosphorus element pollution influences the starting voltage of a semiconductor device, so that the product yield is reduced. In conventional analysis, the phosphorus content is usually determined spectrophotometrically, but trace amounts of phosphorus cannot be detected. The ion chromatograph can be used for measuring phosphate ions, but the sensitivity of phosphate ions is relatively low, so that the content of trace phosphorus in a dust-free chamber cannot be accurately measured. The Secondary Ion Mass Spectrometer (SIMS) can be used for measuring the content of the phosphorus element, but the SIMS machine has high cost and low popularity rate, and cannot quickly test the content of the phosphorus element in a clean room.
Therefore, there is a need to provide a method for determining the phosphorus content in a clean room environment to solve the above problems.
Disclosure of Invention
In this summary, concepts in a simplified form are introduced that are further described in the detailed description. The summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The invention provides a method for measuring the phosphorus content in a clean room environment, which comprises the following steps:
placing the wafer in a clean room environment for a first time period;
extracting phosphorus on the surface of the wafer by using an extracting solution;
and detecting the phosphorus content in the reacted extracting solution.
Further, the extracting the phosphorus element on the surface of the wafer by using the extracting solution comprises:
measuring an extraction liquid drop with a preset volume on the surface of the wafer;
the extracting solution stays on the surface of the wafer for a second time;
and (4) obtaining an extracting solution after reaction.
Further, the detecting the phosphorus content in the reacted extract comprises:
establishing a phosphorus content standard curve;
detecting the reacted extracting solution by using a measuring machine, wherein the sample injection time of the reacted extracting solution is a third time;
and obtaining the phosphorus content in the reacted extracting solution.
Further, it is right to utilize the measuring machine platform the extract after the reaction detects, the length of advance a kind of time of extract after the reaction is for the third time, still includes:
the reacted extracting solution sequentially passes through a first mass screener, an eight-grade rod reaction tank and a second mass screener of the measuring machine to obtain a signal response value with the mass number of 47;
obtaining the phosphorus content in the reacted extracting solution according to the signal response value and the phosphorus content standard curve;
and performing unit conversion on the phosphorus content in the reacted extracting solution to obtain the phosphorus concentration on the surface of the wafer.
Further, the extract was purified from 49% HF: 30% H2O2：H2O ═ 2: 1: 2 (volume ratio).
Further, the detecting the phosphorus content in the reacted extract further comprises:
detecting the content of phosphorus in the reacted extracting solution by using an inductively coupled plasma tandem mass spectrometer, wherein the detection limit of phosphorus ions of the inductively coupled plasma tandem mass spectrometer reaches e9 atoms/cm2。
Further, the wafer does not contain phosphorus and is not polluted by phosphorus, and the wafer is vertically placed in the clean room environment.
Further, the first duration ranges from 3h to 24 h.
Further, the second time period ranges from 90s to 120 s.
Further, the third duration is in a range of 80s to 100 s.
According to the method for determining the phosphorus content in the clean room environment, provided by the invention, the wafer is placed in the clean room environment for a period of time, then the extracting solution is used for extracting the phosphorus element on the surface of the wafer, and the phosphorus content in the reacted extracting solution is detected, so that the phosphorus content in the clean room environment is determined.
Drawings
The following drawings of the invention are included to provide a further understanding of the invention. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
In the drawings:
FIG. 1 is a flow chart of a method of determining the phosphorous content in a clean room environment according to an exemplary embodiment of the present invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatial relational terms such as "under," "below," "under," "above," "over," and the like may be used herein for convenience in describing the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In order to provide a thorough understanding of the present invention, detailed steps and detailed structures will be set forth in the following description in order to explain the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
In the semiconductor manufacturing process, trace phosphorus element pollution influences the starting voltage of a semiconductor device, so that the product yield is reduced. Aiming at the problem that trace phosphorus is difficult to detect, the invention provides a method for measuring the content of phosphorus in a clean room environment, as shown in figure 1, which comprises the following steps:
step S101: placing a wafer in a clean room environment for a first time period;
step S102: extracting phosphorus on the surface of the wafer by using an extracting solution;
step S103: and detecting the phosphorus content in the reacted extracting solution.
First, step S101 is performed: the wafer is placed in a clean room environment for a first length of time.
In an exemplary embodiment, the wafer includes a silicon substrate, which may be at least one of the following materials: single crystal silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-on-insulator-silicon-germanium (S-SiGeOI), silicon-on-insulator-silicon-germanium (SiGeOI), and germanium-on-insulator (GeOI), among others. The silicon substrate may be a silicon substrate implanted with P-type impurity ions (e.g., boron), and the specific doping concentration thereof is not limited by the embodiment.
It should be noted that in order to achieve the determination of trace amounts of phosphorus in a clean room environment, the wafers used for testing should be free of phosphorus and not contaminated with phosphorus. Preferably, the wafer used for testing is a brand new wafer.
In an exemplary embodiment, the wafer is placed in the clean room environment in a manner that ensures that the surface of the wafer is in sufficient contact with the air in the clean room to naturally oxidize the surface of the wafer, and the content of phosphorus element in the oxide layer is positively correlated with the content of phosphorus in the clean room environment. Preferably, the wafer is placed vertically in the clean room environment.
In an exemplary embodiment, the wafer is placed in the clean room environment for a time period sufficient to contact the surface of the wafer with the air in the clean room, so that the surface of the wafer is sufficiently oxidized naturally, and the test timeliness and validity are ensured, so that the test result can accurately reflect the phosphorus content of the clean room environment in a certain time period. Preferably, the standing time of the wafer in the clean room environment ranges from 3h to 24 h.
Next, step S102 is performed: extracting phosphorus element on the surface of the wafer by using an extracting solution, wherein the extracting solution comprises the following steps:
measuring an extraction liquid drop with a preset volume on the surface of the wafer;
the extracting solution stays on the surface of the wafer for a second time period;
and (4) obtaining an extracting solution after reaction.
In an exemplary embodiment, the extraction solution is composed of 49% HF: 30% H2O2：H2O is 2: 1: 2 (volume ratio). Compared with the conventional extracting solution or cleaning solution, the extracting solution adopted by the invention has higher HF content, and can fully dissolve the phosphorus element on the surface of the wafer in the extracting solution, thereby accurately measuring the phosphorus element on the surface of the wafer.
In an exemplary embodiment, a liquid transfer device is used to transfer 0.5mL to 1.0mL of extract liquid drops on the surface of the wafer, the extract liquid reacts with the native oxide layer on the surface of the wafer and finally converges into one drop, and the residence time of the extract liquid on the surface of the wafer should be ensured to be sufficient to react with the native oxide layer on the surface of the wafer and should be avoided to be too long, preferably, the residence time of the extract liquid on the surface of the wafer is in a range of 90s to 120 s.
It should be noted that, during the testing process, if there is a step of moving or exposing the wafer, the wafer should be packaged and protected, for example, by using an anti-static bag vacuum to prevent the surface of the wafer from being polluted by contact or environmental pollution.
Next, step S103 is performed: detecting the phosphorus content in the reacted extracting solution, comprising the following steps:
establishing a phosphorus content standard curve;
detecting the reacted extracting solution by using a measuring machine, wherein the sample injection time of the reacted extracting solution is a third time;
and obtaining the phosphorus content in the reacted extracting solution.
In the manufacturing process of semiconductor devices, an inductively coupled plasma mass spectrometer (ICP-MS) is generally used to determine the content of metal ions, an Ion Chromatograph (IC) is used to determine the content of anions and cations, and a gas chromatograph and mass spectrometer (GC-MS) is used to determine the content of organic molecules. However, in conventional analysis, the phosphorus content is usually determined spectrophotometrically, but trace amounts of phosphorus cannot be detected; a traditional inductively coupled plasma mass spectrometer (ICP-MS) can be used for accurately measuring most elements, but phosphorus element has higher ionization energy (10.49eV), the ionization degree is lower in argon plasma, and polyatomic ions in a silicon-rich matrix30SiH+Will be aligned with31P+Interference is formed, making its detection capability poor. Ion Chromatography (IC) can be used for the determination of phosphate ions, but the sensitivity of phosphate is relatively low, which results in the inability to accurately determine the content of trace phosphorus in a clean room. The Secondary Ion Mass Spectrometer (SIMS) can be used for measuring the content of the phosphorus element, but the SIMS has high cost and low popularity rate, and cannot rapidly test the content of the phosphorus element in a clean room.
Therefore, in the exemplary embodiment, the phosphorus content in the extract after the reaction was detected using an inductively coupled plasma tandem mass spectrometer (ICP-MS/MS). An inductively coupled plasma tandem mass spectrometer (ICP-MS/MS) consists of an ICP (sample introduction system, ion source), an interface device (sampling cone, skimmer cone) and a two-stage mass spectrometer (ion focusing system, quadrupole filter, ion detector). The working process of the inductively coupled plasma tandem mass spectrometer (ICP-MS/MS) comprises the following steps: (1) the analytical sample is introduced into the argon gas stream, usually in the form of an aerosol of an aqueous solution, and then enters the central zone of the argon plasma at atmospheric pressure, excited by radiofrequency energy; (2) the high temperature of the plasma desolvates, vaporizes, dissociates, and ionizes the sample; (3) part of the plasma enters the vacuum system through different pressure areas, and is positive in the vacuum systemThe ions are pulled out and separated according to the mass-to-charge ratio thereof; (4) the detector converts ions into electronic pulses, which are then counted by an integral measurement line; (5) the size of the electronic pulse is related to the concentration of analyte ions in the sample, and the trace element quantitative analysis of an unknown sample is realized by comparing with a known standard or reference substance. In an exemplary embodiment, the inductively coupled plasma tandem mass spectrometer (ICP-MS/MS) has a phosphorus ion detection limit of e9atoms/cm2。
Compared with a traditional inductively coupled plasma mass spectrometer (ICP-MS), the inductively coupled plasma tandem mass spectrometer (ICP-MS) is additionally provided with a four-level rod mass screener (Q1) in front of an eight-level rod reaction tank system (ORS), only ions with specific mass numbers can enter the eight-level rod reaction tank system (ORS) through the four-level rod mass screener (Q1) to react with reaction gas, generated ions with target mass numbers enter the four-level rod mass screener (Q2), interference caused by matrix ions and other polyatomic ions is eliminated, and therefore the phosphorus content is accurately measured.
Before detecting the phosphorus content in the reacted extracting solution by using an inductively coupled plasma tandem mass spectrometer (ICP-MS/MS), the inductively coupled plasma tandem mass spectrometer (ICP-MS/MS) is firstly debugged.
Exemplarily, the detecting the reacted extracting solution by using a measuring machine, wherein the sampling duration of the reacted extracting solution is a third duration, and the detecting method further includes:
the reacted extracting solution sequentially passes through a first quality screening device (Q1), an eight-grade rod reaction tank and a second quality screening device (Q2) of the measuring machine table to obtain a signal response value with the mass number of 47;
obtaining the phosphorus content in the reacted extracting solution according to the signal response value and the phosphorus content standard curve;
and performing unit conversion on the phosphorus content in the reacted extracting solution to obtain the phosphorus concentration on the surface of the wafer.
In one embodiment, the ICP-MS/MS phosphorus testing method is debugged, and the MS/MS mode is selected to be O2As reaction gases, P and O2Reaction production31P16O+Q1 set to 31 and Q2 set to 47, eliminates ions of other mass numbers (e.g.,28Si19F+、30Si16OH+、47Ti+etc.), only ions of mass number 31 (e.g.,30SiH+and31p +) through Q1 into an eight-stage rod reaction cell (ORS), but SiH is not bound to O2The reaction occurs, so that the test interference of the SiH polyatomic ions on the P element can be eliminated.
In an exemplary embodiment, establishing the phosphorus content standard curve includes: with an extract (49% HF: 30% H)2O2：H2O is 2: 1: 2 (volume ratio)) as a matrix solution, adding a phosphorus element standard solution, respectively preparing phosphorus standard solutions with phosphorus contents of 0 mu g/L (blank sample), 0.5 mu g/L, 1 mu g/L, 2 mu g/L, 5 mu g/L and 10 mu g/L, and establishing a phosphorus standard curve by an inductively coupled plasma tandem mass spectrometer (ICP-MS/MS) by adopting a standard addition method.
In an exemplary embodiment, the reacted extracting solution is added into an inductively coupled plasma tandem mass spectrometer (ICP-MS/MS) for measurement, the time for measuring the reacted extracting solution in the inductively coupled plasma tandem mass spectrometer (ICP-MS/MS) should ensure that phosphorus ions in the reacted extracting solution can be sufficiently dissolved and cannot be polluted by an external environment, preferably, the sample injection time is in a range of 80s to 100s, and the sample injection time is a time for absorbing the reacted extracting solution into the measuring machine.
According to the method for determining the phosphorus content in the environment of the dust free room, provided by the invention, the wafer is placed in the environment of the dust free room for a period of time, then the extracting solution is used for extracting the phosphorus element on the surface of the wafer, and the phosphorus content in the reacted extracting solution is detected, so that the phosphorus content in the environment of the dust free room is determined
The present invention has been illustrated by the above embodiments, but it should be understood that the above embodiments are for illustrative and descriptive purposes only and are not intended to limit the invention to the scope of the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that many variations and modifications may be made in accordance with the teachings of the present invention, which variations and modifications are within the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. A method of determining the amount of phosphorus in a clean room environment, comprising:
placing the wafer in a clean room environment for a first time period;
extracting phosphorus on the surface of the wafer by using an extracting solution;
and detecting the phosphorus content in the reacted extracting solution.
2. The method of claim 1, wherein the extracting phosphorus from the surface of the wafer with the extracting solution comprises:
measuring an extraction liquid drop with a preset volume on the surface of the wafer;
the extracting solution stays on the surface of the wafer for a second time;
and (4) obtaining an extracting solution after reaction.
3. The method of claim 1, wherein said detecting the phosphorus content of the reacted extract comprises:
establishing a phosphorus content standard curve;
detecting the reacted extracting solution by using a measuring machine, wherein the sample injection time of the reacted extracting solution is a third time;
and obtaining the phosphorus content in the reacted extracting solution.
4. The method of claim 3, wherein the detecting the reacted extract with a measuring machine, the sample feeding time of the reacted extract being a third time period, further comprises:
the reacted extracting solution sequentially passes through a first mass screener, an eight-grade rod reaction tank and a second mass screener of the measuring machine to obtain a signal response value with the mass number of 47;
obtaining the phosphorus content in the reacted extracting solution according to the signal response value and the phosphorus content standard curve;
and performing unit conversion on the phosphorus content in the reacted extracting solution to obtain the phosphorus concentration on the surface of the wafer.
5. The method of claim 1, wherein the extraction solution is prepared from 49% HF: 30% H2O2：H2O is 2: 1: 2 (volume ratio).
6. The method of claim 1, wherein said detecting the phosphorus content of the reacted extract further comprises:
detecting the content of phosphorus in the reacted extracting solution by using an inductively coupled plasma tandem mass spectrometer, wherein the phosphorus ion detection limit of the inductively coupled plasma tandem mass spectrometer reaches e9atoms/cm2。
7. The method of claim 1, wherein the wafer is free of elemental phosphorus and is uncontaminated by elemental phosphorus, and wherein the wafer is positioned vertically in the clean room environment.
8. The method of claim 1, wherein the first duration ranges from 3h to 24 h.
9. The method of claim 2, wherein the second length of time ranges from 90s to 120 s.
10. A method according to claim 3, wherein the third period of time is in the range 80s-100 s.
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| CN203811542U (en) * | 2014-04-22 | 2014-09-03 | 龙钜超洁净科技（苏州）有限公司 | Fluorescence testing device for phosphorus content of dust-free cloth |
| CN111916364A (en) * | 2019-05-09 | 2020-11-10 | 无锡华润上华科技有限公司 | Method for detecting metal content of film layer on surface of wafer |
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