CN114614669B - Power supply configuration scheme capable of reducing overall power consumption and cost of driving chip of EML laser - Google Patents
Power supply configuration scheme capable of reducing overall power consumption and cost of driving chip of EML laser Download PDFInfo
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- CN114614669B CN114614669B CN202210270886.6A CN202210270886A CN114614669B CN 114614669 B CN114614669 B CN 114614669B CN 202210270886 A CN202210270886 A CN 202210270886A CN 114614669 B CN114614669 B CN 114614669B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/157—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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Abstract
The invention discloses a power supply configuration scheme capable of reducing the overall power consumption and cost of an EML (electro-magnetic logic) laser driving chip, belongs to the field of optical communication integrated circuits, and aims to solve the problem that the cost and the power consumption cannot be balanced in the conventional power supply configuration scheme of the EML laser driving chip. The DC/DC module, the resistor R3 and the resistor R4 are arranged in the EML laser driving chip; the output end VOUT of the DC/DC module is simultaneously connected with one end of the resistor R3, an EML laser driving chip pin CAP and a 1.8V direct-current power supply; the other end of the resistor R3 is simultaneously connected with one end of the resistor R4 and a feedback signal end FB of the DC/DC module; a switch input port SW of the DC/DC module is connected with one end of an inductor L1 through an EML laser driving chip pin SW; a power supply voltage port VCC of the DC/DC module is simultaneously connected with an EML laser driving chip pin EN, one end of a capacitor C2, the other end of an inductor L1 and the anode of a 3.3V direct-current power supply through an EML laser driving chip pin VCC; the negative electrode of the 3.3V direct-current power supply is grounded; the other end of the capacitor C2 is grounded; the enable port EN is connected to the chip pin EN.
Description
Technical Field
The invention relates to a power supply configuration scheme of an EML (External Modulated Laser) Laser driving chip, belonging to the field of optical communication integrated circuits.
Background
In an optical fiber communication integrated circuit, a TIA trans-impedance amplifier is responsible for converting a received weak optical signal into an electric signal, and a receiving end RX amplifies the electric signal with a medium amplitude to limit the amplitude of the signal, so that the signal identification degree is enhanced. The transmitting terminal TX transmits optical information from a long distance by passing a data stream of electrical signals through a LDD Laser Driver (Laser Diode Driver) to drive the Laser to emit and extinguish. RX and TX have now been integrated on a single silicon wafer as a Transceiver chip (Transceiver). Nowadays, low power consumption becomes a development trend of a transceiver chip and an EML laser driving chip, and thus, various power supply configuration schemes are derived.
Fig. 1 shows a conventional EML laser driver chip with an external LDO (Low Dropout Regulator) power supply scheme. According to the electric power consumption formula P = UI, the electric power consumption can be reduced by lowering the power supply voltage U or by reducing the consumption current I. In order to reduce the overall power consumption of the EML laser driving chip, the voltage of a power supply VCC is reduced to 1.8V from 3.3V, and the power consumption can be reduced to 55% under the condition that the consumed current is not changed. Therefore, reducing the conventional power supply voltage of 3.3V to 1.8V is a key to achieving reduced power consumption. In fig. 1, an LDO low dropout regulator is added outside the EML laser driver chip to reduce the voltage of 3.3V to 1.8V, which is supplied to the power supply terminal VCC of the EML laser driver chip.
An output adjusting tube MP of the LDO is always in an open state, under the condition that the load current is changed, the grid voltage of the MP is adjusted through feedback, the output current is changed, the internal resistance of the MP always exists, and another expression P = I of the electric power consumption 2 R, it can be seen that the larger the current output by the MP is, the larger the internal resistance is, and the more the power consumption is consumed by the MP. Therefore, although the LDO can achieve the effect of converting 3.3V to 1.8V, it is not favorable for reducing the overall power consumption of the EML laser driving chip.
In order to solve the problem of power consumption of the regulating tube MP of the LDO, the external LDO can be replaced by DC/DC with higher efficiency, as shown in FIG. 2.
In practical applications, the external LDO is used due to the internal resistance of the tuning pipe MP itself. A lot of unnecessary power consumptions are generated, the LDO is replaced by the DC/DC, the whole power consumption can be reduced, but another problem needing balance exists, the price of a single DC/DC is far higher than that of a single LDO, the hardware cost is invisibly increased in 1 RMB, and the packaged DC/DC occupies a certain volume on a PCB board and is not beneficial to layout and wiring of the high-speed PCB board.
Therefore, in view of the above disadvantages, it is desirable to provide a technique capable of balancing hardware cost and power consumption, so that the overall power consumption can be reduced without greatly increasing the hardware cost.
Disclosure of Invention
Aiming at the problem that the existing power supply configuration scheme of the driving chip of the EML laser cannot balance the cost and the power consumption, the invention provides the power supply configuration scheme which can reduce the overall power consumption and the cost of the driving chip of the EML laser.
The power supply configuration scheme capable of reducing the overall power consumption and cost of the driving chip of the EML laser comprises a 3.3V direct-current power supply, a DC/DC module, a resistor R3, a resistor R4, an inductor L1, capacitors C1 and C2;
the DC/DC module, the resistor R3 and the resistor R4 are arranged in the EML laser driving chip;
the output end VOUT of the DC/DC module is simultaneously connected with one end of the resistor R3, an EML laser driving chip pin CAP and a 1.8V direct-current power supply;
the other end of the resistor R3 is simultaneously connected with one end of the resistor R4 and a feedback signal end FB of the DC/DC module;
the other end of the resistor R4 is connected with the ground;
a switch input port SW of the DC/DC module is connected with one end of an inductor L1 through an EML laser driving chip pin SW;
a power supply voltage port VCC of the DC/DC module is simultaneously connected with an EML laser driving chip pin EN, one end of a capacitor C2, the other end of an inductor L1 and the anode of a 3.3V direct-current power supply through an EML laser driving chip pin VCC; the negative electrode of the 3.3V direct-current power supply is grounded; the other end of the capacitor C2 is grounded;
the enable port EN is connected to the chip pin EN.
Preferably, the DC/DC module is constructed in the EML laser driving chip, and the reference voltage of the DC/DC module is uniformly provided by a band-gap reference voltage module in the EML laser driving chip; the sawtooth oscillator of the DC/DC module is replaced by the existing oscillator in the EML laser driving chip; and the size of a switching tube SW of the DC/DC module is designed according to the integral power consumption index of the driving chip of the EML laser.
The invention has the beneficial effects that: the power supply configuration scheme of the invention abandons the traditional configuration scheme that the external LDO reduces 3.3V to 1.8V and supplies power to the EML laser driving chip, and also abandons the traditional configuration scheme that the external DC/DC reduces 3.3V to 1.8V and supplies power to the EML laser driving chip. A DC/DC is designed to be built in the driving chip of the EML laser according to the power consumption demand of the driving chip of the EML laser, and the customized DC/DC has the characteristics of small area and strong performance. So that the cost and power consumption of the whole module are reduced. Has passed the actual test verification.
Drawings
Fig. 1 is a conventional EML laser driver chip employing an external LDO power supply configuration scheme;
fig. 2 is a conventional EML laser driving chip employing an external DC/DC power supply configuration scheme;
FIG. 3 is a general overall functional block diagram of DC/DC;
fig. 4 is a schematic diagram of a power supply configuration scheme capable of reducing the overall power consumption and cost of an EML laser driver chip according to the present invention.
Fig. 5 is a schematic diagram of a transceiver chip to which the technical gist of the present invention is applied.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
The first embodiment is as follows: in the following description of the embodiment with reference to fig. 1 to 4, in a power supply configuration scheme illustrating a conventional EML laser driver chip, an external power supply converts a 3.3V voltage into a 1.8V voltage through an LDO to become a power supply voltage of the EML laser driver chip, because of the problem of adjusting the internal resistance of the tube MP, additional power consumption is generated, which causes a problem that the electrical efficiency is reduced by about 40%, and the overall power consumption is increased. In order to solve the problem, engineers replace the LDO of the external power supply with DCDC, because the switching tube SW of DCDC has only two states, i.e., on and off, compared with the adjusting tube MP, the internal resistance is very small when on, and the extra power consumption is also small; when the driving chip is closed, no current flows through the SW, and the extra power consumption is zero, so that the electrical efficiency of the DCDC can reach more than 80%, and the whole power consumption of the driving chip of the EML laser is greatly reduced. However, the cost of using a single DCDC is too high, the volume of the DCDC occupies a certain area of the PCB, and the DCDC is not favorable for layout and wiring of high-speed signal wiring.
In the power supply configuration scheme of this embodiment, the power consumption and the cost of the driving chip of the EML laser can be reduced, which is referred to as the power supply configuration scheme shown in fig. 4. External DC/DC is transplanted into the driving chip of the EML laser, the traditional single DC chopper DC/DC module is not adopted, the driving chip of the EML laser is built, and the inductor L1, the capacitor C1 and the capacitor C2 which are low in price and large in occupied area are placed outside the driving chip of the EML laser. The specific scheme is as follows: the DC/DC power supply comprises a 3.3V DC power supply, a DC/DC module, a resistor R3, a resistor R4, an inductor L1, and capacitors C1 and C2;
the DC/DC module, the resistor R3 and the resistor R4 are arranged in the EML laser driving chip;
the output end VOUT of the DC/DC module is simultaneously connected with one end of the resistor R3, an EML laser driving chip pin CAP and a 1.8V direct-current power supply;
the other end of the resistor R3 is simultaneously connected with one end of the resistor R4 and a feedback signal end FB of the DC/DC module;
the other end of the resistor R4 is connected with the ground;
a switch input port SW of the DC/DC module is connected with one end of an inductor L1 through an EML laser driving chip pin SW;
a power supply voltage port VCC of the DC/DC module is simultaneously connected with an EML laser driving chip pin EN, one end of a capacitor C2, the other end of an inductor L1 and the anode of a 3.3V direct-current power supply through an EML laser driving chip pin VCC; the negative electrode of the 3.3V direct-current power supply is grounded; the other end of the capacitor C2 is grounded;
the enable port EN is connected to the chip pin EN.
Referring to fig. 3, which is a schematic block diagram of a conventional DC/DC converter, the present embodiment needs to be further optimized in terms of area when a DC/DC unit is built inside the EML laser driver chip rFor example, the generation of the reference voltage of the DC/DC unit can be uniformly provided by a band-gap reference voltage module in the EML laser driving chip, the sawtooth oscillator of the DC/DC unit can also be replaced by other oscillators in the EML laser driving chip, and the switching tube SW of the DC/DC unit occupying the largest chip layout area can reasonably design the size of the EML laser driving chip according to the overall required power consumption of the EML laser driving chip, and the area of the DC/DC module is only 0.7mm through area optimization in all aspects 2 And the floor area of a single DCDC is 4mm 2 It can be seen that the method of constructing the DC/DC module in the EML laser driving chip can greatly reduce the floor space.
The output voltage can be changed by adjusting the resistance values of the resistors R3 and R4. The adjustment modes include laser trimming and fuse trimming, one Time Programmable (OTP) and register programming.
The power supply configuration scheme capable of reducing the overall power consumption and cost of the driving chip of the EML laser is characterized in that an external DCDC is embedded into the chip, and the structural area is optimized. Finally, the substantial result of cost reduction and total area reduction is obtained.
The second embodiment is as follows: the following describes the present embodiment with reference to fig. 5, and the same effects are obtained when the technical gist of the present application is applied to the optical Transceiver chip transmitter.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that features described in different dependent claims and herein may be combined in ways different from those described in the original claims. It is also to be understood that features described in connection with individual embodiments may be used in other described embodiments.
Claims (1)
1. A power supply configuration method capable of reducing the overall power consumption and cost of an EML laser driving chip is characterized by comprising a 3.3V direct-current power supply, a DC/DC module, a resistor R3, a resistor R4, an inductor L1, capacitors C1 and C2;
transplanting the DC/DC module into the driving chip of the EML laser from the outside of the chip, and simultaneously keeping the inductor L1 and the capacitors C1 and C2 which occupy a large area outside the driving chip of the EML laser;
the DC/DC module establishes a rule in an EML laser driving chip: the reference voltage of the DC/DC module is uniformly provided by a band-gap reference voltage module in the driving chip of the EML laser; the sawtooth oscillator of the DC/DC module is replaced by the existing oscillator in the EML laser driving chip; the switch tube SW of the DC/DC module is designed into a size according to the overall power consumption index of the driving chip of the EML laser;
the DC/DC module, the resistor R3 and the resistor R4 are arranged in the EML laser driving chip;
the output end VOUT of the DC/DC module is simultaneously connected with one end of the resistor R3, an EML laser driving chip pin CAP and a 1.8V direct-current power supply;
the other end of the resistor R3 is simultaneously connected with one end of the resistor R4 and a feedback signal end FB of the DC/DC module;
the other end of the resistor R4 is connected with the ground;
a switch input port SW of the DC/DC module is connected with one end of an inductor L1 through an EML laser driving chip pin SW;
a power supply voltage port VCC of the DC/DC module is simultaneously connected with an EML laser driving chip pin EN, one end of a capacitor C2, the other end of an inductor L1 and the anode of a 3.3V direct-current power supply through an EML laser driving chip pin VCC; the negative electrode of the 3.3V direct-current power supply is grounded; the other end of the capacitor C2 is grounded;
the enable port EN is connected to the chip pin EN.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210270886.6A CN114614669B (en) | 2022-03-18 | 2022-03-18 | Power supply configuration scheme capable of reducing overall power consumption and cost of driving chip of EML laser |
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| CN202210270886.6A CN114614669B (en) | 2022-03-18 | 2022-03-18 | Power supply configuration scheme capable of reducing overall power consumption and cost of driving chip of EML laser |
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| CN114614669B true CN114614669B (en) | 2022-12-06 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104202092A (en) * | 2014-09-18 | 2014-12-10 | 长芯盛（武汉）科技有限公司 | Receiving, transmitting and controlling three-in-one chip applicable to SFP (small form-factor pluggable) + high-speed photoelectric communication |
| CN107306157A (en) * | 2016-04-20 | 2017-10-31 | 成都芯瑞科技股份有限公司 | The SFF LVDS level of 155M super low-power consumptions technical grade 2 × 5 compatibility optical module |
| EP3247056A1 (en) * | 2016-05-18 | 2017-11-22 | Hisense Broadband Multimedia Technologies Co., Ltd. | Optical module and optical line terminal device |
| CN213461766U (en) * | 2020-12-21 | 2021-06-15 | 四川华拓光通信股份有限公司 | CSFP optical module circuit structure with low power consumption |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106921439A (en) * | 2015-12-25 | 2017-07-04 | 青岛海信宽带多媒体技术有限公司 | A kind of optical module |
| CN109326956A (en) * | 2018-11-19 | 2019-02-12 | 深圳市大族锐波传感科技有限公司 | A kind of laser driving system and semiconductor laser module |
| CN212086210U (en) * | 2020-07-02 | 2020-12-04 | 东莞铭普光磁股份有限公司 | Take transmission drive circuit and optical module of control by temperature change |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104202092A (en) * | 2014-09-18 | 2014-12-10 | 长芯盛（武汉）科技有限公司 | Receiving, transmitting and controlling three-in-one chip applicable to SFP (small form-factor pluggable) + high-speed photoelectric communication |
| CN107306157A (en) * | 2016-04-20 | 2017-10-31 | 成都芯瑞科技股份有限公司 | The SFF LVDS level of 155M super low-power consumptions technical grade 2 × 5 compatibility optical module |
| EP3247056A1 (en) * | 2016-05-18 | 2017-11-22 | Hisense Broadband Multimedia Technologies Co., Ltd. | Optical module and optical line terminal device |
| CN213461766U (en) * | 2020-12-21 | 2021-06-15 | 四川华拓光通信股份有限公司 | CSFP optical module circuit structure with low power consumption |
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