CN114613726A - Method for processing wafer - Google Patents

Method for processing wafer Download PDF

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Publication number
CN114613726A
CN114613726A CN202011415839.3A CN202011415839A CN114613726A CN 114613726 A CN114613726 A CN 114613726A CN 202011415839 A CN202011415839 A CN 202011415839A CN 114613726 A CN114613726 A CN 114613726A
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CN
China
Prior art keywords
wafer
annular reinforcing
protective member
reinforcing portion
device region
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Pending
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CN202011415839.3A
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Chinese (zh)
Inventor
关家一马
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Disco Corp
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Disco Corp
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Publication date
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Priority to CN202011415839.3A priority Critical patent/CN114613726A/en
Publication of CN114613726A publication Critical patent/CN114613726A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B24B27/0675—Grinders for cutting-off methods therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
    • B24B47/12—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces by mechanical gearing or electric power
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0064—Devices for the automatic drive or the program control of the machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention provides a wafer processing method, which can remove an annular reinforcing part without causing processing load to a device region. The wafer processing method comprises the following steps: a protective member attaching step of attaching a protective member having an area covering the front surface or the back surface of the wafer to the wafer; and an annular reinforcing part removing step of removing the annular reinforcing part of the wafer after the protective member attaching step is performed. The annular reinforcing part removing step includes: a ring-shaped reinforcing part separating step of separating the device region from the ring-shaped reinforcing part by dividing the wafer along the outer periphery of the device region; and a removing step of processing and removing the annular reinforcing part by using a grinding tool while supplying processing water to the wafer after the annular reinforcing part separating step is performed.

Description

Method for processing wafer
Technical Field
The present invention relates to a method for processing a wafer.
Background
A wafer having a plurality of devices such as ICs and LSIs formed on the front surface side thereof is divided into chips each having a device by using a dicing apparatus or the like. In order to reduce the size and weight of various electronic devices in which chips are incorporated, the back surface of a wafer before division is ground to a thickness of, for example, 20 to 100 μm.
Since a wafer formed thinner by grinding of the back surface has low rigidity and is liable to warp greatly, it is difficult to handle and transport the wafer in a subsequent step such as covering the back surface with a metal film of gold, silver, titanium or the like having a thickness of about several tens of nm, or forming a through hole in an electrode portion constituting a device. In the so-called TAIKO (registered trademark) grinding designed to solve this problem, a processing method in which only the back surface of the device region is ground to be thin and the outer peripheral portion is left as an annular reinforcing portion can suppress the warpage of the wafer formed to be thin and carry the wafer. In the dividing step of dividing the wafer subjected to the TAIKO grinding into chips, a thick annular reinforcing portion remaining on the outer periphery is not necessary. Therefore, a processing method and a processing apparatus are provided in which the annular reinforcing portion is cut in an annular shape on the inner periphery of the annular reinforcing portion and removed.
Patent document 1: japanese patent No. 5048379
Patent document 2: japanese patent No. 5523033
Patent document 3: japanese laid-open patent publication No. 2007-019379
Patent document 4: japanese laid-open patent publication No. 2007-266352
However, since the removal step of removing the annular reinforcing portion having a thickness of less than 1mm from the dicing tape requires a very detailed operation, the removal may take time, or the annular reinforcing portion may be broken to damage the device. Further, there has been proposed a method of removing all or a convex portion of the annular reinforcing portion by cutting with a cutting tool or grinding with a grinding wheel, but there is a possibility that a notch or a crack due to a load generated in the removal processing may progress to the device region.
Disclosure of Invention
Accordingly, an object of the present invention is to provide a wafer processing method capable of removing an annular reinforcing portion without causing a processing load to a device region.
According to the present invention, there is provided a method of processing a wafer having on a front surface: a device region in which devices are formed in a plurality of regions partitioned by a plurality of intersecting streets; and an outer periphery surplus region surrounding the device region, the wafer having a circular recess formed by grinding on a back surface side of the wafer corresponding to the device region, and having an annular reinforcing portion along an outer periphery of the circular recess, wherein the processing method of the wafer has the steps of: a protective member attaching step of attaching a protective member having an area covering the front surface or the back surface of the wafer to the wafer; and an annular reinforcing part removing step of removing the annular reinforcing part of the wafer after the protective member attaching step is performed, the annular reinforcing part removing step including the steps of: a ring-shaped reinforcing portion separating step of separating the device region from the ring-shaped reinforcing portion by dividing the wafer along the outer periphery of the device region; and a removing step of removing the annular reinforcing part by using a grinder while supplying processing water to the wafer after the annular reinforcing part separating step is performed.
Preferably, in the removing step, the annular reinforcing portion is removed by grinding using a grinding wheel attached to a lower end of a spindle having a rotation axis perpendicular to a holding surface of a chuck table holding the wafer.
Alternatively, in the removing step, the annular reinforcing portion is cut and removed by using a cutting tool attached to a tip of a spindle having a rotation axis parallel to a holding surface of a chuck table holding the wafer.
Preferably, the annular reinforcing portion separating step is performed using a cutting tool or a laser beam.
Preferably, in the protective member attaching step, an outer peripheral edge of the protective member covering the front surface or the back surface of the wafer is attached to the ring frame, and a frame unit in which the wafer is attached to the protective member in the opening of the ring frame is formed.
According to the present invention, the annular reinforcing portion can be removed without causing a processing load to the device region.
Drawings
Fig. 1 is a perspective view showing an example of a wafer to be processed according to the wafer processing method of the embodiment.
Fig. 2 is a perspective view showing the back side of the wafer shown in fig. 1.
Fig. 3 is a flowchart showing a flow of a wafer processing method according to the embodiment.
Fig. 4 is a flowchart showing a flow of the annular reinforcing portion removing step shown in fig. 3.
Fig. 5 is a perspective view showing an example of the back grinding step shown in fig. 3.
Fig. 6 is a perspective view showing the back side of the wafer 10 on which the annular reinforcing portion is formed after the back grinding step of fig. 5.
Fig. 7 is a perspective view showing a first example of the frame unit after the protective member attaching step shown in fig. 3.
Fig. 8 is a sectional view of the frame unit of the first example shown in fig. 7.
Fig. 9 is a sectional view showing a second example of the frame unit after the protective member attaching step shown in fig. 3.
Fig. 10 is a side view partially in section showing a first example of the annular reinforcing portion separating step shown in fig. 4.
Fig. 11 is a side view showing a second example of the annular reinforcing part separating step shown in fig. 4 in a partial cross section.
Fig. 12 is a side view showing a third example of the annular reinforcing portion separating step shown in fig. 4 in partial section.
Fig. 13 is a side view showing a fourth example of the annular reinforcing part separating step shown in fig. 4 in a partial cross section.
Fig. 14 is a side view partially in section showing a first example of the removing step shown in fig. 4.
Fig. 15 is a side view showing a second example of the removing step shown in fig. 4 in partial section.
Fig. 16 is a side view showing a third example of the removing step shown in fig. 4 in partial section.
Fig. 17 is a side view showing a fourth example of the removing step shown in fig. 4 in partial section.
Fig. 18 is a side view showing a fifth example of the removing step shown in fig. 4 in partial section.
Description of the reference symbols
1. 1-2: a frame unit; 10: a wafer; 11: a substrate; 12: a front side; 13: a spacing channel; 14: a device; 15: a device region; 16: a peripheral residual region; 17: a recess; 18: a chip; 19: a back side; 20: a recess; 21: an annular reinforcing portion; 30: a protective member for grinding; 31: a protective member; 32: an annular frame; 40: a grinding unit; 41. 52, 72: a main shaft; 42: a grinding wheel; 43: an abrasive article; 45. 55, 65, 75: a chuck table; 46. 56, 66, 76: a holding surface; 50. 70: a cutting unit; 51. 71: a cutting tool; 60: a laser beam irradiation unit; 61: a laser light.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. The components described below include components that can be easily conceived by those skilled in the art, and substantially the same components. The following structures can be combined as appropriate. Various omissions, substitutions, and changes in the structure can be made without departing from the spirit of the invention.
A method for processing a wafer 10 according to an embodiment of the present invention will be described with reference to the drawings. First, the structure of the wafer 10 to be processed according to the embodiment will be described. Fig. 1 is a perspective view showing an example of a wafer 10 to be processed, which is a wafer processing method according to an embodiment. Fig. 2 is a perspective view showing the back surface 19 side of the wafer 10 shown in fig. 1.
As shown in FIG. 1, a wafer 10 is made of silicon (Si) or sapphire (Al)2O3) And a wafer such as a disc-shaped semiconductor wafer or an optical device wafer having a substrate 11 made of gallium arsenide (GaAs) or silicon carbide (SiC). Wafer with a plurality of chipsThe device 10 includes a plurality of streets 13 (planned dividing lines) formed on the front surface 12 of the substrate 11 and devices 14 formed in each region defined by the plurality of streets 13 crossing in a lattice shape.
A device region 15 and a peripheral remainder region 16 are formed on the front side 12 of the wafer 10. The device region 15 indicates a region where the devices 14 are formed and the streets 13 are set. The device region 15 is located in the center of the substrate 11. The outer peripheral residual region 16 indicates a region where the device 14 is not formed and the streets 13 are not set. The peripheral remainder region 16 surrounds the device region 15. In fig. 1, the boundary between the device region 15 and the outer peripheral surplus region 16 is shown by a broken line for convenience, but actually, no line exists at the boundary. A notch 17 showing the crystal orientation of the wafer 10 is formed in the outer peripheral edge of the wafer 10. The wafer 10 is divided into chips 18 by being along the streets 13. As shown in fig. 2, a surface of the wafer 10 opposite to the front surface 12 on which the devices 14 are formed is a back surface 19.
Next, a method of processing the wafer 10 according to the embodiment will be described. Fig. 3 is a flowchart showing a flow of a method for processing the wafer 10 according to the embodiment. Fig. 4 is a flowchart showing the flow of the annular reinforced part removing step ST4 shown in fig. 3. The processing method of the wafer 10 includes a grinding protective member attaching step ST1, a back grinding step ST2, a protective member attaching step ST3, and a ring-shaped reinforcing part removing step ST 4. The annular reinforced part removing step ST4 includes an annular reinforced part separating step ST41 and a removing step ST 42. Between the back grinding step ST2 and the protective member attaching step ST3, for example, a step of covering the back surface 19 with a metal film made of gold, silver, titanium, or the like, a step of forming a through hole in an electrode portion constituting the device 14, or the like is included. After the ring-shaped reinforcement portion removing step ST4, a dividing step of dividing the wafer 10 along the streets 13 to form the chips 18 is included.
The grinding protective member attaching step ST1 is a step of attaching the grinding protective member 30 to the front surface 12 side of the wafer 10 in advance as shown in fig. 1 and 2 before the grinding unit 40 grinds the rear surface 19 of the wafer 10. When the back surface 19 side of the wafer 10 is ground by the grinding unit 40, the grinding protective member 30 protects the devices 14 on the front surface 12 side of the wafer 10 held on the chuck table 45 from being damaged by adhesion or contact of foreign matter. The grinding protective member 30 is a disk-shaped belt having the same shape as the wafer 10 in the embodiment. The grinding protector 30 includes, for example, a base material layer made of a synthetic resin and a paste layer laminated on at least any one of the front surface and the rear surface of the base material layer.
Fig. 5 is a perspective view showing an example of the back grinding step ST2 shown in fig. 3. Fig. 6 is a perspective view showing the back surface 19 side of the wafer 10 on which the annular reinforcing part 21 is formed after the back surface grinding step ST2 of fig. 5. As shown in fig. 5 and 6, the back grinding step ST2 is a step of grinding a region of the back surface 19 of the wafer 10 corresponding to the device region 15 to a predetermined thickness to form a concave portion 20 and form an annular reinforcing portion 21 along the outer periphery of the concave portion 20. That is, the back grinding step ST2 is a step of grinding the wafer 10 from the back surface 19 side by TAIKO (registered trademark). In the present invention, the region of the back surface 19 of the wafer 10 corresponding to the device region 15 is a region of the back surface 19 of the wafer 10 that overlaps with the device region 15 of the front surface 12 in the thickness direction of the wafer 10.
In the back grinding step ST2, a region of the back surface 19 of the wafer 10 corresponding to the device region 15 is ground by the grinding unit 40. The grinding unit 40 includes a spindle 41 as a rotation axis, a grinding wheel 42 attached to a lower end of the spindle 41, a grindstone 43 attached to a lower surface of the grinding wheel 42, and a rotatable chuck table 45. The spindle 41 and the grinding wheel 42 have a rotation axis perpendicular to a holding surface 46 of a chuck table 45 holding a wafer 10 to be ground (or parallel to the axial center of the chuck table 45).
In the back grinding step ST2, first, as shown in fig. 5, the front surface 12 side of the wafer 10 is sucked and held on the holding surface 46 of the chuck table 45 of the grinding unit 40 via the grinding pad 30. In the back grinding step ST2, the grinding wheel 42 is then rotated about the axis via the spindle 41 while the chuck table 45 is rotated about the axis. In the back grinding step ST2, the grinding wheel 42 is lowered while supplying the machining water to the back surface 19 of the wafer 10 and the grindstone 43, and the rotating grindstone 43 is brought into contact with the back surface 19 of the wafer 10 rotating on the chuck table 45. At this time, the control device or the operator of the grinding unit 40 controls the grindstone 43 of the grinding wheel 42 to be always in contact with the rotation center of the back surface 19 of the wafer 10 and not to be in contact with the region of the wafer 10 corresponding to the outer peripheral surplus region 16. As a result, in the wafer 10, only the region corresponding to the device region 15 of the back surface 19 is ground to form the concave portion 20, and the region corresponding to the outer peripheral surplus region 16 remains to form the annular reinforcing portion 21 having the same thickness as that before the back surface grinding step ST 2.
The recess 20 of the wafer 10 is thinned to about 20 μm to 100 μm, for example. The thickness of the annular reinforcing part 21 is the same as that of the wafer 10 before the back grinding step ST2, and is, for example, about 0.5mm to 1 mm. The width of the annular reinforcing portion 21 is, for example, about 2mm to 8 mm. The annular reinforcing portion 21 can suppress warpage of the wafer 10, and thus contributes to handling and carrying of the wafer 10 in a process before the wafer 10 is divided into the chips 18. After the back grinding step ST2, the grinding protective member 30 is peeled off from the wafer 10 by a known method, and then a predetermined step such as a step of covering the back surface 19 with a metal film made of gold, silver, titanium, or the like, or a step of forming a through hole in an electrode portion constituting the device 14 is performed.
Next, a protective member attaching step ST3 of the embodiment will be described. The protective member attaching step ST3 is a step of attaching the protective member 31 having an area covering the front surface 12 or the back surface 19 of the wafer 10 to the wafer 10. In the protective member attaching step ST3, in the embodiment, the outer peripheral edge of the protective member 31 covering the front surface 12 or the back surface 19 of the wafer 10 is attached to the ring frame 32, and the frame units 1 and 1-2 in which the wafer 10 is supported at the opening of the ring frame 32 are formed. In the following description, a first example and a second example of the protective member attaching step ST3 will be described.
Fig. 7 is a perspective view showing a first example of the frame unit 1 after the protective member attaching step ST3 shown in fig. 3. Fig. 8 is a sectional view of the frame unit 1 of the first example shown in fig. 7. In the protective member attaching step ST3 of the first example shown in fig. 7 and 8, the protective member 31 is attached to the back surface 19 side of the wafer 10.
The protection member 31 includes: a base material layer made of a stretchable synthetic resin; and a paste layer which is laminated on at least any one of the front surface and the rear surface of the base material layer and is composed of a synthetic resin having elasticity and adhesiveness. The outer peripheral edge of the protective member 31 is bonded to the back surface side of the ring frame 32. The ring frame 32 has an opening larger than the outer diameter of the wafer 10.
In the protective member attaching step ST3 of the first example, the wafer 10 is positioned at a predetermined position of the opening of the ring frame 32, and the back surface 19 of the wafer 10 is attached to the paste layer side of the protective member 31, whereby the wafer 10 is fixed to the protective member 31 and the ring frame 32. At this time, the protective member 31 is attached to the rear surface 19 and the inner wall surface of the annular reinforcing portion 21 and the bottom surface of the recess 20 so as to follow the shape of the recess 20 formed in the rear surface 19 of the wafer 10. In the protective member attaching step ST3 of the second example, the wafer 10 on which the annular reinforcing part 21 is formed, the protective member 31 attached to the front surface 12 of the wafer 10, and the annular frame 32 to which the outer periphery of the protective member 31 is attached constitute the frame unit 1.
Fig. 9 is a sectional view showing a second example of the frame unit 1-2 after the protective member attaching step ST3 shown in fig. 3. In a second example protective member attaching step ST3 shown in fig. 9, the protective member 31 is attached to the front surface 12 side of the wafer 10.
In the protective member sticking step ST3 of the second example, the wafer 10 is positioned at a predetermined position of the opening of the ring frame 32, and the front surface 12 of the wafer 10 is stuck to the front surface side of the protective member 31, whereby the wafer 10 is fixed to the protective member 31 and the ring frame 32. In the protective member attaching step ST3 of the second example, the wafer 10 on which the annular reinforcing part 21 is formed, the protective member 31 attached to the front surface 12 of the wafer 10, and the annular frame 32 to which the outer periphery of the protective member 31 is attached constitute a frame unit 1-2.
Next, the annular reinforced part removing step ST4 will be described. The annular reinforcing part removing step ST4 is a step of removing the annular reinforcing part 21 of the wafer 10 after the protective member attaching step ST3 is performed. As described above, the annular reinforced part removing step ST4 includes the annular reinforced part separating step ST41 and the removing step ST 42.
First, the annular reinforced part separating step ST41 of the embodiment will be described. The ring-shaped reinforced part separating step ST41 is a step of separating the device region 15 from the ring-shaped reinforced part 21 by dividing the wafer 10 along the outer periphery of the device region 15. In the following description, the first, second, third, and fourth examples of the annular reinforced part separating step ST41 will be described.
Fig. 10 is a side view partially in cross section showing a first example of the annular reinforced part separating step ST41 shown in fig. 4. The annular reinforcing part separating step ST41 of the first example shown in fig. 10 is performed after the protective member attaching step ST3 of the first example. That is, the annular reinforcing part separating step ST41 of the first example is performed in a state where the protective member 31 is attached to the back surface 19 side of the wafer 10.
In the annular reinforcing part separating step ST41 of the first example, the device region 15 is separated from the annular reinforcing part 21 by the cutting unit 50. The cutting unit 50 has a disk-shaped cutting tool 51 and a spindle 52 as a rotation shaft of the cutting tool 51. The cutting edge thickness of the cutting insert 51 is, for example, 0.03mm to 0.3 mm. The cutting tool 51 and the spindle 52 have a rotation axis parallel to a holding surface 56 of a chuck table 55 that holds a wafer 10 to be cut. The cutting tool 51 is attached to the tip of the spindle 52.
In the first example annular reinforcing part separating step ST41, first, as shown in fig. 10, the back surface 19 side of the wafer 10 is sucked and held on the holding surface 56 of the chuck table 55 via the protective member 31. In the first example, the chuck table 55 is fitted into the recess 20 of the wafer 10. At this time, the bottom surface of the recess 20 of the wafer 10 is fixed to the holding surface 56 of the chuck table 55 by fixing the ring frame 32 to a position below the back surface 19 of the wafer 10 using a not-shown clamp or the like.
In the first example of the annular reinforced portion separating step ST41, the cutting unit 50 is aligned with the wafer 10. Specifically, the machining point of the cutting tool 51 is positioned above the boundary between the outermost device 14 and the annular reinforcing portion 21, which is slightly inside the boundary between the recess 20 and the annular reinforcing portion 21 of the wafer 10.
In the annular reinforcing part separating step ST41 of the first example, the cutting tool 51 is then rotated about the axis via the spindle 52. In the annular reinforced portion separating step ST41 of the first example, the spindle 52 is lowered while supplying the machining water to the front surface 12 of the wafer 10 and the cutting tool 51, the rotating cutting tool 51 is cut into the front surface 12 side of the wafer 10 to be rotated on the chuck table 55, and then the chuck table 55 is rotated around the axis. When the cutting tool 51 reaches the bottom surface of the recess 20 of the wafer 10, the device region 15 is separated from the annular reinforcing part 21, and an annular cutting groove is formed. Since the protective member 31 is bonded to the wafer 10, the separated device region 15 and the ring-shaped reinforcing portion 21 are supported by the protective member 31.
Fig. 11 is a side view showing a second example of the annular reinforcing portion separating step ST41 shown in fig. 4 in a partial cross section. The annular reinforcing part separating step ST41 of the second example shown in fig. 11 is performed after the protective member attaching step ST3 of the second example. That is, the ring-shaped reinforcing part separating step ST41 of the second example is performed in a state where the protective member 31 is attached to the front surface 12 side of the wafer 10.
In the annular reinforcing part separating step ST41 of the second example, the device region 15 and the annular reinforcing part 21 are separated by the cutting unit 50, as in the first example. In the ring-shaped reinforcing portion separating step ST41 of the second example, first, as shown in fig. 11, the front surface 12 side of the wafer 10 is sucked and held on the holding surface 56 of the chuck table 55 via the protective member 31. At this time, the front surface 12 of the wafer 10 is fixed to the holding surface 56 of the chuck table 55 by fixing the ring frame 32 to a position below the front surface 12 of the wafer 10 using a not-shown clamp or the like.
In the ring-shaped reinforced portion separating step ST41 of the second example, the cutting unit 50 is aligned with the wafer 10. Specifically, the machining point of the cutting tool 51 is positioned above the boundary between the outermost device 14 and the annular reinforcing portion 21, which is slightly inside the boundary between the recess 20 and the annular reinforcing portion 21 of the wafer 10.
In the annular reinforcing part separating step ST41 of the second example, the cutting tool 51 is then rotated about the axis via the spindle 52. In the annular reinforced portion separating step ST41 of the second example, the spindle 52 is lowered while supplying the machining water to the back surface 19 of the wafer 10 and the cutting tool 51, the rotating cutting tool 51 is cut into the wafer 10 from the recess 20 side of the wafer to be rotated on the chuck table 55, and the chuck table 55 is rotated around the axis. When the cutting tool 51 reaches the front surface 12 of the wafer 10, the device region 15 is separated from the annular reinforcing portion 21, and an annular cutting groove is formed. Since the protective member 31 is bonded to the wafer 10, the separated device region 15 and the ring-shaped reinforcing portion 21 are supported by the protective member 31.
Fig. 12 is a side view showing a third example of the annular reinforcing part separating step ST41 shown in fig. 4 in a partial cross section. The annular reinforcing part separating step ST41 of the third example shown in fig. 12 is performed after the protective member attaching step ST3 of the first example. That is, the annular reinforcing part separating step ST41 of the first example is performed in a state where the protective member 31 is attached to the back surface 19 side of the wafer 10.
In the annular reinforced part separating step ST41 of the third example, the device region 15 is separated from the annular reinforced part 21 by the laser beam irradiation unit 60. The laser beam irradiation unit 60 is a unit that irradiates a laser beam 61 having a wavelength that is absorptive to the wafer 10 held on the chuck table 65. The laser beam irradiation unit 60 includes, for example, a laser beam oscillator, a mirror, and a condensing lens. The laser beam oscillator oscillates a laser beam 61 for processing the wafer 10. The mirror reflects the laser beam 61 oscillated by the laser beam oscillator toward the wafer 10 held on the holding surface 66 of the chuck table 65. The condensing lens condenses the laser light 61 reflected by the mirror to the wafer 10.
In the ring-shaped reinforcing portion separating step ST41 of the third example, first, as shown in fig. 12, the back surface 19 side of the wafer 10 is sucked and held on the holding surface 66 of the chuck table 65 via the protective member 31. In the third example, the chuck table 65 is fitted in the recess 20 of the wafer 10. At this time, the bottom surface of the recess 20 of the wafer 10 is fixed to the holding surface 66 of the chuck table 65 by fixing the ring frame 32 to a position below the back surface 19 of the wafer 10 using a clamp, not shown, or the like.
In the ring-shaped reinforced portion separating step ST41 of the third example, the laser beam irradiation unit 60 is aligned with the wafer 10. Specifically, the converging point of the laser beam 61 is positioned above the boundary between the outermost device 14 and the annular reinforcing portion 21, which is slightly inside the boundary between the recess 20 and the annular reinforcing portion 21 of the wafer 10.
In the third example of the ring-shaped reinforcing portion separating step ST41, the converging point of the laser beam 61 is set on the upper surface or inside of the wafer 10 while the chuck table 65 is rotated around the axis, and ablation processing is performed, thereby forming a ring-shaped laser processing groove in the wafer 10. Thereby, the device region 15 and the annular reinforcing portion 21 are separated. Since the protective member 31 is bonded to the wafer 10, the separated device region 15 and the ring-shaped reinforcing portion 21 are supported by the protective member 31.
Fig. 13 is a side view showing a fourth example of the annular reinforcing part separating step ST41 shown in fig. 4 in a partial cross section. The ring-shaped reinforcing portion separating step ST41 of the fourth example shown in fig. 13 is performed after the protective member attaching step ST3 of the second example. That is, the ring-shaped reinforcing part separating step ST41 of the fourth example is performed in a state where the protective member 31 is attached to the front surface 12 side of the wafer 10.
In the annular reinforced part separating step ST41 of the fourth example, the device region 15 and the annular reinforced part 21 are separated from each other by the laser beam irradiation unit 60, as in the third example. In the ring-shaped reinforcing portion separating step ST41 of the fourth example, first, as shown in fig. 13, the front surface 12 side of the wafer 10 is sucked and held on the holding surface 66 of the chuck table 65 via the protective member 31. At this time, the front surface 12 of the wafer 10 is fixed to the holding surface 66 of the chuck table 65 by fixing the ring frame 32 to a position below the front surface 12 of the wafer 10 using a clamp, not shown, or the like.
In the ring-shaped reinforced portion separating step ST41 of the fourth example, the laser beam irradiation unit 60 is aligned with the wafer 10. Specifically, the converging point of the laser beam 61 is positioned above the boundary between the outermost device 14 and the annular reinforcing portion 21, which is slightly inside the boundary between the recess 20 and the annular reinforcing portion 21 of the wafer 10.
In the ring-shaped reinforcing portion separating step ST41 of the fourth example, the wafer 10 is then ablated by setting the converging point of the laser beam 61 on the upper surface or inside of the wafer 10 while rotating the chuck table 65 around the axis, so that a ring-shaped laser-machined groove is formed in the wafer 10. Thereby, the device region 15 is separated from the annular reinforcing portion 21. Since the protective member 31 is bonded to the wafer 10, the separated device region 15 and the ring-shaped reinforcing portion 21 are supported by the protective member 31.
In the ring-shaped reinforced portion separating step ST41 of the third and fourth examples, the laser light ray 61 may also have a wavelength that is transmissive with respect to the wafer 10. In this case, in the ring-shaped reinforced part separating step ST41 of the third and fourth examples, the modified layer may be formed inside the wafer 10, and the device region 15 and the ring-shaped reinforced part 21 may be separated by the ring-shaped modified layer and the crack developed from the modified layer.
Next, the removal step ST42 of the embodiment will be described. The removing step ST42 is a step of removing the annular reinforcing part 21 by grinding while supplying processing water to the wafer 10 after the annular reinforcing part separating step ST41 is performed. In the following description, a first example, a second example, a third example, a fourth example, and a fifth example of the removal step ST42 will be described.
Fig. 14 is a side view partially in section showing a first example of the removal step ST42 shown in fig. 4. The removing step ST42 of the first example shown in fig. 14 is performed after the annular reinforcing portion separating step ST41 of the first example or the third example. That is, the removal step ST42 of the first example is performed in a state where the protective member 31 is attached to the back surface 19 side of the wafer 10.
In the first example removal step ST42, the annular reinforcing portion 21 separated from the device region 15 is ground and removed by the cutting unit 70. The cutting unit 70 has a disk-shaped cutting tool 71 and a spindle 72 as a rotation shaft of the cutting tool 71. The cutting edge of the cutting insert 71 has a thickness of, for example, 1mm to 5 mm. That is, the blade thickness of the cutting blade 71 used in the removing step ST42 of the first example is larger than the blade thickness of the cutting blade 51 of the cutting unit 50 used in the annular reinforcing portion separating step ST41 of the first example or the second example. The cutting tool 71 and the spindle 72 have a rotation axis parallel to a holding surface 76 of a chuck table 75 that holds a wafer 10 to be ground. Cutting tool 71 is attached to the tip of spindle 72. The cutting tool 71 has a grindstone on at least one surface or outer peripheral surface on the side to be ground.
In the first example removal step ST42, first, as shown in fig. 14, the back surface 19 side of the wafer 10 is sucked and held on the holding surface 76 of the chuck table 75 via the protective member 31. The method of holding the wafer 10 is the same as the ring-shaped reinforced portion separating step ST41 in the first or third example, and therefore, the description thereof is omitted. In addition, the chuck table 75 may be common to the chuck tables 55, 65 in the ring reinforcement portion separating step ST 41. That is, the removal step ST42 is preferably performed in a state where the wafer 10 after the device region 15 and the ring-shaped reinforcing portion 21 are separated is held on the chuck tables 55 and 65, but the present invention is not limited thereto.
In the first example removal step ST42, the cutting unit 70 is aligned with the wafer 10. Specifically, the grinding surface of the cutting blade 71 is positioned outside the annular reinforcing portion 21 of the wafer 10. In the removal step ST42 of the first example, the cutting tool 71 is then rotated about the axis via the spindle 72 while the chuck table 75 is rotated about the axis. In the removal step ST42 of the first example, the cutting tool 71 is moved closer to the axial center direction of the chuck table 75 while supplying the machining water to the annular reinforcing part 21 of the wafer 10 and the cutting tool 71, and the rotating cutting tool 71 is pressed against the outer peripheral edge of the wafer 10 rotating on the chuck table 75 to grind. Thus, in the removing step ST42 of the first example, the annular reinforcing part 21 is removed from the outer peripheral edge of the wafer 10 toward the center. At this time, the control device or the operator of the cutting unit 70 controls so that the cutting tool 71 does not contact the annular cutting groove, the laser-processed groove, or the modified layer formed in the annular reinforcing portion separating step ST 41. This suppresses the load generated in the removal step ST42 of the first example from progressing toward the device region 15 along the wafer 10. In the first example removal step ST42, the thickness of the annular reinforcing portion 21 may be ground once, or the height of the cutting tool 71 may be moved to perform grinding in multiple steps.
Fig. 15 is a side view showing a second example of the removing step ST42 shown in fig. 4 in a partial section. The removing step ST42 of the second example shown in fig. 15 is performed after the annular reinforcing portion separating step ST41 of the second or fourth example. That is, the removal step ST42 of the second example is performed in a state where the protective member 31 is attached to the front surface 12 side of the wafer 10.
In the removal step ST42 of the second example, the annular reinforcing portion 21 separated from the device region 15 is ground and removed by the cutting means 70, as in the first example. In the removal step ST42 of the second example, first, as shown in fig. 15, the front surface 12 side of the wafer 10 is sucked and held on the holding surface 76 of the chuck table 75 via the protective member 31. The method of holding the wafer 10 is the same as the ring-shaped reinforcing portion separating step ST41 of the second or fourth example, and therefore, the description thereof is omitted. The chuck table 75 may be common to the chuck tables 55 and 65 in the annular reinforcing portion separating step ST41, as in the first example. That is, the removal step ST42 is preferably performed in a state where the wafer 10 after the device region 15 and the ring-shaped reinforcing portion 21 are separated is held on the chuck tables 55 and 65, but the present invention is not limited thereto.
In the removal step ST42 of the second example, the annular reinforcing part 21 is ground and removed by aligning the cutting unit 70 with the wafer 10. The alignment method and the grinding method of the cutting unit 70 are the same as those of the first example, and therefore, the description thereof is omitted. That is, in the removing step ST42 of the second example, the annular reinforcing part 21 is removed from the outer peripheral edge of the wafer 10 toward the center in a state where any one of the front surface 12 side and the back surface 19 side of the wafer 10 is held on the holding surface 76 of the chuck table 75. At this time, the control device or the operator of the cutting unit 70 controls so that the cutting blade 71 does not come into contact with the annular cutting groove, the laser-machined groove, or the modified layer formed in the annular reinforcing portion separating step ST 41. Thereby, the load generated in the removal step ST42 of the second example is suppressed from progressing toward the device region 15 along the wafer 10. In the first example removal step ST42, the thickness of the annular reinforcing portion 21 may be ground once, or the height of the cutting tool 71 may be moved to perform grinding in multiple steps.
Fig. 16 is a side view showing a third example of the removing step ST42 shown in fig. 4 in partial section. The removing step ST42 of the third example shown in fig. 16 is performed after the annular reinforcing portion separating step ST41 of the first example or the third example. That is, the removal step ST42 of the third example is performed in a state where the protective member 31 is attached to the back surface 19 side of the wafer 10.
In the removal step ST42 of the third example, the annular reinforcing portion 21 separated from the device region 15 is ground and removed by the two cutting units 70. In the third example, the two cutting units 70 are disposed such that the grinding surfaces of the cutting tool 71 face each other. The two cutting units 70 simultaneously grind the outer peripheral edge of the wafer 10 from opposite sides.
In the removing step ST42 of the third example, first, similarly to the first example, the back surface 19 side of the wafer 10 is sucked and held on the holding surface 76 of the chuck table 75 via the protective member 31. In the third example, in the removal step ST42, the annular reinforcing part 21 is ground and removed by aligning the cutting unit 70 with the wafer 10. The alignment method and the grinding method of each cutting unit 70 are the same as those of the first example, and therefore, the description thereof is omitted. In the removal step ST42 of the second example shown in fig. 15, the removal of the annular reinforcing portion 21 may be performed by two cutting units 70 arranged such that the grinding surfaces of the cutting blades 71 face each other.
In the removing step ST42 of the first, second, and third examples shown in fig. 14, 15, and 16, the cutting tool 71 is caused to cut into the wafer 10 from the outer peripheral side toward the center thereof while the chuck table 75 is rotated, but the method of removing the annular reinforcing part 21 by the cutting tool 71 is not limited to this. In the removing step ST42 of the first, second, and third examples, the cutting tool 71 may be cut into the annular reinforcing part 21 from the front surface side and then the chuck table 75 may be rotated, similarly to the annular reinforcing part separating step ST41 of the first and second examples. In this case, the removal may be performed in multiple divisions from the outer peripheral side toward the center of the wafer 10. In any removal method using the cutting tool 71, the rotation speed of the chuck table 75 and the moving speed of the cutting tool 71 are selected as appropriate conditions.
Fig. 17 is a side view showing a fourth example of the removing step ST42 shown in fig. 4 in a partial cross section. The removing step ST42 of the fourth example shown in fig. 17 is performed after the annular reinforcing portion separating step ST41 of the first example or the third example. That is, the removing step ST42 of the fourth example is performed in a state where the protective member 31 is attached to the back surface 19 side of the wafer 10.
In the removal step ST42 of the fourth example, the annular reinforcing portion 21 separated from the device region 15 is ground and removed by the grinding unit 40. The grinding unit 40 may be the same as or different from the grinding unit 40 used in the back grinding step ST 2. In the grinding unit 40 used in the removal step ST42 of the fourth example, at least the spindle 41 and the grinding wheel 42 attached to the lower end of the spindle 41 have a rotation axis perpendicular to the holding surface 46 of the chuck table 45 holding the wafer 10 to be ground (or parallel to the axial center of the chuck table 45).
In the removing step ST42 of the fourth example, first, as shown in fig. 17, the back surface 19 side of the wafer 10 is sucked and held on the holding surface 46 of the chuck table 45 via the protective member 31. The method of holding the wafer 10 is the same as the removal step ST42 in the first or third example, and therefore, the description thereof is omitted.
In the removing step ST42 of the fourth example, the grinding unit 40 is then aligned with the wafer 10. Specifically, the grinder 43 attached to the lower surface of the grinding wheel 42 is positioned above the front surface 12 of the annular reinforcing portion 21 of the wafer 10. At this time, the outer peripheral edge of the grinder 43 is positioned so as not to enter above the device region 15. In the removing step ST42 of the fourth example, next, the grinding wheel 42 is rotated around the axis via the spindle 41 while the chuck table 45 is rotated around the axis. In the removing step ST42 of the fourth example, the grinding wheel 42 is lowered while supplying the processing water to the annular reinforcing part 21 of the wafer 10 and the grindstone 43, and the rotating grindstone 43 is brought into contact with the front surface 12 side of the annular reinforcing part 21 of the wafer 10 rotating on the chuck table 75. Thus, in the removing step ST42 of the fourth example, the annular reinforcing portion 21 is ground and removed from the front surface 12 side to the rear surface 19 side. At this time, the control device or the operator of the grinding unit 40 controls so that the grindstone 43 does not come into contact with the annular cut groove, the laser-processed groove, or the modified layer formed in the annular reinforcing portion separating step ST 41. Thereby, the load generated in the removal step ST42 of the fourth example is suppressed from progressing toward the device region 15 along the wafer 10. In the removing step ST42 of the fourth example, the width of the annular reinforcing part 21 may be ground once, or grinding may be performed in multiple times by moving the distance between the grindstone 43 and the axial center of the chuck table 45.
Fig. 18 is a side view showing a fifth example of the removing step ST42 shown in fig. 4 in a partial section. The removing step ST42 of the fifth example shown in fig. 18 is performed after the annular reinforcing portion separating step ST41 of the second or fourth example. That is, the removing step ST42 of the fifth example is performed in a state where the protective member 31 is attached to the front surface 12 side of the wafer 10.
In the removing step ST42 of the fifth example, the annular reinforcing part 21 separated from the device region 15 is ground and removed by the grinding unit 40, as in the fourth example. In the removal step ST42 of the second example, first, as shown in fig. 18, the front surface 12 side of the wafer 10 is sucked and held on the holding surface 46 of the chuck table 45 via the protective member 31. The method of holding the wafer 10 is the same as the removal step ST42 of the second example, and therefore, the description thereof is omitted.
In the removal step ST42 of the fifth example, the grinding unit 40 is then aligned with the wafer 10. Specifically, the grindstone 43 attached to the lower surface of the grinding wheel 42 is positioned above the back surface 19 of the annular reinforcing portion 21 of the wafer 10. At this time, the outer peripheral edge of the grinder 43 is positioned so as not to enter above the device region 15. In the removing step ST42 of the fifth example, the grinding wheel 42 is then rotated about the axis via the spindle 41 while the chuck table 45 is rotated about the axis. In the removing step ST42 of the fifth example, the grinding wheel 42 is lowered while supplying the processing water to the annular reinforcing part 21 of the wafer 10 and the grindstone 43, and the rotating grindstone 43 is brought into contact with the back surface 19 side of the annular reinforcing part 21 of the wafer 10 rotating on the chuck table 75. Thus, in the removing step ST42 of the fifth example, the annular reinforcing portion 21 is ground from the back surface 19 side toward the front surface 12 side, and the thickness of the annular reinforcing portion 21 is removed to the same thickness as that of the device 15 region or completely removed. At this time, the control device or the operator of the grinding unit 40 controls so that the grindstone 43 does not come into contact with the annular cut groove, the laser-processed groove, or the modified layer formed in the annular reinforcing portion separating step ST 41. Thereby, the load generated in the removal step ST42 of the fifth example is suppressed from progressing toward the device region 15 along the wafer 10. In the removing step ST42 of the fifth example, the width of the annular reinforcing part 21 may be ground once, or grinding may be performed in multiple times by moving the distance between the grindstone 43 and the axial center of the chuck table 45.
The removal step ST42 of the first and fourth examples shown in fig. 14 and 17 is performed in a state where the protective member 31 is attached to the back surface 19 side of the wafer 10 and the front surface 12 of the wafer 10 is the upper surface. In this case, there are the following advantages: after the annular reinforcing part 21 is removed, the wafer can be divided into the chips 18 by dicing or the like without changing the orientation of the wafer 10 without changing the protective member 31.
In contrast, the removal step ST42 of the second and fifth examples shown in fig. 15 and 18 is performed in a state where the protective member 31 is attached to the front surface 12 side of the wafer 10 and the back surface 19 of the wafer 10 is the upper surface. In this case, there are the following advantages: since the holding by the chuck tables 75 and 45 is facilitated and the protective member 31 is attached to the front surface 12 side on which the device 14 is formed, the adhesion of processing chips and the like generated in the removing step ST42 to the surface of the device 14 can be suppressed.
As described above, in the method of processing the wafer 10 according to the embodiment, after the region corresponding to the device region 15 and the annular reinforcing portion 21 are separated, the separated annular reinforcing portion 21 is removed by grinding. Since the separated annular reinforcing portion 21 is removed by grinding, it is not necessary to perform a difficult step of removing the annular reinforcing portion 21 from the protective member 31 and conveying the same, which requires a detailed work. This can prevent the device 14 from being damaged due to the removal of the annular reinforcing portion 21 or the time taken for the removal. Further, since the annular reinforcing portion 21 is ground after being separated from the device region 15, the load during grinding is not transmitted to the device region 15. This can suppress the occurrence of chipping and cracking in the device region 15 due to a load during grinding.
The present invention is not limited to the above embodiments. That is, various modifications can be made and implemented without departing from the scope of the present invention.

Claims (5)

1. A method of processing a wafer having on a front side: a device region in which devices are formed in a plurality of regions partitioned by a plurality of intersecting streets; and an outer periphery surplus region surrounding the device region, the wafer having a circular recess formed by grinding on a back surface side of the wafer corresponding to the device region, and having an annular reinforcing portion along an outer periphery of the circular recess, wherein,
the processing method of the wafer comprises the following steps:
a protective member attaching step of attaching a protective member having an area covering the front surface or the back surface of the wafer to the wafer; and
a ring-shaped reinforcing portion removing step of removing the ring-shaped reinforcing portion of the wafer after the protective member attaching step is performed,
the annular reinforcing part removing step comprises the following steps:
a ring-shaped reinforcing portion separating step of separating the device region from the ring-shaped reinforcing portion by dividing the wafer along the outer periphery of the device region; and
and a removing step of removing the annular reinforcing part by using a grinder while supplying processing water to the wafer after the annular reinforcing part separating step is performed.
2. The method of processing a wafer according to claim 1,
in the removing step, the annular reinforcing portion is removed by grinding using a grinding wheel attached to a lower end of a spindle having a rotation axis perpendicular to a holding surface of a chuck table holding the wafer.
3. The method of processing a wafer according to claim 1,
in the removing step, the annular reinforcing portion is cut and removed by using a cutting tool attached to a tip of a spindle having a rotation axis parallel to a holding surface of a chuck table holding the wafer.
4. The method of processing a wafer according to any one of claims 1 to 3,
the annular reinforcing portion separating step is performed using a cutting tool or a laser beam.
5. The method of processing a wafer according to any one of claims 1 to 4,
in the protective member attaching step, the outer peripheral edge of the protective member covering the front or back surface of the wafer is attached to the ring frame, and a frame unit in which the wafer is attached to the protective member in the opening of the ring frame is formed.
CN202011415839.3A 2020-12-07 2020-12-07 Method for processing wafer Pending CN114613726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011415839.3A CN114613726A (en) 2020-12-07 2020-12-07 Method for processing wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011415839.3A CN114613726A (en) 2020-12-07 2020-12-07 Method for processing wafer

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Publication Number Publication Date
CN114613726A true CN114613726A (en) 2022-06-10

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